CN106940503B - Display device - Google Patents

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Publication number
CN106940503B
CN106940503B CN201710004406.0A CN201710004406A CN106940503B CN 106940503 B CN106940503 B CN 106940503B CN 201710004406 A CN201710004406 A CN 201710004406A CN 106940503 B CN106940503 B CN 106940503B
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section
integrated value
semiconductor layer
luminance integrated
brightness
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CN106940503A (en
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崔博钦
朱夏青
孙铭谦
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Innolux Corp
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Innolux Corp
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136277Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line

Abstract

The present invention provides a display device including: a substrate; a semiconductor layer on the substrate; the second electrode layer is positioned above the semiconductor layer and comprises a first data line extending along a second direction; and a plurality of pixel regions arranged between two adjacent first data lines; wherein a pixel region has a first section and a second section substantially parallel to the second direction, and the first section overlaps the semiconductor layer and the second section does not overlap the semiconductor layer; when a light ray passes through the display device, a first luminance integral value can be obtained by measuring the first section, a second luminance integral value can be obtained by measuring the second section, and the ratio of the first luminance integral value to the second luminance integral value is larger than 0.4 and smaller than 1.

Description

Display device
Technical Field
The present invention relates to a display device, and more particularly, to a display device capable of improving transmittance or contrast.
Background
With the continuous progress of display technology, all display panels are developed to be small, thin and light, so that the mainstream display devices in the market are developed into thin displays such as liquid crystal display panels, organic light emitting diode display panels or inorganic light emitting diode display panels from the conventional cathode ray tubes. Among them, the thin display can be applied to a large number of fields, such as display panels used in daily life, for example, mobile phones, notebook computers, video cameras, music players, mobile navigation devices, and televisions, and most of them are used.
Among them, the technology of the liquid crystal display panel is rather mature and is one of the common display panels in the market; however, as the display panel is developed, the display quality of the display panel is required to be improved by consumers, so that the manufacturers are not able to develop the display panel with higher display quality.
In the development of liquid crystal display panels, as the generation of high resolution display panels comes, the transmittance and contrast of the panels are one of the important factors related to the display quality of the display panels. Therefore, the transmittance and contrast of the display panel are not improved actively by each manufacturer, and the display quality can be improved.
In view of the above, there is a need to develop a display device that can improve the transmittance or contrast ratio to meet the current requirement for high display quality.
Disclosure of Invention
The present invention is directed to a display device, in which the light transmittance of an active layer region is adjusted to improve the transmittance or contrast of the display device, so as to improve the display quality of the display device.
In one embodiment of the present invention, a display device includes: a substrate; a semiconductor layer on the substrate; a first insulating layer on the semiconductor layer; a first electrode layer on the first insulating layer, the first electrode layer including a plurality of first gate lines extending in a first direction; a second insulating layer on the first electrode layer; a second electrode layer on the second insulating layer, the second electrode layer including a plurality of first data lines extending in a second direction, the first direction being different from the second direction; a plurality of pixel regions defined by the first gate lines and the first data lines; wherein, a first virtual line and a second virtual line are defined in one of the pixel regions, and the first virtual line and the second virtual line are respectively substantially parallel to the second direction; wherein, the first dummy line is defined to have a first section overlapping with the semiconductor layer, the second dummy line is defined to have a second section not overlapping with the semiconductor layer, the first section and the second section have a same distance with the first gate line, respectively, and the length of the first section is equal to that of the second section; when a light ray passes through the display device, the first section corresponds to a first section brightness, the second section corresponds to a second section brightness, the first section brightness has a first brightness integral value, the second section brightness has a second brightness integral value, and the ratio of the first brightness integral value to the second brightness integral value is greater than 0.4 and less than 1.
A display device of another embodiment of the present invention includes: a substrate; a semiconductor layer on the substrate; a first insulating layer on the semiconductor layer; a first electrode layer on the first insulating layer, the first electrode layer including a plurality of first gate lines extending in a first direction; a second insulating layer on the first electrode layer; a second electrode layer on the second insulating layer, the second electrode layer including a plurality of first data lines extending in a second direction, the first direction being different from the second direction; and a plurality of pixel regions defined by the first gate lines and the first data lines; wherein, a pixel region is defined therein, the pixel region has a first segment and a second segment, the first segment is substantially parallel to the second direction and overlapped with the semiconductor layer, the second segment is substantially parallel to the second direction and not overlapped with the semiconductor layer, the first segment and the second segment have a same distance with the first gate line, respectively, and the length of the first segment is equal to that of the second segment; when a light ray passes through the display device, the first section corresponds to a first section brightness, the second section corresponds to a second section brightness, the first section brightness has a first brightness integral value, the second section brightness has a second brightness integral value, and the ratio of the first brightness integral value to the second brightness integral value is greater than 0.4 and less than 1.
