CN106654064B - A kind of preparation method and applications of top emission OLED device refraction passivation layer - Google Patents
A kind of preparation method and applications of top emission OLED device refraction passivation layer Download PDFInfo
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- CN106654064B CN106654064B CN201611241725.5A CN201611241725A CN106654064B CN 106654064 B CN106654064 B CN 106654064B CN 201611241725 A CN201611241725 A CN 201611241725A CN 106654064 B CN106654064 B CN 106654064B
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- oled device
- top emission
- array substrate
- passivation layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
Abstract
The present invention provides a kind of preparation methods of top emission OLED device refraction passivation layer, it include: Step 1: providing array substrate, it is coated with one layer of optical bond in array substrate upper surface, by the optical bond by forming film after baking-curing, the film is removed and obtains lens blooming；Step 2: preparing buffer layer in the upper surface of the lens blooming；Step 3: preparing passivation film in the buffer layer upper surface, the passivation film is removed up to top emission OLED device and reflects passivation layer.Top emitting provided by the invention reflects passivation layer, is pasted onto the top of device, and the changeable angle of total reflection protects cathode simultaneously, plays the role of completely cutting off water oxygen.
Description
Technical field
The invention belongs to field of electronic display, be related to a kind of top emission OLED device refraction passivation layer preparation method and its
Using.
Background technique
In current illumination and display field, due to Organic Light Emitting Diode (OLED) have low start voltage, it is frivolous,
The features such as self-luminous, receives more and more attention, and is widely studied for developing in illuminating product and panel industry, to reach
To low energy consumption, frivolous and area source purpose.
OLED's is luminous main by the compound of exciton, is then emitted in air from luminescent layer.General bottom emitting
OLED illuminating device, the path of light outgoing are as follows: luminescent layer-anode-substrate-air, light need just arrive by four steps
Up to air incidence to the eyes of people.The light extraction efficiency of top emitting device is higher than bottom emitting, but since cathode generally uses ITO/
Ag/ITO structure, wherein the refractive index of ITO is higher than air, it may occur that the phenomenon that total reflection causes some light that cannot be emitted to sky
In gas, the loss of luminous efficiency is caused.
Device generally all can improve light extraction efficiency, supplement colour gamut etc. using the method for light conversion.The prior art is usually to adopt
Passed through conversion layer by being prepared conversion layer at substrate back with the lower transformational structure of bottom emitting after making beam projecting, supplement luminous energy
Amount improves efficiency the conversion of stability and color, for example partially blue color can achieve the color of ethereal blue by conversion.And
At present in top emitting device, the structure of upper conversion is less, and light-emitting function is single, and the light transmission rate of material itself is limited, light loss
It loses larger.Selector part is determined therefore, it is necessary to study a kind of, the light extraction efficiency of top emitting is provided, and supplements colour gamut.
Summary of the invention
In order to achieve the above object, one aspect of the present invention provides a kind of preparation of top emission OLED device refraction passivation layer
Method, comprising:
Step 1: providing array substrate, it is coated with one layer of optical bond in array substrate upper surface, by the optical bond
Agent forms membrane structure after passing through baking-curing, removes the membrane structure and obtains lens blooming；
Step 2: preparing buffer layer in the upper surface of the lens blooming；
Step 3: preparing passivation film in the buffer layer upper surface, the passivation film is removed up to top emitting OLED
Device reflects passivation layer.
In the present invention, the upper surface of the array substrate is the face being in contact with the upper surface of lens blooming, lens blooming
Upper surface shape it is opposite with the upper surface shape of array substrate.
According to the preferred embodiment of the present invention, the passivation film is solidified by dimethyl silicone polymer class solution
It arrives, one of nano particle, fluorescent material and quanta point material or a variety of is contained in the dimethyl silicone polymer class solution.
Method particularly includes: dimethyl silicone polymer solution is prepared, the nano particle, glimmering of needs is added in dimethyl silicone polymer solution
One of luminescent material or quanta point material are a variety of, are sufficiently mixed uniformly, then apply above-mentioned dimethyl silicone polymer solution
Cloth (spin coating or spraying) on the buffer layer, carries out baking-curing.Baking-curing condition is baking-curing condition commonly used in the art.
According to the preferred embodiment of the present invention, the dimethyl silicone polymer class solution include dimethyl silicone polymer and
Its homologue solution.
According to the preferred embodiment of the present invention, the mass fraction of the quanta point material is 10%-40%；The fluorescence
The mass fraction of material is 10%-30%；The mass fraction of the nano particle is 1%-10%.
According to the preferred embodiment of the present invention, the quanta point material is in cadmium sulfide, cadmium selenide and cadmium telluride
It is one or more；The nano particle is selected from one of zinc oxide, titanium dioxide and magnesia or a variety of.The fluorescent material
Selected from fluorescence luminescent material commonly used in the art, preferably Alq3.
According to the preferred embodiment of the present invention, the optical bond is selected from organic resin class binder；The buffering
Layer material is selected from modified or unmodified, doped or undoped PEDOT:PSS.
According to the preferred embodiment of the present invention, in the step 2, buffer layer with a thickness of 1-10nm.
According to another aspect of the present invention, provide a kind of top emission OLED device, including substrate and on substrate according to
Anode, hole transmission layer, luminescent layer, electron transfer layer and the cathode of secondary setting, are additionally provided on the cathode according to above-mentioned side
Top emission OLED device made from method reflects passivation layer.
Top emitting provided by the invention reflects passivation layer, is pasted onto the top of device, and the changeable angle of total reflection is protected simultaneously
Cathode plays the role of completely cutting off water oxygen.The method that passivation layer uses nanometer transfer printing is reflected, patterned figure is formed, is reflected blunt
Change and nano particle and fluorescence or quanta point material are added in layer, nano particle, which can be formed light, to be reflected, and quantum dot can be to light
It is supplemented, light is converted, reinforce coloration, improve colour gamut.
Detailed description of the invention
Fig. 1 is top emission OLED device refraction passivation layer production flow diagram.
Fig. 2 is top emission OLED device structural schematic diagram.
Wherein, 1 anode, 2 hole transmission layers, 3 luminescent layers, 4 electron transfer layers, 5 cathodes, the refraction of 6 top emission OLED devices
Passivation layer.
Specific embodiment
The present invention is described in detail with reference to embodiments, but the present invention is not limited by following embodiments.
Embodiment 1
On common microlens array substrate be coated with one layer of optical bond, by baking, UV solidification, then formed with
The opposite membrane structure of array configuration, the membrane structure is removed, lens blooming is obtained.It will be in obtained lens blooming
The face being in contact with array substrate upper surface is denoted as upper surface.Buffer layer is prepared in the upper surface spin coating of lens blooming, it is described slow
It rushes layer material and selects PEDOT:PSS.
PDMS (dimethyl silicone polymer) solution is prepared, the quanta point material of needs is added in PDMS solution, is such as vulcanized
Then the zinc oxide nano that mass fraction is 1%-10% is added in 10%-40% in cadmium, cadmium selenide, cadmium telluride, mass fraction control
Rice grain improves the albedo of light, meanwhile, it is sufficiently mixed dispersion quanta point material.By uniformly mixed PDMS solution coating
It in the upper surface for being prepared for buffer layer, is then toasted, passivation film is obtained after heat cure, removed this passivation film and obtain
The top emission OLED device refraction passivation layer needed.By top emission OLED device refraction passivation layer be pasted onto OLED device (including
Substrate and the anode set gradually on substrate, hole transmission layer, luminescent layer, electron transfer layer and cathode) top, obtain
Upper conversion layer, and play the role of protecting cathode.
Although hereinbefore having been made with reference to some embodiments, invention has been described, Ben Fafan is not being departed from
In the case where enclosing, various improvement can be carried out to it, the various features in presently disclosed each embodiment can pass through
Any way be combined with each other use, and the description for not carrying out exhaustive to the case where these combinations in the present specification is only
For the considerations of omitting length and economizing on resources.Therefore, the invention is not limited to specific embodiments disclosed herein, but fall
Enter all technical solutions of the scope of the claims.
Claims (8)
1. a kind of preparation method of top emission OLED device refraction passivation layer, comprising:
Step 1: providing array substrate, it is coated with one layer of optical bond in array substrate upper surface, the optical bond is led to
Membrane structure is formed after overbaking solidification, the membrane structure is removed and obtains lens blooming；
Step 2: preparing buffer layer in the upper surface of the lens blooming；
Step 3: preparing passivation film in the buffer layer upper surface, the passivation film is removed up to top emission OLED device
Reflect passivation layer；
The passivation film solidifies to obtain by dimethyl silicone polymer class solution, contains in the dimethyl silicone polymer class solution
There are one of nano particle, fluorescent material and quanta point material or a variety of；
In the step 2, buffer layer with a thickness of 1-10nm.
2. the method according to claim 1, wherein the upper surface of the lens blooming is upper with array substrate
The face that surface is in contact, shape are opposite with the shape of array substrate upper surface.
3. the method according to claim 1, wherein the dimethyl silicone polymer class solution includes poly dimethyl
Siloxanes and its homologue solution.
4. the method according to claim 1, wherein the mass fraction of the quanta point material is 10%-40%；
The mass fraction of the fluorescent material is 10%-30%；The mass fraction of the nano particle is 1%-10%.
5. the method according to claim 1, wherein the quanta point material is selected from cadmium sulfide, cadmium selenide and tellurium
One of cadmium is a variety of.
6. the method according to claim 1, wherein the nano particle is selected from zinc oxide, titanium dioxide and oxygen
Change one of magnesium or a variety of.
7. the method according to claim 1, wherein the optical bond is selected from organic resin class binder；
The cushioning layer material is selected from modified or unmodified, doped or undoped PEDOT:PSS.
8. a kind of top emission OLED device, the anode set gradually including substrate and on substrate, shine at hole transmission layer
Layer, electron transfer layer and cathode are additionally provided with the top hair obtained of any one of -7 the methods according to claim 1 on the cathode
Penetrate OLED device refraction passivation layer.
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| CN201611241725.5A CN106654064B (en) | 2016-12-29 | 2016-12-29 | A kind of preparation method and applications of top emission OLED device refraction passivation layer |
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| CN201611241725.5A CN106654064B (en) | 2016-12-29 | 2016-12-29 | A kind of preparation method and applications of top emission OLED device refraction passivation layer |
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| WO2019039142A1 (en) * | 2017-08-21 | 2019-02-28 | 東レ株式会社 | Color conversion composition, color conversion sheet, and light source unit, display and lighting device each equipped with same |
| CN111077732A (en) * | 2019-12-20 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Material composition of light coupling-out lens and manufacturing method thereof |
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| US8692446B2 (en) * | 2011-03-17 | 2014-04-08 | 3M Innovative Properties Company | OLED light extraction films having nanoparticles and periodic structures |
| CN102800818A (en) * | 2012-07-26 | 2012-11-28 | 华南理工大学 | Method and structure for improving light emitting rate of bottom-emission organic electroluminescent device |
| WO2014084699A1 (en) * | 2012-11-30 | 2014-06-05 | 주식회사 엘지화학 | Substrate for organic electronic element |
| CN103332031B (en) * | 2013-05-30 | 2016-02-10 | 合肥京东方光电科技有限公司 | The preparation method, scattering rete and preparation method thereof of galley, display unit |
| CN105070802A (en) * | 2015-08-14 | 2015-11-18 | Tcl集团股份有限公司 | White light QLED member and preparation method |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |