CN106952966B - 氮化镓肖特基二极管及其制作方法 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 18
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- 238000000034 method Methods 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
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- 230000007547 defect Effects 0.000 description 1
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Abstract
本发明涉及一种氮化镓肖特基二极管,包括衬底、N+氮化镓层、N‑氮化镓层台面、蚀刻有凹槽的P型氮化镓层,P型氮化镓层上形成有作为阳极的肖特基金属层,N+氮化镓层上形成有作为阴极的欧姆金属层。其制作方法包括在衬底上表面依次生长N+氮化镓层、N‑氮化镓层、P型氮化镓层;形成具有P型氮化镓层和N‑氮化镓层的台面,部分蚀刻每个台面上的P型氮化镓层形成一系列凹槽;P型氮化镓层上沉淀肖特基金属层作为阳极,N+氮化镓层上沉淀欧姆金属层作为阴极。本发明可以耗尽肖特基电极下的载流子,提升肖特基势垒高度,降低漏电流,增高击穿电压,肖特基电极下的凹槽可以降低正向导通电压,使得器件的正向和反向特性同时得到提升。
Description
技术领域
本发明涉及半导体领域,特别是涉及一种氮化镓肖特基二极管结构及其制作方法。
背景技术
现有技术中,氮化镓肖特基二极管的结构如图1所示:在蓝宝石、硅或碳化硅衬底1上生长N+氮化镓层2和N-氮化镓层3,蚀刻N-氮化镓层3至N+氮化镓层2,在N-氮化镓层3上淀积肖特基金属层5作为阳极,在N+氮化镓层2上淀积欧姆金属层6作为阴极,从而构成肖特基二极管。
现有氮化镓肖特基二极管结构的缺点在于:由于本征氮化镓为N型,而通过在生长过程中的掺杂来降低N型氮化镓层中的电子浓度有限,因此无法有效提升肖特基势垒高度而达到降低漏电流和增高击穿电压的目的。
发明内容
本发明的一个目的是提供一种氮化镓肖特基二极管。
为达到上述目的,本发明采用的技术方案是:
一种氮化镓肖特基二极管,包括衬底、形成在所述的衬底上的N+氮化镓层、形成在所述的N+氮化镓层上具有N-氮化镓层的台面、形成在所述的N-氮化镓层的台面上蚀刻有凹槽的P型氮化镓层,所述的P型氮化镓层上形成有肖特基金属层,所述的N+氮化镓层上形成有欧姆金属层,所述的肖特基金属层形成二极管的阳极,所述的欧姆金属层形成二极管的阴极。
优选地,所述的凹槽底部至所述的N-氮化镓层的距离为0~50nm。
优选地,所述的P型氮化镓层的厚度为3nm~3um。
优选地,所述的P型氮化镓层上具有多个凹槽。
本发明的另一个目的是提供一种氮化镓肖特基二极管的制作方法。
为达到上述目的,本发明采用的技术方案是:
一种氮化镓肖特基二极管的制作方法,包括在衬底上表面生长N+氮化镓层,在N+氮化镓层上表面生长N-氮化镓层,还包括在N-氮化镓层上表面生长P型氮化镓层;进行蚀刻工艺:形成具有P型氮化镓层和N-氮化镓层的台面,并且蚀刻每个台面上的部分P型氮化镓层形成凹槽;在P型氮化镓层上沉淀肖特基金属层作为阳极,在N+氮化镓层上沉淀欧姆金属层作为阴极。
优选地,进行蚀刻工艺时:先蚀刻部分P型氮化镓层形成凹槽,再蚀刻P型氮化镓层和N-氮化镓层至N+氮化镓层形成台面。
优选地,进行蚀刻工艺时:先蚀刻P型氮化镓层和N-氮化镓层至N+氮化镓层形成台面,再蚀刻台面上部分P型氮化镓层形成凹槽。
进一步优选地,蚀刻P型氮化镓层至距离N-氮化镓层0~50nm。
优选地,所述的P型氮化镓层的生长厚度为3nm~3um。
优选地,所述的衬底为蓝宝石、硅或者碳化硅衬底。
由于上述技术方案运用,本发明与现有技术相比具有下列优点和效果:
本发明的结构可以耗尽肖特基电极下的载流子,从而提升肖特基势垒高度,降低漏电流,增高击穿电压,而肖特基电极下的凹槽结构可以降低正向导通电压,因此使得器件的正向和反向特性同时得到提升。
附图说明
附图1为现有技术中氮化镓肖特基二极管结构横截面示意图;
附图2为本实施例中步骤(一)的示意图;
附图3为本实施例中步骤(二)的示意图一;
附图4为本实施例中步骤(二)的示意图二;
附图5为本实施例的横截面示意图。
其中:1、衬底;2、N+氮化镓层;3、N-氮化镓层;4、P型氮化镓层;40、凹槽;5、肖特基金属层;6、欧姆金属层。
具体实施方式
下面结合附图和实施案例对本发明作进一步描述:
如图5所示:一种氮化镓肖特基二极管,包括衬底1、形成在衬底1上的N+氮化镓层2、形成在N+氮化镓层2上具有N-氮化镓层3的台面、形成在N-氮化镓层3的台面上蚀刻有凹槽40的P型氮化镓层4,P型氮化镓层4上形成有肖特基金属层5,N+氮化镓层2上形成有欧姆金属层6,肖特基金属层5形成二极管的阳极,欧姆金属层6形成二极管的阴极。
以下具体阐述下本实施氮化镓肖特基二极管的制作方法,包括以下步骤:
(一)、在蓝宝石、硅或者碳化硅的衬底1上生长N+氮化镓层2,在N+氮化镓层2上表面生长N-氮化镓层3,在N-氮化镓层3上表面生长3nm~3um 的P型氮化镓层4,如图2所示;
(二)、干法蚀刻P型氮化镓层4至距离N-氮化镓层30~50nm,形成凹槽40,蚀刻多个凹槽40,如图3所示;对P型氮化镓层4和N-氮化镓层3进行干法蚀刻形成台面,并确保每个台面上的P型氮化镓层4上均具有凹槽40,如图4所示;
或者对P型氮化镓层4和N-氮化镓层3进行干法蚀刻形成台面,干法蚀刻台面上的P型氮化镓层4至距离N-氮化镓层30~50nm,形成凹槽40,蚀刻多个凹槽40,凹槽间距宽度0.1um~10um;
(三)、在P型氮化镓层4上沉淀肖特基金属层5作为阳极,在N+氮化镓层3上沉淀欧姆金属层6作为阴极,制成氮化镓肖特基二极管,如图5所示。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。
Claims (8)
1.一种氮化镓肖特基二极管,其特征在于:包括衬底、形成在所述的衬底上的N+氮化镓层、形成在所述的N+氮化镓层上具有N-氮化镓层的台面、形成在所述的N-氮化镓层的台面上的P型氮化镓层,通过蚀刻部分所述的P型氮化镓层形成多个凹槽,所述的P型氮化镓层上形成有肖特基金属层,所述的N+氮化镓层上形成有欧姆金属层,所述的肖特基金属层形成二极管的阳极,所述的欧姆金属层形成二极管的阴极。
2.根据权利要求1所述的一种氮化镓肖特基二极管,其特征在于:所述的凹槽底部至所述的N-氮化镓层的距离为30~50nm。
3.根据权利要求1所述的一种氮化镓肖特基二极管,其特征在于:所述的P型氮化镓层的厚度为3nm~3um。
4.一种氮化镓肖特基二极管的制作方法,包括在衬底上表面生长N+氮化镓层,在N+氮化镓层上表面生长N-氮化镓层,其特征在于:还包括在N-氮化镓层上表面生长P型氮化镓层;进行蚀刻工艺:形成具有P型氮化镓层和N-氮化镓层的台面,并且蚀刻每个台面上的部分P型氮化镓层形成多个凹槽;在P型氮化镓层上沉淀肖特基金属层作为阳极,在N+氮化镓层上沉淀欧姆金属层作为阴极。
5.一种氮化镓肖特基二极管的制作方法,包括在衬底上表面生长N+氮化镓层,在N+氮化镓层上表面生长N-氮化镓层,其特征在于:还包括在N-氮化镓层上表面生长P型氮化镓层;进行蚀刻工艺:先蚀刻部分P型氮化镓层形成多个凹槽,再蚀刻P型氮化镓层和N-氮化镓层至N+氮化镓层形成台面,并确保每个台面上的P型氮化镓层上均具有多个凹槽;在P型氮化镓层上沉淀肖特基金属层作为阳极,在N+氮化镓层上沉淀欧姆金属层作为阴极。
6.根据权利要求4或5所述的氮化镓肖特基二极管的制作方法,其特征在于:蚀刻P型氮化镓层至距离N-氮化镓层30~50nm。
7.根据权利要求4或5所述的氮化镓肖特基二极管的制作方法,其特征在于:所述的P型氮化镓层的生长厚度为3nm~3um。
8.根据权利要求4或5所述的氮化镓肖特基二极管的制作方法,其特征在于:所述的衬底为蓝宝石、硅或者碳化硅衬底。
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