CN106847661B - 一种等离子体源以及镀膜机 - Google Patents
一种等离子体源以及镀膜机 Download PDFInfo
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- CN106847661B CN106847661B CN201710054054.XA CN201710054054A CN106847661B CN 106847661 B CN106847661 B CN 106847661B CN 201710054054 A CN201710054054 A CN 201710054054A CN 106847661 B CN106847661 B CN 106847661B
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- plasma
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- electrode
- plasma source
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- 239000011248 coating agent Substances 0.000 title claims abstract description 20
- 238000000576 coating method Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 49
- 230000008569 process Effects 0.000 claims abstract description 42
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 230000001133 acceleration Effects 0.000 claims abstract description 3
- 239000002826 coolant Substances 0.000 claims description 19
- 230000009471 action Effects 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000752 ionisation method Methods 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 description 100
- 239000007789 gas Substances 0.000 description 67
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 29
- 230000005684 electric field Effects 0.000 description 22
- 230000000694 effects Effects 0.000 description 8
- 230000006978 adaptation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000019643 circumnutation Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710054054.XA CN106847661B (zh) | 2017-01-24 | 2017-01-24 | 一种等离子体源以及镀膜机 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710054054.XA CN106847661B (zh) | 2017-01-24 | 2017-01-24 | 一种等离子体源以及镀膜机 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106847661A CN106847661A (zh) | 2017-06-13 |
CN106847661B true CN106847661B (zh) | 2018-11-20 |
Family
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Family Applications (1)
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CN201710054054.XA Active CN106847661B (zh) | 2017-01-24 | 2017-01-24 | 一种等离子体源以及镀膜机 |
Country Status (1)
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CN (1) | CN106847661B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109841471B (zh) * | 2017-11-24 | 2021-12-17 | 北京北方华创微电子装备有限公司 | 分离正负离子的装置、成膜设备及腔室清洗方法 |
CN108878249B (zh) * | 2018-06-19 | 2020-01-17 | 大连理工大学 | 一种脉冲潘宁放电等离子体发生装置 |
CN113846317B (zh) * | 2021-09-24 | 2024-06-25 | 中山市博顿光电科技有限公司 | 电离腔室、射频离子源及其控制方法 |
CN114258182B (zh) * | 2021-12-17 | 2022-11-04 | 离子束(广州)装备科技有限公司 | 会切场离子源及离子束产生方法 |
CN115354289B (zh) * | 2022-08-26 | 2023-09-05 | 松山湖材料实验室 | 一种离子源辅助沉积***、沉积方法及真空镀膜设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003059415A (ja) * | 2001-08-10 | 2003-02-28 | National Institute Of Advanced Industrial & Technology | プラズマイオン源装置 |
JP5257399B2 (ja) * | 2010-04-16 | 2013-08-07 | 日新イオン機器株式会社 | イオン源及びイオン注入装置 |
JP5505731B2 (ja) * | 2011-03-10 | 2014-05-28 | 日新イオン機器株式会社 | イオン源 |
JP6276919B2 (ja) * | 2013-02-01 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および試料台 |
CN104269336B (zh) * | 2014-09-04 | 2016-08-31 | 兰州空间技术物理研究所 | 一种离子推力器放电室磁极结构及其设计方法 |
CN104411082B (zh) * | 2014-11-12 | 2017-12-19 | 中国科学院深圳先进技术研究院 | 等离子源***和等离子生成方法 |
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CN106847661A (zh) | 2017-06-13 |
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GR01 | Patent grant | ||
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Effective date of registration: 20181224 Address after: 065201 Hebei Xingyuan Nonferrous Metal Material Co., Ltd. in Yanjiao High-tech Zone of Sanhe City, Langfang City, Hebei Province Patentee after: SANHE HENG YUE VACUUM EQUIPMENT Co.,Ltd. Address before: Room 5409, 5th floor, Shenchang Building, 51 Zhichun Road, Haidian District, Beijing 100080 Patentee before: BEIJING DANHUA TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230809 Address after: No. 1800, Panyuan Road, Changxing Town, Chongming District, Shanghai 202150 (Shanghai Taihe Economic Development Zone) Patentee after: Shanghai Huidarong Optoelectronics Co.,Ltd. Address before: 065201 Hebei Xingyuan Nonferrous Metal Material Co., Ltd. in Yanjiao High-tech Zone of Sanhe City, Langfang City, Hebei Province Patentee before: SANHE HENG YUE VACUUM EQUIPMENT Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20240229 Address after: Room 103, 1st Floor, Building B2, Phase I, Changsha E Center, No. 18 Xiangtai Road, Liuyang Economic and Technological Development Zone, Changsha City, Hunan Province, 410000 Patentee after: Changsha Yuanrong Technology Co.,Ltd. Country or region after: China Address before: No. 1800, Panyuan Road, Changxing Town, Chongming District, Shanghai 202150 (Shanghai Taihe Economic Development Zone) Patentee before: Shanghai Huidarong Optoelectronics Co.,Ltd. Country or region before: China |