CN106847947A - 一种l型聚光光伏电池芯片 - Google Patents

一种l型聚光光伏电池芯片 Download PDF

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CN106847947A
CN106847947A CN201710125585.3A CN201710125585A CN106847947A CN 106847947 A CN106847947 A CN 106847947A CN 201710125585 A CN201710125585 A CN 201710125585A CN 106847947 A CN106847947 A CN 106847947A
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photovoltaic battery
condensation photovoltaic
positive electrode
electrode layer
battery chip
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李利平
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CHENGDU POLYMERIZATION TECHNOLOGY Co Ltd
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CHENGDU POLYMERIZATION TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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Abstract

本发明涉及一种L型聚光光伏电池芯片，属太阳能光伏发电技术领域，包括负电极层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极层，另一面覆上正电极层，所述负电极层之外的部分为有效面积，该种电池芯片能极大地减少聚光光伏电池基材材料的用量，这样就能减少聚光光伏电池芯片的制作成本。

Description

一种L型聚光光伏电池芯片
技术领域
本发明涉及一种光伏发电部件，具体涉及一种L型聚光光伏电池芯片，属太阳能光伏发电技术领域。
背景技术
通常，聚光光伏发电***所寻求的主要益处是在聚光光伏电池芯片的有效面积上得到从菲涅尔透镜汇聚的高密度太阳光。透镜的倍数越高，得到太阳光的密度越高，相同面积上使用的聚光光伏电池芯片越少，单位面积上的发电成本就越低。
目前通常从菲涅尔透镜汇聚过来的焦斑都为正方形，该焦斑的形状和大小也通常和聚光光伏电池芯片的形状和大小一致，从而使菲涅尔透镜汇聚过来的焦斑可以完全汇聚到聚光光伏电池芯片上。但是在实际应用中，聚光光伏电池芯片上的负电极层总是小于聚光光伏电池基材层，由于聚光光伏电池基材层上的基材材料相对很贵（一个平方厘米大小的基材材料大约在50元人民币左右），这样就极大浪费了聚光光伏电池基材层的基材材料。
发明内容
本发明的目的是提供一种L型聚光光伏电池芯片，该电池芯片在于克服现有技术的不足。
为了实现上述技术目的，本发明采取的技术方案是：一种L型聚光光伏电池芯片，其特征是，它包括负电极层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极层，另一面覆上正电极层，所述负电极层之外的部分为有效面积。
所述负电极层为一平整L字形形状，负电极层和聚光光伏电池基材层其中两个相邻端面完全重合。
所述聚光光伏电池基材层为GaInP（磷化铟嫁）/GaAs（砷化镓）/Ge（锗）三层组合体。
所述正电极层为一完全密封的平面，正电极层面积形状和聚光光伏电池基材层面积形状完全一样。
所述有效面积为正方形形状。
本发明的优点和积极效果是：该种电池芯片能极大地减少聚光光伏电池基材材料的用量，这样就能减少聚光光伏电池芯片的制作成本。
附图说明
图1为一种L型聚光光伏电池芯片主视图。
图2为一种L型聚光光伏电池芯片俯视图。
其中：1、负电极层，2、聚光光伏电池基材层，3、正电极层，4、有效面积。
具体实施方式
下面结合附图对本发明作进一步的说明。
一种L型聚光光伏电池芯片，如图1～2所示，包括负电极层1，聚光光伏电池基材层2，正电极层3和有效面积4，所述聚光光伏电池基材层2一面覆上负电极层1，另一面覆上正电极层3，所述负电极层1之外的部分为有效面积4，所述负电极层1为一平整L字形形状，负电极层1和聚光光伏电池基材层2其中两个相邻端面完全重合，这样就完全利用了聚光光伏电池基材层，从而达到节约聚光光伏电池基材层基材材料的目的。
本发明中，作为变行实施例，聚光光伏电池芯片的正、负电极层也可以交换过来设定制作，负电极层和聚光光伏电池基材层其中任意两个相邻端面完全重合，故本发明的权利保护范围以权利要求书限定的范围为准。

Claims (5)

1.一种L型聚光光伏电池芯片，其特征是，它包括负电极层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极层，另一面覆上正电极层，所述负电极层之外的部分为有效面积。
2.根据权利要求1所述的一种L型聚光光伏电池芯片，其特征是，所述负电极层为一平整L字形形状，负电极层和聚光光伏电池基材层其中两个相邻端面完全重合。
3.根据权利要求1所述的一种L型聚光光伏电池芯片，其特征是，所述聚光光伏电池基材层为GaInP（磷化铟嫁）/GaAs（砷化镓）/Ge（锗）三层组合体。
4.根据权利要求1所述的一种L型聚光光伏电池芯片，其特征是，所述正电极层为一完全密封的平面，正电极层面积形状和聚光光伏电池基材层面积形状完全一样。
5.根据权利要求1所述的一种L型聚光光伏电池芯片，其特征是，所述有效面积为正方形形状。
CN201710125585.3A 2017-03-04 2017-03-04 一种l型聚光光伏电池芯片 Pending CN106847947A (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996730A (zh) * 2014-06-11 2014-08-20 成都聚合科技有限公司 一种聚光太阳能电池
CN103997292A (zh) * 2014-06-11 2014-08-20 成都聚合科技有限公司 一种高效率聚光太阳能电池片

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996730A (zh) * 2014-06-11 2014-08-20 成都聚合科技有限公司 一种聚光太阳能电池
CN103997292A (zh) * 2014-06-11 2014-08-20 成都聚合科技有限公司 一种高效率聚光太阳能电池片

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