CN106872142A - The measuring method of image retention after a kind of cmos image sensor proton irradiation - Google Patents

The measuring method of image retention after a kind of cmos image sensor proton irradiation Download PDF

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Publication number
CN106872142A
CN106872142A CN201710058863.8A CN201710058863A CN106872142A CN 106872142 A CN106872142 A CN 106872142A CN 201710058863 A CN201710058863 A CN 201710058863A CN 106872142 A CN106872142 A CN 106872142A
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image sensor
cmos image
gray value
integration
proton irradiation
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CN106872142B (en
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薛院院
王祖军
刘静
姚志斌
何宝平
郭红霞
陈伟
刘敏波
盛江坤
马武英
金军山
董观涛
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Northwest Institute of Nuclear Technology
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Northwest Institute of Nuclear Technology
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for

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  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Image Analysis (AREA)

Abstract

The invention discloses a kind of measuring method of image retention after cmos image sensor proton irradiation.Temperature control has been carried out using temperature control box, the accurate measurement of image retention after cmos image sensor proton irradiation has been realized;By the calculating of the i-th frame (i is 1,2,3 ... M) image using the method that multiple series of images is averaged is taken, the random error caused by single measurement can be excluded;By removing part abnormal image when calculating, the certainty of measurement of image retention after cmos image sensor proton irradiation is improve.The present invention has the advantages that good stability, measuring accuracy are high and measuring method is easy, is applicable to the accurate measurement of cmos image sensor image retention after proton irradiation, for the radiation injury assessment of cmos image sensor provides technical support.

