CN106647067A - 显示装置 - Google Patents

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Publication number
CN106647067A
CN106647067A CN201610955755.6A CN201610955755A CN106647067A CN 106647067 A CN106647067 A CN 106647067A CN 201610955755 A CN201610955755 A CN 201610955755A CN 106647067 A CN106647067 A CN 106647067A
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CN
China
Prior art keywords
selector
line
tft
viewing area
display device
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Granted
Application number
CN201610955755.6A
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English (en)
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CN106647067B (zh
Inventor
铃木乔之
阿部裕行
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Japan Display Central Inc
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Japan Display Central Inc
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G—PHYSICS
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
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Abstract

本发明提供一种显示装置，即使显示区域不是矩形，也能实现选择器的配置并将边框区域抑制得小。本发明的显示装置，其显示区域的外形不是矩形，其特征在于，在上述显示区域(1000)的外侧配置有供给影像信号的驱动器(40)，在上述显示区域与上述驱动器之间存在具备选择器用TFT的选择器(30)，在上述驱动器与上述选择器之间存在影像信号线，在上述选择器与上述显示区域之间存在漏极线(20)，在上述显示区域的外侧存在向扫描线(10)供给扫描信号的扫描电路(11)，上述选择器存在于上述扫描线与上述显示区域之间，上述选择器由公共电极即ITO覆盖，在上述选择器的外侧配置有公共总线布线。

Description

显示装置
技术领域
本发明涉及显示装置，尤其涉及显示区域及外形不是矩形的显示装置。
背景技术
在显示装置之一的液晶显示装置中，配置有具有像素电极及薄膜晶体管(TFT)等且像素形成为矩阵状的TFT基板、和与TFT基板相对的相对基板，并且，在TFT基板与相对基板之间夹持有液晶。然后，通过针对每个像素控制基于液晶分子的光的透射率而形成图像。液晶显示装置扁平且轻型，因此广泛应用于各种领域。
在液晶显示装置中，显示区域或外形多为矩形的，但在应用于汽车的显示装置、和应用于各种游戏等的显示装置等中，也要求显示区域或装置的外形不是矩形的显示装置。作为记载有由显示装置不是矩形而引起的扫描线驱动电路的问题和对策的文献，可以列举专利文献1。
现有技术文献
专利文献1：日本特开2008-292995号公报
若显示区域不是矩形，则配置在显示装置周边的周边电路或布线的布局与显示区域是矩形的情况不同。另外，若显示装置不是矩形，则会产生显示区域为矩形时不会产生的问题。此后，将不是矩形的显示区域称为异形显示区域，将显示区域不是矩形的显示面板称为异形显示面板。
