CN106711251A - SIS/MIS structure flexible crystalline silicon battery - Google Patents
SIS/MIS structure flexible crystalline silicon battery Download PDFInfo
- Publication number
- CN106711251A CN106711251A CN201510786901.2A CN201510786901A CN106711251A CN 106711251 A CN106711251 A CN 106711251A CN 201510786901 A CN201510786901 A CN 201510786901A CN 106711251 A CN106711251 A CN 106711251A
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- Prior art keywords
- flexible
- silicon
- crystalline silicon
- solar battery
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 3
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 3
- 238000002161 passivation Methods 0.000 claims description 9
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 3
- 238000010297 mechanical methods and process Methods 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000003053 toxin Substances 0.000 abstract 1
- 231100000765 toxin Toxicity 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention aims at providing a flexible solar battery based on crystalline silicon. The flexible solar battery has the advantages that the crystalline silicon is environmentally friendly and has no toxin and harms; meanwhile, the flexible solar battery can also be prepared into a flexible and special shape, and meets the requirements of photovoltaic systems in special application fields. In order to realize the aim, a flexible crystalline silicon battery is prepared by adopting an SIS/MIS structure; the flexible crystalline silicon battery structurally comprises a flexible silicon wafer, a passivating layer, a transparent conductive layer and a back electrode. The flexible silicon wafer can be treated by a mechanical method and a chemical method, or the silicon wafer of the crystalline silicon is thinned to be 20 microns or lower by combining the mechanical method and the chemical method. The passivating layer is commonly formed by a silicon nitride thin film, a silicon dioxide thin film and an amorphous silicon thin film; the transparent conductive layer can be directly used as the passivating layer under certain conditions. The flexible solar battery provided by the invention has the advantages of simple equipment process, low cost and low energy consumption, and has good promotional value.
Description
Technical field
The present invention is new to be related to a kind of SIS/MIS structural flexibilities crystal silicon cell, belongs to the neck of solar cell
Domain.
Background technology
The environmental problem and the climate change risk related to fossil fuel power generation for becoming increasingly conspicuous, promote government's reality
Apply and be intended to reduce carbon dioxide and the reduction of greenhouse gas discharge strategy of other gas emissions.And global many oil
With natural gas production area politics and the unstability of economic situation, multinational government all adopting vigorous measures,
To reduce the dependence to foreign oil.Regenerative resource turns into the focus and emphasis of current research and application.Too
Positive energy generation technology has been put into China's emerging strategic as most important part in regenerative resource
In the planning of industry, the bright spot field as China's emerging strategic industries.
The mainstream market of current solar energy generation technology is occupied by photovoltaic plant with distributed generation system.Due to
The essential requirement of photovoltaic plant and distributed generation system, including efficiency high, good stability, tolerance to climate
High, the battery for being used is substantially crystal silicon cell.With current BIPV (BIPV)
Rise, the development of wearable intelligent equipment and the quick popularization of a large amount of consumer mobile device (including
Electric automobile, smart mobile phone etc.), its special shape and flexibility etc. require to make flexible solar battery obtain extensively
General attention.
Current flexible solar battery mainly has CIGS (CIGS), cadmium telluride (CdTe), dye sensitization
Solar cell (DSSC), organic solar batteries (OSC).Because flexible solar battery and the mankind give birth to
Work is closely related, and there is CdTe toxicity cannot apply in these batteries, and CdTe and CIGS equipment requirements are high,
Complex process, invests huge.In addition the environment friendly of CIGS and DSSC also needs to further raising, and
OSC and DSSC is also easy to damaged and fails in addition to facing the difficult shortcoming of large scale volume production.
It is an object of the invention to invent a kind of flexible solar battery based on crystalline silicon, with crystalline silicon
Environment-friendly, nontoxic advantage itself, while flexible and special shape can also be prepared into, meets special
The requirement of the photovoltaic system of different application field.The present invention has simple equipment and technology, low cost, energy consumption low
Advantage, with preferable promotional value.
The content of the invention
To achieve these goals, the present invention is adopted the following technical scheme that：
A kind of flexible crystalline silion cell of SIS/MIS structures, including flexible silicon chip, passivation layer, electrically conducting transparent
Layer, back electrode, it is characterised in that：Electrode structure order is back electrode, flexible silicon chip, passivation layer, transparent
Conductive layer.Flexible silicon chip can use mechanical means, chemical method, or combine mechanical means and chemical method, will
Crystalline silicon silicon is thinned to less than 20 microns.Passivation layer it is general by silicon nitride film, silica membrane and
Amorphous silicon membrane is formed, and transparency conducting layer can be used directly as passivation layer in some cases.
Brief description of the drawings
Accompanying drawing is structural representation of the invention, wherein 1 being flexible crystalline silicon silicon chip, 2 passivation layers, 3 being
Bright conductive layer, 4 are back electrode.
Specific embodiment
Embodiment 1
Using conventional battery silicon chip, 15 microns of flexible crystalline silicon silicon of thickness are prepared for using chemical method is thinning
Piece.Flexible silicon chip is placed on hot evaporation instrument, the Al of 500nm is deposited with the back side of silicon chip.The silicon being deposited with
Piece is annealed a hour at 600 degree, is formed by electrode.Entering hot evaporation instrument afterwards, in the front of silicon chip
The Cu metal levels of one layer of Cr metal level of 3nm of evaporation and 6nm.Battery is to be successfully prepared, and measures efficiency and is
3%.
