CN106887274A - A kind of flexible transparent conductive film and preparation method thereof - Google Patents
A kind of flexible transparent conductive film and preparation method thereof Download PDFInfo
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- CN106887274A CN106887274A CN201710178564.8A CN201710178564A CN106887274A CN 106887274 A CN106887274 A CN 106887274A CN 201710178564 A CN201710178564 A CN 201710178564A CN 106887274 A CN106887274 A CN 106887274A
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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Abstract
The embodiment of the invention discloses a kind of flexible transparent conductive film and preparation method thereof, the preparation method includes：One flexible substrate is provided；Nano material conductive layer is formed on flexible substrates；Inorganic protective layer is formed on nano material conductive layer, the composition material of inorganic protective layer is at least one broad stopband inorganic material, and the energy gap of broad stopband inorganic material is more than or equal to 3eV.Inorganic protective layer is covered on nano material conductive layer in the embodiment of the present invention; water oxygen can be intercepted to protect nano material conductive layer; also the stability and heat-resisting quantity of nano material conductive layer can be effectively improved, and then realize the high stability and excellent heat resistance of flexible transparent conductive film；And energy gap 3eV and the above inorganic material in visible region substantially without absorption, therefore the inorganic protective layer for being formed will not also cause the transmitance of nano material conductive layer that obvious decay occurs in visible-range (particularly in 380 500nm wave bands).
Description
Technical field
The present embodiments relate to semiconductor fabrication, more particularly to a kind of flexible transparent conductive film and its preparation side
Method.
Background technology
The transparent conductive film in the product such as available liquid crystal display, electroluminescent display and touch-screen is at present
It is leading with ITO (tin-doped indium oxide) transparent conductive film, ITO has good electric conductivity and transmitance, but ITO itself is solid
Some fragility, expensive deposition manufacture process and indium it is increasingly in short supply, limit applications of the ITO in field of flexible display.
Based on this, emerging flexible transparent conductive film such as CNT, Graphene, conducting polymer, metal grill with
And nano metal line progresses into the visual field of people, wherein, flexible transparent conductive film of greatest concern is based on nano-silver thread
(AgNW) transparent conductive film, AgNW films have excellent bending resistance, electric conductivity and high transmittance.
However, the heat resistance of AgNW films is poor, the film device for causing it to be applicable for use with high temperature process making
Part field, TFT devices are not suitable for such as；The problem of AgNW films also existence and stability difference, cause its be difficult to be widely used in it is soft
Property display field.
The content of the invention
The embodiment of the present invention provides a kind of flexible transparent conductive film and preparation method thereof, resistance to solve existing AgNW films
The problem of warm nature and stability difference.
In a first aspect, the embodiment of the invention provides a kind of preparation method of flexible transparent conductive film, the preparation method
Including：
One flexible substrate is provided；
Nano material conductive layer is formed in the flexible substrate；
Inorganic protective layer is formed on the nano material conductive layer, the composition material of the inorganic protective layer is at least one
Broad stopband inorganic material is planted, the energy gap of the broad stopband inorganic material is more than or equal to 3eV.
Further, the nano material conductive layer is carbon nanotube conducting layer, graphene conductive layer and nano metal line
Any one conductive layer in conductive layer.
Further, the nano metal line conductive layer is nano-silver thread conductive layer, nanometer aluminum steel conductive layer, gold nanowire
Any one conductive layer in conductive layer and NANO CRYSTAL COPPER WIRE conductive layer.
Further, the nano material conductive layer is formed in the flexible substrate using solution processing method, it is described molten
Liquid processing method is spin coating, spraying, transfer, blade coating, slot coated or inkjet printing.
Further, the thickness of the nano material conductive layer is 20nm~200nm.
Further, the broad stopband inorganic material is metal oxide or nitride or silicide.
Further, the broad stopband inorganic material is metal oxide；The composition material of the inorganic protective layer includes：
Any one in aluminum oxide, zinc oxide, titanium oxide, magnesia and zirconium oxide or combination.
Further, using vacuum deposition method, solution processing method or ink-jet printing process on the nano material conductive layer
Form the inorganic protective layer.
Further, the thickness of the inorganic protective layer is 5nm~200nm.
