CN103367514B - A kind of arcuate bottom electrode film solar cell - Google Patents
A kind of arcuate bottom electrode film solar cell Download PDFInfo
- Publication number
- CN103367514B CN103367514B CN201310335067.6A CN201310335067A CN103367514B CN 103367514 B CN103367514 B CN 103367514B CN 201310335067 A CN201310335067 A CN 201310335067A CN 103367514 B CN103367514 B CN 103367514B
- Authority
- CN
- China
- Prior art keywords
- film
- amorphous silicon
- electrode
- transparent conductive
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Arcuate bottom electrode film solar cell, comprise the metallic top electrode, transparent conductive film, P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, metallic bottom electrode, the substrate that connect successively from top to bottom, the upper surface of metallic bottom electrode has some metallic conduction fins, N-type amorphous silicon membrane above fin, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film have the strip bulge raised up, and metallic top electrode is arranged at the both sides of the strip bulge of transparent conductive film.The hearth electrode of battery of the present invention has arc or class arc fin, and this fin gos deep in film, improves the capacity gauge of electrode pair electric current; The arc bulge that on hearth electrode, the thin-film material of subsequent deposition is formed at fin correspondence position, adds the area of hull cell, adds the sensitive surface of battery; The bulge of film forms convex lens, incident light is had to the effect of convergence, improves battery to the absorption of light and utilization, improves the conversion efficiency of battery further.
Description
Technical field
The present invention relates to a kind of arcuate bottom electrode film solar cell, belong to technical field of solar batteries.
Background technology
Photon, electronics and phonon are all the carriers of energy.Solar cell is as photovoltaic energy conversion device, and mainly mutual positive energy exchange between photon and electronics, has phonon to participate in this exchange process simultaneously.The interaction of this energy mainly occurs in the scope on several microns, solar cell material surface, and this provides physical basis for manufacturing thin film solar cell.
Amorphous silicon film solar battery significantly can reduce the use amount of silicon, the advantages such as preparation technology's temperature is low because of it, becomes and reduces one of the most attractive silica-based solar cell of solar cell cost.But compared with other silica-based solar cell, the conversion efficiency of amorphous silicon film solar battery is on the low side.
In general, the method improving battery performance mainly contains: adopt multijunction structure, improves battery to the absorption of different wavelengths of light; Different battery materials is adopted to form hetero-junction solar cell; Adopt special-shaped substrate, improve battery to the absorption etc. of light.But these methods for the reduction of the preparation cost of battery and the raising of battery performance limited.Therefore, research and development novel thin film solar cell is to reduction battery cost, and improving battery performance has important meaning.
The electrode of usual thin film solar cell is all adopt the mode with film parallel.Membrane electrode prepared by which, preparation method is simple, stable performance, but the raising of the electrode pair battery performance of which is limited.Therefore, research novel thin film solar cel electrode, improving battery has important meaning to the absorption of light and increase battery light-receiving area.
The structure of the main flow thin-film solar cells that present people produce as shown in Figure 1, is respectively: dielectric substrate 5, transparent top electrode 1, P-type non-crystalline silicon film 2, intrinsic amorphous silicon film 6, N-type amorphous silicon membrane 3, hearth electrode 4 from top to down.P-type non-crystalline silicon film 2 and the superimposed connection of intrinsic amorphous silicon film 6, the superimposed connection again of intrinsic amorphous silicon film 6 and N-type amorphous silicon membrane 3, form a P-i-N knot, top electrode 1 and hearth electrode 4 are placed in P-type non-crystalline silicon film 2 upper surface and N-type amorphous silicon membrane 3 lower surface respectively, final formation single-node amorphous silicon thin-film solar cell.
Summary of the invention
The object of the invention is to: the defect overcoming above-mentioned prior art, propose a kind of arcuate bottom electrode film solar cell, battery has higher photoelectric conversion efficiency, and its production technology is simple.
