CN106894089B - 碳化硅单晶的制备方法 - Google Patents
碳化硅单晶的制备方法 Download PDFInfo
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- CN106894089B CN106894089B CN201710136891.7A CN201710136891A CN106894089B CN 106894089 B CN106894089 B CN 106894089B CN 201710136891 A CN201710136891 A CN 201710136891A CN 106894089 B CN106894089 B CN 106894089B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- Crystallography & Structural Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201710136891.7A CN106894089B (zh) | 2017-03-09 | 2017-03-09 | 碳化硅单晶的制备方法 |
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CN201710136891.7A CN106894089B (zh) | 2017-03-09 | 2017-03-09 | 碳化硅单晶的制备方法 |
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CN106894089A CN106894089A (zh) | 2017-06-27 |
CN106894089B true CN106894089B (zh) | 2018-03-09 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107385512B (zh) * | 2017-06-30 | 2019-06-25 | 山东天岳先进材料科技有限公司 | 一种抑制碳化硅单晶中碳包裹体缺陷的生长方法 |
JP7030506B2 (ja) * | 2017-12-22 | 2022-03-07 | 昭和電工株式会社 | 炭化珪素単結晶インゴットの製造方法 |
CN110592672B (zh) * | 2018-12-14 | 2020-09-18 | 北京天科合达半导体股份有限公司 | 一种低基面位错密度的碳化硅晶体生长方法 |
CN111197181B (zh) * | 2020-01-08 | 2021-04-30 | 青岛佳恩半导体有限公司 | 一种高纯度超薄碳化硅衬底制备方法 |
CN113174631A (zh) * | 2020-06-05 | 2021-07-27 | 北京世纪金光半导体有限公司 | 符合产业化生产的高厚度低缺陷六英寸碳化硅晶体生长方法 |
AT524248B1 (de) * | 2020-09-28 | 2023-07-15 | Ebner Ind Ofenbau | Verfahren zur Züchtung von Kristallen |
Family Cites Families (9)
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US7993453B2 (en) * | 2006-05-18 | 2011-08-09 | Showa Denko K.K. | Method for producing silicon carbide single crystal |
JP5250321B2 (ja) * | 2008-07-04 | 2013-07-31 | 昭和電工株式会社 | 炭化珪素単結晶成長用種結晶の製造方法並びに炭化珪素単結晶の製造方法 |
JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
CN101724906B (zh) * | 2009-11-18 | 2012-02-22 | 中国科学院物理研究所 | 一种用于生长高质量导电型碳化硅晶体的方法 |
CN102268735B (zh) * | 2011-07-05 | 2013-11-06 | 山东大学 | 一种提高4H-SiC单晶晶型稳定性的方法 |
US9797064B2 (en) * | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9017804B2 (en) * | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
CN103590101B (zh) * | 2013-11-06 | 2016-02-24 | 山东大学 | 一种降低大尺寸高质量SiC单晶中微管密度的生长方法 |
CN104562206B (zh) * | 2015-02-02 | 2017-09-01 | 山东大学 | 一种提高物理气相传输法生长4H‑SiC 晶体晶型稳定性的方法 |
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Effective date of registration: 20210112 Address after: 100089 1204, 12 / F, building 3, 11 Changchun Bridge Road, Haidian District, Beijing Patentee after: Guohong Zhongyu Technology Development Co.,Ltd. Address before: 100081 418, 4th floor, craft building, No.19 Daliushu South Village, Haidian District, Beijing Patentee before: CISRI ENERGY SAVING TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20221020 Address after: 102502 Room 301, Building 1, No. 14, Liushui Industrial Zone, Yanshan District, Beijing Patentee after: Beijing Huikun New Materials Co.,Ltd. Address before: 100089 1204, 12 / F, building 3, 11 Changchun Bridge Road, Haidian District, Beijing Patentee before: Guohong Zhongyu Technology Development Co.,Ltd. |
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Address after: 102502 Room 301, Building 1, No. 14, Liushui Industrial Zone, Yanshan District, Beijing Patentee after: Beijing Yuehai Gold Semiconductor Technology Co.,Ltd. Address before: 102502 Room 301, Building 1, No. 14, Liushui Industrial Zone, Yanshan District, Beijing Patentee before: Beijing Huikun New Materials Co.,Ltd. |