Second aspect, the embodiment of the present invention additionally provides a kind of flexible transparent conductive film, the flexible transparent conductive film
Including：
Flexible substrate；
Nano material conductive layer in the flexible substrate；
Inorganic protective layer on the nano material conductive layer, the composition material of the inorganic protective layer is at least one
Broad stopband inorganic material is planted, the energy gap of the broad stopband inorganic material is more than or equal to 3eV.
Flexible transparent conductive film provided in an embodiment of the present invention, forms inorganic protection on nano material conductive layer
Layer, inorganic protective layer is made up of at least one broad stopband inorganic material, and the energy gap of broad stopband inorganic material is more than or equal to
3eV.Inorganic protective layer is covered on nano material conductive layer in the embodiment of the present invention, can intercept water oxygen to protect nano material
Conductive layer, it is also possible to be effectively improved the stability and heat-resisting quantity of nano material conductive layer, and then realize that flexible and transparent conductive is thin
The high stability of film and excellent heat resistance, and energy gap is basic in visible region in the inorganic material of 3eV and the above
Without absorption, therefore the inorganic protective layer for being formed will not also cause the transmitance of nano material conductive layer (outstanding in visible-range
It is 380-500nm wave bands) there is serious decay.Obviously, AgNW films belong to one kind of nano material conductive layer, therefore this
Inventive embodiments can solve the problem that the problem of existing AgNW films temperature tolerance and stability difference, be applicable not only to the film of high temperature process
Device, is further widely applied to flexible display device.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will make needed for embodiment description
Accompanying drawing does one and simply introduces, it should be apparent that, drawings in the following description are some embodiments of the present invention, for this
For the those of ordinary skill of field, on the premise of not paying creative work, can also obtain other according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the flow chart of the preparation method of the flexible transparent conductive film that the embodiment of the present invention one is provided；
Fig. 2A is the performance schematic diagram of different flexible transparent conductive films；
Fig. 2 B are the transmitance schematic diagrames of different flexible transparent conductive films；
Fig. 3 is the schematic diagram of the flexible transparent conductive film that the embodiment of the present invention two is provided；
Fig. 4 is the processing procedure figure of the flexible transparent conductive film that the embodiment of the present invention two is provided.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, hereinafter with reference to the embodiment of the present invention in it is attached
Figure, technical scheme is clearly and completely described by implementation method, it is clear that described embodiment is the present invention one
Section Example, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
Go out the every other embodiment obtained under the premise of creative work, belong to the scope of protection of the invention.
The flow chart of the preparation method of the flexible transparent conductive film for being provided for the embodiment of the present invention one as shown in Figure 1, this
The technical scheme of embodiment is applied to the transparent conductive film for making flexible display device, is particularly suited for making flexible display
The transparent conductive film of part high temperature processing procedure thin-film device.
The preparation method of the flexible transparent conductive film that the present embodiment is provided, specifically includes following steps：
Step 110, one flexible substrate of offer.
Flexible substrate is the basis of flexible display device, and the display of full flexible can be made using flexible substrate material
Flexible transparent conductive film in part, therefore flexible display device is made based on flexible substrate.It is soft in the present invention
Property substrate be it is existing any one can apply the flexible substrate in flexible display device, such as plastic flexible substrate, metal
Paillon foil flexible substrate, ultra-thin glass flexible substrate, papery flexible substrate, biological laminated film flexible substrate etc..
Optional flexible substrate is plastic flexible substrate in the present embodiment, and specific optional flexible substrate is polyimides, gathers
It is ethylene glycol terephthalate, PEN, makrolon, polyether sulfone, polyacrylate, PEI, poly-
Acid amides or polyether-ether-ketone.Plastic flexible substrate possess the transparency, flexibility, light weight, it is durable, cheap the advantages of, with wide
Wealthy prospect, contributes to the growth and printing of organic luminescence polymer and active matrix thin film transistor array, it is adaptable to big rule
Molding makes flexible display device.
Step 120, on flexible substrates formation nano material conductive layer.
Current main flow flexible transparent conductive film ITO itself intrinsic fragility, expensive deposition manufacture process and indium are increasingly
It is in short supply, limit applications of the ITO in field of flexible display.Therefore it is conductive nano material to be formed on flexible substrates in the present embodiment
Layer, nano material conductive layer is transparency conducting layer.The making technology of nano material conductive layer is relatively easy and cost is not high, can replace
Turn into main flow transparency conducting layer for ITO.
