CN106784203B - 一种像素结构及制造方法 - Google Patents
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Abstract
本发明公开了一种像素结构及制造方法，包括：准备一基板；在基板上制造具有容置腔及隔离区的黑色光阻层；在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；将微发光二极管对位转移至黑色光阻层中。通过上述方式，本发明能够提高微发光二极管的光利用率。
Description
技术领域
本发明涉及显示技术领域，特别是涉及一种像素结构及制造方法。
背景技术
随着显示技术的高速发展，关于微发光二极管(Micro LED)的显示应用也越来越受到业界关注。
Micro LED作为电流驱动的自发光单元，每个独立的发光单元都向空间中的各个方向均匀发光，因此在这一过程中损失多数的光能量。
发明内容
本发明提供一种像素结构及制造方法，能够提高微发光二极管光利用率。
为解决上述技术问题，本发明采用的一种技术方案是：提供一种提高微发光二极管光利用率的像素制造方法，所述方法包括：准备一基板；在所述基板上制造具有容置腔及隔离区的黑色光阻层；在所述黑色光阻层除所述隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；在所述聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层；将所述微发光二极管对位转移至所述黑色光阻层中。
为解决上述技术问题，本发明采用的又一种技术方案是：提供一种像素结构，所述像素结构包括：基板；黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上；微发光二极管，所述微发光二极管设置于所述隔离区上。
本发明的有益效果是：区别于现有技术的情况，本发明通过形成具有反射层的像素结构，能够提高微发光二极管的光利用率。
附图说明
图1为本发明像素结构制作方法一实施例的流程示意图；
图2为本发明像素结构一实施方式的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，图1为本发明像素结构制作方法一实施例，该方法包括如下步骤：
S110，准备一基板。
其中，该基板可以为透明材质，具体可以是玻璃或者透明塑料等。
S120，在基板上制造具有容置腔及隔离区的黑色光阻层。
在步骤S120中，该具有容置腔及隔离区的黑色光阻层的形成可以采用光刻法一步成型。其中，黑色光阻层是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板表面的氧化层中，以便在后续工序中，保护下面的材料(刻蚀或离子注入等)。
光刻法指在通过一系列生产步骤，将基板表面的光阻层的特定部分除去的工艺，在此之后基板表面会留下带有微图形结构的光阻层。通过光刻工艺过程，最终在基板表面上保留的是特征图形部分。且光刻法的三基本要素为控制光照(主要为紫外光)、掩模板以及光刻胶(光阻)。
在本实施例中，该具有容置腔及隔离区的黑色光阻层可以通过光刻法一步成型。在其它实施例中，该黑色光阻层也可以通过光刻法两步成型，即先形成具有容置腔结构的黑色光阻层，再在容置腔中进一步形成隔离区结构。其中，该隔离区可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质溶液和金属纳米粒子溶液都不会涂布在该隔离区部分，目的是隔离微发光二极管两端的引脚，以使得微发光二极管不会被短路。在本实施例中，该隔离区设置成凸起结构，以方便微发光二极管的放置。
S130，在黑色光阻层除隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层。
在步骤S130中，聚电解质层以及后续的膜层结构的涂布利用层层组装技术(Layer-by-Layer,LBL)。层层组装技术是利用逐层交替沉积的方法，借助各层分子间的弱相互作用(如静电引力、氢键、配位键等)，使层与层自发地缔合形成完整结构、性能稳定、具有某种特定功能的分子聚集体或超分子结构的过程。本实施例中，主要采用静电层层组装技术即利用离子间的静电作用作为成膜的驱动力。在由上述光刻工艺得到均匀涂布的具有容置腔及隔离区结构的黑色光阻层上涂布聚电解质溶液风干后形成聚电解质层。其中，该聚电解质溶液可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种。在具体的实施例中，聚电解质溶液选用聚二烯丙基二甲基氯化铵(Poly Dimethyl Diallyl Ammonium chloride，PDDA)溶液，其浓度为2mg/mL，且在涂布的过程中避开黑色光阻层的隔离区结构。风刀吹干后，形成聚二烯丙基二甲基氯化铵膜层，即聚电解质膜。
S140，在聚电解质层表面涂布金属纳米粒子溶液风干并形成金属粒子层。
步骤S140中，在聚电解质层上进一步涂布金属纳米粒子溶液。其中，该金属纳米粒子溶液可以包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。选用的金属纳米粒子溶液应具有较高的消光系数，所谓消光系数是被测溶液对光的吸收大小值。在本实施例中，金属纳米粒子溶液选用Ag纳米粒子溶液涂布于聚电解质层上风干并形成Ag纳米粒子层。也即是以Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子溶液的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。
此外，步骤S130和步骤S140中，聚电解质溶液和金属纳米粒子溶液的电性相反，即在步骤S130中，聚电解质溶液选用的是阳离子聚二烯丙基二甲基氯化铵，步骤S140中，金属纳米粒子溶液选用带负电的Ag纳米粒子溶液。在其它实施例中，聚电解质溶液和金属纳米粒子溶液的选取只要满足二者的电性相反即可。且利用层层组装技术交替沉积技术可以控制组装膜层的结构和厚度。在具体实施例中，若还需要增加金属纳米粒子层的厚度，则重复上述步骤S130和步骤S140即可，即在金属纳米粒子层上再涂布一层聚电解质溶液风干形成聚电解质层，再在该聚电解质层上涂布金属纳米粒子溶液风干形成金属纳米粒子层，如此反复上述步骤即可得到需要的膜层厚度。
S150，将微发光二极管对位转移至黑色光阻层中。
通过层层组装技术交替沉积技术形成所需要的金属纳米粒子层厚度后，将微发光二极管(Micro LED)对位转移至黑色光阻层中。具体地，将微发光二极管对位转移至黑色光阻层的隔离区结构上。
其中，微发光二极管是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10～50um的微发光二极管单元，若要形成图案化的不同颜色的微发光二极管构成显示区域，则需要通过高精度的转移技术将其转移到玻璃基板上。由于制作微发光二极管的蓝宝石基板尺寸基本上就是硅晶元的尺寸，而制作显示器则是尺寸大得多的玻璃基板，因此必然需要进行多次转运，其中对该微发光二极管的转移需用到特殊的传送工具，该传送工具的作用是将微发光二极管从蓝宝石基板上对位转移至上述黑色光阻层的隔离区上，过程可以简单描述为：首先将传送工具与微发光二极管接触，向传送工具施加电压以产生对微发光二极管的夹持压强，用传送工具拾起微发光二极管，使黑色光阻层的隔离区结构与微发光二极管接触，最后将微发光二极管释放到隔离区结构上。
进一步地，将该微发光二极管对位转移至黑色光阻层的隔离区结构上后，由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。
上述实施方式，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。
请参阅图2，图2为本发明像素结构一实施方式的结构示意图。如图2，该像素10包括：基板11、黑色光阻层12、聚电解质层13、金属纳米粒子层14以及微发光二极管15。
其中，基板11可以为透明材质，具体可以是玻璃或者透明塑料等。
黑色光阻层12，沉积于基板11上，该黑色光阻层12包括容置腔121以及隔离区122，且隔离区122设置于容置腔121内。具体地，该黑色光阻12是一种有机化合物，它受紫外光曝光后，在显影液中的溶解度会发生变化。一般光阻以液态涂覆在基板表面上，曝光后烘烤成固态，其作用是将掩膜板上的图形转移到基板11表面的氧化层中，以便在后续工序中，保护下面的材料(刻蚀或离子注入等)，该黑色光阻层12也可以通过光刻法一步成型，也可以通过光刻法两步成型，即先形成具有容置腔121结构的黑色光阻层12，再在容置腔121中进一步形成隔离区122结构。其中，该隔离区122可以设置为凸起、凹陷或沟槽等结构，且后续的聚电解质层和金属纳米粒子层都不会涂布在该隔离区122部分，目的是隔离微发光二极管15两端的引脚，以使得微发光二极管15不会被短路。在本实施例中，该隔离区122设置成凸起结构，以方便微发光二极管15的放置。
聚电解质层13，涂覆于除隔离区122外的黑色光阻层12上。其中，该聚电解质层13可以为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物等的一种，在具体实施方式中，该聚电解质层13选用聚二烯丙基二甲基氯化铵。
金属纳米粒子层14，覆盖于聚电解质层13上，该金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或由Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金，且选用的金属纳米粒子层应具有较高的消光系数。在本实施例中，选用Ag纳米粒子层作为反射层，当光束由空气入射到该Ag纳米粒子层表面时，进入Ag纳米粒子层内的光振幅迅速衰减，使得进入Ag纳米粒子层内的光能相应减少，而反射光能增加。且选用的金属粒子层的消光系数越大，光振幅衰减越迅速，进入金属内部的光能越少，反射率越高。
在具体实施例中，上述的聚电解质层13和金属纳米粒子层14电性相反，即上述的聚二烯丙基二甲基氯化铵薄膜层带正电，Ag纳米粒子层带负电，二者通过静电作用交替沉积，以达到需要厚度的金属纳米粒子膜层。在其它实施例中，聚电解质层和金属纳米粒子层的选取只要满足二者的电性相反即可。
微发光二极管15，设置于隔离区122上。其中，该微发光二极管15是指利用成熟的发光二极管制备工艺，规模化的在蓝宝石类的基板上通过分子束外延的生长出来的尺寸在10～50um的微发光二极管单元。且其通过对位转移将其设置在黑色光阻层12的隔离区122结构上，且具体设置方法参照上文描述，此处不再赘述。由于上述金属纳米粒子层的光学特性，可以使微发光二极管向周围方向发射的光线，经过折射与反射重新汇聚到出光方向，减少光损失，提高光利用率。
综上所述，本领域技术人员容易理解，本发明提供一种像素结构及制造方法，通过利用层层组装技术以形成具有反射层的像素结构，能够提高微发光二极管的光利用率。
以上仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。
Claims (8)
1.一种提高微发光二极管光利用率的像素制造方法，其特征在于，所述方法包括：
准备一基板；
在所述基板上制造具有容置腔及隔离区的黑色光阻层，其中，所述隔离区设置于所述容置腔内；
在所述黑色光阻层除所述隔离区外的表面涂布聚电解质溶液风干并形成聚电解质层；
在所述聚电解质层表面涂布金属纳米粒子溶液风干并形成金属纳米粒子层，其中，所述聚电解质溶液和所述金属纳米粒子溶液的电性相反；
将所述微发光二极管对位转移至所述黑色光阻层中，其中，所述微发光二极管设置于所述隔离区上。
2.根据权利要求1所述的制造方法，其特征在于，所述黑色光阻层使用光刻法一步成型。
3.根据权利要求1所述的制造方法，其特征在于，所述黑色光阻层使用光刻法两步成型。
4.根据权利要求1所述的制造方法，其特征在于，所述金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。
5.根据权利要求1所述的制造方法，其特征在于，所述聚电解质至少为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物的一种。
6.一种像素结构，其特征在于，所述像素结构包括：
基板；
黑色光阻层，沉积于所述基板上，所述黑色光阻层包括容置腔及隔离区，所述隔离区设置于所述容置腔内；
聚电解质层，所述聚电解质层涂覆于除所述隔离区外的所述黑色光阻层上；
金属纳米粒子层，所述金属纳米粒子层覆盖于所述聚电解质层上，其中，所述聚电解质层和所述金属纳米粒子层电性相反；
微发光二极管，所述微发光二极管设置于所述隔离区上。
7.根据权利要求6所述的像素结构，其特征在于，所述金属纳米粒子包括Au、Ag、Cu、Ni、Co、Pt中的至少一种和/或Au、Ag、Cu、Ni、Co、Pt中至少两种形成的合金。
8.根据权利要求6所述的像素结构，其特征在于，所述聚电解质层至少为聚二烯丙基二甲基氯化铵、聚丙烯酸钠、聚二甲基二烯丙基氯化铵以及丙烯酸-乙烯基吡啶共聚物的一种。
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107978665B (zh) * | 2017-11-16 | 2019-09-17 | 歌尔股份有限公司 | Micro LED制备方法 |
| KR102422091B1 (ko) * | 2017-12-07 | 2022-07-18 | 엘지디스플레이 주식회사 | 발광 소자 및 이를 이용한 표시 장치 |
| CN108461651A (zh) * | 2018-03-28 | 2018-08-28 | 京东方科技集团股份有限公司 | 像素结构及其制备方法、显示面板 |
| CN108428771A (zh) * | 2018-05-16 | 2018-08-21 | 青岛海信电器股份有限公司 | 一种微型发光二极管显示屏的制作方法和装置 |
| CN108538877B (zh) * | 2018-05-17 | 2020-09-01 | 深圳市华星光电技术有限公司 | Micro LED显示面板的制作方法 |
| CN108878626B (zh) * | 2018-06-29 | 2020-02-18 | 京东方科技集团股份有限公司 | 一种显示面板及制作方法、显示装置 |
| TWI721308B (zh) * | 2018-08-17 | 2021-03-11 | 英屬開曼群島商錼創科技股份有限公司 | 微型發光二極體顯示裝置 |
| WO2021104494A1 (zh) * | 2019-11-29 | 2021-06-03 | 海信视像科技股份有限公司 | 一种显示装置 |
| CN111063268A (zh) * | 2019-12-12 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | 微发光二极管显示面板及其制备方法、显示装置 |
| WO2021119881A1 (zh) * | 2019-12-16 | 2021-06-24 | 重庆康佳光电技术研究院有限公司 | 一种micro LED芯片制程方法及micro LED外延片 |
| KR20210140886A (ko) | 2020-05-14 | 2021-11-23 | 삼성전자주식회사 | 디스플레이 모듈 및 디스플레이 모듈의 제조 방법 |
| CN112968079B (zh) * | 2020-07-08 | 2022-05-13 | 重庆康佳光电技术研究院有限公司 | 发光单元、显示背板及其制作方法和芯片及其转移方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877875A (zh) * | 2006-05-17 | 2006-12-13 | 广州南科集成电子有限公司 | Led及制造方法 |
| JP4163455B2 (ja) * | 2002-06-25 | 2008-10-08 | 三洋ジーエスソフトエナジー株式会社 | 電池および電池パック |
| CN104952899A (zh) * | 2015-06-16 | 2015-09-30 | 友达光电股份有限公司 | 发光二极管显示器及其制造方法 |
| CN106229394A (zh) * | 2016-10-19 | 2016-12-14 | 武汉华星光电技术有限公司 | 微发光二极管及其制造方法和显示器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04163455A (ja) * | 1990-10-26 | 1992-06-09 | Nec Kyushu Ltd | フォトマスク |
| CN101866075A (zh) * | 2010-04-30 | 2010-10-20 | 汕头超声显示器（二厂）有限公司 | 反射型tft液晶显示器及其制造方法 |
| JP5940775B2 (ja) * | 2010-08-27 | 2016-06-29 | ローム株式会社 | 液晶表示装置バックライト用ｌｅｄ光源装置および液晶表示装置 |
| KR101806550B1 (ko) * | 2011-06-14 | 2017-12-07 | 엘지이노텍 주식회사 | 발광소자 패키지 |
| US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
| US9035279B2 (en) * | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
| US9657903B2 (en) * | 2013-08-20 | 2017-05-23 | Nthdegree Technologies Worldwide Inc. | Geometrical light extraction structures for printed LEDs |
| JP2015187635A (ja) * | 2014-03-26 | 2015-10-29 | 株式会社Ｊｏｌｅｄ | 色変化部材、光装置、表示装置および電子機器 |
| KR20170026958A (ko) * | 2015-08-31 | 2017-03-09 | 삼성디스플레이 주식회사 | 표시장치 |
| CN105976725B (zh) | 2016-06-20 | 2019-04-02 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板 |
-
2017
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4163455B2 (ja) * | 2002-06-25 | 2008-10-08 | 三洋ジーエスソフトエナジー株式会社 | 電池および電池パック |
| CN1877875A (zh) * | 2006-05-17 | 2006-12-13 | 广州南科集成电子有限公司 | Led及制造方法 |
| CN104952899A (zh) * | 2015-06-16 | 2015-09-30 | 友达光电股份有限公司 | 发光二极管显示器及其制造方法 |
| CN106229394A (zh) * | 2016-10-19 | 2016-12-14 | 武汉华星光电技术有限公司 | 微发光二极管及其制造方法和显示器 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265522A (zh) * | 2019-06-28 | 2019-09-20 | 上海天马微电子有限公司 | 显示面板、显示装置和显示面板的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6899917B2 (ja) | 2021-07-07 |
| EP3605616A4 (en) | 2020-11-18 |
| US20180315909A1 (en) | 2018-11-01 |
| US10367128B2 (en) | 2019-07-30 |
| CN106784203A (zh) | 2017-05-31 |
| WO2018176583A1 (zh) | 2018-10-04 |
| KR102245587B1 (ko) | 2021-04-27 |
| PL3605616T3 (pl) | 2022-06-20 |
| EP3605616A1 (en) | 2020-02-05 |
| KR20190131546A (ko) | 2019-11-26 |
| EP3605616B1 (en) | 2022-01-26 |
| JP2020511008A (ja) | 2020-04-09 |
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