CN106866132A - 一种用于照明或显示的荧光陶瓷及其制备方法 - Google Patents
一种用于照明或显示的荧光陶瓷及其制备方法 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000005286 illumination Methods 0.000 title abstract description 6
- 238000000498 ball milling Methods 0.000 claims abstract description 57
- 239000000843 powder Substances 0.000 claims abstract description 36
- 229910000323 aluminium silicate Inorganic materials 0.000 claims abstract description 28
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000001354 calcination Methods 0.000 claims abstract description 26
- 238000003825 pressing Methods 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 13
- 238000003837 high-temperature calcination Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 49
- 239000002994 raw material Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 16
- 229910010293 ceramic material Inorganic materials 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 9
- 229910052906 cristobalite Inorganic materials 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052682 stishovite Inorganic materials 0.000 claims description 9
- 229910052905 tridymite Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000005056 compaction Methods 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 238000000695 excitation spectrum Methods 0.000 claims description 4
- 238000000295 emission spectrum Methods 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012752 auxiliary agent Substances 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 7
- 230000005284 excitation Effects 0.000 abstract description 3
- 238000009694 cold isostatic pressing Methods 0.000 abstract 1
- 238000001513 hot isostatic pressing Methods 0.000 abstract 1
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 10
- 229910000019 calcium carbonate Inorganic materials 0.000 description 5
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000013019 agitation Methods 0.000 description 3
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- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
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- 239000011347 resin Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 239000001095 magnesium carbonate Substances 0.000 description 1
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