即使在异形显示面板的情况下，也大多要求高分辨率。若设置为高分辨率，则横向上的像素增多，向像素供给影像信号的漏极线的数量也增多。若漏极线的数量增多，则在显示区域外，漏极引出线的数量增多，因此所需的布线区域的面积增大。尤其是最近，有要求想缩小从显示区域的端部至显示面板的端部的宽度、也就是想要缩小所谓的边框区域。为此，需要减少漏极引出线的数量。
为了防止漏极引出线的数量增大，有一种技术是使用之后说明的选择器电路来使从驱动IC供给的影像信号线的数量减少至1/2或者1/3等，从而减少引出线的数量。然而，若在异形显示区域内使用选择器电路，则会产生选择器电路与扫描线、或者公共布线等与选择器电路之间的干扰(布局上的交叉、或者伴随交叉或靠近的电气影响)。
发明内容
本发明的课题在于，即使在使用具有包含选择器电路在内的异形显示区域的异形显示面板的情况下，也会实现能够限制边框区域的显示区域。
本发明是克服上述课题的方案，主要的具体方式如下。
(1)一种液晶显示装置，其中，扫描线在第一方向上延伸并在第二方向上排列，漏极线在上述第二方向上延伸并在上述第一方向上排列，在由扫描线和漏极线包围而成的区域内形成有像素的TFT基板上隔着液晶配置有相对基板，而且显示区域的外形不是矩形，该液晶显示装置的特征在于，在上述显示区域的外侧配置有供给影像信号的驱动器，在上述显示区域与上述驱动器之间存在具备选择器用TFT的选择器，在上述驱动器与上述选择器之间存在影像信号线，在上述选择器与上述显示区域之间存在上述漏极线，在将与上述显示区域对应的上述漏极线的数量设为Nd、并将与上述漏极线对应的上述影像信号线的数量设为Nv的情况下，Nd/Nv＝n，且n为2以上的整数，
在上述显示区域的外侧存在向上述扫描线供给扫描信号的扫描电路，上述选择器存在于上述扫描线与上述显示区域之间、或者上述扫描电路与上述显示区域之间，上述选择器由公共电极即ITO覆盖，在上述选择器的外侧配置有公共总线布线。
(2)根据(1)所述的液晶显示装置，其特征在于，向上述选择器用TFT供给栅极电压的选择器控制信号线形成在与上述漏极线相同的层上。
附图说明
图1是液晶显示装置的显示区域的剖视图。
图2是异形显示面板的例子。
图3是表示选择器的结构的等效电路。
图4是表示显示区域的周边的示意图。
图5是表示形成到漏极线为止的状态下的显示区域的周边布局的俯视图。
图6是表示形成到像素电极为止的状态下的显示区域的周边布局的俯视图。
图7是选择器部分中的剖视图。
图8是异形显示面板的另一个例子。
图9是表示在显示区域为矩形的情况下的布局的俯视图。
附图标记说明
10扫描线，11扫描电路，20漏极线，21影像信号线，30选择器，31选择器控制信号线，32选择器用TFT，40驱动IC，50像素，51像素用TFT，52像素电容，100TFT基板，101第一底膜，102第二底膜，103半导体层，104栅极绝缘膜，105栅电极，106层间绝缘膜，107接触电极，108无机钝化膜，109有机钝化膜，110公共电极，111电容绝缘膜，112像素电极，113配向膜，120第一通孔，130第二通孔，140通孔，150端子区域，200相对基板，201彩色滤光片，202黑矩阵，203外层涂覆膜(overcoat film)，300液晶层，301液晶分子，1121虚拟像素电极，D漏极部，S源极部
具体实施方式
显示装置有很多种，在其中之一的液晶显示装置中，视角特性成为问题。视角特性是在从正面和从斜方向观看画面的情况下亮度发生变化或色度发生变化的现象。视角特性具有通过水平方向的电场使液晶分子动作的IPS(In Plane Switching：平面转换)方式优异的特性。在之后的实施方式中，以IPS方式的液晶显示装置为前提进行说明。本发明虽然以显示区域外侧的结构为对象，但为了层构造的说明，首先对显示区域的截面构造进行说明。
图1是IPS方式的液晶显示装置的剖视图。图1中的TFT是所谓的顶栅型TFT，作为使用的半导体，可以使用LTPS(Low Temperature Poly-Si：低温多晶硅)。图1中，在玻璃基板100之上通过CVD(Chemical Vapor Deposition：化学气相沉积)形成有由SiN构成的第一底膜101以及由SiO2构成的第二底膜102。第一底膜101及第二底膜102的作用是防止来自玻璃基板100的杂质污染半导体层103。
在第二底膜102之上形成有半导体层103。该半导体层103是在第二底膜102之上通过CVD形成a-Si膜，并通过对该a-Si膜进行激光退火而将其转换成poly-Si(多晶硅)膜而形成的。通过光刻法将poly-Si膜图案化。半导体层103的D表示TFT的漏极部，S表示源极部。
在半导体膜103之上形成有栅极绝缘膜104。该栅极绝缘膜104是基于TEOS(四乙氧基硅烷)的SiO2膜。该膜也通过CVD形成。在其上形成有栅电极105。栅电极105兼作为扫描线。栅电极105例如通过MoW膜形成。当需要缩小栅电极105或者扫描线10的电阻时，使用Al合金。
通过SiO2以覆盖栅电极105的方式形成层间绝缘膜106。层间绝缘膜106用于将栅电极105与接触电极107绝缘。在层间绝缘膜106及栅极绝缘膜104上，形成有用于将半导体层103的源极部S与接触电极107连接的通孔120。对层间绝缘膜106和栅极绝缘膜104同时进行用于形成通孔120的光刻法。
在层间绝缘膜106之上形成有接触电极107。接触电极107经由通孔130与像素电极112连接。TFT在未图示的部分中与漏极线连接。
接触电极107及漏极线在同一层且同时形成。为了缩小电阻，接触电极107及漏极线(之后使接触电极107作为代表)例如使用AlSi合金。由于AlSi合金会产生小丘(hillock)，或者Al会向其他层扩散，所以采取了例如通过未图示的基于MoW的屏蔽层、以及覆盖层来夹着AlSi的构造。
以覆盖接触电极107的方式包覆无机钝化膜(绝缘膜)108，从而保护整个TFT。无机钝化膜108与第一底膜101同样是通过CVD形成的。以覆盖无机钝化膜108的方式形成有机钝化膜109。有机钝化膜109由感光性的丙烯酸树脂形成。除了丙烯酸树脂之外，有机钝化膜109还能由硅树脂、环氧树脂、聚酰亚胺树脂等形成。有机钝化膜109具有作为平坦化膜的作用，因此形成得厚。有机钝化膜109的膜厚为1～4μm，但多数情况下为2μm左右。
为了使像素电极112与接触电极107导通，在有机钝化膜109形成有通孔130。之后，通过溅射形成作为公共电极110的ITO(Indium Tin Oxide：氧化铟锡)，并以从通孔130及其周边除去ITO的方式进行图案化。公共电极110能够与各像素共同形成为平面状。由于公共电极是最初形成的ITO，所以有时也称为第一ITO。
之后，通过CVD在整个面上形成作为电容绝缘膜111的SiN。之后，在通孔130内，在电容绝缘膜111及无机钝化膜108上形成用于使接触电极107与像素电极112导通的通孔。
之后，通过溅射形成ITO，并进行图案化，从而形成像素电极112。由于像素电极是第二个形成的ITO，所以有时也称为第二ITO。像素电极在俯视下是例如图6所示的弯曲的条带状。使像素电极弯曲是为了使视角特性更均等。在像素电极112上通过柔性版印刷或者喷墨打印机等涂敷配向膜材料并进行烧制，形成配向膜113。在配向膜113的配向处理中，除了研磨法之外还可以使用基于偏振光紫外线的光配向法。
当在像素电极112与公共电极110之间施加电压时，会产生图1所示的电力线。通过该电场使液晶分子301旋转，并针对每个像素控制从液晶层300通过的光的量，由此形成图像。
在图1中，隔着液晶层300配置有相对基板200。在相对基板200的内侧形成有彩色滤光片201。彩色滤光片201针对每个像素形成有红、绿、蓝的彩色滤光片，由此形成彩色图像。在彩色滤光片201与彩色滤光片201之间形成有黑矩阵202，提升了图像的对比度。此外，黑矩阵202还具有作为TFT的遮光膜的作用，防止了光电流向TFT的流动。
以覆盖彩色滤光片201及黑矩阵202的方式形成有外层涂覆膜203。由于彩色滤光片201及黑矩阵202的表面凹凸不平，所以通过外层涂覆膜203使表面平整。在外层涂覆膜之上，形成有用于决定液晶的初始配向的配向膜113。配向膜113的配向处理与TFT基板100侧的配向膜113同样地使用研磨法或者光配向法。
