CN106783575A - The wet etching method of silicon chip and the production method of solar cell - Google Patents
The wet etching method of silicon chip and the production method of solar cell Download PDFInfo
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- CN106783575A CN106783575A CN201510810053.4A CN201510810053A CN106783575A CN 106783575 A CN106783575 A CN 106783575A CN 201510810053 A CN201510810053 A CN 201510810053A CN 106783575 A CN106783575 A CN 106783575A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 223
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 222
- 239000010703 silicon Substances 0.000 title claims abstract description 222
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000001039 wet etching Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 98
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 47
- 239000011259 mixed solution Substances 0.000 claims abstract description 45
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 abstract description 9
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 abstract description 9
- 239000005297 pyrex Substances 0.000 abstract description 9
- 210000004027 cell Anatomy 0.000 description 25
- 239000010408 film Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910021426 porous silicon Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000009194 climbing Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 230000010148 water-pollination Effects 0.000 description 2
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of wet etching method of silicon chip and the production method of solar cell, comprises the following steps：1）Each surface of silicon chip using the mixed solution of hydrofluoric acid and nitric acid to being obtained after diffusion section carries out rinse；2）Using deionized water to step 1）Each surface for the silicon chip for obtaining is rinsed；3）By step 2）The silicon chip for obtaining carries out dry tack free；4）Using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid to step 3）The side and the back side of the silicon chip for obtaining perform etching.First each surface of the silicon chip using the mixed solution of hydrofluoric acid and nitric acid to being obtained after diffusion section carries out rinse, hydrophilic phosphorus silicon or Pyrex can rapidly be etched away in the mixed solution of the hydrofluoric acid of rich HF and nitric acid, so that the surrounding of silicon chip is presented repellency, when reusing the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid and carrying out wet etching to silicon chip, etching trace will not be formed in silicon chip surrounding, so as to improve the yield and efficiency of silicon chip.
Description
Technical field
Field, the life of the wet etching method and solar cell of more particularly to a kind of silicon chip are utilized the invention belongs to solar photoelectric
Product method.
Background technology
Solar energy is that the inexhaustible regenerative resource of the mankind is also clean energy resource, and any environmental pollution is not produced.
In solar energy effectively in the middle of, big sun energy solar photovoltaic utilization is research field with fastest developing speed in the last few years, most active, is
One of project for wherein attracting most attention.Therefore, people develop and develop solar cell.Solar cell is imitated by photoelectricity
Should or Photochemical effects directly luminous energy is converted into the device of electric energy.The film type solar electricity for being worked with broadcasting and TV effect at this stage
Pond is main flow, its principle be solar irradiation on semiconductor PN, new hole-electron pair is formed, in the work of PN junction electric field
Under, photohole flows to P areas by N areas, and photoelectron flows to N areas by P areas, and electric current is formed after connecting circuit.Due to each
Great demand of the state to the protection of environment and to regenerating clean energy resource, solar cell is opened using solar energy on a large scale for human future
Wide prospect is warded off.
According to the difference of material, solar cell can be divided into silicon solar cell, multi-element compounds thin-film solar cells, gather
Compound multiple modification electrode type solar cell, nano solar battery and organic solar batteries etc., wherein silicon solar cell
It is to develop most ripe solar cell at present, leading position is occupied in the application.
Manufacturing the conventional method of silicon solar cell is：The clean p-type in surface or N-type silicon chip are first passed around into making herbs into wool work first
Sequence forms suede structure；Secondly in silicon chip surface diffusion, the emitter stage of N+ or P+ is formed, is gone by wet etching
Fall the diffusion layer at silicon chip side and the back side；Then one layer of SiN film with antireflective function is re-formed in its front surface；Finally
Metal electrode is made respectively at the positive back side of silicon chip, and crystal silicon solar batteries are formed by sintering process.
Wherein, foreign matter of phosphor or boron, phosphorus or boron are produced during diffusion can inevitably diffuse to silicon chip side and the back side, finally
Cause short circuit.Therefore, it is necessary to performed etching to the doped silicon of silicon chip of solar cell side and the back side, with remove silicon chip side and
The diffusion layer at the back side.Diffusion can also form phosphorus silicon or Pyrex in diffusion layer surface simultaneously, influence battery efficiency, therefore
It is also required to removal.Wet etching is typically using the phosphorus silicon or boron on each surface of the mixed liquor removal silicon chip of hydrofluoric acid, nitric acid and sulfuric acid
Silica glass and remove the diffusion layer at battery side and the back side.Fig. 1 is referred to, because phosphorus silicon or Pyrex have hydrophily,
When being performed etching in mixed liquor of the silicon chip in hydrofluoric acid, nitric acid and sulfuric acid, the edge of the silicon chip 11 can generate a kind of furvous
Porous silicon 12, with the carrying out of reaction, the area of the porous silicon 12 constantly expands, so as in the surrounding of the silicon chip 11
Form an etched mark 13 (etchmark)；After the etched mark 13 reaches certain width, can be to the good of the silicon chip 11
Rate and efficiency produce harmful effect.
The content of the invention
The present invention is directed to deficiencies of the prior art, it is proposed that a kind of wet etching method of silicon chip and solar cell
Production method, during for solving to remove dephosphorization silicon or Pyrex using the mixed liquor of hydrofluoric acid, nitric acid and sulfuric acid in the prior art,
Because phosphorus silicon or Pyrex have hydrophily, porous silicon easily is formed in silicon chip edge, and then etching can be formed in silicon chip surrounding
Trace, so as to the yield and efficiency to silicon chip produce dysgenic problem.
In order to achieve the above objects and other related objects, the present invention provides a kind of wet etching method of silicon chip, comprises the following steps：
1) each surface of the silicon chip using the mixed solution of hydrofluoric acid and nitric acid to being obtained after diffusion section carries out rinse；
2) using deionized water to step 1) each surface of the silicon chip for obtaining is rinsed；
3) by step 2) silicon chip that obtains carries out dry tack free；
4) using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid to step 3) side of the silicon chip that obtains and the back side carves
Erosion.
As a kind of preferred scheme of the wet etching method of silicon chip of the invention, step 1) in, the hydrofluoric acid and nitric acid
Hydrofluoric acid and the mass concentration percentage of nitric acid are 5 in mixed solution:1~10:1.
As a kind of preferred scheme of the wet etching method of silicon chip of the invention, step 1) in, in independent slot-type device
Each surface of the silicon chip to being obtained after diffusion section carries out rinse, has multiple rollers, diffusion in the slot-type device
The silicon chip obtained after section passes through the slot-type device in the way of floating.
As a kind of preferred scheme of the wet etching method of silicon chip of the invention, step 1) in, the time of rinse is less than or waits
In 10 seconds.
As a kind of preferred scheme of the wet etching method of silicon chip of the invention, step 4) after, also including using deionization
Water is to step 4) each surface of the silicon chip for obtaining is rinsed, and the step of carry out dry tack free to the silicon chip.
As a kind of preferred scheme of the wet etching method of silicon chip of the invention, to the silicon chip by the way of spray or rinse
Each surface be rinsed.
As a kind of preferred scheme of the wet etching method of silicon chip of the invention, to the silicon chip by the way of drying or drying
Surface is dried.
As a kind of preferred scheme of the wet etching method of silicon chip of the invention, to the silicon in chain equipment or slot-type device
Each surface of piece is rinsed.
The present invention also provides a kind of production method of solar cell, and the production method of the solar cell is comprised the following steps：
1) provide detection qualified silicon chip；
2) surface wool manufacturing is carried out to the silicon chip；
3) system knot is diffused in the silicon chip after surface wool manufacturing；
4) using the wet etching method of silicon chip as any one of claim 1 to 8 to step 3) silicon that obtains
Piece carries out wet etching；
5) in step 4) the front side of silicon wafer coated with antireflection film that obtains；
6) electrode is made at the back side of the front of the silicon chip and the silicon chip；
7) by step 6) silicon chip that obtains is sintered.
As a kind of preferred scheme of the production method of solar cell of the invention, in step 1) and step 2) between, also wrap
Include the step of being cleaned to the silicon chip surface.
A kind of wet etching method of silicon chip of the invention and the production method of solar cell have the beneficial effect that：Silicon of the invention
The wet etching method of piece enters first by each surface of the silicon chip of the mixed solution to being obtained after diffusion section of hydrofluoric acid and nitric acid
Row rinse, the mixed solution for then reusing hydrofluoric acid, nitric acid and sulfuric acid carries out wet etching to silicon chip, first using hydrofluoric acid and
Each surface of silicon chip of the mixed solution of nitric acid to being obtained after diffusion section carries out rinse, hydrophilic phosphorus silicon or Pyrex meeting
Etched away rapidly in the hydrofluoric acid of rich HF and the mixed solution of nitric acid so that the surrounding of silicon chip is presented repellency, reuses
When the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid carries out wet etching to silicon chip, mixed solution is difficult occur " climbing liquid " phenomenon again,
More etching trace will not will not be formed in silicon chip surrounding, so as to improve the yield and efficiency of silicon chip in silicon chip edge porous silicon.
Brief description of the drawings
Fig. 1 uses the mixed liquor wet-cleaning of hydrofluoric acid, nitric acid and sulfuric acid in silicon after being shown as silicon chip diffusion in the prior art
Piece surface produces the schematic diagram of etching trace.
Fig. 2 is shown as the flow chart of the wet etching method of silicon chip of the invention.
Fig. 3 is shown as the flow chart of the production method of solar cell of the invention.
Component label instructions
11 silicon chips
12 porous silicons
13 etching traces
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be as disclosed by this specification
Content understand other advantages of the invention and effect easily.The present invention can also add by way of a different and different embodiment
To implement or apply, the various details in this specification can also be based on different viewpoints and application, without departing from essence of the invention
Various modifications or alterations are carried out under god.
Refer to Fig. 2 to Fig. 3.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, though component count, shape when only display is with relevant component in the present invention rather than according to actual implementation in diagram
And size is drawn, it is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout
Kenel is likely to increasingly complex.
Embodiment one
Fig. 2 is referred to, the present invention provides a kind of wet etching method of silicon chip, and the wet etching method of the silicon chip is including following
Step：
1) each surface of the silicon chip using the mixed solution of hydrofluoric acid and nitric acid to being obtained after diffusion section carries out rinse；
2) using deionized water to step 1) each surface of the silicon chip for obtaining is rinsed；
3) by step 2) silicon chip that obtains carries out dry tack free；
4) using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid to step 3) side of the silicon chip that obtains and the back side carves
Erosion.
In step 1) in, the S1 steps in Fig. 2 are referred to, using the mixed solution of hydrofluoric acid and nitric acid to being obtained after diffusion section
To each surface of silicon chip carry out rinse.
As an example, hydrofluoric acid and the mass concentration percentage of nitric acid are 5 in the mixed solution of the hydrofluoric acid and nitric acid:1~10:1.
In the mixed solution, the concentration of hydrofluoric acid is higher so that the mixed solution is richness HF systems, molten using the mixing
When liquid carries out rinse to the silicon chip, hydrophilic phosphorus silicon or Pyrex that the silicon chip is produced in diffusion can be caused
Etched away rapidly so that the surrounding of silicon chip is presented repellency, in the follow-up mixed solution pair using hydrofluoric acid, nitric acid and sulfuric acid
When silicon chip carries out wet etching, the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid is difficult occur " climbing liquid " phenomenon again, will not be in silicon
Piece edge foraminous silicon, more will not form etching trace, so as to improve the yield and efficiency of silicon chip in silicon chip surrounding.
As an example, can to the time that each surface of the silicon chip carries out rinse using the mixed solution of the hydrofluoric acid and nitric acid
Set with according to technique needs, it is preferable that in the present embodiment, using the mixed solution of the hydrofluoric acid and nitric acid to described
The time that each surface of silicon chip carries out rinse is less than or equal to 10 seconds.
As an example, not had to the equipment that each surface of the silicon chip carries out rinse using the mixed solution of the hydrofluoric acid and nitric acid
There is particular determination, can be slot-type device, or chain equipment, it is preferable that in the present embodiment, the equipment of the rinse
It is slot-type device.There are multiple rollers, the silicon chip obtained after diffusion section passes through in the way of floating in the slot-type device
The slot-type device.
It should be noted that the slot-type device in the step is independent cell body, it is necessary to independent liquid (i.e. hydrofluoric acid and
The mixed solution of nitric acid) circulatory system and liquid add-on system.
In step 2) in, the S2 steps in Fig. 2 are referred to, using deionized water to step 1) silicon chip that obtains it is each
Individual surface is rinsed.
As an example, each surface that can be to the silicon chip by the way of spray is rinsed, it would however also be possible to employ the side of rinse
Formula is rinsed to each surface of the silicon chip.
As an example, using deionized water to step 1) time for being rinsed of each surface of the silicon chip for obtaining can be with root
Need to be set according to actual process, it is preferable that in the present embodiment, using deionized water to step 1) silicon chip that obtains
Time for being rinsed of each surface can be but be not limited only to 1 minute~3 minutes.
As an example, using deionized water to step 1) equipment that is rinsed of each surface of the silicon chip for obtaining is without spy
It is different to limit, can be slot-type device, or chain equipment.The step is act as step 1) in silicon chip table after rinse
The mixed solution removal of the hydrofluoric acid and nitric acid of face residual.
In step 3) in, the S3 steps in Fig. 2 being referred to, by step 2) silicon chip that obtains carries out dry tack free.
As an example, dry tack free can be carried out to the silicon chip by the way of drying, also can be by the way of drying to described
Silicon chip carries out dry tack free.The dry degree is preferably no washmarking.
In step 4) in, the S4 steps in Fig. 2 are referred to, using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid to step 3)
The side and the back side of the silicon chip for obtaining perform etching.
As an example, using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid to step 3) side of silicon chip that obtains and the back side enters
Row etching is consistent with existing silicon chip wet etching method, can be carried out according to method well known to those skilled in the art, herein no longer
It is tired to state.The step act as removing the silicon chip side and the doped silicon at the back side is performed etching, with remove the silicon chip side and
The extension layer at the back side, so as to prevent the generation of solar cell drain conditions.
In step 4) after, also including using deionized water to step 4) each surface of the silicon chip for obtaining is rinsed,
And the step of carry out dry tack free to the silicon chip.
As an example, each surface that can be to the silicon chip by the way of spray is rinsed, it would however also be possible to employ the side of rinse
Formula is rinsed to each surface of the silicon chip.Using deionized water to step 4) each surface of the silicon chip for obtaining enters
The time that row is rinsed can need to be set according to actual process, it is preferable that in the present embodiment, using deionized water to step
4) time that each surface for the silicon chip for obtaining is rinsed can be but be not limited only to 1 minute~3 minutes.Using go from
Sub- water is to step 4) equipment that is rinsed of each surface of the silicon chip for obtaining is not particularly limited, and can be slot-type device,
It can also be chain equipment.The step is act as step 4) in the hydrofluoric acid of silicon chip surface residual after wet etching,
The mixed solution removal of nitric acid and sulfuric acid.
As an example, dry tack free can be carried out to the silicon chip by the way of drying, also can be by the way of drying to described
Silicon chip carries out dry tack free.The dry degree is preferably no washmarking.
The wet etching method of silicon chip of the invention first by hydrofluoric acid and nitric acid mixed solution to the silicon that is obtained after diffusion section
Each surface of piece carries out rinse, and the mixed solution for then reusing hydrofluoric acid, nitric acid and sulfuric acid carries out wet etching to silicon chip,
First each surface of the silicon chip using the mixed solution of hydrofluoric acid and nitric acid to being obtained after diffusion section carries out rinse, hydrophilic phosphorus
Silicon or Pyrex can rapidly be etched away in the mixed solution of the hydrofluoric acid of rich HF and nitric acid so that the surrounding of silicon chip is presented
Repellency, when reusing the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid and carrying out wet etching to silicon chip, mixed solution is difficult to go out again
Existing " climbing liquid " phenomenon, more will not will not form etching trace, so as to improve silicon chip in silicon chip edge porous silicon in silicon chip surrounding
Yield and efficiency.
Embodiment two
Fig. 3 is referred to, the present invention provides a kind of production method of solar cell, and the production method of the solar cell includes
Following steps：
1) provide detection qualified silicon chip；
2) surface wool manufacturing is carried out to the silicon chip；
3) system knot is diffused in the silicon chip after surface wool manufacturing；
4) using the wet etching method of silicon chip as described in either a program in embodiment one to step 3) silicon chip that obtains enters
Row wet etching；
5) in step 4) the front side of silicon wafer coated with antireflection film that obtains；
6) electrode is made at the back side of the front of the silicon chip and the silicon chip；
7) by step 6) silicon chip that obtains is sintered.
In step 1) in, refer to the S1 steps in Fig. 3, there is provided the qualified silicon chip of detection.
As an example, in the production method of the solar cell, it is necessary to provide silicon chip detect, to the silicon chip
Detection is carried out including the surface smoothness to the silicon chip, minority carrier life time, resistivity, P/N types and technical parameter enters etc. micro-crack
Row detection, and classified accordingly or selected, obtain surfacing, the qualified silicon chip without micro-crack.
In step 2) in, the S2 steps in Fig. 3 are referred to, surface wool manufacturing is carried out to the silicon chip.
As an example, before surface wool manufacturing is carried out to the silicon chip, also including being cleaned to the silicon chip surface the step of,
It is used to remove the defect of the silicon chip surface, for example, the silicon chip surface exists by scroll saw surface irregularity, surface to be seen not
Impurity formed in the grease or growth crystallization process that go out etc..
As an example, it is possible to use but the surface that aqueous slkali (for example KOH solution) corrodes the silicon chip is not limited only to, formed
The matte of class " pyramid " shape, the side that making has matte is the front surface of the silicon chip.Surface wool manufacturing is carried out to the silicon chip
Effect be the mechanical damage layer and oxide layer for removing the silicon chip surface, formed matte, the silicon chip surface formed effectively increasing
Strong absorption of the silicon chip to incident sunshine, so as to increase the absorption of light, improves the short circuit current and conversion efficiency of battery.
In step 3) in, the S3 steps in Fig. 3 are referred to, system knot is diffused in the silicon chip after surface wool manufacturing.
As an example, knot process processed is diffused in the silicon chip after surface wool manufacturing can be ripe according to those skilled in the art institute
The method known is carried out, and it act as forming PN junction so that electronics and hole do not return to original place after flowing, so as to form electricity
Stream.
In step 4) in, the S4 steps in Fig. 3 are referred to, using the wet method of the silicon chip as described in either a program in embodiment one
Lithographic method is to step 3) silicon chip that obtains carries out wet etching.
As an example, to step 3) silicon chip that obtains carries out the method detailed in Example one of wet etching, no longer tires out herein
State.
In step 5) in, the S5 steps in Fig. 3 are referred to, in step 4) the front side of silicon wafer coated with antireflection film that obtains.
As an example, can be using chemical vapour deposition technique or physical vaporous deposition in the front side of silicon wafer coated with antireflection film, institute
Stating antireflective coating can be but be not limited only to SiN.In step 4) the front side of silicon wafer coated with antireflection film that obtains act as to electricity
Pond is passivated, and passivation can remove the dangling bonds of battery surface and reduce surface state, so as to reduce surface recombination loss, improve
The photoelectric transformation efficiency of solar cell.
In step 6) in, the S6 steps in Fig. 3 are referred to, make electrode at the back side of the front of the silicon chip and the silicon chip.
As an example, can be using the technique of existing any one making electrode in the front of the silicon chip and the back side system of the silicon chip
Make the electrode, it is preferable that in the present embodiment, using silk-screen printing technique at the front of the silicon chip and the back side of the silicon chip
Make the electrode.
As an example, the electrode can be but be not limited only to aluminium electrode.In the front of the silicon chip and the back side system of the silicon chip
The purpose for making the electrode is that the electric current that will be produced under illumination is derived.
In step 7) in, the S7 steps in Fig. 3 being referred to, by step 6) silicon chip that obtains is sintered.
As an example, being well known to those skilled in the art to the technique that the silicon chip is sintered, it is not repeated herein.Will step
The electrode at the back side for acting as making the front for being produced on the silicon chip and the silicon chip that the rapid silicon chip for 6) obtaining is sintered
Form good Ohmic contact with silicon chip, so as to improve open-circuit voltage and short circuit current, and make it have firm adhesive force with it is good
Good solderability.
In sum, the present invention provides a kind of wet etching method of silicon chip and the production method of solar cell, the silicon chip
Wet etching method is comprised the following steps：1) using the mixed solution of hydrofluoric acid and nitric acid to each of the silicon chip that is obtained after diffusion section
Individual surface carries out rinse；2) using deionized water to step 1) each surface of the silicon chip for obtaining is rinsed；3) will
Step 2) silicon chip that obtains carries out dry tack free；4) using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid to step 3) obtain
Silicon chip side and the back side perform etching.Mixing of the wet etching method of silicon chip of the invention first by hydrofluoric acid and nitric acid
Each surface of silicon chip of the solution to being obtained after diffusion section carries out rinse, then reuses the mixing of hydrofluoric acid, nitric acid and sulfuric acid
Solution carries out wet etching to silicon chip, first using hydrofluoric acid and nitric acid mixed solution to the silicon chip that is obtained after diffusion section each
Surface carries out rinse, and hydrophilic phosphorus silicon or Pyrex can rapidly be carved in the mixed solution of the hydrofluoric acid of rich HF and nitric acid
Eating away so that the surrounding of silicon chip is presented repellency, the mixed solution for reusing hydrofluoric acid, nitric acid and sulfuric acid carries out wet method to silicon chip
During etching, mixed solution is difficult occur " climbing liquid " phenomenon again, will not be in silicon chip edge porous silicon, more will not be in silicon chip surrounding shape
Into etching trace, so as to improve the yield and efficiency of silicon chip.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any to be familiar with this skill
The personage of art all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Therefore, such as
Those of ordinary skill in the art completed under without departing from disclosed spirit and technological thought all etc.
Effect modifications and changes, should be covered by claim of the invention.
Claims (10)
1. a kind of wet etching method of silicon chip, it is characterised in that comprise the following steps：
1) each surface of the silicon chip using the mixed solution of hydrofluoric acid and nitric acid to being obtained after diffusion section carries out rinse；
2) using deionized water to step 1) each surface of the silicon chip for obtaining is rinsed；
3) by step 2) silicon chip that obtains carries out dry tack free；
4) using the mixed solution of hydrofluoric acid, nitric acid and sulfuric acid to step 3) side of the silicon chip that obtains and the back side enters
Row etching.
2. the wet etching method of silicon chip according to claim 1, it is characterised in that：Step 1) in, the hydrofluoric acid and nitre
Hydrofluoric acid and the mass concentration percentage of nitric acid are 5 in the mixed solution of acid:1~10:1.
3. the wet etching method of silicon chip according to claim 1, it is characterised in that：Step 1) in, set in independent slot type
Each surface of the silicon chip in standby to being obtained after diffusion section carries out rinse, has multiple rollers in the slot-type device,
The silicon chip obtained after diffusion section passes through the slot-type device in the way of floating.
4. the wet etching method of the silicon chip according to right wants 1, it is characterised in that：Step 1) in, time of rinse be less than or
Equal to 10 seconds.
5. the wet etching method of silicon chip according to claim 1, it is characterised in that：Step 4) after, also including using going
Ionized water is to step 4) each surface of the silicon chip for obtaining is rinsed, and the step of dry tack free is carried out to the silicon chip
Suddenly.
6. the wet etching method of the silicon chip according to claim 1 or 5, it is characterised in that：By the way of spray or rinse
Each surface to the silicon chip is rinsed.
7. the wet etching method of silicon chip according to claim 1 or 5, it is characterised in that：Using drying or dry by the way of pair
The silicon chip surface is dried.
8. the wet etching method of silicon chip according to claim 1 or 5, it is characterised in that：In chain equipment or slot-type device
Each surface to the silicon chip is rinsed.
9. a kind of production method of solar cell, it is characterised in that the production method of the solar cell is comprised the following steps：
1) provide detection qualified silicon chip；
2) surface wool manufacturing is carried out to the silicon chip；
3) system knot is diffused in the silicon chip after surface wool manufacturing；
4) using the wet etching method of silicon chip as any one of claim 1 to 8 to step 3) institute that obtains
Stating silicon chip carries out wet etching；
5) in step 4) the front side of silicon wafer coated with antireflection film that obtains；
6) electrode is made at the back side of the front of the silicon chip and the silicon chip；
7) by step 6) silicon chip that obtains is sintered.
10. the production method of solar cell according to claim 9, it is characterised in that：In step 1) and step 2)
Between, also including being cleaned to the silicon chip surface the step of.
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| CN109378364A (en) * | 2018-12-03 | 2019-02-22 | 江苏中宇光伏科技有限公司 | The etching trimming technique of silicon wafer in a kind of production of solar battery sheet |
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