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- 238000007639 printing Methods 0.000 description 1
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Abstract
本发明公开了一种用于照明或显示的荧光陶瓷及其制备方法,所述的荧光陶瓷包括陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉。所述铝硅酸盐荧光粉化学式为(Ca1‑xMx)1‑y‑zAl2Si2O8:yEu2+,zR,元素M为Mg,Sr,Ba中的一种,R为Ce3+,Mn4+,Dy3+,Tb3+中的一种,其中x,y,z为摩尔系数,范围0.01<x<1,0.2≤y≤0.7,0≤z≤0.6,y+z<1,制备荧光陶瓷主要通过高温煅烧工艺,具体步骤包括:球磨,球磨结束后,进行干压成型、冷等静压成型、真空煅烧、热等静压煅烧和退火处理。本发明制备的荧光陶瓷,具有高的激发与发射效率,物化性质稳定,适合高能量密度光连续激发使用,在照明或显示领域有较好的应用前景。
Description
技术领域
本发明涉及一种用于照明或显示的荧光陶瓷,并提供了该荧光陶瓷的制备方法,属于发光材料领域。
背景技术
白光LED由于具有光效高、寿命长、节能环保、安全可靠等优点,目前在照明、显示等领域逐渐逐渐占据市场份额。实现白光LED的主要形式是半导体芯片激发荧光粉材料,具体的工艺为将荧光粉材料与有机树脂材料(如有机硅树脂、环氧树脂等)混合脱泡后,点涂到半导体芯片的表面,再经过固化成型后,即可制得白光LED。这种形式工艺简单,成本低,但是也存在诸多不可解决的问题,随着半导体芯片功率能量密度的增加,单位面积出射光能量升高,如激光的激射时,传统这种形式中的荧光粉的光衰减非常严重,同时有机树脂材料作为一种高分子材料,在长期的高能量、高温环境下分子链将会发生解聚,产生黄化现象,导致发光效率的下降,因此制备出物化性质稳定,耐高能量密度光连续激发使用的荧光材料,是实现超大功率白光LED照明或显示的关键环节。
发明内容
为解决上述技术问题,本发明提供一种用于照明或显示的荧光陶瓷,该荧光陶瓷由陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉通过高温烧结工艺制备而成;制备的荧光陶瓷,具有高的激发与发射效率,物化性质稳定,适合高能量密度光连续激发使用,在照明或显示领域有较好的应用前景。
所述的铝硅酸盐荧光粉化学式为(Ca1-xMx)1-y-zAl2Si2O8:yEu2+,zR,元素M为Mg,Sr,Ba中的一种,R为Ce3+,Mn4+,Dy3+,Tb3+中的一种,其中x,y,z为摩尔系数,范围0.01<x<1,0.2≤y≤0.7,0≤z≤0.6,y+z<1,激发光谱范围250-480nm,发射光谱范围400-700nm;
所述的陶瓷原料粉体为MgAl2O4、Y2O3、MgAlON和AlN中的至少一种;
所述的烧结助剂为MgO、SiO2、TiO2和CaO中的至少一种;
所述的荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别为:70-90%、0.5-8%和2-29.5%;
本发明还提供上述荧光陶瓷的制备方法,具体步骤为:
A.硅铝酸盐荧光粉的制备:按照化学式(Ca1-xMx)1-y-zAl2Si2O8:yEu2+,zR中各元素的比例,称取元素M的碳酸盐、CaCO3、Al2O3、SiO2、Eu2O3和元素R的氧化物作为原料,将称取的原料混合均匀,进行球磨,球磨时间为3-4小时,球磨速度100-130转/分钟;球磨结束后,将原料装入坩埚中,在高温固相炉还原气氛中进行高温煅烧,温度为1050-1450℃,时间为8-12小时,煅烧结束后,将高温固相炉温度降至室温时,打开炉膛,取出材料,粉碎过筛,即可制备所需的铝硅酸盐荧光粉;
B.荧光陶瓷的制备:按照荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别称取材料,加入球磨罐中进行球磨,球磨时间为5-20小时,球磨速度200-300转/分钟,球磨结束后,将材料进行干压成型,压力为80-150MPa,保压时间5-15分钟,干压结束后进行冷等静压成型,压力为200-400MPa,保压时间5-10分钟,冷等静压结束后,将材料进行真空煅烧,温度为1500-1750℃,时间为7-13小时,真空度10-1-10-4Pa,真空煅烧结束后进行热等静压煅烧,温度为1600-1700℃,时间为2-8小时,压力为150-200MPa,最后进行退火处理,温度为700-1000℃,时间为8-12小时,随后冷却至室温,即可制备所需的荧光陶瓷;
在上述方法中,所述的还原气氛由活性炭或者N2/H2提供。
有益效果:
1、本发明涉及的荧光陶瓷具有宽谱激发与发射,激发光谱范围250-480nm,发射光谱范围400-700nm;
2、本发明涉及的荧光陶瓷物化性质稳定,适合高能量密度光连续激发使用。
附图说明
图1是具体实施例1中制备的荧光陶瓷样品的激发和发射光谱
具体实施方式
结合实施案例对本发明做进一步详细说明,但本发明保护范围不限于所述内容。
实施例1:
