CN106664379B - 高动态范围像素和用于操作高动态范围像素的方法 - Google Patents
高动态范围像素和用于操作高动态范围像素的方法 Download PDFInfo
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- CN106664379B CN106664379B CN201580033612.3A CN201580033612A CN106664379B CN 106664379 B CN106664379 B CN 106664379B CN 201580033612 A CN201580033612 A CN 201580033612A CN 106664379 B CN106664379 B CN 106664379B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Optical Distance (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14176159.3A EP2966856B1 (en) | 2014-07-08 | 2014-07-08 | A high dynamic range pixel and a method for operating it |
EP14176159.3 | 2014-07-08 | ||
PCT/EP2015/065372 WO2016005332A1 (en) | 2014-07-08 | 2015-07-06 | A high dynamic range pixel and a method for operating it |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106664379A CN106664379A (zh) | 2017-05-10 |
CN106664379B true CN106664379B (zh) | 2020-05-19 |
Family
ID=51167691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580033612.3A Expired - Fee Related CN106664379B (zh) | 2014-07-08 | 2015-07-06 | 高动态范围像素和用于操作高动态范围像素的方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10498991B2 (zh) |
EP (1) | EP2966856B1 (zh) |
JP (1) | JP6596029B2 (zh) |
KR (1) | KR102332287B1 (zh) |
CN (1) | CN106664379B (zh) |
BE (1) | BE1021668B1 (zh) |
WO (1) | WO2016005332A1 (zh) |
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JPWO2018185587A1 (ja) * | 2017-04-03 | 2020-02-13 | 株式会社半導体エネルギー研究所 | 撮像装置および電子機器 |
JP2018186398A (ja) * | 2017-04-26 | 2018-11-22 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、および電子機器 |
US20190187256A1 (en) * | 2017-12-19 | 2019-06-20 | Samsung Electronics Co., Ltd. | Non-spad pixels for direct time-of-flight range measurement |
CN108282626B (zh) * | 2018-03-01 | 2021-04-23 | 思特威(上海)电子科技股份有限公司 | Tof图像传感器像素结构及tof成像*** |
US10559614B2 (en) * | 2018-03-09 | 2020-02-11 | Semiconductor Components Industries, Llc | Dual conversion gain circuitry with buried channels |
CN110412607B (zh) * | 2018-04-28 | 2021-12-03 | 思特威(上海)电子科技股份有限公司 | 具有高动态范围的tof像素电路及测距*** |
JP7134781B2 (ja) | 2018-08-17 | 2022-09-12 | キヤノン株式会社 | 光電変換装置及び撮像システム |
CN109194890B (zh) * | 2018-10-31 | 2020-12-08 | 锐芯微电子股份有限公司 | 图像传感器像素电路及其工作方法 |
JP7374586B2 (ja) * | 2019-01-17 | 2023-11-07 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
US11044429B2 (en) * | 2019-07-25 | 2021-06-22 | Omnivision Technologies, Inc. | Charge collection gate with central collection photodiode in time of flight pixel |
US11671720B2 (en) * | 2019-08-08 | 2023-06-06 | Microsoft Technology Licensing, Llc | HDR visible light imaging using TOF pixel |
KR20210050896A (ko) | 2019-10-29 | 2021-05-10 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
US11581345B2 (en) * | 2019-12-18 | 2023-02-14 | Stmicroelectronics (Crolles 2) Sas | Image sensor comprising, a pixel equipped with a MOS capacitive element, and corresponding control method |
GB2590645A (en) * | 2019-12-20 | 2021-07-07 | Teledyne Uk Ltd | Imaging device |
US10885843B1 (en) * | 2020-01-13 | 2021-01-05 | Sharp Kabushiki Kaisha | TFT pixel threshold voltage compensation circuit with a source follower |
KR20210102644A (ko) | 2020-02-12 | 2021-08-20 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 이미지 장치 |
JP7504623B2 (ja) | 2020-02-28 | 2024-06-24 | キヤノン株式会社 | 撮像装置および撮像システム |
KR20220021191A (ko) | 2020-08-13 | 2022-02-22 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
DE102020130884A1 (de) | 2020-11-23 | 2022-05-25 | Valeo Schalter Und Sensoren Gmbh | Aktives Sensorsystem und Objekterkennung |
KR20220158109A (ko) | 2021-05-20 | 2022-11-30 | 삼성전자주식회사 | 깊이 센서 및 그 동작 방법 |
US11658201B2 (en) * | 2021-08-25 | 2023-05-23 | Silead Inc. | Dual conversion gain image sensor pixels |
KR20230102081A (ko) * | 2021-12-30 | 2023-07-07 | 한국전자기술연구원 | 다양한 다이나믹 레인지 설정이 가능한 픽셀 및 이를 적용한 이미지 센서 |
WO2024076130A1 (ko) * | 2022-10-05 | 2024-04-11 | 삼성전자 주식회사 | 카메라를 포함하는 전자 장치 |
US11956557B1 (en) | 2022-10-17 | 2024-04-09 | BAE Systems Imaging Solutions Inc. | Pixel architecture with high dynamic range |
Citations (1)
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CN102752559A (zh) * | 2011-04-18 | 2012-10-24 | 原相科技股份有限公司 | 高动态范围影像感测电路及高动态范围影像读取方法 |
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WO2002095679A2 (en) * | 2001-05-23 | 2002-11-28 | Canesta, Inc. | Enhanced dynamic range conversion in 3-d imaging |
US6966940B2 (en) * | 2002-04-04 | 2005-11-22 | Donaldson Company, Inc. | Air filter cartridge |
US7078746B2 (en) * | 2003-07-15 | 2006-07-18 | Micron Technology, Inc. | Image sensor with floating diffusion gate capacitor |
FR2857966A1 (fr) * | 2003-07-24 | 2005-01-28 | Aventis Pharma Sa | Produits aryl-heteroaromatiques, compositions les contenant et utilisation |
US7160753B2 (en) | 2004-03-16 | 2007-01-09 | Voxtel, Inc. | Silicon-on-insulator active pixel sensors |
US7091531B2 (en) * | 2004-04-07 | 2006-08-15 | Micron Technology, Inc. | High dynamic range pixel amplifier |
JP5019705B2 (ja) * | 2004-11-17 | 2012-09-05 | ソニー株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
US20070000110A1 (en) * | 2005-06-29 | 2007-01-04 | Sae Magnetics (H.K.) Ltd. | Method for treating PZT element, PZT micro-actuator, head gimbal assembly and disk drive unit with treated PZT micro-actuator |
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JP2008305983A (ja) * | 2007-06-07 | 2008-12-18 | Nikon Corp | 固体撮像素子 |
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CN201508539U (zh) * | 2009-07-01 | 2010-06-16 | 牧东光电(苏州)有限公司 | 双模式电容触控面板 |
GB0918629D0 (en) * | 2009-10-23 | 2009-12-09 | Thermo Fisher Scient Bremen | Detection apparatus for detecting charged particles, methods for detecting charged particles and mass spectometer |
JP5791336B2 (ja) * | 2011-04-01 | 2015-10-07 | キヤノン株式会社 | 画像処理装置及びその制御方法 |
US9007441B2 (en) * | 2011-08-04 | 2015-04-14 | Semiconductor Components Industries, Llc | Method of depth-based imaging using an automatic trilateral filter for 3D stereo imagers |
US8576116B2 (en) * | 2011-10-20 | 2013-11-05 | Panasonic Corporation | High speed high resolution wide range low power analog correlator and radar sensor |
JP5948060B2 (ja) * | 2012-01-13 | 2016-07-06 | 株式会社日立製作所 | 暗号化データの高速な類似検索処理システム |
US8686367B2 (en) * | 2012-03-01 | 2014-04-01 | Omnivision Technologies, Inc. | Circuit configuration and method for time of flight sensor |
JP6006514B2 (ja) * | 2012-03-27 | 2016-10-12 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
US20140007838A1 (en) * | 2012-06-07 | 2014-01-09 | A Padle, Llc | Alternative fuel combustion engine enhancer |
US8988598B2 (en) | 2012-09-14 | 2015-03-24 | Samsung Electronics Co., Ltd. | Methods of controlling image sensors using modified rolling shutter methods to inhibit image over-saturation |
-
2014
- 2014-07-08 EP EP14176159.3A patent/EP2966856B1/en active Active
- 2014-10-27 BE BE2014/0786A patent/BE1021668B1/fr not_active IP Right Cessation
-
2015
- 2015-07-06 KR KR1020177000648A patent/KR102332287B1/ko active IP Right Grant
- 2015-07-06 CN CN201580033612.3A patent/CN106664379B/zh not_active Expired - Fee Related
- 2015-07-06 JP JP2016574401A patent/JP6596029B2/ja not_active Expired - Fee Related
- 2015-07-06 US US15/321,434 patent/US10498991B2/en active Active
- 2015-07-06 WO PCT/EP2015/065372 patent/WO2016005332A1/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102752559A (zh) * | 2011-04-18 | 2012-10-24 | 原相科技股份有限公司 | 高动态范围影像感测电路及高动态范围影像读取方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20170041187A (ko) | 2017-04-14 |
CN106664379A (zh) | 2017-05-10 |
BE1021668B1 (fr) | 2015-12-23 |
JP2017523688A (ja) | 2017-08-17 |
EP2966856B1 (en) | 2020-04-15 |
US10498991B2 (en) | 2019-12-03 |
KR102332287B1 (ko) | 2021-11-29 |
US20170214878A1 (en) | 2017-07-27 |
EP2966856A1 (en) | 2016-01-13 |
JP6596029B2 (ja) | 2019-10-23 |
WO2016005332A1 (en) | 2016-01-14 |
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