CN106784023A - 一种结势垒肖特基二极管 - Google Patents
一种结势垒肖特基二极管 Download PDFInfo
- Publication number
- CN106784023A CN106784023A CN201611225372.XA CN201611225372A CN106784023A CN 106784023 A CN106784023 A CN 106784023A CN 201611225372 A CN201611225372 A CN 201611225372A CN 106784023 A CN106784023 A CN 106784023A
- Authority
- CN
- China
- Prior art keywords
- type semiconductor
- conductive type
- area
- schottky diode
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 210000002615 epidermis Anatomy 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 67
- 239000011229 interlayer Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241001661355 Synapsis Species 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611225372.XA CN106784023B (zh) | 2016-12-27 | 2016-12-27 | 一种结势垒肖特基二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611225372.XA CN106784023B (zh) | 2016-12-27 | 2016-12-27 | 一种结势垒肖特基二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106784023A true CN106784023A (zh) | 2017-05-31 |
CN106784023B CN106784023B (zh) | 2019-09-20 |
Family
ID=58921562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611225372.XA Active CN106784023B (zh) | 2016-12-27 | 2016-12-27 | 一种结势垒肖特基二极管 |
Country Status (1)
Country | Link |
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CN (1) | CN106784023B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108231866A (zh) * | 2017-12-07 | 2018-06-29 | 中国电子科技集团公司第五十五研究所 | 一种提高浪涌能力的碳化硅肖特基二极管结构及制备方法 |
CN113471301A (zh) * | 2020-03-31 | 2021-10-01 | 比亚迪半导体股份有限公司 | 一种沟槽肖特基二极管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
CN102738213A (zh) * | 2011-04-06 | 2012-10-17 | 罗姆股份有限公司 | 半导体装置 |
CN103855226A (zh) * | 2012-12-06 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | 含沟槽结构肖特基嵌位二极管及终端结构 |
CN105957864A (zh) * | 2015-03-09 | 2016-09-21 | 罗伯特·博世有限公司 | 具有沟槽型mos势垒肖特基二极管的半导体装置 |
-
2016
- 2016-12-27 CN CN201611225372.XA patent/CN106784023B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
CN102738213A (zh) * | 2011-04-06 | 2012-10-17 | 罗姆股份有限公司 | 半导体装置 |
CN103855226A (zh) * | 2012-12-06 | 2014-06-11 | 上海华虹宏力半导体制造有限公司 | 含沟槽结构肖特基嵌位二极管及终端结构 |
CN105957864A (zh) * | 2015-03-09 | 2016-09-21 | 罗伯特·博世有限公司 | 具有沟槽型mos势垒肖特基二极管的半导体装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108231866A (zh) * | 2017-12-07 | 2018-06-29 | 中国电子科技集团公司第五十五研究所 | 一种提高浪涌能力的碳化硅肖特基二极管结构及制备方法 |
CN108231866B (zh) * | 2017-12-07 | 2020-07-21 | 中国电子科技集团公司第五十五研究所 | 一种提高浪涌能力的碳化硅肖特基二极管结构及制备方法 |
CN113471301A (zh) * | 2020-03-31 | 2021-10-01 | 比亚迪半导体股份有限公司 | 一种沟槽肖特基二极管及其制备方法 |
CN113471301B (zh) * | 2020-03-31 | 2023-10-17 | 比亚迪半导体股份有限公司 | 一种沟槽肖特基二极管及其制备方法 |
Also Published As
Publication number | Publication date |
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CN106784023B (zh) | 2019-09-20 |
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PB01 | Publication | ||
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Effective date of registration: 20190104 Address after: Room 1303, Building B, Kangxin Garden, 569 Wensan Road, Xihu District, Hangzhou City, Zhejiang 310000 Applicant after: Hangzhou Yizheng Technology Co., Ltd. Address before: 523000 productivity building 406, high tech Industrial Development Zone, Songshan Lake, Dongguan, Guangdong Applicant before: Dongguan Lianzhou Intellectual Property Operation Management Co.,Ltd. |
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Effective date of registration: 20201225 Address after: No.18-91, Gongye Road, South Taihu high tech Industrial Park, Wuxing District, Huzhou City, Zhejiang Province Patentee after: Zhejiang julibao Textile Technology Co., Ltd Address before: Room 1303, building B, Kangxin garden, 569 Wensan Road, Xihu District, Hangzhou City, Zhejiang Province Patentee before: HANGZHOU EZSOFT TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210115 Address after: 226500 group 27, shiliju, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Nantong Wangfeng Electronic Technology Co.,Ltd. Address before: No.18-91, Gongye Road, South Taihu high tech Industrial Park, Wuxing District, Huzhou City, Zhejiang Province Patentee before: Zhejiang julibao Textile Technology Co., Ltd |