CN106788257A - Ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode - Google Patents
Ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N80/10—Gunn-effect devices
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Abstract
A kind of ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode, its feature exists：Including the DC offset voltage input block unit, input low pass filter, the slotting finger coupled capacitor of output, the plane Gunn diode resonator with thermoelectron injection effect that are sequentially connected.DC offset voltage is inserted by the central microstrip line and output that are input into low pass filter and refers to that the upper end metal arm of coupled capacitor is connected feed-in with top layer anode one end of the Gunn diode with thermoelectron injection effect from the middle conductor feed-in of DC offset voltage input block.The present invention uses monolithic integrated microwave circuit and coplanar guide technology, and using auto bias circuit structure, circuit structure is simple, it is easy to accomplish single-chip integration, it is not necessary to complicated cavity waveguide footprint component.Present invention introduces the plane Gunn diode with thermoelectron injection effect, the effectively conversion efficiency of enhancing voltage controlled oscillator direct current radio frequency.
Description
Technical field
The invention belongs to microwave integrated circuit technical field in microelectronics, and in particular to one kind is based on plane Gunn diode
Ka wave band single-chip integration voltage controlled oscillators.
Background technology
Gunn diode is also referred to as transferred-electron device, and when applying bias voltage is more than its threshold voltage, it has negative micro-
Sub-resistance characteristic, the negative differential resistance can offset the positive resistance of necessary being, form zero resistance circuit, obtain infinite vibration,
Produce output RF/Microwave signal.Oscillator operation principle with Gunn diode as non-linear element is simple, mentality of designing is simple
It is clean, as the local vibration source of frequency mixer generally in all kinds of receivers, as in various microwave modules in radar and communication system
Middle low power signal source.Due to the limitation of material and device architecture, the oscillator output frequencies upper limit based on Gunn diode
For 100GHz (GaAs) arrives 300GHz (InP).
Under normal circumstances, traditional Gunn diode, uses Uniform Doped on N-type layer, and mainly uses vertical junction
Gunn diode electric current under structure, it is impossible to integrated with peripheral circuit element, and positive negative bias voltage has symmetry.With traditional honest and just
Family name's diode is the oscillating circuit of core, and outputting oscillation signal is realized using waveguide mechanical tuning based on cavity waveguide footprint technology
The regulation of frequency and power, not only circuit cavity package complex process, cost of manufacture are high, volume is big, and are unfavorable for and system
Other circuit realiration single-chip integrations, cause to need the bodies such as substantial amounts of component carrier, external biasing circuit and metal waveguide in system
The larger component of product.
The content of the invention
It is an object of the invention to provide a kind of ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode,
Layer line grade doping intrinsic-barrier layer is inserted under the top layer anode heavily doped layer of traditional Gunn diode, thermoelectricity is introduced
Sub- injection effect, reduces the negative current of Gunn diode；Change the negative of its plane Gunn diode using applying bias voltage
Differential resistance and capacitance characteristic, realize the tuning of radio frequency output signal frequency, and VCO is strengthened using thermoelectron injection effect
The conversion efficiency of device direct current-radio frequency, increases oscillator excellent performance.
The key technical problems for realizing the object of the invention are:It is straight more than device under plane Gunn diode threshold voltage
Stream electric current is larger, and significantly, the thermal conductivity dissipation for how strengthening Gunn diode is particularly important for the self-heating effect of Gunn diode；It is determined that
The equivalent negative resistance of Gunn diode and equivalent parasitic capacitances C under negative differential resistance state, design are adapted with parasitic capacitance C
Reactive resonator, is the core of whole Ka wave bands Voltage-Controlled oscillation circuit；How the radiofrequency signal of voltage controlled oscillator is effectively improved
Power output, the tuning for realizing radio frequency output signal frequency and powerUsing monolithic integrated microwave circuit technique, how to realize with
The compatible input low pass filter of thermoelectron injection effect plane Gunn diode preparation technology, output coupling capacitor and coupler
Interconnection between structure, and each element
Technical scheme is as follows:
Ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode, including the direct current biasing electricity being sequentially connected
Pressure input block unit, input low pass filter, output are inserted and refer to coupled capacitor, the plane gunn two with thermoelectron injection effect
Pole pipe resonator.
