CN106856223A - A kind of perovskite solar cell of unglazed hysteresis effect and preparation method thereof - Google Patents
A kind of perovskite solar cell of unglazed hysteresis effect and preparation method thereof Download PDFInfo
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- CN106856223A CN106856223A CN201611243323.9A CN201611243323A CN106856223A CN 106856223 A CN106856223 A CN 106856223A CN 201611243323 A CN201611243323 A CN 201611243323A CN 106856223 A CN106856223 A CN 106856223A
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H—ELECTRICITY
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Abstract
The present invention relates to a kind of perovskite solar cell of unglazed hysteresis effect and preparation method thereof, the structure of the perovskite solar cell is sequentially set to from bottom to top：Transparent substrates, transparent anode, hole transmission layer, perovskite light-absorption layer, composite electron transport layer, hole blocking layer and metallic cathode.It uses PC71BM and C60The efficiency maximum of the perovskite battery that composite construction is prepared as electron transfer layer can reach 14.08%, and open-circuit voltage can reach 0.87V, and fill factor, curve factor reaches 0.72.PC71BM and C60Composite construction can be prevented effectively by moisture, oxygen and light etc., thus perovskite solar cell can be prepared in the environment of 45% high humility.While PC71BM and C60Composite construction can effectively reduce series resistance, improve electron transport ability, so as to significantly increase the current density of battery, obtain the solar cell of high performance, unglazed hysteresis effect.
Description
Technical field
The present invention relates to a kind of perovskite solar cell of organic inorganic hybridization, and in particular under a kind of humidity environment
Perovskite solar cell of unglazed hysteresis effect for preparing and preparation method thereof, belongs to technical field of solar batteries.
Background technology
With the development of society, the problems such as current people are faced with environmental pollution, shortage of resources, find and development cleaning
Regenerative resource has become the task of top priority of people.Researcher seeks the new free of contamination energy and carrys out generation in constantly exploration
For non-renewable energy resources.Solar energy is renewable because its is pollution-free, and quantity is big, and using region is unrestricted etc., advantage turns into grinds
The primary study object of the person of studying carefully.The occupation rate of market value of current silion cell is very high, but, the manufacturing process and its height of silion cell
High cost so that researcher goes to seek a kind of new solar battery structure.
2009, a kind of new solar cell was using the CH3NH3PbX3 of perovskite structure as opto-electronic conversion material
Material, therefore it is referred to as Ca-Ti ore type solar cell.Since then in a few years, the efficiency that perovskite solar cell is lifted is very
Substantially, from 3.8% (Kojima A, Teshima K, Shirai Y, the Miyasaka T. Organometal of 2009
Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells[J]. J. Am. Chem. Soc,2009,131(17) :6050-6051), ceiling capacity conversion efficiency is developed so far more than 22.1 %
(NREL, Best Research-Cell Efficiencies [M] http://www.nrel.gov/ncpv/images/
efficiency_chart.jpg. ).Because the raw material of perovskite solar cell preparation is cheap, preparation cost is low, energy turns
Change that efficiency is higher, thus there is huge potential using value in field of solar energy, will occupy important in future source of energy structure
Status.
Conventional perovskite solar cell mainly has ITO or FTO electrodes, electron transfer layer（ETM）, perovskite light absorbs
Layer, hole transmission layer（HTM）And metal electrode（Usually Au or Ag）Composition.When sunshine is excited, calcium titanium ore bed can be produced
Light induced electron and hole, wherein electronics reach anode through electron transfer layer, are then transferred to negative electrode by external circuit；Hole is through sky
Cave transport layer reaches negative electrode, so far, completes a circuit loop.Because electron transfer layer is connection FTO（Or ITO）Negative electrode and calcium
The key sequence boundary layer of titanium ore light-absorption layer, bears the critical function of electron transport and level-density parameter, therefore be all under normal circumstances
Cannot save.
The problems such as perovskite solar cell needs preparation, stability difference in the glove box of anhydrous and oxygen-free, limits calcium
The practical application of titanium ore battery.Perovskite organic-inorganic hybrid material is prepared under the conditions of water oxygen can cause its perovskite thin film to drop
Solution, using hydrophobic material as electron transfer layer can effectively degraded of the exclusion of water to perovskite thin film, while from electronics
The good material of transmission performance can effectively increase current density, reduce series resistance, obtain high performance battery.It is simultaneously optomagnetic
Residual effect should be also the very important problem of perovskite battery, and the sweep speed of J-V curves and scanning direction are responsible for its effect
The change of rate, sometimes influences very big, so prepared by the perovskite battery of unglazed magnetic hysteresis is also what people were pursued.
