CN106816558B - Top radiation organic EL display panel, its production method and display device - Google Patents
Top radiation organic EL display panel, its production method and display device Download PDFInfo
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- CN106816558B CN106816558B CN201710243869.2A CN201710243869A CN106816558B CN 106816558 B CN106816558 B CN 106816558B CN 201710243869 A CN201710243869 A CN 201710243869A CN 106816558 B CN106816558 B CN 106816558B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
Abstract
The invention discloses a kind of top radiation organic EL display panel, its production method and display device, which includes: that multiple film layers are sequentially formed on underlay substrate to constitute the thin film transistor (TFT) that surface has multiple bulge-structures；Flatness layer is formed on thin film transistor (TFT)；Using the mask plate with the figure that matches with multiple bulge-structures, photoetching process is carried out to flatness layer, to planarize flatness layer.Production method provided in an embodiment of the present invention, by using the mask plate with the figure that matches with multiple bulge-structures in film crystal pipe surface, photoetching process is carried out to flatness layer, to planarize the flatness layer, the flat performance that can be improved flatness layer keeps the thickness of the OLED film in flat upper production more uniform, thus, uniformity of luminance in pixel can be improved, alleviate the granular sensation of OLED device.
Description
Technical field
The present invention relates to field of display technology, espespecially a kind of top radiation organic EL display panel, its production method
And display device.
Background technique
In display field, organic electroluminescence device (Organic Light-Emitting Diode, OLED) relative to
Liquid crystal display (Liquid Crystal Display, LCD), with self-luminous, reaction is fast, visual angle is wide, brightness is high, color
The advantages that gorgeous, frivolous, it is considered to be next-generation display technology.According to the difference of coupling luminous mode, OLED device can be divided into
Top emission OLED device and bottom emitting OLED device.Relative to bottom emitting OLED, top emitting OLED combines use with TFT transistor
It will not influence the aperture opening ratio of device when active-matrix display, therefore the OLED of this emission structure at top is more suitably applied to actively
Matrix is shown.For current research conditions, top emission OLED device active display field application also by it is many because
The restriction of element, such as coupling luminous rate, excitation purity, viewing angle characteristic.
In top emission OLED device, in order to be made on thin film transistor (TFT) (Thin-film transistor, TFT)
OLED device functional layer needs to make one layer of flatness layer on TFT, however, the situation bad in flatness layer planarization performance
Under, the surface of flatness layer still can have uneven phenomenon, thus lead to occur uneven phenomenon in pixel region.
The thin film-forming method of OLED device mainly has vapor deposition processing procedure and solution process.Be deposited processing procedure small size application more at
Ripe, vapor deposition EL pellicle film flatness is preferable.The thin film-forming method of solution process mainly has inkjet printing, nozzle application, spin coating, silk
Wire mark brush etc., wherein inkjet printing technology is since its stock utilization is higher, it is in large size to may be implemented, it is considered to be large scale
The important way of OLED device realization volume production.The OLED device of inkjet printing, the thickness uniformity of the OLED film in pixel are non-
Often important, it has a major impact the service life of OLED device and efficiency.Due to the free trickling property feature of drop in solution process, open
Flatness is affected to the distribution of ink droplet drop in oral area pixel, if there are segment differences on flatness layer, further influences OLED film
The thickness uniformity of layer causes uniformity of luminance in device pixel uneven from the point of view of device is lighted, and granular sensation is obvious.
Summary of the invention
The embodiment of the invention provides a kind of top radiation organic EL display panel, its production method and display dresses
Set, to solve it is existing in the prior art due to flatness layer planarization performance it is bad caused by pixel non-uniform light ask
Topic.
The embodiment of the invention provides a kind of production methods of top radiation organic EL display panel, comprising:
Multiple film layers are sequentially formed on underlay substrate to constitute the thin film transistor (TFT) that surface has multiple bulge-structures；
Flatness layer is formed on the thin film transistor (TFT)；
Using the mask plate with the figure that matches with multiple bulge-structures, photoetching work is carried out to the flatness layer
Skill, to planarize the flatness layer.
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, in the film
It is formed after flatness layer on transistor, further includes:
Photoetching process is carried out to the flatness layer, to form multiple via holes in non-display area.
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, described in planarization
The photoetching process of flatness layer is with a photoetching process with the photoetching process for forming multiple via holes；Wherein,
The mask plate that the photoetching process uses includes transmission region and non-transparent region；
And the light transmittance of the corresponding transmission region of bulge-structure and transmission region corresponding with the via hole is different.
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, the flatness layer
Material be positive photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, photoetching is carried out to the flatness layer
Technique is specifically included with planarizing the flatness layer:
Using the mask plate with figure identical as multiple bulge-structures, photoetching process is carried out to the flatness layer,
To planarize the flatness layer.
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, the flatness layer
Material be negative photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, photoetching is carried out to the flatness layer
Technique is specifically included with planarizing the flatness layer:
Using the mask plate having with multiple bulge-structure complementary graphs, photoetching process is carried out to the flatness layer,
To planarize the flatness layer.
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, in the use
Mask plate with the figure that matches with multiple bulge-structures carries out photoetching process to the flatness layer, to planarize
Before stating flatness layer, further includes:
The height for measuring each bulge-structure is determined according to the height of each bulge-structure and is carried out to the flatness layer
Light exposure, time for exposure and the developing time of photoetching.
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, the protrusion knot
The height of structure is between 10nm-1 μm；
The light exposure is 10mJ/cm2-500mJ/cm2, the time for exposure is 30s-150s, and the developing time is
10s-200s。
In one possible implementation, in above-mentioned production method provided in an embodiment of the present invention, further includes:
The flatness layer after photoetching process is toasted.
The embodiment of the invention also provides a kind of top radiation organic EL display panel, the top emitting organic electroluminescence
Light emitting display panel is made of above-mentioned production method.
The embodiment of the invention also provides a kind of display devices, including above-mentioned top radiation organic EL display panel.
The present invention has the beneficial effect that:
The embodiment of the invention provides a kind of top radiation organic EL display panel, its production method and display dresses
It sets, which includes: that multiple film layers are sequentially formed on underlay substrate to constitute surface with the thin of multiple bulge-structures
Film transistor；Flatness layer is formed on thin film transistor (TFT)；It is right using the mask plate with the figure that matches with multiple bulge-structures
Flatness layer carries out photoetching process, to planarize flatness layer.Production method provided in an embodiment of the present invention, by using have with it is thin
Multiple bulge-structures on film transistor surface match the mask plate of figure, photoetching process are carried out to flatness layer, with planarization
The flatness layer can be improved the flat performance of flatness layer, keep the thickness of the OLED film in flat upper production more uniform, because
And uniformity of luminance in pixel can be improved, alleviate the granular sensation of OLED device.
Detailed description of the invention
Fig. 1 is a kind of process of the production method of top radiation organic EL display panel provided in an embodiment of the present invention
Figure；
Fig. 2 a is one of the structural schematic diagram of production method provided in an embodiment of the present invention；
Fig. 2 b is the second structural representation of production method provided in an embodiment of the present invention；
Fig. 2 c is the third structural representation of production method provided in an embodiment of the present invention；
Fig. 2 d is the four of the structural schematic diagram of production method provided in an embodiment of the present invention；
Fig. 3 is the top view of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 4 a and Fig. 4 b are respectively the height distribution map after forming flatness layer in corresponding diagram 3 at dotted line AA ' and BB '；
Wherein, 101, underlay substrate；102, thin film transistor (TFT)；103, bulge-structure；104, flatness layer；105, mask plate；
106, boss；200, sub-pixel unit.
Specific embodiment
For existing in the prior art due to non-uniform light in the bad caused pixel of flatness layer planarization performance
Problem, the embodiment of the invention provides a kind of top radiation organic EL display panel, its production method and display devices.
With reference to the accompanying drawing, the specific embodiment of backlight module provided in an embodiment of the present invention and display device is carried out
It explains in detail.The thickness of each film layer and shape do not reflect actual proportions in attached drawing, and purpose is schematically illustrate the content of present invention.
The embodiment of the invention provides a kind of production methods of top radiation organic EL display panel, as shown in Figure 1,
Include:
S101, multiple film layers are sequentially formed on underlay substrate to constitute the film crystal that surface has multiple bulge-structures
Pipe；
S102, flatness layer is formed on thin film transistor (TFT)；
S103, using the mask plate with the figure that matches with multiple bulge-structures, photoetching process is carried out to flatness layer, with
Planarize flatness layer.
Production method provided in an embodiment of the present invention is tied by using having with multiple protrusions in film crystal pipe surface
Structure matches the mask plate of figure, carries out photoetching process to flatness layer, to planarize the flatness layer, can be improved the flat of flatness layer
Smooth performance keeps the thickness of the OLED film in flat upper production more uniform, therefore, it is possible to uniformity of luminance in pixel is improved,
Alleviate the granular sensation of OLED device.
Referring to Fig. 2 a- Fig. 2 d, since the thin film transistor (TFT) 102 on underlay substrate 101 is generally made of multiple film layers, such as
It may include the film layers such as grid, source electrode, drain electrode and gate insulating layer, each film layer has specific figure, multiple film layers
It is superimposed together and just will appear multiple bulge-structures 103, as shown in Figure 2 a, the figure of bulge-structure 103 is by constituting film crystalline substance
What the figure of each film layer of body pipe 102 determined, it, therefore, can be with generally in the height of bulge-structure 103 between 10nm-1 μm
The figure that bulge-structure 103 is determined according to the figure for constituting each film layer of thin film transistor (TFT) 102, so that it is determined that subsequent step
The figure of mask plate in S103.Fig. 3 shows the protrusion knot after making thin film transistor (TFT) 102 in each sub-pixel unit 200
The figure of structure 103, from figure 3, it can be seen that the figure of the bulge-structure 103 in each sub-pixel unit 200 is essentially identical.
Flatness layer 104 is generally made in above-mentioned steps S102 of resinous material (such as photoresist), is made flat
The material of layer 104 generally has certain viscosity and mobility, thus bulge-structure 103 is corresponding on the flatness layer of formation 104
Position at also have the boss 106 of certain altitude, as shown in Figure 2 b, and the height of 104 upper projecting portion position 106 of flatness layer
It, can be according to the height of bulge-structure 103 on thin film transistor (TFT) 102 less than the height of bulge-structure 103 on thin film transistor (TFT) 102
And the thickness of flatness layer 104, to calculate to obtain the height of 104 upper projecting portion position 106 of flatness layer.By thin in above-mentioned steps S101
The structure of film transistor 102 can determine the mask plate 105 in step S103, since flatness layer 104 is generally resinous material,
It is therefore possible to use the boss 106 on photoetching process removal flatness layer 104.
Fig. 4 a and Fig. 4 b are respectively the height distribution map after forming flatness layer 104 in corresponding diagram 3 at dotted line AA ' and BB ', figure
In 4a, H is indicated highly, the position of X expression in the horizontal direction, and in Fig. 4 b, H indicates height, and Y indicates position in the vertical direction
It sets.In the specific implementation, the height point of each position of flatness layer 104 can according to the mode similar with Fig. 4 a and Fig. 4 b, be obtained
Cloth is distributed the light transmittance to determine transmission region in mask plate, according to the height of the obtained each position of flatness layer 104 with positivity
For photoresist, the light transmittance that the biggish position of height value can be set is higher, and the light transmittance of the lesser position of height value is lower,
Thus, make the more of the biggish position removal of height value on flatness layer 104, the lower position removal of height value it is less, thus
Flatness layer 104 is set to tend to be flat.It is thus subsequent when making functional layer on flatness layer 104, no matter using vapor deposition processing procedure or molten
Liquid processing procedure, obtained functional layer all can be relatively uniform, to avoid the OLED device in uneven thickness that causes due to functional layer
Non-uniform light.
In practical application, as shown in fig. 4 a, being covered when the height of the boss 106 on flatness layer 104 is essentially identical
The light transmittance of each transmission region can be set to identical in template, if on flatness layer 104 each boss 106 height difference compared with
When more, the mean value of each height can be taken unified transmitance is arranged, can also be respectively set according to the height of different location
Rate is crossed, herein without limitation.
Further, after above-mentioned steps S102, can also include:
Photoetching process is carried out to the flatness layer, to form multiple via holes in non-display area.
Multiple via holes are formed by the non-display area on flatness layer, the anode and thin film transistor (TFT) of OLED device can be made
Connection.It should be noted that the photoetching process of production via hole can be before the photoetching process of planarization flatness layer, it can also be
After the photoetching process for planarizing flatness layer, it can also make, the sequence of Twi-lithography is not defined herein simultaneously.
Further, the photoetching process for planarizing the flatness layer, the photoetching process with the multiple via holes of formation are
With a photoetching process；Wherein,
The mask plate that the photoetching process uses includes transmission region and non-transparent region；
And the light transmittance of the corresponding transmission region of bulge-structure and transmission region corresponding with the via hole is different.
By using special mask plate, Twi-lithography technique is merged into a photoetching process, a work can be saved
Skill, so that save the cost, specifically, the height of general bulge-structure are less than the thickness of flatness layer, and via hole is equal to flatness layer
Thickness, so, the transmitance that the transmission region of via hole corresponding position on mask plate can be set is higher, such as can be set to
100%, 95% or 90% etc., and the transmitance of the transmission region of bulge-structure corresponding position is lower, for example, 50%, 45% or
60% etc., the numerical value of specific transmitance needs to be determined according to the height of bulge-structure and the thickness of flatness layer.
In above-mentioned steps S103, the figure of mask plate 105 and the figure of multiple bulge-structures 103 match, thus to flat
Smooth layer 104, which carries out photoetching process, can remove the boss 106 on flatness layer 104, to planarize flatness layer 104, have
When body is implemented, the figure of mask plate 105 is related with the performance of the material of flatness layer 104, including following two situation:
Situation one: the material of flatness layer 104 is positive photoresist；
Above-mentioned steps S103 can be specifically included:
Using the mask plate 105 with figure identical as multiple bulge-structures 103, photoetching process is carried out to flatness layer 104,
To planarize flatness layer 104, as shown in Figure 2 c.
Due to dissolving in corresponding developer solution after positive photoresist exposure, using figure identical as bulge-structure 103
Mask plate 105 flatness layer 104 is exposed after, flatness layer 104 corresponds to bulge-structure 103 and is partially soluble in developer solution,
The thus boss 106 on removal flatness layer 104, to improve the flat performance of flatness layer 104.
Situation two: the material of flatness layer 104 is negative photoresist；
Above-mentioned steps S103 can be specifically included:
Using the mask plate 105 having with multiple 103 complementary graphs of bulge-structure, photoetching process is carried out to flatness layer 104,
To planarize flatness layer 104, as shown in Figure 2 d.
Due to not dissolving in developer solution after negative photoresist exposure, using the mask with 103 complementary graph of bulge-structure
After plate 105 is exposed flatness layer 104, the part (part in addition to bulge-structure 103) that flatness layer 104 is exposed is insoluble
In developer solution, and flatness layer 104 is partially soluble in developer solution corresponding to bulge-structure 103, so as to remove on flatness layer 104
Boss 106, improve the flat performance of flatness layer 104.
Further, in order to which the boss more accurately on removal flatness layer can be with before above-mentioned steps S103
Include:
The height for measuring each bulge-structure determines the exposure that photoetching is carried out to flatness layer according to the height of each bulge-structure
Amount, time for exposure and developing time.
In the specific implementation, the height for measuring each bulge-structure may include:
The height of each bulge-structure is measured by the way of step instrument or optic test.
By the height of each bulge-structure of determination, so as to determine removal flatness layer according to the height of each bulge-structure
On boss need light exposure, time for exposure and developing time, so as to further increase the flat of flatness layer
Performance.
In practical application, if the height difference of each bulge-structure is bigger, it can be using special mask plate to flat
Smooth layer is exposed, and the light transmittance of the transmission region of mask plate, such as transparent area can be arranged according to the height of bulge-structure
Domain can be set to the numerical value such as the light transmission of 50% light transmission, 60% or 75%, so that the bulge-structure of different height has different exposures
Amount, thus keep flatness layer more flat.
In the specific implementation, the height of bulge-structure is generally between 10nm-1 μm；
Light exposure is 10mJ/cm2-500mJ/cm2, the time for exposure is 30s-150s (preferably 50s), and developing time is
10s-200s。
More specifically, light exposure is preferably 100mJ/cm2-200mJ/cm2。
Further, in above-mentioned production method provided in an embodiment of the present invention, can also include:
Flatness layer after photoetching process is toasted.
By being toasted to the flatness layer after photoetching process, flatness layer can be made to solidify, the edge of flatness layer can be made
Position further planarizes, to improve the flat performance of flatness layer.
Based on the same inventive concept, the embodiment of the invention also provides a kind of top radiation organic EL display panel,
The top radiation organic EL display panel is made of above-mentioned production method.Since the top radiation organic EL is shown
The principle that panel solves the problems, such as is similar to above-mentioned production method, therefore the implementation of the top radiation organic EL display panel can
With referring to the implementation of above-mentioned production method, overlaps will not be repeated.
