CN106712497A - Cross coupling charge pump - Google Patents
Cross coupling charge pump Download PDFInfo
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- CN106712497A CN106712497A CN201611261657.9A CN201611261657A CN106712497A CN 106712497 A CN106712497 A CN 106712497A CN 201611261657 A CN201611261657 A CN 201611261657A CN 106712497 A CN106712497 A CN 106712497A
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- pipe
- transmitting switch
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- voltage
- charge pump
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention provides a cross coupling charge pump comprising a boost module and a transmission module; the transmission module comprises a first transmission switch and a second transmission switch; input ends of the first and second transmission switches are respectively connected with a first output end and a second output end of the boost module; output ends of the first and second transmission switches are connected; grid ends of the first and second transmission switches are respectively connected with a first grid voltage control circuit and a second grid voltage control circuit, thus enlarging the grid voltage amplitude of the first and second transmission switches to double the power supply voltage. The cross coupling charge pump uses only two MOSFETs to enlarge the grid voltage amplitude of the PMOS transmission switches, thus using less chip areas; in addition, the substrate voltage of pair transistors can be controlled so as to reduce sub-threshold and conduction dual losses; in addition, the cross coupling charge pump is simple in structure, stable in signals, highly symmetrical in circuit topology, thus effectively reducing influences caused by nonideality factors like circuit mismatch, and providing very good robustness.
Description
Technical field
The present invention relates to field of power management, more particularly to a kind of cross-couplings charge pump.
Background technology
AMOLED (Active Matrix/Organic Light Emitting Diode, active-matrix organic light emission two
Polar body panel) display panel driving chip major function receive MCU (Micro Control Unit, micro-control unit) passed
The display of the number format passed and control signal, the grid driving voltage opened line by line, and control pixel are provided to display panel
The source driving voltage of gray scale, the grid driving voltage needed for small-medium size AMOLED in conventional portable device is ± (3~8) V,
Source driving voltage is 0.3~4.2V.These driving voltages are that the power-supply management system (MPS) by being integrated in driving chip is produced
's.Wherein, power-supply management system divides according to working method, is broadly divided into three classes, respectively low-voltage-drop linear voltage regulator
(LDO), inductive type Switching Power Supply and capacitive switches power supply, and capacitive switches power supply is also known as charge pump.
For the application scenario of portable communication apparatus, for inductive type Switching Power Supply, low-voltage drop linear voltage stabilizing
Not only area occupied is small for device and charge pump, and without magnetic design, with certain advantage, but LDO can be only done step-down and turn
Change, charge pump then can on a large scale be boosted for supply voltage, is depressured and back-pressure, therefore as portable communication apparatus
The best solution of middle display driver chip power-supply management system.
Charge pump is divided into Dickson charge pump topology according to different topological structures, and ladder is topological, Fibonacci topologys,
The structure such as electric capacity series-parallel connection topology and cross-couplings topology, wherein it is possible to provide the cross-couplings type electric charge of automatic reverse biasing
Pump shows efficiency and smaller ripple higher.As shown in figure 1, existing cross-couplings type charge pump circuit includes：First
Cross-coupled pair, the second cross-coupled pair and two electric capacity.Wherein, the first cross-coupled pair be NMOS tube MN1 and MN2,
The drain terminal connection input voltage vin of NMOS tube MN1 and MN2, the source of NMOS tube MN1 connects the top crown of an electric capacity, the electric capacity
Bottom crown connection clock signal clk 1；The source of NMOS tube MN2 connects the top crown of an electric capacity, the bottom crown connection of the electric capacity
Clock signal clk 2.Two top crowns of electric capacity connect the input of the second cross-coupled pair respectively, and the second cross-coupled pair is
PMOS MP1 and MP2, PMOS MP1 is connected with the output end of MP2, and connects output capacitance Cout and load LOAD.PMOS
The gate source voltage amplitude of oscillation of MP1 and MP2 between Vin and 2Vin, according to the current formula of MOSFET：
If increase gate source voltage amplitude of oscillation VGS, then the electrical conductivity of above-mentioned transmitting switch will necessarily be improved, so as to improve electric charge
The efficiency of transmission of pump.Therefore, transported extensively using the modified form cross-couplings charge pump of Level-Shift (level translator)
With the modified form cross-couplings charge pump of Level-Shift can increase the gate source voltage amplitude of oscillation, but Level-Shift needs to account for
With larger chip area, and because its operation principle is based on positive feedback, if occurring mismatching in manufacturing process etc. non-
Desirable factors, the regenerative feedback loop of circuit cannot probably work, therefore the less stable of the circuit.
In capacitor type direct current transducer (DC-DC), the electrical conductivity of transmitting switch has important shadow to the conversion efficiency of circuit
Ring.If electrical conductivity is relatively low, more voltage loss is had on the equivalent resistance of transmitting switch, so as to reduce conversion efficiency.
The use of level translator (Level-Shift) can improve the problem, but the module chip occupying area is larger, and its work
Make to be based on regenerative feedback loop, easily influenceed by circuit mismatch, robustness is poor.
Therefore, on the basis of chip large area is not take up, the electrical conductivity of transmitting switch how is improved, improves conversion effect
Rate, improving robustness has turned into one of those skilled in the art's problem demanding prompt solution.
The content of the invention
The shortcoming of prior art, it is an object of the invention to provide a kind of cross-couplings charge pump, uses in view of the above
In solving in the prior art that charge pump conversion efficiency is low, chip occupying area big, poor robustness the problems such as.
In order to achieve the above objects and other related objects, the present invention provides a kind of cross-couplings charge pump, the intersection coupling
Closing charge pump at least includes：
Boost module, for being boosted to supply voltage；
Transport module, is connected to the output end of the boost module, for exporting the voltage after boosting；
Wherein, the transport module includes the first transmitting switch and the second transmitting switch, first transmitting switch and institute
The input for stating the second transmitting switch connects first output end and the second output end of the boost module respectively；Described first passes
Defeated switch is connected with the output end of second transmitting switch, used as output end；First transmitting switch is passed with described second
The grid end of defeated switch connects the first grid voltage control circuit and the second grid voltage control circuit respectively, for by first transmitting switch
2 times of supply voltages are increased to the grid swing of second transmitting switch.
Preferably, first grid voltage control circuit and second grid voltage control circuit include respectively：Lower amplitude of oscillation transmission
Pipe and upper amplitude of oscillation transfer tube, the lower amplitude of oscillation transfer tube are connected in series with the upper amplitude of oscillation transfer tube, the lower amplitude of oscillation transfer tube
Source ground connection, the source of the upper amplitude of oscillation transfer tube connects the output end of transmitting switch, the grid end of the lower amplitude of oscillation transfer tube
Connection clock control signal, the grid end of the upper amplitude of oscillation transfer tube connects the input of transmitting switch.
Preferably, the boost module includes first pair of pipe, second pair of pipe, the first electric capacity and the second electric capacity, described first
Pipe is connected with second pair of pipe cross-couplings, first pair of pipe be connected with the drain terminal of second pair of pipe supply voltage,
Source connects the top crown of first electric capacity and second electric capacity respectively, during the bottom crown connection first of first electric capacity
Clock control signal, the bottom crown connection second clock control signal of second electric capacity, first electric capacity and second electricity
The top crown of appearance is used as output end.
It is highly preferred that clock when the boost module also includes being connected to first underlayer voltage at first pair of ttom of pipe end
Circuit processed and the second underlayer voltage clock control circuit for being connected to second pair of ttom of pipe end, the first underlayer voltage clock
Control circuit and the second underlayer voltage clock control circuit include respectively：Upper trombone slide and lower trombone slide, the upper trombone slide and institute
State lower trombone slide to be connected in series, the source connection supply voltage of the upper trombone slide, the source ground connection of the lower trombone slide, the upper trombone slide
It is connected with the grid end of the lower trombone slide and connection control signal, the control signal of the first underlayer voltage clock control circuit is
First clock control signal, the control signal of the second underlayer voltage clock control circuit is second clock control signal.
It is highly preferred that the transport module also includes the first substrate control pipe and the second substrate control pipe, first lining
The drain terminal of bottom control pipe connects bottom, the grid that the input of first transmitting switch, source connect first transmitting switch
The input of end connection second transmitting switch；The drain terminal of the second substrate control pipe connects second transmitting switch
Input, source connect the bottom of second transmitting switch, grid end and connect the input of first transmitting switch.
As described above, cross-couplings charge pump of the invention, has the advantages that：
The grid voltage control circuit that cross-couplings charge pump of the invention is only constituted with 2 MOSFET just completes increase PMOS
The function of the grid swing of transmitting switch, occupies smaller chip area.And, increase the substrate electricity to NMOS transmitting switches
Voltage-controlled system, reduces dual loss when subthreshold value and conducting.Additionally, cross-couplings charge pump construction of the invention is simple, letter
Number stabilization, and circuit topology high degree of symmetry, effectively reduce the influence that the non-ideal factors such as circuit mismatch bring, with fine
Robustness.