The content of the invention
Technical problem：The invention provides a kind of perovskite solar cell of unglazed hysteresis effect and preparation method thereof,
The perovskite solar cell is by based on PC71BM and C60Composite construction does electron transfer layer, effectively prevents by moisture, oxygen
Gas and light etc., while PC71BM and C60Composite construction can effectively reduce series resistance, improve electron transport ability, so as to wet
Degree environment in larger condition than preparing perovskite solar cell.
Technical scheme
A kind of perovskite solar cell of unglazed hysteresis effect, the battery is followed successively by from bottom to top：It is transparent substrate, transparent
Anode layer, hole transmission layer, perovskite light-absorption layer, composite electron transport layer, hole blocking layer, metal cathode layer.
Material used is PbI in the perovskite light-absorption layer2With CH3NH3Perovskite crystal CH prepared by I3NH3PbI3；
The hole transport layer material is PEDOT：PSS；The metallic cathode material is the one kind in Al, Ag, Au；The transparent anode
Material is ITO；The non-transparent substrate material is clear glass.
The composite electron transport layer is double-layer structure, and lower floor is PC71BM fullerene derivates, upper strata is C60。
The hole barrier layer material is organic small molecule material BCP.
The thickness of the hole transmission layer is 25 nm, and the thickness of perovskite light-absorption layer is 100 ~ 300 nm, and composite electron is passed
The thickness of defeated layer is 30 ~ 50 nm, and the thickness of hole blocking layer is 10 nm, and the thickness of metal cathode layer is 120 nm.
A kind of preparation method of the perovskite solar cell of unglazed hysteresis effect, the described method comprises the following steps：
1）The preparation of transparent anode layer：Etching groove is etched on the anode layer of ITO electro-conductive glass, nitrogen is used after then cleaning up
Air-blowing dry doubling carries out the UV treatment of 15min；
2）The preparation of hole transmission layer：With the rotating speed spin coating of 3500rpm on clean ITO electro-conductive glass after being processed through UV
PEDOT:PSS, spin-coating time is 60s, and then 120 DEG C for the treatment of of annealing 1 hour in atmosphere, form hole transmission layer；
3）The preparation of perovskite light-absorption layer：In glove box, with the rotating speed of 1000 ~ 2500rpm by CH3NH3PbI3Solution is spun to
PEDOT：In PSS layer, spin-coating time is 60s, and in spin coating 32s, rapid drop coating toluene, dries naturally after spin coating under the conditions of room temperature
100 DEG C for the treatment of of annealing 3 ~ 15 minutes are carried out after 5min, perovskite light-absorption layer is formed；
4）It is prepared by composite electron transport layer：After by the slice, thin piece cooling annealed, by PC71BM fullerene derivate solution is spun to calcium
On titanium ore light-absorption layer, the spin speed for using is 1000 ~ 8000 rpm, and spin-coating time is 30s；Equipment is crossed using vacuum steaming to exist
PC71Steamed on BM and cross C60, form composite electron transmission Rotating fields, C60Thickness is 1nm ~ 50nm, and the speed that steaming is crossed is 0.03nm/s,
The air pressure environment that its steaming is crossed is less than 3 × 10-4Pa；
5）The preparation of hole blocking layer：Steamed using vacuum and cross equipment in C60Organic small molecule material BCP is crossed in upper steaming, forms hole
Barrier layer, the thickness of hole blocking layer is 10 nm, and the speed that steaming is crossed is 0.03nm/s, the air pressure environment that its steaming is crossed less than 3 ×
10-4Pa；
6）The preparation of metal cathode layer：Steam to cross equipment and is steamed on hole blocking layer using vacuum and cross metal, formation metal cathode layer,
The thickness of metal cathode layer is 80nm ~ 120nm, and steaming crosses speed for 0.8nm/s.The air pressure environment that its steaming is crossed is less than 3 × 10-4 Pa。
In step 3）In, CH3NH3PbI3Solution is prepared obtains by the following method：By PbI2And CH3NH3I by mole
Than 1:1 is dissolved in gamma-butyrolacton（GBL）With dimethyl sulfoxide（DMSO）In solution, two kinds of volume ratios of solvent are 7:3, it is mixed
Solution uniform stirring 2 hours at a temperature of 60 DEG C, make the CH that concentration is 1 mol/L3NH3PbI3Solution.