In order to achieve the above object, a kind of arcuate bottom electrode film solar cell that the present invention proposes, it is characterized in that: comprise the metallic top electrode connected successively from top to bottom, transparent conductive film, P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, metallic bottom electrode, substrate, the upper surface of described metallic bottom electrode has some metallic conduction fins, N-type amorphous silicon membrane above described fin, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film has the strip bulge raised up, metallic top electrode is arranged at the both sides of the strip bulge of transparent conductive film.
Arcuate bottom electrode film solar cell of the present invention, further improves and is:
1, the thickness of described transparent conductive film, P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane is even.
2, described transparent conductive film is the ito thin film of tin-doped indium oxide, and described hearth electrode is the planar metal electrode that aluminium or ag material are made.
3, described fin is parallel to each other, and the spacing of adjacent lugs is 1-2um, and the width range of fin is: 200nm-900nm, and altitude range is: 100-300nm.
4, in described P-type non-crystalline silicon film, the doping content of boron element is 10
17~ 10
19/ cm
3; Free from admixture doping in described intrinsic amorphous silicon film, in described N-type amorphous silicon membrane, the doping content of P elements is 10
17~ 10
19/ cm
3the deposit thickness scope of described P-type non-crystalline silicon film is: 180-220nm, the deposit thickness scope of intrinsic amorphous silicon film is: 0.5-1um, and the deposit thickness scope of N-type amorphous silicon membrane is: 180-220nm, and the deposition thickness scope of described transparent conductive film is: 40-50nm.
5, described fin upper surface has the cambered surface of epirelief or described fin has low wide and up narrow stepped ramp type structure.
In addition, present invention also offers a kind of production technology of arcuate bottom electrode film solar cell, it is characterized in that comprising the steps:
1st step, prepare flat metallic bottom electrode on flexible substrates;
2nd step, at flat metallic bottom electrode surface preparation some strip metal conductions fin;
3rd step, hearth electrode surface be the uniform N-type amorphous silicon membrane of deposition thickness, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film successively, N-type amorphous silicon membrane, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film is raised up in described fin corresponding region and forms strip bulge;
4th step, prepare metallic top electrode in the both sides of the strip bulge of transparent conductive film.
The further improvement of the manufacturing process of arcuate bottom electrode film solar cell of the present invention is:
1, in described 2nd step, first deposit conduction fin, then made conduction fin melting under high temperature action of deposit by the method for short annealing, form the fin that upper surface is arc surfaced, short annealing temperature is 350-450 DEG C.
2, in described 2nd step, the method for repeatedly deposit is adopted to form low wide and up narrow stepped ramp type fin.
3, in described 1st step, the aluminium film or Ag films thus acquisition metallic bottom electrode that conduct electricity is formed by Magnetron Sputtered Al or silver in insulated substrate surface;
4, in the 3rd step, the deposit that described N-type amorphous silicon membrane, intrinsic amorphous silicon film and P-type non-crystalline silicon film all adopt plasma chemical enhancing vapour deposition instrument to carry out; The transparent conductive film of described tin-doped indium oxide is prepared by magnetron sputtering method.
5, in the 4th step, metallic top electrode is that the strip bulge both sides on transparent conductive film are formed by Magnetron Sputtered Al or silver.
Thin-film solar cells of the present invention is compared with existing thin-film solar cells, and the hearth electrode of battery has fin, and this fin gos deep in film, improves the capacity gauge of electrode pair electric current; The arc bulge that on hearth electrode, the thin-film material of subsequent deposition is formed at fin correspondence position, adds the area of hull cell, adds the sensitive surface of battery; The bulge of film forms convex lens, incident light is had to the effect of convergence, and that comparatively concentrates projects on hearth electrode, adds the utilization of battery to reverberation, thus improves battery to the absorption of light and utilization, improves the conversion efficiency of battery further.
The preparation technology of thin-film solar cells of the present invention and existing hull cell production technology compatibility, existing equipment can be utilized to produce, in preparation process, only add the secondary depositing step of fin (can be considered a part for hearth electrode), under the prerequisite additionally increasing cost hardly, improve battery performance.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Fig. 1 is existing thin-film solar cell structure schematic diagram.
Fig. 2 is arcuate bottom electrode film solar battery structure schematic diagram of the present invention.