Based on the same inventive concept, the embodiment of the present invention provides a kind of display device, including above-mentioned top emitting organic electroluminescence
Light emitting display panel, the display device can be applied to mobile phone, tablet computer, television set, display, laptop, number
Any products or components having a display function such as photo frame, navigator.The principle solved the problems, such as due to the display device with it is above-mentioned
Top radiation organic EL display panel is similar, therefore the implementation of the display device may refer to above-mentioned top emitting organic electroluminescence
The implementation of light emitting display panel, overlaps will not be repeated.
Top radiation organic EL display panel, its production method and display device provided in an embodiment of the present invention are led to
It crosses using the mask plate with the figure that matches with multiple bulge-structures in film crystal pipe surface, photoetching is carried out to flatness layer
Technique can be improved the flat performance of flatness layer to planarize the flatness layer, make the thickness in the OLED film of flat upper production
It is more uniform, therefore, it is possible to improve uniformity of luminance in pixel, alleviate the granular sensation of OLED device.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (8)
1. a kind of production method of top radiation organic EL display panel characterized by comprising
Multiple film layers are sequentially formed on underlay substrate to constitute the thin film transistor (TFT) that surface has multiple bulge-structures；
Flatness layer is formed on the thin film transistor (TFT)；
The light transmittance for determining transmission region in mask plate is distributed according to the height of each position of flatness layer；
Using the mask plate with the figure that matches with multiple bulge-structures, the flatness layer is exposed, work of developing
Skill, to planarize the flatness layer；
It is formed after flatness layer on the thin film transistor (TFT), further includes:
The flatness layer is exposed, developing process, to form multiple via holes in non-display area；
Exposure, the developing process for planarizing the flatness layer are same primary with exposure, the developing process for forming multiple via holes
Exposure, developing process；Wherein,
The mask plate that the exposure, developing process use includes transmission region and non-transparent region；
And the light transmittance of the corresponding transmission region of bulge-structure and transmission region corresponding with the via hole is different.
2. production method as described in claim 1, which is characterized in that the material of the flatness layer is positive photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, the flatness layer is exposed, is shown
Shadow technique is specifically included with planarizing the flatness layer:
Using the mask plate with figure identical as multiple bulge-structures, the flatness layer is exposed, developing process,
To planarize the flatness layer.
3. production method as described in claim 1, which is characterized in that the material of the flatness layer is negative photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, the flatness layer is exposed, is shown
Shadow technique is specifically included with planarizing the flatness layer:
Using the mask plate having with multiple bulge-structure complementary graphs, the flatness layer is exposed, developing process,
To planarize the flatness layer.
4. production method as described in any one of claims 1-3, which is characterized in that it is described using have with it is multiple described convex
Play structure to match the mask plate of figure, the flatness layer is exposed, developing process, with planarize the flatness layer it
Before, further includes:
The height for measuring each bulge-structure exposes the flatness layer according to the determination of the height of each bulge-structure
Light, the light exposure of developing process, time for exposure and developing time.
5. production method as claimed in claim 4, which is characterized in that the height of the bulge-structure is between 10nm-1 μm；
The light exposure is 10mJ/cm2-500mJ/cm2, the time for exposure is 30s-150s, and the developing time is 10s-
200s。
6. production method as described in claim 1, which is characterized in that further include:
The flatness layer after exposure, developing process is toasted.
7. a kind of top radiation organic EL display panel, which is characterized in that the top radiation organic EL display surface
Plate is made of production method as claimed in any one of claims 1 to 6.
8. a kind of display device, which is characterized in that including top radiation organic EL display surface as claimed in claim 7
Plate.
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| CN110034152B (en) * | 2018-01-12 | 2023-08-04 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN110021654B (en) * | 2019-04-24 | 2021-11-09 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN111029387A (en) * | 2019-12-20 | 2020-04-17 | 京东方科技集团股份有限公司 | Manufacturing method of OLED substrate, display device and mask plate |
| CN112331696B (en) * | 2019-12-27 | 2022-12-06 | 广东聚华印刷显示技术有限公司 | Light-emitting device, substrate thereof and manufacturing method |
| CN112271266B (en) * | 2020-10-26 | 2023-05-16 | 合肥京东方卓印科技有限公司 | Film structure, preparation method thereof, display panel and display device |
| CN113013212B (en) * | 2021-02-25 | 2022-07-12 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
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