CN106611806A - Infrared detector structure and preparation method thereof - Google Patents
Infrared detector structure and preparation method thereof Download PDFInfo
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- CN106611806A CN106611806A CN201510697765.XA CN201510697765A CN106611806A CN 106611806 A CN106611806 A CN 106611806A CN 201510697765 A CN201510697765 A CN 201510697765A CN 106611806 A CN106611806 A CN 106611806A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention aims to provide an infrared detector structure and a preparation method thereof. Specifically, the infrared detector structure comprises a substrate, a main body bridge floor, a heat-insulating beam and a connecting column, wherein the heat-insulating beam is used for supporting the main body bridge floor to suspend above the substrate, thereby enabling the main body bridge floor to be separated from the substrate; the connecting column is used for connecting the substrate and the heat-insulating beam; the end face, which faces towards the main body bridge floor, of the substrate is provided with an infrared reflection film, the main body bridge floor comprises an electrode film pattern and a thermosensitive film pattern, the electrode film pattern comprises a positive electrode pattern and a negative electrode pattern which are formed by a comb tooth-shaped pattern respectively, comb teeth of the positive electrode pattern and comb teeth of the negative electrode pattern are arranged in a staggered manner, a strip-shaped zigzag region is formed between the positive electrode pattern and the negative electrode pattern, the strip-shaped region comprises a thermosensitive film region and through hole regions, and the through hole regions are located at bending parts of the strip-shaped region and divide the thermosensitive film region into a plurality of independent rectangular regions. Compared with the prior art, the infrared detector structure solves defects of nonuniform current and point discharge of staggered configuration of electrodes.
Description
Technical field
The present invention relates to Infrared Detectorss technical field, more particularly to a kind of infrared detector structure
And preparation method thereof technology.
Background technology
Non-refrigerated infrared detector is widely used to infrared thermal imaging field, and which passes through to absorb
Infra-red radiation, causes detector thermosensitive film temperature change, temperature change to cause thermosensitive film electricity
Resistance changes, and the change of resistance is converted to output signal by reading circuit.
Typical non-refrigerated infrared detector include connecting pole, adiabatic beam, infrared absorber,
The read-out electrode that is made up of electrode film, and be made up of part or all of thermosensitive film
Critesistor.Electrode film includes positive and negative electrode two parts, and one end of each part passes through respectively
Adiabatic beam, connecting pole are electrically connected to the reading circuit in substrate, while adiabatic beam and connecting pole
Constitute the mechanical support of thermosensitive film；The other end connection thermosensitive film of electrode film.Adiabatic beam
Between electrode film, thermosensitive film and possible dielectric film part, can be collectively referred to as main body
Bridge floor.
When Infrared Detectorss work, reading circuit applies inclined to thermosensitive film by electrode film
Voltage is put, to form the electric current by thermo-sensitive material thin film.Infrared spoke is received in Infrared Detectorss
When penetrating, electrode film absorbs infra-red radiation and conducts to thermo-sensitive material thin film, causes thermosensitive film
Temperature change, so as to cause the change in resistance of thermosensitive film, by the electric current of thermosensitive film
Also change simultaneously, the signal is exported after reading circuit process.
The final performance of Infrared Detectorss generally depends on following factor：1) adiabatic beam
Thermal resistance；2) absorption efficiency of Infrared Absorbing Thin Film；3) electrical noise, including reading circuit sheet
The noise of body, and the 1/f noise of the thermosensitive film of detector；4) time constant of detector,
Which is determined with the thermal capacitance of thin film by the thermal resistance of adiabatic beam.
In prior art with regard to Infrared Detectorss critesistor and connection critesistor electricity
The frame mode of pole, mainly has 2 kinds：A kind of is " sandwich " structure, i.e., respectively as positive and negative
The electrode film of pole is located at the upper and lower of thermosensitive film, by the electric current of thermosensitive film along vertical
In the direction of thin film；Coplanar electrodes, i.e. both positive and negative polarity electrode film be can be described as second positioned at one
In plane, and thermosensitive film is then located above or below electrode plane, by thermosensitive film electricity
The electric current of resistance is along the direction parallel to thin film.Above-mentioned the first structure, generally requires comparison high
Thermosensitive film thickness to reach the absolute resistance value that suitable reading circuit is processed, and the temperature-sensitive of thickness
Thin film will cause detector and the thermal capacitance of substrate heat insulating part to increase, that is, increase the time of detector
Constant, is rarely applied in the detector of maturation at present.Second electrode structure is current master
Flow Technique.
In a particular application, as the electrode film of Infrared Detectorss is conductor, therefore which can
Simultaneously as infrared absorber, caused more complicated with the infrared absorption layer for avoiding increase extra
Processing technique, by the resistance and spatial arrangement of suitable control electrode film, can optimize infrared
Absorb, therefore, determine that the parameter of INFRARED ABSORPTION efficiency includes the area and figure row of electrode film
Row mode.
As United States Patent (USP) US5912464 discloses a kind of Infrared Detectorss knot in prior art
Structure, the electrode in the structure are staggered comb-like electrode.As shown in figure 1, the structure
Including two connecting poles 1, two adiabatic beams 2, electrode film 3 and thermosensitive films 4, wherein,
Electrode film 3 is located on thermosensitive film 4, and the positive pole and negative pole that electrode film 3 is formed is located at
One plane, W represent the width of effective current-carrying part of thermosensitive film, and L represents thermo-sensitive material
Effective current-carrying part length, here, the diagonal line hatches part in Fig. 1 be negative or positive electrode,
Dotted portion is negative pole or positive pole.It will be seen from figure 1 that thermosensitive film 4 in the structure
Shape is bent back and forth.Due to active conductor thin film (i.e. effective current-carrying part of thermosensitive film)
Shape bend back and forth, and while contain two orthogonal directions (diagram horizontal and vertical)
Strip conductor, all favourable to the absorption of all polarised directions (infra-red radiation of nature is nothing
Polarized radiation, that is, contain radiation of the electric field along all polarised directions).But it is this staggered
Electrode structure has an intrinsic defect, in thin film conductor bending part, thermosensitive film both sides
Simultaneously Non-completety symmetry is parallel for electrode, i.e., be uneven in bending place electric current.More seriously,
Bending place contains point electrode, has Current maxima in tip location, that is, have point discharge existing
As.No matter current unevenness is even or point discharge, can all additionally introduce electrical noise.In addition,
The situation of planar array is constituted in probe unit, cutting-edge structure causes the resistance of probe unit to be processed
Technique is very sensitive, increased the inhomogeneities between probe unit in array.And effective resistance
Bending number of times it is more, the bending part accounting of active conductor thin film is bigger, the noise of introducing
It is more.
The content of the invention
It is an object of the present invention to provide a kind of infrared detector structure and preparation method thereof.
According to an aspect of the invention, there is provided a kind of infrared detector structure, including：Substrate,
Main body bridge floor, and：
Adiabatic beam, for supporting the main body bridge floor to be suspended from above the substrate so that the main body
Bridge floor is separated with the substrate；
Connecting pole, for connecting the substrate with the adiabatic beam；
Wherein, the substrate has infrared reflection films, institute towards on the end face of the main body bridge floor
Main body bridge floor is stated comprising electrode film figure and thermosensitive film figure, the electrode film figure includes
Respectively by the positive pole figure and negative pole figure of comb teeth-shaped figure constitution, the positive pole figure and negative pole figure
The comb of shape is staggered, between form the bar-shaped zone for bending back and forth, the bar-shaped zone is included
Thermosensitive film region and via regions, wherein, the via regions are located at the bar-shaped zone
Bending place, is multiple independent rectangular regions by the thermosensitive film region segmentation.
