CN106783007A - It is a kind of reversely to close valve circuit - Google Patents
It is a kind of reversely to close valve circuit Download PDFInfo
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- CN106783007A CN106783007A CN201611069171.5A CN201611069171A CN106783007A CN 106783007 A CN106783007 A CN 106783007A CN 201611069171 A CN201611069171 A CN 201611069171A CN 106783007 A CN106783007 A CN 106783007A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0675—Electromagnet aspects, e.g. electric supply therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/18—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings
- H01F2007/1888—Circuit arrangements for obtaining desired operating characteristics, e.g. for slow operation, for sequential energisation of windings, for high-speed energisation of windings using pulse width modulation
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
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Abstract
The present invention provides a kind of reversely pass valve circuit, including booster circuit, master controller MCU, metal-oxide-semiconductor circuit and control circuit；Wherein, the first input end of the booster circuit is connected with first output end of the MCU, second input of the booster circuit is connected with second output end of the MCU, the output end of the booster circuit is connected with the first input end of the metal-oxide-semiconductor circuit, the metal-oxide-semiconductor circuit has is used for the first output end being connected with the positive pole of magnetic valve and the second output end being connected for the negative pole with magnetic valve, second input of the metal-oxide-semiconductor circuit is connected with the output end of the control circuit, and the input of the control circuit is connected with the 3rd output end of the MCU.The reverse pass valve circuit can realize that moment closes valve, be applicable not only in the environment of magnetic valve or pulse valve normal work, it is also possible to realize that moment closes valve when MCU deadlocks, burst power-off.
Description
Technical field
The present invention relates to home wiring control technical field, more particularly to a kind of reversely pass valve circuit.
Background technology
The use of DC electromagnetic valve is very universal in life now, for example, in families such as gas heater, gas-cookers
The gas valve used in electricity, belongs to DC electromagnetic valve.After this magnetic valve is all to provide DC voltage, in electromagnetic valve coil
Electric current sets up magnetic field, opens metal valve body；When the DC voltage for providing is disconnected, the electric current in electromagnetic valve coil gradually subtracts
Small, valve body is closed.
All it is that a shutdown signal, control power supply and electricity are exported by master controller MCU during general closing DC electromagnetic valve
Magnet valve disconnects.Because magnetic valve is inductive load, after deenergization, the electric current in electromagnetic valve coil will not at once be reduced to 0, but
Continue to be flowed by former direction by the fly-wheel diode for being connected in parallel on magnetic valve two ends, it is slow to reduce.When this current reduction is to necessarily
During degree, the magnetic force produced by magnetic field that this electric current is set up is not enough to be contended with the elastic force being connected produced by the spring of valve body,
Valve body is kept in the center, closed electromagnetic valve.
It is this control mode that magnetic valve is closed naturally is mainly had the disadvantage that by deenergization：On the one hand, it is this
The speed ratio for closing valve is slower, limits its applicability, unavailable in the environment that some require moment pass valve；On the other hand,
When the external world produces interference, for example, interference causes that MCU crashes, then uncontrollable closed electromagnetic valve is easily caused, influence is used.
The content of the invention
Present invention seek to address that problem as described above.It is an object of the present invention to provide in one kind solution problem above
It is any one reverse pass valve circuit.Specifically, the present invention provides the reverse pass valve circuit that can close magnetic valve moment.
In order to solve the above technical problems, reversely closing valve circuit the invention provides a kind of, the reverse pass valve circuit includes
Booster circuit, master controller MCU, metal-oxide-semiconductor circuit and control circuit；Wherein, the first input end of the booster circuit with it is described
The first output end connection of MCU, the second input of the booster circuit is connected with second output end of the MCU, the liter
The output end of volt circuit is connected with the first input end of the metal-oxide-semiconductor circuit, and the metal-oxide-semiconductor circuit has to be used for and magnetic valve
First output end of positive pole connection and the second output end being connected for the negative pole with magnetic valve, the second of the metal-oxide-semiconductor circuit
Input is connected with the output end of the control circuit, and input and the 3rd output end of the MCU of the control circuit connect
Connect；
The metal-oxide-semiconductor circuit includes the second electrochemical capacitor and metal-oxide-semiconductor, and the negative pole of second electrochemical capacitor is used as described
First output end of metal-oxide-semiconductor circuit；The positive pole of second electrochemical capacitor is connected with the drain electrode of the metal-oxide-semiconductor, and as described
The first input end of metal-oxide-semiconductor circuit；The source electrode of the metal-oxide-semiconductor as the metal-oxide-semiconductor circuit the second output end；
It is that the booster circuit and the control circuit provide input signal that the MCU is used for, and the booster circuit is used for
It is that second electrochemical capacitor charges to output it after terminal voltage is raised, and the control circuit is used to control leading for the metal-oxide-semiconductor
Logical and closing, second electrochemical capacitor is used to discharge to close magnetic valve when the metal-oxide-semiconductor is turned on.
Wherein, the booster circuit includes the first triode, the second triode, current-limiting resistance, first resistor, the second electricity
Resistance, the first electrochemical capacitor, the first diode and the second diode；Wherein, the positive pole of the first end of the current-limiting resistance and power supply
Connection, the second end of the current-limiting resistance is connected with the emitter stage of the first triode, and the first end of the first resistor is used as institute
The first input end of booster circuit is stated, the second end of the first resistor is connected with the base stage of first triode；Described
The positive pole of one diode is connected with the second end of the current-limiting resistance, and the negative pole of first diode and the described first electrolysis are electric
The positive pole connection of appearance, the negative pole of first electrochemical capacitor is connected with the colelctor electrode of first triode；
The first end of the second resistance R2 as the booster circuit the second input, the second of the second resistance
End is connected with the base stage of second triode, and the colelctor electrode of second triode connects with the negative pole of first electrochemical capacitor
Connect, the grounded emitter of second triode；The positive pole of second diode connects with the positive pole of first electrochemical capacitor
Connect, the negative pole of second diode is used as the output end of the booster circuit.
Wherein, the booster circuit also includes the first electric capacity and the second electric capacity, first electric capacity and the first resistor
Parallel connection, second electric capacity is in parallel with the second resistance.
Wherein, the metal-oxide-semiconductor circuit also includes the 3rd electrochemical capacitor, the 3rd triode and 3rd resistor；Wherein, described
The positive pole of two electrochemical capacitors is connected with the positive pole of the 3rd diode, and the negative pole of the 3rd diode and the described 3rd is electrolysed
The positive pole connection of electric capacity, the negative pole ground connection of the 3rd electrochemical capacitor；
The positive pole of the 3rd electrochemical capacitor is connected with the first end of the 3rd resistor, the second end of the 3rd resistor
Grid with the metal-oxide-semiconductor is connected, and as the second input of the metal-oxide-semiconductor circuit.
Wherein, the metal-oxide-semiconductor is N-channel MOS pipe.
Wherein, the control circuit includes the 4th resistance, the 3rd triode, the 5th resistance, the 6th resistance and block isolating circuit；
Wherein, the input of the block isolating circuit as it is described control circuit input use, the output end of the block isolating circuit with
The first end connection of the 5th resistance, the second end of the 5th resistance is connected with the base stage of the 3rd triode；It is described
The colelctor electrode of the 3rd triode is connected with the first end of the 4th resistance, and the second end of the 4th resistance is used as the control
The output end of circuit, the grounded emitter of the 3rd triode；The first end of the 6th resistance and the 3rd triode
Base stage connection, the second end of the 6th resistance is connected with the emitter stage of the 3rd triode.
Wherein, the block isolating circuit includes the 3rd electric capacity, the 4th diode, the 4th electrochemical capacitor, the 5th diode and the
Seven resistance；Wherein, the first end of the 3rd electric capacity as the block isolating circuit input, the second end of the 3rd electric capacity
Positive pole with the 4th diode is connected, the negative pole of the 4th diode as the block isolating circuit output end；It is described
The positive pole of the 4th electrochemical capacitor is connected with the negative pole of the 4th diode, the negative pole ground connection of the 4th electrochemical capacitor；It is described
The plus earth of the 5th diode, the negative pole of the 5th diode is connected with the first end of the 7th resistance, and the described 7th
Second end of resistance is connected with the second end of the 3rd electric capacity.
Wherein, first output end of the MCU exports the first square-wave signal, the second output end output second of the MCU
Square-wave signal, first square-wave signal is identical from the second square wave signal frequency, dutycycle is different.
Wherein, first square-wave signal and the dutycycle sum of second square-wave signal are 1.
Wherein, the 3rd output end output of the MCU is pulse width modulation (PWM) signal.
The reverse pass valve circuit that the present invention is provided can realize that moment closes valve, be applicable not only to magnetic valve or pulse valve just
Often in the environment of work, it is also possible to realize that moment closes valve when MCU deadlocks, burst power-off.The reverse pass valve circuit can
It is high by property, it is adaptable to safety requirements working environment higher, such as gas heater, gas-cooker etc..