Embodiment 2
Using conventional battery silicon chip, 12 microns of flexible crystalline silicon silicon of thickness are prepared for using chemical method is thinning
Piece.Flexible silicon chip is placed on hot evaporation instrument, the Al of 500nm is deposited with the back side of silicon chip.The silicon being deposited with
Piece is put into magnetron sputtering apparatus, and silicon temperature is brought up into 300 degree, and one layer is sputtered in the front of silicon chip
The ITO conductive layer of 250nm.Battery is to be successfully prepared, and it is 2.4% to measure efficiency.
Claims (3)
1. a kind of SIS/MIS structural flexibilities crystal silicon cell, including flexible silicon chip, passivation layer, transparency conducting layer,
Back electrode, it is characterised in that：Electrode structure order is back electrode, flexible silicon chip, passivation layer, transparent lead
Electric layer.
2. flexible crystalline silion cell as claimed in claim 1, it is characterised in that：Described flexible silicon chip can use machine
Tool method, chemical method, or mechanical means and chemical method are combined, crystalline silicon silicon is thinned to 20 micro-
Rice is following.
3. flexible crystalline silion cell as claimed in claim 1, it is characterised in that：Described passivation layer is general by nitrogen
SiClx film, silica membrane and amorphous silicon membrane are formed, and transparency conducting layer can be with some cases
Used directly as passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510786901.2A CN106711251A (en) | 2015-11-16 | 2015-11-16 | SIS/MIS structure flexible crystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510786901.2A CN106711251A (en) | 2015-11-16 | 2015-11-16 | SIS/MIS structure flexible crystalline silicon battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106711251A true CN106711251A (en) | 2017-05-24 |
Family
ID=58931045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510786901.2A Pending CN106711251A (en) | 2015-11-16 | 2015-11-16 | SIS/MIS structure flexible crystalline silicon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106711251A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444616A (en) * | 2018-05-04 | 2019-11-12 | 南京航空航天大学 | A kind of ultra-thin crystal silicon solar battery and preparation method thereof |
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|---|---|---|---|---|
| CN102034902A (en) * | 2010-11-03 | 2011-04-27 | 上海大学 | Method for preparing silicon-based SIS heterojunction photoelectric device |
| CN203134841U (en) * | 2012-08-28 | 2013-08-14 | 夏洋 | AZO-black silicon hetero-junction solar battery |
| CN103367513A (en) * | 2013-07-11 | 2013-10-23 | 湖南师范大学 | Polycrystalline silicon thin film solar cell and preparation method thereof |
| CN103489958A (en) * | 2013-08-27 | 2014-01-01 | 湖南红太阳光电科技有限公司 | Method for processing flexible silicon-based gallium arsenide battery |
| CN103943724A (en) * | 2014-04-17 | 2014-07-23 | 南京大学 | Flexible and efficient crystalline silicon solar cell and manufacturing method thereof |
| CN104022183A (en) * | 2014-05-30 | 2014-09-03 | 中国电子科技集团公司第四十八研究所 | Preparation method for ultrathin flexible crystalline silicon battery |
| CN104037245A (en) * | 2014-07-01 | 2014-09-10 | 中国科学院宁波材料技术与工程研究所 | Solar cell with negative-charge anti-reflection layer and manufacturing method thereof |
| CN104201234A (en) * | 2014-06-26 | 2014-12-10 | 余林蔚 | Flexible high-light-trapping-property radial-junction heterojunction efficient crystalline silicon solar cell and manufacturing method thereof |
| WO2015070250A1 (en) * | 2013-11-11 | 2015-05-14 | Solexel, Inc. | Dielectric-passivated metal insulator photovoltaic solar cells |
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-
2015
- 2015-11-16 CN CN201510786901.2A patent/CN106711251A/en active Pending
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|---|---|---|---|---|
| CN102034902A (en) * | 2010-11-03 | 2011-04-27 | 上海大学 | Method for preparing silicon-based SIS heterojunction photoelectric device |
| CN203134841U (en) * | 2012-08-28 | 2013-08-14 | 夏洋 | AZO-black silicon hetero-junction solar battery |
| CN103367513A (en) * | 2013-07-11 | 2013-10-23 | 湖南师范大学 | Polycrystalline silicon thin film solar cell and preparation method thereof |
| CN103489958A (en) * | 2013-08-27 | 2014-01-01 | 湖南红太阳光电科技有限公司 | Method for processing flexible silicon-based gallium arsenide battery |
| WO2015070250A1 (en) * | 2013-11-11 | 2015-05-14 | Solexel, Inc. | Dielectric-passivated metal insulator photovoltaic solar cells |
| CN103943724A (en) * | 2014-04-17 | 2014-07-23 | 南京大学 | Flexible and efficient crystalline silicon solar cell and manufacturing method thereof |
| CN104022183A (en) * | 2014-05-30 | 2014-09-03 | 中国电子科技集团公司第四十八研究所 | Preparation method for ultrathin flexible crystalline silicon battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444616A (en) * | 2018-05-04 | 2019-11-12 | 南京航空航天大学 | A kind of ultra-thin crystal silicon solar battery and preparation method thereof |
| CN110444616B (en) * | 2018-05-04 | 2022-12-09 | 南京航空航天大学 | Ultrathin crystal silicon solar cell and preparation method thereof |
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Application publication date: 20170524 |