CN106824833B - Resistor screening process - Google Patents
Resistor screening process Download PDFInfo
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- CN106824833B CN106824833B CN201710114168.9A CN201710114168A CN106824833B CN 106824833 B CN106824833 B CN 106824833B CN 201710114168 A CN201710114168 A CN 201710114168A CN 106824833 B CN106824833 B CN 106824833B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/34—Sorting according to other particular properties
- B07C5/344—Sorting according to other particular properties according to electric or electromagnetic properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/02—Measures preceding sorting, e.g. arranging articles in a stream orientating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a resistor screening process method, and relates to the field of electronic elements. According to the resistor screening process method, a resistor is baked for a preset first time by using an oven in a preset first temperature range, if an electroplating barrier layer of the resistor is defective, a phenomenon of slow blending between an electrode layer and a surface tin-lead layer of the resistor occurs, so that the resistance of the resistor is changed, and whether the resistance of the resistor is in a preset resistance value range is measured; if the resistance of the resistor is not in the preset resistance value range, determining the resistor as a defective product, thereby effectively eliminating the defective resistor and improving the qualification rate of the resistor when leaving the factory.
Description
Technical Field
The invention relates to the field of electronic elements, in particular to a resistor screening process method.
Background
The chip resistor is also called a surface mount resistor, and is a new generation of leadless or short-lead micro electronic component suitable for Surface Mount Technology (SMT) like other chip components (SMC and SMD), and the welding surfaces of the leading-out ends of the chip resistor are on the same plane. A chip VARISTOR (VARISTOR) is a type of VARISTOR that is an electrical surge protection device made with zinc oxide nonlinear resistive elements as the core. The zinc oxide nonlinear resistor element is a compound semiconductor element which is made by taking zinc oxide (zn 0) as a main body material, adding various other microelements and adopting a ceramic process. Its fundamental characteristic is the nonlinearity of the current-voltage relationship. When the voltage applied to the two ends of the capacitor is lower than a certain threshold voltage, namely 'voltage sensitive voltage', the resistance value of the capacitor is extremely large and is megaohm; when the voltage applied to both ends of the resistor exceeds the voltage-sensitive voltage, the resistance value drops rapidly along with the voltage increase, and the resistance value can be as small as ohm and milliohm.
In the prior art, the chip resistor electrode part is formed by three layers in total. The first layer is a silver layer. The chip resistor is formed by adopting a screen printing process and sintering at high temperature, wherein the second layer is an electroplated nickel layer, and the third layer is an electroplated tin-lead layer, and is used for welding the chip resistor and the circuit board. The surface coating is usually a pure tin coating or a tin-lead coating due to the mounting requirements. However, since the surface mount component has a conductive portion, precious metal gold, silver, or the like is generally used as an electrode, but metallic tin melted by a precious metal material during soldering is melted with each other, and therefore a plating barrier layer (nickel layer or copper layer) is required between the precious metal electrode and the metallic tin. If the electroplating uniformity of the barrier layer is poor, the situation that the barrier layer (nickel layer) is not electroplated completely only occurs in the individual products, and the problem that the bottom electrode is fused with molten tin in the welding process and disappears in the welding process can occur, so that the electronic component is broken.
Disclosure of Invention
The present invention aims to provide a resistor screening process which aims to improve the above problems.
The invention provides a technical scheme that:
the embodiment of the invention provides a resistor screening process method, which comprises the following steps of:
baking the resistor for a preset first time by using an oven in a preset first temperature range;
measuring whether the resistance of the resistor is within a preset resistance value range;
and if the resistance of the resistor is not in the preset resistance value range, determining the resistor as a defective product.
Further, after the step of measuring whether the resistance of the resistor is within a preset range, the resistor screening process method further includes:
if the resistor is in the preset resistance value range, the resistor is circularly in different temperature environments, and preset second time is respectively maintained;
measuring whether the resistance of the resistor is within a preset resistance value range or not again;
and if the resistance of the resistor is not in the preset resistance value range, determining the resistor as a defective product.
Further, the different temperature environments comprise a second test temperature and a third test temperature, the temperature range of the second test temperature is 110-150 ℃, and the temperature range of the third test temperature is-50-80 ℃.
Further, the second test temperature is 125 degrees and the third test temperature is-65 degrees.
Further, the resistor includes an electrode layer, and after the step of measuring whether the resistance of the resistor is within a preset range, the resistor screening process method further includes:
if the resistor is in the preset resistance value range, the resistor is circularly in different temperature environments, and preset second time is respectively maintained;
identifying whether the appearance of the electrode layer is changed;
and if the appearance of the electrode layer changes, determining the resistor as a defective product.
Further, the preset first temperature range is 140-160 degrees, and the preset first time is 96-104 hours.
Further, the first temperature is 150 degrees, and the second time is 100h.
Further, the step of baking the resistor for a preset first time by using the oven in a preset first temperature range includes:
and baking the resistor for a preset first time by using an oven filled with inert gas in a preset first temperature range.
Further, the resistor includes an electrode layer, and after the step of measuring whether the resistance of the resistor is within a preset range, the resistor screening process method further includes:
if the resistance of the resistor is within the preset resistance value range, whether the appearance of the electrode layer is changed or not is identified;
and if the appearance of the electrode layer changes, determining the resistor as a defective product.
Further, the resistor includes a nickel plating layer, and after the step of measuring whether the resistance of the resistor is within a preset resistance value range, the method further includes:
and if the resistor falls off relative to the magnet, determining the resistor as a defective product.
The resistor screening process method provided by the invention has the beneficial effects that: baking the resistor for a preset first time by using an oven under a preset first temperature range, if the electroplating barrier layer of the resistor is defective, slowly fusing an electrode layer of the resistor and a surface tin-lead layer, so that the resistance of the resistor is changed, and measuring whether the resistance of the resistor is in a preset resistance value range or not; if the resistance of the resistor is not in the preset resistance value range, determining the resistor as a defective product, thereby effectively eliminating the defective resistor and improving the qualification rate of the resistor when leaving the factory.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 and fig. 2 are flowcharts of a resistor screening process method according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a resistor according to an embodiment of the present invention.
Icon: 201-electrode plate; 202-an electrode layer; 203-electroplating a barrier layer; 204—surface tin-lead layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on those shown in the drawings, or those conventionally put in place when the inventive product is used, or those conventionally understood by those skilled in the art, merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Examples
Referring to fig. 1 and 2, in the resistor screening process method provided by the embodiment of the present invention, as shown in fig. 1, the resistor screening process method includes:
step S101: and baking the resistor for a preset first time by using the oven under a preset first temperature range.
Specifically, in the present embodiment, as shown in fig. 3, the resistor includes an electrode plate 201, an electrode layer 202, a plating barrier layer 203, and a surface tin-lead layer 204, wherein the plating barrier layer 203 is located between the electrode layer 202 and the surface tin-lead layer 204. The preset first temperature range is 140-160 ℃, and the preset first time is 96-104 h. If the resistor is in an excessively high ambient temperature or baked for too long, the plating barrier layer 203 may be damaged by high temperature even if the resistor is good, so that the electrode layer 202 and the surface tin-lead layer 204 are fused with each other, and the original good is changed into a defective product; if the environment temperature of the resistor is low or the baking time of the resistor is short, defective products cannot be accurately detected, and through the inventor test, the preset first temperature range is set to be 140-160 ℃, and the preset first time is 96-104 h, so that the resistor can be accurately detected without being damaged. In this embodiment, the first temperature is 150 degrees, and the second time is 100 hours. Of course, in the present embodiment, the preset first temperature range may be not only 140 to 160 degrees, and the preset first time may be not only 96 to 104 hours, but also other threshold ranges, which is not limited herein.
More preferably, the resistor is baked for a preset first time using an oven filled with an inert gas at a preset first temperature range.
In this embodiment, the baking oven filled with inert gas is used for baking the resistor for a preset first time, so that oxidation of the tin-lead layer 204 on the surface of the resistor can be avoided, and the quality of the resistor is better ensured.
Step S102: whether the resistance of the measuring resistor is within a preset resistance value range, if so, step S103 is performed, and if not, step S104 is performed.
Step S103: the resistor is determined to be defective.
In this embodiment, the resistor may be measured by using an instrument such as a multimeter, and considering that the preset resistance value range is too small, detection of some defective products may be missed, and the preset resistance value range is too large, and detection of some defective products may also be missed, so that the preset resistance value range is ±1% of the original resistance value, and defective products, for example, the original resistance value is 10Ω resistor, and the resistance precision is ±1%, that is, the preset resistance value range is 9.9Ω -10.1Ω.
Step S104: it is recognized whether the appearance of the electrode layer 202 is changed, if so, step S105 is performed, and if not, step S106 is performed.
Step S105: the resistor is determined to be defective.
Step S106: the resistor is cyclically exposed to different temperature environments and respectively maintained for a preset second time.
Specifically, the different temperature environments comprise a second test temperature and a third test temperature, the temperature range of the second test temperature is 110-150 ℃, the temperature range of the third test temperature is-50-80 ℃, and the preset second time is 20-40 min. In this embodiment, the second test temperature is 125 degrees, the third test temperature is-65 degrees, and the resistor is subjected to temperature impact 5 times with a high temperature of 125 degrees and a low temperature of-65 degrees, respectively, cyclically, and is maintained for 30min each time.
As shown in fig. 2, the resistor screening process method further includes:
step S107: again, whether the resistance of the resistor is within a preset resistance value range is measured, and if not, step S108 is performed, and if yes, step S109 is performed.
Step S108: the resistor is determined to be defective.
After the temperature impact is finished, if the resistor is not in the preset resistance value range, the resistor is judged to be defective and should be screened out, so that the qualification rate of the resistor is further improved.
Step S109: it is recognized whether the appearance of the electrode layer 202 is changed, if so, step S110 is performed, and if not, step S111 is performed.
Step S110: the resistor is determined to be defective.
In this embodiment, for example, the high-definition camera is used to photograph the electrode layer 202 of the resistor, and the electronic terminal or the server compares the photographed picture with the pre-stored normal picture, if the appearance of the electrode layer 202 changes, for example, the electrode layer 202 located in the electrode plate 201 drops off to expose the ceramic substrate, if the appearance changes, the resistor is determined to be defective, so that the qualification rate of the resistor is further improved.
In this embodiment, the resistor includes a nickel plating layer, and the resistor screening process method further includes:
step S111: the resistor is attracted by a magnet,
step S112: it is judged whether or not the resistor is detached from the magnet, and if so, step S113 is performed.
Step S113: the resistor is determined to be defective.
Considering that the nickel plating layer has certain magnetism, if the nickel plating layer is damaged, the adsorption capacity of the magnet to the resistor is poor, and if the resistor falls off relative to the magnet, the resistor is a defective product, and the qualification rate of the resistor is further improved.
In addition, in the present embodiment, the manufacturing process of the resistor is as follows:
firstly, batching: steel balls, plating materials (nickel, plating) and electrode plates 201 of predetermined sizes and proportions are added into the plating barrel according to the volume of the portion of the electrode plates 201 to be plated and the number of the electrode plates 201.
The electrode plate 201 of the resistor uses ceramic as a main material, so that a metal co-plating (steel ball) needs to be added as a conductive material to conduct current during the electroplating process. The steel balls are conductive, and the round shape is easy to turn over and move in the electroplating process, so that the electroplating of the electrode plate 201 is facilitated.
Step two, pretreatment: the alkaline solution is adopted to soak the product to remove greasy dirt on the surface of the electrode plate 201, and the acidic solution is adopted to corrode the surface oxide, eliminate and clean the surface oxide.
Since the quality of the electrode plate 201 directly affects the binding force of the plating, the electrode plate 201 needs to remove the surface oil stain and the oxide film before plating.
Thirdly, electroplating: the plating material is plated on the electrode plate 201 using a plating cylinder to form a plating barrier 203.
Fourth, surface tin-lead layer 204: the solder layer is electroplated onto the plating barrier 203.
The surface tin-lead layer 204 is plated with tin and tin-lead alloy, and the electroplating barrier layer 203 has the main function of enabling the electronic components to have tin solderability and is suitable for assembling a circuit board.
Fifth, post-treatment: and soaking the roller for 3-5 min (without electrifying) by adopting trisodium phosphate solution, and cleaning after finishing.
The post-treatment aims to make the resistor components after the surface tin-lead layer 204 achieve the purposes of brightness and corrosion resistance.
Sixth step, separating: the electroplated electronic components are separated from the accompanying steel balls by means of wafer sorting.
Specifically, the round steel ball and the rectangular resistor are separated by vibration using a dedicated triangular plate apparatus.
In summary, according to the resistor screening process provided by the invention, the resistor is baked for a preset first time by using the oven under a preset first temperature range, if the electroplating barrier layer 203 of the resistor has defects, the electrode layer 202 and the surface tin-lead layer 204 of the resistor can slowly blend, so that the resistance of the resistor changes, and at the moment, whether the resistance of the resistor is within a preset resistance value range is measured; if the resistance of the resistor is not in the preset resistance value range, determining the resistor as a defective product, thereby effectively eliminating the defective resistor and improving the qualification rate of the resistor when leaving the factory.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A resistor screening process, the resistor screening process comprising:
baking the resistor for a preset first time by using an oven filled with inert gas in a preset first temperature range; measuring whether the resistance of the resistor is within a preset resistance value range;
if the resistance of the resistor is not in the preset resistance value range, determining the resistor as a defective product;
after the step of measuring whether the resistance of the resistor is within the preset range, the resistor screening process method further includes:
if the resistor is in the preset resistance value range, the resistor is circularly in different temperature environments, and preset second time is respectively maintained;
measuring whether the resistance of the resistor is within a preset resistance value range or not again;
if the resistance of the resistor is not in the preset resistance value range, determining the resistor as a defective product; the resistor comprises an electrode layer, and after the step of measuring whether the resistance of the resistor is within a preset range, the resistor screening process method further comprises the following steps:
if the resistor is in the preset resistance value range, the resistor is circularly in different temperature environments, and preset second time is respectively maintained;
identifying whether the appearance of the electrode layer is changed;
and if the appearance of the electrode layer changes, determining the resistor as a defective product.
2. The resistor screening process according to claim 1, wherein the different temperature environments comprise a second test temperature and a third test temperature, the second test temperature ranges from 110 degrees to 150 degrees, and the third test temperature ranges from-50 degrees to-80 degrees.
3. The resistor screening process of claim 2, wherein the second test temperature is 125 degrees and the third test temperature is-65 degrees.
4. The resistor screening process according to claim 1, wherein the preset first temperature range is 140-160 degrees, and the preset first time is 96-104 h.
5. The resistor screening process of claim 4, wherein the first temperature is 150 degrees and the predetermined first time is 100 hours.
6. The resistor screening process of claim 1, wherein the resistor includes an electrode layer, and wherein after the step of measuring whether the resistance of the resistor is within a predetermined range, the resistor screening process further comprises:
if the resistance of the resistor is within the preset resistance value range, whether the appearance of the electrode layer is changed or not is identified;
and if the appearance of the electrode layer changes, determining the resistor as a defective product.
7. The resistor screening process of claim 1, wherein the resistor comprises a nickel plating layer, and after the step of measuring whether the resistance of the resistor is within a predetermined resistance value range, the method further comprises:
and if the resistor falls off relative to the magnet, determining the resistor as a defective product.
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| CN111346843B (en) * | 2020-03-06 | 2022-04-12 | 湖北亿纬动力有限公司 | Screening method of lithium battery cell, storage medium and testing equipment |
| CN112986749A (en) * | 2021-04-30 | 2021-06-18 | 成都宏明电子股份有限公司 | NTC thermistor chip screening test auxiliary fixtures with surface electrode |
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| CN101861758A (en) * | 2007-11-16 | 2010-10-13 | 松下电器产业株式会社 | Heating-element unit, and heating device |
| CN101562050A (en) * | 2008-01-07 | 2009-10-21 | 旺宏电子股份有限公司 | Phase change memory dynamic resistance test and manufacturing methods |
| CN102003946A (en) * | 2010-09-02 | 2011-04-06 | 北京航空航天大学 | High-temperature three-dimensional digital image related measurement system and measurement method |
| CN202512173U (en) * | 2012-01-06 | 2012-10-31 | 北京科技大学 | Apparatus for measuring molten salt electrical conductivity by utilizing four-electrode method |
| CN103525199A (en) * | 2013-10-24 | 2014-01-22 | 北京印刷学院 | Preparation method for heating-post-treatment-free nanometer copper printing ink |
| CN105785222A (en) * | 2016-04-01 | 2016-07-20 | 中国振华集团云科电子有限公司 | Plug-in fuse secondary quick screening method |
| CN205958650U (en) * | 2016-08-17 | 2017-02-15 | 上海电气钠硫储能技术有限公司 | Sodium -sulfur cell solid electrolyte pipe sodium ion resistivity test device |
| CN106199199A (en) * | 2016-09-30 | 2016-12-07 | 山东齐星新能源科技有限责任公司 | A kind of detection method of flexible packing lithium ion battery aluminum plastic film corrosion |
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