CN206362960U - A kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt - Google Patents
A kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt Download PDFInfo
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- CN206362960U CN206362960U CN201621450316.1U CN201621450316U CN206362960U CN 206362960 U CN206362960 U CN 206362960U CN 201621450316 U CN201621450316 U CN 201621450316U CN 206362960 U CN206362960 U CN 206362960U
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Abstract
The utility model discloses a kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt, it is characterized in that, bottom graphene layer, gallium arsenide layer, covering and the top layer graphene layer spliced including order, described covering is provided with the air gap, the side of the air gap is provided with graphene nanobelt, and opposite side is symmetrically provided with cadmium sulfide nano wires.This device is easy to be integrated with a variety of nano-photons, electronic device, has wide practical use in fields such as light sensing, optic communications, and this device can provide antetype device for the development of nano laser of new generation.
Description
Technical field
The utility model is related to technical field of photo communication, is specifically that one kind is based on cadmium sulfide nano wires and graphene nanobelt
SPP transmission devices.
Background technology
Surface plasma excimer (Surface plasmon polaritons, abbreviation SPP) is by changing metal watch
Electromagnet mode between a kind of light wave and transportable surface charge of the sub-wavelength structure realization in face, can support metal and medium circle
The surface plasma-wave of face transmission, so that light energy is transmitted, and it is not limited by diffraction limit.The ripple being made based on SPP principles
It is one of the primary study object in micronano optical field to lead.However, during the characteristic of research surface plasma waveguide, unavoidably
A challenge be transmission loss or transmission range problem.For some type of surface plasmon waveguide structure, in light field
There is a kind of contradictory relation between limitation capability and transmission loss, had a strong impact on the performance of waveguide.In recent years, researcher from
Nano wire angle overcomes contradiction to propose the mixing SPP waveguides of many different structures.《Nature Photonics 》In 2008
The spp devices of Oulton team development are published on 496-500 pages of the phase of volume 2 the 8th, they are using the one layer low folding of plating on flat layer
Rate dielectric film is penetrated, a high refractive index medium nano wire is placed, superpower nanoscale light field constraint and low-loss has as a result been reached
Transmission, and the SPP lasers of sub-wavelength dimensions are experimentally realized using the structure.Just because of what SPP was combined with nano wire
Peculiar property, makes it manipulate light energy in nanometer scale and plays an important role.Graphene can propagate spp characteristics by
The graphene nanobelt theoretical proof wrapped up by quantum dot of one endless.
The Thomas Mueller team of Austria Vienna technology university was in 2013《Nature Photonics 》
The o. 11ths of volume 7 deliver and made a kind of bandwidth range and reach the detection of 1310-1650nm running frequency several hundred million Hz graphenes light
Device, it enumerates all bandwidth ranges that current Fiber Optical Communication System is used, 8 times faster than existing photodetector of response speed with
On.The studies above achievement presents infusive potentiality of the graphene in terms of opto-electronic device.Unique photoelectricity of graphene
The utilizability of attribute and existing ic manufacturing technology causes graphene to be possible to replace Ge element and compound half quickly
Position of the conductor in high performance device.But graphene is at present also in development at present, various countries are for this emerging material
Material and corresponding device are also in a patent distribution phase.
Reported at present for the coefficient SPP transmission devices of cadmium sulfide nano wires and graphene nanobelt considerably less.
Utility model content
The purpose of this utility model is in view of the shortcomings of the prior art, and to provide and a kind of be based on cadmium sulfide nano wires and graphite
The SPP transmission devices of alkene nanobelt.This device is easy to be integrated with a variety of nano-photons, electronic device, leads in light sensing, light
The fields such as letter have wide practical use, and this device can provide antetype device for the development of nano laser of new generation.
Realizing the technical scheme of the utility model purpose is：
A kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt, including the bottom stone that order is spliced
Black alkene layer, gallium arsenide layer, covering and top layer graphene layer, described covering are provided with the air gap, and the side of the air gap is provided with
Graphene nanobelt, opposite side is symmetrically provided with cadmium sulfide nano wires.
The covering is the magnesium fluoride layer of low-refraction, can play the low-loss effect of drop.
The cadmium sulfide nano wires are high index of refraction cadmium sulfide nano wires.
The graphene nanobelt, cadmium sulfide nano wires have relatively low gain threshold, larger for air gap width
When, its gain threshold can drop very low, more the nano laser beneficial to Low threshold.
The effect of the air gap is, in order to realize lower transmission loss, can to produce electric capacity enhancement effect, by light
Major limitation is at the air gap, so as to realize height localization enhancement effect and energy constraint.
The cadmium sulfide nano wires told, are prepared using solid state chemical reaction method.
Described bottom graphene layer and top layer graphene layer are made by plasma etch process, can be by changing
The thickness of graphene adjusts SPP resonant frequency.
Incident light from the side of magnesium fluoride layer with the angle diffraction that is totally reflected more than graphene and medium to waveguide, then bottom
Layer graphene layer and top layer graphene layer do not realize that SPP is propagated with the interface that connects, and are received when incident light is further diffracted into graphene
Rice band and cadmium sulfide nano wires region, will realize overlapping between SPP mode and nanometer ray mode and couple, and make between air
Electric field at gap is greatly enhanced, and because the gain compensation of gallium arsenide semiconductor material, can be realized in air-gap areas
Very strong photon localization phenomenon.
This device excites SPP using light, by the coupling of double nano line, the air gap electric capacity enhancement effect, low
Refractive index buffer reduction loss and gallium arsenide semiconductor material realize gain compensation, can realize very strong photon localization
Phenomenon, and the nano laser of Low threshold is easily realized, the semi-conducting material of use can be with a variety of nano-photons, electronic device
It is compatible.
This device is easy to be integrated with a variety of nano-photons, electronic device, has extensively in fields such as light sensing, optic communications
Application prospect, this device can provide antetype device for the development of nano laser of new generation.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment.
In figure, the top layer graphene of 1. bottom graphene layer, 2. gallium arsenide layer, 3. covering 4. 5. graphene nanobelt of layer
6. the incident light of 7. cadmium sulfide nano wires of the air gap 8..
Embodiment
The utility model content is further elaborated with reference to the accompanying drawings and examples, but is not that the utility model is limited
It is fixed.
Embodiment：
Reference picture 1, a kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt, including order are spliced
Bottom graphene layer 1, gallium arsenide layer 2, covering 3 and top layer graphene layer 4, described covering 3 is provided with the air gap 6, air
The side in gap 6 is provided with graphene nanobelt 5, and opposite side is symmetrically provided with cadmium sulfide nano wires 7.
The covering 3 is the magnesium fluoride layer of low-refraction, can play the low-loss effect of drop.
The cadmium sulfide nano wires 7 are high index of refraction cadmium sulfide nano wires.
The graphene nanobelt 5, cadmium sulfide nano wires 7 have relatively low gain threshold, for the width of the air gap 6 compared with
When big, its gain threshold can drop very low, more the nano laser beneficial to Low threshold.
The effect of the air gap 6 is, in order to realize lower transmission loss, can to produce electric capacity enhancement effect, by light
Major limitation is at the air gap, so as to realize height localization enhancement effect and energy constraint.
The cadmium sulfide nano wires 7 told, are prepared using solid state chemical reaction method.
Described bottom graphene layer 1 and top layer graphene layer 4 are made by plasma etch process, can be by changing
The thickness for becoming graphene adjusts SPP resonant frequency.、
Incident light 8 from the side of magnesium fluoride layer with the angle diffraction that is totally reflected more than graphene and medium to waveguide, then
Bottom graphene layer 1 and top layer graphene layer 4 do not realize that SPP is propagated with the interface that connects, when incident light 8 is further diffracted into graphite
Alkene nanobelt 5 and the region of cadmium sulfide nano wires 7, will realize overlapping between SPP mode and nanometer ray mode and couple, make
Electric field at the air gap 6 is greatly enhanced, and because the gain compensation of gallium arsenide semiconductor material, can be in the air gap 6
Realize very strong photon localization phenomenon in region.
Claims (2)
1. a kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt, it is characterized in that, including sequentially splice
Bottom graphene layer, gallium arsenide layer, covering and top layer graphene layer, described covering are provided with the air gap, the one of the air gap
Side is provided with graphene nanobelt, and opposite side is symmetrically provided with cadmium sulfide nano wires.
2. the SPP transmission devices according to claim 1 based on cadmium sulfide nano wires and graphene nanobelt, its feature
It is that the covering is the magnesium fluoride layer of low-refraction.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621450316.1U CN206362960U (en) | 2016-12-28 | 2016-12-28 | A kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621450316.1U CN206362960U (en) | 2016-12-28 | 2016-12-28 | A kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt |
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| CN206362960U true CN206362960U (en) | 2017-07-28 |
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| CN201621450316.1U Expired - Fee Related CN206362960U (en) | 2016-12-28 | 2016-12-28 | A kind of SPP transmission devices based on cadmium sulfide nano wires and graphene nanobelt |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526724A (en) * | 2016-12-28 | 2017-03-22 | 广西师范大学 | SPP propagation device based on cadmium sulfide nanowire and graphene nanobelt |
| CN109004508A (en) * | 2018-07-03 | 2018-12-14 | 北京邮电大学 | A kind of single-photon source based on quantum dot |
-
2016
- 2016-12-28 CN CN201621450316.1U patent/CN206362960U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106526724A (en) * | 2016-12-28 | 2017-03-22 | 广西师范大学 | SPP propagation device based on cadmium sulfide nanowire and graphene nanobelt |
| CN109004508A (en) * | 2018-07-03 | 2018-12-14 | 北京邮电大学 | A kind of single-photon source based on quantum dot |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170728 Termination date: 20171228 |