Fig. 3 is the spectral response curve comparison diagram of battery of the present invention and conventional films battery.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
product embodiments
Be illustrated in figure 2 the present embodiment arcuate bottom electrode film solar cell, comprise the metallic top electrode 1 connected successively from top to bottom, transparent conductive film 8, P-type non-crystalline silicon film 2, intrinsic amorphous silicon film 6, N-type amorphous silicon membrane 3, metallic bottom electrode 4, substrate 5, the upper surface of metallic bottom electrode 4 has some metallic conduction fins 7, fin 7 upper surface has the cambered surface of epirelief (in addition, fin also can adopt low wide and up narrow stepped ramp type structure), only draw a fin in this example to illustrate, in fact many are had, N-type amorphous silicon membrane 3 above fin 7, intrinsic amorphous silicon film 6, P-type non-crystalline silicon film 2, transparent conductive film 8 has the strip bulge raised up, metallic top electrode 1 is arranged at the both sides of the strip bulge of transparent conductive film 8.The thickness of transparent conductive film 8, P-type non-crystalline silicon film 2, intrinsic amorphous silicon film 6, N-type amorphous silicon membrane 3 is even; Transparent conductive film 8 is the ito thin film of tin-doped indium oxide, the planar metal electrode that hearth electrode 4 is made for aluminium, and hearth electrode 4 also can be the planar metal electrode that silver is made; Some fin 7 is parallel to each other, and the spacing of adjacent lugs is about 1-2um, and the width of fin is: 540nm, is highly: 180nm.
In this example, in P-type non-crystalline silicon film, the doping content of boron element is 10
17~ 10
19/ cm
3; Free from admixture doping in intrinsic amorphous silicon film, in N-type amorphous silicon membrane, the doping content of P elements is 10
17~ 10
19/ cm
3, the deposit thickness of P-type non-crystalline silicon film is: 200nm, and the deposit thickness of intrinsic amorphous silicon film is: 0.75um, and the deposit thickness of N-type amorphous silicon membrane is: 220nm, and the deposition thickness of transparent conductive film is: 40-50nm.
The P-type non-crystalline silicon film 2 of battery, intrinsic amorphous silicon film 5, N-type amorphous silicon membrane 3 triplicity, form P-i-N knot, and light is irradiated to P-i-N knot surface and produces electron hole pair, and electronics moves to electrode under electric field action, makes battery produce electric energy.
The hearth electrode of battery of the present invention has fin structure, on hearth electrode after deposit silicon film and top electrode, define the bulge of arc, form convex lens, be beneficial to and the sunlight of incidence is converged, improve the utilization to light.The fin of conduction improves the area of hearth electrode, so the sensitive surface of battery is larger.Above two advantages, improve the photoelectric conversion efficiency of battery.
Spectral response l-G simulation test has been carried out to the present embodiment hull cell, and compare with conventional films battery, the result of this test refers to Fig. 3, the curve that side's point that in figure, color is darker is connected to form is battery spectral response curve of the present invention, and the curve that the more shallow round dot of color is connected to form is the spectral response curve of conventional films battery.
Experimental result shows, the spectral response variation tendency of two kinds of batteries is identical, is all that at 500-600nm wavelength, place reaches maximum along with the increase of wavelength first increases rear reduction.Battery of the present invention then strengthens all to some extent at the more common amorphous silicon thin-film solar cell of response intensity in whole solar spectrum district.
By finding out the integration of whole spectral response, the spectral response of battery of the present invention strengthens about 5% than common amorphous silicon thin-film solar cell.This is because the camber hearth electrode in battery of the present invention makes battery surface form bulge, increase battery light-receiving area, the structure of its similar convex lens can improve the absorption of battery to light.The hearth electrode of convex lens type can make light be reflected to the below of metallic top electrode, and improve battery to the absorption of light, therefore, under AM1.5 condition, the spectral response of all wave bands of emulation increases all to some extent, and effect is comparatively obvious.
process example
The production technology of the arcuate bottom electrode film solar cell of the embodiment of the present invention comprises the steps:
1st step, on substrate, prepare flat metallic bottom electrode;
In this step, formed the aluminium film of conduction on flexible insulating substrate surface by Magnetron Sputtered Al, obtain metallic bottom electrode.
2nd step, at flat metallic bottom electrode surface preparation some strip metal conductions fin;
In this step, first deposit conduction fin, then made conduction fin melting under high temperature action of deposit by the method for short annealing, form the fin that upper surface is arc surfaced, short annealing temperature is for being approximately 350-450 DEG C.In addition, the method for repeatedly deposit can also be adopted to form low wide and up narrow stepped ramp type fin.
3rd step, hearth electrode surface be the uniform N-type amorphous silicon membrane of deposition thickness, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film successively, N-type amorphous silicon membrane, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film is raised up in described fin corresponding region and forms strip bulge;
In this step, the deposit that described N-type amorphous silicon membrane, intrinsic amorphous silicon film and P-type non-crystalline silicon film all adopt plasma chemical enhancing vapour deposition instrument to carry out; The transparent conductive film of described tin-doped indium oxide is prepared by magnetron sputtering method.
4th step, prepare metallic top electrode in the both sides of the strip bulge of transparent conductive film by Magnetron Sputtered Al.
Visible, preparation technology of the present invention and existing hull cell production technology compatibility, can utilize existing equipment to produce, in preparation process, only add the secondary depositing step of fin, under the prerequisite additionally increasing cost hardly, improve battery performance.
In addition to the implementation, the present invention can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of application claims.
Claims (4)
1. an arcuate bottom electrode film solar cell, it is characterized in that: comprise the metallic top electrode, transparent conductive film, P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane, metallic bottom electrode, the substrate that connect successively from top to bottom, the upper surface of described metallic bottom electrode has some metallic conduction fins, N-type amorphous silicon membrane above described fin, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film have the strip bulge raised up, and metallic top electrode is arranged at the both sides of the strip bulge of transparent conductive film; Described fin is parallel to each other, and the spacing of adjacent lugs is 1-2um, and the width range of fin is: 200nm-900nm, and altitude range is: 100-300nm.
2. arcuate bottom electrode film solar cell according to claim 1, is characterized in that: the thickness of described transparent conductive film, P-type non-crystalline silicon film, intrinsic amorphous silicon film, N-type amorphous silicon membrane is even.
3. arcuate bottom electrode film solar cell according to claim 1, is characterized in that: described transparent conductive film is the ito thin film of tin-doped indium oxide, described hearth electrode is the planar metal electrode that aluminium or ag material are made.
4. the production technology of arcuate bottom electrode film solar cell described in claim 1, is characterized in that comprising the steps:
1st step, prepare flat metallic bottom electrode on flexible substrates;
2nd step, at flat metallic bottom electrode surface preparation some strip metal conductions fin;
3rd step, hearth electrode surface be the uniform N-type amorphous silicon membrane of deposition thickness, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film successively, N-type amorphous silicon membrane, intrinsic amorphous silicon film, P-type non-crystalline silicon film, transparent conductive film is raised up in described fin corresponding region and forms strip bulge;
4th step, prepare metallic top electrode in the both sides of the strip bulge of transparent conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310335067.6A CN103367514B (en) | 2013-08-02 | 2013-08-02 | A kind of arcuate bottom electrode film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310335067.6A CN103367514B (en) | 2013-08-02 | 2013-08-02 | A kind of arcuate bottom electrode film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103367514A CN103367514A (en) | 2013-10-23 |
| CN103367514B true CN103367514B (en) | 2015-12-09 |
Family
ID=49368461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310335067.6A Expired - Fee Related CN103367514B (en) | 2013-08-02 | 2013-08-02 | A kind of arcuate bottom electrode film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103367514B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409637B (en) * | 2014-11-20 | 2017-10-03 | 中国科学院半导体研究所 | Solar battery structure based on trapezoidal aluminium nanometer gate-shaped electrode and preparation method thereof |
| CN107863919A (en) * | 2015-11-10 | 2018-03-30 | 李聪 | A kind of portable solar generator |
| CN109216476A (en) * | 2017-07-07 | 2019-01-15 | 中国科学院大连化学物理研究所 | A kind of flexible silicon-based thin film solar battery and its preparation |
| CN108400197B (en) * | 2018-04-28 | 2020-03-17 | 厦门大学 | 4H-SiC ultraviolet photoelectric detector with spherical cap structure and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1218995A (en) * | 1997-10-29 | 1999-06-09 | 佳能株式会社 | Photoelectric element and module comprised of it |
| CN101300682A (en) * | 2005-11-10 | 2008-11-05 | 京瓷株式会社 | Photoelectric conversion device |
| CN202930402U (en) * | 2012-09-04 | 2013-05-08 | 周汉涛 | Novel solar panel |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090272422A1 (en) * | 2008-04-27 | 2009-11-05 | Delin Li | Solar Cell Design and Methods of Manufacture |
| JPWO2011074457A1 (en) * | 2009-12-15 | 2013-04-25 | ソニー株式会社 | Photoelectric conversion element and method for producing photoelectric conversion element |
-
2013
- 2013-08-02 CN CN201310335067.6A patent/CN103367514B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1218995A (en) * | 1997-10-29 | 1999-06-09 | 佳能株式会社 | Photoelectric element and module comprised of it |
| CN101300682A (en) * | 2005-11-10 | 2008-11-05 | 京瓷株式会社 | Photoelectric conversion device |
| CN202930402U (en) * | 2012-09-04 | 2013-05-08 | 周汉涛 | Novel solar panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103367514A (en) | 2013-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106601855A (en) | Preparation method of double-side power generation heterojunction solar cell | |
| CN106784041A (en) | A kind of silicon based hetero-junction solar cell and preparation method thereof | |
| CN208548372U (en) | A kind of double-junction solar battery | |
| CN106784040A (en) | A kind of CIGS based thin film solar cells and preparation method thereof | |
| CN102403376B (en) | n-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof | |
| CN102956723B (en) | A kind of solar cell and preparation method thereof | |
| CN103383975A (en) | Two-sided passivation efficient heterojunction battery and manufacturing method thereof | |
| CN103367514B (en) | A kind of arcuate bottom electrode film solar cell | |
| CN102214719B (en) | Back contact heterojunction solar battery based on N-type silicon slice | |
| CN107331713B (en) | A kind of solar battery | |
| CN107946382A (en) | Solar cell that MWT is combined with HIT and preparation method thereof | |
| CN108172640A (en) | A kind of cadmium telluride diaphragm solar battery of generating electricity on two sides and preparation method thereof | |
| CN102931268B (en) | N-type silicon substrate based back contact type HIT (Heterojunction with Intrinsic Thin layer) solar cell structure and preparation method thereof | |
| CN103400868A (en) | Novel double-layer-film back-passivated solar cell structure | |
| CN101393942B (en) | Polycrystalline-silicon carbide lamination thin-film solar cell | |
| US20170323986A1 (en) | Photovoltaic module | |
| CN107039554A (en) | A kind of cadmium telluride diaphragm solar battery and preparation method | |
| CN103943693B (en) | Manufacturing method of back contact-type solar cell structure based on P-type silicon substrate | |
| CN102280501B (en) | Silicon-based buried contact film solar cell | |
| CN202210522U (en) | Back contact heterojunction solar cell structure based on P-type silicon wafer | |
| CN102064212B (en) | Amorphous silicon film solar cell and preparation method thereof | |
| CN202977494U (en) | Crystalline silicon/amorphous silicon double-face double battery | |
| CN206878022U (en) | A kind of multi-crystal silicon film solar battery | |
| CN105895712A (en) | Crystalline silicon amorphous silicon layer-built cell and production method thereof | |
| CN104465803A (en) | Back emitter heterojunction solar cell and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Qiang Inventor after: Hua Guoran Inventor after: Huang Qianlu Inventor after: Deng Jie Inventor after: Guan Tuhua Inventor before: Hua Guoran Inventor before: Wang Qiang Inventor before: Deng Jie Inventor before: Guan Tuhua |
|
| COR | Change of bibliographic data | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151209 Termination date: 20160802 |