此外，以上的结构为例子，也有例如根据不同品种而未形成TFT基板100中的无机钝化膜108的情况。另外，通孔130的形成工序也有因品种而不同的情况。以下，使用实施例对本发明进行具体说明。
实施例1
图2是异形显示面板的例子。图2中，显示区域1000和外形均形成为上下为直线、且侧部为曲线的跑道状。图2是TFT基板侧的俯视图。图2中，在显示区域1000内，扫描线10在横向上延伸，漏极线20在纵向上延伸，并在由扫描线10和漏极线20包围而成的区域内形成有像素。
图2中，在与显示区域1000相比的下侧配置有选择器30和驱动IC40。驱动IC40的外侧成为用于与柔性布线基板连接的端子区域150。经由选择器30从驱动IC40向显示区域1000的漏极线20供给影像信号。漏极线20存在与显示区域1000的横向的像素相当的量，但从驱动IC40至选择器30的影像信号引出线21的数量例如为漏极线的1/3。此外，若将漏极线的数量设为Nd，并将影像信号引出线的数量设为Nv，则Nd/Nv＝n，且n为2以上的整数。
在显示区域1000的两侧，存在用于向扫描线10供给扫描信号的扫描电路11。在图2中，选择器30与显示区域1000相邻地配置。由于显示区域1000为跑道状，所以在显示区域1000侧部的曲线部的外侧的区域A内，在扫描电路11与显示区域1000之间存在选择器30。在这种情况下，在扫描线10与选择器30之间会产生布线上的干扰。
图9是显示区域1000为矩形的情况下的显示装置的俯视图。图9中，在显示区域1000的下侧依次配置有选择器30、驱动IC40、和端子部150，并在显示区域1000的两侧存在扫描电路11。在这种情况下，从扫描电路11延伸出的扫描线10与选择器30之间不存在干扰。
本发明在异形显示面板中提供一种防止扫描线10与选择器30之间的干扰、且缩小边框区域的结构。图3是表示选择器30的结构的等效电路。上侧是显示区域侧，下侧是驱动IC侧。在图3中，具有TFT51及像素电容52的像素50在横向上排列。经由漏极线20向各像素50供给影像信号。另外，各像素50的TFT51通过扫描线10来控制。
选择器30是为了减少显示区域外的漏极引出线(影像信号引出线)21的数量而配置的，且与显示区域的最外部相邻地配置。通过图3中的选择器，从驱动IC输出的影像信号引出线21的数量变成漏极线20的1/3。因此，能够节约用于影像信号引出线21的引出布线的面积。
另一方面，为了控制选择器30，需要选择器控制线31。图4是表示图2的区域A中的选择器30和像素50的配置的俯视图。在图4中，红像素R、绿像素G、蓝像素B这三个像素50的组合以使显示区域1000的外端近似曲线的方式形成为梯状。与各像素组合对应的选择器30与像素组合相邻地形成。以往，形成有与显示区域1000的外端部相邻、且向显示区域的公共电极供给公共电压的公共总线布线，但本发明中，在配置有选择器30的这点上不同。
对于各像素，从配置在图4的横向外侧的扫描电路连接有扫描线。也就是说，选择器30具有选择器用TFT，但需要防止选择器用TFT的栅电极、即选择器控制线与扫描线之间的干扰。
图5是表示形成到漏极线20为止的状态下的显示区域端部附近的布线布局的俯视图。在图5的显示区域内，弯曲成“く”字形的漏极线20在纵向上延伸并在横向上排列，扫描线10在横向上延伸并在纵向上排列。由漏极线20和扫描线10包围而成的区域为像素，虽然形成有像素电极，但在图5中尚未形成像素电极。在图5中，与虚线相比，形成有漏极线20的一侧成为显示区域。
与最外周的像素相邻地在每个漏极线20上配置有选择器用TFT32。用于向各选择器用TFT32发送栅极信号的三条选择器控制线31向选择器用TFT32的外侧延伸。为了防止扫描线10与选择器控制信号线31之间的干扰，选择器控制线31在与漏极线20相同的层上布线，在即将与选择器用TFT32连接之前经由通孔改换到与扫描线10相同的层上。由此，即使显示区域为异形，也能将选择器30与显示区域相邻地配置。
共同经由影像信号引出线21向成为组合的三个选择器用TFT32发送影像信号。通过经由选择器控制线31的信号而将该影像信号分配供给至漏极线20。因此，在图5中，影像信号引出线21的数量变成漏极线20的数量的1/3。在本申请发明中，将选择器以靠近显示区域的方式设置。由此，影像信号引出线21与扫描线交叉。然而，在将选择器以远离显示区域的方式设置的情况下，虽然能够减少影像信号引出线与扫描线的交叉处，但是与漏极线的交叉数量会增加。根据本申请发明的结构，能够减少扫描线与漏极线的交叉处数量。进一步地，通过将选择器控制线31设置在影像信号引出线与选择器之间，能够减少选择器控制线与影像信号引出线的交叉处，并能缩短选择器控制线的长度。此外，在图5中，虽然将选择器控制线沿着选择器配置，但也能将其与影像线引出线平行地设置。由此，能够进一步缩短选择器控制线的长度。
另外，如图4所示，由各选择器负责的Y方向的像素的数量沿X方向而不同。例如，在显示区域1000的外形为直线的部分，选择器30负责的像素的数量为320像素；在显示区域的外形为曲线的部分，选择器30负责的像素的最少数量为6像素。
于是，由各选择器30负责的布线的电阻或电容不同，因此，信号的大小和延迟等因位置而不同。为了防止该情况，在本发明中，根据位置而改变选择器用TFT32的通道宽度。例如，配置在直线部的选择器用TFT32的通道宽度与配置在曲线部的选择器用TFT32的通道宽度相比变大。另外，也根据位置而改变配置在曲线部的选择器用TFT32的通道宽度。由此，即使是异形显示面板，也能形成均匀的图像。
图6是对于与图5相同的区域形成到像素电极112为止的状态下的俯视图。即，相对于图5，是无机钝化膜、有机钝化膜、公共电极、电容绝缘膜、像素电极层叠形成的状态。在图6中，基于虚线，形成有漏极线20的一侧成为显示区域。
在图6中，透明电极即公共电极110形成在除通孔130之外的整个面上。在显示区域内，通过ITO在由漏极线20和扫描线10包围而成的区域内形成有像素电极112。在显示区域的外侧，以与显示区域的像素电极112相同的间距形成有与像素电极112相同形状的虚拟像素电极1121。由此，显示区域的最外部中的像素电极112能够以与其他显示区域内的像素电极112同样的工序条件形成。如后所述，能够向虚拟的像素电极1121施加公共电压。
图7是与图5的A-A对应的剖视图，示出了选择器用TFT32附近的剖视图。层构造与利用图1说明了的显示区域中的截面构造相同。即，在半导体层103之上形成有栅极绝缘膜104，在栅极绝缘膜104之上形成有栅电极105，并以覆盖栅电极105的方式形成有层间绝缘膜106。
栅电极105与选择器控制线31连接，源电极成为影像信号线21。另外，漏电极为漏极线20。即，选择器用TFT32并排形成有两个源电极。以覆盖漏电极及源电极的方式形成有无机钝化膜108，并在无机钝化膜108之上形成了有机钝化膜109。在有机钝化膜109之上，形成有由ITO形成为平面状的公共电极110。
以覆盖公共电极110的方式形成有电容绝缘膜111，并在电容绝缘膜111之上形成有虚拟像素电极1121。即，在本发明中，构成为利用公共电极110覆盖选择器用TFT32之上的形式。该公共电极110与显示区域的公共电极110连续地形成。通过构成这样的结构，由公共电极110遮蔽保护选择器30。然后，从与选择器30相比形成在更外侧的公共布线(公共总线布线)向公共电极110供给公共电压。
以往，公共总线布线与显示区域相邻地形成，但在本发明的结构中，公共总线布线与选择器30相比形成在外侧。通过构成这样的结构，能够将选择器控制线31形成在与漏极线20或者公共总线布线相同的层上。
在不想使图6所示的虚拟像素电极1121悬空(float)的情况下，如图7的右侧所示，在电容绝缘膜111上形成通孔140，从而能够向虚拟像素电极1121供给公共电压。此外，形成在电容绝缘膜111上的通孔140能够在显示区域中的通孔130内与形成在电容绝缘膜111上形成的通孔同时形成。
如以上所说明的那样，根据本发明，即使在为异形显示面板的情况下，由于能够与显示区域相邻地形成选择器，所以也能够防止异形显示面板中的边框区域的面积变大。另外，能够通过公共电极来遮蔽保护选择器，并且，通过使选择器用TFT的通道宽度根据位置变化，即使在异形显示面板中也能形成均匀的画面。
以上，对图2所示的跑道状的异形显示面板进行了说明，但并不限于此，例如还能适用于图8所示的心形的异形显示面板。相对于图8的形状，能够适用与用图2说明的大体上相同的结构。也就是说，图8的区域A能够设为与图2的区域A同样的结构。但是，在图8中由于显示区域的上部并不是直线，所以配置在显示区域下方的选择器用TFT的电容即通道宽度在直线部也需要进行改变。