A display device of a further embodiment of the present invention includes: a substrate; a shading pattern layer located on the substrate; a semiconductor layer on the light-shielding pattern layer and partially overlapped with the light-shielding pattern layer; a first insulating layer on the semiconductor layer; a first electrode layer on the first insulating layer, the first electrode layer including a plurality of first gate lines extending in a first direction; a second insulating layer on the first electrode layer; a second electrode layer on the second insulating layer, the second electrode layer including a plurality of first data lines extending in a second direction, the first direction being different from the second direction; a plurality of pixel regions defined by the first gate lines and the first data lines; wherein, a first virtual line and a second virtual line are defined in one of the pixel regions, and the first virtual line and the second virtual line are respectively substantially parallel to the second direction; wherein, the first dummy line is defined to have a first section overlapping with the semiconductor layer and not overlapping with the light-shielding pattern layer, and the second dummy line is defined to have a second section not overlapping with the semiconductor layer and not overlapping with the light-shielding pattern layer, the first section and the second section have a same distance with the first gate line respectively, and the length of the first section is equal to the length of the second section; when a light ray passes through the display device, the first section corresponds to a first section brightness, the second section corresponds to a second section brightness, the first section brightness has a first brightness integral value, the second section brightness has a second brightness integral value, and the ratio of the first brightness integral value to the second brightness integral value is greater than 0.4 and less than 1.
A display device of a further embodiment of the present invention includes: a substrate; a shading pattern layer located on the substrate; a semiconductor layer on the light-shielding pattern layer and partially overlapped with the light-shielding pattern layer; a first insulating layer on the semiconductor layer; a first electrode layer on the first insulating layer, the first electrode layer including a plurality of first gate lines extending in a first direction; a second insulating layer on the first electrode layer; a second electrode layer on the second insulating layer, the second electrode layer including a plurality of first data lines extending in a second direction, the first direction being different from the second direction; and a plurality of pixel regions defined by the first gate lines and the first data lines; wherein, a pixel area is defined in which a first section and a second section are provided, the first section is substantially parallel to the second direction and overlapped with the semiconductor layer without overlapping with the light shielding pattern layer, the second section is substantially parallel to the second direction and not overlapped with the semiconductor layer without overlapping with the light shielding pattern layer, the first section and the second section have a same distance with the first gate line respectively, and the length of the first section is equal to the length of the second section; when a light ray passes through the display device, the first section corresponds to a first section brightness, the second section corresponds to a second section brightness, the first section brightness has a first brightness integral value, the second section brightness has a second brightness integral value, and the ratio of the first brightness integral value to the second brightness integral value is greater than 0.4 and less than 1.
In the display device of the present invention, the first section overlapping the semiconductor layer has a first luminance integrated value, and the second section not overlapping the semiconductor layer has a second luminance integrated value, and by making the first luminance integrated value smaller than the second luminance integrated value, particularly, the ratio of the first luminance integrated value to the second luminance integrated value is greater than 0.4 and less than 1, so that the front view transmittance can be improved within a tolerable range of contrast reduction, and the display quality of the display device can be improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a display device according to an embodiment 1 of the invention.
Fig. 2 is a top view of an element on a substrate of a display device according to embodiment 1 of the invention.
Fig. 3 is a top view of an element on a substrate of a display device according to embodiment 1 of the invention.
Fig. 4 is a top view of a black matrix layer on a substrate and a counter substrate of a display device according to embodiment 1 of the present invention.
Fig. 5 is a top view of the elements on the substrate of the display device according to embodiment 2 of the invention.
Fig. 6 is a top view of the elements on the substrate of the display device according to embodiment 2 of the invention.
Fig. 7 is a top view of a black matrix layer on a substrate and a counter substrate of a display device according to embodiment 2 of the invention.
Fig. 8 is a top view of the elements on the substrate of the display device according to embodiment 3 of the invention.
Fig. 9 is a top view of the elements on the substrate of the display device according to embodiment 3 of the invention.
Fig. 10 is a top view of a black matrix layer on a substrate and a counter substrate of a display device according to embodiment 3 of the invention.
Fig. 11 is a graph showing the luminance measurement results of test example 1.
Fig. 12 is a graph showing the luminance measurement results of test example 2.
Fig. 13A to 13C are graphs showing the luminance measurement results of test example 3, respectively.
Fig. 14A to 14C are graphs showing the luminance measurement results of test example 4, respectively.
Fig. 15A to 15C are graphs showing the results of luminance measurement of test example 5, respectively.
Fig. 16 is a graph comparing ratios of the first luminance integrated value and the second luminance integrated value of test examples 3 to 5.
Fig. 17 is a graph of transparency of the semiconductor layer in different color pixel regions versus white point position.
Description of reference numerals:
1 substrate 11 semiconductor layer
111, 112 semiconductor layer edge 121 light shielding edge
12 light-shielding pattern layer 13 first gate line
141 first data line 143 electrode pad
15 pixel electrode 151 slit
2 opening to the side substrate 21
3 display layer 4 backlight module
D1, D2, D3 distance P pixel area
P1, P2, P1 ', P2' point S1 first segment
S2 second section X first direction
Y second direction
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Furthermore, the use of ordinal numbers such as "first," "second," etc., in the specification and claims to modify a claim element does not by itself connote any preceding ordinal number of the claim element, nor does it denote the order of a given claim element from another claim element or method of manufacture, but are used merely to distinguish one claim element having a certain name from another element having a same name.
Example 1
Fig. 1 is a schematic cross-sectional view of a display device of the present embodiment. Wherein, the display device of this embodiment includes: a substrate 1; a pair of side substrates 2 disposed opposite to the substrates 1; and a display layer 3, locate between opposite side base plate 2 and base plate 1; and a backlight module 4 disposed below the substrate 1 of the display device. In this embodiment, the substrate 1 may be a thin film transistor substrate on which a thin film transistor structure (not shown) is disposed, and the opposite substrate 2 may be a color filter substrate on which a color filter layer (not shown) and a black matrix layer (not shown) are disposed. However, in other embodiments of the present invention, the color filter layer (not shown) may also be disposed on the substrate 1, and at this time, the substrate 1 is a thin film transistor (COA) integrated with a color filter array; or a black matrix layer (not shown) may be disposed on the substrate 1, in which case the substrate 1 is a thin film transistor (BOA) integrated with a black matrix. In addition, the display layer 3 in the display device of the present embodiment is a liquid crystal layer. Next, the structural features of the elements provided above the substrate 1 will be described in detail.
Fig. 2 is a top view of the elements on the substrate of the display device of the present embodiment. Referring to fig. 1 and 2, the display device of the present embodiment includes: a substrate 1; a light-shielding pattern layer 12 on the substrate 1; a semiconductor layer 11 located on the light-shielding pattern layer 12, wherein the semiconductor layer 11 is partially overlapped with the light-shielding pattern layer 12; a first insulating layer (not shown in the figure because it is formed on the entire surface of the substrate 1 and has no boundary in the top view) on the semiconductor layer 11; a first electrode layer on the first insulating layer (not shown), the first electrode layer including a plurality of first gate lines 13 extending along a first direction X; a second insulating layer (not shown in the figure because it is formed on the entire surface of the substrate 1 and has no boundary in the top view) on the first electrode layer; a second electrode layer on the second insulating layer (not shown), the second electrode layer including a plurality of first data lines 141 and a plurality of electrode pads 143 extending along a second direction Y, the first direction X being different from the second direction Y; and a plurality of pixel regions P defined by the first gate lines 13 and the first data lines 141. The semiconductor layer 11 has a semiconductor layer edge 111, the light-shielding pattern layer 12 has a light-shielding edge 121, and a distance D1 between the semiconductor layer edge 111 and the light-shielding edge 121 may be between 2 μm and 10 μm. In addition, the semiconductor layer 11, the first data line 141, and the first gate line 13 constitute a plurality of thin film transistor units (not shown).
Here, the substrate 1 may be made of a substrate material such as glass, plastic, flexible material, and film. When the substrate 1 is made of plastic, flexible material or film, the display device of the embodiment may be a flexible display device. The semiconductor layer 11 may be a low temperature polysilicon semiconductor layer. The first insulating layer and the second insulating layer can be made of insulating layer materials such as oxide, nitride or oxynitride. The light-shielding pattern layer 12, the first electrode layer and the second electrode layer can be made of conductive materials, such as metals, alloys, metal oxides, metal oxynitrides, or other electrode materials. However, in other embodiments of the present invention, the material of the aforementioned components is not limited thereto.
FIG. 3 is another top view of the device on the substrate of the display apparatus of the present embodiment; here, for clarity of illustration, the fill lines of the same elements as in fig. 2 are not shown in fig. 3. As shown in fig. 2 and 3, in the display device of the present embodiment, each pixel region P is correspondingly provided with a pixel electrode 15, and the pixel electrode 15 is electrically connected to the electrode pad 143; wherein the pixel electrode 15 has a plurality of slits 151 and presents a comb-like structure. Here, the pixel electrode 15 may be made of a transparent conductive electrode material such as ITO, IZO, or ITZO; however, in other embodiments of the present invention, the material of the pixel electrode 15 is not limited thereto.
As shown in fig. 1, in the present embodiment, a color filter substrate having a color filter layer (not shown) and a black matrix layer (not shown) is disposed above the opposite substrate 2. When the substrate 1 of the present embodiment is paired with the opposite substrate 2, the relative arrangement of the black matrix layer and the elements above the substrate 1 is as shown in fig. 4. Fig. 4 is a plan view of an element on a substrate and a black matrix layer on a counter substrate of the display device of the present embodiment; the black matrix layer has a plurality of openings 21 corresponding to each pixel region P to expose the pixel electrodes 15.
Example 2
FIGS. 5 and 6 are top views of the devices on the substrate of the display device of the present embodiment; and fig. 7 is a top view of the elements on the substrate and the black matrix layer on the opposite substrate of the display device of the present embodiment. Here, fig. 5 to 7 are the same views as fig. 2 to 4 of embodiment 1, respectively.
Comparing fig. 2 to 4 of embodiment 1 and fig. 5 to 7 of this embodiment, this embodiment is similar to the display device and the display device of embodiment 1 except that the extending direction (i.e., the second direction Y) of the first data line 141 of embodiment 1 is perpendicular to the extending direction (i.e., the first direction X) of the first gate line 13, and the extending direction (i.e., the second direction Y) of the first data line 141 of this embodiment is not perpendicular to the extending direction (i.e., the first direction X) of the first gate line 13. In particular, in the present embodiment, as shown in fig. 6, the second direction Y is a longitudinal direction of the slit 151 of the pixel electrode 15.
Example 3
FIGS. 8 and 9 are top views of the elements on the substrate of the display device of the present embodiment; and fig. 10 is a top view of the elements on the substrate and the black matrix layer on the opposite substrate of the display device of the present embodiment. Here, fig. 8 to 10 are the same views as fig. 5 to 7 of embodiment 2, respectively.
Comparing fig. 5 to 7 of embodiment 2 and fig. 8 to 10 of this embodiment, this embodiment is similar to the display device and the display device of embodiment 2 except that the display device of this embodiment is not provided with the light shielding pattern layer 12 of embodiment 2 (as shown in fig. 5). In addition, in the present embodiment, as shown in fig. 8, the minimum distance D2 between the edges 111 and 112 of the semiconductor layers may be between 2 μm and 10 μm.
Test example 1
In this test example, the display device of example 1 was used for the test. Here, as shown in fig. 4, under the full gray scale condition, a light is provided to pass through the display device, and the brightness from any point in the opening 21 of the black matrix layer to the edge of the opening 21 in the extending direction of the first direction X is measured. Here, the "full gray level" refers to a state where a highest voltage can be applied to make the pixel region P fully bright.
More specifically, as shown in fig. 4, a point P1, a point P1 ', a point P2 and a point P2' are defined in the pixel region P; the point P1 and the point P1 'are located on the pixel electrode 15 in the opening 21, and the point P2 and the point P2' are located at the edge of the opening 21. However, the positions of the point P1, the point P1 ', the point P2 and the point P2' are not particularly limited as long as the first virtual line connecting the point P1 to the point P2 and the second virtual line connecting the point P1 'to the point P2' satisfy the following conditions.
The first virtual line connecting the point P1 to the point P2 is located in the pixel region P and substantially parallel to the second direction Y. The first virtual line connecting the point P1 to the point P2 has a first segment S1 overlapping the semiconductor layer 11. A second virtual line connecting the point P1 'to the point P2' is located in the pixel region P and substantially parallel to the second direction Y. The second dummy line connecting the point P1 'to the point P2' has a second segment S2 not overlapping the semiconductor layer 11. The first segment S1 and the second segment S2 have a same distance D3 from the first gate line 13, respectively, and the length of the first segment S1 is equal to the length of the second segment S2.
In the present invention, the first gate line 13 is adjacent to the pixel region P, and the first gate line 13 may overlap with or not overlap with the pixel region P. The second segment S2 is located between the semiconductor layer 111 and the first data line 141, or the distance between the second segment S2 and the first data line 141 may be between 1 μm and 10 μm.
In the present invention, the phrase "the first/second virtual lines are substantially parallel to the second direction Y" means that the first/second virtual lines are completely parallel to the second direction Y, or the included angle between the first/second virtual lines and the second direction Y is between 0 degree and ± 5 degrees.
Here, the brightness is measured at a first virtual line from point P1 to point P2 and a second virtual line from point P1 'to point P2'. Wherein, the second direction Y is the length direction of the slit 151 of the pixel electrode 15; and the transparency of the semiconductor layer 11 is 60%. However, the transparency of the semiconductor layer 11 is not limited thereto.
