CN106654064A - Preparation method and application for top-emitting OLED device refraction passivation layer - Google Patents
Preparation method and application for top-emitting OLED device refraction passivation layer Download PDFInfo
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- CN106654064A CN106654064A CN201611241725.5A CN201611241725A CN106654064A CN 106654064 A CN106654064 A CN 106654064A CN 201611241725 A CN201611241725 A CN 201611241725A CN 106654064 A CN106654064 A CN 106654064A
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- layer
- oled device
- passivation layer
- base palte
- array base
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- 238000002161 passivation Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000001301 oxygen Substances 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 21
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 11
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 11
- 239000002105 nanoparticle Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 4
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 4
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 2
- 239000012467 final product Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 6
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000001723 curing Methods 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a preparation method for a top-emitting OLED device refraction passivation layer. The method comprises the steps of S1, providing an array substrate, coating a layer of optical adhesive on the surface of the array substrate, baking and solidifying the optical adhesive to form a thin film and peeling off the thin film to obtain a lens thin film; S2, preparing a buffer layer on the upper surface of the lens thin film; and S3, preparing a passivation thin film on the upper surface of the buffer layer and peeling off the passivation thin film to obtain the top-emitting OLED device refraction passivation layer. An angle of total reflection can be changed and a cathode is protected by pasting the top-emitting refraction passivation layer provided by the invention on the top of a device, and an effect of isolating water and oxygen is achieved.
Description
Technical field
The invention belongs to field of electronic display, be related to a kind of top emission OLED device refraction passivation layer preparation method and its
Using.
Background technology
In current illumination and display field, due to Organic Light Emitting Diode (OLED) have low start voltage, it is frivolous,
The features such as self-luminous, receive more and more attention, in being widely studied for developing illuminating product and panel industry, to reach
To low energy consumption, frivolous and area source purpose.
OLED's is luminous main by the compound of exciton, then shines in air from luminescent layer.General bottom emitting
OLED illuminating devices, the path of light outgoing is：Luminescent layer-anode-substrate-air, light needs just to be arrived through four steps
Up to air incidence to the eyes of people.The light extraction efficiency of top emitting device is higher than bottom emitting, but because negative electrode typically adopts ITO/
The refractive index of Ag/ITO structures, wherein ITO is higher than air, it may occur that the phenomenon of total reflection causes some light to shine sky
In gas, the loss of luminous efficiency is caused.
Device typically can all adopt the method for light conversion to improve light extraction efficiency, supplement colour gamut etc..Prior art is usually to adopt
With the lower transformational structure of bottom emitting, by preparing conversion layer at substrate back, make, by conversion layer after beam projecting, to supplement luminous energy
Amount, improves the conversion of stabilised efficiency and color, such as partially blue color, through conversion, can reach the color of ethereal blue.And
At present in top emitting device, the structure of upper conversion is less, and lighting function is single, and the light transmission rate of material itself is limited, light loss
Lose larger.Therefore, it is necessary to study a kind of determine selector part, there is provided the light extraction efficiency of top emitting, colour gamut is supplemented.
The content of the invention
In order to achieve the above object, one aspect of the present invention provides the preparation that a kind of top emission OLED device reflects passivation layer
Method, including：
Step one, offer array base palte, are coated with one layer of optical bond, by the optical bond in array base palte upper surface
Agent forms membrane structure after baking-curing, peels off the membrane structure and obtains lens blooming；
Step 2, prepare cushion in the upper surface of the lens blooming；
Step 3, prepare passivation film in the cushion upper surface, peel off the passivation film and obtain final product top emitting OLED
Device reflects passivation layer.
In the present invention, the upper surface of the array base palte is the face contacted with the upper surface of lens blooming, lens blooming
Upper surface shape it is relative with the upper surface shape of array base palte.
Preferred embodiment of the invention, the passivation film is solidified by dimethyl silicone polymer class solution
Arrive, containing one or more in nano particle, fluorescent material and quanta point material in the dimethyl silicone polymer class solution.
Concrete grammar is：Dimethyl silicone polymer solution is prepared, the nano particle of needs, glimmering is added in dimethyl silicone polymer solution
One or more in luminescent material or quanta point material, is sufficiently mixed uniformly, then applies above-mentioned dimethyl silicone polymer solution
Cloth (spin coating or spraying) on the buffer layer, carries out baking-curing.Baking-curing condition is baking-curing condition commonly used in the art.
Preferred embodiment of the invention, the dimethyl silicone polymer class solution include dimethyl silicone polymer and
Its homologue solution.
Preferred embodiment of the invention, the mass fraction of the quanta point material is 10%-40%；The fluorescence
The mass fraction of material is 10%-30%；The mass fraction of the nano particle is 1%-10%.
Preferred embodiment of the invention, the quanta point material is in cadmium sulfide, cadmium selenide and cadmium telluride
One or more；The nano particle is selected from one or more in zinc oxide, titanium dioxide and magnesia.The fluorescent material
Selected from fluorescence luminescent material commonly used in the art, preferably Alq3.
Preferred embodiment of the invention, the optical bond is selected from organic resin class binding agent；The buffering
Layer material is selected from modified or unmodified, doped or undoped PEDOT:PSS.
Preferred embodiment of the invention, in the step 2, the thickness of cushion is 1-10nm.
According to a further aspect in the invention, there is provided a kind of top emission OLED device, including substrate and on substrate according to
The anode of secondary setting, hole transmission layer, luminescent layer, electron transfer layer and negative electrode, are additionally provided with the cathode according to above-mentioned side
Top emission OLED device refraction passivation layer obtained in method.
The top emitting refraction passivation layer that the present invention is provided, is pasted onto the top of device, can change the angle of total reflection and protect simultaneously
Negative electrode, plays a part of to completely cut off water oxygen.Refraction passivation layer forms the figure of patterning using the method for nanometer transfer printing, reflects blunt
Change and add in layer nano particle and fluorescence or quanta point material, nano particle can be formed to light and reflected, and quantum dot can be to light
Supplemented, light is changed, strengthened colourity, improved colour gamut.
Description of the drawings
Fig. 1 is top emission OLED device refraction passivation layer Making programme figure.
Fig. 2 is top emission OLED device structural representation.
Wherein, 1 anode, 2 hole transmission layers, 3 luminescent layers, 4 electron transfer layers, 5 negative electrodes, the refraction of 6 top emission OLED devices
Passivation layer.
Specific embodiment
With reference to embodiments the present invention is described in detail, but the present invention is not limited by following embodiments.
Embodiment 1
On common microlens array substrate be coated with one layer of optical bond, by baking, UV solidification, then formed with
The relative membrane structure of array configuration, the membrane structure is peeled off, and obtains lens blooming.By in the lens blooming for obtaining
The face contacted with array base palte upper surface is designated as upper surface.Cushion is prepared in the upper surface spin coating of lens blooming, it is described slow
Rush layer material and select PEDOT:PSS.
PDMS (dimethyl silicone polymer) solution is prepared, the quanta point material of needs is added in PDMS solution, such as vulcanized
Cadmium, cadmium selenide, cadmium telluride, mass fraction control is subsequently adding the zinc oxide nano that mass fraction is 1%-10% in 10%-40%
Rice grain, improves the albedo of light, meanwhile, it is sufficiently mixed dispersion quanta point material.By the PDMS solution coatings being well mixed
In the upper surface for being prepared for cushion, then toasted, passivation film is obtained after heat cure, peeled off this passivation film and obtain
The top emission OLED device refraction passivation layer of needs.By top emission OLED device refraction passivation layer be pasted onto OLED (including
Substrate and the anode set gradually on substrate, hole transmission layer, luminescent layer, electron transfer layer and negative electrode) top, obtain
Upper conversion layer, and play a part of to protect negative electrode.
Although invention has been described hereinbefore to have been made with reference to some embodiments, but without departing from Ben Fafan
In the case of enclosing, various improvement can be carried out to it, the various features in each presently disclosed embodiment can pass through
Any-mode be combined with each other and uses, and to the description that the situation that these are combined carries out exhaustive is not only in this manual
For the consideration for omitting length and economize on resources.Therefore, specific embodiment disclosed herein is the invention is not limited in, but is fallen
Enter all technical schemes of the scope of claim.
Claims (10)
1. a kind of top emission OLED device reflects the preparation method of passivation layer, including：
Step one, offer array base palte, in array base palte upper surface one layer of optical bond is coated with, and the optical bond is led to
Membrane structure is formed after overbaking solidification, the membrane structure is peeled off and is obtained lens blooming；
Step 2, prepare cushion in the upper surface of the lens blooming；
Step 3, prepare passivation film in the cushion upper surface, peel off the passivation film and obtain final product top emission OLED device
Refraction passivation layer.
2. method according to claim 1, it is characterised in that the upper surface of the lens blooming is upper with array base palte
The face that surface contacts, shape is relative with the shape of array base palte upper surface.
