CN106848069A - A kind of new TiO2Nano material and preparation method and purposes - Google Patents
A kind of new TiO2Nano material and preparation method and purposes Download PDFInfo
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- CN106848069A CN106848069A CN201710116785.2A CN201710116785A CN106848069A CN 106848069 A CN106848069 A CN 106848069A CN 201710116785 A CN201710116785 A CN 201710116785A CN 106848069 A CN106848069 A CN 106848069A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention belongs to field of nano material preparation, and in particular to a kind of novel nano-material and Preparation method and use.From nano-TiO2With azobenzene as basic material, both are thoroughly mixed in a solvent, silane coupler and bronsted acid catalyst are thoroughly mixed, using silane coupler and bronsted acid catalyst by nano-TiO2With azobenzene catalytic coupling, react and terminate rear product ultrasonic disperse in ultrasonic wave, new TiO is obtained2Nano material.The material is used for polysilicon solar cell, photoelectric transformation efficiency has been reached and has been lifted obvious effect.
Description
Technical field
The invention belongs to field of nano material preparation, and in particular to a kind of new TiO2 nano materials and preparation method and use
On the way.
Background technology
Nano material refers at least one-dimensional in nano-scale (0.1-100nm) or by their conducts in three dimensions
The material that elementary cell is constituted, this is about as much as the yardstick that 10~100 atoms are arranged closely together.Due to its size
Already close to the coherence length of electronics because by force relevant brought self-organizing so that property great changes will take place.And its chi
Close to the wavelength of light, add it has the special effects of large surface to degree, its characteristic for being showed, for example fusing point, magnetic, light
, heat conduction, conductive characteristic etc., the property for often being showed in integrality different from the material.Using nano material certainly
The optical characteristics of body, is applied in presently the most popular area of solar cell, the research emphasis as experts and scholars.
Solar cell is also called " solar chip " or " photocell ", is a kind of photoelectricity of the utilization sunshine direct generation of electricity
Wafer.As long as it is satisfied the light irradiation of certain illumination conditions, moment output voltage and can have the situation in loop
Lower generation electric current.Physically it is being referred to as photovoltaic, abbreviation photovoltaic (PV).Solar cell be by photoelectric effect or
Photochemical effects directly change into luminous energy in the device of electric energy.With photoelectric effect work thin-film type solar cell as main flow,
And with the implementation solar cell of Photochemical effects work then also in the budding stage.Multi-crystal silicon film solar battery is at present
Be most widely used in solar cell, lower-cost one kind, but its photoelectric transformation efficiency cannot be carried effectively always
Rise, be currently a great problem for perplexing art personnel.
The content of the invention
The purpose of the present invention：For the problem that current multi-crystal silicon film solar battery is present, there is provided a kind of new TiO2
Nano material and preparation method thereof, uses it for preparing multi-crystal silicon film solar battery, improves its photoelectric transformation efficiency.
Technical scheme：A kind of new TiO is provided2Nano material, from nano-TiO2With azobenzene as basic
Material, both are thoroughly mixed in a solvent, silane coupler and bronsted acid catalyst are thoroughly mixed, using silicon
Alkane coupling agent and bronsted acid catalyst are to nano-TiO2With azobenzene catalytic coupling, it is ultrasonic in ultrasonic wave that reaction terminates rear product
Dispersion, is obtained new TiO2Nano material, its preparation method includes：
(1) by nano-TiO2, azobenzene and solvent be added in beaker, be sufficiently stirred for the rotating speed of 300~400r/min
Dissolving 20min；
(2) rotating speed by silane coupler and bronsted acid catalyst with 300~400r/min in another beaker is abundant
Stirring and dissolving 20min, is then poured the mixture into the beaker of step 1, and 3~6h is reacted at normal temperatures and pressures；
(3) after question response terminates by it in ultrasonic wave 1~2h of ultrasonic disperse, finally the product of bottom is filtered, with big
1h is dried after the deionized water rinsing of amount, new TiO is obtained2Nano material.
Preferably, described silane coupler is gamma-aminopropyl-triethoxy-silane, described azobenzene is 4- amino
Azobenzene, described bronsted acid catalyst is HCl, H2SO4Or CH3COOH, described solvent is ethanol.
Preferably, described nano-TiO2, silane coupler, azobenzene, the mol ratio of bronsted acid catalyst and solvent
For:3~5：1:1~5:0.1~0.5:10~20.
By this new TiO2Nano material is used to prepare multi-crystal silicon film solar battery, and its preparation method includes：
(1) new TiO is deposited2Nano material film, the p-type polysilicon piece conduct from purity not less than 99.9999%
Substrate, its resistivity is not less than 0.5 Ω .cm, and thickness range is 100-300 μm, using spraying printing film-forming process in p-type polycrystalline
One layer of new TiO is deposited on silicon substrate2Nano material film；
(2) make annealing treatment, made annealing treatment in the vacuum resistance furnace of logical hydrogen, step 1 is contained into new TiO2Nanometer
The polycrystalline silicon substrate of material film respectively carries out insulation annealing 30 at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively
Minute, it is finally cooled to normal temperature；
(3) PN junction and antireflective film are prepared, the method spread using phosphorus carries out heavy doping to P-type silicon piece, forms PN junction；Using
PECVD is in new TiO2Grown silicon nitride film is used as antireflective film on nano material film；
(4) silver-colored gate electrode and aluminum back electrode are made using magnetron sputtering technique or silk-screen printing technique, polysilicon is obtained thin
Film solar cell.
Preferably, new TiO in step (1)2Nano material film thickness is 50-100nm, antireflective film in step (3)
Thickness is 30-75nm.
Technique effect of the invention：
1 azobenzene and silane coupler organic moiety react and connect in bronsted acid catalyst effect, silane coupled
Agent hydrolysis generation silanol, itself and nano-TiO2There is dehydration and form chemical bond in surface, and then form new TiO2Nanometer material
Material.
2 this kind of materials are a kind of organo-mineral complexing nano materials, except the broadband with general nano material absorbs by force
Property outside, nano material of the invention both has the strong TiO of photoresponse2Composition, and with azobenzene structure, the N units in azobenzene
Element has lone pair electrons, and the lone pair electrons free degree is larger, can be by TiO2The luminous energy of response is conducted to polycrystalline silicon substrate, is realized
Luminous energy effectively and is quickly shifted；The material also there occurs " blue-shifted phenomenon " of absorption spectrum simultaneously, and light absorbing frequency is improved,
The energy of response light also correspondingly improves.2 points of synergies, finally improve the photoelectric transformation efficiency of solar cell.
Specific embodiment
Embodiment 1
New TiO2The preparation of nano material：
(1) 3mol nano-TiOs are selected2, 1mol 4- aminoazabenzols and 10mol ethanol be added in beaker, with 350r/
The rotating speed of min is sufficiently stirred for dissolving 20min；
(2) by 1mol gamma-aminopropyl-triethoxy-silanes and 0.1mol HCl in another beaker with 350r/min's
Rotating speed is sufficiently stirred for dissolving 20min, is then poured into the beaker of step 1, and 3h is reacted at normal temperatures and pressures；
(3) after question response terminates by it in ultrasonic wave ultrasonic disperse 1h, finally the product of bottom is filtered, with substantial amounts of
1h is dried after deionized water rinsing, new TiO is obtained2Nano material.
The preparation of multi-crystal silicon film solar battery：
(1) new TiO is deposited2Nano material film, from the p-type polysilicon piece that purity is 99.99991% as base
Piece, its resistivity is 0.60 Ω .cm, and thickness range is 150 μm, using spraying printing film-forming process on p-type polysilicon substrate
Deposition a layer thickness is the new TiO of 70nm2Nano material film；
(2) make annealing treatment, made annealing treatment in the vacuum resistance furnace of logical hydrogen, step 1 is contained into new TiO2Nanometer
The polycrystalline silicon substrate of material film respectively carries out insulation annealing 30 at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively
Minute, it is finally cooled to normal temperature；
(3) PN junction and antireflective film are prepared, the method spread using phosphorus carries out heavy doping to P-type silicon piece, forms PN junction；Using
PECVD is in new TiO2Growth thickness is the silicon nitride film of 50nm as antireflective film on nano material film；
(4) silver-colored gate electrode and aluminum back electrode are made using magnetron sputtering technique or silk-screen printing technique, polysilicon is obtained thin
Film solar cell.