Brief description of the drawings
Fig. 1 is shown as the structural representation of cross-couplings type charge pump circuit of the prior art.
Fig. 2 is shown as the structural representation of cross-couplings charge pump of the invention.
Component label instructions
1 cross-couplings charge pump
11 boost modules
111 first underlayer voltage clock control circuits
112 second underlayer voltage clock control circuits
12 transport modules
The voltage-controlled system electricity of 121 first grids
122 second grid voltage control circuits
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages of the invention and effect easily.The present invention can also be by specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Refer to Fig. 2.It should be noted that the diagram provided in the present embodiment only illustrates of the invention in a schematic way
Basic conception, component count, shape when only display is with relevant component in the present invention rather than according to actual implementation in schema then
And size is drawn, it is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout
Kenel is likely to increasingly complex.
As shown in Fig. 2 the present invention provides a kind of cross-couplings charge pump 1, the cross-couplings charge pump 1 at least includes：
Boost module 11 and transport module 12.
As shown in Fig. 2 the boost module 11 is connected to the input of the transport module 12, for supply voltage
Vin is boosted.
Specifically, as shown in Fig. 2 the boost module 11 includes first couple of pipe Mn1, second pair of pipe Mn2, the first substrate electricity
Pressure clock control circuit 111, the second underlayer voltage clock control circuit 112, the first electric capacity C1 and the second electric capacity C2.
More specifically, first couple of pipe Mn1 is connected with second pair of pipe Mn2 cross-couplings, and in the present embodiment, institute
First couple of pipe Mn1 and second couple of pipe Mn2 is stated for NMOS tube, the drain terminal connection supply voltage Vin of first couple of pipe Mn1,
Grid end connects the grid end that the source of second couple of pipe Mn2, source connect second couple of pipe Mn2；Second couple of pipe Mn2's
Drain terminal connection supply voltage Vin, grid end connect the grid that the source of first couple of pipe Mn1, source connect first couple of pipe Mn1
End.
More specifically, the first underlayer voltage clock control circuit 111 is connected to the bottom of first couple of pipe Mn1,
Including trombone slide Mp3 and first time trombone slide Mn3 on first, trombone slide Mp3 connects company with first time trombone slide Mn3 on described first
Connect, in the present embodiment, trombone slide Mp3 is PMOS on described first, and first time trombone slide Mn3 is NMOS tube, described first
The source connection supply voltage Vin of upper trombone slide Mp3, drain terminal connect the drain terminal of first time trombone slide Mn3 and connect as output end
Connect the bottom of first couple of pipe Mn1, the source ground connection of first time trombone slide Mn3, trombone slide Mp3 and described the on described first
Once the grid end of trombone slide Mn3 connects the first clock control signal CLK1.The second voltage clock control circuit 112 is connected to institute
State second pair of bottom of pipe Mn2, including trombone slide Mp4 and second time trombone slide Mn4 on second, on described second trombone slide Mp4 with it is described
Second time trombone slide Mn4 is connected in series, and in the present embodiment, trombone slide Mp4 is PMOS, second time trombone slide on described second
Mn4 is NMOS tube, and the source connection supply voltage Vin of trombone slide Mp4, drain terminal connect second time trombone slide Mn4 on described second
Drain terminal and the bottom of two couples of pipe Mn4 is connected as output end, the source of second time trombone slide Mn4 is grounded, described the
The grid end connection second clock control signal CLK2 of trombone slide Mp4 and second time trombone slide Mn4 on two.
More specifically, the top crown of the first electric capacity C1 connects the source of first couple of pipe Mn1 and as the liter
Second output end of die block 11, bottom crown connect the first clock control signal CLK1.The upper pole of the second electric capacity C2
Plate connects the source of second couple of pipe Mn2 and as the first output end of the boost module 11, bottom crown connection described the
Two clock control signal CLK2.
As shown in Fig. 2 the transport module 12 is connected to the output end of the boost module 11, after exporting boosting
Voltage.
Specifically, as shown in Fig. 2 the transport module 12 includes the first transmitting switch Mp1, the second transmitting switch Mp2, the
One grid voltage control circuit 121, the second grid voltage control circuit 122, the first substrate control pipe Mp5 and the second substrate control pipe Mp6.
