CN106887477A - P-type PERC double-sided solar batteries and preparation method thereof, component and system - Google Patents
P-type PERC double-sided solar batteries and preparation method thereof, component and system Download PDFInfo
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- CN106887477A CN106887477A CN201710124068.4A CN201710124068A CN106887477A CN 106887477 A CN106887477 A CN 106887477A CN 201710124068 A CN201710124068 A CN 201710124068A CN 106887477 A CN106887477 A CN 106887477A
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 229940037003 alum Drugs 0.000 claims abstract description 54
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000004332 silver Substances 0.000 claims abstract description 29
- 229910052709 silver Inorganic materials 0.000 claims abstract description 29
- 239000004411 aluminium Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 71
- 239000011521 glass Substances 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 230000011218 segmentation Effects 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000002003 electrode paste Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 230000009466 transformation Effects 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 6
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- 238000005215 recombination Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
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- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000005336 safety glass Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 229920001577 copolymer Polymers 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention discloses a kind of p-type PERC double-sided solar batteries, including the silver-colored main grid of the back of the body, alum gate line, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；The back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode stack gradually connection from bottom to up；The back side silicon nitride and backside oxide aluminium film set 1 50 groups of lbg units by forming 30 500 lbg areas be arrangeding in parallel after lbg in each lbg area, the alum gate line is connected by lbg area with P-type silicon；Main grid is vertical is connected with back of the body silver for the alum gate line.The invention also discloses a kind of preparation method of p-type PERC double-sided solar batteries, component and system.Using the present invention, can two-sided absorption sunshine, the range of application and raising photoelectric transformation efficiency of expansion solar cell.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of p-type PERC double-sided solar batteries；The present invention is also related to
And a kind of preparation method of p-type PERC double-sided solar batteries, component and system.
Background technology
Crystal silicon solar batteries are a kind of effectively absorption solar radiant energies, and electricity is converted optical energy into using photovoltaic effect
The device of energy, when solar irradiation is in semiconductor P-N junction, forms new hole-electron pair, empty in the presence of P-N junction electric field
Cave flows to P areas by N areas, and electronics flows to N areas by P areas, and electric current is just formed after connecting circuit.
Conventional crystalline silicon solar cell substantially only with front passivating technique, is sunk in front side of silicon wafer with the mode of PECVD
One layer of silicon nitride film of product, reduces recombination rate of few son on preceding surface, can significantly be lifted crystal silicon battery open-circuit voltage and
Short circuit current, so as to lift the photoelectric transformation efficiency of crystal silicon solar battery.
With the requirement more and more higher of the photoelectric transformation efficiency to crystal silicon battery, people begin one's study PERC the back of the body passivation sun
Battery technology.The focus of current industry main flow producer concentrates on the volume production of one side PERC solar cells, and p-type PERC is two-sided too
It is positive can battery, because photoelectric transformation efficiency is high, while two-sided absorption sunshine, generated energy is higher, in actual applications with more
Big use value.But, current p-type PERC double-sided solar batteries are also only some research institutions in grinding that laboratory is done
Study carefully, how to optimize so as to adapt to produce in enormous quantities the structure of p-type PERC double-sided solar batteries, need art technology
Personnel further inquire into and study.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of p-type PERC double-sided solar batteries, two-sided can absorb
Sunshine, expands the range of application of solar cell and improves photoelectric transformation efficiency.
The technical problems to be solved by the invention are, there is provided a kind of preparation method of p-type PERC double-sided solar batteries,
Component and system, can two-sided absorption sunshine, the range of application and raising photoelectric transformation efficiency of expansion solar cell.
In order to solve the above-mentioned technical problem, the invention provides a kind of p-type PERC double-sided solar batteries, including back of the body silver is main
Grid, alum gate line, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；Institute
State back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode from bottom to up according to
Secondary stacking connection；
The back side silicon nitride and backside oxide aluminium film are opened by forming the 30-500 laser be arrangeding in parallel after lbg
Groove area, sets at least 1 group lbg unit in each lbg area, the alum gate line passes through lbg area and P-type silicon
It is connected；Main grid is vertical is connected with back of the body silver for the alum gate line.
As the improvement of above-mentioned technical proposal, when setting 2 groups or more than 2 groups lbg units in each lbg area
When, each group lbg unit be arranged in parallel, and the spacing between two adjacent groups lbg unit is 5-480 μm.
Used as the improvement of above-mentioned technical proposal, every group of lbg unit includes at least one lbg unit, and laser is opened
The pattern of groove unit is circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross or star.
Used as the improvement of above-mentioned technical proposal, every group of lbg unit includes that a pattern is the rectangular laser of strip
Slotted unit.
As the improvement of above-mentioned technical proposal, with group lbg unit along alum gate line bearing of trend interval type configuration, phase
Adjacent two spacing distances of lbg unit are 0.01-50mm.
Used as the improvement of above-mentioned technical proposal, the width in the lbg area is 10-500 μm；The width of alum gate line is
30-550μm；The width of the silver-colored main grid of the back of the body is 0.5-5mm；The radical of the alum gate line is 30-500 bars；The root of the silver-colored main grid of the back of the body
Number is 2-8 bars.
Used as the improvement of above-mentioned technical proposal, the back of the body silver main grid is continuous straight grid；Or the silver-colored main grid of the back of the body is in interval point
Section is set；Or the silver-colored main grid of the back of the body is set in space segmentation, is connected by connected region between each adjacent sectional.The shape of connected region
Shape can connect line, triangle, quadrangle, pentagon, circle, the combination of oval or various figures.
Correspondingly, the present invention also provides a kind of preparation method of p-type PERC double-sided solar batteries, comprises the following steps：
（1）Matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；
（2）It is diffused in front side of silicon wafer, forms N-type emitter stage；
（3）Phosphorosilicate glass and periphery P N knots that removal diffusion process is formed, and silicon chip back side is polished；
（4）In silicon chip back side deposited oxide aluminium film and silicon nitride film；
（5）In front side of silicon wafer silicon nitride film；
（6）To carrying out lbg on the silicon nitride film and pellumina of silicon chip back side；
（7）In the silicon chip back side silver-colored main grid paste of the printing back of the body, drying；
（8）Aluminium paste is printed in lbg area, is allowed to back of the body silver that main grid paste is vertical is connected；
（9）Positive silver electrode paste is printed in front side of silicon wafer；
（10）High temperature sintering is carried out to silicon chip, the silver-colored main grid of the back of the body, alum gate line and positive silver electrode is formed；
（11）Anti- LID annealing is carried out to silicon chip, p-type PERC double-sided solar batteries are obtained.
Correspondingly, the present invention also provides a kind of PERC double-sided solar batteries component, including PERC solar cells and envelope
Package material, the PERC solar cells are p-type PERC double-sided solar batteries of the present invention.
Correspondingly, the present invention also provides a kind of PERC solar energy systems, including PERC solar cells, the PERC sun
Energy battery is p-type PERC double-sided solar batteries of the present invention.
Implement the embodiment of the present invention, have the advantages that：
P-type PERC double-sided solar batteries of the present invention are provided with a plurality of alum gate line be arrangeding in parallel in cell backside, not only replace
For full aluminum back electric field in existing one side solar cell, the function of back side extinction is realized, also serve as the secondary grid knot in back of the body silver electrode
Structure is used to conduct electronics.P-type PERC double-sided solar batteries of the present invention are made, the consumption of silver paste and aluminium paste can be saved, dropped
Low production cost, and two-sided absorption luminous energy is realized, it is significantly expanded the range of application of solar cell and improves opto-electronic conversion effect
Rate.
Preparation method, component and the system used according to the p-type PERC double-sided solar batteries equally have above-mentioned
Advantage.
Brief description of the drawings
Fig. 1 is a kind of structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 2 is a kind of another structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 3 is a kind of another structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 4 is a kind of another structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 5 is a kind of lbg area first embodiment structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 6 is a kind of lbg area second embodiment structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 7 is a kind of lbg area 3rd embodiment structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 8 is a kind of lbg area fourth embodiment structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 9 is a kind of example structure schematic diagram of lbg area the 5th of p-type PERC double-sided solar batteries of the invention；
Figure 10 is a kind of lbg area sixth embodiment structural representation of p-type PERC double-sided solar batteries of the invention;
Figure 11 is a kind of example structure schematic diagram of lbg area the 7th of p-type PERC double-sided solar batteries of the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
Step ground is described in detail.
Existing one side solar cell is provided with the whole back side that full aluminum back electric field is covered in silicon chip at the back side of battery, entirely
The effect of aluminum back electric field is to improve open-circuit voltage Voc and short circuit current Jsc, forces minority carrier away from surface, Shao Shuozai
Sub- recombination rate reduction is flowed, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, with full aluminium
The rear surface of solar cell for carrying on the back electric field cannot absorb luminous energy, can only front absorption luminous energy, the comprehensive photoelectric transformation efficiency hardly possible of battery
To be greatly improved.
For above-mentioned technical problem, as shown in figure 1, the present invention provides a kind of p-type PERC double-sided solar batteries, including the back of the body
Silver-colored main grid 1, alum gate line 2, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, the and of front side silicon nitride film 7
Positive silver electrode 8；The back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, front side silicon nitride film 7 and just
Silver electrode 8 stacks gradually connection from bottom to up；
The back side silicon nitride 3 and backside oxide aluminium film 4 are by forming the laser that 30-500 groups be arranged in parallel after lbg
Slotted zones, set at least 1 group lbg unit 9 in each lbg area, the alum gate line 2 passes through lbg area and P
Type silicon 5 is connected；Main grid 1 is vertical is connected with back of the body silver for the alum gate line 2.
The present invention is improved to existing one side PERC solar cells, is no longer provided with full aluminum back electric field, but by its
Become many alum gate lines 2, opened using laser is opened up in lbg technology overleaf silicon nitride film 3 and backside oxide aluminium film 4
Groove area, and alum gate line 2 is printed in the lbg area that these be arranged in parallel, it is close so as to form localized contact with P-type silicon 5
Collecting the alum gate line 2 of parallel arrangement can not only play raising open-circuit voltage Voc and short circuit current Jsc, reduce minority carrier recombination
Rate, improves the effect of cell photoelectric conversion efficiency, the full aluminum back electric field of alternative existing one side battery structure, and alum gate line 2
The back side of silicon chip is not covered comprehensively, sunshine can be projected in silicon chip between alum gate line 2, so as to realize that silicon chip back side absorbs
Luminous energy, greatly improves the photoelectric transformation efficiency of battery.
Preferably, the radical of the alum gate line 2 is corresponding with the number in lbg area, is all 30-500 bars, more preferably, institute
The radical for stating alum gate line 2 is 80-220 bars.The alum gate line 2 can be straight line, or shaped form, arc, waveform, folding
Linear etc., lbg area shape is corresponding with alum gate line 2, and embodiments thereof is not limited to illustrated embodiment of the present invention.
Silicon chip back side, alum gate line 2 and the back of the body perpendicular connection of silver-colored main grid 1 are illustrated in figure 2, wherein the silver-colored main grid 1 of the back of the body is continuous
Straight grid, because back side silicon nitride 3 and backside oxide aluminium film 4 are provided with lbg area, when printing aluminium paste forms alum gate line 2, aluminium
Slurry is filled to lbg area so that alum gate line 2 forms localized contact with P-type silicon 5, can be by electric transmission to alum gate line 2, with aluminium
The silver-colored main grid 1 of the intersecting back of the body of grid line 2 then collects the electronics on alum gate line 2, it follows that alum gate line 2 of the present invention plays raising
The effect of open-circuit voltage Voc and short circuit current Jsc, reduction minority carrier recombination rate, and transmission electronics, alternative existing list
Full aluminum back electric field in the solar cell of face, not only reduces the consumption of silver paste and aluminium paste, reduces production cost, and realize two-sided suction
Luminous energy is received, the range of application of solar cell is significantly expanded and is improved photoelectric transformation efficiency.
The silver-colored main grid 1 of the back of the body of the present invention can also set in addition to being illustrated in figure 2 the setting of continuous straight grid in space segmentation
Put, as shown in Figure 3.Can also be set in space segmentation, and be connected by connected region between each adjacent sectional, as shown in Figure 4.Even
Logical region can be the combination of several figures of triangle, quadrangle, pentagon, circle, arc or more, connected region at least 1
Individual, the width of connected region is 0.01-4.5mm.
It should be noted that when 2 groups or more than 2 groups lbg units 9 are set in each lbg area, each group swashs
Light slotted unit 9 be arranged in parallel, and the spacing between two adjacent groups lbg unit 9 is 5-480 μm.
Every group of lbg unit 9 includes at least one lbg unit 9, the pattern of lbg unit 9 for it is circular,
Ellipse, triangle, quadrangle, pentagon, hexagon, cross or star.
Further illustrated below by instantiation：
1. the pattern identical situation of the lbg unit 9 in each lbg area：
1.1 is identical with group lbg 9 patterns of unit
1.1.1 such as Fig. 5, each lbg area is provided with 1 group of lbg unit 9, and lbg unit 9 is that continuous strip is long
Square, the length of lbg unit 9 is identical with alum gate line length；Or the length of lbg unit 9 is shorter than alum gate line length
0.01-5mm；Or the length of lbg unit 9 0.01-5mm more long than alum gate line length.