Embodiment 2
New TiO2The preparation of nano material：
(1) 5mol nano-TiOs are selected2, 5mol 4- aminoazabenzols and 20mol ethanol be added in beaker, with 350r/
The rotating speed of min is sufficiently stirred for dissolving 20min；
(2) by 1mol gamma-aminopropyl-triethoxy-silanes and 0.5mol HCl in another beaker with 350r/min's
Rotating speed is sufficiently stirred for dissolving 20min, is then poured into the beaker of step 1, and 6h is reacted at normal temperatures and pressures；
(3) after question response terminates by it in ultrasonic wave ultrasonic disperse 2h, finally the product of bottom is filtered, with substantial amounts of
1h is dried after deionized water rinsing, new TiO is obtained2Nano material.
The preparation of multi-crystal silicon film solar battery：
(1) new TiO is deposited2Nano material film, from the p-type polysilicon piece that purity is 99.99993% as base
Piece, its resistivity is 0.55 Ω .cm, and thickness range is 200 μm, using spraying printing film-forming process on p-type polysilicon substrate
Deposition a layer thickness is the new TiO of 80nm2Nano material film；
(2) make annealing treatment, made annealing treatment in the vacuum resistance furnace of logical hydrogen, step 1 is contained into new TiO2Nanometer
The polycrystalline silicon substrate of material film respectively carries out insulation annealing 30 at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively
Minute, it is finally cooled to normal temperature；
(3) PN junction and antireflective film are prepared, the method spread using phosphorus carries out heavy doping to P-type silicon piece, forms PN junction；Using
PECVD is in new TiO2Growth thickness is the silicon nitride film of 60nm as antireflective film on nano material film；
(4) silver-colored gate electrode and aluminum back electrode are made using magnetron sputtering technique or silk-screen printing technique, polysilicon is obtained thin
Film solar cell.
Embodiment 3
New TiO2The preparation of nano material：
(1) 4mol nano-TiOs are selected2, 3mol 4- aminoazabenzols and 15mol ethanol be added in beaker, with 350r/
The rotating speed of min is sufficiently stirred for dissolving 20min；
(2) by 1mol gamma-aminopropyl-triethoxy-silanes and 0.3mol HCl in another beaker with 350r/min's
Rotating speed is sufficiently stirred for dissolving 20min, is then poured into the beaker of step 1, and 4h is reacted at normal temperatures and pressures；
(3) after question response terminates by it in ultrasonic wave ultrasonic disperse 1.5h, finally the product of bottom is filtered, with a large amount of
Deionized water rinsing after dry 1h, be obtained new TiO2Nano material.
The preparation of multi-crystal silicon film solar battery：
(1) new TiO is deposited2Nano material film, from the p-type polysilicon piece that purity is 99.99997% as base
Piece, its resistivity is 0.65 Ω .cm, and thickness range is 200 μm, using spraying printing film-forming process on p-type polysilicon substrate
Deposition a layer thickness is the new TiO of 80nm2Nano material film；
(2) make annealing treatment, made annealing treatment in the vacuum resistance furnace of logical hydrogen, step 1 is contained into new TiO2Nanometer
The polycrystalline silicon substrate of material film respectively carries out insulation annealing 30 at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively
Minute, it is finally cooled to normal temperature；
(3) PN junction and antireflective film are prepared, the method spread using phosphorus carries out heavy doping to P-type silicon piece, forms PN junction；Using
PECVD is in new TiO2Growth thickness is the silicon nitride film of 55nm as antireflective film on nano material film；
(4) silver-colored gate electrode and aluminum back electrode are made using magnetron sputtering technique or silk-screen printing technique, polysilicon is obtained thin
Film solar cell.
Comparative example 1
New TiO is not prepared2Nano material, by the new TiO of embodiment 12Make in the step of preparation process (1) of nano material
Nano-TiO2Multi-crystal silicon film solar battery is directly used in, remaining step obtains the polysilicon membrane sun with embodiment 1
Can battery.
Comparative example 2
Without the 4- aminoazabenzols that embodiment 1 is used, new TiO is prepared2The operation of nano material processing step (1)
For:From 3mol nano-TiOs2It is added in beaker with 10mol ethanol, is sufficiently stirred for dissolving 20min with the rotating speed of 350r/min.
Remaining operation obtains multi-crystal silicon film solar battery with embodiment 1.