More specifically, the first transmitting switch Mp1 is connected described respectively with the input of the second transmitting switch Mp2
First output end and the second output end of boost module 11, the first transmitting switch Mp1 is with the second transmitting switch Mp2's
Output end is connected, used as output end.In the present embodiment, the first transmitting switch Mp1 and the second transmitting switch Mp2 is
PMOS, used as input, drain terminal is used as output end for source.
More specifically, first grid voltage control circuit 121 is connected to the grid end of the first transmitting switch Mp1, it is described
First grid voltage control circuit 121 includes：Amplitude of oscillation transfer tube Mp7 is connected in series on first time amplitude of oscillation transfer tube Mn5 and first, described
Amplitude of oscillation transfer tube Mp7 on first time amplitude of oscillation transfer tube Mn5 and described first, in the present embodiment, first time amplitude of oscillation transmission
Pipe Mn5 is NMOS tube, and amplitude of oscillation transfer tube Mp7 is PMOS on described first, and the source of first time amplitude of oscillation transfer tube Mn5 connects
Ground, drain terminal connect on described first the drain terminal of amplitude of oscillation transfer tube Mp7 and connect the first transmitting switch Mp1's as output end
Grid end, the source of amplitude of oscillation transfer tube Mp7 connects the output end of the first transmitting switch Mp1 on described first, under described first
The grid end of amplitude of oscillation transfer tube Mn5 connects the second clock control signal CLK2, the grid end of amplitude of oscillation transfer tube Mp7 on described first
Connect the input of the first transmitting switch Mp1.Second grid voltage control circuit 122 is connected to second transmitting switch
The grid end of Mp2, second grid voltage control circuit 122 includes：Amplitude of oscillation transfer tube on second time amplitude of oscillation transfer tube Mn6 and second
Mp8 is connected in series, amplitude of oscillation transfer tube Mp8 on second time amplitude of oscillation transfer tube Mn6 and described second, in the present embodiment, institute
It is NMOS tube to state second time amplitude of oscillation transfer tube Mn6, and amplitude of oscillation transfer tube Mp8 is PMOS, second time amplitude of oscillation on described second
The source ground connection of transfer tube Mn5, drain terminal connect on described second the drain terminal of amplitude of oscillation transfer tube Mp8 and described as output end connection
The grid end of the second transmitting switch Mp2, the source of amplitude of oscillation transfer tube Mp8 connects the second transmitting switch Mp2's on described second
Output end, the grid end of second time amplitude of oscillation transfer tube Mn6 connects the first clock control signal CLK1, is put on described second
The grid end of width transfer tube Mp8 connects the input of the second transmitting switch Mp2.First grid voltage control circuit 121 and institute
Stating the second grid voltage control circuit 122 is used for the grid swing of the first transmitting switch Mp1 and the second transmitting switch Mp2
Increase to 2 times of supply voltage Vin.
More specifically, in the present embodiment, the first substrate control pipe Mp5 is PMOS, the first substrate control
The drain terminal of pipe Mp5 connects the input of the first transmitting switch Mp1, source and connects the first transmitting switch Mp1 and described
The bottom of amplitude of oscillation transfer tube Mp7, the input of grid end connection the second transmitting switch Mp2 on first.In the present embodiment, institute
The second substrate control pipe Mp6 is stated for PMOS, the drain terminal of the second substrate control pipe Mp6 connects second transmitting switch
The input of Mp2, source connect the bottom of amplitude of oscillation transfer tube Mp8 on the second transmitting switch Mp2 and described second, grid end and connect
Connect the input of the first transmitting switch Mp1.
It is the first transmitting switch Mp1, the second transmitting switch Mp2, amplitude of oscillation transfer tube Mp7 on described first, described
The substrate connection lining of amplitude of oscillation transfer tube Mp8, the first substrate control pipe Mp5 and the second substrate control pipe Mp6 on second
Bottom electric capacity CB。
The output end connection output capacitance Cout and load LOAD of the transport module 12.
The operation principle of the cross-couplings charge pump 1 is as follows：
Because MOSFET has bulk effect, when source serves as a contrast voltage VSBDuring increase, MOSFET width of depletion region increases, threshold voltage
Increase, expression is：
Wherein, γ is body-effect coefficient.
So, when the first clock control signal CLK1 is high level, trombone slide Mp3 cut-offs, described on described first
First time trombone slide Mn3 conducting, the underlayer voltage of first couple of pipe Mn1 is pulled down to ground level, the source of first couple of pipe Mn1
Lining voltage VSBIncrease, threshold voltage VTHIncrease, now the gate source voltage V of first couple of pipe Mn1GSIt is low level, described first
Pipe Mn1 is switched and is ended, simultaneously because threshold voltage VTHIncrease, the subthreshold value for being greatly reduced first couple of pipe Mn1 is led
Electrical loss.The bottom electrode of the first electric capacity C1 is high level (Vin) by ground level saltus step, because the voltage at electric capacity two ends can not
Mutation, therefore the top crown of the first electric capacity C1 is 2Vin by Vin saltus steps.
The first clock control signal CLK1 and second clock control signal CLK2 is inverted signal, i.e., described second
Clock control signal CLK2 is low level, trombone slide Mp4 conductings on described second, second time trombone slide Mn4 cut-offs, described second
The source lining voltage V of supply voltage Vin, second couple of pipe Mn2 is essentially pulled up to the underlayer voltage of pipe Mn2SBIt is reduced to negative voltage,
Threshold voltage VTHReduce, now the gate source voltage V of second couple of pipe Mn2GSIt is high level, second couple of pipe Mn2 switches are beaten
Open, while according to formula (1), low threshold voltage increases the conducting electric current of switching tube, reduces voltage loss during conducting.Institute
State the second electric capacity C2 and be in charged state, its top crown is charged to supply voltage Vin.
Now, the first output end Vp1 of the boost module 11 be low level (Vin), the second output end Vp2 be high level
(2Vin), first time amplitude of oscillation transfer tube Mn5 cut-offs, amplitude of oscillation transfer tube Mp7 conductings on described first, then first transmission
Switch Mp1 cut-offs；Second time amplitude of oscillation transfer tube Mn6 conducting, amplitude of oscillation transfer tube Mp8 cut-offs on described second, then described the
Two transmitting switch Mp2 are turned on, and the 2Vin of the second output end of the boost module 11 is output, while second substrate is controlled
Pipe Mp6 is turned on, and the underlayer voltage of the second transmitting switch Mp2 is pulled high to Vp2, i.e. 2Vin, be effectively prevent because of drain terminal
Voltage is raised and produces latch-up.
When the first clock control signal CLK1 is low level, the second clock control signal CLK2 is high level
When, operation principle is similar to, and does not repeat one by one herein.
Cross-couplings charge pump of the invention realizes the grid swing of increase PMOS transmitting switches by grid voltage control circuit
Function, the grid voltage control circuit only constitutes with 2 MOSFET, occupies smaller chip area；Transmitted by PMOS
The control of switch substrate eliminates latch-up；Increase the control of underlayer voltage clock control circuit simultaneously to the underlayer voltage of pipe, subtract
Dual loss when small subthreshold value and conducting.Additionally, cross-couplings charge pump construction of the invention is simple, signal stabilization, and
And circuit topology high degree of symmetry, the influence that the non-ideal factors such as circuit mismatch bring is effectively reduced, with good robustness.
In sum, the present invention provides a kind of cross-couplings charge pump, including：Boost module, for entering to supply voltage
Row boosting；Transport module, is connected to the output end of the boost module, for exporting the voltage after boosting；Wherein, the transmission
Module includes the first transmitting switch and the second transmitting switch, the input of first transmitting switch and second transmitting switch
First output end and the second output end of the boost module are connected respectively；First transmitting switch is opened with the described second transmission
The output end of pass is connected, used as output end；First transmitting switch is connected respectively with the grid end of second transmitting switch
One grid voltage control circuit and the second grid voltage control circuit, for by the grid of first transmitting switch and second transmitting switch
The pressure amplitude of oscillation increases to 2 times of supply voltages.The grid voltage control circuit that cross-couplings charge pump of the invention is only constituted with 2 MOSFET
The function of the grid swing of increase PMOS transmitting switches is just completed, smaller chip area is occupied.And, increase to NMOS
The underlayer voltage control of transmitting switch, reduces dual loss when subthreshold value and conducting.Additionally, cross-couplings electricity of the invention
Lotus pump configuration is simple, signal stabilization, and circuit topology high degree of symmetry, effectively reduces the non-ideal factors such as circuit mismatch and brings
Influence, with good robustness.So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial
Value.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit such as
Into all equivalent modifications or change, should be covered by claim of the invention.