Description

The measuring method of image retention after a kind of cmos image sensor proton irradiation
Technical field
The present invention relates to radiation effect technical field of measurement and test, and in particular to after a kind of cmos image sensor proton irradiation The measuring method of image retention.
Background technology
Complementary metal oxide semiconductors (CMOS) (Complementary Metal Oxide Semiconductor, CMOS) figure As sensor has the advantages that small volume, light weight, low in energy consumption, integrated level are high, it is widely used in star sensor, the sun sensitive The space fields such as device, remotely sensed image, in star identification, star tracking, attitude determination, space articulation, signature tracking, Landing Control Be played an important role in the space tasks such as landing imaging and target following.However, when on cmos image sensor is applied to Spacial Proton irradiation damage will be subject to when stating field, causes the even disabler of cmos image sensor performance degradation.Therefore Carry out the damage research of cmos image sensor proton irradiation to have great importance.
Image retention is one of important indicator of cmos image sensor institute collection image quality, and it characterizes this two field picture Whether a parameter of previous frame LCD image traces is left, is the important ginseng of cmos image sensor proton irradiation degree of injury assessment Number.
After proton irradiation, cmos image sensor imaging results are very sensitive to environment temperature.Traditional measurement cmos image Sensor image be detained system often ignore temperature factor, cause irradiation after cmos image sensor image retention test because For variation of ambient temperature causes uncertainty to increase, in some instances it may even be possible to occur causing the changing value of image retention big due to temperature fluctuation The degradation values of image retention are induced in irradiation.Cmos image sensor is likely to occur random Code Signal after proton irradiation, leads Uncertainty of measurement increase is caused even mistake occur.Additionally, after proton irradiation, cmos image sensor continuous acquisition multiple image When, former frames are likely to occur the larger problem of gray value, lead to not accurately survey cmos image sensor image retention Amount, has had a strong impact on the accuracy of cmos image sensor irradiation damage assessment.
The content of the invention
Deficiency of the present invention for above prior art, it is proposed that cmos image sensor figure after one kind measurement proton irradiation Method as being detained.
Technical scheme is as follows:
The measuring method of image retention, mainly includes the following steps that after the cmos image sensor proton irradiation:
1) cmos image sensor after proton irradiation is placed in camera bellows, camera bellows is in isoperibol, is set inside camera bellows Light source is put for the Uniform Irradiation cmos image sensor when test needs;
2) setting is in the n time of integration of arithmetic progression, n >=10, each time of integration continuous acquisition M two field pictures, M >=20 And be even number, and light source only is opened in the M/2 image frame grabber times, cmos image sensor is in uniform illumination environment; And during other image frame grabbers, light source does not light, cmos image sensor is in details in a play not acted out on stage, but told through dialogues environment;
3) for each time of integration, the average gray value per two field picture is calculated respectively;Judge that wherein M/2 frames are averagely grey Whether angle value is consistent with 50% saturation gray value (in the error range for allowing):If it is, with the corresponding product of M/2 frames As the test time of integration between timesharing;If it is not, then adjusting the difference and/or initial value of the arithmetic progression, step is performed again 2), step 3), until M/2 frames average gray value is consistent with 50% saturation gray value, finally determine the test time of integration;
4) under the identified test time of integration, continuous acquisition M two field pictures, and beaten in the M/2 image frame grabber times Open the light source, cmos image sensor is in uniform illumination environment;And during other image frame grabbers, light source is not sent out Light, cmos image sensor is in details in a play not acted out on stage, but told through dialogues environment;
5) average gray value per two field picture is calculated, M frames and M+1 two field pictures is removed and is contrasted according to result of calculation The abnormal image of determination, the average for calculating remaining two field picture average gray value, are designated as X1;M two field picture average gray values are designated as X2, M+1 two field picture average gray values are designated as X3
6) the image retention I of the cmos image sensor is calculated according to the following formulag:
Above-mentioned steps 4) can be with duplicate measurements multi-group data, step 5) calculate each group of data in per two field picture average gray Value, then corresponding 1st frame of each group, the 2nd frame ... M two field pictures average gray value are averaged respectively, tied in this, as calculating Really, M frames and M+1 two field pictures and the abnormal image according to result of calculation contrast determination are then removed, remaining frame figure is calculated The average of picture.
Above-mentioned cmos image sensor can be arranged in test evaluation board, be collectively disposed in camera bellows;Test evaluation board and meter Calculation machine is connected, and evaluation board is tested using computer controls, realizes cmos image sensor IMAQ under the different times of integration And light source luminescent time control function.
Continuous several frames before typically.
The present invention has the advantages that good stability, measuring accuracy are high and measuring method is easy compared to existing technology, specifically Effect is as follows:
When the 1st, continuously exporting multiple image for cmos image sensor after proton irradiation, former two field picture sensors are secretly believed Number increase, cause certainty of measurement decline in addition occur mistake problem, using exclude remove part abnormal image method, improve The certainty of measurement of image retention after cmos image sensor proton irradiation.
2nd, the image retention of cmos image sensor is more sensitive to temperature after proton irradiation, causes image retention after irradiation Cannot accurately measure.The present invention is controlled test environment temperature using attemperating unit, is excluded because temperature change is to spoke According to the influence of rear cmos image sensor image retention test result.
3rd, for cmos image sensor after proton irradiation it is possible that random Code Signal, causes individual images to occur The problem of dark signal increase, using the method that multiple series of images is averaged is taken, eliminates the random error caused by single measurement.
Brief description of the drawings
Fig. 1, cmos image sensor image retention test system block diagram;
Fig. 2, cmos image sensor image retention test flow chart;
After Fig. 3, proton irradiation, cmos image sensor image retention schematic diagram;
Fig. 4, cmos image sensor image retention with proton fluence change curve.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings:Present embodiments provide a cmos image sensor matter After son irradiation, the method for testing of image retention.Cmos image sensor is 3MeV, matter by the energy of irradiation proton in the present embodiment Sub- fluence is respectively 1.0 × 1010p/cm2, 5.0 × 1010p/cm2, 1.0 × 1011p/cm2.Sample after proton irradiation is in CMOS Test image is detained on imageing sensor irradiation effect parameter test system, and test result is as shown in Figure 4.
As shown in Figure 1, test system includes uniform source of light, survey to the image retention test system block diagram of cmos image sensor Examination evaluation board, camera bellows, temperature control box and computer etc., wherein uniform source of light to provide uniform illumination condition when test image is detained, For measured device is powered and provides the conditions of work such as driver' s timing and driving frequency, camera bellows is device detection mistake to test evaluation board Details in a play not acted out on stage, but told through dialogues environment is provided in journey, to provide isoperibol in device test procedures, computer is by controlling test evaluation board for temperature control box Realize cmos image sensor IMAQ, image data storage and treatment.
With reference to Fig. 2, the method for testing of present invention measurement cmos image sensor image retention comprises the following steps:
Step one, the cmos image sensor after proton irradiation is arranged in test evaluation board, and placed them in In camera bellows, cmos image sensor is set to be in no light environment.
Step 2, uniform source of light is fixed on camera bellows inwall directly over cmos image sensor, is provided when test needs Uniform illumination.
Step 3, camera bellows is placed in temperature control box, is 25 DEG C by temperature control box temperature setting.
Step 4, will test evaluation board be connected with computer, by computer controls test evaluation board, realize do not equally have Lower cmos image sensor IMAQ and light source luminescent time control function between timesharing.
Step 5,10 time of integration (t being spacedly distributed of selection1、t2…t10).The initial value and difference of time of integration ordered series of numbers The distance between the setting (adjustment) of value and the intensity of light source, light source and cmos image sensor and cmos image sensor are most made public The factors such as light time are related.Each two field picture of time of integration continuous acquisition 20, and in the 10th image frame grabber time inner light source hair Light, cmos image sensor is in uniform illumination environment.During other 19 image frame grabbers, light source does not light, CMOS Imageing sensor is in no light environment.
Step 6, the average gray value for calculating every two field picture, judge whether wherein the 10th frame average gray value is 50% full And gray value:If it is, using the 10th frame corresponding time of integration as test the time of integration;If it is not, then adjustment integration Time, until the 10th frame average gray value is equal to 50% saturation gray value, as the test time of integration.
Step 7, under the selected test time of integration (1.243ms), the two field picture of continuous acquisition 20, and in the 10th frame Image acquisition time inner light source lights, and cmos image sensor is in uniform illumination environment.In the mistake of other 19 image frame grabbers Cheng Zhong, light source does not light, and cmos image sensor is in no light environment.Duplicate measurements multi-group data (is below with 20 groups Example).
Step 8, calculate in every group of data per two field picture average gray value, and by corresponding 1st frame of each group, the 2nd frame ... the 20 two field picture average gray values are averaged (x respectively1、x2…x20), i.e. x1 is the 1st two field picture average gray in all groups of data The average value of value, x2 is the average value ... of the 2nd two field picture average gray value in all groups of data.Result of calculation is as shown in Figure 3.
Step 9, the average for calculating the 1st frame (abnormal image) of removing, the 10th frame and the 11st two field picture average gray value, note It is X1.10th two field picture average gray value is X2, the 11st two field picture average gray value is designated as X3
Step 10, according to X1、X2And X3Calculate the image retention I of the cmos image sensorg:

Claims (3)

1. after a kind of cmos image sensor proton irradiation image retention measuring method, it is characterised in that comprise the following steps:
1) cmos image sensor after proton irradiation is placed in camera bellows, camera bellows is in isoperibol, camera bellows inside sets light Source is used for the Uniform Irradiation cmos image sensor when test needs;
2) setting in arithmetic progression the n time of integration, n >=10, each time of integration continuous acquisition M two field pictures M >=20 and are Even number, and light source only is opened in the M/2 image frame grabber times, cmos image sensor is in uniform illumination environment;And During other image frame grabbers, light source does not light, and cmos image sensor is in details in a play not acted out on stage, but told through dialogues environment;
3) for each time of integration, the average gray value per two field picture is calculated respectively;Judge wherein M/2 frames average gray value It is whether consistent with 50% saturation gray value:If it is, using the M/2 frames corresponding time of integration as test the time of integration; If it is not, then adjust the difference and/or initial value of the arithmetic progression, step 2 is performed again), step 3), until M/2 frames are flat Equal gray value is consistent with 50% saturation gray value, finally determines the test time of integration;
4) under the identified test time of integration, continuous acquisition M two field pictures, and open light in the M/2 image frame grabber times Source, makes cmos image sensor be in uniform illumination environment;And during other image frame grabbers, light source does not light, Cmos image sensor is in details in a play not acted out on stage, but told through dialogues environment;
5) average gray value per two field picture is calculated, M frames and M+1 two field pictures is removed and determination is contrasted according to result of calculation Abnormal image, calculate the average of remaining two field picture average gray value, be designated as X1;M two field picture average gray values are designated as X2, M + 1 two field picture average gray value is designated as X3
6) the image retention I of the cmos image sensor is calculated according to the following formulag:
I g = X 2 - X 1 X 3 - X 1 × 100 ( % ) .
2. after cmos image sensor proton irradiation according to claim 1 image retention measuring method, its feature exists In:Step 4) duplicate measurements multi-group data, step 5) average gray value per two field picture in each group of data is calculated, then by each group pair The 1st frame answered, the 2nd frame ... M two field pictures average gray value are averaged respectively, in this, as result of calculation, then remove M Frame and M+1 two field pictures and the abnormal image according to result of calculation contrast determination, the average for calculating remaining two field picture.
3. after cmos image sensor proton irradiation according to claim 1 image retention measuring method, its feature exists In:The cmos image sensor is arranged in test evaluation board, is collectively disposed in camera bellows;Test evaluation board is connected with computer Connect, evaluation board is tested using computer controls, realize cmos image sensor IMAQ and light source hair under the different times of integration Light time control function.
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