CN106784046A - A kind of back contact structure, preparation method and cadmium telluride film solar cells - Google Patents
A kind of back contact structure, preparation method and cadmium telluride film solar cells Download PDFInfo
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- CN106784046A CN106784046A CN201611236907.3A CN201611236907A CN106784046A CN 106784046 A CN106784046 A CN 106784046A CN 201611236907 A CN201611236907 A CN 201611236907A CN 106784046 A CN106784046 A CN 106784046A
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- molybdenum
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- back contact
- contact structure
- nitride layers
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 166
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 166
- 239000011733 molybdenum Substances 0.000 claims abstract description 166
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims abstract description 78
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims abstract description 78
- 239000007789 gas Substances 0.000 claims description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 66
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 51
- 239000001301 oxygen Substances 0.000 claims description 51
- 229910052760 oxygen Inorganic materials 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- 239000013077 target material Substances 0.000 claims description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052802 copper Inorganic materials 0.000 claims description 25
- 239000010949 copper Substances 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 21
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000005477 sputtering target Methods 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 239000005751 Copper oxide Substances 0.000 claims description 13
- 229910000431 copper oxide Inorganic materials 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000004062 sedimentation Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 74
- 238000001755 magnetron sputter deposition Methods 0.000 description 52
- 229910052786 argon Inorganic materials 0.000 description 37
- 230000008021 deposition Effects 0.000 description 37
- 239000010408 film Substances 0.000 description 19
- 230000008859 change Effects 0.000 description 17
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 15
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 15
- 229960004643 cupric oxide Drugs 0.000 description 13
- 239000004020 conductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910004613 CdTe Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention discloses a kind of back contact structure, including molybdenum oxide layer, molybdenum layer and the Molybdenum nitride layers for setting gradually；The back contact structure can reduce the contact berrier with cadmium telluride, form Ohmic contact, so that the performance of cadmium telluride film solar cells is improved, meanwhile, reduce production cost.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of back contact structure, preparation method and cadmium telluride
Thin film solar cell.
Background technology
It is renewable that environmental pollution and energy shortage have turned into the key factor of the sustainable development of restriction society, solar energy etc.
Energy technology represents the developing direction of clean energy resource, will as the solar energy power generating of most sustainable development desired characteristics
Into mankind's energy resource structure and turn into the important component of basic energy resource, China is also harmonious sustainable as building
The important foundation condition of the new society of development is listed in national medium ＆ long term sci-tech development program.
Cadmium telluride film solar cells are high, with low cost because of its transformation efficiency, can large-scale industrial production the characteristics of, quilt
It is described as one of most promising solar cell.The p-type CdTe layer of cadmium telluride film solar cells, the work function of p-type CdTe layer is
5.7eV, the work function higher than most metals material is high, metal material is directly prepared on CdTe thin film surface as back of the body electricity
Pole, then the interface of CdTe and metal can form Schottky barrier, hinder the transmission of photo-generated carrier, reduce battery performance.Be
Semiconductor back contact is introduced between CdTe and back electrode to reduce obstruction of the contact berrier to hole transport.It is typically employed in
Semiconductor back contact is introduced between CdTe and back electrode to reduce obstruction of the contact berrier to hole transport.Conventional at present
Back contact material has zinc telluridse (ZnTe), telluride mercury (HgTe), antimony telluride (Sb2Te3) etc., these materials are generally compound half
Conductor material, price is costly so that cadmium telluride film solar cells it is relatively costly.
The content of the invention
In view of this, it is described this application provides a kind of back contact structure, preparation method and cadmium telluride film solar cells
Back contact structure can reduce the contact berrier with cadmium telluride, Ohmic contact be formed, so as to improve cadmium telluride film solar cells
Performance, meanwhile, reduce production cost.
Above-mentioned technical problem is not solved, the technical scheme that the application is provided is：
A kind of back contact structure, including molybdenum oxide layer, molybdenum layer and the Molybdenum nitride layers for setting gradually are provided.
Preferably, the back contact structure also include layers of copper or copper oxide, in the layers of copper or the copper oxide according to
It is secondary that the molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers are set.