Optional nano material conductive layer is in carbon nanotube conducting layer, graphene conductive layer and nano metal line conductive layer
Any one conductive layer.Optional nano metal line conductive layer is nano-silver thread conductive layer, nanometer aluminum steel conductive layer, gold nanowire are led
Any one conductive layer in electric layer and NANO CRYSTAL COPPER WIRE conductive layer.The bending resistance of nano material conductive layer, electric conductivity and printing opacity
Rate is high, and with less bending radius, in bending, resistance change rate is smaller, applies in the equipment with curved-surface display more
With advantage, for example, apply in intelligent watch, bracelet etc..It will be understood by those skilled in the art that nano material conductive layer includes
But above-mentioned example is not limited to, existing any one nanometer conductive material that can be applied to flexible transparent conductive film each falls within this
The protection domain of invention, will not be repeated here.
Optional use solution processing method forms nano material conductive layer, optional solution on flexible substrates in the present embodiment
Processing method is spin coating, spraying, transfer, blade coating, and slot coated or inkjet printing are imprinted.Optional nano material is led in the present embodiment
The thickness of electric layer is 20nm~200nm, if the thickness of nano material conductive layer is excessively thin, can influence leading for flexible transparent conductive film
Electrically, if the thickness of nano material conductive layer is excessively thin, the transmitance of flexible transparent conductive film can be influenceed.Those skilled in the art
It is appreciated that the preparation technology of nano material conductive layer includes but is not limited to solution processing method, and its thickness is also not necessarily limited to
Thickness range is stated, those skilled in the art can voluntarily choose preparation technology and setting thicknesses of layers according to needed for product,
Concrete restriction is not carried out in the present invention.
Step 130, inorganic protective layer is formed on nano material conductive layer, the composition material of inorganic protective layer is at least one
Broad stopband inorganic material is planted, the energy gap of broad stopband inorganic material is more than or equal to 3eV.
Formd on nano material conductive layer in the present embodiment by least one broad stopband inorganic material constitute it is inorganic
Protective layer, the energy gap of broad stopband inorganic material is more than or equal to 3eV, and inorganic protective layer is covered in nano material conductive layer
On, water oxygen can be intercepted to protect nano material conductive layer.The heat resistance and stability of nano material conductive layer are poor, cause existing
The heat resistance and stability of flexible transparent conductive film are poor, and the inorganic guarantor based on broad stopband inorganic material in the present embodiment
Sheath possesses excellent temperature tolerance and stability, then inorganic protective layer be covered on nano material conductive layer can be effectively improved it is soft
The stability and heat-resisting quantity of property transparent conductive film, and then realize the high stability of flexible transparent conductive film and excellent resistance to
Warm nature energy.
The composition material of inorganic protective layer is at least one broad stopband inorganic material, and energy gap is in 3eV and the above
Inorganic material can't influence after visible region is substantially without absorption, therefore inorganic protective layer covering nano material conductive layer
Nano material conductive layer will not also cause the transmitance of nano material conductive layer in visible light wave in the transmitance of visible light wave range
Section is particularly in 380-500nm wave band deep fades.
The flexible transparent conductive film that the present embodiment is provided, forms inorganic protective layer, nothing on nano material conductive layer
Machine protective layer is made up of at least one broad stopband inorganic material, and the energy gap of broad stopband inorganic material is more than or equal to 3eV.This
Inorganic protective layer is covered on nano material conductive layer in embodiment, can intercept water oxygen to protect nano material conductive layer,
The stability and heat-resisting quantity of nano material conductive layer can be effectively improved, and then realize the high stable of flexible transparent conductive film
Property and excellent heat resistance；And energy gap 3eV and the above inorganic material in visible region substantially without absorption, therefore
The inorganic protective layer of formation will not also cause the transmitance of nano material conductive layer (particularly 380- in visible-range
500nm wave bands) deep fades.Obviously, AgNW films belong to one kind of nano material conductive layer, therefore the present embodiment can solve the problem that
The problem of existing AgNW films temperature tolerance and stability difference, is applicable not only to the thin-film device of high temperature process, is further widely applied to
Flexible display device.
Exemplary, on the basis of above-mentioned technical proposal, optional broad stopband inorganic material is metal oxide or nitridation
Thing or silicide.Those skilled in the art will be seen that any one broad stopband inorganic material each falls within protection model of the invention
Enclose, will not be repeated here.Broad stopband inorganic material has excellent resistance to elevated temperatures and stability, is formed by wide-band gap material
The protection of inorganic protective layer can make the nano material conductive layer good conductive can be still kept under 350 DEG C of hot conditions
Performance, and excellent transmitance, inorganic protective layer can play a part of protection nano material conductive layer while will not also shadow
Ring the performance of nano material conductive layer.Additionally, energy gap is special in visible-range in the broad stopband inorganic material of 3eV and the above
Be not 380nm-500nm wave bands substantially without light absorbs, therefore the inorganic protective layer for being formed is in the same of protection nano material conductive layer
When can't influence the transmitance of flexible transparent conductive film.
Exemplary, on the basis of above-mentioned technical proposal, optional use vacuum deposition method, solution processing method or ink-jet are beaten
Print method forms inorganic protective layer on nano material conductive layer.Optional use solution processing method or ink-jet printing process form inorganic guarantor
During sheath, broad stopband inorganic material is the persursor material of available salting liquid processing, the composition material bag of such as inorganic protective layer
Magnesia or aluminum oxide are included, then when forming inorganic protective layer using solution processing method, the composition material of inorganic protective layer is four water
Magnesium acetate precursor solution (magnesia) or nine water aluminum nitrate precursor solutions etc. (aluminum oxide).In other alternative embodiments,
State according to broad stopband inorganic material is different, and also optional to form inorganic protective layer using other techniques, such as broad stopband is inorganic
Material is gas-phase depositing materials or broad stopband target, then can form inorganic on nano material conductive layer using vacuum deposition method
Protective layer, also optional use ald (ALD), plasma enhanced chemical vapor deposition (PECVD), physical vapour deposition (PVD)
And the film-forming process such as pulsed laser deposition (PLD) forms inorganic protective layer on nano material conductive layer (PVD).
Exemplary, on the basis of above-mentioned technical proposal, the thickness of optional inorganic protective layer is 5nm~200nm.Compare
For other thickness, inorganic protective layer of thickness can play obstruct water oxygen to protect nano material conductive in the range of this
(water oxygen transmitance WVTR is up to 10-3~10 for the effect of layer-5g/m2/ day), while not influenceing the conduction of nano material conductive layer
Performance.And if the thickness of inorganic protective layer it is excessively thin can lead to not play intercept water oxygen effect, do not have protecting effect, can lead
Nano material conductive layer is caused easily to be oxidized；And if the thickness of inorganic protective layer is blocked up can cause nano material conductive layer without conduction
Property, also result in transmitance decline.
Exemplary, optional broad stopband inorganic material is metal oxide；The composition material of inorganic protective layer includes：Oxidation
Any one in aluminium, zinc oxide, titanium oxide, magnesia and zirconium oxide or combination.Herein with the composition material of inorganic protective layer
Including zinc oxide and magnesia, as a example by nano material conductive layer is nano-silver thread conductive layer, to what is provided in the embodiment of the present invention
The performance of flexible transparent conductive film is described in detail.
The composition material of optional inorganic protective layer includes in the present embodiment：Zinc oxide (ZnO) and magnesia (MgO), adopt
Inorganic protective layer is formed with atomic layer deposition method.Can be obtained can by adjusting the ratio of ZnO and MgO in inorganic protective layer
See light region 380 to the different transmitance conductive films of 500nm, be specifically in the ratio of this ZnO and MgO in inorganic protective layer
Refer to the atomic layer deposition cycle number ratio of ZnO and MgO, it is clear that ratio can be carried out by adjusting the periodicity of ald
Control.
Such as inorganic protective layer is 10nmZMO (laminated material of ZnO and MgO), the atomic layer deposition cycle of ZnO and MgO
Number ratio is x:Y, i.e., according to x layer ZnO of deposition, y layer MgO of deposition, x layers of ZnO of deposition, deposit y layers of MgO ..., deposit x layers of ZnO,
Y layers of order of MgO of deposition carries out ald until forming the ZMO, wherein ZnO in the total number of plies of atomic layer of 10nm thickness successively
Total number of plies and MgO total number of plies ratio be x:y.It is x by the atomic layer deposition cycle number ratio of ZnO and MgO:The inorganic guarantor of y
Sheath is labeled as ZMO (x/y).
It is as shown in Figure 2 A the performance schematic diagram of different flexible transparent conductive films.ZnO is in this inorganic protective layer ZMO
The inorganic protective layer formed with MgO, the atomic layer deposition cycle number ratio that ZMO (x/y) is ZnO and MgO is x:y.
The nano material conductive layer of the first flexible transparent conductive film is nano-silver thread conductive layer AgNW, inorganic protective layer
It is 10nmZMO (1/1) i.e. that the atomic layer deposition cycle number ratio of ZnO and MgO is 1:1；The flexible and transparent conductive is found after test
Excellent conductive performance can be still kept under film 10nmZMO (1/1)/hot conditions of the AgNW more than 300 DEG C.
Second nano material conductive layer of flexible transparent conductive film is AgNW, and inorganic protective layer is 10nmZMO (5/
1), i.e. the atomic layer deposition cycle number ratio of ZnO and MgO is 5:1；Flexible transparent conductive film 10nmZMO is found after test
(5/1)/AgNW can still keep excellent conductive performance under the hot conditions more than 300 DEG C.
The nano material conductive layer of the third flexible transparent conductive film is AgNW, without inorganic protective layer, after test
It was found that having square resistance very high, electric conductivity under hot conditions of the flexible transparent conductive film more than 200 DEG C
It is deteriorated.
From Fig. 2A, inorganic protective layer can play a part of protection nano material conductive layer and be received while not interfering with also
The performance of rice materials conductive layer.
It is as shown in Figure 2 B the transmitance schematic diagram of the flexible transparent conductive film with inorganic protective layer, mainly illustrates
The transmitance of different flexible transparent conductive films in the visible light wave range of 380nm-500nm.It is in this inorganic protective layer ZMO
The inorganic protective layer that ZnO and MgO is formed, the atomic layer deposition cycle number ratio that ZMO (x/y) is ZnO and MgO is x:y.
The nano material conductive layer of the first flexible transparent conductive film is nano-silver thread conductive layer AgNW, inorganic protective layer
It is 10nmZMO (1/1) i.e. that the atomic layer deposition cycle number ratio of ZnO and MgO is 1:1；The flexible and transparent conductive is found after test
Film 10nmZMO (1/1)/mean transmissivities of the AgNW in the visible light wave range of 380nm-500nm is 86.3%.
Second nano material conductive layer of flexible transparent conductive film is AgNW, and inorganic protective layer is 10nmZMO (5/
1), i.e. the atomic layer deposition cycle number ratio of ZnO and MgO is 5:1；Flexible transparent conductive film 10nmZMO is found after test
(5/1) the mean transmissivities of/AgNW in the visible light wave range of 380nm-500nm is 82.3%.
The nano material conductive layer of the third flexible transparent conductive film is AgNW, and inorganic protective layer is 10nmAZO (1/
20), i.e. aluminium oxide Al2O3It is 1 with the atomic layer deposition cycle number ratio of ZnO:20；Find that the flexible and transparent conductive is thin after test
Mean transmissivities 77.5% of film 10nmAZO (the 1/20)/AgNW in the visible light wave range of 380nm-500nm.
Obvious inorganic protective layer will not cause the transmitance of nano material conductive layer in visible light wave range deep fades.Its
In, the transmitance of 10nmZMO (1/1)/AgNW and 10nmZMO (5/1)/AgNW is better than 10nmAZO (1/20)/AgNW, has
5%-9% is significantly improved, and the composition material of preferred inorganic protective layer includes zinc oxide and magnesia in the present embodiment.
As shown in figure 3, being a kind of flexible transparent conductive film of the offer of the embodiment of the present invention two, the flexible and transparent conductive is thin
Film is made using the preparation method described in above-mentioned any embodiment.The flexible transparent conductive film bag that the present embodiment is provided
Include：Flexible substrate 210；Nano material conductive layer 220 in flexible substrate 210；On nano material conductive layer 220
Inorganic protective layer 230, the composition material of inorganic protective layer 230 is at least one broad stopband inorganic material, broad stopband inorganic material
Energy gap be more than or equal to 3eV.It will be understood by those skilled in the art that receiving in flexible transparent conductive film in the present invention
Rice materials conductive layer includes but is not limited to carbon nanotube conducting layer, graphene conductive layer and nano metal line conductive layer, can be with
It is the metal grill conductive layer using the manufacture of metal grill technology, or other flexible and transparent conductives layer, such as conducting polymer
Conductive layer, does not carry out concrete restriction in the present invention.
It should be noted that the flexible transparent conductive film 200 that the present embodiment is provided as shown in Figure 4 can be in rigid substrates
Manufactured on 240, then sequentially form flexible substrate 210, nano material conductive layer 220 and inorganic protective layer 230, finally will rigidity
Substrate 240 separates to obtain required flexible transparent conductive film 200 with flexible transparent conductive film 200.Optional rigid substrates
240 is glass substrate, silicon chip or metal substrate.
It will be understood by those skilled in the art that the structure of flexible transparent conductive film of the present invention is included but is not limited to
Said structure, is such as additionally provided with adhesive layer between flexible substrate and nano material conductive layer, and flexible and transparent conductive is thin
The preparation technology of film is including but not limited to described above.Flexible transparent conductive film of the present invention has based on broad stopband material
The inorganic protective layer of material, can intercept water oxygen to protect nano material conductive layer, improve the high temperature resistant of flexible transparent conductive film
Performance, stability and transmitance.
The embodiment of the present invention additionally provides a kind of flexible apparatus, and the flexible apparatus have soft described in as above any embodiment
Property transparent conductive film, the flexible transparent conductive film as flexible apparatus transparency electrode, with excellent resistance to elevated temperatures,
Stability and transmitance.The flexible apparatus optional in the present embodiment are thin-film device or flexible display device.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although the present invention is carried out by above example
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
More other Equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. a kind of preparation method of flexible transparent conductive film, it is characterised in that including：
One flexible substrate is provided；
Nano material conductive layer is formed in the flexible substrate；
Inorganic protective layer is formed on the nano material conductive layer, the composition material of the inorganic protective layer is at least one wide
Forbidden band inorganic material, the energy gap of the broad stopband inorganic material is more than or equal to 3eV.
2. preparation method according to claim 1, it is characterised in that the nano material conductive layer is carbon nanotube conducting
Any one conductive layer in layer, graphene conductive layer and nano metal line conductive layer.
3. preparation method according to claim 2, it is characterised in that the nano metal line conductive layer is led for nano-silver thread
Any one conductive layer in electric layer, nanometer aluminum steel conductive layer, gold nanowire conductive layer and NANO CRYSTAL COPPER WIRE conductive layer.
4. preparation method according to claim 1, it is characterised in that use solution processing method shape in the flexible substrate
Into the nano material conductive layer, the solution processing method is spin coating, spraying, transfer, blade coating, slot coated or inkjet printing.
5. preparation method according to claim 1, it is characterised in that the thickness of the nano material conductive layer be 20nm~
200nm。
6. preparation method according to claim 1, it is characterised in that the broad stopband inorganic material be metal oxide,
Or nitride or silicide.
7. preparation method according to claim 6, it is characterised in that the broad stopband inorganic material is metal oxide；
The composition material of the inorganic protective layer includes：Any one in aluminum oxide, zinc oxide, titanium oxide, magnesia and zirconium oxide
Or combination.
8. preparation method according to claim 1, it is characterised in that using vacuum deposition method, solution processing method or ink-jet
Impact system forms the inorganic protective layer on the nano material conductive layer.
9. preparation method according to claim 1, it is characterised in that the thickness of the inorganic protective layer be 5nm~
200nm。
10. a kind of flexible transparent conductive film, it is characterised in that including：
Flexible substrate；
Nano material conductive layer in the flexible substrate；
Inorganic protective layer on the nano material conductive layer, the composition material of the inorganic protective layer is at least one wide
Forbidden band inorganic material, the energy gap of the broad stopband inorganic material is more than or equal to 3eV.
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| CN108193179A (en) * | 2017-12-28 | 2018-06-22 | 吉林大学 | A kind of multi-layered infrared transparent conductive film and preparation method thereof |
| CN112103009A (en) * | 2020-09-02 | 2020-12-18 | 南昌欧菲显示科技有限公司 | Conductive film, preparation method thereof and product with conductive film |
| CN112927839A (en) * | 2021-01-26 | 2021-06-08 | 四川羽玺新材料股份有限公司 | Flexible nano-silver conductive film and preparation method and application thereof |
| CN114023496A (en) * | 2021-11-06 | 2022-02-08 | 厦门鑫铭科技股份有限公司 | Flexible color conductive display film and preparation method thereof |
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