In step 4）In, PC71BM solution is prepared by the following method：By fullerene derivate PC71BM is dispersed in two
In chlorobenzene, make its concentration for 20mg/mL, 24h is stirred at normal temperatures.
In step 3）In, it is aerobic or oxygen-free environment in the glove box, humidity is 0-45%.
Perovskite solar cell of the present invention can be packaged using epoxy resin, cover glass.
Beneficial effect：
（1）, the present invention use PC71BM and C60Composite construction does electron transfer layer, can effectively prevent by moisture, oxygen and
Light etc., is not influenceed by oxygen and water, thus unglazed magnetic hysteresis effect can be prepared in humidity is up to the environment of 45% high humility
The perovskite solar cell answered, solving prior art perovskite solar cell needs to be made in the glove box of anhydrous and oxygen-free
It is standby, the problems such as stability is poor.
（2）, the present invention use PC71BM and C60Composite construction does electron transfer layer, can effectively reduce series resistance, carries
Electron transport ability high, so as to effectively improve current density and FF, maximal efficiency can bring up to 14%, open-circuit voltage energy
0.87V is reached, fill factor, curve factor reaches 0.72.
（3）, the absorbed layer of perovskite battery is prepared using a step spin-coating method in the present invention, can effectively be controlled by spin coating
The size of the thickness of absorbed layer, roughness and perovskite crystal, so as to be easy to prepare the unglazed hysteresis effect of high-performance
Perovskite solar cell.
（4）, the usable Al of the present invention as metallic cathode, it is with low cost.
（5）, the packaged type that uses of the present invention can be using first smearing epoxy resin, then with UV illumination 15 minutes.This
Not only operating process is simple to plant packaged type, can reach good packaging effect.
Brief description of the drawings
Fig. 1 is a kind of device junction composition of the perovskite solar cell of unglazed hysteresis effect of the invention.
Fig. 2 is a kind of device J-V curve maps of the perovskite solar cell of unglazed hysteresis effect of the invention, wherein a,
B, c line correspond to embodiment 2,3,4 respectively.
Fig. 3 a and 3b are the CH prepared by spin-coating method in the embodiment of the present invention 33NH3PbI3The low power number and high power of film
Number SEM figures.
Fig. 4 is the device of the perovskite solar cell of unglazed hysteresis effect obtained in the embodiment of the present invention 2 by just sweeping
（Low-voltage is to high voltage 1.2V to -1.2V）Swept with counter（High voltage is to low-voltage 1.2V to -1.2V）J-V curve maps.
The CH prepared by spin-coating method in Fig. 5 embodiment of the present invention 23NH3PbI3The XRD of film.
Specific embodiment
Embodiment 1
By PbI2And CH3NH3I in molar ratio 1:1 is dissolved in gamma-butyrolacton（GBL）With dimethyl sulfoxide（DMSO）In solution, two kinds molten
The volume ratio of agent is 7:3, mixed solution uniform stirring 2 hours at a temperature of 60 DEG C, it is 1 mol/L to make concentration
CH3NH3PbI3Solution, it is stand-by.By fullerene derivate PC71BM is dispersed in dichloro-benzenes, makes its concentration for 20mg/mL, in normal temperature
Lower stirring 24h is that can obtain PC71BM fullerene derivate solution, it is stand-by.