Preferably, gradually reduced near the molybdenum layer oxygen content in the molybdenum oxide layer.
Preferably, gradually reduced near the molybdenum layer nitrogen content in the Molybdenum nitride layers.
Preferably, the back contact structure thickness is 120~300nm.
Preferably, the molybdenum oxide layer thickness is 20~50nm.
Preferably, the molybdenum layer thickness is 80~180nm.
Preferably, the Molybdenum nitride layers thickness is 20~50nm.
Preferably, the copper layer thickness is 2~10nm.
Preferably, the copper oxide thickness is 2~10nm.
Present invention also provides a kind of preparation method of back contact structure, including：Oxidation is sequentially depositing on the semiconductor layer
Made annealing treatment after molybdenum layer, molybdenum layer and Molybdenum nitride layers, the molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers form the back of the body and connect
Touch structure.
Preferably, the preparation method is specially on the semiconductor layer molybdenum oxide layer described in sputtering sedimentation successively, the molybdenum
Layer and Molybdenum nitride layers after annealing treatment, the molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers form back contact structure.
Preferably, the annealing temperature is 100~300 DEG C.
Preferably, the annealing temperature is 150~250 DEG C.
Preferably, the annealing temperature is 200 DEG C.
Preferably, the annealing time is 10~90min.
Preferably, the annealing time is 40min.
Preferably, the annealing pressure is 10000~1000000Pa.
Preferably, molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers described in sputtering sedimentation on the semiconductor layer.
Preferably, it is described to be sputtered to magnetron sputtering.
Preferably, the sputtering target material be molybdenum target material, the molybdenum oxide layer sputter gas be inert gas and oxygen, it is described
Molybdenum layer sputter gas are inert gas, and the Molybdenum nitride layers sputter gas are inert gas and nitrogen.
Preferably, the inert gas is argon gas.
Preferably, the sputtering pressure is 1~4Pa.
Preferably, the semiconductor layer temperature is 20~200 DEG C.
Preferably, the semiconductor layer is by activation process.
Preferably, between the semiconductor layer and the molybdenum oxide layer also copper layer or copper oxide, the layers of copper or
The copper oxide forms back contact structure with the molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers.
Preferably, sent out using electron beam evaporation, magnetron sputtering or diffusion method the deposition layers of copper or the copper oxide.
A kind of present invention also provides cadmium telluride film solar cells including described above back contact structure above-mentioned connects
The back contact structure obtained in the preparation method of contact layer structure.
Preferably, including set gradually substrate, transparent conductive oxide film, semiconductor layer, the back contact structure, envelope
Package material and backboard.
Preferably, the substrate and the backboard are glass.
Preferably, the transparent conductive oxide film is transparent conductive oxide.
Preferably, the semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer.
It is molybdenum target material that the application uses sputtering target material, sputtering sedimentation molybdenum oxide layer process on semiconductor layer, is gradually stepped up lazy
Property gas and oxygen quality ratio, make gradually to be reduced near molybdenum layer oxygen content in molybdenum oxide layer；Sputtering sedimentation Molybdenum nitride layers on molybdenum layer
Process, gradually reduce inert gas makes gradually to be reduced near molybdenum layer nitrogen content in Molybdenum nitride layers with nitrogen mass ratio.(ask inventor
Confirm)
Compared with prior art, its detailed description is as follows for the application：
The application is modified to molybdenum, sets gradually molybdenum oxide layer, molybdenum layer and Molybdenum nitride layers；The molybdenum oxide is set
Layer, first, the molybdenum oxide layer has work function higher, can reduce obstruction of the contact berrier to hole transport, reduces telluride
The contact berrier of cadmium and back contact structure, can form preferable Ohmic contact with cadmium-telluride layer, and second, the molybdenum oxide layer is not
Easily with air in water and carbon dioxide react, improve weatherability, it is ensured that electric conductivity, so as to improve Cadimium telluride thin film too
The performance in positive electricity pond；The molybdenum layer is set, first, with preferable electric conductivity, electric transmission is carried out as metal level, second,
The molybdenum layer can form diffusion transition with the molybdenum oxide layer, and the mismatch ratio of lattice is relatively low, and interfacial effect is smaller；Set described
Molybdenum nitride layers, first, the molybdenum layer to be protected, improvement weatherability, first, the Molybdenum nitride layers conductance is higher, is beneficial to
Connected with busbar；
Gradually reduced near the molybdenum layer oxygen content in herein described molybdenum oxide layer, advantageously reduce molybdenum oxide layer and molybdenum
Interface potential barrier between layer, improves the performance of cadmium telluride film solar cells；
Gradually reduced near the molybdenum layer oxygen content in herein described Molybdenum nitride layers, advantageously reduce Molybdenum nitride layers and molybdenum
Interface potential barrier between layer, improves the performance of cadmium telluride film solar cells；
The application sputtering target material selects molybdenum target material, is the excellent metal simple-substance of electric conductivity, reduces production cost；
Brief description of the drawings
Fig. 1 is Mo of the present inventionxO-Mo-MoxThe structural representation of N back contact structures；
Fig. 2 is Cu-Mo of the present inventionxO-Mo-MoxThe structural representation of N back contact structures；
Fig. 3 is Cu-Mo of the present inventionxO-Mo-MoxThe structural representation of N back contact structures；
Fig. 4 is the structural representation of the cadmium telluride film solar cells of embodiment of the present invention 16；
Fig. 5 is the structural representation of the cadmium telluride film solar cells of embodiment of the present invention 17.
Specific embodiment
In order that those skilled in the art more fully understands the technical scheme of the application, implement below in conjunction with the present invention
Accompanying drawing in example, carries out clear, complete description, it is clear that described embodiment to the technical scheme in the embodiment of the present invention
Only a part of embodiment of the invention, rather than whole embodiments.Based on embodiments of the invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Embodiment 1
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa in pressure, 90min, the molybdenum oxide is made annealing treatment under the conditions of 100 DEG C
Layer, the molybdenum layer and the Molybdenum nitride layers form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, gradually reduces in the Molybdenum nitride layers near the molybdenum layer nitrogen content.
Embodiment 2
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, the oxygen is made annealing treatment under the conditions of 150 DEG C
Change molybdenum layer, the molybdenum layer and the Molybdenum nitride layers and form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, gradually reduces in the Molybdenum nitride layers near the molybdenum layer nitrogen content.
Embodiment 3
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa a in pressure, 40min, the oxidation is made annealing treatment under the conditions of 200 DEG C
Molybdenum layer, the molybdenum layer and the Molybdenum nitride layers form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, gradually reduces in the Molybdenum nitride layers near the molybdenum layer nitrogen content.
Embodiment 4
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, the oxygen is made annealing treatment under the conditions of 250 DEG C
Change molybdenum layer, the molybdenum layer and the Molybdenum nitride layers and form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, gradually reduces in the Molybdenum nitride layers near the molybdenum layer nitrogen content.
Embodiment 5
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 10min, the oxygen is made annealing treatment under the conditions of 300 DEG C
Change molybdenum layer, the molybdenum layer and the Molybdenum nitride layers and form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, gradually reduces in the Molybdenum nitride layers near the molybdenum layer nitrogen content.
Embodiment 6
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, the oxygen is made annealing treatment under the conditions of 200 DEG C
Change molybdenum layer, the molybdenum layer and the Molybdenum nitride layers and form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, gradually reduces in the Molybdenum nitride layers near the molybdenum layer nitrogen content.
Embodiment 7
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, described half is made annealing treatment under the conditions of 200 DEG C
The hot steaming method copper layer of electron beam, the layers of copper, the molybdenum oxide layer, the molybdenum are used between conductor layer and the molybdenum oxide layer
Layer and the Molybdenum nitride layers form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, the copper layer thickness is 2~10nm, is gradually reduced near the molybdenum layer nitrogen content in the Molybdenum nitride layers.
Embodiment 8
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, described half is made annealing treatment under the conditions of 200 DEG C
Between conductor layer and the molybdenum oxide layer use the hot steaming method deposited oxide layers of copper of electron beam, the cupric oxide, the molybdenum oxide layer,
The molybdenum layer and the Molybdenum nitride layers form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, the copper oxide thickness is 2~10nm, is gradually reduced near the molybdenum layer nitrogen content in the Molybdenum nitride layers.
