CN106774599A - A kind of voltage modulator circuit of high PSRR - Google Patents
A kind of voltage modulator circuit of high PSRR Download PDFInfo
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- CN106774599A CN106774599A CN201611186343.7A CN201611186343A CN106774599A CN 106774599 A CN106774599 A CN 106774599A CN 201611186343 A CN201611186343 A CN 201611186343A CN 106774599 A CN106774599 A CN 106774599A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
Abstract
The present invention proposes a kind of voltage modulator circuit that can be used for the high PSRR of intelligent card chip.In order to improve the PSRR of high frequency, using NMOS as output stage power tube.Meanwhile, the present invention proposes a kind of power selection circuit, it is ensured that voltage regulator can also normal work under C class Power Supplies Conditions.
Description
Technical field
The invention belongs to technical field of integrated circuits, it is related to a kind of voltage modulator circuit, especially high PSRR
Voltage modulator circuit.
Background technology
In field of power management, voltage regulator (LDO) is by wide spectrum.Voltage regulator is for steady in analog circuit
Determine the circuit of voltage, for smart card class power regulator, the purpose is to for substantial amounts of memory cell (such as CPU,
SRAM, FLASH) stable power supply is provided, it is ensured that in rational operating voltage range.In intelligent card chip, outside VCC electricity
Source can be operated in A classes (4.5V~5.5V), under three kinds of operating voltages of B classes (2.7V~3.3V) and C classes (1.62V~1.98V),
Therefore need to be internally integrated voltage regulator, by outside VCC voltages, be changed into relatively low builtin voltage (1V~1.5V), give
Internal circuit is used.The present invention proposes a kind of voltage modulator circuit of high PSRR, can be in frequency range very wide
Interior (to MHz ranks), there is provided sufficiently high PSRR.
The content of the invention
The present invention proposes a kind of voltage modulator circuit of high PSRR.Common voltage modulator circuit is used
PMOS is used as output-stage power pipe, and compensation way is usually miller-compensated mode.Because miller-compensated presence, causes height
When frequency, the grid and drain electrode short circuit of power output pipe, output-stage power pipe is diode current flow form, so that the electricity of high frequency
It is very poor that source suppresses ratio.In order to improve the PSRR of high frequency, in the present invention, output-stage power pipe uses NMOS tube, and
Compensation way in the grid of NMOS in the form of compensating electric capacity is added.At low frequency, PSRR by loop increasing
Benefit determines, and at high frequencies, PSRR mainly by the compensating electric capacity of power tube grid and the grid of power tube and
The ratio of the electric capacity Cgd between drain electrode is determined.By selecting the value of suitable compensating electric capacity, the PSRR of high frequency can be improved
Value.
Circuit of the present invention includes core (CORE) and power selection circuit.In CORE circuits, including amplifier, output stage work(
Rate pipe NM1, loop compensation electric capacity C1, output filter capacitor C2 and feedback resistance RF1, RF2. in the present invention, in order to provide height
The PSRR of frequency, power tube NM1 selects the form of NMOS.NM1 can be various types of high pressure NMOS parts, including mark
Accurate high tension apparatus, the high pressure NMOS part in separate high pressure N traps, Low threshold high pressure NMOS, or even intrinsic high pressure NMOS.
For intelligent card chip, when C classes are operated in, the voltage range of chip power VCC is 1.62V~1.98V,
If the input power of amplifier is the additional power source VCC of chip, the circuit in amplifier can have that voltage margin is inadequate, leads
Cause loop gain to decline, reduce PSRR.In the present invention, the power supply of discharge circuit is provided by power selection circuit,
In power selection circuit, using charge pump circuit, supply voltage of 2 times of voltages of VCC as amplifier can be exported, so as to protect
Under C class Power Supplies Conditions, discharge circuit has enough voltage margins to card.In order to prevent in A, under the conditions of B classes, amplifier supply voltage
It is too high, cause the problem of the device overvoltage of discharge circuit, the present invention to include power sense circuit, detect chip power VCC
In A, when B classes work, the output signal of power sense circuit is low level, and charge pump circuit is closed, and output voltage is chip electricity
Source voltage VCC, when chip power VCC works in C classes, power sense circuit is output as high level, and charge pump circuit is enabled, defeated
Go out voltage for 2 times of VCC.So as to ensure in the working range of whole chip power, the circuit in amplifier has enough voltage abundant
Degree, there will not be the problem of overvoltage.