The ITO electro-conductive glass that will have been etched is successively with washing lotion solution, deionized water, acetone, each twice ultrasound of ethanol
15min.Cleaned ITO electro-conductive glass is dried up and UV15min with nitrogen.Using spin coating instrument by UV good ITO electro-conductive glass
With the rotating speed spin coating PEDOT of 3500rpm：PSS solution, rotational time is 1min, and spin coating carries out 120 DEG C and moves back in atmosphere after finishing
Fire, annealing time is 1h, forms hole transmission layer.Then will move back fire slice, thin piece be put into common glove box, without every
Exhausted water and oxygen, with the CH that the rotating speed of 1000rpm will be stirred3NH3PbI3Solution is spun to PEDOT：In PSS layer, spin-coating time
It is 60s, one layer of toluene of rapid drop coating, dries 5min naturally afterwards during spin coating 32s under room temperature condition, then carries out 100 DEG C of annealing 3
Minute treatment, forms high-quality light-absorption layer.After by the slice, thin piece cooling annealed, by PC71BM fullerene derivate solution is spun to suction
On photosphere, the spin speed for using is 1000 rpm, and spin-coating time is 30s.Steamed using vacuum and cross equipment in PC71Steamed on BM and crossed
C60, form compound electric transmission Rotating fields.C60Thickness is 1nm, and the speed that steaming is crossed is 0.03nm/s.The air pressure ring that its steaming is crossed
Border is less than 3 × 10-4 Pa.Steamed using vacuum and cross equipment in C60Organic small molecule material BCP is crossed in upper steaming, forms hole blocking layer.
The thickness of hole blocking layer is 10 nm, and the speed that steaming is crossed is 0.03nm/s.The air pressure environment that its steaming is crossed is less than 3 × 10-4 Pa,
Then steamed on hole blocking layer and cross metal, form metal electrode.The thickness of metallic cathode is 80nm, and steaming crosses speed for 0.8nm/
s.The air pressure environment that its steaming is crossed is less than 3 × 10-4Pa.The device of preparation smears epoxide resin material, then ultraviolet light 15
Min, is packaged.
Embodiment 2
By PbI2And CH3NH3I in molar ratio 1:1 is dissolved in gamma-butyrolacton（GBL）With dimethyl sulfoxide（DMSO）In solution, two kinds molten
The volume ratio of agent is 7:3, mixed solution uniform stirring 2 hours at a temperature of 60 DEG C, it is 1 mol/L to make concentration
CH3NH3PbI3Solution, it is stand-by.By fullerene derivate PC71BM is dispersed in dichloro-benzenes, makes its concentration for 20mg/mL, in normal temperature
Lower stirring 24h is that can obtain PC71BM fullerene derivate solution, it is stand-by.
The ITO electro-conductive glass that will have been etched is successively with washing lotion solution, deionized water, acetone, each twice ultrasound of ethanol
15min.Cleaned ITO electro-conductive glass is dried up and UV15min with nitrogen.Using spin coating instrument by UV good ITO electro-conductive glass
With the rotating speed spin coating PEDOT of 3500rpm：PSS solution, rotational time is 1min, and spin coating carries out 120 DEG C and moves back in atmosphere after finishing
Fire, annealing time is 1h, forms hole transmission layer.Then will move back fire slice, thin piece be put into common glove box, without every
Exhausted water and oxygen, with the CH that the rotating speed of 1500rpm will be stirred3NH3PbI3Solution is spun to PEDOT：In PSS layer, spin-coating time
It is 60s, the toluene of the mL of rapid drop coating 0.3, dries 5min naturally afterwards during spin coating 32s under room temperature condition, then carries out 100 DEG C
Annealing is processed for 3 minutes, forms high-quality light-absorption layer.After by the slice, thin piece cooling annealed, by PC71BM fullerene derivate solution spin coatings
Onto light-absorption layer, the spin speed for using is 4000 rpm, and spin-coating time is 30s.Steamed using vacuum and cross equipment in PC71On BM
C is crossed in steaming60, form compound electric transmission Rotating fields.C60Thickness is 10 nm, and the speed that steaming is crossed is 0.03nm/s.What its steaming was crossed
Air pressure environment is less than 3 × 10-4Pa.Steamed using vacuum and cross equipment in C60Organic small molecule material BCP is crossed in upper steaming, forms hole resistance
Barrier.The thickness of hole blocking layer is 10 nm, and the speed that steaming is crossed is 0.03nm/s.The air pressure environment that its steaming is crossed is less than 3 × 10-4
Pa, then steams on hole blocking layer and crosses metal, forms metal electrode.The thickness of metallic cathode is 100nm, and steaming is crossed speed and is
0.8nm/s.The air pressure environment that its steaming is crossed is less than 3 × 10-4Pa.The device of preparation smears epoxide resin material, then ultraviolet lighting
15 min are penetrated, is packaged.