3. method according to claim 1, it is characterised in that the passivation film passes through dimethyl silicone polymer class solution
Solidification is obtained, containing the one kind in nano particle, fluorescent material and quanta point material in the dimethyl silicone polymer class solution
Or it is various.
4. method according to claim 3, it is characterised in that the dimethyl silicone polymer class solution includes poly dimethyl
Siloxanes and its homologue solution.
5. method according to claim 3, it is characterised in that the mass fraction of the quanta point material is 10%-40%；
The mass fraction of the fluorescent material is 10%-30%；The mass fraction of the nano particle is 1%-10%.
6. method according to claim 1, it is characterised in that the quanta point material is selected from cadmium sulfide, cadmium selenide and tellurium
One or more in cadmium.
7. method according to claim 1, it is characterised in that the nano particle is selected from zinc oxide, titanium dioxide and oxygen
Change one or more in magnesium.
8. method according to claim 1, it is characterised in that the optical bond is selected from organic resin class binding agent；
The cushioning layer material is selected from modified or unmodified, doped or undoped PEDOT:PSS.
9. method according to claim 1, it is characterised in that in the step 2, the thickness of cushion is 1-10nm.
10. it is a kind of top emission OLED device, including substrate and the anode set gradually on substrate, hole transmission layer, luminous
Layer, electron transfer layer and negative electrode, are additionally provided with the cathode the top according to obtained in claim 1-9 any one methods described and send out
Penetrate OLED refraction passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611241725.5A CN106654064B (en) | 2016-12-29 | 2016-12-29 | A kind of preparation method and applications of top emission OLED device refraction passivation layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611241725.5A CN106654064B (en) | 2016-12-29 | 2016-12-29 | A kind of preparation method and applications of top emission OLED device refraction passivation layer |
Publications (2)
| Publication Number | Publication Date |
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| CN106654064A true CN106654064A (en) | 2017-05-10 |
| CN106654064B CN106654064B (en) | 2019-02-12 |
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| CN201611241725.5A Active CN106654064B (en) | 2016-12-29 | 2016-12-29 | A kind of preparation method and applications of top emission OLED device refraction passivation layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110832361A (en) * | 2017-08-21 | 2020-02-21 | 东丽株式会社 | Color conversion composition, color conversion sheet, and light source module, display, and lighting device each comprising color conversion sheet |
| WO2021120270A1 (en) * | 2019-12-20 | 2021-06-24 | 深圳市华星光电半导体显示技术有限公司 | Composite material for optically coupled output lens of quantum dot display panel, and manufacturing method |
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| CN102800818A (en) * | 2012-07-26 | 2012-11-28 | 华南理工大学 | Method and structure for improving light emitting rate of bottom-emission organic electroluminescent device |
| CN103332031A (en) * | 2013-05-30 | 2013-10-02 | 合肥京东方光电科技有限公司 | Printing plate, scattering film layer, display device, and production methods of printing plate and scattering film layer |
| CN103443952A (en) * | 2011-03-17 | 2013-12-11 | 3M创新有限公司 | OLED light extraction films having nanoparticles and periodic structures |
| US20150287941A1 (en) * | 2012-11-30 | 2015-10-08 | Lg Chem, Ltd. | Substrate for organic electronic device |
| CN105070802A (en) * | 2015-08-14 | 2015-11-18 | Tcl集团股份有限公司 | White light QLED member and preparation method |
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| CN103443952A (en) * | 2011-03-17 | 2013-12-11 | 3M创新有限公司 | OLED light extraction films having nanoparticles and periodic structures |
| CN102800818A (en) * | 2012-07-26 | 2012-11-28 | 华南理工大学 | Method and structure for improving light emitting rate of bottom-emission organic electroluminescent device |
| US20150287941A1 (en) * | 2012-11-30 | 2015-10-08 | Lg Chem, Ltd. | Substrate for organic electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110832361A (en) * | 2017-08-21 | 2020-02-21 | 东丽株式会社 | Color conversion composition, color conversion sheet, and light source module, display, and lighting device each comprising color conversion sheet |
| CN110832361B (en) * | 2017-08-21 | 2021-12-17 | 东丽株式会社 | Color conversion composition, color conversion sheet, and light source module, display, and lighting device each comprising color conversion sheet |
| WO2021120270A1 (en) * | 2019-12-20 | 2021-06-24 | 深圳市华星光电半导体显示技术有限公司 | Composite material for optically coupled output lens of quantum dot display panel, and manufacturing method |
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| CN106654064B (en) | 2019-02-12 |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |