CN106898679A - A kind of quantum dot LED-backlit device and preparation method thereof - Google Patents
A kind of quantum dot LED-backlit device and preparation method thereof Download PDFInfo
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- CN106898679A CN106898679A CN201710211044.2A CN201710211044A CN106898679A CN 106898679 A CN106898679 A CN 106898679A CN 201710211044 A CN201710211044 A CN 201710211044A CN 106898679 A CN106898679 A CN 106898679A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention discloses a kind of quantum dot LED-backlit device and preparation method thereof.This kind of quantum dot LED-backlit device is quantum dot powder lower convex type remote graphics backlight device；Preparation method is the packing colloid that powder is evenly distributed dorsad high speed centrifugation, and accelerates dorsad centrifugal process using hollow granule so that the powder in packing colloid is quickly unanimously dorsad settled down to a glass face top, realizes prepared by the single step of long-range structure；Quantum dot has fluorescence efficiency and excitation higher relative to conventional fluorescent powder, long-range structure improves effective launching efficiency of quantum dot, be obviously improved light efficiency and improve space color temperature distribution, lower convex type figure has spotlight effect, for backlight device performance advantageously.LED-backlit device of the invention has the advantages that excellent performance, preparation method are simple and quick, it is adaptable to industrial mass production.
Description
Technical field
The present invention relates to machine-building and optical component manufacture field, and in particular to a kind of quantum dot LED-backlit device
And preparation method thereof.
Technical background
Backlight device is closely connected with the life of people, has a wide range of applications.Backlight device is a kind of by supplying
Adequate brightness and equally distributed light source are answered, so that display module can normally show the device of image.Existing LED quantum dots show
In display screen, light emitting diode is used（LED：Light Emitting Diode）Middle quantum dot is uniformly distributed in packing colloid
Portion, the utilization that is excited is difficult to positioned at the quantum dot of chip bottom, and because chip is Lambert emission light source, in device wide-angle area
Light is weaker at domain, and space color temperature uniformity is poor, therefore the uniformity that backlight shows is poor.Traditional LED manufacturing industry is proposed with far
Phosphor powder layer is sprayed into white glue top by the mode of journey spraying, so that fluorescent material is gathered in top so that fluorescent material is abundant
It is utilized.But the manufacture craft of double-layer structure is relatively complicated.
The content of the invention
It is efficient the invention provides a kind of novel remote quantum dot for the shortcoming and deficiency that overcome prior art to exist
LED-backlit device and preparation method thereof.
Instant invention overcomes the cumbersome defect of the technique of traditional two steps layer-stepping long-range structure device presence, there is provided a kind of
The preparation method of quantum dot LED-backlit device, lower convex long-range structure, and this kind of quantum dot LED back of the body are prepared by single step
Optical device has the advantages that preparation process is simple, light efficiency are high, it is easy to accomplish industrialized production.
The present invention is achieved through the following technical solutions.
A kind of preparation method of quantum dot LED-backlit device, comprises the following steps：
（1）The preparation of packing colloid：Choose low-density hollow granule, quantum dot and high-density optical silica gel and sequentially add deaeration pottery
In porcelain cup, agitation beads are added, vacuum defoamation is carried out in vacuum degasing machine, obtain packing colloid；
（2）Constant temperature dispensing and envelope moulding face：LED support is placed on heated at constant temperature platform after preheating, using the encapsulation for preparing
Colloid carries out dispensing to the LED support for being placed on warm table；The polyimides high temperature gummed tape that surface scribbles release agent is adjacent to again
In LED support cup face one end for dispensing glue, and this glass of face one end is carried out into one direction low temperature envelope pressure, make polyimides high temperature gummed tape
It is complete to fit in a glass face, and by unnecessary packing colloid extrusion, make packing colloid concordant with carrier cup face；
（3）Powder is dorsad centrifuged at a high speed：The LED support that polyimides high temperature gummed tape will have been pasted dorsad is put into supercentrifuge, i.e.,
Heat-radiating substrate back side one end of the LED support of intrinsic chi frame is placed towards centrifugal shaft, is centrifuged；
（4）Device solidifies：LED support after centrifugation is positioned in curing oven, is solidified after preheating, curing molding, cooling,
Tear polyimides high temperature gummed tape off, obtain the quantum dot LED-backlit device.
Further, step（1）In, the high-density optical silica gel is that density is 1-1.5g/cm after mixing3Silica gel,
It is 1.02 g/cm including density after mixing2DOW CORNING OE6351 it is low folding silica gel, mixing after density be 1.18 g/cm2Road health
Peaceful OE6650 folding silica gel high.
Further, step（1）In, the density of the low-density hollow granule is 0.6-0.8g/cm2, including TiO2Or
ZnO hollow granules.
Further, step（1）In, a diameter of 20 ~ 40nm of the low-density hollow granule.
Further, step（1）In, the dominant wavelength of the quantum dot is 540-560nm, including CdSe or ZnS quantum
Point；When supercentrifuge is centrifuged, low-density hollow granule under high-density optical silica gel environment floating upward quickly to cup face, favorably
In driving and accelerate quantum dot to be unanimously rapidly dorsad centrifuged to cup face.
Further, step（1）In, a diameter of 5 ~ 8nm of the quantum dot.
Further, step（1）In, in mass ratio, low-density hollow granule：Quantum dot：High density silica gel=1:5:400~
1:5:450。
Further, step（1）In, in mass ratio, low-density hollow granule：Quantum dot：High density silica gel=1:5:
400 or 1:5:450, correspondingly prepare the backlight device for drawing colour temperature be respectively it is just white（5000-6500K）, cool white（6500-
8000K）.
Further, step（2）In, the temperature of the preheating is 40 ~ 50 DEG C, and the time is 10 ~ 15min.
Further, step（2）In, the temperature of the low temperature envelope pressure is 50 DEG C -60 DEG C.
Further, step（2）In, the dispensing amount for dispensing glue is advisable with carrier cup face dimpling.
Further, step（2）In, it is that to carry out low temperature using the envelope broad-adjustable envelope pressure head of pressure single that the envelope presses through journey
Direction envelope pressure, the envelope spacing side guide end positions of pressure head can be adjusted according to the width of specific backlight device and angle, with true
Be brought into close contact polyimides high temperature gummed tape in backlight device outer surface by guarantor.
Further, step（3）In, the rotating speed of the centrifugation is 10000 ~ 12000rpm, and the time is 5-8min.
The rotating speed of 10000 ~ 12000rpm of supercentrifuge can be used to control the lower convex form of long-range quantum dot pattern；Rotating speed
Lower, convex degree is bigger under long-range quantum dot pattern, more beneficial to optically focused；Rotating speed is higher, and convex degree is got under long-range quantum dot pattern
It is small, more beneficial to the increase of rising angle.
Further, step（4）In, the preheating is in 60 DEG C of -70 DEG C of heating 20-30min.
Further, step（4）In, the solidification is in 150 DEG C of 3h that are heating and curing.
Further, step（4）In, tearing polyimides high temperature gummed tape off is gently torn off under ion wind environment.
A kind of quantum dot LED-backlit device obtained in the preparation method as described in any of the above-described, including packing colloid and LED
Support；The packing colloid for including quantum dot and hollow granule is packaged in the inside of LED support, by the effect being dorsad centrifuged,
Quantum dot in packing colloid is centrifuged to LED support part in the presence of hollow granule, concordant with backlight device cup face, is in
Lower convex form；LED chip framework is fixed with the LED heat radiation substrate inner surface of LED support bottom.
Compared with prior art, the invention has the advantages that and beneficial effect：
（1）Instant invention overcomes the cumbersome defect of the technique of traditional two steps layer-stepping long-range structure device presence, it is proposed that silica gel,
Quantum dot and hollow granule collectively constitute packing colloid, and seal out preliminary device young bird using constant temperature dispensing and envelope moulding surface technology are pre-
Shape, the quantum dot powder in packing colloid accelerates the common of centrifugal process by the dorsad centrifugation of supercentrifuge and hollow granule
Effect so that quantum dot powder is dorsad settled down at glass face top in the step of lower convex one, then cured shaping, single step is prepared into
To quantum dot LED-backlit device；
（2）Quantum dot LED-backlit device of the invention, quantum dot powder is dorsad settled down to a glass face by the way that single step is dorsad centrifuged
And in lower convex form, lower convex form is conducive to the making full use of so as to improve light efficiency and space color temperature uniformity of quantum dot powder,
The effect of optically focused can also be played, the hollow granule decapacitation that inside adds accelerates outside centrifugation process, moreover it is possible to play good scattering and make
With being conducive to the overall performance of backlight device performance；
（3）Quantum dot LED-backlit device of the invention has the advantages of light efficiency is high, and manufacturing process is simple and quick, it is easy to accomplish work
Industry metaplasia is produced.
Brief description of the drawings
Fig. 1 is the schematic diagram of long-range 1836 small size LED-backlit device prepared by embodiment 1；
Fig. 2 is the schematic diagram of long distance high efficiency ultrathin type small size backlight module prepared by embodiment 2；
Fig. 3 is envelope pressure principle schematic；
Fig. 4 is dorsad rotary process schematic diagram；
Fig. 5 is long-range 1836 small size LED-backlit device microscope section shooting figure.
Specific embodiment
With reference to embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
As shown in figure 3, being the schematic diagram of the envelope pressure principle during constant temperature dispensing and envelope moulding face, including seal pressing plate 7, gather
Acid imide high temperature gummed tape 8, side guide 9, locating pin 10 and displacement slot 11；According to the size of backlight device, by adjusting side
Pressing plate 9 makes polyimides high temperature gummed tape 8 fit in device cup face, and locking positioning nail 10 is determined polyimides high temperature gummed tape 8
Position, envelope pressing plate 7 is acted on by one direction pressure, and envelope pressure is carried out to polyimides high temperature gummed tape 8, makes backlight device inside uncured
Packing colloid keeps stablizing immobilising state.
Embodiment 1
A kind of manufacture method of long-range small size quantum dot LED-backlit device, comprises the following steps：
（1）The preparation of packing colloid：
Weigh TiO2Hollow granule（Density is 0.8g/cm2, particle diameter is 20nm）0.02g, it is the ZnS quantum of 545nm to weigh wavelength
Point powder（Density is 1.15g/cm2, particle diameter is 6nm）0.1g, density is 1.02 g/cm after weighing mixing2DOW CORNING OE6351
Low folding silica gel 8g so that quality proportioning is low-density TiO2Hollow granule：ZnS quantum dot：High density silica gel=1:5:400, successively
Three kinds of materials are added into deaeration ceramic cup, and adds agitation beads some, vacuum defoamation is carried out in vacuum degasing machine；
（2）Constant temperature dispensing and envelope moulding face：
1836 backlight supports are placed on 40 DEG C of heated at constant temperature platforms and preheat 10min；
The packing colloid that will be prepared is fitted into the rubber gun of point gum machine, the colloid at discharge rubber gun pipette tips, uses remaining glue
Body carries out dispensing to the LED support for being placed on heated at constant temperature platform, and dispensing amount is advisable with carrier cup face dimpling；
The polyimides high temperature gummed tape 8 for scribbling release agent using surface is closely attached on LED support cup face one end for dispensing glue, and should
Hold steady feeding pressing machine port level with both hands, snapping in envelope pressing plate 7, and adjust side guide 9 makes support by completely spacing, locking positioning nail 10,
50 DEG C of low temperature envelope pressures of one direction are carried out, envelope pressure head clamping mode is as shown in figure 3, make polyimides high temperature gummed tape completely fit in cup
Face, and by unnecessary packing colloid extrusion, make packing colloid concordant with carrier cup face；
（3）Powder is dorsad centrifuged at a high speed：The 1836 small size LED supports that polyimides high temperature gummed tape will have been pasted dorsad are snapped at a high speed
Spacing clamp 13 in centrifuge, is placed in the interior bucket 12 of centrifuge, i.e., frame bottom one end of intrinsic chip is towards centrifugal shaft
Place, setting rotating speed is 10000rpm, taken out after timing 5min, schematic diagram is dorsad centrifuged as shown in Figure 4.
（4）Device solidifies：
1836 small size LED-backlit supports are placed into curing oven, 60 DEG C of preheating is carried out in advance, furnace temperature will be solidified after 30 minutes
Degree is set to 150 DEG C, is taken out after 3h, curing molding, after cooling fully that polyimides high temperature gummed tape 8 is light under ion wind environment
Gently tear out, obtain the small size LED-backlit device of long distance high efficiency 1836
The small size LED-backlit device schematic diagram of long distance high efficiency 1836 of preparation is as shown in figure 1, including packing colloid 1 and LED branch
Frame；The packing colloid 1 for including quantum dot and hollow granule is packaged in the inside of LED support, by the effect being dorsad centrifuged, envelope
Quantum dot in dress colloid 1 is centrifuged to LED support part in the presence of hollow granule, concordant with backlight device cup face, is in
Lower convex form；LED chip framework 2 is fixed with the inner surface of LED heat radiation substrate 3 of LED support bottom；Long-range 1836 small size
LED-backlit device microscope section shooting figure is as shown in Figure 5.
Embodiment 2
A kind of manufacture method of long-range ultrathin small size backlight module, comprises the following steps：
（1）The preparation of packing colloid：
Weighing ZnO hollow granule（Density is 0.6g/cm2, particle diameter is 20nm）0.02g, it is the CdSe quantum of 555nm to weigh wavelength
Point powder（Density is 1.2g/cm2, particle diameter is 8nm）0.1g, density is 1.18 g/cm after weighing mixing2DOW CORNING OE6650
Low folding silica gel 9g so that quality proportioning is low-density TiO2Hollow granule：CdSe quantum dot：High density silica gel=1:5:450, according to
It is secondary that three kinds of materials are added into deaeration ceramic cup, and add agitation beads some, vacuum defoamation is carried out in vacuum degasing machine；
（2）Constant temperature dispensing and envelope moulding face：
Ultrathin backlight support is placed on 50 DEG C of heated at constant temperature platforms and preheats 15min；
The packing colloid that will be prepared is fitted into the rubber gun of point gum machine, the colloid at discharge rubber gun pipette tips, uses remaining glue
Body carries out dispensing to the LED support for being placed on heated at constant temperature platform, and dispensing amount is advisable with carrier cup face dimpling；
The polyimides high temperature gummed tape 8 for scribbling release agent using surface is closely attached on LED support cup face one end for dispensing glue, and should
Hold steady feeding pressing machine port level with both hands, snapping in envelope pressing plate 7, and adjust side guide 9 makes support by completely spacing, locking positioning nail 10,
60 DEG C of low temperature envelope pressures of one direction are carried out, envelope pressure head clamping mode is as shown in figure 3, make polyimides high temperature gummed tape completely fit in cup
Face, and by unnecessary packing colloid extrusion, make packing colloid concordant with carrier cup face；
（3）Powder is dorsad centrifuged at a high speed：The ultrathin small size backlight module support of polyimides high temperature gummed tape 8 will have been pasted dorsad
Snap in the spacing clamp 13 in supercentrifuge, be placed in the interior bucket 12 of centrifuge, i.e., frame bottom one end court of intrinsic chip
Placed to centrifugal shaft, setting rotating speed is 12000rpm, taken out after timing 8min, schematic diagram is dorsad centrifuged as shown in Figure 4；
（4）Device solidifies：
Ultrathin small size backlight module support is placed into curing oven, 70 DEG C of preheating is carried out in advance, will solidification after 20 minutes
Furnace temperature is set to 150 DEG C, is taken out after 3h, curing molding, by polyimides high temperature gummed tape 8 in ion wind environment after cooling fully
Under gently tear out, obtain long-range ultrathin type small size backlight module.
The long-range ultrathin small size backlight module schematic diagram for preparing is as shown in Fig. 2 including packing colloid 4 and LED support；
The packing colloid 4 for including quantum dot and hollow granule is packaged in the inside of LED support, by the effect being dorsad centrifuged, encapsulation
Quantum dot in colloid 4 is centrifuged to LED support part in the presence of hollow granule, concordant with backlight device cup face, under being in
Convex form；LED chip framework 5 is fixed with the inner surface of LED heat radiation substrate 6 of LED support bottom.
Above-described embodiment is the present invention preferably implementation method, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from Spirit Essence of the invention in the change, modification made under principle, instead of, combination, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of quantum dot LED-backlit device, it is characterised in that comprise the following steps：
（1）The preparation of packing colloid：Choose low-density hollow granule, quantum dot and high-density optical silica gel and sequentially add deaeration pottery
In porcelain cup, agitation beads are added, vacuum defoamation is carried out in vacuum degasing machine, obtain packing colloid；
（2）Constant temperature dispensing and envelope moulding face：LED support is placed on heated at constant temperature platform after preheating, using the encapsulation for preparing
Colloid carries out dispensing to the LED support for being placed on warm table；The polyimides high temperature gummed tape that surface scribbles release agent is adjacent to again
In LED support cup face one end for dispensing glue, and this glass of face one end is carried out into one direction low temperature envelope pressure, make polyimides high temperature gummed tape
It is complete to fit in a glass face, and by unnecessary packing colloid extrusion, make packing colloid concordant with carrier cup face；
（3）Powder is dorsad centrifuged at a high speed：The LED support that polyimides high temperature gummed tape will have been pasted dorsad is put into supercentrifuge, i.e.,
Heat-radiating substrate back side one end of the LED support of intrinsic chi frame is placed towards centrifugal shaft, is centrifuged；
（4）Device solidifies：LED support after centrifugation is positioned in curing oven, is solidified after preheating, curing molding, cooling,
Tear polyimides high temperature gummed tape off, obtain the quantum dot LED-backlit device.
2. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（1）
In, the high-density optical silica gel is that density is 1-1.5g/cm after mixing3Silica gel, including after mixing density be 1.02 g/cm2
DOW CORNING OE6351 it is low folding silica gel, mixing after density be 1.18 g/cm2DOW CORNING OE6650 folding silica gel high.
3. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（1）
In, the density of the low-density hollow granule is 0.6-0.8g/cm2, including TiO2Or ZnO hollow granules；The low-density is hollow
A diameter of 20 ~ 40nm of particle.
4. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（1）
In, the dominant wavelength of the quantum dot is 540-560nm；The quantum dot includes CdSe or ZnS quantum dot；The quantum dot
A diameter of 5 ~ 8nm.
5. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（1）
In, in mass ratio, low-density hollow granule：Quantum dot：High-density optical silica gel=1:5:400~1:5:450.
6. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（1）
In, in mass ratio, low-density hollow granule：Quantum dot：High-density optical silica gel=1:5:400 or 1:5:450.
7. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（2）
In, the temperature of the preheating is 40 ~ 50 DEG C, and the time is 10 ~ 15min；The temperature of the low temperature envelope pressure is 50 DEG C -60 DEG C；It is described
Dispensing amount for dispensing glue is advisable with carrier cup face dimpling；It is to carry out low temperature using the envelope broad-adjustable envelope pressure head of pressure that the envelope presses through journey
Single direction envelope pressure, the envelope spacing side guide end positions of pressure head can be adjusted according to the width of specific backlight device and angle,
To ensure to be brought into close contact polyimides high temperature gummed tape in backlight device outer surface.
8. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（3）
In, the rotating speed of the centrifugation is 10000 ~ 12000rpm, and the time is 5-8min.
9. a kind of preparation method of quantum dot LED-backlit device according to claim 1, it is characterised in that step（4）
In, the preheating is in 60 DEG C of -70 DEG C of heating 20-30min；The solidification is in 150 DEG C of 3h that are heating and curing；Tear polyimides off
High temperature gummed tape is gently torn off under ion wind environment.
10. a kind of quantum dot LED-backlit device obtained in the preparation method as described in any one of claim 1 ~ 9, it is characterised in that
Including packing colloid（1）And LED support；Include the packing colloid of quantum dot and hollow granule（1）It is packaged in the interior of LED support
Portion, by the effect being dorsad centrifuged, packing colloid（1）In quantum dot be centrifuged to LED support in the presence of hollow granule
Part, it is concordant with backlight device cup face, in lower convex form；The LED heat radiation substrate of LED support bottom（3）It is fixed with inner surface
LED chip framework（2）.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710211044.2A CN106898679A (en) | 2017-03-31 | 2017-03-31 | A kind of quantum dot LED-backlit device and preparation method thereof |
| PCT/CN2017/114152 WO2018176890A1 (en) | 2017-03-31 | 2017-12-01 | Quantum dot led backlight device, and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710211044.2A CN106898679A (en) | 2017-03-31 | 2017-03-31 | A kind of quantum dot LED-backlit device and preparation method thereof |
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| CN108054266A (en) * | 2017-12-14 | 2018-05-18 | 浙江小正科技有限公司 | A kind of processing technology of paster type light emitting type and spray separation agent device |
| WO2018176890A1 (en) * | 2017-03-31 | 2018-10-04 | 华南理工大学 | Quantum dot led backlight device, and manufacturing method thereof |
| CN108776562A (en) * | 2018-05-02 | 2018-11-09 | 江苏迪佳电子有限公司 | A kind of capacitance touch screen production method |
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| WO2018176890A1 (en) | 2018-10-04 |
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