Under room temperature environment, the J-V curves of device are surveyed.Line a in prepared device performance corresponding diagram 2 in J-V curves
Shown, prepared device is by just sweeping（Low-voltage is to high voltage 1.2V to -1.2V）Swept with counter（High voltage is to low-voltage 1.2V
To -1.2V）J-V curves as shown in figure 4, can obtain device from figure opens pressure for 0.83 V, fill factor, curve factor is 0.65, effect
Rate is 11.78%, is prepared CH3NH3PbI3Crystal XRD is characterized as shown in figure 5, surface forms perovskite material completely
Material.
Embodiment 3
By PbI2And CH3NH3I in molar ratio 1:1 is dissolved in gamma-butyrolacton（GBL）With dimethyl sulfoxide（DMSO）In solution, two kinds molten
The volume ratio of agent is 7:3, mixed solution uniform stirring 2 hours at a temperature of 60 DEG C, it is 1 mol/L to make concentration
CH3NH3PbI3Solution, it is stand-by.By fullerene derivate PC71BM is dispersed in dichloro-benzenes, makes its concentration for 20mg/mL, in normal temperature
Lower stirring 24h is that can obtain PC71BM fullerene derivate solution, it is stand-by.
To etch and cleaned good ITO electro-conductive glass uses washing lotion solution, deionized water, acetone, ethanol each two successively
All over ultrasound 15min.Cleaned ITO electro-conductive glass is dried up and UV15min with nitrogen.The good ITO of UV are led using spin coating instrument
Electric glass is with the rotating speed spin coating PEDOT of 3500rpm：PSS solution, rotational time is 1min, and spin coating is carried out in atmosphere after finishing
120 DEG C of annealing, annealing time is 1h, forms hole transmission layer.Then the slice, thin piece that fire will have been moved back is put into common glove box,
Without exclusion of water and oxygen, with the CH that the rotating speed of 2000rpm will be stirred3NH3PbI3Solution is spun to PEDOT：In PSS layer, rotation
The painting time is 60s, and the toluene of the mL of rapid drop coating 0.3, dries 5min naturally afterwards during spin coating 32s under room temperature condition, then carries out
100 DEG C of annealing are processed for 3 minutes, form high-quality light-absorption layer.After by the slice, thin piece cooling annealed, by PC71BM fullerene derivates are molten
Liquid is spun on light-absorption layer, and the spin speed for using is 6000 rpm, and spin-coating time is 30s.Equipment is crossed using vacuum steaming to exist
PC71Steamed on BM and cross C60, form compound electric transmission Rotating fields.C60Thickness is 20 nm, and the speed that steaming is crossed is 0.03nm/s.Its
The air pressure environment that steaming is crossed is less than 3 × 10-4Pa.Steamed using vacuum and cross equipment in C60Organic small molecule material BCP is crossed in upper steaming, is formed
Hole blocking layer.The thickness of hole blocking layer is 10 nm, and the speed that steaming is crossed is 0.03nm/s.The air pressure environment that its steaming is crossed is less than 3
×10-4 Pa, then steams on hole blocking layer and crosses metal, forms metal electrode.The thickness of metallic cathode is 120nm, and speed is crossed in steaming
Rate is 0.8nm/s.The air pressure environment that its steaming is crossed is less than 3 × 10-4Pa.The device of preparation smears epoxide resin material, then ultraviolet
The min of light irradiation 15, is packaged.
Under room temperature environment, the J-V curves of device are surveyed.Line b in prepared device performance corresponding diagram 2 in J-V curves
It is shown.Device can be obtained from figure opens pressure for 0.87 V, and fill factor, curve factor is 0.72, and efficiency is 14%, prepared
CH3NH3PbI3As shown in Figure 3 a, Fig. 3 b are corresponding high magnification numbe SEM scanning figures to the surface topography of film, and surface film is fine and close flat
It is whole, almost imporosity.
Embodiment 4
By PbI2And CH3NH3I in molar ratio 1:1 is dissolved in gamma-butyrolacton（GBL）With dimethyl sulfoxide（DMSO）In solution, two kinds molten
The volume ratio of agent is 7:3, mixed solution uniform stirring 2 hours at a temperature of 60 DEG C, it is 1 mol/L to make concentration
CH3NH3PbI3Solution, it is stand-by.By fullerene derivate PC71BM is dispersed in dichloro-benzenes, makes its concentration for 20mg/mL, in normal temperature
Lower stirring 24h is that can obtain PC71BM fullerene derivate solution, it is stand-by.
To etch and cleaned good ITO electro-conductive glass uses washing lotion solution, deionized water, acetone, ethanol each two successively
All over ultrasound 15min.Cleaned ITO electro-conductive glass is dried up and UV15min with nitrogen.The good ITO of UV are led using spin coating instrument
Electric glass is with the rotating speed spin coating PEDOT of 3500rpm：PSS solution, rotational time is 1min, and spin coating is carried out in atmosphere after finishing
120 DEG C of annealing, annealing time is 1h, forms hole transmission layer.Then the slice, thin piece that fire will have been moved back is put into common glove box,
Without exclusion of water and oxygen, with the CH that the rotating speed of 2500rpm will be stirred3NH3PbI3Solution is spun to PEDOT：In PSS layer, rotation
The painting time is 60s, and the toluene of the mL of rapid drop coating 0.3, dries 5min naturally afterwards during spin coating 32s under room temperature condition, then carries out
100 DEG C of annealing are processed for 3 minutes, form high-quality light-absorption layer.After by the slice, thin piece cooling annealed, by PC71BM fullerene derivates are molten
Liquid is spun on light-absorption layer, and the spin speed for using is 8000 rpm, and spin-coating time is 30s.Equipment is crossed using vacuum steaming to exist
PC71Steamed on BM and cross C60, form compound electric transmission Rotating fields.C60Thickness is 50 nm, and the speed that steaming is crossed is 0.03nm/s.Its
The air pressure environment that steaming is crossed is less than 3 × 10-4Pa.Steamed using vacuum and cross equipment in C60Organic small molecule material BCP is crossed in upper steaming, is formed
Hole blocking layer.The thickness of hole blocking layer is 10 nm, and the speed that steaming is crossed is 0.03nm/s.The air pressure environment that its steaming is crossed is less than 3
×10-4 Pa, then steams on hole blocking layer and crosses metal, forms metal electrode.The thickness of metallic cathode is 120nm, and speed is crossed in steaming
Rate is 0.8nm/s.The air pressure environment that its steaming is crossed is less than 3 × 10-4Pa.The device of preparation smears epoxide resin material, then ultraviolet
The min of light irradiation 15, is packaged.
Under room temperature environment, the J-V curves of device are surveyed.Line c in prepared device performance corresponding diagram 2 in J-V curves
It is shown.Device can be obtained from figure opens pressure for 0.83 V, and fill factor, curve factor is 0.62, and efficiency is 10.6%.
Claims (9)
1. a kind of perovskite solar cell of unglazed hysteresis effect, it is characterised in that：The battery is followed successively by from bottom to top：Thoroughly
Bright substrate layer, transparent anode layer, hole transmission layer, perovskite light-absorption layer, composite electron transport layer, hole blocking layer, metal are cloudy
Pole layer.
2. the perovskite solar cell of a kind of unglazed hysteresis effect according to claim 1, it is characterised in that：The calcium
Material used is perovskite crystal CH in titanium ore light-absorption layer3NH3PbI3；The hole transport layer material is PEDOT：PSS；Institute
It is the one kind in Al, Ag, Au to state metallic cathode material；The transparent anode material is ITO；The non-transparent substrate material is transparent
Glass.
3. the perovskite solar cell of a kind of unglazed hysteresis effect according to claim 1, it is characterised in that：It is described multiple
Conjunction electron transfer layer is double-layer structure, and lower floor is PC71BM fullerene derivates, upper strata is C60。
4. the perovskite solar cell of a kind of unglazed hysteresis effect according to claim 1, it is characterised in that：The sky
Cave barrier material is organic small molecule material BCP.
5. the perovskite solar cell of a kind of unglazed hysteresis effect according to claim 1, it is characterised in that：The sky
The thickness of cave transport layer is 25 nm, and the thickness of perovskite light-absorption layer is 100 ~ 300 nm, and the thickness of composite electron transport layer is 30
~ 50 nm, the thickness of hole blocking layer is 10 nm, and the thickness of metal cathode layer is 120 nm.
