CN106816558A - Top radiation organic EL display panel, its preparation method and display device - Google Patents
Top radiation organic EL display panel, its preparation method and display device Download PDFInfo
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- CN106816558A CN106816558A CN201710243869.2A CN201710243869A CN106816558A CN 106816558 A CN106816558 A CN 106816558A CN 201710243869 A CN201710243869 A CN 201710243869A CN 106816558 A CN106816558 A CN 106816558A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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Abstract
The invention discloses a kind of top radiation organic EL display panel, its preparation method and display device, the preparation method includes：Multiple film layers are sequentially formed on underlay substrate has the thin film transistor (TFT) of multiple bulge-structures to constitute surface；Flatness layer is formed on thin film transistor (TFT)；Using the mask plate with the figure that matches with multiple bulge-structures, photoetching process is carried out to flatness layer, to planarize flatness layer.Preparation method provided in an embodiment of the present invention, by using the mask plate with the figure that matches with the multiple bulge-structures in film crystal pipe surface, photoetching process is carried out to flatness layer, to planarize the flatness layer, the flat performance of flatness layer can be improved, makes the thickness of the OLED films made on flat more uniform, thus, uniformity of luminance in pixel can be improved, alleviates the granular sensation of OLED.
Description
Technical field
The present invention relates to display technology field, espespecially a kind of top radiation organic EL display panel, its preparation method
And display device.
Background technology
In display field, organic electroluminescence device (Organic Light-Emitting Diode, OLED) relative to
Liquid crystal display (Liquid Crystal Display, LCD), with self-luminous, reaction is fast, visual angle is wide, brightness is high, color
Gorgeous, frivolous the advantages of, it is considered to be Display Technique of future generation.According to the difference of coupling luminous mode, OLED can be divided into
Top emission OLED device and bottom emitting OLED.Relative to bottom emitting OLED, top emitting OLED is combined use with TFT transistors
The aperture opening ratio of device is not interfered with when active-matrix shows, therefore the OLED of this emission structure at top is more suitably applied to actively
Matrix shows.For current research conditions, top emission OLED device the application of active display field also receive it is many because
The restriction of element, such as coupling luminous rate, excitation, viewing angle characteristic.
In top emission OLED device, in order to be made on thin film transistor (TFT) (Thin-film transistor, TFT)
OLED functional layer, it is necessary on TFT make one layer of flatness layer, however, in the not good situation of flatness layer planarization performance
Under, still can there is rough phenomenon in the surface of flatness layer, thus result in and occur rough phenomenon in pixel region.
The thin film-forming method of OLED mainly has evaporation processing procedure and solution process.Evaporation processing procedure small size application more into
Ripe, evaporation EL pellicle film flatness is preferable.The thin film-forming method of solution process mainly has inkjet printing, nozzle application, spin coating, silk
Wire mark brush etc., wherein inkjet technology are because its stock utilization is higher, it is in large size to realize, it is considered to be large scale
OLED realizes the important way of volume production.The OLED of inkjet printing, thickness evenness of the OLED films in pixel is non-
Often important, its life-span and efficiency to OLED has a major impact.Due to the free trickling property feature of drop in solution process, open
Flatness is larger to the distribution influence of ink droplet drop in oral area pixel, if there is segment difference on flatness layer, further influences OLED films
The thickness evenness of layer, causes uniformity of luminance inequality in device pixel from the point of view of device is lighted, and granular sensation is obvious.
The content of the invention
The embodiment of the invention provides a kind of top radiation organic EL display panel, its preparation method and display dress
Put, be used to solve present in prior art due to flatness layer planarization performance it is not good caused by pixel non-uniform light ask
Topic.
A kind of preparation method of top radiation organic EL display panel is the embodiment of the invention provides, including：
Multiple film layers are sequentially formed on underlay substrate has the thin film transistor (TFT) of multiple bulge-structures to constitute surface；
Flatness layer is formed on the thin film transistor (TFT)；
Using the mask plate with the figure that matches with multiple bulge-structures, photoetching work is carried out to the flatness layer
Skill, to planarize the flatness layer.
In a kind of possible implementation, in above-mentioned preparation method provided in an embodiment of the present invention, in the film
Formed on transistor after flatness layer, also included：
Photoetching process is carried out to the flatness layer, multiple vias are formed with non-display area.
In a kind of possible implementation, in above-mentioned preparation method provided in an embodiment of the present invention, planarization is described
The photoetching process of flatness layer, is with a photoetching process with the photoetching process of the multiple vias of formation；Wherein,
The mask plate that the photoetching process is used includes transmission region and alternatively non-transparent region；
The light transmittance of transmission region corresponding from the bulge-structure and transmission region corresponding with the via is different.
In a kind of possible implementation, in above-mentioned preparation method provided in an embodiment of the present invention, the flatness layer
Material be positive photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, photoetching is carried out to the flatness layer
Technique, to planarize the flatness layer, specifically includes：
Using the mask plate with figure identical with multiple bulge-structures, photoetching process is carried out to the flatness layer,
To planarize the flatness layer.
In a kind of possible implementation, in above-mentioned preparation method provided in an embodiment of the present invention, the flatness layer
Material be negative photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, photoetching is carried out to the flatness layer
Technique, to planarize the flatness layer, specifically includes：
Using with the mask plate with multiple bulge-structure complementary graphs, photoetching process is carried out to the flatness layer,
To planarize the flatness layer.
In a kind of possible implementation, in above-mentioned preparation method provided in an embodiment of the present invention, in the use
Mask plate with the figure that matches with multiple bulge-structures, carries out photoetching process, to planarize to the flatness layer
Before stating flatness layer, also include：
The height of each bulge-structure is measured, the height according to each bulge-structure determines to carry out the flatness layer
The light exposure of photoetching, time for exposure and developing time.
In a kind of possible implementation, in above-mentioned preparation method provided in an embodiment of the present invention, the raised knot
The height of structure is between 10nm-1 μm；
The light exposure is 10mJ/cm2-500mJ/cm2, the time for exposure is 30s-150s, and the developing time is
10s-200s。
In a kind of possible implementation, in above-mentioned preparation method provided in an embodiment of the present invention, also include：
The flatness layer after to photoetching process is toasted.
The embodiment of the present invention additionally provides a kind of top radiation organic EL display panel, the top emitting organic electroluminescence
Light emitting display panel is made using above-mentioned preparation method.
The embodiment of the present invention additionally provides a kind of display device, including above-mentioned top radiation organic EL display panel.
The present invention has the beneficial effect that：
The embodiment of the invention provides a kind of top radiation organic EL display panel, its preparation method and display dress
Put, the preparation method includes：Multiple film layers are sequentially formed on underlay substrate has the thin of multiple bulge-structures to constitute surface
Film transistor；Flatness layer is formed on thin film transistor (TFT)；It is right using the mask plate with the figure that matches with multiple bulge-structures
Flatness layer carries out photoetching process, to planarize flatness layer.Preparation method provided in an embodiment of the present invention, by using have with it is thin
Multiple bulge-structures on film transistor surface match the mask plate of figure, photoetching process are carried out to flatness layer, to planarize
The flatness layer, it is possible to increase the flat performance of flatness layer, makes the thickness of the OLED films made on flat more uniform, because
And, uniformity of luminance in pixel can be improved, alleviate the granular sensation of OLED.
Brief description of the drawings
Fig. 1 is a kind of flow of the preparation method of top radiation organic EL display panel provided in an embodiment of the present invention
Figure；
Fig. 2 a are one of structural representation of preparation method provided in an embodiment of the present invention；
Fig. 2 b are the two of the structural representation of preparation method provided in an embodiment of the present invention；
Fig. 2 c are the three of the structural representation of preparation method provided in an embodiment of the present invention；
Fig. 2 d are the four of the structural representation of preparation method provided in an embodiment of the present invention；
Fig. 3 is the top view of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 4 a and Fig. 4 b are respectively the height distribution map to be formed after flatness layer in corresponding diagram 3 at dotted line AA ＇ and BB ＇；
Wherein, 101, underlay substrate；102nd, thin film transistor (TFT)；103rd, bulge-structure；104th, flatness layer；105th, mask plate；
106th, boss；200th, sub-pixel unit.
Specific embodiment
For present in prior art due to flatness layer planarization performance it is not good caused by non-uniform light in pixel
Problem, the embodiment of the invention provides a kind of top radiation organic EL display panel, its preparation method and display device.
Below in conjunction with the accompanying drawings, the specific embodiment to backlight module provided in an embodiment of the present invention and display device is carried out
Explain.The thickness and shape of each film layer do not reflect actual proportions in accompanying drawing, and purpose is schematically illustrate present invention.
A kind of preparation method of top radiation organic EL display panel is the embodiment of the invention provides, as shown in figure 1,
Including：
S101, on underlay substrate sequentially form multiple film layers there is the film crystal of multiple bulge-structures to constitute surface
Pipe；
S102, flatness layer is formed on thin film transistor (TFT)；
S103, using the mask plate with the figure that matches with multiple bulge-structures, photoetching process is carried out to flatness layer, with
Planarization flatness layer.
Preparation method provided in an embodiment of the present invention, by using have and film crystal pipe surface on the raised knot of multiple
Structure matches the mask plate of figure, photoetching process is carried out to flatness layer, to planarize the flatness layer, it is possible to increase flatness layer it is flat
Smooth performance, makes the thickness of the OLED films made on flat more uniform, therefore, it is possible to uniformity of luminance in pixel is improved,
Alleviate the granular sensation of OLED.
Reference picture 2a- Fig. 2 d, because the thin film transistor (TFT) 102 on underlay substrate 101 is typically made up of multiple film layers, for example
Can have specific figure, multiple film layers including grid, source electrode, drain electrode and film layer etc. gate insulator, each film layer
Are superimposed together the multiple bulge-structures 103 that just occur, as shown in Figure 2 a, the figure of bulge-structure 103 is brilliant by constituting film
What the figure of each film layer of body pipe 102 was determined, typically bulge-structure 103 height between 10nm-1 μm, therefore, it can
The figure of bulge-structure 103 is determined according to the figure for constituting thin film transistor (TFT) 102 each film layer, so that it is determined that subsequent step
The figure of mask plate in S103.Fig. 3 shows that the projection made after thin film transistor (TFT) 102 in each sub-pixel unit 200 is tied
The figure of structure 103, from figure 3, it can be seen that the figure of the bulge-structure 103 in each sub-pixel unit 200 is essentially identical.
It is general in above-mentioned steps S102 that flatness layer 104 is made using resinous material (such as photoresist), make flat
The material of layer 104 typically has certain viscosity and mobility, thus the correspondence of bulge-structure 103 on the flatness layer 104 for being formed
Position at also have the boss 106 of certain altitude, as shown in Figure 2 b, and the upper projecting portion of flatness layer 104 position 106 height
Less than the height of bulge-structure 103 on thin film transistor (TFT) 102, can be according to the height of bulge-structure 103 on thin film transistor (TFT) 102
And the thickness of flatness layer 104 obtains the height of the upper projecting portion of flatness layer 104 position 106 to calculate.By thin in above-mentioned steps S101
The structure of film transistor 102 can determine the mask plate 105 in step S103, because flatness layer 104 is generally resinous material,
It is therefore possible to use the boss 106 on photoetching process removal flatness layer 104.
Fig. 4 a and Fig. 4 b are respectively the height distribution map to be formed after flatness layer 104 in corresponding diagram 3 at dotted line AA ＇ and BB ＇, figure
In 4a, H represents height, and X represents position in the horizontal direction, and in Fig. 4 b, H represents height, and Y represents the position of in the vertical direction
Put.In the specific implementation, can according to Fig. 4 a and Fig. 4 b similar modes, obtain the height point of each position of flatness layer 104
Cloth, the height according to each position of flatness layer 104 for obtaining is distributed to determine the light transmittance of transmission region in mask plate, with positivity
As a example by photoresist, the light transmittance that can set the larger position of height value is higher, and the light transmittance of the less position of height value is relatively low,
Thus, making the more of the position removal that height value is larger on flatness layer 104, it is less that the relatively low position of height value removes, so that
Flatness layer 104 is set to tend to flat.It is thus follow-up when making functional layer on flatness layer 104, no matter using evaporation processing procedure or molten
Liquid processing procedure, the functional layer for obtaining all can be than more uniform, so as to avoid the OLED that causes in uneven thickness due to functional layer
Non-uniform light.
In practical application, when the boss 106 on flatness layer 104 it is highly essentially identical when, as shown in fig. 4 a, cover
In template the light transmittance of each transmission region could be arranged to it is identical, if on flatness layer 104 each boss 106 height difference compared with
When many, the average of each height can be taken to set unified transmitance, it is also possible to which the height according to diverse location is respectively provided with
Rate is crossed, is not limited herein.
Further, after above-mentioned steps S102, can also include：
Photoetching process is carried out to the flatness layer, multiple vias are formed with non-display area.
Multiple vias are formed by the non-display area on flatness layer, the anode and thin film transistor (TFT) of OLED can be made
Connection.It should be noted that the photoetching process for making via can be before the photoetching process of planarization flatness layer, it is also possible to
After the photoetching process of planarization flatness layer, it is also possible to which, while making, the order not to Twi-lithography is defined herein.
Further, the photoetching process of the flatness layer is planarized, the photoetching process with the multiple vias of formation is
With a photoetching process；Wherein,
The mask plate that the photoetching process is used includes transmission region and alternatively non-transparent region；
The light transmittance of transmission region corresponding from the bulge-structure and transmission region corresponding with the via is different.
By using special mask plate, Twi-lithography technique is merged into a photoetching process, a work can be saved
Skill, thus it is cost-effective, specifically, the thickness of the height less than flatness layer of general bulge-structure, and via is equal to flatness layer
Thickness, so, the transmitance that can set the transmission region of via correspondence position on mask plate is higher, for example, could be arranged to
100%th, 95% or 90% etc., and the transmitance of the transmission region of bulge-structure correspondence position is relatively low, such as 50%, 45% or
60% etc., the numerical value of specific transmitance needs to be determined according to the height of bulge-structure and the thickness of flatness layer.
In above-mentioned steps S103, the figure of mask plate 105 matches with the figure of multiple bulge-structures 103, thus to flat
Smooth layer 104 carries out photoetching process and can remove the boss 106 on flatness layer 104, to planarize flatness layer 104, in tool
When body is implemented, the figure of mask plate 105 is relevant with the performance of the material of flatness layer 104, including following two situations：
Situation one：The material of flatness layer 104 is positive photoresist；
Above-mentioned steps S103, can specifically include：
Using with the mask plate 105 with the identical figure of multiple bulge-structures 103, photoetching process is carried out to flatness layer 104,
To planarize flatness layer 104, as shown in Figure 2 c.
Due to positive photoresist exposure after dissolve in corresponding developer solution, therefore, using with the identical figure of bulge-structure 103
Mask plate 105 flatness layer 104 is exposed after, flatness layer 104 corresponds to bulge-structure 103 and is partially soluble in developer solution,
The boss 106 on flatness layer 104 is thus removed, so as to improve the flat performance of flatness layer 104.
Situation two：The material of flatness layer 104 is negative photoresist；
Above-mentioned steps S103, can specifically include：
Using with the mask plate 105 with the complementary graph of multiple bulge-structures 103, photoetching process is carried out to flatness layer 104,
To planarize flatness layer 104, as shown in Figure 2 d.
Due to not dissolving in developer solution after negative photoresist exposure, therefore, using the mask with the complementary graph of bulge-structure 103
After plate 105 is exposed to flatness layer 104, the part (part in addition to bulge-structure 103) that flatness layer 104 is exposed is insoluble
In developer solution, and flatness layer 104 is partially soluble in developer solution corresponding to bulge-structure 103, such that it is able to remove on flatness layer 104
Boss 106, improve the flat performance of flatness layer 104.
Further, for the boss on more accurate removal flatness layer, before above-mentioned steps S103, can be with
Including：
The height of each bulge-structure is measured, the height according to each bulge-structure determines to carry out flatness layer the exposure of photoetching
Amount, time for exposure and developing time.
In the specific implementation, the height of each bulge-structure is measured, can be included：
The height of each bulge-structure is measured by the way of step instrument or optic test.
By determining the height of each bulge-structure, such that it is able to the height according to each bulge-structure, it is determined that removal flatness layer
On the boss light exposure, time for exposure and the developing time that need, such that it is able to further improve the flat of flatness layer
Performance.
If in practical application, the height difference of each bulge-structure can use special mask plate to flat than larger
Smooth layer is exposed, and the light transmittance of the transmission region of mask plate, such as transparent area can be set according to the height of bulge-structure
Domain could be arranged to the numerical value such as the printing opacity of 50% printing opacity, 60% or 75%, so that the bulge-structure of different height has different exposures
Amount, thus make flatness layer more flat.
In the specific implementation, the height of bulge-structure is general between 10nm-1 μm；
Light exposure is 10mJ/cm2-500mJ/cm2, the time for exposure is 30s-150s (preferably 50s), and developing time is
10s-200s。
More specifically, light exposure is preferably 100mJ/cm2-200mJ/cm2。
Further, in above-mentioned preparation method provided in an embodiment of the present invention, can also include：
Flatness layer after photoetching process is toasted.
Flatness layer after to photoetching process is toasted, and can solidify flatness layer, can make the edge of flatness layer
Position further planarizes, so as to improve the flat performance of flatness layer.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of top radiation organic EL display panel,
The top radiation organic EL display panel is made using above-mentioned preparation method.Because the top radiation organic EL shows
The principle of panel solve problem is similar to above-mentioned preparation method, therefore the implementation of the top radiation organic EL display panel can
Repeated no more with referring to the implementation of above-mentioned preparation method, repeating part.
Based on same inventive concept, the embodiment of the present invention provides a kind of display device, including above-mentioned top emitting organic electroluminescence
Light emitting display panel, the display device can apply to mobile phone, panel computer, television set, display, notebook computer, number
Any product or part with display function such as photo frame, navigator.Due to the display device solve problem principle with it is above-mentioned
Top radiation organic EL display panel is similar, therefore the implementation of the display device may refer to above-mentioned top emitting organic electroluminescence
The implementation of light emitting display panel, repeats part and repeats no more.
Top radiation organic EL display panel provided in an embodiment of the present invention, its preparation method and display device, lead to
Cross using the mask plate with the figure that matches with the multiple bulge-structures in film crystal pipe surface, photoetching is carried out to flatness layer
Technique, to planarize the flatness layer, it is possible to increase the flat performance of flatness layer, makes the thickness of the OLED films made on flat
It is more uniform, therefore, it is possible to improve uniformity of luminance in pixel, alleviate the granular sensation of OLED.
Obviously, those skilled in the art can carry out various changes and modification without deviating from essence of the invention to the present invention
God and scope.So, if these modifications of the invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising these changes and modification.
Claims (10)
1. a kind of preparation method of top radiation organic EL display panel, it is characterised in that including：
Multiple film layers are sequentially formed on underlay substrate has the thin film transistor (TFT) of multiple bulge-structures to constitute surface；
Flatness layer is formed on the thin film transistor (TFT)；
Using the mask plate with the figure that matches with multiple bulge-structures, photoetching process is carried out to the flatness layer, with
Planarize the flatness layer.
2. preparation method as claimed in claim 1, it is characterised in that after forming flatness layer on the thin film transistor (TFT),
Also include：
Photoetching process is carried out to the flatness layer, multiple vias are formed with non-display area.
3. preparation method as claimed in claim 2, it is characterised in that the photoetching process of the planarization flatness layer, with formation
The photoetching process of multiple vias is with a photoetching process；Wherein,
The mask plate that the photoetching process is used includes transmission region and alternatively non-transparent region；
The light transmittance of transmission region corresponding from the bulge-structure and transmission region corresponding with the via is different.
4. preparation method as claimed in claim 1, it is characterised in that the material of the flatness layer is positive photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, photoetching work is carried out to the flatness layer
Skill, to planarize the flatness layer, specifically includes：
Using the mask plate with figure identical with multiple bulge-structures, photoetching process is carried out to the flatness layer, with flat
The smoothization flatness layer.
5. preparation method as claimed in claim 1, it is characterised in that the material of the flatness layer is negative photoresist；
It is described to use the mask plate with the figure that matches with multiple bulge-structures, photoetching work is carried out to the flatness layer
Skill, to planarize the flatness layer, specifically includes：
Using with the mask plate with multiple bulge-structure complementary graphs, photoetching process is carried out to the flatness layer, with flat
The smoothization flatness layer.
6. the preparation method as described in claim any one of 1-5, it is characterised in that described described convex with multiple using having
Play structure to match the mask plate of figure, photoetching process is carried out to the flatness layer, before planarizing the flatness layer, also to wrap
Include：
The height of each bulge-structure is measured, the height according to each bulge-structure determines to carry out photoetching to the flatness layer
Light exposure, time for exposure and developing time.
7. preparation method as claimed in claim 6, it is characterised in that the height of the bulge-structure is between 10nm-1 μm；
The light exposure is 10mJ/cm2-500mJ/cm2, the time for exposure is 30s-150s, and the developing time is 10s-
200s。
8. preparation method as claimed in claim 1, it is characterised in that also include：
The flatness layer after to photoetching process is toasted.
9. a kind of top radiation organic EL display panel, it is characterised in that the top radiation organic EL display surface
Plate is made using the preparation method as described in claim any one of 1-8.
10. a kind of display device, it is characterised in that including top radiation organic EL display surface as claimed in claim 9
Plate.
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|---|---|---|---|---|
| CN110021654A (en) * | 2019-04-24 | 2019-07-16 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN110034152A (en) * | 2018-01-12 | 2019-07-19 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, display device |
| CN111029387A (en) * | 2019-12-20 | 2020-04-17 | 京东方科技集团股份有限公司 | Manufacturing method of OLED substrate, display device and mask plate |
| CN112271266A (en) * | 2020-10-26 | 2021-01-26 | 合肥京东方卓印科技有限公司 | Film layer structure, preparation method thereof, display panel and display device |
| CN112331696A (en) * | 2019-12-27 | 2021-02-05 | 广东聚华印刷显示技术有限公司 | Light-emitting device, substrate thereof and manufacturing method |
| CN113013212A (en) * | 2021-02-25 | 2021-06-22 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466229A (en) * | 2002-07-01 | 2004-01-07 | �Ѵ���ɷ�����˾ | Method for preventing breakage of cathode of active type organic LED device |
| CN1527649A (en) * | 2003-09-23 | 2004-09-08 | 孙润光 | Transparent electroluminescence device driven with active matrix |
| CN1652350A (en) * | 2003-11-25 | 2005-08-10 | 三星Sdi株式会社 | Thin film transistor and method of manufacturing the same |
| CN1790668A (en) * | 2002-07-01 | 2006-06-21 | 友达光电股份有限公司 | Method for preventing active organic LED device cathode from breaking |
| CN101038932A (en) * | 2006-03-14 | 2007-09-19 | 精工爱普生株式会社 | Electroluminescent device, method for manufacturing electroluminescent device, and electronic apparatus |
| CN102376544A (en) * | 2010-08-19 | 2012-03-14 | 上海华虹Nec电子有限公司 | Nondestructive surface flattening method during semiconductor integrated circuit manufacturing |
| US20130126877A1 (en) * | 2004-10-01 | 2013-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| CN103235443A (en) * | 2013-04-24 | 2013-08-07 | 京东方科技集团股份有限公司 | Display substrate, display device and manufacturing method of display substrate |
| CN103258726A (en) * | 2013-03-25 | 2013-08-21 | 北京京东方光电科技有限公司 | Thin film surface planarization method, array substrate, manufacturing method of array substrate and display device |
| CN103258793A (en) * | 2013-03-29 | 2013-08-21 | 京东方科技集团股份有限公司 | Manufacturing method of COA array substrate, array substrate and display device |
| CN104538421A (en) * | 2014-12-16 | 2015-04-22 | 深圳市华星光电技术有限公司 | OLED display substrate and manufacturing method of OLED display substrate |
| CN104538357A (en) * | 2015-01-13 | 2015-04-22 | 合肥京东方光电科技有限公司 | Method for manufacturing array substrate and array substrate |
| CN104733491A (en) * | 2013-12-20 | 2015-06-24 | 昆山国显光电有限公司 | Organic light-emitting displaying device and preparing method thereof |
| CN105449127A (en) * | 2016-01-04 | 2016-03-30 | 京东方科技集团股份有限公司 | Light emitting diode display base plate and preparation method thereof, display device |
-
2017
- 2017-04-14 CN CN201710243869.2A patent/CN106816558B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1466229A (en) * | 2002-07-01 | 2004-01-07 | �Ѵ���ɷ�����˾ | Method for preventing breakage of cathode of active type organic LED device |
| CN1790668A (en) * | 2002-07-01 | 2006-06-21 | 友达光电股份有限公司 | Method for preventing active organic LED device cathode from breaking |
| CN1527649A (en) * | 2003-09-23 | 2004-09-08 | 孙润光 | Transparent electroluminescence device driven with active matrix |
| CN1652350A (en) * | 2003-11-25 | 2005-08-10 | 三星Sdi株式会社 | Thin film transistor and method of manufacturing the same |
| US20130126877A1 (en) * | 2004-10-01 | 2013-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| CN101038932A (en) * | 2006-03-14 | 2007-09-19 | 精工爱普生株式会社 | Electroluminescent device, method for manufacturing electroluminescent device, and electronic apparatus |
| CN102376544A (en) * | 2010-08-19 | 2012-03-14 | 上海华虹Nec电子有限公司 | Nondestructive surface flattening method during semiconductor integrated circuit manufacturing |
| CN103258726A (en) * | 2013-03-25 | 2013-08-21 | 北京京东方光电科技有限公司 | Thin film surface planarization method, array substrate, manufacturing method of array substrate and display device |
| CN103258793A (en) * | 2013-03-29 | 2013-08-21 | 京东方科技集团股份有限公司 | Manufacturing method of COA array substrate, array substrate and display device |
| CN103235443A (en) * | 2013-04-24 | 2013-08-07 | 京东方科技集团股份有限公司 | Display substrate, display device and manufacturing method of display substrate |
| CN104733491A (en) * | 2013-12-20 | 2015-06-24 | 昆山国显光电有限公司 | Organic light-emitting displaying device and preparing method thereof |
| CN104538421A (en) * | 2014-12-16 | 2015-04-22 | 深圳市华星光电技术有限公司 | OLED display substrate and manufacturing method of OLED display substrate |
| CN104538357A (en) * | 2015-01-13 | 2015-04-22 | 合肥京东方光电科技有限公司 | Method for manufacturing array substrate and array substrate |
| CN105449127A (en) * | 2016-01-04 | 2016-03-30 | 京东方科技集团股份有限公司 | Light emitting diode display base plate and preparation method thereof, display device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034152A (en) * | 2018-01-12 | 2019-07-19 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, display device |
| CN110034152B (en) * | 2018-01-12 | 2023-08-04 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN110021654A (en) * | 2019-04-24 | 2019-07-16 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN110021654B (en) * | 2019-04-24 | 2021-11-09 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| US11522030B2 (en) | 2019-04-24 | 2022-12-06 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate and display device with compensation pattern and planarization layers, and method of forming the same |
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| CN112271266A (en) * | 2020-10-26 | 2021-01-26 | 合肥京东方卓印科技有限公司 | Film layer structure, preparation method thereof, display panel and display device |
| CN112271266B (en) * | 2020-10-26 | 2023-05-16 | 合肥京东方卓印科技有限公司 | Film structure, preparation method thereof, display panel and display device |
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