CN106694891A - Ball milling electric field pressure-assisted sintering remanufacturing method and device of titanium chips - Google Patents
Ball milling electric field pressure-assisted sintering remanufacturing method and device of titanium chips Download PDFInfo
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- CN106694891A CN106694891A CN201611021200.0A CN201611021200A CN106694891A CN 106694891 A CN106694891 A CN 106694891A CN 201611021200 A CN201611021200 A CN 201611021200A CN 106694891 A CN106694891 A CN 106694891A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F8/00—Manufacture of articles from scrap or waste metal particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
Abstract
The invention provides a ball milling electric field pressure-assisted sintering remanufacturing method and device of titanium chips. The ball milling electric field pressure-assisted sintering remanufacturing method comprises the steps of step (1), recycling and pretreatment of Ti chips; step (2) BM (ball milling) processing of Ti chips; and step (3) FAPAS (field-activated and pressure-assisted sintering) curing of BM-Ti chips. According to the ball milling electric field pressure-assisted sintering remanufacturing method, the BM technology and the FAPAS technology are combined, remanufacturing of waste chips is successfully implemented from second-grade Ti (ASTM Grade 2) chips, and a large-size blocky Ti material is prepared; through the BM-FAPAS remanufacturing technology, an ultrafine structure is prepared, oxide dispersion is achieved, and metallurgical defects are inhibited; the strength of the remanufactured Ti material is superior to that of a second-grade Ti commercial bar material on the similar oxygen content level, and the remanufactured Ti material has good isotropy; and the BM-FAPAS remanufacturing technology avoids high-temperature melting, is a low-cost, efficient and clean metal resource recycling treatment technology, and is particularly applicable to circulation and reutilization of high-smelting cost Ti resource.
Description
Technical field
The present invention is belonging to metal material processing field, is related to the solid phase Recycling and reuse of discarded metal resource, especially
It is directed to the titanium resource of smelting cost high, researches and develops a kind of titanium chip of high-efficiency cleaning and remanufacture new technology, more particularly to it is a kind of
Ball milling-electric field-pressure assisted sintering the reproducing method of discarded titanium chip.
Background technology
Electric field is excited and pressure assisted sintering (Field-activated and pressure-assisted
Sintering, abbreviation FAPAS) it is a kind of novel sintered technology for growing up in recent years.It utilizes Jiao that impulse electric field is produced
Have burning ears, and apply pressure, sintering and fine and close integration are realized in TRANSIENT HIGH TEMPERATURE.FAPAS technologies have homogeneous heating, heat up
Speed is fast, and sintering time is short, and the features such as production efficiency is high, the microcosmic uniform small grains of its product can effectively prepare high-compactness
Metal and its composite.Efficient, inexpensive preparation of the invention of FAPAS technologies for realizing material has important meaning
Justice, in the preparation of intermetallic compound, ceramics and composite, particularly with being synthesized and difficult for low heat release system
The more unique value of agglomerated material.Found by the literature search to prior art, Hu etc. exists《International
Journal ofRefractoryMetals and Hard Materials》Delivered on the 4th 470-477 pages of the phases of volume 29 in 2011
“Microstructure evolution and wearproperties ofbulk MoSi2fabricatedby field-
The texts of activated sintering (electric field excites sintering to prepare the Microstructure evolution and wearing character of block MoSi2) "
In, propose from pure Mo and Si powder stocks, it is by the pulse direct current electric field of 75kVA and solid under the pressure action of 30MPa
Change powder, the block MoSi2 materials of full densification are prepared by FAPAS techniques.The material has micro-scale crystal grain tissue and good
Good high-temperature wearable property.Meanwhile, Hu etc. exists《Journal ofAlloys and Compounds》1-2 of volume 468 in 2009
" Microstructures and densification of MoSi2-SiC composite by are delivered on 136-142 pages of phase
(electric field is excited and aided in pressure field-activated and pressure-assisted combustion synthesis
The microstructure of conbustion synthesis block MoSi2-SiC composites and densification) " text, with pure Mo, Si powder and ultra-fine C powder
End is raw material, is successfully prepared with full densification block MoSi2 based composites that SiC is the second phase by FAPAS technologies.