The following description for exemplary embodiment is read with reference to the drawings, other property features of the invention and advantage will
It is apparent from.
Brief description of the drawings
The accompanying drawing for being incorporated into specification and constituting a part for specification shows embodiments of the invention, and with
Description is used to explain principle of the invention together.In the drawings, similar reference is used to represent similar key element.Under
Accompanying drawing in the description of face is some embodiments of the present invention, rather than whole embodiments.Come for those of ordinary skill in the art
Say, on the premise of not paying creative work, other accompanying drawings can be obtained according to these accompanying drawings.
Fig. 1 schematically illustrates the reverse schematic diagram for closing valve circuit of the invention；
Fig. 2 schematically illustrates first output end of MCU and the signal output waveform figure of the second output end.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.Need
Illustrate, in the case where not conflicting, the feature in embodiment and embodiment in the application can mutually be combined.
The present invention proposes a kind of control program of the reverse closing on DC electromagnetic valve and pulse valve, it is possible to achieve
The moment of power-off is by valve closing.The control circuit constituted using triode and metal-oxide-semiconductor, triode is controlled by pwm signal
The discharge and recharge of electrochemical capacitor is realized in conducting with cut-off, so control metal-oxide-semiconductor conducting whether.When metal-oxide-semiconductor cannot be turned on, electricity
Magnet valve normal work；And when metal-oxide-semiconductor is turned on, magnetic valve two ends are realized with reversely pressurization, result from the original electric current side of magnetic valve
To opposite electric current so that the magnetic field in magnetic valve cancels each other, and then causes closed electromagnetic valve.
Below in conjunction with the accompanying drawings, to being described in detail according to reverse pass valve circuit provided by the present invention.
Fig. 1 shows a kind of structural representation of the reverse embodiment for closing valve circuit of the invention, shown in reference picture 1, should
Reversely closing valve circuit includes booster circuit 1, master controller MCU2, metal-oxide-semiconductor circuit 3 and control circuit 4.Wherein, booster circuit 1 will
Its output end voltage is delivered to metal-oxide-semiconductor circuit 3 after raising, and is that the electrochemical capacitor in metal-oxide-semiconductor circuit 3 charges, to treat needing at any time
When closing magnetic valve 5, backward voltage is conveyed to the two ends of magnetic valve 5 by metal-oxide-semiconductor, offset the magnetic field in magnetic valve 5 with reality
It is now instantaneous to close magnetic valve 5；Control circuit 4 is then used to control to make the metal-oxide-semiconductor in metal-oxide-semiconductor circuit 3 begin in normal operation
Remain off eventually, and the control metal-oxide-semiconductor conducting at power-off (including situations such as artificial closing, accident power-off)；Master controller
MCU2 then provides the electric signal required for realizing corresponding function for booster circuit 1 and control circuit 4.
Specifically, the first input end of booster circuit 1 is connected with the first output end OUT1 of MCU2, and the of booster circuit 1
Two inputs are connected with the second output end OUT2 of MCU2, and the output signal of two the output ends OUT1 and OUT2 of MCU2 is made respectively
It is the two-way input signal of booster circuit 1, controls the output voltage change of booster circuit 1.
The output end of booster circuit 1 is connected with the first input end of metal-oxide-semiconductor circuit 3, after booster circuit 1 receives input signal
It is delivered in metal-oxide-semiconductor circuit 3 after the voltage rising for outputting it end, is that its electrochemical capacitor charges.
Metal-oxide-semiconductor circuit 3 is with the first output end for being connected with the positive pole of magnetic valve 5 and for negative with magnetic valve 5
Second output end of pole connection, i.e. two output ends of metal-oxide-semiconductor circuit 3 are used as the reverse output end for closing valve circuit of the invention
Use, the both positive and negative polarity with the magnetic valve 5 for needing control is connected.
Second input of metal-oxide-semiconductor circuit 3 is connected with the output end of control circuit 4, controls the input and MCU2 of circuit 4
The 3rd output end OUT3 connection.The output signal of the 3rd output end OUT3 of MCU2 is controlled as the input signal of control circuit 4
Metal-oxide-semiconductor in the major control metal-oxide-semiconductor circuit 3 of circuit processed 4 is turned on and off, and then controls the closing of magnetic valve 5.
Specifically, metal-oxide-semiconductor circuit 3 includes the second electrochemical capacitor E2 and metal-oxide-semiconductor M1.Wherein, the second electrochemical capacitor E2's is negative
Pole uses as the first output end of metal-oxide-semiconductor circuit 3, reverse the first output end for closing valve circuit as of the invention, in reality
The positive pole of magnetic valve 5 is connected when using；The positive pole of the second electrochemical capacitor E2 is connected with the drain electrode of metal-oxide-semiconductor M1, and as metal-oxide-semiconductor electricity
The first input end on road 3 is used, that is, be used to the output end of even connection control circuit 3；The source electrode of metal-oxide-semiconductor M1 is used as metal-oxide-semiconductor circuit 3
Second output end is used, reverse the second output end for closing valve circuit as of the invention, and magnetic valve 5 is connected when actually used
Negative pole.In reverse pass valve circuit of the invention, MCU2 is mainly used in being booster circuit 1 and control circuit 4 as master controller
Input signal is provided.Wherein, for outputting it after the voltage at end is raised as second is electric after the signal of the reception of booster circuit 1 MCU2
Solution electric capacity E2 charges；For controlling being turned on and off for metal-oxide-semiconductor M1 after the signal of the control reception of circuit 4 MCU2, and second is electrolysed
Electric capacity E2 is then used to be discharged when metal-oxide-semiconductor M1 is turned on, reversely to close magnetic valve.
Specifically, booster circuit 1 include the first triode P1, the second triode N2, current-limiting resistance R0, first resistor R1,
Second resistance R2, the first electrochemical capacitor E1, the first diode D1 and the second diode D2.
Wherein, current-limiting resistance R0 is used as the positive pole of the charging current limiter resistance of the first electrochemical capacitor E1, its first end and power supply
Connection, second end of current-limiting resistance R0 is connected with the emitter stage of the first triode P1；The first end of first resistor R1 is used as boosting
The first input end of circuit 1, second end of first resistor R1 is connected with the base stage of the first triode P1, is used to drive the one or three pole
Pipe P1；The positive pole of the first diode D1 is connected with second end of current-limiting resistance R0, and the negative pole of the first diode D1 and first is electrolysed
The positive pole connection of electric capacity E1, the negative pole of the first electrochemical capacitor E1 is connected with the colelctor electrode of the first triode P1.
The first end of second resistance R2 as booster circuit 1 the second input, second end and second of second resistance R2
The base stage connection of triode N2, is used to drive the second triode N2；The colelctor electrode of the second triode N2 and the first electrochemical capacitor E1
Negative pole connection, the grounded emitter of the second triode N2.
The positive pole of the second diode D2 is connected with the positive pole of the first electrochemical capacitor E1, and the negative pole of the second diode D2 is used as liter
The output end of volt circuit 1 is used.
It is pointed out that it is PNP type triode that the first triode P1 is selected, and it is NPN type that the second triode N2 is selected
Triode.
To realize the boosting of booster circuit 1, the first output end OUT1 of MCU2 exports the first square-wave signal, MCU2's
Second output end OUT2 exports the second square-wave signal, and the first square-wave signal is identical from the second square wave signal frequency, dutycycle is different.
Fig. 2 shown in a kind of embodiment of the invention, the signal output waveform figure of the output end OUT1 and OUT2 of MCU2.
Wherein, the dutycycle sum of the first square-wave signal and the second square-wave signal is 1.Shown in reference picture 2, in the present embodiment,
, there is symmetrical dead band in the high level both sides of two square-wave signals, that is, this is symmetrical between the first square-wave signal and the second square-wave signal
There are the both sides when the first square-wave signal is low level in dead band.
When the second square-wave signal that the second output end OUT2 of MCU2 is exported is high level, first output end of MCU2
First square-wave signal of OUT1 outputs must be high level, and now, the first triode P1 cannot be turned on, and the second triode N2 is in
Conducting state.Direction of current flow now is VCC → D1 → E1 → N2 → GND, is that electrochemical capacitor E1 is once charged, and is made
Obtain E1 and store certain electric charge, so that its two ends is with the presence of certain voltage.When by after the about time of (R0 × E1) second, E1 two
The voltage at end is close to VCC.
When the first square-wave signal is low level, the second square-wave signal must be low level, and now the first triode P1 is turned on,
And the second triode N2 cannot be turned on.Under this state, electric current is without the path that can be flowed, so VCC is applied directly to first
The negative pole of electrochemical capacitor E1.And because the voltage (being set to Ve) at electrochemical capacitor two ends can not be mutated, so in the first electrochemical capacitor
When the cathode voltage of E1 is changed into VCC, it is VCC+Ve that its cathode voltage is elevated, and is approximately 2 × VCC, so that the first electrochemical capacitor
The voltage of E1 positive poles is just raised.
When the first square-wave signal and the second square-wave signal are in Dead Time, i.e. the first square-wave signal be high level,
When second square-wave signal is low level, the first triode P1 and the second triode N2 cannot be turned on.
Specifically, the booster circuit 1 can also include the first electric capacity C1 and the second electric capacity C2, wherein, the first electric capacity C1 with
First resistor R1 is in parallel, and the second electric capacity C2 is in parallel with second resistance R2.Being connected in parallel on the first electric capacity C1 at R1 two ends can realize
The conducting of one triode P1, is connected in parallel on the second electric capacity C2 at R2 two ends then for accelerating the conducting of the second triode N2.
Metal-oxide-semiconductor circuit 3 mainly controls to apply backward voltage to magnetic valve 5 by the conducting of metal-oxide-semiconductor so that electromagnetism
Valve 5 is closed.As shown in figure 1, metal-oxide-semiconductor circuit 3 also includes the 3rd electrochemical capacitor E3, the 3rd triode D3 and 3rd resistor R3.The
The positive pole of two electrochemical capacitor E2 is connected with the positive pole of the 3rd diode D3, the negative pole and the 3rd electrochemical capacitor E3 of the 3rd diode D3
Positive pole connection, the 3rd electrochemical capacitor E3 negative pole ground connection；The positive pole of the 3rd electrochemical capacitor E3 and the first end of 3rd resistor R3
Connection, second end of 3rd resistor R3 is connected with the grid of metal-oxide-semiconductor M1, and the second input as metal-oxide-semiconductor circuit 3 is used.
After the cathode voltage of 1 couple of the first electrochemical capacitor E1 of booster circuit boosts, the 2 × VCC voltages after rising
For the second electrochemical capacitor E2 and the 3rd electrochemical capacitor E3 charges, while being connected on the drain electrode of metal-oxide-semiconductor M1.Wherein, metal-oxide-semiconductor M1 is selected and is
N-channel MOS pipe.After the grid voltage of metal-oxide-semiconductor M1 is higher than source voltage certain value, metal-oxide-semiconductor M1 conductings.Second electrochemical capacitor E2
The voltage at two ends can reversely be applied to the two ends of magnetic valve 5, produced immediate current and original normal stream by metal-oxide-semiconductor M1
Through the sense of current of magnetic valve 5 conversely, making the magnetic field in magnetic valve cancel out each other, magnetic valve 5 is closed.
Because the effect above needs metal-oxide-semiconductor M1 to turn on to realize, therefore in normal operating conditions, it is necessary to metal-oxide-semiconductor
M1 is closed, in order to avoid the normal work of influence magnetic valve 5.Control the Main Function of circuit 4 to be control metal-oxide-semiconductor M1 to exist
Remained off under normal operating conditions, only in the case where power-off or no signal are input into, make metal-oxide-semiconductor M1 turn on.
Specifically, control circuit 4 include the 4th resistance R4, the 3rd triode N3, the 5th resistance R5, the 6th resistance R6 and every
Straight circuit 6.Wherein, the input of block isolating circuit 6 is used as the input of control circuit 4, and the of connection master controller MCU2
Three output end OUT3；The output end of block isolating circuit 6 is connected with the first end of the 5th resistance R5, second end of the 5th resistance R5 and the
The base stage connection of three triode N3；The colelctor electrode of the 3rd triode N3 is connected with the first end of the 4th resistance R4, the 4th resistance R4
The second end as the output end of control circuit 4, the second input of metal-oxide-semiconductor circuit 3, i.e. the 4th resistance R4 are connected when in use
The second end be connected with the grid of metal-oxide-semiconductor M1；The grounded emitter of the 3rd triode N3.Wherein, the 3rd triode N3 selects NPN
Type triode.
The first end of the 6th resistance R6 is connected with the base stage of the 3rd triode N3, second end and the three or three of the 6th resistance R6
The emitter stage connection of pole pipe N3.
It is pointed out that the 3rd output end OUT3 outputs of master controller MCU2 is pulse width modulation (PWM) signal.
The effect of block isolating circuit 6 is exactly isolated DC signal, only allows pwm signal to pass through, without allowing direct current signal to pass through, so that
In normal operation the 3rd triode N3 it is in the conduction state, and then be delivered to metal-oxide-semiconductor M1 signal be low electricity
It is flat, remain turned-off metal-oxide-semiconductor M1；Only under the abnormalities such as power-off, the no signal input of control circuit 4, and then the three or three pole
Pipe N3 cannot be turned on, and after causing metal-oxide-semiconductor M1 to turn on the two ends of magnetic valve 5 are applied with backward voltage, and the control moment of magnetic valve 5 closes.
