CN106654068B - A kind of production method and related device of organic electroluminescence device - Google Patents
A kind of production method and related device of organic electroluminescence device Download PDFInfo
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- CN106654068B CN106654068B CN201710049227.9A CN201710049227A CN106654068B CN 106654068 B CN106654068 B CN 106654068B CN 201710049227 A CN201710049227 A CN 201710049227A CN 106654068 B CN106654068 B CN 106654068B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Abstract
The present invention relates to a kind of production method of organic electroluminescence device and related devices, to solve the problems, such as that quantum dot device is easy that self-quenching phenomenon occurs because of reunion in current quantum dot display device.This method includes：Anode, hole injection layer and hole transmission layer are formed on substrate；The quantum dot solution that a flood includes organic semiconducting materials is coated on the hole transport layer；The quantum dot solution of coating is toasted, makes the group on quantum dot nucleocapsid that polymerisation occur with organic semiconducting materials, forms solid quantum dot light emitting layer；Hole blocking layer, electron transfer layer, electron injecting layer and cathode are sequentially formed on quantum dot light emitting layer.The machine semi-conducting material that polymerisation occurs with the group on quantum dot nucleocapsid is added in quantum dot solution, thus in baking, quantum dot can be uniformly fixed on inside luminescent layer by polymerizeing, to reduce the quenching phenomenon generated by quantum dot reunion, improves luminous efficiency, prolongs the service life.
Description
Technical field
The present invention relates to display base plate technical field more particularly to the production methods and phase of a kind of organic electroluminescence device
Answer device.
Background technology
Light emitting diode with quantum dots display device is based on the one kind to grow up on the basis of organic light-emitting display device
Novel display technology, unlike, electroluminescence layer is using quantum dot layer.Existing light emitting diode with quantum dots is shown
The light emitting structure of device includes anode, hole injection layer, hole transmission layer, quantum dot light emitting layer, hole blocking layer, electron-transport
Layer, electron injecting layer and cathode.Compared with common organic light-emitting diode display, quanta point electroluminescent have photopeak it is wide,
The advantages that color saturation is high, colour gamut is wide.
Currently, light emitting diode with quantum dots display device still remains some problems, due between nano-particle and solvent
Interaction and the volatilization of solvent molecule quantum dot can be caused to reunite, while the reunion of quantum dot is also by quantum dot layer
The influence of thickness, it is more thick more be easy to happen reunion, energy transfer can occur after reunion, energy is lost in the form of other,
To make quantum dot that self-quenching phenomenon occur, quantum dot device efficiency is caused to decline, service life shortens.
In conclusion quantum dot device is easy to occur to quench certainly because of reunion in light emitting diode with quantum dots display device at present
Going out, phenomenon, light efficiency be low, short life.
Invention content
The production method and related device of a kind of organic electroluminescence device provided in an embodiment of the present invention, to solve mesh
Quantum dot device is easy to occur because of reunion that self-quenching phenomenon, light efficiency be low, the service life in preceding light emitting diode with quantum dots display device
Short problem.
A kind of production method of organic electroluminescence device provided in an embodiment of the present invention, including：
Anode, hole injection layer and hole transmission layer are formed on substrate；
The quantum dot solution that a flood includes organic semiconducting materials is coated on the hole transport layer；
The quantum dot solution of coating is toasted, the group on quantum dot nucleocapsid and the organic semiconductor material are made
Polymerisation occurs for material, forms the solid quantum dot light emitting layer of a flood；
Hole blocking layer, electron transfer layer, electron injecting layer and cathode are sequentially formed on the quantum dot light emitting layer.
The method provided in an embodiment of the present invention for making organic electroluminescence device, being added in quantum dot solution can
The machine semi-conducting material of polymerisation occurs with the group on quantum dot nucleocapsid, thus to being coated on hole transmission layer
Quantum dot solution when being toasted, quantum dot can be uniformly fixed in quantum dot light emitting layer by way of polymerization
It improves luminous efficiency to reduce the quenching phenomenon generated by quantum dot reunion, prolong the service life in portion.
Preferably, containing one or more polymerizable groups in the organic semiconducting materials；
The polymerizable group includes one or more of following groups：
Alkenyl or diene functional groups, alkynyl or diine functional group, sulfydryl, amino.
Preferably, the quantum dot solution further includes：It can dissolve the organic solvent of the organic semiconducting materials, Yi Jiyin
Send out agent.
Preferably, the organic solvent is the organic solvent or alcohols solvent of aromatics；
The organic solvent includes one or more in following solvent：
Methyl benzoate, methyl phenyl ethers anisole or cyclohexyl benzene.
Preferably, the mass percent of quantum dot described in the quantum dot solution is 1%-20%；It is described organic partly to lead
The mass percent of body material is 10%-30%；The mass percent of the initiator is 0.1%-0.5%；It is remaining for institute
State organic solvent.
Preferably, coating quantum dot solution by following method：
Spin-coating method, inkjet printing, slot coated or bar shaped coating.
Preferably, the temperature of the baking is not higher than 150 DEG C；The time of the baking is no more than 60min.
A kind of organic electroluminescence device provided in an embodiment of the present invention, including：The anode being successively set on substrate, it is empty
Cave implanted layer, hole transmission layer, quantum dot light emitting layer, hole blocking layer, electron transfer layer, electron injecting layer and cathode；
Wherein, the quantum dot light emitting layer is polymerize by the group on quantum dot nucleocapsid with organic semiconducting materials
Reaction is formed.
Preferably, the distance between each adjacent quantum dot in the quantum dot light emitting layer is the 3-10 of lateral size of dots
Times.
A kind of display device provided in an embodiment of the present invention, the display device include provided in an embodiment of the present invention above-mentioned
Any organic electroluminescence device.
Description of the drawings
Fig. 1 is a kind of step flow chart of the production method of organic electroluminescence device provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of organic electroluminescence device provided in an embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiment is only a part of the embodiment of the present invention, and is not whole embodiment.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
Wherein, film thickness and region shape do not reflect that its actual proportions, purpose are the schematically illustrate present invention in attached drawing
Content.
A kind of organic electroluminescence device provided in an embodiment of the present invention is the base in existing organic electroluminescence device
On plinth, the improvement to quantum dot light emitting layer.The present invention added in quantum dot solution can on quantum dot nucleocapsid
The machine semi-conducting material of polymerisation occurs for group, thus is toasted to the quantum dot solution being coated on hole transmission layer
When, quantum dot can be uniformly fixed on to the inside of quantum dot light emitting layer by way of polymerization.
Due in current light emitting diode with quantum dots display device quantum dot device be easy self-quenching occurs because of reunion it is existing
As, light efficiency is low, short life, thus the embodiment of the present invention first describes a kind of production method of organic electroluminescence device, then has
The structure for the organic electroluminescence device that body introduction is made of this method.Its specific production method is carried out first below detailed
Explanation.
As shown in Figure 1, the step of being a kind of production method of organic electroluminescence device provided in an embodiment of the present invention, flows
Following steps realization specifically may be used in Cheng Tu：
Step 101, anode, hole injection layer and hole transmission layer are formed on substrate；
Step 102, the quantum dot solution that a flood includes organic semiconducting materials is coated on the hole transport layer；
Step 103, the quantum dot solution of coating is toasted, the group on quantum dot nucleocapsid is made partly to be led with organic
Polymerisation occurs for body material, forms the solid quantum dot light emitting layer of a flood；
Step 104, hole blocking layer, electron transfer layer, electron injecting layer and the moon are sequentially formed on quantum dot light emitting layer
Pole.
Currently, occurring to quench certainly because of reunion since quantum dot device is easy in current light emitting diode with quantum dots display device
Going out, phenomenon, light efficiency be low, short life.
Based on this, the production method of above-mentioned organic electroluminescence device provided in an embodiment of the present invention, in quantum dot solution
In add the machine semi-conducting material that polymerisation can occur with the group on quantum dot nucleocapsid, thus to being coated to
When quantum dot solution on hole transmission layer is toasted, quantum dot can be uniformly fixed on quantum dot by way of polymerization
It improves luminous efficiency to reduce the quenching phenomenon generated by quantum dot reunion, prolong the service life in the inside of luminescent layer.
In the specific implementation, the production method of organic electroluminescence device provided in an embodiment of the present invention, can be by appointing
Meaning mode makes anode and cathode, does not limit herein.The embodiment of the present invention is mainly that the making to quantum dot light emitting layer walks
Suddenly it is improved.
Specifically, when executing step 102, hole transmission layer is formed on substrate and then is applied on the hole transport layer
Cover the quantum dot solution that a flood includes organic semiconducting materials；The mode of specific coating quantum dot solution, can be according to reality
Border is selected, preferably, coating quantum dot solution by following method：Spin-coating method, inkjet printing, slot coated or item
Shape is coated with.
Wherein, with the group on quantum dot nucleocapsid polymerisation, specific material can occur for organic semiconducting materials
Material, can be chosen according to actual needs.Preferably, containing one or more polymerizable bases in organic semiconducting materials
Group；Polymerizable group includes one or more of following groups：Alkenyl or diene functional groups, alkynyl or diine functional group,
Sulfydryl, amino.
Further, when executing step 103, after having coated quantum dot solution on the hole transport layer, to coating
Quantum dot solution is toasted, so that with organic semiconducting materials polymerisation, mesh occur for the group on quantum dot nucleocapsid
Be the position for fixing quantum dot, form the solid quantum dot light emitting layer of a flood, prevent quantum dot reunite shine be quenched it is existing
As.When being toasted, the temperature and time of baking can be grasped according to actual needs, and the temperature of baking is generally not more than 200 DEG C；
Preferably, the temperature of baking is not higher than 150 DEG C；The time of baking is no more than 60min.
In the specific implementation, as shown in Fig. 2, being a kind of structure of organic electroluminescence device provided in an embodiment of the present invention
Schematic diagram, the organic electroluminescence device that the embodiment of the present invention makes are empty in addition to the anode 202 including being arranged on substrate 201
Cave implanted layer 203, hole transmission layer 204, quantum dot light emitting layer 205, hole blocking layer 206, electron transfer layer 207, electronics note
Enter layer 208 and cathode 209.And other than quantum dot light emitting layer, the specific production method of other film layers does not limit herein.
In the specific implementation, for making in the quantum dot solution of quantum dot light emitting layer, in addition to including quantum dot and organic
Outside semi-conducting material, preferably, quantum dot solution further includes：The organic solvent of organic semiconducting materials is can dissolve, and is caused
Agent.
Wherein, organic solvent can dissolve organic semiconducting materials, but cannot dissolve other film layers being in contact with it, compared with
Good, organic solvent is the organic solvent or alcohols solvent of aromatics；Organic solvent includes one or more in following solvent：
Methyl benzoate, methyl phenyl ethers anisole or cyclohexyl benzene.
In order to preferably make the group on the quantum dot nucleocapsid in quantum dot solution occur with organic semiconducting materials
Polymerisation needs the ratio for controlling organic semiconducting materials and quantum dot in quantum dot solution, makes in quantum dot light emitting layer
The distance between each adjacent quantum dot is 3-10 times of lateral size of dots.Preferably, in quantum dot solution quantum dot quality
Percentage is 1%-20%；The mass percent of organic semiconducting materials is 10%-30%；The mass percent of initiator is
0.1%-0.5%；Remaining is organic solvent.
Specifically, including organic semiconducting materials, organic solvent, amount when preparing quantum dot solution, in quantum dot solution
Son point and initiator etc., which is using preceding mixing 2-5h, range of speeds 200-500rpmin.
In the specific implementation, the quantum dot used in the quantum dot solution that the embodiment of the present invention uses, with nucleocapsid knot
The organo-functional group of structure, nucleocapsid includes alkenyl or diene functional groups, alkynyl or diine functional group, sulfydryl, amino etc.；Quantum
The material of point includes CdS, CdSe, CdTe, ZnS, ZnTe, HgSe, InAs, AlAs, AlP, and one in AlSb, GaP and GaAs etc.
Kind is a variety of；And the diameter of quantum dot is generally 1nm-10nm.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of organic electroluminescence hair made by the above method
Optical device, the principle solved the problems, such as due to the organic electroluminescence device and organic electroluminescence provided in an embodiment of the present invention
The production method of part is similar, therefore the implementation of the organic electroluminescence device may refer to the implementation of method, repeats place no longer
It repeats.
As shown in Fig. 2, organic electroluminescence device provided in an embodiment of the present invention includes：It is successively set on substrate 201
Anode 202, hole injection layer 203, hole transmission layer 204, quantum dot light emitting layer 205, hole blocking layer 206, electron-transport
Layer 207, electron injecting layer 208 and cathode 209；Wherein, quantum dot light emitting layer 205 by quantum dot nucleocapsid group with have
Machine semi-conducting material occurs polymerisation and is formed.
In the specific implementation, preferably, by control organic semiconducting materials and quantum dot substance ratio, quantum dot send out
The distance between each adjacent quantum dot in photosphere is 3-10 times of lateral size of dots, can prevent quantum dot reunion and oneself
Quenching phenomenon obtains higher quantum efficiency.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of display device, which includes this hair
Any of the above-described organic electroluminescence device that bright embodiment provides.The principle and the present invention solved the problems, such as due to the display device is real
The organic electroluminescence device for applying example offer is similar, therefore the implementation of the display device may refer to organic electroluminescence device
Implement, overlaps will not be repeated.
In conclusion the method provided in an embodiment of the present invention for making organic electroluminescence device, in quantum dot solution
The machine semi-conducting material of polymerisation can be occurred with the group on quantum dot nucleocapsid by adding, thus to the quantum
When point solution is toasted, quantum dot can be uniformly fixed on to the inside of quantum dot light emitting layer by way of polymerization, to
The quenching phenomenon generated by quantum dot reunion is reduced, luminous efficiency is improved, prolongs the service life.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (9)
1. a kind of production method of organic electroluminescence device, which is characterized in that including：
Anode, hole injection layer and hole transmission layer are formed on substrate；
The quantum dot solution that a flood includes organic semiconducting materials is coated on the hole transport layer；
The quantum dot solution of coating is toasted, the group on quantum dot nucleocapsid is made to be sent out with the organic semiconducting materials
Raw polymerisation, forms the solid quantum dot light emitting layer of a flood；
Hole blocking layer, electron transfer layer, electron injecting layer and cathode are sequentially formed on the quantum dot light emitting layer；
The distance between each adjacent quantum dot in the quantum dot light emitting layer is 3-10 times of lateral size of dots.
2. the method as described in claim 1, which is characterized in that can gather comprising one or more in the organic semiconducting materials
The group of conjunction；
The polymerizable group includes one or more of following groups：
Alkenyl or diene functional groups, alkynyl or diine functional group, sulfydryl, amino.
3. the method as described in claim 1, which is characterized in that the quantum dot solution further includes：It can dissolve described organic half
The organic solvent and initiator of conductor material.
4. method as claimed in claim 3, which is characterized in that the organic solvent is molten for the organic solvent or alcohols of aromatics
Agent；
The organic solvent includes one or more in following solvent：
Methyl benzoate, methyl phenyl ethers anisole or cyclohexyl benzene.
5. method as claimed in claim 3, which is characterized in that the mass percent of quantum dot described in the quantum dot solution
For 1%-20%；The mass percent of the organic semiconducting materials is 10%-30%；The mass percent of the initiator is
0.1%-0.5%；Remaining solution is organic solvent.
6. the method as described in claim 1, which is characterized in that coat quantum dot solution by following method：
Spin-coating method, inkjet printing, slot coated or bar shaped coating.
7. the method as described in claim 1, which is characterized in that the temperature of the baking is not higher than 150 DEG C；The baking when
Between be no more than 60min.
8. a kind of organic electroluminescence device, which is characterized in that including：The anode being successively set on substrate, hole injection layer,
Hole transmission layer, quantum dot light emitting layer, hole blocking layer, electron transfer layer, electron injecting layer and cathode；
Wherein, by the group on quantum dot nucleocapsid with organic semiconducting materials polymerisation occurs for the quantum dot light emitting layer
It is formed；
The distance between each adjacent quantum dot in the quantum dot light emitting layer is 3-10 times of lateral size of dots.
9. a kind of display device, which is characterized in that the display device includes organic electroluminescence as claimed in claim 8
Part.
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| KR102554285B1 (en) * | 2017-02-03 | 2023-07-10 | 동우 화인켐 주식회사 | Quantum Dot Dispersion, Self Emission Type Photosensitive Resin Composition, Color Filter and Display Device |
| CN109980096B (en) * | 2017-12-27 | 2020-09-11 | Tcl科技集团股份有限公司 | QLED device and preparation method thereof |
| CN110600625B (en) * | 2019-08-26 | 2020-12-08 | 深圳市华星光电半导体显示技术有限公司 | Light-emitting device and preparation method thereof |
| CN111952474B (en) * | 2020-08-18 | 2023-11-03 | 福州大学 | Quantum dot light emitting diode based on organic matter polymerization and preparation method thereof |
| US11877461B2 (en) * | 2020-08-20 | 2024-01-16 | Boe Technology Group Co., Ltd. | Light emitting diode device, display panel, display device, and manufacturing method |
| CN114171693B (en) * | 2021-11-30 | 2024-04-16 | 北京京东方技术开发有限公司 | Quantum dot light-emitting substrate, preparation method thereof and display device |
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| CN102903855A (en) * | 2012-10-22 | 2013-01-30 | 东南大学 | Quantum dot electroluminescent device and preparation method thereof |
| CN103293745A (en) * | 2013-05-17 | 2013-09-11 | 北京京东方光电科技有限公司 | Liquid crystal display screen, display device and preparation method of single-color quantum dot layers |
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| JP4578131B2 (en) * | 2003-03-31 | 2010-11-10 | 三洋電機株式会社 | COMPOUND FOR LIGHT EMITTING ELEMENT AND ORGANIC LIGHT EMITTING ELEMENT USING THE SAME |
| KR101462901B1 (en) * | 2012-11-29 | 2014-11-20 | 성균관대학교산학협력단 | Light emtting device using graphene quantum dot and organic light emitting device including the same |
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|---|---|---|---|---|
| CN102903855A (en) * | 2012-10-22 | 2013-01-30 | 东南大学 | Quantum dot electroluminescent device and preparation method thereof |
| CN103293745A (en) * | 2013-05-17 | 2013-09-11 | 北京京东方光电科技有限公司 | Liquid crystal display screen, display device and preparation method of single-color quantum dot layers |
| CN106032468A (en) * | 2015-12-31 | 2016-10-19 | 苏州星烁纳米科技有限公司 | Polymerizable quantum dot and application thereof |
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