1.1.2 such as Fig. 6, each lbg area is provided with 2 groups or more than 2 groups lbg units 9（Example is 3 in figure
Group）, each group lbg unit be arranged in parallel, and the spacing between two adjacent groups lbg unit is 5-480 μm.Lbg
Unit 9 is continuous strip rectangle, and the length of lbg unit 9 is identical with alum gate line length；Or lbg unit 9
Length 0.01-5mm shorter than alum gate line length；Or the length of lbg unit 9 0.01-5mm more long than alum gate line length.
1.1.3 such as Fig. 7, each lbg area is provided with 1 group of lbg unit 9, and lbg unit 9 prolongs along alum gate line
Direction compartment arrangement is stretched, can be circle, ellipse, triangle, quadrangle, pentagon, six with the pattern of group lbg unit 9
Side shape, cross or star, example is rectangle in figure.
1.1.4 such as Fig. 8, each lbg area is provided with 2 groups or more than 2 groups lbg units 9（Example is 3 in figure
Group）, each group lbg unit be arranged in parallel, and the spacing between two adjacent groups lbg unit is 5-480 μm.Lbg
Unit 9 is arranged by compartment, and the pattern of lbg unit 9 can be circle, ellipse, triangle, quadrangle, pentagon, six sides
Shape, cross or star, example is rectangle in figure.
1.2 differ with the pattern of group lbg unit 9
1.2.1 such as Fig. 9, each lbg area is provided with 1 group of lbg unit 9, and lbg unit 9 is arranged by compartment,
The pattern of lbg unit 9 can be circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross or star, swash
The pattern of light slotted unit 9 is incomplete same.
1.2.2 such as Figure 10, each lbg area is provided with 2 groups or more than 2 groups lbg units 9, lbg unit 9
Arranged along alum gate line bearing of trend compartment, the pattern of lbg unit 9 can be continuous line segment long, circle, ellipse, triangle
Shape, quadrangle, pentagon, hexagon, cross or star, the lbg unit 9 in difference group lbg unit 9 are arranged
Partly different or all different, example is all different situation of different groups of lbg units 9 in figure.
2. the incomplete same situation of the pattern of the lbg unit 9 in different lbg areas：
Take single lbg area in above-mentioned Fig. 5-Figure 10 to be combined, such as Figure 11, or except lbg unit 9 is continuous
Outside line segment situation long, different lbg areas are entered with one of which situation in 1.1.1-1.1.4 and 1.2.1-1.2.2 situations
The different arrangement of row.
It should be noted that the spacing distance under different situations between lbg area can be with identical above, also can be different.
It is 0.01-50mm with the spacing distance of the two neighboring lbg unit 9 of group lbg unit 9, with group lbg list
Spacing distance between unit 9 can be with identical, also can be different.
The width in lbg area of the present invention is 10-500 μm；The width of the alum gate line 2 below lbg area
More than the width in lbg area, the width of alum gate line 2 is 30-550 μm to degree.Bigger numerical is selected in the above-mentioned width of alum gate line 2
Such as 500 μm, and multigroup lbg area can be side by side located at same alum gate by the selection of lbg sector width compared with such as 40 μm of fractional value
On line 2, it is ensured that alum gate line 2 has enough contacts area with P-type silicon 5.
To sum up, p-type PERC double-sided solar batteries change of the present invention is provided with a plurality of alum gate line 2 be arrangeding in parallel, no
Full aluminum back electric field realizes back side extinction in only substituting existing one side solar cell, is additionally operable to carry on the back the secondary grid structure in silver electrode and uses
Make conduction electronics.P-type PERC double-sided solar batteries of the present invention are made, the consumption of silver paste and aluminium paste can be saved, reduce life
Cost is produced, and realizes two-sided absorption luminous energy, be significantly expanded the range of application of solar cell and improve photoelectric transformation efficiency.
Correspondingly, the present invention also provides the preparation method of p-type PERC double-sided solar batteries, comprises the following steps：
（1）Matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon.
From wet method or dry etching technology, matte is formed in silicon chip surface by etching device.
（2）It is diffused in front side of silicon wafer, forms N-type emitter stage.
The diffusion technique that preparation method of the present invention is used is that silicon chip is placed in thermal diffusion furnace to be diffused, in p-type
The top of silicon forms N-type emitter stage, should control temperature in the range of 800 DEG C -900 DEG C during diffusion, and target block resistance is
90-150 Europe/.
Phosphorosilicate glass layer can be formed in the front and back of silicon chip in diffusion process, phosphorosilicate glass layer is formed as
In diffusion process, POCl3With O2Reaction generation P2O5It is deposited on silicon chip surface.P2O5Generation SiO again is reacted with Si2And phosphorus atoms,
Thus one layer of SiO containing P elements is formed in silicon chip surface2, referred to as phosphorosilicate glass.The phosphorosilicate glass layer can be
The impurity in silicon chip is collected during diffusion, the impurity content of solar cell can be further reduced.
（3）Phosphorosilicate glass and periphery P N knots that removal diffusion process is formed, and silicon chip back side is polished.
It is 1 that the present invention will be placed in volume ratio through the silicon chip after diffusion:5 HF（Mass fraction 40%-50%）And HNO3（Quality
Fraction 60%-70%）15s removal phosphorosilicate glasses and periphery P N knots are soaked in mixed solution acid tank.The presence of phosphorosilicate glass layer is easy
Cause the aberration of PECVD and SixNyCome off, and in the phosphorosilicate glass layer containing substantial amounts of phosphorus and from silicon chip migrate
Impurity, it is therefore desirable to remove phosphorosilicate glass layer.
It should be noted that the step of being polished to silicon chip back side considers whether to carry out depending on actual conditions.
（4）In silicon chip back side deposited oxide aluminium film and silicon nitride film.
（5）In front side of silicon wafer silicon nitride film.
Above-mentioned pellumina and silicon nitride film deposition step can be set using conventional PECVD device, ALD equipment or APCVD
The standby silicon nitride film on silicon chip back side and front successively.It should be noted that step（4）And step（5）Order can be overturned
Exchange.
（6）To carrying out lbg on the silicon nitride film and pellumina of silicon chip back side.
Slotted on the silicon nitride film and pellumina of silicon chip back side using lbg technology, groove depth is until p-type
Silicon lower surface.Preferably, the width in the lbg area is 10-500 μm.
（7）In the silicon chip back side silver-colored main grid paste of the printing back of the body, drying.
The silver-colored main grid paste of the pattern printing back of the body according to the silver-colored main grid of the back of the body.The pattern of the silver-colored main grid of the back of the body is continuous straight grid；Or institute
The silver-colored main grid of the back of the body is stated to be set in space segmentation；Or the silver-colored main grid of the back of the body is set in space segmentation, and connected region is passed through between each adjacent sectional
Domain connects.
（8）Aluminium paste is printed in lbg area, is allowed to back of the body silver that main grid paste is vertical is connected.
Lbg area can be accurately positioned during printing alum gate line, method is simple, and positioning precision is high.
（9）Positive silver electrode paste is printed in front side of silicon wafer.
（10）High temperature sintering is carried out to silicon chip, the silver-colored main grid of the back of the body, alum gate line and positive silver electrode is formed.
Preferably, the width of alum gate line is 30-550 μm；The width of the silver-colored main grid of the back of the body is 0.5-5mm；The root of the alum gate line
Number is 30-500 bars；The radical of the silver-colored main grid of the back of the body is 2-8 bars.
（11）Anti- LID annealing is carried out to silicon chip, p-type PERC double-sided solar batteries are obtained.
Accordingly, invention additionally discloses a kind of p-type PERC double-sided solar battery components, including the two-sided sun of p-type PERC
Energy battery and encapsulating material, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.Specifically,
As an embodiment of p-type PERC double-sided solar battery components, height saturating safety glass, second that it is from top to bottom sequentially connected
Alkene-vinyl acetate copolymer eva, PERC solar cells, ethylene-vinyl acetate copolymer EVA and safety glass composition thoroughly high.
Accordingly, invention additionally discloses a kind of p-type PERC double-sided solar systems, including p-type PERC double-sided solars electricity
Pond, the PERC solar cells are any of the above-described p-type PERC double-sided solar batteries.As the one of PERC solar energy systems
Preferred embodiment, including PERC solar cells, batteries, charging-discharging controller inverter, AC power distribution cabinet/AC distribution panel and the sun with
Track control system.Wherein, PERC solar energy systems can be provided with batteries, charging-discharging controller inverter, it is also possible to not set
Batteries, charging-discharging controller inverter, those skilled in the art can be configured according to actual needs.
It should be noted that in PERC solar cell modules, PERC solar energy systems, except the two-sided sun of p-type PERC
Part outside energy battery, with reference to prior art design.
It is last to should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected
The limitation of scope is protected, although being explained in detail to the present invention with reference to preferred embodiment, one of ordinary skill in the art should
Understand, technical scheme can be modified or equivalent, without deviating from the essence of technical solution of the present invention
And scope.
Claims (10)
1. a kind of p-type PERC double-sided solar batteries, it is characterised in that including the silver-colored main grid of the back of the body, alum gate line, back side silicon nitride,
Backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；The back side silicon nitride, backside oxide
Aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode stack gradually connection from bottom to up；
The back side silicon nitride and backside oxide aluminium film are opened by forming the 30-500 laser be arrangeding in parallel after lbg
Groove area, sets at least 1 group lbg unit in each lbg area, the alum gate line passes through lbg area and P-type silicon
It is connected；Main grid is vertical is connected with back of the body silver for the alum gate line.
2. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that when setting 2 in each lbg area
When group or more than 2 groups lbg units, each group lbg unit be arranged in parallel, between two adjacent groups lbg unit
Spacing is 5-480 μm.
3. p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that every group of lbg unit is included extremely
Few 1 lbg unit, the pattern of lbg unit is circle, ellipse, triangle, quadrangle, pentagon, six sides
Shape, cross or star.
4. p-type PERC double-sided solar batteries as claimed in claim 3, it is characterised in that every group of lbg unit includes
Individual pattern is the rectangular lbg unit of strip.
5. p-type PERC double-sided solar batteries as claimed in claim 3, it is characterised in that with group lbg unit along alum gate
Line bearing of trend interval type configuration, the spacing distance of two neighboring lbg unit is 0.01-50mm.
6. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the width in the lbg area is
10-500μm；The width of alum gate line is 30-550 μm；The width of the silver-colored main grid of the back of the body is 0.5-5mm；The radical of the alum gate line is 30-
500；The radical of the silver-colored main grid of the back of the body is 2-8 bars.
7. p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the back of the body silver main grid is continuous straight grid；
Or the silver-colored main grid of the back of the body is set in space segmentation；Or the silver-colored main grid of the back of the body is set in space segmentation, by connecting between each adjacent sectional
Logical region connection.
8. a kind of preparation method of p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that including following
Step：
（1）Matte is formed in front side of silicon wafer and the back side, the silicon chip is P-type silicon；
（2）It is diffused in front side of silicon wafer, forms N-type emitter stage；
（3）Phosphorosilicate glass and periphery P N knots that removal diffusion process is formed, and silicon chip back side is polished；
（4）In silicon chip back side deposited oxide aluminium film and silicon nitride film；
（5）In front side of silicon wafer silicon nitride film；
（6）To carrying out lbg on the silicon nitride film and pellumina of silicon chip back side；
（7）In the silicon chip back side silver-colored main grid paste of the printing back of the body, drying；
（8）Aluminium paste is printed in lbg area, is allowed to back of the body silver that main grid paste is vertical is connected, dried；
（9）Positive silver electrode paste is printed in front side of silicon wafer；
（10）High temperature sintering is carried out to silicon chip, the silver-colored main grid of the back of the body, alum gate line and positive silver electrode is formed；
（11）Anti- LID annealing is carried out to silicon chip, p-type PERC double-sided solar batteries are obtained.
9. a kind of PERC solar cell modules, it is characterised in that including PERC solar cells and encapsulating material, its feature exists
In the PERC solar cells are the p-type PERC double-sided solar batteries described in claim any one of 1-7.
10. a kind of PERC solar energy systems, including PERC solar cells, it is characterised in that the PERC solar cells are
P-type PERC double-sided solar batteries described in claim any one of 1-7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710124068.4A CN106887477A (en) | 2017-03-03 | 2017-03-03 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| PCT/CN2017/087356 WO2018157493A1 (en) | 2017-03-03 | 2017-06-07 | P-type perc double-sided solar cell and preparation method therefor, and assembly and system thereof |
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|---|---|---|---|
| CN201710124068.4A CN106887477A (en) | 2017-03-03 | 2017-03-03 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
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| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN111668339A (en) * | 2020-04-23 | 2020-09-15 | 天津爱旭太阳能科技有限公司 | Solar cell front electrode alignment printing method and preparation method |
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