Claims (5)
1. a kind of cross-couplings charge pump, it is characterised in that the cross-couplings charge pump at least includes：
Boost module, for being boosted to supply voltage；
Transport module, is connected to the output end of the boost module, for exporting the voltage after boosting；
Wherein, the transport module includes the first transmitting switch and the second transmitting switch, first transmitting switch and described the
The input of two transmitting switches connects first output end and the second output end of the boost module respectively；First transmission is opened
Pass is connected with the output end of second transmitting switch, used as output end；First transmitting switch is opened with the described second transmission
The grid end of pass connects the first grid voltage control circuit and the second grid voltage control circuit respectively, for by first transmitting switch and institute
The grid swing for stating the second transmitting switch increases to 2 times of supply voltages.
2. cross-couplings charge pump according to claim 1, it is characterised in that：First grid voltage control circuit and described
Second grid voltage control circuit includes respectively：Lower amplitude of oscillation transfer tube and upper amplitude of oscillation transfer tube, the lower amplitude of oscillation transfer tube with it is described on
Amplitude of oscillation transfer tube is connected in series, the source ground connection of the lower amplitude of oscillation transfer tube, the source connection transmission of the upper amplitude of oscillation transfer tube
The output end of switch, the grid end connection clock control signal of the lower amplitude of oscillation transfer tube, the grid end of the upper amplitude of oscillation transfer tube connects
Connect the input of transmitting switch.
3. cross-couplings charge pump according to claim 1, it is characterised in that：The boost module include first pair pipe,
Second pair of pipe, the first electric capacity and the second electric capacity, first pair of pipe are connected with second pair of pipe cross-couplings, described first pair
Pipe is connected supply voltage, source with the drain terminal of second pair of pipe and connects the upper of first electric capacity and second electric capacity respectively
Pole plate, the bottom crown of first electric capacity connects the first clock control signal, during the bottom crown connection second of second electric capacity
The top crown of clock control signal, first electric capacity and second electric capacity is used as output end.
4. cross-couplings charge pump according to claim 3, it is characterised in that：The boost module also includes being connected to institute
State first pair of first underlayer voltage clock control circuit at ttom of pipe end and be connected to the second substrate electricity at second pair of ttom of pipe end
Pressure clock control circuit, the first underlayer voltage clock control circuit and the second underlayer voltage clock control circuit are distinguished
Including：Upper trombone slide and lower trombone slide, the upper trombone slide are connected in series with the lower trombone slide, the source connection power supply electricity of the upper trombone slide
Pressure, the source ground connection of the lower trombone slide, the upper trombone slide is connected simultaneously connection control signal, described the with the grid end of the lower trombone slide
The control signal of one underlayer voltage clock control circuit is the first clock control signal, the second underlayer voltage clock control electricity
The control signal on road is second clock control signal.
5. cross-couplings charge pump according to claim 1, it is characterised in that：The transport module also includes the first substrate
Control pipe and the second substrate control pipe, the input of drain terminal connection first transmitting switch of the first substrate control pipe,
Source connects the bottom of first transmitting switch, grid end and connects the input of second transmitting switch；Second substrate
The drain terminal of control pipe connects bottom, the grid end that the input of second transmitting switch, source connect second transmitting switch
Connect the input of first transmitting switch.
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| CN201611261657.9A CN106712497B (en) | 2016-12-30 | 2016-12-30 | A kind of cross-coupling charge pump |
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| CN109274262A (en) * | 2017-07-18 | 2019-01-25 | 意法半导体国际有限公司 | Voltage quadrupler circuit based on single-stage CMOS |
| CN114552976A (en) * | 2022-03-02 | 2022-05-27 | 电子科技大学 | full-GaN gate drive circuit with high conversion rate |
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| XIAOJIAN YU等: "A Fully Integrated Multistage Cross-Coupled Voltage Multiplier With NO Reversion Power Loss in a Standard CMOS Process", 《IEEE》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109274262A (en) * | 2017-07-18 | 2019-01-25 | 意法半导体国际有限公司 | Voltage quadrupler circuit based on single-stage CMOS |
| CN109274262B (en) * | 2017-07-18 | 2020-12-18 | 意法半导体国际有限公司 | Voltage quadrupler circuit based on single-stage CMOS |
| CN114552976A (en) * | 2022-03-02 | 2022-05-27 | 电子科技大学 | full-GaN gate drive circuit with high conversion rate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106712497B (en) | 2019-10-11 |
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