CN106654852A - Tunable laser based on graphene FP cavity - Google Patents
Tunable laser based on graphene FP cavity Download PDFInfo
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- CN106654852A CN106654852A CN201611178147.5A CN201611178147A CN106654852A CN 106654852 A CN106654852 A CN 106654852A CN 201611178147 A CN201611178147 A CN 201611178147A CN 106654852 A CN106654852 A CN 106654852A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a tunable laser based on a graphene FP cavity, which belongs to the technical field of optoelectronic devices and aims at solving the problems that the laser in the prior art is narrow in output wavelength range, the tuning speed is slow, the device structure is not compact and is hard to integrate. The tunable laser based on the graphene FP cavity comprises a substrate (1), a buffer layer (2), a lower optical packet layer (3), a lower barrier layer (4), an active layer (5), an upper barrier layer (8), an upper optical packet layer (9) and an ohmic contact layer (10) sequentially arranged from bottom to top, wherein a first grating (6) and a second grating (7) located at two sides of the active layer (5) are also arranged on the lower barrier layer (4); and the first grating (6) and the second grating (7) are tunable waveguide gratings adopting silicon waveguide-graphene.
Description
Technical field
The invention belongs to optoelectronic device technology field, and in particular to a kind of tunable laser based on Graphene FP chambers
Device.
Background technology
As the size of microelectronic component increasingly approaches its physics limit, it is intended to by photonic device and electronics device collection
Learn into silicon based opto-electronicses on silicon chip and be rapidly developed, it is desirable to using the aboundresources of silicon, refractive index is big, to communication
Wave band is transparent, good mechanical property, and various opto-electronic devices are made the features such as easy processing, solve existing various device costs compared with
It is high, it is difficult to the problems such as integrated.Wherein, although silicon is indirect band-gap semiconductor, luminous efficiency is relatively low, is not suitable for directly as luminous
Source, but due to the huge applications potentiality of silicon materials, people do not abandon the research to silicon substrate laser, it is currently reported into
The various methods of material gain grow III-V material on silicon, obtain high performance silicon substrate laser.The successful system of silicon substrate laser
It is standby that silicon materials application in the laser is made great progress, prepare laser instrument using silicon materials and will substantially reduce device
Cost, it is easy to the integrated of other devices, be conducive to the fast development of fiber optic communication.
Early stage tunable laser mainly uses exocoel optical grating construction, although the structure laser tuning range is wide,
Laser pulse line width, but exocoel optical grating construction needs rotation and moving grating in tuning wavelength so that and tuned speed is slow,
Complex operation, while the packaging cost for making laser instrument increases.
Graphene is the two-dimentional new material being made up of carbon atom, is the semiconductor of typical zero band gap, and it is surveyed to light wave and inhales
It is 2.3% to receive coefficient, and thermal conductivity factor reaches 5300w/m.K, higher than diamond and CNT, and electron mobility reaches under room temperature
To the 1/300 of the light velocity, resistivity only has 10-6Ω ㎝, it is lower than copper and silver-colored resistivity, it is the material of resistivity minimum in the world
Material, while an additional electric field on Graphene, thus it is possible to vary the real part and imaginary part of its refractive index, therefore can use Graphene
To in silicon-based devices, the silicon-based devices made stable performance, quick response and broadband light is acted on.
In order to improve the tuned speed of laser instrument, the cost of device is reduced, exocoel optical grating construction can be made as adjustable
Humorous grating, by the resonance wavelength for tuning exocoel grating, so as to change the output light wavelength of laser instrument.It is a kind of based on Graphene
Tunable silicon waveguide optical grating can be used to the exocoel optical grating construction as laser instrument, and the sectional view of this is tunable waveguide optical grating is as schemed
Shown in 2, upper and lower two layer graphene is laid in the ridge area of ridge silicon waveguide, the graphene layer 16 and 19 is made into interdigital electrode form
It is layered in the ridge area of silicon waveguide, Graphene is periodically distributed in the ridge area of ridge silicon waveguide, additional by upper/lower electrode 22
Electric field makes the effective refractive index of the waveguide optical grating with the change of extra electric field in periodically point regulating and controlling the refractive index of Graphene
Cloth, so as to form tunable waveguide optical grating.The structure is followed successively by from top to bottom substrate layer, silicon waveguide ridge area level, separation layer,
Graphene layer and electrode, general substrate layer material is silica, and insolated layer materials are Si oxide, silicon nitrogen oxides or boron nitrogen
Compound, graphene layer Graphene is single-layer graphene, and electrode material is gold, silver, platinum or copper.
The content of the invention
, in order to solve laser output wavelength narrow range present in prior art, tuned speed is slow, device junction for the present invention
Not the problems such as structure is not compact and is difficult to integrated.