6. the preparation side of the perovskite solar cell of a kind of unglazed hysteresis effect according to claim any one of 1-5
Method, it is characterised in that the described method comprises the following steps：
1）The preparation of transparent anode layer：Etching groove is etched on the anode layer of ITO electro-conductive glass, nitrogen is used after then cleaning up
Air-blowing dry doubling carries out the UV treatment of 15min；
2）The preparation of hole transmission layer：With the rotating speed spin coating of 3500rpm on clean ITO electro-conductive glass after being processed through UV
PEDOT:PSS, spin-coating time is 60s, and then 120 DEG C for the treatment of of annealing 1 hour in atmosphere, form hole transmission layer；
3）The preparation of perovskite light-absorption layer：In glove box, with the rotating speed of 1000 ~ 2500rpm by CH3NH3PbI3Solution is spun to
PEDOT：In PSS layer, spin-coating time is 60s, and in spin coating 32s, rapid drop coating toluene, then dries naturally under room temperature condition
100 DEG C for the treatment of of annealing 3 ~ 15 minutes are carried out after 5min, perovskite light-absorption layer is formed；
4）It is prepared by composite electron transport layer：After by the slice, thin piece cooling annealed, by PC71BM fullerene derivate solution is spun to extinction
On layer, the spin speed for using is 1000 ~ 8000 rpm, and spin-coating time is 30s；Then steamed using vacuum and cross equipment in PC71BM
C is crossed in upper steaming60, form composite electron transmission Rotating fields, C60Thickness is 1nm ~ 50nm, and the speed that steaming is crossed is 0.03nm/s, and its steaming is crossed
Air pressure environment be less than 3 × 10-4Pa；
5）The preparation of hole blocking layer：Steamed using vacuum and cross equipment in C60Organic small molecule material BCP is crossed in upper steaming, forms hole resistance
Barrier, the thickness of hole blocking layer is 10 nm, and the speed that steaming is crossed is 0.03nm/s, and the air pressure environment that its steaming is crossed is less than 3 × 10-4
Pa；
6）The preparation of metal cathode layer：Steam to cross equipment and is steamed on hole blocking layer using vacuum and cross metal, formation metal cathode layer,
The thickness of metal cathode layer is 80nm ~ 120nm, and steaming crosses speed for 0.8nm/s, and the air pressure environment that its steaming is crossed is less than 3 × 10-4 Pa。
7. a kind of preparation method of the perovskite solar cell of unglazed hysteresis effect according to claim 6, its feature exists
In：In step 3）In, CH3NH3PbI3Solution is prepared obtains by the following method：By PbI2And CH3NH3I in molar ratio 1:1
It is dissolved in gamma-butyrolacton（GBL）With dimethyl sulfoxide（DMSO）In solution, two kinds of volume ratios of solvent are 7:3, mixed solution exists
Uniform stirring 2 hours at a temperature of 60 DEG C, prepared concentration is the CH of 1 mol/L3NH3PbI3Solution.
8. a kind of preparation method of the perovskite solar cell of unglazed hysteresis effect according to claim 6, its feature exists
In：In step 4）In, PC71BM fullerene derivate solution is prepared by the following method：By fullerene derivate PC71BM
It is dispersed in dichloro-benzenes, makes its concentration for 20mg/mL, 24h is stirred at normal temperatures.
9. a kind of preparation method of the perovskite solar cell of unglazed hysteresis effect according to claim 6, its feature exists
In：Step 3）In, it is aerobic or oxygen-free environment in the glove box, humidity is 0-45%.
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| CN109786555A (en) * | 2018-12-07 | 2019-05-21 | 南京邮电大学 | A kind of perovskite solar battery and preparation method |
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| CN109873081A (en) * | 2019-03-21 | 2019-06-11 | 南京邮电大学 | A kind of organic photovoltaic battery and preparation method thereof based on organic/inorganic diffusion boundary layer |
| CN109873081B (en) * | 2019-03-21 | 2022-08-26 | 南京邮电大学 | Organic photovoltaic cell based on organic/inorganic gradient diffusion interface layer and preparation method thereof |
| WO2021218522A1 (en) * | 2020-04-28 | 2021-11-04 | 杭州纤纳光电科技有限公司 | Perovskite solar battery with composite transport layer, and method for preparing same |
| WO2021218523A1 (en) * | 2020-04-28 | 2021-11-04 | 杭州纤纳光电科技有限公司 | Perovskite solar battery which contains laminated composite transport layer, and method for preparing same |
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