图2、图8等的异形显示区域是直线与曲线的组合，但对于具有利用三角形、五边形、六边形等边为直线的组合来形成的显示区域的显示装置也能适用本发明。另外，图2、图8等的扫描电路存在于画面的两侧，但在扫描电路存在于画面的单侧的情况下也能适用本发明。此外，本发明并不限定于液晶显示装置，还能适用于具有矩形以外的形状的显示区域、且具有对于显示区域的漏极线(影像信号线)分时间段地供给影像信号的选择器(开关电路)的有机EL型显示装置等所有显示装置。

Claims (14)

1.一种显示装置，其具有形成有扫描线、漏极线和影像信号引出线的TFT基板，该显示装置的特征在于，
在所述漏极线与影像信号引出线之间存在选择器，
所述扫描线与供给扫描信号的扫描电路连接，
所述扫描线与所述影像信号引出线交叉。
2.根据权利要求1所述的显示装置，其特征在于，
在所述选择器与所述扫描电路之间设有公共布线。
3.根据权利要求1所述的显示装置，其特征在于，
所述选择器具有选择器TFT，与所述选择器TFT的栅极连接的选择器控制线形成在与所述漏极线相同的层上。
4.根据权利要求2所述的显示装置，其特征在于，
所述选择器具有选择器TFT，与所述选择器TFT的栅极连接的选择器控制线形成在与所述漏极线相同的层上。
5.根据权利要求1所述的显示装置，其特征在于，
所述选择器具有选择器TFT，与所述选择器TFT的栅极连接的供给电压的选择器控制线设置在所述影像信号引出线与所述选择器之间。
6.根据权利要求2所述的显示装置，其特征在于，
所述选择器具有选择器TFT，与所述选择器TFT的栅极连接的供给电压的选择器控制线设置在所述影像信号引出线与所述选择器之间。
7.根据权利要求1～6中任一项所述的显示装置，其特征在于，
所述选择器控制线形成在与漏极线相同的层上。
8.根据权利要求1～6中任一项所述的显示装置，其特征在于，
所述显示装置的显示区域不是矩形。
9.根据权利要求1～6中任一项所述的显示装置，其特征在于，
在所述公共布线与所述TFT基板的端部之间设有所述扫描电路。
10.根据权利要求1～6中任一项所述的显示装置，其特征在于，
所述选择器控制线与所述扫描线经由绝缘膜交叉，所述选择器控制线与所述影像信号引出线经由所述绝缘膜交叉。
11.根据权利要求8所述的显示装置，其特征在于，
所述影像信号引出线与驱动IC连接，所述驱动IC沿着所述显示区域的第一边形成，所述扫描电路沿着所述显示区域的与所述第一边相邻的第二边、和与所述第二边相对的第三边形成。
12.根据权利要求8所述的显示装置，其特征在于，
所述显示区域中的所述扫描线的延伸方向上的像素的数量与所述漏极线的延伸方向上的像素的数量不同，与所述漏极线的延伸方向上的像素的数量多的列对应的所述选择器TFT的通道宽度比与所述漏极线的延伸方向上的像素的数量少的列对应的所述选择器TFT的通道宽度大。
13.根据权利要求11所述的显示装置，其特征在于，
所述显示区域的外形由直线部分和曲线部分的组合构成，与所述直线部分对应地配置有所述驱动IC。
14.根据权利要求11所述的显示装置，其特征在于，
所述显示区域的外形由直线部分和曲线部分的组合构成，与所述直线部分对应地配置有所述驱动IC，
与所述直线部分对应的所述选择器TFT的通道宽度比与所述曲线部分对应的所述选择器TFT的通道宽度大。
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US10969641B2 (en) 2021-04-06
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US20200174331A1 (en) 2020-06-04
US10281787B2 (en) 2019-05-07
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US10591794B2 (en) 2020-03-17
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