Brief description of the drawings
The structure chart of Fig. 1 voltage modulator circuits
The structure chart of Fig. 2 power selection circuits
Specific embodiment
To make technological means, creation characteristic, reached purpose and effect of present invention realization it can be readily appreciated that with reference to specific
Implementation method, is expanded on further the present invention.
It is specific below in conjunction with the accompanying drawings to introduce operation principle of the present invention
Voltage modulator circuit is as shown in figure 1, voltage modulator circuit is divided into power selection circuit (101) and CORE circuits
(102).In power selection circuit (101), according to the different voltages of VCC, provide suitable to the discharge circuit in CORE circuits
Supply voltage (VCC_OP).In CORE circuits (102), amplifier (OP) (103), output-stage power pipe NM1 are specifically included
(104), loop compensation electric capacity C1 (105), output filter capacitor C2 (106), feedback resistance RF1 (107) and RF2 (108).Amplifier
(103) anode input meets reference voltage VREF, and negative terminal input connects the negative terminal of feedback resistance RF1 and the anode of feedback resistance RF2,
The output of amplifier (103) connects the anode of loop compensation electric capacity C1 (105) and the grid of power tube NM1 (104), amplifier (103)
Power supply connects the output of power selection circuit.The output of the positive termination amplifier (103) of loop compensation electric capacity C1 (105), and power
The grid of pipe NM1 (104), negativing ending grounding.The grid of power tube NM1 (103) connects the output of amplifier (103), and loop compensation
The anode of electric capacity C1 (105), drain electrode meets supply voltage VCC, and source electrode meets output voltage VO UT.The substrate of power tube NM1 (103) can
So that according to the difference of selector type, selection connects output voltage VO UT or ground connection.The anode of output filter capacitor C2 (106)
Meet output voltage VO UT, negativing ending grounding.The positive termination output voltage VO UT of feedback resistance RF1 (107), negative terminal voltage meets RF2
(108) anode and the negative input end of amplifier (103).The anode of feedback resistance RF2 (108) connects the negative of feedback resistance RF1 (107)
End and the negative input end of amplifier (103), negativing ending grounding.CORE circuits according to input VREF voltage and feedback resistance ratio,
In the presence of the negative-feedback of amplifier, the output voltage VO UT=VREF* (1+RF1/RF2) that can be stablized.
Output-stage power pipe in CORE circuits (102) is nmos device, such that it is able to eliminate the miller-compensated height for causing
Frequency high-frequency suppressing is than too low problem.At high frequencies, PSRR is mainly by the loop compensation of NM1 (104) grid NG
The capacitance of the Cgd of electric capacity C1 (105) and NM1 is determined.Increasing the value of C1 can improve the PSRR of high frequency.
CORE circuits are operated very well in the case where chip operation power supply VCC is A classes and B classes, but in the situation of C classes
Under, amplifier can have that voltage margin is not enough, so as to loop gain and PSRR can be reduced.The present invention proposes power supply
Selection circuit solves this problem.
Fig. 2 is the power selection circuit proposed in the present invention, including power sense circuit (201) and charge pump circuit
(202).Power sense circuit (201) for detection chip operating voltage range, and charge pump circuit can export 1 times or
The voltage of 2 times of VCC is used as the power supply of amplifier.Three ends of power sense circuit (201) respectively with supply voltage VCC, with reference to electricity
Pressure VREF, and charge pump circuit is connected.Three ends of charge pump circuit (202) respectively with supply voltage VCC, power supply selection electricity
Road, and discharge circuit is connected.The voltage of power sense circuit (201) detection chip supply voltage VCC and reference voltage VREF,
Pump_en signals are exported to charge pump circuit.When VCC works in A classes and B classes, the value of power detecting output signal pump_en
It is low level, charge pump circuit is closed, and output voltage VCC_OP is equal to chip power voltage VCC.And work as what chip worked in C classes
When, the output signal pump_en of power sense circuit is high level, and charge pump circuit functions, output voltage VCC_OP is equal to 2
Times chip power voltage.By the different voltage status according to chip power, different VCC_OP electricity are provided to the power supply of amplifier
Pressure value, so as to ensure in the working range of whole chip power voltage, the device in amplifier has enough voltage margins, from
And ensureing voltage modulator circuit has sufficiently high loop gain and PSRR.
General principle of the invention, principal character and advantages of the present invention has been shown and described above.The technology of the industry
Personnel it should be appreciated that the present invention is not limited to the above embodiments, simply explanation described in above-described embodiment and specification this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by described claims and its
Equivalent thereof.
Claims (5)
1. a kind of voltage modulator circuit of high PSRR, it is characterised in that including two parts：Voltage-regulation core circuit
And power selection circuit.
2. a kind of voltage modulator circuit of the high PSRR as described in jurisdictions mandate 1, it is characterised in that voltage-regulation core
Electrocardio route an amplifier, power tube NM1, loop compensation electric capacity C1, output filter capacitor C2 and two feedback resistances RF1, RF2
Constitute, wherein：The anode input of amplifier connects reference voltage, and negative terminal input connects the negative terminal and feedback resistance RF2 of feedback resistance RF1
Anode；The output of amplifier connects the anode of loop compensation electric capacity C1 and the grid of power tube NM1, and the power supply of amplifier connects power supply selection electricity
The output on road；The output of the positive termination amplifier of loop compensation electric capacity C1, and power tube NM1 grid, negativing ending grounding；Power tube
The grid of NM1 connects the output of amplifier, and loop compensation electric capacity C1 anode, drain electrode connects supply voltage, and source electrode connects output voltage；
The substrate of power tube NM1 can be selected to connect output voltage or ground connection according to the difference of selector type；Output filter capacitor
The positive termination output voltage of C2, negativing ending grounding；The positive termination output voltage of feedback resistance RF1, negative terminal voltage connect RF2 anode and
The negative input end of amplifier；The anode of feedback resistance RF2 connects the negative terminal of feedback resistance RF1 and the negative input end of amplifier, negativing ending grounding.
3. a kind of voltage modulator circuit of high PSRR as claimed in claim 1, it is characterised in that power supply selection electricity
Routing power detects circuit and charge pump circuit composition, wherein：Three ends of power sense circuit respectively and supply voltage, with reference to electricity
Pressure, and charge pump circuit is connected；Three ends of charge pump circuit are respectively and supply voltage, power sense circuit, and amplifier are electric
Road is connected；Power selection circuit chooses whether to enable charge pump circuit according to reference voltage and the ratio of chip power；Charge pump
Circuit provides power supply to the amplifier of core circuit；According to the different output valves of power selection circuit, charge pump output voltage is 1 times
Or 2 times of chip power voltage.
4. the voltage modulator circuit of a kind of high PSRR as described in jurisdictions mandate 1, it is characterised in that power tube is
Nmos device.
5. the voltage modulator circuit of a kind of high PSRR as described in jurisdictions mandate 1, it is characterised in that according to power supply electricity
The difference of pressure, suitable supply voltage is provided by charge pump circuit to discharge circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611186343.7A CN106774599A (en) | 2016-12-20 | 2016-12-20 | A kind of voltage modulator circuit of high PSRR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611186343.7A CN106774599A (en) | 2016-12-20 | 2016-12-20 | A kind of voltage modulator circuit of high PSRR |
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| Publication Number | Publication Date |
|---|---|
| CN106774599A true CN106774599A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611186343.7A Pending CN106774599A (en) | 2016-12-20 | 2016-12-20 | A kind of voltage modulator circuit of high PSRR |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109901653A (en) * | 2019-04-03 | 2019-06-18 | 西安交通大学 | A kind of NMOS adjustment pipe low dropout linear regulator structure and its application |
| CN112256081A (en) * | 2020-10-27 | 2021-01-22 | 电子科技大学 | Low dropout regulator with self-adaptive charge pump |
| CN114825907A (en) * | 2022-04-12 | 2022-07-29 | 湖南国科微电子股份有限公司 | Voltage-withstanding protection bias circuit and chip power supply circuit |
| CN116880633A (en) * | 2023-07-10 | 2023-10-13 | 深圳飞渡微电子有限公司 | Low-dropout linear voltage regulator circuit capable of improving power supply voltage rejection ratio |
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| EP0500381A2 (en) * | 1991-02-22 | 1992-08-26 | STMicroelectronics, Inc. | Adaptive voltage regulator |
| US20020130646A1 (en) * | 2001-01-26 | 2002-09-19 | Zadeh Ali Enayat | Linear voltage regulator using adaptive biasing |
| CN101866193A (en) * | 2009-04-14 | 2010-10-20 | 上海立隆微电子有限公司 | Linear voltage-stabilizing circuit and control chip thereof |
| CN102609022A (en) * | 2011-01-24 | 2012-07-25 | 上海华虹集成电路有限责任公司 | Power management circuit of dual interface card and method |
| CN102930331A (en) * | 2012-11-15 | 2013-02-13 | 北京昆腾微电子有限公司 | Power supply management circuit of double-interface card and double-interface card |
| CN103336546A (en) * | 2013-07-20 | 2013-10-02 | 福州大学 | Low-voltage difference voltage stabilizing circuit with current-limiting protection function under double high power supply voltage input |
-
2016
- 2016-12-20 CN CN201611186343.7A patent/CN106774599A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0500381A2 (en) * | 1991-02-22 | 1992-08-26 | STMicroelectronics, Inc. | Adaptive voltage regulator |
| US20020130646A1 (en) * | 2001-01-26 | 2002-09-19 | Zadeh Ali Enayat | Linear voltage regulator using adaptive biasing |
| CN101866193A (en) * | 2009-04-14 | 2010-10-20 | 上海立隆微电子有限公司 | Linear voltage-stabilizing circuit and control chip thereof |
| CN102609022A (en) * | 2011-01-24 | 2012-07-25 | 上海华虹集成电路有限责任公司 | Power management circuit of dual interface card and method |
| CN102930331A (en) * | 2012-11-15 | 2013-02-13 | 北京昆腾微电子有限公司 | Power supply management circuit of double-interface card and double-interface card |
| CN103336546A (en) * | 2013-07-20 | 2013-10-02 | 福州大学 | Low-voltage difference voltage stabilizing circuit with current-limiting protection function under double high power supply voltage input |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109901653A (en) * | 2019-04-03 | 2019-06-18 | 西安交通大学 | A kind of NMOS adjustment pipe low dropout linear regulator structure and its application |
| CN112256081A (en) * | 2020-10-27 | 2021-01-22 | 电子科技大学 | Low dropout regulator with self-adaptive charge pump |
| CN112256081B (en) * | 2020-10-27 | 2021-07-02 | 电子科技大学 | Low dropout regulator with self-adaptive charge pump |
| CN114825907A (en) * | 2022-04-12 | 2022-07-29 | 湖南国科微电子股份有限公司 | Voltage-withstanding protection bias circuit and chip power supply circuit |
| CN114825907B (en) * | 2022-04-12 | 2024-06-04 | 湖南国科微电子股份有限公司 | Withstand voltage protection bias circuit and chip power supply circuit |
| CN116880633A (en) * | 2023-07-10 | 2023-10-13 | 深圳飞渡微电子有限公司 | Low-dropout linear voltage regulator circuit capable of improving power supply voltage rejection ratio |
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