A.硅铝酸盐荧光粉的制备:按照化学式(Ca0.3Mg0.7)0.8Al2Si2O8:0.2Eu2+中各元素的比例,称取MgCO3、CaCO3、Al2O3、SiO2和Eu2O3作为原料,将称取的原料混合均匀,进行球磨,球磨时间为3小时,球磨速度120转/分钟;球磨结束后,将原料装入坩埚中,在高温固相炉活性炭所形成的还原气氛中进行高温煅烧,温度为1250℃,时间为8.5小时,煅烧结束后,将高温固相炉温度降至室温时,打开炉膛,取出材料,粉碎过筛,即可制备所需的铝硅酸盐荧光粉;
B.荧光陶瓷的制备:按照荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别为75%、3%和22%称取材料,加入球磨罐中进行球磨,球磨时间为13小时,球磨速度240转/分钟,球磨结束后,将材料进行干压成型,压力为100MPa,保压时间10分钟,干压结束后进行冷等静压成型,压力为270MPa,保压时间8分钟,冷等静压结束后,将材料进行真空煅烧,温度为1600℃,时间为8小时,真空度10-3Pa,真空煅烧结束后进行热等静压煅烧,温度为1690℃,时间为3小时,压力为180MPa,最后进行退火处理,温度为850℃,时间为9小时,随后冷却至室温,即可制备所需的荧光陶瓷;
实施例2:
A.硅铝酸盐荧光粉的制备:按照化学式(Ca0.4Sr0.6)0.5Al2Si2O8:0.4Eu2+,0.1Ce3+中各元素的比例,称取SrCO3、CaCO3、Al2O3、SiO2、Eu2O3和CeO2作为原料,将称取的原料混合均匀,进行球磨,球磨时间为3.5小时,球磨速度120转/分钟;球磨结束后,将原料装入坩埚中,在高温固相炉活性炭所形成的还原气氛中进行高温煅烧,温度为1150℃,时间为9.5小时,煅烧结束后,将高温固相炉温度降至室温时,打开炉膛,取出材料,粉碎过筛,即可制备所需的铝硅酸盐荧光粉;
B.荧光陶瓷的制备:按照荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别为80%、2%和18%称取材料,加入球磨罐中进行球磨,球磨时间为12小时,球磨速度245转/分钟,球磨结束后,将材料进行干压成型,压力为110MPa,保压时间6分钟,干压结束后进行冷等静压成型,压力为300MPa,保压时间8分钟,冷等静压结束后,将材料进行真空煅烧,温度为1650℃,时间为8.5小时,真空度10-1Pa,真空煅烧结束后进行热等静压煅烧,温度为1650℃,时间为5小时,压力为150MPa,最后进行退火处理,温度为7900℃,时间为10小时,随后冷却至室温,即可制备所需的荧光陶瓷;
实施例3:
A.硅铝酸盐荧光粉的制备:按照化学式(Ca0.9Sr0.1)0.3Al2Si2O8:0.25Eu2+,0.45Ce3+中各元素的比例,称取SrCO3、CaCO3、Al2O3、SiO2、Eu2O3和CeO2作为原料,将称取的原料混合均匀,进行球磨,球磨时间为3.5小时,球磨速度120转/分钟;球磨结束后,将原料装入坩埚中,在高温固相炉炉N2/H2所形成的还原气氛中进行高温煅烧,温度为1350℃,时间为8小时,煅烧结束后,将高温固相炉温度降至室温时,打开炉膛,取出材料,粉碎过筛,即可制备所需的铝硅酸盐荧光粉;
B.荧光陶瓷的制备:按照荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别为90%、0.5%和9.5%称取材料,加入球磨罐中进行球磨,球磨时间为5小时,球磨速度300转/分钟,球磨结束后,将材料进行干压成型,压力为80MPa,保压时间13分钟,干压结束后进行冷等静压成型,压力为280MPa,保压时间7分钟,冷等静压结束后,将材料进行真空煅烧,温度为1700℃,时间为8小时,真空度10-4Pa,真空煅烧结束后进行热等静压煅烧,温度为1680℃,时间为3小时,压力为180MPa,最后进行退火处理,温度为900℃,时间为10小时,随后冷却至室温,即可制备所需的荧光陶瓷;
实施例4:
A.硅铝酸盐荧光粉的制备:按照化学式(Ca0.6Ba0.4)0.1Al2Si2O8:0.6Eu2+,0.3Dy3+)中各元素的比例,称取BaCO3、CaCO3、Al2O3、SiO2、Eu2O3和Dy2O3作为原料,将称取的原料混合均匀,进行球磨,球磨时间为4小时,球磨速度120转/分钟;球磨结束后,将原料装入坩埚中,在高温固相炉活性炭所形成的还原气氛中进行高温煅烧,温度为1400℃,时间为11小时,煅烧结束后,将高温固相炉温度降至室温时,打开炉膛,取出材料,粉碎过筛,即可制备所需的铝硅酸盐荧光粉;
B.荧光陶瓷的制备:按照荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别为70%、1%和29%称取材料,加入球磨罐中进行球磨,球磨时间为9小时,球磨速度300转/分钟,球磨结束后,将材料进行干压成型,压力为120MPa,保压时间13分钟,干压结束后进行冷等静压成型,压力为300MPa,保压时间8分钟,冷等静压结束后,将材料进行真空煅烧,温度为1500℃,时间为13小时,真空度10-4Pa,真空煅烧结束后进行热等静压煅烧,温度为1650℃,时间为5小时,压力为150MPa,最后进行退火处理,温度为950℃,时间为11小时,随后冷却至室温,即可制备所需的荧光陶瓷;
实施例5:
A.硅铝酸盐荧光粉的制备:按照化学式(Ca0.5Ba0.5)0.3Al2Si2O8:0.5Eu2+,0.2Tb3+)中各元素的比例,称取BaCO3、CaCO3、Al2O3、SiO2、Eu2O3和Tb2O3作为原料,将称取的原料混合均匀,进行球磨,球磨时间为3.5小时,球磨速度120转/分钟;球磨结束后,将原料装入坩埚中,在高温固相炉N2/H2所形成的还原气氛中进行高温煅烧,温度为1050℃,时间为11小时,煅烧结束后,将高温固相炉温度降至室温时,打开炉膛,取出材料,粉碎过筛,即可制备所需的铝硅酸盐荧光粉;
B.荧光陶瓷的制备:按照荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别称取材料,加入球磨罐中进行球磨,球磨时间为10小时,球磨速度250转/分钟,球磨结束后,将材料进行干压成型,压力为140MPa,保压时间12分钟,干压结束后进行冷等静压成型,压力为300MPa,保压时间6分钟,冷等静压结束后,将材料进行真空煅烧,温度为1650℃,时间为11小时,真空度10-2Pa,真空煅烧结束后进行热等静压煅烧,温度为1600℃,时间为6.5小时,压力为200MPa,最后进行退火处理,温度为950℃,时间为8.5小时,随后冷却至室温,即可制备所需的荧光陶瓷。
Claims (6)
1.一种用于照明或显示的荧光陶瓷,其特征在于:所述的荧光陶瓷由陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉通过高温烧结工艺制备而成;所述的铝硅酸盐荧光粉化学式为(Ca1-xMx)1-y-zAl2Si2O8:yEu2+,zR,元素M为Mg,Sr,Ba中的一种,R为Ce3+,Mn4+,Dy3+,Tb3+中的一种,其中x,y,z为摩尔系数,范围0.01<x<1,0.2≤y≤0.7,0≤z≤0.6,y+z<1,激发光谱范围250-480nm,发射光谱范围400-700nm。
2.根据权利要求1所述的用于照明或显示的荧光陶瓷,其特征在于:所述的陶瓷原料粉体为MgAl2O4、Y2O3、MgAlON和AlN中的至少一种。
3.根据权利要求1所述的用于照明或显示的荧光陶瓷,其特征在于:所述的烧结助剂为MgO、SiO2、TiO2和CaO中的至少一种。
4.根据权利要求1所述的用于照明或显示的荧光陶瓷,其特征在于:所述的荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别为:70-90%、0.5-8%和2-29.5%。
5.根据权利要求1所述的用于照明或显示的荧光陶瓷,包括以下实现步骤:
A.硅铝酸盐荧光粉的制备:按照化学式(Ca1-xMx)1-y-zAl2Si2O8:yEu2+,zR中各元素的比例,称取元素M的碳酸盐、CaCO3、Al2O3、SiO2、Eu2O3和元素R的氧化物作为原料,将称取的原料混合均匀,进行球磨,球磨时间为3-4小时,球磨速度100-130转/分钟;球磨结束后,将原料装入坩埚中,在高温固相炉还原气氛中进行高温煅烧,温度为1050-1450℃,时间为8-12小时,煅烧结束后,将高温固相炉温度降至室温时,打开炉膛,取出材料,粉碎过筛,即可制备所需的铝硅酸盐荧光粉;
B.荧光陶瓷的制备:按照荧光陶瓷中的陶瓷原料粉体、烧结助剂和铝硅酸盐荧光粉的质量配比分别称取材料,加入球磨罐中进行球磨,球磨时间为5-20小时,球磨速度200-300转/分钟,球磨结束后,将材料进行干压成型,压力为80-150MPa,保压时间5-15分钟,干压结束后进行冷等静压成型,压力为200-400MPa,保压时间5-10分钟,冷等静压结束后,将材料进行真空煅烧,温度为1500-1750℃,时间为7-13小时,真空度10-1-10-4Pa,真空煅烧结束后进行热等静压煅烧,温度为1600-1700℃,时间为2-8小时,压力为150-200MPa,最后进行退火处理,温度为700-1000℃,时间为8-12小时,随后冷却至室温,即可制备所需的荧光陶瓷。
6.根据权利要求5所述的用于照明或显示的荧光陶瓷的实现步骤,其特征在于:所述的还原气氛由活性炭或者N2/H2提供。
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CN107739153A (zh) * | 2017-11-06 | 2018-02-27 | 南昌大学 | 一种具有高效绿光发射的透明玻璃及制备方法 |
CN110056838A (zh) * | 2019-05-27 | 2019-07-26 | 轻工业部南京电光源材料科学研究所 | 一种紫外上转换植物保护灯及其制备方法 |
CN111517804A (zh) * | 2020-04-27 | 2020-08-11 | 中国科学院上海硅酸盐研究所 | 一种氮化物红色复相荧光陶瓷及其制备方法 |
CN111517804B (zh) * | 2020-04-27 | 2021-08-31 | 中国科学院上海硅酸盐研究所 | 一种氮化物红色复相荧光陶瓷及其制备方法 |
CN114921244A (zh) * | 2022-05-24 | 2022-08-19 | 营口理工学院 | 一种纺锤棒状MgAl2O4:Tb3+荧光粉及制备方法 |
CN115784717A (zh) * | 2022-12-08 | 2023-03-14 | 中国科学院上海硅酸盐研究所 | 一种铝酸锶长余辉发光陶瓷及其制备方法 |
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