Fig. 11 is a graph of the luminance measurement result of the present test example, in which the horizontal axes are the relative positions of the first virtual line (the connection line from the point P1 to the point P2) and the second virtual line (the connection line from the point P1 'to the point P2'), respectively, in the instrumental measurement, rather than the actual distance. More specifically, in the measurement process for obtaining the result of FIG. 11, the first virtual line connecting the point P1 to the point P2 is divided into 60 equal parts to measure the gray-scale luminance from the point P1 to the point P2; the measurement process of the second virtual line connecting the point P1 'to the point P2' is the same as the above, and therefore, the description thereof is omitted; then, the gray-scale luminance from the point P1 to the point P2 and the gray-scale luminance from the point P1 'to the point P2' are integrated to obtain the result shown in fig. 11, wherein the area between the two dotted lines parallel to the vertical axis is the first segment S1 and the second segment S2 shown in fig. 4. However, the positions of the points P1, P2, P1 'and P2' are not limited to the positions shown in fig. 4, and may be changed with measuring instruments and measures as long as the first section S1 and the second section S2 meet the aforementioned definition; for example, points P1 and P1 'may be located in the middle of opening 21, while points P2 and P2' may be located at the edges of opening 21; however, the present invention is not limited thereto.
As shown in the results of fig. 11, the first luminance integrated value obtained in the first section S1 of the first virtual line (the connection line from the point P1 to the point P2) shown in fig. 4 is significantly smaller than the second luminance integrated value obtained in the second section S2 of the second virtual line (the connection line from the point P1 'to the point P2'). Further, when a first luminance integrated value obtained in the first section S1 of the first virtual line (the line connecting the point P1 to the point P2) in fig. 11 is denoted by a1 and a second luminance integrated value obtained in the second section S2 of the second virtual line (the line connecting the point P1 'to the point P2') is denoted by a2, it is calculated by the following formula (1):
(A2-A1)/A2≈60% (1)
it can be seen that the result calculated by the formula (1) is 60%, which is almost the same as the value of 60% transparency of the semiconductor layer 11 in the display device of this test example. By adjusting the transparency of the semiconductor layer 11, the relative relationship between the luminance integrated values of the first section S1 and the second section S2 can be changed.
Test example 2
In this test example, the display device of example 1 was used to test the front-view transmittance and contrast of the entire pixel region in fig. 4, where the transparency of the semiconductor layer 11 is from 0% to 100%; wherein, the adjacent pixel areas up and down are same color pixel units. In addition, when the transparency of the semiconductor layer 11 is 0%, it means that light cannot pass through the semiconductor layer 11, and when the transparency of the semiconductor layer 11 is 100%, it means that light can completely pass through the semiconductor layer 11. Here, the energy distribution of the laser beam used can be adjusted by adjusting the process steps of laser annealing the semiconductor layer 11, thereby adjusting the crystal alignment state of the semiconductor layer 11, and obtaining the semiconductor layer 11 with different transparency.
The test results of this test example are shown in fig. 12, in which the front-view transmittance increases as the transparency increases, but the contrast decreases as the front-view transmittance increases. As shown in fig. 4, the area near the semiconductor layer 11 is likely to have dark streaks due to the irregular alignment of the liquid crystal; therefore, if the semiconductor layer 11 can cover part of the dark fringe, the contrast can be improved, but the front-view transmittance is sacrificed at the same time. Here, if the transparency of the semiconductor layer 11 is between completely opaque (transparency 0%) and completely transparent (transparency 100%), the front-view transmittance can be improved within a tolerable range of contrast reduction. Here, for example, the tolerable range of the contrast reduction is 1%.
Therefore, the results in fig. 12 show that when the transparency of the semiconductor layer 11 is greater than 0% and less than 60%, both the contrast and the front-view transmittance can be achieved. In addition, it is shown from the results of test example 1 that the value calculated by (A2-A1)/A2 almost agrees with the value of the transparency 60% of the semiconductor layer 11. Therefore, in order to achieve both contrast ratio and front view transmittance, the display device of the present invention should conform to the following formula (2):
0<(A2-A1)/A2<0.6 (2)
after conversion, the following formula (3) is obtained:
0.4<A1/A2<1 (3)
as shown by the result of equation (3), in order to achieve both contrast and front-view transmittance, the ratio (a1/a2) of the first luminance integrated value a1 to the second luminance integrated value a2 of the display device of the present invention is greater than 0.4 and less than 1; for example, the ratio (a1/a2) of the first luminance integrated value a1 to the second luminance integrated value a2 is greater than 0.6 and less than 0.8.
Test example 3
Fig. 13A to 13C are graphs showing the luminance measurement results of the present test example, which are graphs showing the measurement results of red, green and blue pixel regions of the display device of example 1, wherein the transparency of the semiconductor layer of the red, green and blue pixel regions is about 29%, 30% and 26%, respectively, and the upper and lower adjacent pixel regions are same-color pixel units. The test method of this test example was the same as that of test example 1. In fig. 13A to 13C, the horizontal axis definition is the same as that in fig. 11, and therefore, the description thereof is omitted; and the gray scale brightness of the vertical axis is the brightness relative value.
Referring to fig. 4, in the measurement process of obtaining the result of fig. 13A, the first virtual line connecting the point P1 to the point P2 is divided into equal divisions of numbers as shown on the horizontal axis to measure the gray-scale luminance from the point P2 to the point P1; the second virtual line connecting point P2 'to point P1' and the measurement process of FIGS. 13B and 13C are the same as those described above, and therefore, the description thereof is omitted here. In fig. 13A to 13C, the regions between the two dashed lines parallel to the longitudinal axis are the first section S1 and the second section S2 shown in fig. 4.
As shown in fig. 13A to 13C, the first luminance integrated value a1 of the first section S1 is smaller than the second luminance integrated value a2 of the second section S2 regardless of the red, green and blue pixel areas. In addition, in the red, green and blue pixel regions, the difference between the first luminance integrated value a1 and the second luminance integrated value a2 is about 29.78%, 30.86% and 26.32%, respectively; which is almost identical to the transparency of the semiconductor layer in the red, green and blue pixel regions.
Test example 4
Fig. 14A to 14C are graphs showing the luminance measurement results of the present test example, which are graphs showing the measurement results of red, green and blue pixel regions of the display device of example 2, wherein the transparency of the semiconductor layer of the red, green and blue pixel regions is about 18%, 19% and 19%, respectively, and the upper and lower adjacent pixel regions are same-color pixel units. The test method of this test example was the same as that of test example 1. In fig. 14A to 14C, the horizontal axis definition is the same as that in fig. 11, and therefore, the description thereof is omitted; and the gray scale brightness of the vertical axis is the brightness relative value.
Referring to fig. 7, in the measurement process of obtaining the result of fig. 14A, the first virtual line connecting the point P1 to the point P2 is divided into equal divisions of numbers as shown on the horizontal axis to measure the gray-scale luminance from the point P1 to the point P2; the second virtual line connecting point P1 'to point P2' and the measurement process of FIGS. 14B and 14C are the same as those described above, and therefore, the description thereof is omitted here. In fig. 14A to 14C, the regions between the two dashed lines parallel to the longitudinal axis are the first section S1 and the second section S2 shown in fig. 7.
As shown in fig. 14A to 14C, the first luminance integrated value a1 of the first section S1 is smaller than the second luminance integrated value a2 of the second section S2 regardless of the red, green and blue pixel areas. In addition, in the red, green and blue pixel regions, the difference between the first luminance integrated value a1 and the second luminance integrated value a2 is about 18.98%, 19.79% and 19.15%, respectively; which is almost identical to the transparency of the semiconductor layer in the red, green and blue pixel regions.
Test example 5
Fig. 15A to 15C are graphs showing the luminance measurement results of the present test example, which are graphs showing the measurement results of the red, green and blue pixel regions of the display device of example 3, wherein the transparency of the semiconductor layer of the red, green and blue pixel regions is about 27%, 50% and 31%, respectively, and the upper and lower adjacent pixel regions are same-color pixel units. The test method of this test example was the same as that of test example 1. In fig. 15A to 15C, the horizontal axis definition is the same as that in fig. 11, and therefore, the description thereof is omitted; and the gray scale brightness of the vertical axis is the brightness relative value.
Referring to fig. 10, in the measurement process of obtaining the result of fig. 15A, the first virtual line connecting the point P1 to the point P2 is divided into equal divisions of numbers as shown on the horizontal axis to measure the gray-scale luminance from the point P1 to the point P2; the second virtual line connecting point P1 'to point P2' and the measurement process of FIGS. 15B and 15C are the same as those described above, and therefore, the description thereof is omitted here. In fig. 15A to 15C, the regions between the two broken lines parallel to the longitudinal axis are the first section S1 and the second section S2 shown in fig. 10.
As shown in fig. 15A to 15C, the first luminance integrated value a1 of the first section S1 is smaller than the second luminance integrated value a2 of the second section S2 regardless of the red, green and blue pixel areas. In addition, in the red, green and blue pixel regions, the difference between the first luminance integrated value a1 and the second luminance integrated value a2 is about 27.32%, 50.20% and 31.53%, respectively; which is almost identical to the transparency of the semiconductor layer in the red, green and blue pixel regions.
Here, the measurement results of fig. 13A to 15C of test examples 3 to 5 were further compared, the luminance integrated value of the first section S1 (i.e., the first luminance integrated value a1 described in test example 1) was calculated, the luminance integrated value of the second section S2 (i.e., the second luminance integrated value a2 described in test example 1) was calculated, and the ratio of the first luminance integrated value a1 to the second luminance integrated value a2 (a1/a2) was calculated. In the display apparatus of test example 3, the first luminance integrated value a1 and the second luminance integrated value a2 differ by about 29.78%, 30.86% and 26.32% in the red, green and blue pixel regions, respectively. In the display apparatus of test example 4, the first luminance integrated value a1 and the second luminance integrated value a2 differ by about 18.98%, 19.79% and 19.15% in the red, green and blue pixel regions, respectively. In the display apparatus of test example 5, the first luminance integrated value a1 and the second luminance integrated value a2 differ by about 27.32%, 50.20%, and 31.53% in the red, green, and blue pixel regions, respectively. The results are collated in FIG. 16.
As shown in fig. 16, in test examples 3 to 5, the transparency of the semiconductor layer in the green pixel region was adjusted to be greater than that in the red and blue pixel regions by adjusting the transparency of the semiconductor layer in the red, green and blue pixel regions, so that the ratio of a1/a2 in the green pixel region was greater than that of a1/a2 in the red and blue pixel regions.
Since human eyes have the strongest sensitivity to the brightness of green, in the test examples 3 to 5, the brightness of the green pixel region can be improved by maximizing the transparency of the semiconductor layer in the green pixel region. In addition, as shown in the results of test examples 3 to 5, by adjusting the transparency of the semiconductor layer in the pixel region, the brightness of the pixel region with different colors can be changed, and the position of the white point can be adjusted, as shown in fig. 17; in particular, because of the requirement for a blue tunable cold color point, but not all display devices, the transparency of the semiconductor layer in the blue pixel region is lower than that in the green pixel region.
In the present invention, the display device further includes a display medium disposed on the substrate. The display medium can be a liquid crystal layer, an organic light emitting layer, or a micro light emitting diode. When the display medium is a liquid crystal layer, the display device is a Liquid Crystal Display (LCD). When the display medium is an organic light emitting layer, the display device is an organic light emitting display device (OLED). When the display medium is a micro-led, the display device is a micro-led display device (micro-led).
In addition, in the present invention, when the substrate used in the display device is plastic, flexible material or film, the display device may be a flexible display device, such as a flexible liquid crystal display device, a flexible organic light emitting display device or a flexible micro light emitting diode display device.
In the present invention, the display device manufactured in the foregoing embodiment can be used in combination with a touch panel as a touch display device. Meanwhile, the display device or the touch display device manufactured in the foregoing embodiment of the invention may be applied to any electronic device that needs a display screen, such as a display, a mobile phone, a notebook computer, a video camera, a music player, a mobile navigation device, a television, and other electronic devices that need to display images.
The above-described embodiments are merely exemplary for convenience in explanation, and the scope of the claims of the present invention should be determined by the claims rather than by the limitations of the above-described embodiments.

Claims (19)

1. A display device, comprising:
a substrate;
a semiconductor layer on the substrate;
a first insulating layer on the semiconductor layer;
a first electrode layer on the first insulating layer, the first electrode layer including a plurality of first gate lines extending in a first direction;
a second insulating layer on the first electrode layer;
a second electrode layer on the second insulating layer, the second electrode layer including a plurality of first data lines extending in a second direction, the first direction being different from the second direction; and
a plurality of pixel regions defined by the first gate lines and the first data lines;
wherein, a first virtual line and a second virtual line are defined in one of the pixel regions, and the first virtual line and the second virtual line are respectively substantially parallel to the second direction;
wherein, the first dummy line is defined to have a first section overlapping with the semiconductor layer, the second dummy line is defined to have a second section not overlapping with the semiconductor layer, the first section and the second section have a same distance with the first gate line, respectively, and the length of the first section is equal to that of the second section;
when a light ray passes through the display device, the first section corresponds to a first section brightness, the second section corresponds to a second section brightness, the first section brightness has a first brightness integral value, the second section brightness has a second brightness integral value, and the ratio of the first brightness integral value to the second brightness integral value is greater than 0.4 and less than 1.
2. The display apparatus according to claim 1, wherein the pixel areas include a green pixel area and a blue pixel area, and a ratio of the first luminance integrated value to the second luminance integrated value in the green pixel area is greater than a ratio of the first luminance integrated value to the second luminance integrated value in the blue pixel area.
3. The display apparatus according to claim 1, wherein the pixel regions include a green pixel region and a red pixel region, and a ratio of the first luminance integrated value to the second luminance integrated value in the green pixel region is larger than a ratio of the first luminance integrated value to the second luminance integrated value in the red pixel region.
4. The display apparatus according to claim 1, wherein a ratio of the first luminance integrated value to the second luminance integrated value is greater than 0.6 and less than 0.8.
5. The display device of claim 1, further comprising a light-shielding pattern layer disposed between the substrate and the semiconductor layer.
6. The display device according to claim 5, wherein the light shielding pattern layer partially overlaps with the semiconductor layer.
7. The display device according to claim 6, wherein the semiconductor layer has a semiconductor layer edge, the light shielding pattern layer has a light shielding edge, and a distance between the semiconductor layer edge and the light shielding edge is between 2 μm and 10 μm.
8. The display device according to claim 1, wherein the transparency of the semiconductor layer is greater than 0% and less than 60%.
9. A display device, comprising:
a substrate;
a semiconductor layer on the substrate;
a first insulating layer on the semiconductor layer;
a first electrode layer on the first insulating layer, the first electrode layer including a plurality of first gate lines extending in a first direction;
a second insulating layer on the first electrode layer;
a second electrode layer on the second insulating layer, the second electrode layer including a plurality of first data lines extending in a second direction, the first direction being different from the second direction; and
a plurality of pixel regions defined by the first gate lines and the first data lines;
wherein, a pixel region is defined therein, the pixel region has a first segment and a second segment, the first segment is substantially parallel to the second direction and overlapped with the semiconductor layer, the second segment is substantially parallel to the second direction and not overlapped with the semiconductor layer, the first segment and the second segment have a same distance with the first gate line, respectively, and the length of the first segment is equal to that of the second segment;
when a light ray passes through the display device, the first section corresponds to a first section brightness, the second section corresponds to a second section brightness, the first section brightness has a first brightness integral value, the second section brightness has a second brightness integral value, and the ratio of the first brightness integral value to the second brightness integral value is greater than 0.4 and less than 1.
10. The display apparatus according to claim 9, wherein the pixel areas include a green pixel area and a blue pixel area, and a ratio of the first luminance integrated value to the second luminance integrated value in the green pixel area is greater than a ratio of the first luminance integrated value to the second luminance integrated value in the blue pixel area.
11. The display apparatus according to claim 9, wherein the pixel areas include a green pixel area and a red pixel area, and a ratio of the first luminance integrated value to the second luminance integrated value in the green pixel area is greater than a ratio of the first luminance integrated value to the second luminance integrated value in the red pixel area.
12. The display apparatus according to claim 9, wherein a ratio of the first luminance integrated value to the second luminance integrated value is greater than 0.6 and less than 0.8.
13. The display device according to claim 9, wherein the transparency of the semiconductor layer is greater than 0% and less than 60%.
14. A display device, comprising:
a substrate;
a shading pattern layer located on the substrate;
a semiconductor layer on the light-shielding pattern layer and partially overlapped with the light-shielding pattern layer;
a first insulating layer on the semiconductor layer;
a first electrode layer on the first insulating layer, the first electrode layer including a plurality of first gate lines extending in a first direction;
a second insulating layer on the first electrode layer;
a second electrode layer on the second insulating layer, the second electrode layer including a plurality of first data lines extending in a second direction, the first direction being different from the second direction; and
a plurality of pixel regions defined by the first gate lines and the first data lines;
wherein, a pixel area is defined in which a first section and a second section are provided, the first section is substantially parallel to the second direction and overlapped with the semiconductor layer without overlapping with the light shielding pattern layer, the second section is substantially parallel to the second direction and not overlapped with the semiconductor layer without overlapping with the light shielding pattern layer, the first section and the second section have a same distance with the first gate line respectively, and the length of the first section is equal to the length of the second section;
when a light ray passes through the display device, the first section corresponds to a first section brightness, the second section corresponds to a second section brightness, the first section brightness has a first brightness integral value, the second section brightness has a second brightness integral value, and the ratio of the first brightness integral value to the second brightness integral value is greater than 0.4 and less than 1.
15. The display apparatus according to claim 14, wherein the pixel areas include a green pixel area and a blue pixel area, and a ratio of the first luminance integrated value to the second luminance integrated value in the green pixel area is greater than a ratio of the first luminance integrated value to the second luminance integrated value in the blue pixel area.
16. The display apparatus according to claim 14, wherein the pixel regions include a green pixel region and a red pixel region, and a ratio of the first luminance integrated value to the second luminance integrated value in the green pixel region is greater than a ratio of the first luminance integrated value to the second luminance integrated value in the red pixel region.
17. The display apparatus according to claim 14, wherein a ratio of the first luminance integrated value to the second luminance integrated value is greater than 0.6 and less than 0.8.
18. The display device according to claim 14, wherein the semiconductor layer has a semiconductor layer edge, the light-shielding pattern layer has a light-shielding edge, and a distance between the semiconductor layer edge and the light-shielding edge is between 2 μm and 10 μm.
19. The display device according to claim 14, wherein the transparency of the semiconductor layer is greater than 0% and less than 60%.
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