However, not yet finding to realize the report of discarded metal chip circulation and the related work for remanufacturing using FAPAS technologies at present.
At the same time, ball milling (Ball milling, abbreviation BM) is a kind of play for being widely used in and preparing superfine powdery material
Strong plastic deformation technology.Retrieval to prior art literature finds that Mahboubi Soufiani etc. exist《Materials and
Design》" Formation mechanism and characterization are delivered on 152-160 pages of volume 37 within 2012
(prepared by mechanical alloying for ofnanostructured Ti6Al4V alloy preparedby mechanical alloying
The Forming Mechanism and sign of Ti6Al4V alloy nanostructures) " text, report with the powder and micron of Ti, Al, V as raw material, by BM
Technology is synthetically prepared to have the Ti-6Al-4V alloy materials of nanoscale (being less than 100nm).Additionally, Zadra exists
《Materials Science and EngineeringA》" Mechanical is delivered on 105-113 pages of volume 583 within 2013
The texts of alloying oftitanium (mechanical alloying of titanium) ", Ti powder of the initial feed using average grain diameter less than 150 μm
End, first by BM treatment, obtains the pure Ti superfines less than 25 μm, and successfully obtain block by discharge plasma sintering
Ti materials, its oxygen content (mass percent)~0.25wt.%；Yield strength is more than 600MPa, actually possesses 4 grades of (ASTM
Grade4 strength level (500-600MPa)).
The conventional art of discarded metal chip circular treatment is remelting+casting.However, high temperature founding energy consumption is big, pollute weight,
Efficiency is low, and cast sturcture's coarse grains, and mechanical performance is poor.To avoid high temperature founding, solid-phase sintering mode can be used.But
It is that Ti is a kind of active metal for being easy to oxidation, its chip surface oxide exists in TiO2 forms, and its is strong but pliable in texture, if adopting
Directly process Ti chips with FAPAS technologies, remanufacture oxide in Ti materials cannot crush, disperse, oxide is continuously distributed by shape
Into the metallurgical imperfection in microstructure, weaken the mechanical performance of material.The technical problem is not yet solved well at present.
Therefore, we are necessary to improve such a structure, to overcome drawbacks described above.
The content of the invention
The circulation of discarded metal resource is with to remanufacture be one of the key of realizing sustainable development.Titanium (Ti) is that height is smelted into
This metals resources, its biocompatibility is excellent, corrosion resistance is good, mechanical property is suitable, be manufacture medicine equipment, joint prosthesis,
The important materials of large-scale derived energy chemical container etc..But, in order to manufacture high precision titanium structure, larger allowance need to be designed,
Substantial amounts of raw material translate into discarded chip.Traditional high temperature founding treatment energy consumption is big, pollution weight, and efficiency is low, and casting group
Knit coarse grains, poor-performing.Solid phase is circulated and remanufactured because avoiding high temperature founding, is to realize that metals resources are efficient, clean and follow
One effective way of ring.The purpose of the present invention, is the theory based on solid-phase sintering, researches and develops a kind of Ti for smelting cost high
The environmentally friendly BM-FAPAS re-manufacturing technologies of resource, prepare full densification, large-sized block Ti materials, realize discarded Ti
Efficient, the cleaning recycling of chip.
The present invention is for the solution technical scheme that is used of its technical problem：
Be efficiently, recovering and processing discarded Ti chips cleanly, the present invention propose BM-FAPAS technologies with prepare full densification,
Blocks of large Ti materials.Technical scheme is as follows：BM is combined with FAPAS techniques, its respective technical advantage is given full play to, it is real
Show the circulation of Ti chips and remanufacture.Specific operation includes：The pretreatment of Ti chip recyclings, Ti chip BM treatment and BM-Ti cut
The FAPAS solidifications of bits.
The specific implementation step of technical solution of the present invention：
A kind of ball milling electric field pressure assisted sintering reproducing method of titanium chip, comprises the following steps：
Step (1)-Ti chip recyclings are pre-processed：The chip generated with 2 grades of Ti of end mill (ASTM Grade 2) is as former material
Material, after collecting chip, using inductively coupled plasma atomic emission spectrum (Inductively coupledplasma
Atomic emission spectroscopy, abbreviation ICP-AES) its chemical composition (mass percent, wt.%) is analyzed, point
Analysis result is as follows：Initial Ti cuttings (mass percent, wt.%) O=0.15, N ＜ 0.01, C ＜ 0.01, Fe=0.10；By dividing
Analysis result understands that its chemical composition (oxygen content) meets ASTM standard scope through 2 grades of Ti chips of Milling Process；Meanwhile, use
99.9% ethanol cleans Ti chips in ultrasonic activation groove, to remove the greasy dirt in raw material and impurity etc.；
The BM processing of step (2)-Ti chips：Steel BM containers, chip and steel are inserted into the Ti chips obtained by step (1)
BallBetween mass ratio be 15:1；Meanwhile, the stearic acid of 1wt.% is added as process control agent, and by BM containers
Argon gas is filled with as protection atmosphere, to prevent chip over oxidation during BM；The rotating speed of planetary BM machines is 300rpm；
BM operation total durations are 15 hours；In BM runnings, Ti chips steel ball shock, rub with the hands stone roller issue raw food weldering, hardening and
It is broken；Processed by BM, the appearance and size and oxide on surface of Ti chips are able to significantly refine；Meanwhile, by external container
Liquid nitrogen circulation is passed to reduce the friction temperature of chip-steel ball, and machine often runs 1 hour and will suspend 12 minutes；BM terminates
Afterwards, the chemical composition of chip is analyzed using ICP-AES, analysis result is as follows：BM-Ti cuts (mass percent, wt.%) O=
0.17, N ＜ 0.01, C ＜ 0.22, Fe=0.64, from analysis result, through the Ti chips of BM processing under argon gas protection, its
Oxygen content only slightly rises (rising to 0.17wt.% by 0.15wt.%), and Fe contents rise to 0.64wt.% by 0.10wt.%；
The FAPAS solidifications of step (3)-BM-Ti chips：FAPAS curing process devices, baking oven is put into by BM-Ti chips,
Dried 30 minutes at a temperature of 60 DEG C, (its inwall pad is with graphite paper, mould then to insert the cylindrical shape FAPAS moulds that graphite is made
External diameterInternal diameterHeight 50mm)；The BM-Ti chips in mould are put into be colded pressing to produce pressure
Base；Mould containing pressed compact is put between the upper/lower electrode of FAPAS devices, agglomerating chamber is vacuumized into (residual pressure~5Pa),
Apply the uniaxial tension of 100kN by the upper low punch of mould by hydraulic system, and by the pulse of 15V, 5000A (75kVA)
Direct current (12ms is opened, 2ms is closed) is sintered to BM-Ti chips, and technical parameter is, 120 DEG C/min of the rate of heat addition, and sintering temperature~
800 DEG C, sintering time 20min；Sintering finishes rear sample natural cooling.
Further, described device includes, in the tubular graphite jig placed vertically, one being provided with inside the graphite jig
Cavity, the graphite jig upper and lower ends are equipped with moveable graphite drift, are all connected with outside the graphite drift of upper and lower ends
There is electrode, billet is provided between the electrode and graphite drift, electrode, graphite jig and graphite drift may be contained within vacuum chamber
Inside, upper end electrode top is provided with a load, and lower end electrode bottom is connected with hydraulic means, and electrode is supplied using pulse current
Electricity, titanium cutting is placed in and pressed compact is formed in cavity.
Further, the graphite jig inwall is lined with graphite paper.
The advantage of the invention is that：
First, the micron order for realizing Ti chip profile sizes by BM techniques is refined.Chip surface oxide (TiO2) exists
The collision of steel ball is rubbed with the hands and grinds lower fully broken disperse, and super fine organization is also formed inside chip.Then, quickly added by FAPAS techniques
Hot (120 DEG C/min), and carry out Fast Sintering (20min) at~800 DEG C, BM-Ti chips are cured as blocks of large material
Material.FAPAS is sintered compared to founding or conventional thermocompression, can effectively suppress grain coarsening, BM treatment is retained to the full extent and is obtained
The super fine organization for obtaining.Meanwhile, pressure (100kN) the effectively closed microscopic void of energy that FAPAS applies realizes the full densification of Ti materials
Change.The Ti chips of BM-FAPAS Combined Processings have super fine organization and good isotropism, and its intensity (~500MPa) is higher than 2
The yield strength (300-350MPa) of level Ti business bar (ASTM Grade2).
Be combined for BM and FAPAS techniques by the present invention, and from 2 grades of Ti (ASTM Grade 2) chip, successful implementation is given up
Remanufacturing for chip is abandoned, blocks of large Ti materials are prepared.Using BM-FAPAS re-manufacturing technologies, super fine organization is both prepared for,
Dispersed oxide is realized again, suppresses the formation of metallurgical imperfection.On similar oxygen content level, the intensity for remanufacturing Ti materials is excellent
In 2 grades of Ti business bars, and with good isotropism, BM-FAPAS re-manufacturing technologies of the invention avoid high temperature melting
Casting, is a kind of low cost, and the metals resources of high-efficiency cleaning recycle technology, are particularly well-suited to smelting cost Ti resources high
Recycling and reuse.
Brief description of the drawings
Fig. 1 is that a kind of ball milling electric field pressure assisted sintering of titanium chip proposed by the present invention remanufactures the structural representation of device
Figure.
Fig. 2 is that the present invention is cut using the initial Ti of ICP-AES technical Analysis, and BM treatment (BM-Ti) and BM-FAPAS make again
Make the chemical component table of (BM-FAPAS Ti) chip afterwards.
Numeral and the corresponding component title represented by letter in figure：
1st, graphite jig 2, cavity 3, graphite drift 4, electrode 5, billet 6, vacuum chamber 7, load 8, hydraulic pressure dress
Put 9, pulse current
Specific embodiment
In order that technological means, creation characteristic, reached purpose and effect that the present invention is realized are easy to understand, tie below
Diagram and specific embodiment are closed, the present invention is expanded on further.
As shown in figure 1, a kind of ball milling electric field pressure assisted sintering reproducing method of titanium chip proposed by the present invention, including
Following steps：
Step (1)-Ti chip recyclings are pre-processed：The chip generated with 2 grades of Ti of end mill (ASTM Grade 2) is as former material
Material, after collecting chip, using inductively coupled plasma atomic emission spectrum (Inductively coupledplasma
Atomic emission spectroscopy, abbreviation ICP-AES) its chemical composition (mass percent, wt.%) is analyzed, point
Analysis result is as follows：Initial Ti cuttings (mass percent, wt.%) O=0.15, N ＜ 0.01, C ＜ 0.01, Fe=0.10；By dividing
Analysis result understands that its chemical composition (oxygen content) meets ASTM standard scope through 2 grades of Ti chips of Milling Process；Meanwhile, use
99.9% ethanol cleans Ti chips in ultrasonic activation groove, to remove the greasy dirt in raw material and impurity etc.；
The BM processing of step (2)-Ti chips：Steel BM containers, chip and steel are inserted into the Ti chips obtained by step (1)
BallBetween mass ratio be 15:1；Meanwhile, the stearic acid of 1wt.% is added as process control agent, and by BM containers
Argon gas is filled with as protection atmosphere, to prevent chip over oxidation during BM；The rotating speed of planetary BM machines is 300rpm；
BM operation total durations are 15 hours；In BM runnings, Ti chips steel ball shock, rub with the hands stone roller issue raw food weldering, hardening and
It is broken；Processed by BM, the appearance and size and oxide on surface of Ti chips are able to significantly refine；Meanwhile, by external container
Liquid nitrogen circulation is passed to reduce the friction temperature of chip-steel ball, and machine often runs 1 hour and will suspend 12 minutes；BM terminates
Afterwards, the chemical composition of chip is analyzed using ICP-AES, analysis result is as follows：BM-Ti cuts (mass percent, wt.%) O=
0.17, N ＜ 0.01, C ＜ 0.22, Fe=0.64, from analysis result, through the Ti chips of BM processing under argon gas protection, its
Oxygen content only slightly rises (rising to 0.17wt.% by 0.15wt.%), and Fe contents rise to 0.64wt.% by 0.10wt.%；
The FAPAS solidifications of step (3)-BM-Ti chips：FAPAS curing process devices, baking oven is put into by BM-Ti chips,
Dried 30 minutes at a temperature of 60 DEG C, (its inwall pad is with graphite paper, mould then to insert the cylindrical shape FAPAS moulds that graphite is made
External diameterInternal diameterHeight 50mm)；The BM-Ti chips in mould are put into be colded pressing to produce pressure
Base；Mould containing pressed compact is put between the upper/lower electrode of FAPAS devices, agglomerating chamber is vacuumized into (residual pressure~5Pa),
Apply the uniaxial tension of 100kN by the upper low punch of mould by hydraulic system, and by the pulse of 15V, 5000A (75kVA)
Direct current (12ms is opened, 2ms is closed) is sintered to BM-Ti chips, and technical parameter is, 120 DEG C/min of the rate of heat addition, and sintering temperature~