By solar cell prepared by embodiment 1-3 and comparative example 1-2 put into it is actually used in, the crucial ginseng of detection
Number, as shown in table 1.
Solar cell prepared by the embodiment 1-3 of table 1 and comparative example 1-2 uses parameter list
| Uoc(mV) | Isc(A) | EFF (%) | |
| Embodiment 1 | 754.2 | 12.012 | 20.92 |
| Embodiment 2 | 739.9 | 11.598 | 20.82 |
| Embodiment 3 | 747.1 | 11.747 | 20.88 |
| Comparative example 1 | 579.3 | 8.387 | 20.01 |
| Comparative example 2 | 568.3 | 8.466 | 20.05 |
Claims (6)
1. a kind of new TiO2Nano material, it is characterised in that select nano-TiO2With azobenzene as basic material, incite somebody to action both
Be thoroughly mixed in a solvent, silane coupler and bronsted acid catalyst be thoroughly mixed, using silane coupler and
Bronsted acid catalyst is to nano-TiO2With azobenzene catalytic coupling, reaction terminates rear product ultrasonic disperse in ultrasonic wave, prepared
New TiO2Nano material.
2. a kind of new TiO as claimed in claim 12The preparation method of nano material, it is characterised in that described preparation side
Method includes：
(1) by nano-TiO2, azobenzene and solvent be added in beaker, dissolving is sufficiently stirred for the rotating speed of 300~400r/min
20min；
(2) silane coupler and bronsted acid catalyst are sufficiently stirred in another beaker with the rotating speed of 300~400r/min
Dissolving 20min, is then poured into the beaker of step 1, and 3~6h is reacted at normal temperatures and pressures；
(3) after question response terminates by it in ultrasonic wave ultrasonic disperse 1-2h, finally the product of bottom is filtered, gone with substantial amounts of
Ionized water dries 1h after rinsing, and new TiO is obtained2Nano material.
3. new TiO as claimed in claim 22The preparation method of nano material, it is characterised in that described silane coupler
It is gamma-aminopropyl-triethoxy-silane, described azobenzene is 4- aminoazabenzols, described bronsted acid catalyst is HCl,
H2SO4Or CH3COOH, described solvent is ethanol.
4. new TiO as claimed in claim 22The preparation method of nano material, it is characterised in that described nano-TiO2, silicon
The mol ratio of alkane coupling agent, azobenzene, bronsted acid catalyst and solvent is:3~5：1:1~5:0.1~0.5:10~20.
5. a kind of new TiO as claimed in claim 12The purposes of nano material, it is characterised in that described new TiO2Receive
Rice material is used to prepare solar cell, and the preparation method of battery includes：
(1) new TiO is deposited2Nano material film, from purity not less than 99.9999% p-type polysilicon piece as substrate,
Its resistivity is not less than 0.5 Ω .cm, and thickness range is 100-300 μm, is served as a contrast in p-type polysilicon using spraying printing film-forming process
One layer of new TiO is deposited on bottom2Nano material film；
(2) make annealing treatment, made annealing treatment in the vacuum resistance furnace of logical hydrogen, step 1 is contained into new TiO2Nano material is thin
The polycrystalline silicon substrate of film respectively carries out insulation annealing 30 minutes at 1500 DEG C, 1200 DEG C, 900 DEG C, 600 DEG C and 300 DEG C successively, most
After be cooled to normal temperature；
(3) PN junction and antireflective film are prepared, the method spread using phosphorus carries out heavy doping to P-type silicon piece, forms PN junction；Using
PECVD is in new TiO2Grown silicon nitride film is used as antireflective film on nano material film；
(4) silver-colored gate electrode and aluminum back electrode are made using magnetron sputtering technique or silk-screen printing technique, prepared polysilicon membrane is too
Positive energy battery.
6. new TiO as claimed in claim 52The purposes of nano material, it is characterised in that new TiO in step (1)2Nanometer
Material film thickness is 50-100nm, and anti-reflection film thickness is 30-75nm in step (3).
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Cited By (2)
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| CN108745394A (en) * | 2018-04-13 | 2018-11-06 | 重庆三峡学院 | A kind of catalysis material and preparation method |
| CN112239561A (en) * | 2020-09-24 | 2021-01-19 | 东华大学 | Organic-inorganic hybrid anti-dripping functional material and preparation method and application thereof |
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