The DC offset voltage input block uses the middle conductor feed-in of co-planar waveguide, and its middle conductor metal connects electricity
Source voltage, co-planar waveguide both sides conductor metal connects power supply ground.Middle conductor is connected by microstrip line with input low pass filter.
The input LPF is in series by the filter unit of two section coplanar waveguide structures.Being input into low pass filter is
Plane Gunn diode with thermoelectron injection effect provides DC channel, while suppressing Gunn diode in DC channel
Vibrate the output radio signal transmission for producing, the power output of enhancing output radiofrequency signal.
The output is inserted and refers to that coupled capacitor lower end metal arm is connected with radio frequency output port, and wherein upper end metal arm has 4 to insert
Refer to microstrip line, lower end metal arm has 5 to insert finger microstrip line.
The plane Gunn diode with thermoelectron injection effect inserts one layer 50 under top layer anode heavily doped layer
Nanometer AlxGa1-xThe linear gradient doping intrinsic-barrier layer of As, the top layer anode of plane Gunn diode is dual-port, wherein one
End is connected with applying bias voltage, and the other end is connected with resonator, and bottom negative electrode and the co-planar waveguide of plane Gunn diode are passed
Defeated line both sides metal ground is connected, and the direct current of Gunn diode is formed between coplanar waveguide transmission line center microstrip line and two ends ground
Voltage bias path.
The resonator by 1/2nd wavelength coplanar waveguide transmission lines and the distribution symmetrical above and below of central water horizontal line two simultaneously
The wire-wound inductor cascade of connection rectangle broken line is constituted.
DC offset voltage from the middle conductor feed-in of DC offset voltage input block, by being input into low pass filter
The top of the upper end metal arm with the Gunn diode with thermoelectron injection effect that refer to coupled capacitor is inserted in central microstrip line and output
The connection feed-in of layer anode one end.
Further, the middle conductor of the DC offset voltage input block is the coplanar wave guide transmission of 50 Europe characteristic impedances
Line, micro-strip width is 48 μm, and length is 40 μm, and middle conductor is 35 μm with the gap width on two side conductors ground.
Further, 48 μm of the micro belt line width, 65 μm of vertical length.
Further, the input low pass filter upper cut-off frequency is 28GHz, and it is 0.5dB, band to lead to in-band insertion loss
It is suppressed to -30dB outward；The central microstrip line of the filter unit is made up of five section Stepped Impedance microstrip lines, and edema with the heart involved in the structure
There is symmetrical above and below and symmetrical characteristic, 10 μm of the micro-strip line width of top and bottom is long 1060 μm, most at horizontal line and vertical line
40 μm of middle micro-strip line width, it is long 1180 μm, it is long 60 μm near 15 μm of the two ends micro-strips line width of most middle microstrip line；Filter unit
Top and bottom ground is made up of " work " shaped microstrip line, 10 μm of the micro-strip line width of bottom is long 1060 μm, the micro-strip line width of centre
15 μm, long 60 μm, the microstrip line of the top is unlimited broadly plane, and length is 1180 μm, Stepped Impedance microstrip line and " work " shape
The vertical interval of microstrip line is 15 μm.
Further, the output is inserted and refers to that 5 slotting finger micro belt line widths of coupled capacitor are 20 μm, and length is 56 μm；
The gap inserted between referring to is 15 μm, and it is 0.2pf to be exported under 38GHz and insert finger coupling capacitance.
Further, the top layer annode area of the plane Gunn diode with thermoelectron injection effect is 30*40 μ
m2, the level interval of anode and negative electrode is 5 μm.When Gunn diode anode connects positive bias voltage, Gunn diode presents negative micro-
The threshold voltage of sub-resistance is 3.8V, and maximum forward current value is 225 milliamperes.It is honest and just when Gunn diode anode connects negative bias voltage
The threshold voltage that family name's diode is presented negative differential resistance is -4.5V, and maximum reverse current is 135 milliamperes, and Gunn diode is just
Reverse current has reverse asymmetry.
Further, 1/2nd wavelength coplanar waveguide transmission line includes middle waveguide and two side conductors ground.Two/
One wavelength coplanar waveguide transmission line length is 229 μm, and middle conductor micro-strip width is 40 μm, middle conductor and two side conductors ground
Gap width is 30 μm；The micro belt line width of the rectangle broken line wire-wound inductor is 12 μm, and the spacing of coiling micro-strip coil is 16 μ
M, 424 μm of the horizontal rectangular micro-strip line length of innermost circle, the rectangle broken line wire-wound inductor number of turns be 2.5 circle, under 38GHz rectangle broken line around
Line inductance value is 0.7nH.
Further, the DC offset voltage input block (0), input low pass filter, output is inserted and refers to coupled capacitor, tool
Plane Gunn diode, the resonator for having thermoelectron injection effect are produced on the dielectric of gallium arsenide substrate and 300nm；
The gallium arsenide substrate is bonded on copper hot plate, strengthens the heat dissipation of circuit.
Beneficial effects of the present invention:
1. coplanar waveguide transmission line structural configuration is used, it is to avoid the complicated golden preparation technology of via and the back of the body；Using copper heat
Plate loss dissipates the high current fuel factor of plane Gunn diode, the reliability of enhancing device work.
2. one layer of linear gradient intrinsic gesture of doping of 50 nanometers of AlxGa1-xAs is inserted under top layer anode heavily doped layer
Barrier layer, makes plane Gunn diode work at a negative bias voltage, reduces the negative sense conducting electric current of plane Gunn diode, improves
The negative resistance of device, strengthens the conversion efficiency of direct current-radio frequency
3. VCO signal is effectively strengthened to the reflection suppression of output radiofrequency signal using input channel low pass filter
Power output.
4. change the equivalent negative resistance and electric capacity C of plane Gunn diode using bias voltage, realize output strength
The tuning of signal frequency and power output, circuit structure is simple, and it is convenient to realize.
5. with the oscillator of the plane Gunn diode of excellent properties thermoelectron injection effect, using the integrated electricity of monolithic microwave
Road and coplanar guide technology, using auto bias circuit structure, simplify circuit structure, it is easy to accomplish single-chip integration, it is not necessary to complicated
Cavity waveguide footprint component.
Brief description of the drawings
Fig. 1 is domain of the invention；
Fig. 2 is circuit theory diagrams of the invention；
Fig. 3 is the structure chart of DC offset voltage input block in present example；
Fig. 4 is the structure chart of input low pass filter in present example；
Fig. 5 is the cellular construction figure of input low pass filter in present example；
Fig. 6 is the slotting structure chart for referring to coupled capacitor of output in present example；
Fig. 7 is the schematic cross-section of the plane Gunn diode with thermoelectron injection effect in present example；
Fig. 8 is the top view of the plane Gunn diode with thermoelectron injection effect in present example；
Fig. 9 is that DC voltage-electric current of the plane Gunn diode with thermoelectron injection effect in present example is special
Property figure；
Figure 10 is the structure chart of resonator in present example；
Figure 11 is the output radio frequency signal frequency that present example is provided and power output with bias voltage variation characteristic figure；
Specific embodiment
The technology of the present invention is described in detail with reference to the accompanying drawings and examples.
As shown in figure 1, the ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode, including be sequentially connected straight
Flow bias voltage input block 0, input low pass filter 1, the slotting finger coupled capacitor 2 of output, putting down with thermoelectron injection effect
The resonator 4 of face Gunn diode 3.They are produced on the dielectric of gallium arsenide substrate and 300nm, and gallium arsenide substrate
It is bonded on copper hot plate, strengthens the heat dissipation of circuit.If Fig. 2 is corresponding circuits schematic diagram proposed by the present invention.
As shown in figure 3, middle conductor feed-in of the DC offset voltage input block 0 using co-planar waveguide, its middle conductor
Metal connects supply voltage, and co-planar waveguide both sides conductor metal connects power supply ground.Middle conductor is by microstrip line 0-1 and input low pass filtered
Ripple device 1 is connected.Wherein, middle conductor is the coplanar waveguide transmission line of 50 Europe characteristic impedances, and micro-strip width is 48 μm, and length is 40
μm, middle conductor is 35 μm with the gap width on two side conductors ground.48 μm of microstrip line 0-1 width, 65 μm of vertical length.
As shown in figure 4, input LPF 1 is in series by the filter unit 1-1 of two section coplanar waveguide structures.Input is low
Bandpass filter 1 is that the plane Gunn diode 3 with thermoelectron injection effect provides DC channel, while pressing down in DC channel
The output radio signal transmission that Gunn diode vibration processed is produced, the power output of enhancing output radiofrequency signal.
As shown in figure 5, input low pass filter 1 upper cut-off frequency is 28GHz, it is 0.5dB, band to lead to in-band insertion loss
It is suppressed to -30dB outward.The central microstrip line of filter unit 1-1 is made up of five section Stepped Impedance microstrip line 1-1-1, and in the structure
There are symmetrical above and below and symmetrical characteristic, 10 μm of the micro-strip line width of top and bottom, 1060 μ long at edema with the heart involved horizontal line and vertical line
M, most middle 40 μm of micro-strip line width is long 1180 μm, long 60 μm near 15 μm of the two ends micro-strips line width of most middle microstrip line；Filtering
The top and bottom ground of unit 1-1 is made up of " work " shaped microstrip line 1-1-2, and 10 μm of the micro-strip line width of bottom is long 1060 μm, in
Between 15 μm of micro-strip line width, long 60 μm, the microstrip line of the top is unlimited broadly plane, and length is 1180 μm, and Stepped Impedance is micro-
Vertical interval with line 1-1-1 and " work " shaped microstrip line 1-1-2 is 15 μm.
In the present invention, output is inserted and refers to that the lower end metal arm of coupled capacitor 2 is connected with radio frequency output port, wherein upper end metal arm
There are 4 to insert and refer to microstrip line, lower end metal arm has 5 to insert finger microstrip line.As shown in fig. 6, output is inserted refers to that 5 slotting fingers of coupled capacitor 2 are micro-
Band line width is 20 μm, and length is 56 μm；The gap inserted between referring to is 15 μm, is exported under 38GHz and inserts finger coupling capacitance
It is 0.2pf.
As shown in Figure 7 and Figure 8, the plane Gunn diode 3 with thermoelectron injection effect is in top layer anode heavily doped layer
One layer of 50 nanometers of Al of lower insertionxGa1-xThe linear gradient doping intrinsic-barrier layer of As, the top layer anode of plane Gunn diode is
Dual-port, wherein one end are connected with applying bias voltage, and the other end is connected with resonator 4, and the bottom of plane Gunn diode is cloudy
Pole is connected with coplanar waveguide transmission line both sides metal ground, forms honest and just between coplanar waveguide transmission line center microstrip line and two ends ground
The DC voltage bias path of family name's diode.
The top layer anode of plane Gunn diode is dual-port, and wherein one end is connected with applying bias voltage, the other end and
Resonator 4 is connected, and the bottom negative electrode of plane Gunn diode is connected with coplanar waveguide transmission line both sides metal ground.It is described with heat
The top layer annode area of the plane Gunn diode 3 of electron injection effect is 30*40 μm2, the level interval of anode and negative electrode is 5
μm.When Gunn diode anode connects positive bias voltage, the threshold voltage that Gunn diode is presented negative differential resistance is 3.8V, maximum
Forward current is 225 milliamperes.When Gunn diode anode connects negative bias voltage, Gunn diode is presented the threshold value of negative differential resistance
Voltage is -4.5V, and maximum reverse current is 135 milliamperes, and forward and reverse electric current of Gunn diode has reverse asymmetry.On top
One layer of 50 nanometers of Al are inserted under layer anode heavily doped layerxGa1-xThe linear gradient doping intrinsic-barrier layer of As, introduces thermoelectron note
Enter effect, reduce the DC current under negatively biasing voltage.Top layer positive contact metal passes through one layer of Si4N3Dielectric is climbed
Slope plane technique is connected extraction with lead PAD, it is to avoid complicated air wall lead technique, although Si4N3The gunn of planar technology
There is parasitic capacitance effect in diode, but its parasitic capacitance effect does not influence it in the low frequency microwave frequency range application of 38GHz.Gunn
The specific preparation method of diode can refer to patent " a kind of Gunn diode and preparation method thereof ", notification number
CN102544113B。
Fig. 9 gives the DC voltage of the plane Gunn diode with thermoelectron injection effect-current characteristics figure, gunn
When diode anode connects positive bias voltage, the threshold voltage that Gunn diode is presented negative differential resistance is 3.8V, maximum forward electricity
Flow is 225 milliamperes；When Gunn diode anode connects negative bias voltage, Gunn diode is presented the threshold voltage of negative differential resistance
It is -4.5V, maximum reverse current is 135 milliamperes, much smaller than the electric current under forward bias voltage, with the injection of obvious thermoelectron
Effect, can effectively strengthen the conversion efficiency of oscillator direct current-radio frequency.
In the present invention, resonator 4 is by 1/2nd wavelength coplanar waveguide transmission line 4-1 and symmetrical above and below point of central water horizontal line
The rectangle broken line wire-wound inductor 4-2 cascades in parallel of the two of cloth are constituted.
As shown in Figure 10,1/2nd wavelength coplanar waveguide transmission line 4-1 includes its middle waveguide and two side conductors
Ground./ 2nd wavelength coplanar waveguide transmission line 4-1 length be 229 μm, middle conductor micro-strip width be 40 μm, middle conductor with
The gap width on two side conductors ground is 30 μm；The micro belt line width of the rectangle broken line wire-wound inductor 4-2 is 12 μm, coiling micro-strip
The spacing of coil is 16 μm, 424 μm of the horizontal rectangular micro-strip line length of innermost circle, and the rectangle broken line wire-wound inductor number of turns is 2.5 circles,
Rectangle broken line wire-wound inductor value is 0.7nH under 38GHz.
Using structure of the invention, DC offset voltage leads to from the middle conductor feed-in of DC offset voltage input block 0
The central microstrip line and output for crossing input low pass filter 1 insert the upper end metal arm of finger coupled capacitor 2 and with thermoelectron injection
Top layer anode one end connection feed-in of the Gunn diode 3 of effect.
As shown in figure 11, the output radio frequency signal frequency and power output that present example is provided change special with bias voltage
Property figure, wherein the plane Gunn diode with thermoelectron injection effect is operated under negatively biasing voltage, when applied bias electricity
When pressure is equal to negative sense threshold voltage 4.5V, the rf oscillation signal that oscillator has stabilization is exported, and its output frequency is 37.65GHz,
Power output is -4dBm.The present invention implements the oscillator for providing, and under negatively biasing voltage 8V, oscillator is exported at 38GHz
Output phase noise under peak power output -2.78dBm, 10KHz carrier wave is -93.5dBc/Hz, maximum direct current-radio frequency conversion
Efficiency is 0.5%, and electric property is excellent.Can be carried in the range of negatively biasing voltage -10V in threshold voltage -4.5V- maximums, base
In plane Gunn diode ka wave band single-chip integration voltage controlled oscillators output radio frequency signal frequency in 37.65-38.25GHz
Frequency range changes, and corresponding power output is adjusted in -9dBm to -2.78dBm ranges, the voltage-frequency for exporting radio frequency signal frequency
Humorous scope is 600MHz.Because whole monolithic integrated microwave circuit is bonded on copper hot plate, the plane with thermoelectron injection effect
The device fuel factor that Gunn diode high current is produced effectively is dissipated by copper coin, and thermal conduction characteristic is good, has no that chip burns phenomenon,
Device can effectively, reliably working.
Preferred embodiments of the invention are the foregoing is only, is not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various changes and change.It is all within the spirit and principles in the present invention, done any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (8)
1. the ka wave band single-chip integration voltage controlled oscillators of plane Gunn diode are based on, and its feature exists：It is straight including what is be sequentially connected
Stream bias voltage input block (0), input low pass filter (1), output are inserted and refer to coupled capacitor (2), injected with thermoelectron and imitated
Plane Gunn diode (3) resonator (4) answered；
The DC offset voltage input block (0) uses the middle conductor feed-in of co-planar waveguide, and its middle conductor metal connects electricity
Source voltage, co-planar waveguide both sides conductor metal connects power supply ground；Middle conductor is by microstrip line (0-1) and input low pass filter
(1) it is connected；
Input low pass filter (1) is in series by the filter unit (1-1) of two section coplanar waveguide structures；Input low pass filtered
Ripple device (1) is that the plane Gunn diode (3) with thermoelectron injection effect provides DC channel, while pressing down in DC channel
The output radio signal transmission that Gunn diode vibration processed is produced, the power output of enhancing output radiofrequency signal；
The output is inserted and refers to that coupled capacitor (2) lower end metal arm is connected with radio frequency output port, and wherein upper end metal arm has 4 to insert and refers to
Microstrip line, lower end metal arm has 5 to insert finger microstrip line；
The plane Gunn diode (3) with thermoelectron injection effect is inserted one layer 50 under top layer anode heavily doped layer to be received
Rice AlxGa1-xThe linear gradient doping intrinsic-barrier layer of As, the top layer anode of plane Gunn diode is dual-port, wherein one end
It is connected with applying bias voltage, the other end is connected with resonator (4), bottom negative electrode and the co-planar waveguide of plane Gunn diode are passed
Defeated line both sides metal ground is connected, and the direct current of Gunn diode is formed between coplanar waveguide transmission line center microstrip line and two ends ground
Voltage bias path；
The resonator (4) is by 1/2nd wavelength coplanar waveguide transmission lines (4-1) and the distribution symmetrical above and below of central water horizontal line
Two rectangle broken line wire-wound inductor (4-2) cascades in parallel are constituted；
DC offset voltage from the middle conductor feed-in of DC offset voltage input block (0), by being input into low pass filter (1)
Central microstrip line and output insert refer to coupled capacitor (2) upper end metal arm with have thermoelectron injection effect Gunn diode
(3) top layer anode one end connection feed-in.
2. the ka wave band single-chip integration voltage controlled oscillators of plane Gunn diode are based on as claimed in claim 1, and its feature exists
In:The middle conductor of the DC offset voltage input block (0) is the coplanar waveguide transmission line of 50 Europe characteristic impedances, and micro-strip is wide
It is 48 μm to spend, and length is 40 μm, and middle conductor is 35 μm with the gap width on two side conductors ground.
3. the ka wave band single-chip integration voltage controlled oscillators of plane Gunn diode are based on as claimed in claim 1, and its feature exists
In:48 μm of microstrip line (0-1) width, 65 μm of vertical length.
4. the ka wave band single-chip integration voltage controlled oscillators of plane Gunn diode are based on as claimed in claim 1, and its feature exists
In:It is described input low pass filter (1) upper cut-off frequency be 28GHz, lead to in-band insertion loss be 0.5dB, Out-of-band rejection for-
30dB；The central microstrip line of the filter unit (1-1) is made up of five sections Stepped Impedance microstrip line (1-1-1), and in the structure
There are symmetrical above and below and symmetrical characteristic, 10 μm of the micro-strip line width of top and bottom, 1060 μ long at edema with the heart involved horizontal line and vertical line
M, most middle 40 μm of micro-strip line width is long 1180 μm, long 60 μm near 15 μm of the two ends micro-strips line width of most middle microstrip line；Filtering
The top and bottom ground of unit (1-1) is made up of " work " shaped microstrip line (1-1-2), 10 μm of the micro-strip line width of bottom, 1060 μ long
M, 15 μm middle of micro-strip line width is long 60 μm, and the microstrip line of the top is unlimited broadly plane, and length is 1180 μm, step resistance
Anti- microstrip line (1-1-1) is 15 μm with the vertical interval of " work " shaped microstrip line (1-1-2).
5. the ka wave band single-chip integration voltage controlled oscillators of plane Gunn diode are based on as claimed in claim 1, and its feature exists
In:The output is inserted and refers to that 5 slotting finger micro belt line widths of coupled capacitor (2) are 20 μm, and length is 56 μm；Insert the seam between referring to
Gap is 15 μm, and it is 0.2pf to be exported under 38GHz and insert finger coupling capacitance.
6. the ka wave band single-chip integration voltage controlled oscillators of plane Gunn diode are based on as claimed in claim 1, and its feature exists
In:The top layer annode area of the plane Gunn diode (3) with thermoelectron injection effect is 30*40 μm2, anode and the moon
The level interval of pole is 5 μm；When Gunn diode anode connects positive bias voltage, Gunn diode is presented the threshold value of negative differential resistance
Voltage is 3.8V, and maximum forward current value is 225 milliamperes；When Gunn diode anode connects negative bias voltage, Gunn diode is presented
The threshold voltage of negative differential resistance is -4.5V, and maximum reverse current is 135 milliamperes, and forward and reverse electric current of Gunn diode has
Reverse asymmetry.
7. the ka wave band single-chip integration voltage controlled oscillators of plane Gunn diode are based on as claimed in claim 1, and its feature exists
In:/ 2nd wavelength coplanar waveguide transmission line (4-1) includes middle waveguide and two side conductors ground；/ 2nd wavelength are total to
Coplanar waveguide transmission line (4-1) length is 229 μm, and middle conductor micro-strip width is 40 μm, the seam on middle conductor and two side conductors ground
Gap width is 30 μm；The micro belt line width of the rectangle broken line wire-wound inductor (4-2) is 12 μm, and the spacing of coiling micro-strip coil is
16 μm, 424 μm of the horizontal rectangular micro-strip line length of innermost circle, the rectangle broken line wire-wound inductor number of turns is 2.5 circles, rectangle folding under 38GHz
Line wire-wound inductor value is 0.7nH.
8. ka wave band single-chip integration VCOs based on plane Gunn diode as described in any one of claim 1-7
Device, it is characterised in that:The DC offset voltage input block (0), input low pass filter (1), output are inserted and refer to coupled capacitor
(2), the plane Gunn diode (3) with thermoelectron injection effect, resonator (4) are produced on gallium arsenide substrate and 300nm
Dielectric on；The gallium arsenide substrate is bonded on copper hot plate, strengthens the heat dissipation of circuit.
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| CN110445507A (en) * | 2019-08-13 | 2019-11-12 | 李冲 | A kind of millimeter wave Terahertz transceiver module and its working method |
| CN114420520A (en) * | 2022-01-18 | 2022-04-29 | 电子科技大学 | Microstrip line-based strip electron beam focusing method, device and application |
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