CN106783491A - A kind of ion implantation device and its application method - Google Patents
A kind of ion implantation device and its application method Download PDFInfo
- Publication number
- CN106783491A CN106783491A CN201611208453.9A CN201611208453A CN106783491A CN 106783491 A CN106783491 A CN 106783491A CN 201611208453 A CN201611208453 A CN 201611208453A CN 106783491 A CN106783491 A CN 106783491A
- Authority
- CN
- China
- Prior art keywords
- ion
- ion beam
- pfg
- power supply
- neutralization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 43
- 238000000605 extraction Methods 0.000 claims abstract description 29
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 29
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 19
- 230000005611 electricity Effects 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of ion implantation device, include ion gun, magnetic field successively, neutralize ion beam path and processing chamber housing, also include PFG systems, described PFG systems are arranged on neutralization ion beam path, described PFG systems include neutralizing ion implanter and neutralize Ion Extraction portion, described neutralization Ion Extraction portion parcel neutralizes ion beam path, described neutralization Ion Extraction portion is provided with multiple extraction power supplys, described extraction power supply exports extraction voltage to independent, so that ion of the neutralization ion of PFG systems with magnetic field out is neutralized.The present invention draws power supply using multiple, so as to control the uniformity of the PFG systems electronics curtain of rain out.
Description
Technical field
The present invention relates to field ion implantation, more particularly, to a kind of ion implantation device and its application method.
Background technology
Ion implantation apparatus is the key equipment in operation before IC manufacturing, and ion implanting is near semiconductor surface
The technology that region is doped, carrier concentration and conduction type the purpose is to change semiconductor.Ion implanting and conventional heat
Doping process overcomes compared to that can be accurately controlled to aspects such as implantation dosage, implant angle, injection depth, horizontal proliferation
The limitation of common process, improves integrated level, opening speed, yield rate and the life-span of circuit, reduces cost and power consumption.From
Sub- implanter is widely used in doping process, can meet the requirement such as shallow junction, low temperature and precise control, it has also become IC manufacturing
Essential critical equipment in technique.
Electrostatic is wherein provided with ion implantation apparatus to neutralize and line control device（Abbreviation PFG）Ion is neutralized,
But PFG can not uniformly be distributed neutralization ion beam, so as to shine into influence to last ion implanting effect.
The content of the invention
Present invention aims to PFG systems neutralization ion beam distribution it is more uniform and controllable.
A kind of ion implantation device, successively including ion gun, magnetic field, neutralization ion beam path and processing chamber housing, its feature
Be that, also including PFG systems, described PFG systems are arranged on neutralization ion beam path, described PFG systems include neutralizing from
Sub- injector and neutralize Ion Extraction portion, described neutralization Ion Extraction portion parcel neutralizes ion beam path, described neutralization from
Sub- lead division is provided with multiple extraction power supplys, and described extraction power supply exports extraction voltage to independent, so that PFG systems
Ion of the neutralization ion with magnetic field out neutralized.
The quantity of described extraction power supply is 10 ~ 40.
The quantity of described extraction power supply is 11 or 33.
The quantity of described extraction power supply is 33, and is arranged by stereoscopic matrix.
3 rows being arranged with along the direction for neutralizing ion beam path and drawing power supply, each row draws power supply and neutralizing ion beam
On the tangent plane of passage, power supplys are drawn around being arranged with 11, and be used to place the neutralization ion of PFG systems with a vacancy
Injector.
A kind of application method of above-mentioned ion implantation device, is first turned on PFG systems, and power supply is drawn by adjusting each
So that neutralizing ion beam becomes uniform, then it is then turned on ion gun, magnetic field and neutralizes ion beam path, then observe neutralization ion
Beam, adjusts each and draws power supply again according to the deviation for neutralizing ion beam, so that neutralizing ion beam reaches final stabilization
State.Can also open ion gun, magnetic field and in, ion beam path and PFG systems, adjusted again according to the deviation for neutralizing ion beam
Whole each draws power supply, so that neutralizing ion beam reaches final stable state.
Compared with prior art, the invention has the advantages that：
1. the present invention is equal so as to improve ion implanting using the electronics curtain of rain homogeneity that multiple independent extraction power supplys improve PFG
The ion implantation apparatus and method of operation of one property.
2. the present invention can meet the demand of most of ion implantation apparatus by the rational design for drawing power supply.
Brief description of the drawings
Fig. 1 is schematic side view of the invention.
Fig. 2 is schematic top plan view of the invention.
Wherein, 1 is neutralization Ion Extraction portion, and 2 is PFG systems, and 3 to neutralize ion beam path, and 4 is neutralization ion implanting
Device.
Specific embodiment
Presently preferred embodiments of the present invention is described in detail below in conjunction with the accompanying drawings so that advantages and features of the invention be more easy to by
It will be appreciated by those skilled in the art that so as to make apparent defining to protection scope of the present invention.
A kind of ion implantation device, successively including ion gun, magnetic field, neutralization ion beam path and processing chamber housing, its feature
It is that also including PFG systems, PFG systems are arranged on neutralization ion beam path, and PFG systems include neutralizing ion implanter with
With Ion Extraction portion, neutralize Ion Extraction portion parcel and neutralize ion beam path, neutralization Ion Extraction portion is provided with multiple and draws electricity
Source, draws power supply to individually output extraction voltage, so that ion of the neutralization ion of PFG systems with magnetic field out is carried out
Neutralize.
Be first turned on PFG systems, by adjust each draw power supply so that neutralize electron beam become uniform, be then then turned on
Ion gun, magnetic field and neutralization ion beam path, then neutralization ion beam is observed, each is adjusted according to the deviation for neutralizing ion beam again
Power supply is drawn, so that neutralizing ion beam reaches final stable state.
Claims (8)
1. a kind of ion implantation device, successively including ion gun, magnetic field, neutralize ion beam path and processing chamber housing, its feature exists
In also including PFG systems, described PFG systems are arranged on neutralization ion beam path, and described PFG systems include neutralizing ion
Injector and neutralization Ion Extraction portion, described neutralization Ion Extraction portion parcel neutralize ion beam path, described neutralization ion
Lead division is provided with multiple extraction power supplys, and described extraction power supply exports extraction voltage to independent, so that PFG systems
Ion of the ion with magnetic field out is neutralized to be neutralized.
2. ion implantation device according to claim 1, it is characterised in that the quantity of described extraction power supply is 10 ~ 40
It is individual.
3. ion implantation device according to claim 1, it is characterised in that the quantity of described extraction power supply for 11 or
33.
4. ion implantation device according to claim 3, it is characterised in that the quantity of described extraction power supply is 33,
And arranged by stereoscopic matrix.
5. ion implantation device according to claim 3, it is characterised in that arranged along the direction for neutralizing ion beam path
There are 3 rows to draw power supply, each row draws power supply on the tangent plane for neutralizing ion beam path, electricity is drawn around being arranged with 11
Source, and it is used to place the neutralization ion implanter of PFG systems with a vacancy.
6. the application method of any described ion implantation devices of a kind of claim 1-5, it is characterised in that be first turned on PFG
System, by adjust each draw power supply so that neutralize electron beam become uniform, be then then turned on ion gun, magnetic field and neutralize from
Beamlet passage, then neutralization ion beam is observed, adjusting each again according to the deviation for neutralizing ion beam draws power supply and filament, so that
So that neutralizing ion beam reaches final stable state.
7. the application method of any described ion implantation devices of a kind of claim 1-5, it is characterised in that first turn on ion
Source, magnetic field and ion beam path is neutralized, power supply is drawn so that ion beam becomes uniform by adjusting each, PFG is then opened again
System, then neutralization ion beam is observed, adjusting each again according to the deviation for neutralizing ion beam draws power supply and filament, so that
Neutralize ion beam and reach final stable state.
8. the application method of any described ion implantation devices of a kind of claim 1-5, it is characterised in that open ion gun,
Magnetic field and neutralization ion beam path and PFG systems, the extraction electrode system of ion beam is adjusted according to the deviation for neutralizing ion beam again
System and PFG each draw power supply so that neutralize ion beam reach final stable state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611208453.9A CN106783491A (en) | 2016-12-23 | 2016-12-23 | A kind of ion implantation device and its application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611208453.9A CN106783491A (en) | 2016-12-23 | 2016-12-23 | A kind of ion implantation device and its application method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783491A true CN106783491A (en) | 2017-05-31 |
Family
ID=58920008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611208453.9A Pending CN106783491A (en) | 2016-12-23 | 2016-12-23 | A kind of ion implantation device and its application method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783491A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1125896A (en) * | 1994-07-01 | 1996-07-03 | 易通公司 | Ion beam electron neutralizer |
| CN1241022A (en) * | 1998-06-19 | 2000-01-12 | 易通公司 | Method and apparatus for monitoring charge neutralization operation |
| US6359286B1 (en) * | 1998-07-10 | 2002-03-19 | Applied Materials, Inc. | Method and apparatus for neutralizing space charge in an ion beam |
| US20060097185A1 (en) * | 2004-10-25 | 2006-05-11 | Epion Corporation | Ionizer and method for gas-cluster ion-beam formation |
| CN103137407A (en) * | 2011-11-25 | 2013-06-05 | 北京中科信电子装备有限公司 | Multi-electrode beam focus regulating device |
| CN104903967A (en) * | 2012-09-04 | 2015-09-09 | Tri阿尔法能源公司 | Negative ion-based neutral beam injector |
-
2016
- 2016-12-23 CN CN201611208453.9A patent/CN106783491A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1125896A (en) * | 1994-07-01 | 1996-07-03 | 易通公司 | Ion beam electron neutralizer |
| CN1241022A (en) * | 1998-06-19 | 2000-01-12 | 易通公司 | Method and apparatus for monitoring charge neutralization operation |
| US6359286B1 (en) * | 1998-07-10 | 2002-03-19 | Applied Materials, Inc. | Method and apparatus for neutralizing space charge in an ion beam |
| US20060097185A1 (en) * | 2004-10-25 | 2006-05-11 | Epion Corporation | Ionizer and method for gas-cluster ion-beam formation |
| CN103137407A (en) * | 2011-11-25 | 2013-06-05 | 北京中科信电子装备有限公司 | Multi-electrode beam focus regulating device |
| CN104903967A (en) * | 2012-09-04 | 2015-09-09 | Tri阿尔法能源公司 | Negative ion-based neutral beam injector |
Non-Patent Citations (1)
| Title |
|---|
| 李惠军: "《集成电路制造技术教程》", 30 September 2014, 清华大学出版社 * |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |