CN106684169A - Single-I-type high-current-resistant concentrating photovoltaic battery chip - Google Patents
Single-I-type high-current-resistant concentrating photovoltaic battery chip Download PDFInfo
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- CN106684169A CN106684169A CN201710132379.5A CN201710132379A CN106684169A CN 106684169 A CN106684169 A CN 106684169A CN 201710132379 A CN201710132379 A CN 201710132379A CN 106684169 A CN106684169 A CN 106684169A
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- photovoltaic battery
- electrode layer
- positive electrode
- condensation photovoltaic
- battery chip
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- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000005494 condensation Effects 0.000 claims description 39
- 238000009833 condensation Methods 0.000 claims description 39
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a single-I-type high-current-resistant concentrating photovoltaic battery chip belonging to the technical field of solar photovoltaic power generation. The single-I-type high-current-resistant concentrating photovoltaic battery chip comprises a negative electrode layer, a concentrating photovoltaic battery substrate layer, a positive electrode layer and an effective area, wherein the negative electrode layer covers one surface of the concentrating photovoltaic battery substrate layer, and the positive electrode layer covers the other surface of the concentrating photovoltaic battery substrate layer; and the part outside the negative electrode layer is the effective area. According to the single-I-type high-current-resistant concentrating photovoltaic battery chip, the use amount of the concentrating photovoltaic battery substrate material can be greatly reduced, so that the manufacturing cost of the concentrating photovoltaic battery chip can be reduced; and by increase of the length, the width and the thickness of the negative electrode section, the condition that after the amplification factor of a lens is increased, converged lights are converted into high-current electric energy and can be led out by the negative electrode section can be guaranteed.
Description
Technical field
The present invention relates to a kind of photovoltaic generation part, and in particular to a kind of resistance to high current Condensation photovoltaic battery chip of single I types,
Category solar photovoltaic technology field.
Background technology
Generally, the principal benefits sought by light gathering photovoltaic power generating system are on the effective area of Condensation photovoltaic battery chip
Obtain the high density sunlight converged from Fresnel Lenses.The multiple of lens is higher, and the density for obtaining sunlight is higher, identical faces
The Condensation photovoltaic battery chip used in product is fewer, and the cost of electricity-generating in unit area is lower.
It is all square generally to converge the focal spot for coming from Fresnel Lenses at present, and the shapes and sizes of the focal spot are also usual
It is consistent with the shapes and sizes of Condensation photovoltaic battery chip, so that Fresnel Lenses converges the focal spot for coming can converge completely
To on Condensation photovoltaic battery chip.But in actual applications, the positive electrode layer on Condensation photovoltaic battery chip is always less than poly-
Light photovoltaic cell substrate layer, due to the substrate material on Condensation photovoltaic battery substrate layer it is relatively expensive（One square centimeter size
Substrate material about at 50 yuans or so）, the thus significant wastage substrate material of Condensation photovoltaic battery substrate layer,
Simultaneously with the increase of lens multiple, the sunlight converged on Condensation photovoltaic battery chip is more, through condensation photovoltaic electricity
The electric energy that chamber chip is converted is more, and the increase of electric energy directly results in the increase of electric current, is thus easy to optically focused light
The negative pole of volt battery chip is damaged.
The content of the invention
It is an object of the invention to provide a kind of resistance to high current Condensation photovoltaic battery chip of single I types, the battery chip is gram
Take the deficiencies in the prior art.
In order to realize above-mentioned technical purpose, the present invention is adopted the technical scheme that：A kind of single I types condensation photovoltaic of resistance to high current
Battery chip, is characterized in that, it includes positive electrode layer, Condensation photovoltaic battery substrate layer, positive electrode layer and effective area, described poly-
Light photovoltaic cell base material is laminated to be covered with positive electrode layer, and another side is covered with positive electrode layer, and the part outside the positive electrode layer is
Effective area.
The positive electrode layer is smooth I glyph shapes, and the length of positive electrode layer is 1 ~ 2 millimeter, and width is 0.5 ~ 1.5 milli
Rice, thickness is 0.5 ~ 1 millimeter, and positive electrode layer and the one of end face of Condensation photovoltaic battery substrate layer are completely superposed.
The Condensation photovoltaic battery substrate layer is GaInP（Indium phosphide is transferred）/GaAs（GaAs）/Ge（Germanium）Three layers of combination
Body.
The positive electrode layer is a plane for fully sealing, positive electrode layer area shape and Condensation photovoltaic battery base material aspect
Product shape is just the same.
The effective area is square shape.
Advantages of the present invention and good effect are：1st, this kind of battery chip can greatly reduce Condensation photovoltaic battery base material material
The consumption of material, can thus reduce the cost of manufacture of Condensation photovoltaic battery chip；2nd, by length, the width of increase negative electrode section
And thickness, can guarantee that after the amplification of increase lens, converged light is converted to large-current electric and can pass through negative electrode
Section is derived to be come.
Description of the drawings
Fig. 1 is a kind of resistance to high current Condensation photovoltaic battery chip front view of single I types.
Fig. 2 is a kind of resistance to high current Condensation photovoltaic battery chip top view of single I types.
Wherein：1st, positive electrode layer, 2, Condensation photovoltaic battery substrate layer, 3, positive electrode layer, 4, effective area.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is further illustrated.
A kind of resistance to high current Condensation photovoltaic battery chip of single I types, as shown in Fig. 1~2, including positive electrode layer 1, condensation photovoltaic
Cell base layer 2, positive electrode layer 3 and effective area 4, the one side of Condensation photovoltaic battery substrate layer 2 is covered with positive electrode layer 1, separately
Positive electrode layer 3 is simultaneously covered with, the part outside the positive electrode layer 1 is effective area 4, and the positive electrode layer 1 is smooth I fonts
Shape, the length of positive electrode layer 1 is 1 ~ 2 millimeter, and width is 0.5 ~ 1.5 millimeter, and thickness is 0.2 ~ 1 millimeter, positive electrode layer 1 and poly-
The one of end face of light photovoltaic cell substrate layer 2 is completely superposed, and both can guarantee that high current passes through positive electrode layer 3 and bears much smootherly
Electrode layer 1 is guided, and also can guarantee that each electrode layer and connecting line can bear the rated current more than 50 amperes, while can also protect
Card welds well or binds the wire of 200um ~ 1mm, and wire the end of a thread will not enter into having for Condensation photovoltaic battery chip
In effect area, positive electrode layer and the one of end face of Condensation photovoltaic battery substrate layer are completely superposed, and thus make use of completely poly-
Light photovoltaic cell substrate layer, so as to reach the purpose for saving Condensation photovoltaic battery substrate layer substrate material.
In the present invention, used as becoming row embodiment, the positive and negative electrode layer of Condensation photovoltaic battery chip can also be exchanged setting
Customization is made, and positive electrode layer and Condensation photovoltaic battery substrate layer wherein any one end face are completely superposed, therefore the right of the present invention is protected
Shield scope is defined by the following claims.
Claims (5)
1. a kind of resistance to high current Condensation photovoltaic battery chip of single I types, is characterized in that, it includes positive electrode layer, Condensation photovoltaic battery
Substrate layer, positive electrode layer and effective area, the Condensation photovoltaic battery base material is laminated to be covered with positive electrode layer, and another side is covered with just
Electrode layer, the part outside the positive electrode layer is effective area.
2. a kind of resistance to high current Condensation photovoltaic battery chip of single I types according to claim 1, is characterized in that, the negative electricity
Pole layer is smooth I glyph shapes, and the length of positive electrode layer is 1 ~ 2 millimeter, and width is 0.5 ~ 1.5 millimeter, and thickness is 0.5 ~ 1 milli
Rice, positive electrode layer and the one of end face of Condensation photovoltaic battery substrate layer are completely superposed.
3. a kind of resistance to high current Condensation photovoltaic battery chip of single I types according to claim 1, is characterized in that, the optically focused
Photovoltaic cell substrate layer is GaInP（Indium phosphide is transferred）/GaAs（GaAs）/Ge（Germanium）Three layers of assembly.
4. a kind of resistance to high current Condensation photovoltaic battery chip of single I types according to claim 1, is characterized in that, the positive electricity
Pole layer is a plane for fully sealing, and positive electrode layer area shape and Condensation photovoltaic battery substrate layer area shape are just the same.
5. a kind of resistance to high current Condensation photovoltaic battery chip of single I types according to claim 1, is characterized in that, it is described effectively
Area is square shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710132379.5A CN106684169A (en) | 2017-03-07 | 2017-03-07 | Single-I-type high-current-resistant concentrating photovoltaic battery chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710132379.5A CN106684169A (en) | 2017-03-07 | 2017-03-07 | Single-I-type high-current-resistant concentrating photovoltaic battery chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106684169A true CN106684169A (en) | 2017-05-17 |
Family
ID=58828474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710132379.5A Pending CN106684169A (en) | 2017-03-07 | 2017-03-07 | Single-I-type high-current-resistant concentrating photovoltaic battery chip |
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| Country | Link |
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| CN (1) | CN106684169A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101119084A (en) * | 2006-08-03 | 2008-02-06 | 邓运明 | Solar energy light-collecting battery |
| CN103996723A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | High-current-resistant concentrator solar cell |
| CN103997289A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | High-efficiency concentrating solar battery chip |
| CN105428461A (en) * | 2015-12-18 | 2016-03-23 | 四川钟顺太阳能开发有限公司 | Production process for medium-low-power concentrator solar cell and solar cell piece |
-
2017
- 2017-03-07 CN CN201710132379.5A patent/CN106684169A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101119084A (en) * | 2006-08-03 | 2008-02-06 | 邓运明 | Solar energy light-collecting battery |
| CN103996723A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | High-current-resistant concentrator solar cell |
| CN103997289A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | High-efficiency concentrating solar battery chip |
| CN105428461A (en) * | 2015-12-18 | 2016-03-23 | 四川钟顺太阳能开发有限公司 | Production process for medium-low-power concentrator solar cell and solar cell piece |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170517 |
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| WD01 | Invention patent application deemed withdrawn after publication |