Embodiment 9
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, described half is made annealing treatment under the conditions of 200 DEG C
Magnetron sputtering method copper layer, the layers of copper, the molybdenum oxide layer, the molybdenum layer are used between conductor layer and the molybdenum oxide layer
Back contact structure is formed with the Molybdenum nitride layers.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, the copper layer thickness is 2~10nm, is gradually reduced near the molybdenum layer nitrogen content in the Molybdenum nitride layers.
A kind of preparation method of the back contact structure of embodiment 10, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min is made annealing treatment under the conditions of 200 DEG C, described half
Magnetron sputtering method deposited oxide layers of copper, the cupric oxide, the molybdenum oxide layer, institute are used between conductor layer and the molybdenum oxide layer
State molybdenum layer and the Molybdenum nitride layers form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, the copper oxide thickness is 2~10nm, is gradually reduced near the molybdenum layer nitrogen content in the Molybdenum nitride layers.
Embodiment 11
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, described half is made annealing treatment under the conditions of 200 DEG C
Diffusion method copper layer, the layers of copper, the molybdenum oxide layer, the molybdenum layer and institute are used between conductor layer and the molybdenum oxide layer
State Molybdenum nitride layers and form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, the copper layer thickness is 2~10nm, is gradually reduced near the molybdenum layer nitrogen content in the Molybdenum nitride layers.
Embodiment 12
A kind of preparation method of back contact structure, including：
Using molybdenum target material as sputtering target material, sputtering pressure is 1~4Pa, magnetron sputtering operation is carried out, at 20~200 DEG C
On semiconductor layer after activated treatment.Using argon gas and oxygen as sputter gas, magnetron sputtering deposition molybdenum oxide layer；In oxidation
On molybdenum layer, using argon gas as sputter gas, magnetron sputtering deposition molybdenum layer；On molybdenum layer, using argon gas and nitrogen as sputter gas,
After magnetron sputtering deposition Molybdenum nitride layers；It is 101.325kPa Pa in pressure, 40min, described half is made annealing treatment under the conditions of 200 DEG C
Diffusion method deposited oxide layers of copper, the cupric oxide, the molybdenum oxide layer, the molybdenum are used between conductor layer and the molybdenum oxide layer
Layer and the Molybdenum nitride layers form back contact structure.
The semiconductor layer includes cadmium sulfide layer and cadmium-telluride layer；The molybdenum oxide layer thickness is 20~50nm, the oxygen
Gradually reduced near the molybdenum layer oxygen content in change molybdenum layer；The molybdenum layer thickness is 80~180nm, and the Molybdenum nitride layers thickness is
20~50nm, the copper oxide thickness is 2~10nm, is gradually reduced near the molybdenum layer nitrogen content in the Molybdenum nitride layers.
Embodiment 13
As shown in figure 1, a kind of back contact structure 101, including molybdenum oxide layer 102, molybdenum layer 103 and the molybdenum nitride for setting gradually
Layer 104.
Wherein, gradually reduced near the oxygen content of the molybdenum layer 103 in the molybdenum oxide layer 102, in the Molybdenum nitride layers 104
Gradually reduced near the nitrogen content of the molybdenum layer 103, the thickness of the molybdenum oxide layer 102 is 20~50nm, the thickness of the molybdenum layer 103 is
80~180nm, the thickness of the Molybdenum nitride layers 104 is 120~50nm,
Embodiment 14
A kind of back contact structure 201, including layers of copper 205, molybdenum oxide layer 202, molybdenum layer 203 and the Molybdenum nitride layers for setting gradually
204。
Wherein, gradually reduced near the oxygen content of the molybdenum layer 203 in the molybdenum oxide layer 202, in the Molybdenum nitride layers 204
Gradually reduced near the nitrogen content of the molybdenum layer 203.The thickness of the layers of copper 205 is 2~10nm, and the thickness of the molybdenum oxide layer 202 is
20~50nm, the thickness of the molybdenum layer 203 is 80~180nm, and the thickness of the Molybdenum nitride layers 204 is 20~50nm,
Embodiment 15
As shown in figure 3, a kind of back contact structure 301, including copper oxide 305, the molybdenum oxide layer 302, molybdenum for setting gradually
Layer 303 and Molybdenum nitride layers 304.
