CN106684165A - 一种口段型聚光光伏电池芯片 - Google Patents

一种口段型聚光光伏电池芯片 Download PDF

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CN106684165A
CN106684165A CN201710125617.XA CN201710125617A CN106684165A CN 106684165 A CN106684165 A CN 106684165A CN 201710125617 A CN201710125617 A CN 201710125617A CN 106684165 A CN106684165 A CN 106684165A
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negative electrode
photovoltaic battery
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李利平
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CHENGDU POLYMERIZATION TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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Abstract

本发明涉及一种口段型聚光光伏电池芯片，属太阳能光伏发电技术领域，包括负电极段层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极段层，另一面覆上正电极层，所述负电极层之内的部分为有效面积，该种电池芯片能极大地减少聚光光伏电池基材材料的用量，这样就能减少聚光光伏电池芯片的制作成本；该电池芯片口字形形状负电极能迅速地将电流导出，减小电流对其他电池材料中离子的碰撞，能将电池芯片的转换效率整体提高，随着透镜聚光倍数的增高，增大电极段宽度的同时，通过调整电极为电极段，保持了受光面积的不变性，达到聚光光伏***整体的发电效率不减少，通过增大负电极段的宽度，能保证在增大透镜的放大倍数之后，汇聚光转换为大电流电能能顺利通过负电极段导出来。

Description

一种口段型聚光光伏电池芯片
技术领域
本发明涉及一种光伏发电部件，具体涉及一种口段型聚光光伏电池芯片，属太阳能光伏发电技术领域。
背景技术
通常，聚光光伏发电***所寻求的主要益处是在聚光光伏电池芯片的有效面积上得到从菲涅尔透镜汇聚的高密度太阳光。透镜的倍数越高，得到太阳光的密度越高，相同面积上使用的聚光光伏电池芯片越少，单位面积上的发电成本就越低。
目前通常从菲涅尔透镜汇聚过来的焦斑都为正方形，该焦斑的形状和大小也通常和聚光光伏电池芯片的形状和大小一致，从而使菲涅尔透镜汇聚过来的焦斑可以完全汇聚到聚光光伏电池芯片上。但是在实际应用中，聚光光伏电池芯片上的负电极层总是小于聚光光伏电池基材层，由于聚光光伏电池基材层上的基材材料相对很贵（一个平方厘米大小的基材材料大约在50元人民币左右），这样就极大浪费了聚光光伏电池基材层的基材材料；另外，由于负电极上的电流是通过电池材料中的离子通过碰撞而产生的，离子离负电极越远，电流到达负电极的损耗就越大，从而降低光电转换效率；另外，随着透镜倍数的增高，聚光光伏电池芯片受光面上的电极将会增大，这样就会减小聚光光伏电池芯片的有效受光面积，同时由于透镜的汇聚率不可能达到100%，在有效受光面外面（特别是在聚光光伏电池芯片的电极上的汇聚光）的汇聚光也不能转换为电，这样也会大大降低聚光光伏***的发电效率。
发明内容
本发明的目的是提供一种口段型聚光光伏电池芯片，该电池芯片在于克服现有技术的不足。
为了实现上述技术目的，本发明采取的技术方案是：一种口段型聚光光伏电池芯片，其特征是，它包括负电极段层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极段层，另一面覆上正电极层，所述负电极层之内的部分为有效面积。
所述负电极段层为一平整口字形形状，负电极段层和聚光光伏电池基材层端面完全重合。
所述聚光光伏电池基材层为GaInP（磷化铟嫁）/GaAs（砷化镓）/Ge（锗）三层组合体。
所述正电极层为一完全密封的平面，正电极层面积形状和聚光光伏电池基材层面积形状完全一样。
所述有效面积为正方形形状。
本发明的优点和积极效果是：1．该种电池芯片能极大地减少聚光光伏电池基材材料的用量，这样就能减少聚光光伏电池芯片的制作成本；2．该电池芯片口字形形状负电极能迅速地将电流导出，减小电流对其他电池材料中离子的碰撞，能将电池芯片的转换效率整体提高，3、随着透镜聚光倍数的增高，增大电极段宽度的同时，通过调整电极为电极段，保持了受光面积的不变性，达到聚光光伏***整体的发电效率不减少，4、通过增大负电极段的宽度，能保证在增大透镜的放大倍数之后，汇聚光转换为大电流电能能顺利通过负电极段导出来。
附图说明
图1为一种口段型聚光光伏电池芯片主视图。
图2为一种口段型聚光光伏电池芯片俯视图。
其中：1、负电极段层，2、聚光光伏电池基材层，3、正电极层，4、有效面积。
具体实施方式
下面结合附图对本发明作进一步的说明。
一种口段型聚光光伏电池芯片，如图1～2所示，包括负电极段层1，聚光光伏电池基材层2，正电极层3和有效面积4，所述聚光光伏电池基材层2一面覆上负电极段层1，另一面覆上正电极层3，所述负电极段层1之内的部分为有效面积4，所述负电极段层1为一平整口字形形状，可以迅速地将电流导出，减小电流对其他电池材料中离子的碰撞概率，从而提高转换效率，负电极段层1和聚光光伏电池基材层2端面完全重合，这样就完全利用了聚光光伏电池基材层，从而达到节约聚光光伏电池基材层基材材料的目的；另外增大负电极段的宽度，就能保证在增大透镜的放大倍数之后，汇聚光转换为大电流电能能顺利通过负电极段导出来，同时负电极段宽度的增大之外的有效面积和原负电极之外的有效面积不变，
本发明中，作为变行实施例，聚光光伏电池芯片的正电极层和负电极段层也可以交换过来设定制作，故本发明的权利保护范围以权利要求书限定的范围为准。

Claims (5)

1.一种口段型聚光光伏电池芯片，其特征是，它包括负电极段层，聚光光伏电池基材层，正电极层和有效面积，所述聚光光伏电池基材层一面覆上负电极段层，另一面覆上正电极层，所述负电极层之内的部分为有效面积。
2.根据权利要求1所述的一种口段型聚光光伏电池芯片，其特征是，所述负电极段层为一平整口字形形状，负电极段层和聚光光伏电池基材层端面完全重合。
3.根据权利要求1所述的一种口段型聚光光伏电池芯片，其特征是，所述聚光光伏电池基材层为GaInP（磷化铟嫁）/GaAs（砷化镓）/Ge（锗）三层组合体。
4.根据权利要求1所述的一种口段型聚光光伏电池芯片，其特征是，所述正电极层为一完全密封的平面，正电极层面积形状和聚光光伏电池基材层面积形状完全一样。
5.根据权利要求1所述的一种口段型聚光光伏电池芯片，其特征是，所述有效面积为正方形形状。
CN201710125617.XA 2017-03-04 2017-03-04 一种口段型聚光光伏电池芯片 Pending CN106684165A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100848451B1 (ko) * 2006-12-28 2008-07-28 이원근 와이어 모양의 태양전지 제작방법
CN103996722A (zh) * 2014-06-12 2014-08-20 成都聚合科技有限公司 一种增强型高效率聚光太阳能电池芯片
CN204011445U (zh) * 2014-06-11 2014-12-10 成都聚合科技有限公司 一种增强型聚光太阳能电池芯片

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100848451B1 (ko) * 2006-12-28 2008-07-28 이원근 와이어 모양의 태양전지 제작방법
CN204011445U (zh) * 2014-06-11 2014-12-10 成都聚合科技有限公司 一种增强型聚光太阳能电池芯片
CN103996722A (zh) * 2014-06-12 2014-08-20 成都聚合科技有限公司 一种增强型高效率聚光太阳能电池芯片

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