Specifically, block isolating circuit 6 includes the 3rd electric capacity C3, the 4th diode D4, the 4th electrochemical capacitor E4, the 5th diode
D5 and the 7th resistance R7.Wherein, the first end of the 3rd electric capacity C3 as block isolating circuit 6 input, the second of the 3rd electric capacity C3
End is connected with the positive pole of the 4th diode D4, and the negative pole of the 4th diode D4 is used as the output end of block isolating circuit 6, with the 5th
The first end connection of resistance R5.
The positive pole of the 4th electrochemical capacitor E4 is connected with the negative pole of the 4th diode D4, and the negative pole of the 4th electrochemical capacitor E4 connects
Ground.The plus earth of the 5th diode D5, the negative pole of the 5th diode D5 is connected with the first end of the 7th resistance R7, the 7th resistance
Second end of R7 is connected with second end of the 3rd electric capacity C3.
In block isolating circuit 6, the 3rd electric capacity C3 plays a part of " separated by direct communication ".When pwm signal is high level, the 3rd
Electric capacity C3 can consider short circuit in a short period of time, and the flow direction of electric current is OUT3 → C3 → D4 → E4 → GND, to the 4th
Electrochemical capacitor E4 is charged.As E4 both end voltages gradually rise, voltage is also gradually formed at the 3rd electric capacity C3 two ends, it
One end for just, the second end be negative.When PWM is low level, because the voltage difference at the 3rd electric capacity C3 two ends can not be mutated, and its
One terminal voltage is changed into 0V, so that its second terminal voltage is changed into negative pressure, now the flow path of electric current is GND → D5 → R7 → C3's
Second end；And after the voltage of the 4th electrochemical capacitor E4 reaches certain value, the E4 electric discharges when PWM is low level, electric current is by the 5th
Resistance R5 reaches the base stage of N1, the 3rd triode N3 conductings.It follows that no matter pwm signal is high level or low level, the
Three triode N3 are both turned on, so as to control circuit 4 to remain low electricity by the signal that the 4th resistance R4 is exported to metal-oxide-semiconductor M1 grids
Pressure condition so that metal-oxide-semiconductor M1 is remained turned-off.
But when needing to close magnetic valve, including artificially close or fortuitous event occur, such as power-off, MCU is crashed
Deng now, the 3rd output end OUT3 of master controller MCU2 is exported without pwm signal, and the 3rd triode N3 cannot be turned on, the 3rd electricity
The cathode voltage of solution electric capacity E3 is the grid that metal-oxide-semiconductor M1 is delivered to by 3rd resistor R3 so that metal-oxide-semiconductor M1 is turned on, so that the
Two electrochemical capacitor E2 can be by metal-oxide-semiconductor M1 for the two ends of magnetic valve 5 apply backward voltage, and control magnetic valve 5 is closed.
If it is to be herein pointed out the 3rd output end OUT3 outputs of MCU2 is not pwm signal, but fixing electricity
Flat electric signal, then charge without the electrochemical capacitor E4 of decree the 4th, so that cannot be so that the 3rd triode N3 is turned on.
The reverse pass valve circuit that the present invention is provided is used not only in the environment of magnetic valve or pulse valve normal work,
And suitable for master controller deadlock, the suddenly emergency case such as power-off, and be adapted to work closing the rapid high request of response valve
Environment, such as gas heater, gas-cooker etc..
Descriptions above can combine implementation individually or in a variety of ways, and these variants all exist
Within protection scope of the present invention.
One of ordinary skill in the art will appreciate that all or part of step in the above method can be instructed by program
Related hardware is completed, and described program can be stored in computer-readable recording medium, such as read-only storage, disk or CD
Deng.Alternatively, all or part of step of above-described embodiment can also be realized using one or more integrated circuits, accordingly
Ground, each module/unit in above-described embodiment can be realized in the form of hardware, it would however also be possible to employ the shape of software function module
Formula is realized.The present invention is not restricted to the combination of the hardware and software of any particular form.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.And, term " including ", "comprising" or its any other variant be intended to
Nonexcludability is included, so that process, method, article or equipment comprising a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence " including ... ", it is not excluded that in bag
Also there is other identical element in the process, method, article or the equipment that include the key element.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations.Although
The present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used
Modified with to the technical scheme described in foregoing embodiments, or equivalent is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. it is a kind of reversely to close valve circuit, it is characterised in that the reverse pass valve circuit includes booster circuit (1), master controller MCU
(2), metal-oxide-semiconductor circuit (3) and control circuit (4)；
Wherein, the first input end of the booster circuit (1) is connected with first output end (OUT1) of the MCU (2), the liter
Second input of volt circuit (1) is connected with second output end (OUT2) of the MCU (2), the output of the booster circuit (1)
End is connected with the first input end of the metal-oxide-semiconductor circuit (3), and the metal-oxide-semiconductor circuit (3) is with for the positive pole company with magnetic valve
The first output end for connecing and the second output end being connected for the negative pole with magnetic valve, the second input of the metal-oxide-semiconductor circuit (3)
Hold and be connected with the output end of control circuit (4), the input of control circuit (4) and the 3rd of the MCU (2) export
End (OUT3) connection；
The metal-oxide-semiconductor circuit (3) includes the second electrochemical capacitor (E2) and metal-oxide-semiconductor (M1), second electrochemical capacitor (E2) it is negative
Pole as the metal-oxide-semiconductor circuit (3) the first output end；The positive pole of second electrochemical capacitor (E2) and the metal-oxide-semiconductor (M1)
Drain electrode connection, and as the first input end of the metal-oxide-semiconductor circuit (3)；The source electrode of the metal-oxide-semiconductor (M1) is used as the MOS
Second output end of pipe circuit (3)；
The MCU (2) is for being that the booster circuit (1) and control circuit (4) provide input signal, the booster circuit
(1) it is that second electrochemical capacitor (E2) is charged for outputting it after terminal voltage is raised, control circuit (4) is for controlling
Metal-oxide-semiconductor (M1's) is turned on and off, second electrochemical capacitor (E2) be used for when the metal-oxide-semiconductor (M1) is turned on electric discharge with
Close magnetic valve.
2. it is as claimed in claim 1 reversely to close valve circuit, it is characterised in that the booster circuit (1) includes the first triode
(P1), the second triode (N2), current-limiting resistance (R0), first resistor (R1), second resistance (R2), the first electrochemical capacitor (E1),
First diode (D1) and the second diode (D2)；
Wherein, the first end of the current-limiting resistance (R0) is connected with the positive pole of power supply, the second end of the current-limiting resistance (R0) with
The emitter stage connection of the first triode (P1), the first end of the first resistor (R1) is used as the first of the booster circuit (1)
Input, the second end of the first resistor (R1) is connected with the base stage of first triode (P1)；First diode
(D1) positive pole is connected with the second end of the current-limiting resistance (R0), the negative pole of first diode (D1) and described first electricity
The positive pole connection of solution electric capacity (E1), the negative pole of first electrochemical capacitor (E1) connects with the colelctor electrode of first triode (P1)
Connect；
The first end of the second resistance R2 as the booster circuit (1) the second input, the second resistance (R2)
Second end is connected with the base stage of second triode (N2), and the colelctor electrode of second triode (N2) and described first is electrolysed
The negative pole connection of electric capacity (E1), the grounded emitter of second triode (N2)；
The positive pole of second diode (D2) is connected with the positive pole of first electrochemical capacitor (E1), second diode
(D2) negative pole is used as the output end of the booster circuit (1).
3. it is as claimed in claim 2 reversely to close valve circuit, it is characterised in that the booster circuit (1) also includes the first electric capacity
(C1) and the second electric capacity (C2), first electric capacity (C1) is in parallel with the first resistor (R1), second electric capacity (C2) with
The second resistance (R2) is in parallel.
4. it is as claimed in claim 1 reversely to close valve circuit, it is characterised in that the metal-oxide-semiconductor circuit (3) also includes the 3rd electrolysis
Electric capacity (E3), the 3rd triode (D3) and 3rd resistor (R3)；
Wherein, the positive pole of second electrochemical capacitor (E2) is connected with the positive pole of the 3rd diode (D3), and the described 3rd 2
The negative pole of pole pipe (D3) is connected with the positive pole of the 3rd electrochemical capacitor (E3), and the negative pole of the 3rd electrochemical capacitor (E3) connects
Ground；
The positive pole of the 3rd electrochemical capacitor (E3) is connected with the first end of the 3rd resistor (R3), the 3rd resistor (R3)
The second end be connected with the grid of the metal-oxide-semiconductor (M1), and as the second input of the metal-oxide-semiconductor circuit (3).
5. the reverse pass valve circuit as described in claim 1 or 4, it is characterised in that the metal-oxide-semiconductor (M1) is N-channel MOS pipe.
6. it is as claimed in claim 1 reversely to close valve circuit, it is characterised in that the control circuit (4) includes the 4th resistance
(R4), the 3rd triode (N3), the 5th resistance (R5), the 6th resistance (R6) and block isolating circuit (6)；
Wherein, the input of the block isolating circuit (6) is used as the input of control circuit (4), the block isolating circuit
(6) output end is connected with the first end of the 5th resistance (R5), second end and the described 3rd of the 5th resistance (R5)
The base stage connection of triode (N3)；
The colelctor electrode of the 3rd triode (N3) is connected with the first end of the 4th resistance (R4), the 4th resistance (R4)
The second end as it is described control circuit (4) output end, the grounded emitter of the 3rd triode (N3)；
The first end of the 6th resistance (R6) is connected with the base stage of the 3rd triode (N3), the 6th resistance (R6)
Second end is connected with the emitter stage of the 3rd triode (N3).
7. it is as claimed in claim 6 reversely to close valve circuit, it is characterised in that the block isolating circuit (6) includes the 3rd electric capacity
(C3), the 4th diode (D4), the 4th electrochemical capacitor (E4), the 5th diode (D5) and the 7th resistance (R7)；
Wherein, the first end of the 3rd electric capacity (C3) as the block isolating circuit (6) input, the 3rd electric capacity (C3)
The second end be connected with the positive pole of the 4th diode (D4), the negative pole of the 4th diode (D4) is used as blocking electricity
The output end on road (6)；
The positive pole of the 4th electrochemical capacitor (E4) is connected with the negative pole of the 4th diode (D4), the 4th electrochemical capacitor
(E4) negative pole ground connection；
The plus earth of the 5th diode (D5), negative pole and the 7th resistance (R7) of the 5th diode (D5)
First end is connected, and the second end of the 7th resistance (R7) is connected with the second end of the 3rd electric capacity (C3).
8. it is as claimed in claim 1 reversely to close valve circuit, it is characterised in that first output end (OUT1) of the MCU (2) is defeated
Go out the first square-wave signal, second output end (OUT2) of the MCU (2) exports the second square-wave signal, first square-wave signal
, dutycycle identical from the second square wave signal frequency is different.
9. it is as claimed in claim 8 reversely to close valve circuit, it is characterised in that first square-wave signal and second square wave
The dutycycle sum of signal is 1.
10. it is as claimed in claim 1 reversely to close valve circuit, it is characterised in that the 3rd output end (OUT3) of the MCU (2)
Output is pulse width modulation (PWM) signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611069171.5A CN106783007B (en) | 2016-11-29 | 2016-11-29 | A kind of reversed pass valve circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611069171.5A CN106783007B (en) | 2016-11-29 | 2016-11-29 | A kind of reversed pass valve circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783007A true CN106783007A (en) | 2017-05-31 |
| CN106783007B CN106783007B (en) | 2018-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611069171.5A Active CN106783007B (en) | 2016-11-29 | 2016-11-29 | A kind of reversed pass valve circuit |
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| Country | Link |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6021058A (en) * | 1997-08-07 | 2000-02-01 | Matsushita Electric Industrial Co., Ltd. | PWM inverter with zero dead time and initial power supply capacitor charging |
| CN203225658U (en) * | 2013-03-28 | 2013-10-02 | 重庆徐港电子有限公司 | Self-conduction boost switch power supply |
| CN204167973U (en) * | 2014-11-21 | 2015-02-18 | 惠州市蓝微电子有限公司 | A kind of ON-OFF control circuit that can certainly turn off |
| CN104976408A (en) * | 2015-07-20 | 2015-10-14 | 杨迎龙 | Electromagnetic valve control circuit and method |
-
2016
- 2016-11-29 CN CN201611069171.5A patent/CN106783007B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6021058A (en) * | 1997-08-07 | 2000-02-01 | Matsushita Electric Industrial Co., Ltd. | PWM inverter with zero dead time and initial power supply capacitor charging |
| CN203225658U (en) * | 2013-03-28 | 2013-10-02 | 重庆徐港电子有限公司 | Self-conduction boost switch power supply |
| CN204167973U (en) * | 2014-11-21 | 2015-02-18 | 惠州市蓝微电子有限公司 | A kind of ON-OFF control circuit that can certainly turn off |
| CN104976408A (en) * | 2015-07-20 | 2015-10-14 | 杨迎龙 | Electromagnetic valve control circuit and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106783007B (en) | 2018-08-21 |
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