Wherein, gradually reduced near the oxygen content of the molybdenum layer 303 in the molybdenum oxide layer 302, in the Molybdenum nitride layers 304
Gradually reduced near the nitrogen content of the molybdenum layer 303.The thickness of the copper oxide 305 is 2~10nm, and the molybdenum oxide layer 302 is thick
It is 20~50nm to spend, and the thickness of the molybdenum layer 303 is 80~180nm, and the thickness of the Molybdenum nitride layers 304 is 20~50nm,
Embodiment 16
As shown in figure 4, a kind of cadmium telluride film solar cells, including substrate 401, the transparent conductive oxide film for setting gradually
402nd, semiconductor layer, back contact structure 405, encapsulating material 406 and backboard 407.
Wherein, the back contact structure 405 is the back contact structure that embodiment 1 is formed, the substrate and institute
Backboard is stated for glass, the transparent conductive oxide film is transparent conductive oxide, the semiconductor layer includes the He of cadmium sulfide layer 403
Cadmium-telluride layer 404.
Embodiment 17
As shown in figure 5, a kind of cadmium telluride film solar cells, including substrate 501, the transparent conductive oxide film for setting gradually
502nd, semiconductor layer, back contact structure 505, encapsulating material 506 and backboard 507.
Wherein, the back contact structure 505 is the back contact structure that embodiment 14 is provided, the substrate and institute
Backboard is stated for glass, the transparent conductive oxide film is transparent conductive oxide, the semiconductor layer includes the He of cadmium sulfide layer 503
Cadmium-telluride layer 504.
The above is only the preferred embodiment of the present invention, it is noted that it is right that above-mentioned preferred embodiment is not construed as
Limitation of the invention, protection scope of the present invention should be defined by claim limited range.For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, these change
Enter and retouch and also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of back contact structure, it is characterised in that including the molybdenum oxide layer, molybdenum layer and the Molybdenum nitride layers that set gradually.
2. back contact structure according to claim 1, it is characterised in that the back contact structure also includes layers of copper or oxidation
The molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers are set gradually on layers of copper, the layers of copper or the copper oxide.
3. back contact structure according to claim 1, it is characterised in that contain near the molybdenum layer oxygen in the molybdenum oxide layer
Amount is gradually reduced.
4. back contact structure according to claim 1, it is characterised in that contain near the molybdenum layer nitrogen in the Molybdenum nitride layers
Amount is gradually reduced.
5. a kind of preparation method of back contact structure, it is characterised in that including：Be sequentially depositing on the semiconductor layer molybdenum oxide layer,
Molybdenum layer and Molybdenum nitride layers, the molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers form back contact structure.
6. preparation method according to claim 5, it is characterised in that the preparation method be specially on the semiconductor layer according to
The treatment of molybdenum oxide layer, the molybdenum layer and the Molybdenum nitride layers after annealing, the molybdenum oxide layer, the molybdenum layer described in secondary sputtering sedimentation
Back contact structure is formed with the Molybdenum nitride layers.
7. preparation method according to claim 5, it is characterised in that molybdenum oxide described in sputtering sedimentation on the semiconductor layer
Layer, the molybdenum layer and the Molybdenum nitride layers.
8. preparation method according to claim 7, it is characterised in that the sputtering target material is molybdenum target material, the molybdenum oxide
Layer sputter gas are inert gas and oxygen, and the molybdenum layer sputter gas are inert gas, and the Molybdenum nitride layers sputter gas are
Inert gas and nitrogen.
9. preparation method according to claim 5, it is characterised in that between the semiconductor layer and the molybdenum oxide layer also
Copper layer or copper oxide, the layers of copper or the copper oxide and the molybdenum oxide layer, the molybdenum layer and the molybdenum nitride
Layer forms back contact structure.
10. a kind of cadmium telluride film solar cells, it is characterised in that including the back of the body according to any one of Claims 1 to 4
The back contact knot obtained in the preparation method of the back contact structure any one of contact structures or claim 5~9
Structure.
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