800 DEG C, sintering time 20min；Sintering finishes rear sample natural cooling.
Further, described device includes, in the tubular graphite jig placed vertically, one being provided with inside the graphite jig
Cavity, the graphite jig upper and lower ends are equipped with moveable graphite drift, are all connected with outside the graphite drift of upper and lower ends
There is electrode, billet is provided between the electrode and graphite drift, electrode, graphite jig and graphite drift may be contained within vacuum chamber
Inside, upper end electrode top is provided with a load, and lower end electrode bottom is connected with hydraulic means, and electrode is supplied using pulse current
Electricity, titanium cutting is placed in and pressed compact is formed in cavity.
Further, the graphite jig inwall is lined with graphite paper.
The chemical composition of sintered specimen is analyzed using ICP-AES, its result is as follows：BM-ECAP Ti cuttings (by
0.15wt.% rises to 0.17wt.%) O=0.25, N ＜ 0.09, C ＜ 0.24, from analysis result, BM-FAPAS is remanufactured
The oxygen content of Ti materials rises to 0.25wt.% by the 0.15wt.% of original chip, still conforms to containing for 2 grades of Ti (ASTM Grade 2)
Oxygen amount, and N content by<0.01wt.% rises to 0.09wt.%.By wire cutting~4.00 × 4.00 × 6.00mm samples, and
Carry out compression experiment on universal testing machine, obtain yield strength~500MPa, i.e., in the level of approximate 2 grades of Ti oxygen content
On, obtain the yield strength (300-350MPa) higher than 2 grades of Ti business bars (ASTM Grade 2)
Novelty：The present invention implements solid cycle and remanufactures by reclaiming discarded titanium chip, so as to obtain block body ultrafine
Brilliant high intensity titanium.
It is creative：The present invention creatively electric field-pressure assisted sintering is combined with ball milling, be successfully applied to recovery,
The discarded titanium chip for the treatment of, is a kind of new solid cycle and reproducing method.
Practicality：Practical of the present invention, can efficiently remanufacture block titanium, functional.
General principle of the invention, principal character and advantages of the present invention has been shown and described above.The technology of the industry
Personnel it should be appreciated that the present invention is not limited to the above embodiments, simply explanation described in above-described embodiment and specification this
The principle of invention, various changes and modifications of the present invention are possible without departing from the spirit and scope of the present invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appending claims and its
Equivalent is defined.
Claims (3)
1. the ball milling electric field pressure assisted sintering reproducing method of a kind of titanium chip, it is characterised in that comprise the following steps：
Step (1)-Ti chip recyclings are pre-processed：The chip generated with 2 grades of Ti of end mill (ASTM Grade 2) is searched as raw material
After collection chip, using inductively coupled plasma atomic emission spectrum (Inductively coupled plasma atomic
Emission spectroscopy, abbreviation ICP-AES) its chemical composition (mass percent, wt.%) is analyzed, analysis result is such as
Under：Initial Ti cuttings (mass percent, wt.%) O=0.15, N ＜ 0.01, C ＜ 0.01, Fe=0.10；Can by analysis result
Know, through 2 grades of Ti chips of Milling Process, its chemical composition (oxygen content) meets ASTM standard scope；Meanwhile, using 99.9%
Ethanol cleans Ti chips in ultrasonic activation groove, to remove the greasy dirt in raw material and impurity etc.；
The BM processing of step (2)-Ti chips：Steel BM containers, chip and steel ball are inserted into the Ti chips obtained by step (1)Between mass ratio be 15:1；Meanwhile, the stearic acid of 1wt.% is added as process control agent, and BM containers are filled
Enter argon gas as protection atmosphere, to prevent chip over oxidation during BM；The rotating speed of planetary BM machines is 300rpm；BM
Operation total duration is 15 hours；In BM runnings, Ti chips steel ball shock, rub stone roller with the hands and issue raw food weldering, hardening and broken
It is broken；Processed by BM, the appearance and size and oxide on surface of Ti chips are able to significantly refine；Meanwhile, by logical in external container
With liquid nitrogen circulation to reduce the friction temperature of chip-steel ball, and machine often runs 1 hour and will suspend 12 minutes；After BM terminates,
The chemical composition of chip is analyzed using ICP-AES, analysis result is as follows：BM-Ti cuts (mass percent, wt.%) O=
0.17, N ＜ 0.01, C ＜ 0.22, Fe=0.64, from analysis result, through the Ti chips of BM processing under argon gas protection, its
Oxygen content only slightly rises (rising to 0.17wt.% by 0.15wt.%), and Fe contents rise to 0.64wt.% by 0.10wt.%；
The FAPAS solidifications of step (3)-BM-Ti chips：FAPAS curing process devices, baking oven is put into by BM-Ti chips, at 60 DEG C
At a temperature of dry 30 minutes, (its inwall pad is with graphite paper, mould external diameter then to insert the cylindrical shape FAPAS moulds that graphite is madeInternal diameterHeight 50mm)；The BM-Ti chips put into mould are colded pressing to produce pressed compact；Will
Mould containing pressed compact is put between the upper/lower electrode of FAPAS devices, and agglomerating chamber is vacuumized into (residual pressure~5Pa), is passed through
Hydraulic system is applied the uniaxial tension of 100kN by the upper low punch of mould, and by the pulse direct current of 15V, 5000A (75kVA)
(12ms is opened, 2ms is closed) is sintered to BM-Ti chips, and technical parameter is, 120 DEG C/min of the rate of heat addition, sintering temperature~800
DEG C, sintering time 20min；Sintering finishes rear sample natural cooling.
2. a kind of ball milling electric field pressure assisted sintering of titanium chip according to claim 1 remanufactures device, and its feature exists
In：Described device includes, in the tubular graphite jig placed vertically, a cavity, the graphite mo(u)ld being provided with inside the graphite jig
Tool upper and lower ends are equipped with moveable graphite drift, and electrode, the electrode are respectively connected with outside the graphite drift of upper and lower ends
Billet is provided between graphite drift, electrode, graphite jig and graphite drift may be contained within internal vacuum chamber, upper end electrode top
Portion is provided with a load, and lower end electrode bottom is connected with hydraulic means, and electrode is powered using pulse current, and titanium cutting is placed in chamber
Pressed compact is formed in vivo.
3. a kind of ball milling electric field pressure assisted sintering of titanium chip according to claim 1 remanufactures device, and its feature exists
In：The graphite jig inwall is lined with graphite paper.
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Cited By (5)
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|---|---|---|---|---|
| CN108034908A (en) * | 2018-01-15 | 2018-05-15 | 张磊 | High-volume fractional ceramic whisker strengthens the recycling technique of metal-base composites |
| CN109357528A (en) * | 2018-08-14 | 2019-02-19 | 长安大学 | A kind of ceramic material sintering furnace and its control method using electric field-assisted |
| CN110076342A (en) * | 2019-03-29 | 2019-08-02 | 太原理工大学 | A kind of high-frequency vibration auxiliary current activated sintering furnace |
| CN113523273A (en) * | 2021-06-17 | 2021-10-22 | 北京科技大学 | Powder metallurgy method for rapidly preparing ultrafine crystal pure tungsten material under multi-field coupling |
| CN114486988A (en) * | 2022-01-27 | 2022-05-13 | 东北大学 | Microwave mobile sintering lunar soil test device and test method under vacuum environment |
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