To solve above-mentioned technical problem, the technical solution adopted in the present invention is：
A kind of tunable laser based on Graphene FP chambers, including the substrate, cushion for setting gradually from bottom to up, under
Light covering, lower barrierlayer, active layer, upper barrier layer, glazing covering and ohmic contact layer, are additionally provided with position respectively on lower barrierlayer
In first grating and the second grating of active layer both sides；
First grating and the second grating adopt the tunable waveguide optical grating of silicon waveguide-Graphene, the silicon waveguide-graphite
The tunable waveguide optical grating of alkene, including substrate, are provided with ridged silicon waveguide on the substrate, the waveguide of ridged silicon includes ridge area lower half
Partial waveguide and ridge area top half rectangular waveguide, ridged silicon waveguide is coated with covering, ridge area including the latter half waveguide of ridge area
Be disposed with from bottom to up in the waveguide of the latter half the first spacer medium layer, the first graphene layer, the 3rd spacer medium layer,
Two graphene layers, the 5th spacer medium layer, the 5th spacer medium floor arranges ridge area top half rectangular waveguide；
First graphene layer and the second graphene layer are interdigitated electrode structure, and are drawn by electrode, interdigital electrode knot
The interdigital equidistant cycle of structure is arranged.
In above-mentioned technical proposal, first grating and the second grating have identical resonance wavelength, first grating pair
The light of the resonance wavelength of the first grating and the second grating has highly reflective, and second grating is to the first grating and the second grating
Resonance wavelength there is part reflection characteristic.
In above-mentioned technical proposal, substrate is N-shaped doped silicon.
In above-mentioned technical proposal, the described tunable laser based on Graphene FP chambers, it is characterised in that the buffering
Layer material is indium phosphide (InP) or GaAs (GaAs).
In above-mentioned technical proposal, the described tunable laser based on Graphene FP chambers, it is characterised in that the glazing
Covering and lower smooth clad material are InGaAsP.
In above-mentioned technical proposal, the described tunable laser based on Graphene FP chambers, it is characterised in that the upper gesture
Barrier layer and lower barrierlayer material are InP, InGaAsP, InGaAs or GaAs.
In above-mentioned technical proposal, active layer material is InGaAs SQWs, InGaAs quantum dots or InGaAsP SQWs.
In above-mentioned technical proposal, Ohmic contact layer material is InGaP or GaAs.
In above-mentioned technical proposal, interdigital (15) of interdigitated electrode structure are along waveguide optical transmission direction period profile.
Compared with prior art, the invention has the advantages that：
1st, the present invention replaces the exocoel grating of tradition FP cavity lasers using the tunable silicon waveguide optical grating based on Graphene
Structure, can solve early stage FP cavity laser directly using the electric field being added on grating come the output wavelength of tuned laser
In tuning wavelength, exocoel optical grating construction needs the problem of rotation and moving grating, the packaging cost of device is reduced, while carrying
The high tuning speed of device, increases the scope of laser wavelength tuning.
2nd, a kind of tunable laser based on Graphene FP chambers that the present invention is provided, using growing III-V material on silicon
As the luminescent material of active area, be prepared into silicon substrate laser, at the same using silicon waveguide optical grating as laser instrument outer-cavity structure,
Be conducive to reducing the size of device and realize the integrated of device.
Description of the drawings
Fig. 1 is the lateral cross section schematic diagram of the tunable laser based on Graphene FP chambers of the present invention；
Mark in figure：1- substrates, 2- cushions, light covering under 3-, 4- lower barrierlayers, 5- active layers, the gratings of 6- first, 7-
Second grating, the upper barrier layers of 8-, 9- glazing coverings, 10- ohmic contact layers.
Fig. 2 be exocoel optical grating construction in Graphene FP chamber adjustable laser instruments-based on Graphene tunable silicon Waveguide
The transversal invention of grid based on graphite face schematic diagram；
Mark in figure：11- Grating substrates, 12- silicon waveguide core layer ridge areas lower half region, 13- coverings, the isolation of 15- first is situated between
Matter layer, 17- the second spacer medium layers, the spacer medium layers of 18- the 3rd, the spacer medium layers of 20- the 4th, the spacer medium layers of 21- the 5th,
The graphene layers of 16- first, the graphene layers of 19- second, 22- electrodes, 24- ridges area top half rectangular waveguide.
Specific embodiment
With reference to embodiment, the invention will be further described, and described embodiment is only a present invention part
Embodiment, is not whole embodiments.Based on the embodiment in the present invention, one of ordinary skill in the art is not making
Other embodiments used obtained under the premise of creative work, belong to protection scope of the present invention.
With reference to accompanying drawing, the tunable laser based on Graphene FP chambers of the present invention includes substrate 1, and the substrate is provided with
Cushion 2, the cushion is provided with lower smooth covering 3, and the lower smooth covering is provided with lower barrierlayer 4, on the lower barrierlayer
Active layer 5 is provided with, the active layer is provided with barrier layer 8, there is glazing covering 9, the glazing covering on the upper barrier layer
Ohmic contact layer 10 is provided with, on the lower barrierlayer and active layer both sides are provided with the first grating 6 and the second grating 7.
Exocoel optical grating construction in the tunable laser based on Graphene FP chambers of the present invention-adjustable based on Graphene
Humorous silicon wave-guide grating structure (the first grating 6 and the second grating 7) includes substrate 11, silicon waveguide ridge region, the covering 13 of waveguide,
Spacer medium layer (the first spacer medium layer 15, the second spacer medium layer 17, the 3rd spacer medium layer 18, the 4th spacer medium layer
20, the 5th spacer medium layer 21), graphene layer (the first graphene layer 16, the second graphene layer 19), electrode 22.
The grating 7 of first grating 6 and second be based on the tunable silicon waveguide optical grating of Graphene, it is described based on Graphene
The resonance wavelength of tunable silicon waveguide optical grating can change with the electric field change being added on the optical grating construction.
The grating 7 of first grating 6 and second has identical resonance wavelength, and first grating is to the first grating and second
The light of the resonance wavelength of grating has highly reflective, and second grating has to the resonance wavelength of the first grating and the second grating
Part reflection characteristic.
The substrate 1 is N-shaped doped silicon, and the material of the cushion 2 is indium phosphide (InP) or GaAs (GaAs), described
Glazing covering 9 and the lower material of smooth covering 3 are InGaAsP, the upper barrier layer 8 and the material of lower barrierlayer 4 be InP, InGaAsP,
InGaAs or GaAs, the material of the active layer 5 be InGaAs SQWs, InGaAs quantum dots or InGaAsP SQWs, the Europe
The material of nurse contact layer 10 is InGaP or GaAs.
The structure of first grating, 6 and second grating 7 includes the material of substrate 11 for silica, waveguide core layer 12,24
Material is silicon, spacer medium layer (the first spacer medium layer 15, the second spacer medium layer 17, the 3rd spacer medium layer 18, the 4th every
From dielectric layer 20, the 5th spacer medium layer 21) material is Si oxide, silicon nitrogen oxides or boron nitride, the material of electrode 22 is
Gold, silver, platinum or copper.
The operation principle of the tunable laser based on Graphene FP chambers of the present invention is：Active layer 5 is used as gain media
Optical cavity is collectively formed with the first grating 6 and the second grating 7, the first grating 6 and the second grating 7 have identical resonance wave
Long, the light of the resonance wavelength of first the first grating of 6 pairs, grating and the second grating has a highly reflective, second grating 7 pair the
The resonance wavelength of one grating and the second grating has part reflection characteristic.When the receiving electrode of ohmic contact layer 10 works, active layer 5
Light wave is produced in the presence of driving source, only consistent with grating resonance wavelength light wave could form humorous in optical cavity
Shake, and be amplified, ultimately form laser output.When the output wavelength of tuned laser is needed, by changing exocoel grating
The voltage being added in structure 6,7 on electrode 22, changes the first graphene layer 16, the refractive index of the second graphene layer 19, so as to change
Become the effective refractive index of optical grating construction, the final resonance wavelength for changing optical grating construction realizes the tuning of laser output wavelength.
For the operation principle of the tunable waveguide optical grating part of silicon waveguide-Graphene is：It is covered in silicon waveguide core layer ridge
First graphene layer 16 and the second graphene layer 19 in Xing Ji areas, by the extra electric field on electrode so that the refraction of Graphene
Rate changes with the change of extra electric field, so as in whole waveguide, make periodicity be coated with having for the waveguides sections of Graphene
Effect refractive index also changes with the change of electric field, and the refractive index of the partial waveguide covered without Graphene keeps constant, therefore
In waveguide along the direction of optical transport so that the effective refractive index of waveguide is in cyclically-varying with the change of extra electric field, is formed
Waveguide optical grating, and the resonance wavelength of waveguide optical grating is only relevant with the cycle of waveguide optical grating and effective refractive index, is not changing waveguide
Optical grating construction and on the premise of the cycle, the resonance wavelength of the waveguide optical grating changes with the change of electric field on Graphene is added to
Become, so as to form tunable waveguide optical grating.
Embodiment one
With reference to accompanying drawing 1, tunable laser substrate 1 material of the present embodiment based on Graphene FP chambers is N-shaped doped silicon, institute
State indium phosphide (InP) or GaAs (GaAs), the glazing covering 9 and the lower material of smooth covering 3 that the material of cushion 2 is 1-2 μ m-thicks
Expect for the InGaAsP of 0.15-0.3 μ m-thicks, the upper barrier layer 8 and the material of lower barrierlayer 4 are the InP of 1-2 μ m-thicks, InGaAsP,
InGaAs or GaAs, the material of the active layer 5 is InGaAs SQWs, InGaAs quantum dots or the InGaAsP of 0.1-0.2 μ m-thicks
SQW, the material of the ohmic contact layer 10 is the InGaP or GaAs of 0.15-0.3 μ m-thicks.
With reference to accompanying drawing 2, during the present embodiment is based on the tunable laser optical grating construction 6,7 in Graphene FP chambers, substrate 11
Material is silica, and the ridge sector width that sandwich layer ridge waveguide is arranged in silicon dioxide substrates is 0.6 μm, a height of 0.25 μ of ridge
M, the graphene layer 16 and 19 is single-layer graphene, and spacer medium layer is the hexagonal boron nitride that thickness is 5nm
(hBN), the material of electrode 22 is gold, silver, platinum or copper.
Tunable silicon waveguide optical grating by the use of Graphene of the invention is easy to laser wave as the exocoel optical grating construction of laser instrument
Long direct turning, and tuning range is wider, tuned speed is higher, while having adapted to the fast development of silicon micromachining technology, has
Beneficial to the size for reducing device, it is easy to integrated with various silicon-based devices.
Claims (9)
1. a kind of tunable laser based on Graphene FP chambers, it is characterised in that：Including the substrate for setting gradually from bottom to up
(1), cushion (2), lower smooth covering (3), lower barrierlayer (4), active layer (5), upper barrier layer (8), glazing covering (9) and ohm
Contact layer (10), is additionally provided with respectively positioned at first grating (6) and the second grating of active layer (5) both sides on lower barrierlayer (4)
(7)；
First grating (6) and the second grating (7) using silicon waveguide-Graphene tunable waveguide optical grating, the silicon waveguide-stone
The tunable waveguide optical grating of black alkene, including Grating substrate (11), on the Grating substrate (11) ridged silicon waveguide, ridged are provided with
Silicon waveguide includes ridge area the latter half waveguide (12) and ridge area top half rectangular waveguide (24), ridge area the latter half waveguide (12)
Be coated with covering (13), be disposed with from bottom to up in ridge area the latter half waveguide (12) the first spacer medium floor (15),
One graphene layer (16), the 3rd spacer medium layer (18), the second graphene layer (19), the 5th spacer medium layer (21), the 5th every
Ridge area's top half rectangular waveguide (24) is set on dielectric layer (21)；
First graphene layer (16) is interdigitated electrode structure with the second graphene layer (19), and is drawn by electrode, interdigital electricity
Equidistantly the cycle is arranged for interdigital (23) of pole structure.
2. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that first grating
(6) and the second grating (7) has identical resonance wavelength, first grating (6) is to the first grating and the resonance wave of the second grating
Long light has highly reflective, and second grating (7) there is part to reflect the resonance wavelength of the first grating and the second grating
Characteristic.
3. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that the substrate (1)
For N-shaped doped silicon.
4. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that the cushion
(2) material is indium phosphide or GaAs.
5. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that the glazing covering
(9) and lower smooth covering (3) material be InGaAsP.
6. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that the upper barrier layer
(8) and lower barrierlayer (4) material be InP, InGaAsP, InGaAs or GaAs.
7. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that the active layer
(5) material is InGaAs SQWs, InGaAs quantum dots or InGaAsP SQWs.
8. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that the Ohmic contact
Layer (10) material is InGaP or GaAs.
9. the tunable laser based on Graphene FP chambers according to claim 1, it is characterised in that interdigitated electrode structure
Interdigital (23) along waveguide optical transmission direction period profile.
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| CN201611178147.5A CN106654852A (en) | 2016-12-19 | 2016-12-19 | Tunable laser based on graphene FP cavity |
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Cited By (4)
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| CN110715726A (en) * | 2018-07-12 | 2020-01-21 | ***通信集团设计院有限公司 | Visible light detection device and method |
| CN111273462A (en) * | 2020-03-02 | 2020-06-12 | 江西师范大学 | Wave absorber with optical cavity and graphene composite structure |
| CN112152081A (en) * | 2020-11-26 | 2020-12-29 | 武汉敏芯半导体股份有限公司 | Hybrid integrated resonant cavity laser and preparation method thereof |
| CN113120889A (en) * | 2020-01-16 | 2021-07-16 | 北京大学 | Method for improving third harmonic of graphene material |
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Cited By (7)
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| CN110715726A (en) * | 2018-07-12 | 2020-01-21 | ***通信集团设计院有限公司 | Visible light detection device and method |
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| CN111273462A (en) * | 2020-03-02 | 2020-06-12 | 江西师范大学 | Wave absorber with optical cavity and graphene composite structure |
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Application publication date: 20170510 |