According to a further aspect in the invention, additionally provide a kind of such as aforementioned according to the present invention for preparing
The method of the infrared detector structure of one side, wherein, the method is comprised the following steps：
- infrared reflection films are deposited on substrate；
- determine the position of the infrared reflection films and the infrared external reflection beyond removing the position
Thin film；
A has coating sacrifice layer material on the end face of the infrared reflection films in the deposition of the substrate
Material, to form sacrifice layer；
B forms the groove of the connecting pole for the infrared detector structure on the sacrifice layer；
C deposited conductive metal thin film on the sacrifice layer and in the groove, and remove described recessed
The conductor metal thin film beyond groove location, to be constituted the connection by the conductor metal thin film
Post；
D depositing electrode thin film on the sacrifice layer；
- determine the position of electrode film figure formed by the electrode film and remove the position with
The outer electrode film, wherein, the electrode film figure is included respectively by comb teeth-shaped figure structure
Into positive pole figure and the comb of negative pole figure, the positive pole figure and negative pole figure be staggered,
Between form the bar-shaped zone for bending back and forth；
E has deposition temperature-sensitive on the end face of the electrode film figure thin in the formation of the sacrifice layer
Film；
F determines the correspondence position of the adiabatic beam, main body bridge floor and through hole of the infrared detector structure,
The electrode film outside the correspondence position, the thermosensitive film are removed, to form the thermal insulation
Beam, the main body bridge floor and the through hole, wherein, the adiabatic beam is used to support the main body bridge
Face is suspended from above the substrate, and is connected with the substrate by the connecting pole, the main body bridge
Bread contains the electrode film figure and the thermosensitive film figure formed by the thermosensitive film, described
Via regions are located at the bending place of the bar-shaped zone, are multiple independences by thermosensitive film region segmentation
Rectangular region；
G removes the sacrificial layer material, to obtain the infrared detector structure, wherein, it is described
There is space between main body bridge floor and the substrate.
According to another aspect of the invention, additionally provide a kind of such as aforementioned according to the present invention for preparing
The method of the infrared detector structure of one side, wherein, the method is comprised the following steps：
- infrared reflection films are deposited on substrate；
- determine the position of the infrared reflection films and the infrared external reflection beyond removing the position
Thin film；
A has coating sacrifice layer material on the end face of the infrared reflection films in the deposition of the substrate
Material, to form sacrifice layer；
B forms the groove of the connecting pole for the infrared detector structure on the sacrifice layer；
C deposited conductive metal thin film on the sacrifice layer and in the groove, and remove described recessed
The conductor metal thin film beyond groove location, to be constituted the connection by the conductor metal thin film
Post；
D deposits thermosensitive film on the sacrifice layer；
E depositing electrode thin film on the thermosensitive film；
- determine the position of electrode film figure formed by the electrode film and remove the position with
The outer electrode film, and thermosensitive film region is formed, wherein, the electrode film figure
Include the positive pole figure and negative pole figure respectively by comb teeth-shaped figure constitution, the positive pole figure and negative pole
The comb of figure is staggered, between form the bar-shaped zone for bending back and forth；
F determines the corresponding position of the adiabatic beam of the infrared detector structure, main body bridge floor and through hole
Put, the electrode film, the thermosensitive film outside the removal correspondence position is described to be formed
Adiabatic beam, the main body bridge floor, the through hole and thermosensitive film figure, wherein, the adiabatic beam
For supporting the main body bridge floor to be suspended from above the substrate, and pass through the connecting pole and the lining
Bottom is connected, and the main body bridge floor includes the electrode film figure and thermosensitive film figure, described logical
Bore region is located at the bending place of the bar-shaped zone, is multiple only by the thermosensitive film region segmentation
Vertical rectangular region；
G removes the sacrificial layer material, to obtain the infrared detector structure, wherein, it is described
There is space between main body bridge floor and the substrate.
In accordance with a further aspect of the present invention, a kind of non-refrigerated infrared detector is additionally provided, wherein,
The non-refrigerated infrared detector is included such as a kind of aforementioned infrared acquisition according to one aspect of the invention
Device structure.
Further aspect of the invention, additionally provides a kind of infrared thermoviewer, wherein, it is described red
Outer imager is included such as a kind of aforementioned infrared detector structure according to one aspect of the invention.
Further aspect of the invention, additionally provides a kind of focal plane arrays (FPA), wherein, Jiao puts down
Face array is included such as a kind of aforementioned infrared detector structure according to one aspect of the invention.
Compared with prior art, the composition electrode film figure of infrared detector structure of the invention
Positive pole figure and the comb of negative pole figure be staggered, between form the slab region for bending back and forth
Domain, the bar-shaped zone include thermosensitive film region and via regions, wherein, the through hole area
Domain is located at the bending place of the bar-shaped zone, is multiple independent by the thermosensitive film region segmentation
Rectangular region, solve electrode in prior art it is interconnected intrinsic uneven electric current and
Point discharge problem, while also reducing to a certain extent because the detector that membrane stress causes is tied
Structure and electrical property heterogeneity so that noise of detector is optimum, and simplifies technological process, reduce
The time constant of panel detector structure.
Description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings,
The other features, objects and advantages of the present invention will become more apparent upon：
Fig. 1 illustrates a kind of infrared detector structure of the prior art；
Fig. 2 illustrates the three-dimensional signal of infrared detector structure according to an embodiment of the invention
Figure；
Fig. 3 illustrates corresponding with the infrared detector structure schematic perspective view shown in Fig. 2 infrared
The structure top view of panel detector structure and the sectional view along A-A sections；
Fig. 4 illustrate the structure top view of the infrared detector structure of another embodiment of the present invention and
Along the sectional view in A-A sections.
In accompanying drawing, same or analogous reference represents same or analogous part.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is described in further detail.
Fig. 2 illustrates the three-dimensional signal of infrared detector structure according to an embodiment of the invention
Figure, Fig. 3 illustrate corresponding with the infrared detector structure schematic perspective view shown in Fig. 2 infrared
The structure top view of panel detector structure, wherein, the infrared detector structure includes：Substrate 5,
Main body bridge floor, infrared reflection films 7, and：Adiabatic beam 2, for supporting the main body bridge floor
It is suspended from above the substrate 5 so that the main body bridge floor is separated with the substrate 5；Connecting pole
1, for connecting the substrate 5 with the adiabatic beam 2；Wherein, the substrate 5 is towards the master
There are on the end face of body bridge floor infrared reflection films 7, the main body bridge floor includes electrode film figure
3 and thermosensitive film figure 4, the electrode film figure 3 is included respectively by comb teeth-shaped figure constitution
Positive pole figure and the comb of negative pole figure, the positive pole figure and negative pole figure be staggered, it
Between form the bar-shaped zone for bending back and forth, the bar-shaped zone includes thermosensitive film region and through hole
Region 6, wherein, the via regions are located at the bending place of the bar-shaped zone, by the temperature-sensitive
Thin membrane regions 4 are divided into multiple independent rectangular regions.
Here, thermosensitive film can be made up of materials such as non-crystalline silicon, amorphous germanium silicon, vanadium oxides.
Here, electrode film can absorb infra-red radiation, its can by titanium (Ti), titanium nitride (TiN),
The materials such as tantalum nitride (TaN) are made.
Here, adiabatic beam 2 is used for adiabatic and forms electrical readout loop, it is thin by electrode film and temperature-sensitive
Film is built up, or only includes electrode film.Preferably, the adiabatic beam is also thin comprising medium
Film.Here, the dielectric film can be formed by materials such as silicon oxide, silicon nitrides.
Here, the substrate 5 is the silicon substrate comprising reading circuit or other Semiconductor substrates.This
Art personnel should be understood that above-mentioned substrate 5 is merely illustrative, and other are existing or may go out from now on
Existing substrate 5 is such as applicable to the present invention, within also should being included in the scope of the present invention, and
Here is incorporated herein by reference.In a particular embodiment, the reading circuit of substrate 5 is produced
Read current, the electric current is by adiabatic beam 2 and main body bridge floor, adiabatic beam 2 and connecting pole 1 one
Play the return passage of the reading circuit as substrate 5.
Here, the main body bridge floor is made up of electrode film and thermosensitive film between adiabatic beam 2,
It is variously-shaped that its shape includes but is not limited to rectangle, square etc..Preferably, the main body
Bridge floor also includes dielectric film.Here, the dielectric film can be by materials such as silicon oxide, silicon nitrides
Formed.
Here, the connecting pole 1 can be by mode and the substrates 5 such as mechanical connection, welding
And the adiabatic beam 2 is connected.In a particular embodiment, connecting pole 1 can by such as aluminum, copper,
The conductor metal material such as titanium is made.
Preferably, the via regions are shaped as strip.
Preferably, the electrode film figure 3 and the thermosensitive film figure are overlapped and are protected about 4
Hold electrical contact, the electrode film for forming the electrode film figure 3 can be located at that to form the temperature-sensitive thin
The lower section of the thermosensitive film of film pattern 4, may be alternatively located at the top of the thermosensitive film.
Preferably, the comb teeth-shaped figure of positive pole figure and negative pole figure is constituted for single side comb teeth
The comb teeth-shaped figure of comb teeth-shaped figure and/or bilateral comb.
For purposes of illustration only, here, being only located at the electrode film for forming the electrode film figure 3
As a example by the top situation of the thermosensitive film for forming the thermosensitive film figure 4, illustrate that the present invention's is red
External detector structure, such as Fig. 2/Fig. 3/Fig. 4.
Specifically, as shown in figure 3, constituting the comb teeth-shaped figure of positive pole figure and negative pole figure
For the comb teeth-shaped figure of single side comb teeth, the diagonal line hatches part in Fig. 3 is positive pole figure or negative pole
Figure, and dotted portion is correspondingly negative pole figure or positive pole figure, positive pole figure and negative pole figure
The comb of shape is staggered, between form the bar-shaped zone for bending back and forth, the bar-shaped zone comprising heat
Sensitive film region and via regions 6, wherein, the via regions 6 are located at the bar-shaped zone
Bending place, be multiple independent rectangular regions by the thermosensitive film region segmentation.Here,
The setting cut-out electrode film of via regions is two parts of both positive and negative polarity, reduces Infrared Detectorss
Thermal capacitance, advantageously reduces time constant, is also beneficial to discharge membrane stress；On the other hand, through hole
Thermosensitive film between positive and negative electrode is also divided into the rectangle of multiple rules in region, in parallel
The effective resistance of the infrared detector structure of the present invention of composition, due to these rectangular heat sensitive films
The electrode film on both sides is parallel to each other so that electric current, is kept away uniformly through thermosensitive film by electrode film
Point discharge and uneven electric current are exempted from；Additionally, electrode film it is above-mentioned be distributed with beneficial to absorb it is red
External radiation；And, the infrared detector structure of the present invention is simple, only comprising necessary critesistor
Thin film and resistive film layer, process is simple low cost.
Preferably, the present invention can also arbitrarily adjust the geometry of critesistor live part, with suitable
For the thermo-sensitive material of different resistivity.Electrode film be distributed with beneficial to absorb infra-red radiation.
In a preferred embodiment, constitute the comb teeth-shaped figure of positive pole figure and negative pole figure
For the mixing comb teeth-shaped of the comb teeth-shaped figure constitution of the comb teeth-shaped figure and bilateral comb of single side comb teeth
Figure, as shown in figure 4, via regions 6 are arranged in same location based on same principle, to more
Complicated staggered electrode configuration realizes the optimization of CURRENT DISTRIBUTION.
Present invention additionally comprises preparing the method flow of infrared detector structure as shown in Figure 2.Specifically
Ground, first, deposits infrared reflection films on substrate；Then, it is determined that the infrared reflection films
Position and the infrared reflection films beyond removing the position；In step a, in the lining
The deposition at bottom has on the end face of the infrared reflection films and coats sacrificial layer material, to form sacrifice
Layer；In stepb, the connection for the infrared detector structure is formed on the sacrifice layer
The groove of post；In step c, on the sacrifice layer and in the groove, deposited conductive metal is thin
Film, and the conductor metal thin film beyond the groove location is removed, with by the conductor metal
Thin film constitutes the connecting pole；In step d, the depositing electrode thin film on the sacrifice layer；Connect
, it is determined that the position of the electrode film figure formed by the electrode film beyond removing the position
The electrode film, wherein, the electrode film figure is included respectively by comb teeth-shaped figure constitution
Positive pole figure and the comb of negative pole figure, the positive pole figure and negative pole figure be staggered, it
Between form the bar-shaped zone for bending back and forth；In step e, have described in the formation of the sacrifice layer
Thermosensitive film is deposited on the end face of electrode film figure；In step f, the infrared acquisition is determined
The correspondence position of the adiabatic beam, main body bridge floor and through hole of device structure, removes outside the correspondence position
The electrode film, the thermosensitive film, to form the adiabatic beam, the main body bridge floor and institute
Through hole is stated, wherein, the adiabatic beam is used to support the main body bridge floor to be suspended from above the substrate,
And be connected with the substrate by the connecting pole, the main body bridge floor includes the electrode film figure
Shape and the thermosensitive film figure formed by the thermosensitive film, the via regions are located at the bar shaped
The bending place in region, is multiple independent rectangular regions by thermosensitive film region segmentation；In step
In g, the sacrificial layer material is removed, to obtain the infrared detector structure, wherein, it is described
There is space between main body bridge floor and the substrate.
Specifically, first, infrared reflection films are deposited on substrate.
Then, it is determined that the position of the infrared reflection films described infrared beyond removing the position
Reflective film.For example, using graphics art method, drawn on substrate 5 as shown in Figure 2 first
The position of infrared reflection films 7；Then, beyond removing the position by methods such as photoetching, corrosion
The infrared reflection films, to form infrared reflection films layer.
In step a, have on the end face of the infrared reflection films in the deposition of the substrate and coat
Sacrificial layer material, to form sacrifice layer.For example, connect example, substrate 5 as shown in Figure 2 it is heavy
Accumulate to have on the end face of the infrared reflection films 7 and coat sacrificial layer material, to form sacrifice layer.
This, the sacrificial layer material is including but not limited to such as polyimides (PI) (such as solubility PI), nothing
Setting silicon (a-Si) etc..
In stepb, the connection for the infrared detector structure is formed on the sacrifice layer
The groove of post.For example, example is connected, using graphics art method, is drawn first as shown in Figure 2
The position of connecting pole on substrate 5；Then, removed on the position by methods such as photoetching, corrosion
Sacrifice layer, to form the groove needed for the connecting pole 1 of infrared detector structure as shown in Figure 2.
In step c, deposited conductive metal thin film on the sacrifice layer and in the groove, and
The conductor metal thin film beyond the groove location is removed, with by the conductor metal thin film structure
Into the connecting pole.For example, example is connected, deposited conductor on the sacrifice layer and in the groove
Metallic film, then using graphics art method, removes the conductor beyond the groove location
Metallic film, to be constituted connecting pole 1 as shown in Figure 2 by the conductor metal thin film.Here,
The conductor metal thin film can be the thin film that the conductor metal such as aluminum, copper, titanium material is formed.
In step d, the depositing electrode thin film on the sacrifice layer.Here, electrode film can be with
Infra-red radiation is absorbed, which can be by materials such as titanium (Ti), titanium nitride (TiN), tantalum nitrides (TaN)
Make.
It is then determined the position of the electrode film figure formed by the electrode film removing the position
The electrode film beyond putting, wherein, the electrode film figure is included respectively by comb teeth-shaped figure
Positive pole figure and the comb staggered row of negative pole figure, the positive pole figure and negative pole figure that shape is constituted
Row, between form the bar-shaped zone for bending back and forth.For example, using graphics art method, draw first
Go out electrode film figure 3 as shown in Figure 2, now, the electrode film of adiabatic Liang2Chu is to retain
's；Then, the position of electrode film figure 3 and adiabatic beam are removed by methods such as photoetching, corrosion
The electrode film beyond position at 2.Now, electrode film figure 3 is included respectively by comb teeth-shaped
The comb of the positive pole figure and negative pole figure of figure constitution, the positive pole figure and negative pole figure interlocks
Arrangement, between form the bar-shaped zone for bending back and forth.
In step e, have on the end face of the electrode film figure in the formation of the sacrifice layer and sink
Accumulated heat sensitive film.
In step f, adiabatic beam, main body bridge floor and the through hole of the infrared detector structure are determined
Correspondence position, remove the electrode film outside the correspondence position, the thermosensitive film, with
The adiabatic beam, the main body bridge floor and the via regions are formed, wherein, the adiabatic beam is used
It is suspended from above the substrate in the support main body bridge floor, and passes through the connecting pole and the substrate
It is connected, the main body bridge floor includes the electrode film figure and the heat formed by the thermosensitive film
Sensitive film figure, the via regions are located at the bending place of the bar-shaped zone, by thermosensitive film area
Regional partition is multiple independent rectangular regions.For example, using graphics art method, draw first
The correspondence position of adiabatic beam, main body bridge floor and through hole as shown in Figure 2；Then, by photoetching,
The electrode film, the thermosensitive film outside the methods such as the corrosion removal correspondence position, with shape
Into adiabatic beam 2 as shown in Figure 2, main body bridge floor and via regions 6, wherein, adiabatic beam 2 is used
It is suspended from above substrate 5 in the support main body bridge floor, and is connected with substrate 5 by connecting pole 1,
The main body bridge floor includes the electrode film figure and the temperature-sensitive that formed by the thermosensitive film is thin
Film pattern 4, via regions 6 are located at the bending place of the bar-shaped zone, by thermosensitive film region point
It is segmented into multiple independent rectangular regions.
In step g, the sacrificial layer material is removed, to obtain the infrared detector structure,
Wherein, there is space between the main body bridge floor and the substrate, such as by oxygen plasma etching side
Method removes the sacrificial layer material, discharges the infrared detector structure, to obtain as shown in Figure 2
Infrared detector structure, wherein, there is space between main body bridge floor and substrate 5.
Preferably, the method, can also first in sacrifice layer before depositing electrode thin film on sacrifice layer
Upper deposition first medium thin film；Then, in step d, deposit on the first medium thin film
Electrode film；Have on the end face of the electrode film figure in the formation of the sacrifice layer and deposit temperature-sensitive
After thin film, second medium thin film is deposited on the thermosensitive film；Then, in step f,
Determine the correspondence position of the adiabatic beam, main body bridge floor and through hole of the infrared detector structure, remove
The first medium thin film, the electrode film, the thermosensitive film outside the correspondence position and
The second medium thin film, to form the adiabatic beam, the main body bridge floor and the through hole, its
In, the adiabatic beam is used to support the main body bridge floor to be suspended from above the substrate, and by described
Connecting pole is connected with the substrate, and the main body bridge floor includes the electrode film figure and by described
The thermosensitive film figure that thermosensitive film is formed, the via regions are located at the bending of the bar-shaped zone
Place, is multiple independent rectangular regions by thermosensitive film region segmentation.The infrared spy for now being formed
The main body bridge floor for surveying device structure further comprises first medium thin film and second medium thin film, be conducive to thin
Membrane stress is balanced.
Preferably, first medium thin film and second medium thin film can be by materials such as silicon oxide, silicon nitrides
Formed.
Here, deposit thermosensitive film after first depositing electrode thin film more than defining as shown in Figure 2
Infrared detector structure.
Present invention additionally comprises preparing another kind of method stream of infrared detector structure as shown in Figure 2
Journey.Specifically, first, infrared reflection films are deposited on substrate；Then, it is determined that described infrared
The position of reflective film the infrared reflection films beyond removing the position；In step,
Have on the end face of the infrared reflection films in the deposition of the substrate and coat sacrificial layer material, with shape
Into sacrifice layer；In stepb, formed for the infrared detector structure on the sacrifice layer
Connecting pole groove；In step C, deposited conductor on the sacrifice layer and in the groove
Metallic film, and the conductor metal thin film beyond the groove location is removed, to be led by described
Body metallic film constitutes the connecting pole；In step D, on the sacrifice layer, deposition temperature-sensitive is thin
Film；In step E, the depositing electrode thin film on the thermosensitive film；It is then determined by described
The position of the electrode film figure that electrode film the is formed electrode beyond removing the position is thin
Film, and thermosensitive film region is formed, wherein, the electrode film figure is included respectively by comb teeth-shaped
The comb of the positive pole figure and negative pole figure of figure constitution, the positive pole figure and negative pole figure interlocks
Arrangement, between form the bar-shaped zone for bending back and forth；In step F, the infrared acquisition is determined
The correspondence position of the adiabatic beam, main body bridge floor and through hole of device structure, removes outside the correspondence position
The electrode film, the thermosensitive film, to form the adiabatic beam, the main body bridge floor, institute
Through hole and thermosensitive film figure are stated, wherein, the adiabatic beam is used to support the main body bridge floor to be suspended from
Above the substrate, and it is connected with the substrate by the connecting pole, the main body bridge floor is included
The electrode film figure and thermosensitive film figure, the via regions are located at the bar-shaped zone
Bending place, is multiple independent rectangular regions by the thermosensitive film region segmentation；In step G
In, the sacrificial layer material is removed, to obtain the infrared detector structure, wherein, the master
There is space between body bridge floor and the substrate.
Here, it should be noted that the technique for first depositing depositing electrode thin film after thermosensitive film above
Method is similar with the process that thermosensitive film is deposited after aforementioned first depositing electrode thin film, is simple and clear rising
See, will not be described here, and be incorporated herein by reference.
It is obvious to a person skilled in the art that the invention is not restricted to above-mentioned one exemplary embodiment
Details, and without departing from the spirit or essential characteristics of the present invention, can be with others
Concrete form realizes the present invention.Which point therefore, no matter from the point of view of, embodiment all should be regarded as
It is exemplary, and be it is nonrestrictive, the scope of the present invention by claims rather than on
Bright restriction is stated, it is intended that by the institute in the implication and scope of the equivalency of claim that falls
Change and be included in the present invention.Any reference in claim should not be considered as restriction institute
The claim being related to.Furthermore, it is to be understood that " including " word is not excluded for other units or step, odd number
It is not excluded for plural number.The multiple units stated in device claim or device can also be by a units
Or device is realized by software or hardware.The first, the second grade word be used for represent title, and
It is not offered as any specific order.
Claims (11)
1. a kind of infrared detector structure, including：Substrate, main body bridge floor, and：
Adiabatic beam, for supporting the main body bridge floor to be suspended from above the substrate so that the main body bridge floor is separated with the substrate；
Connecting pole, for connecting the substrate with the adiabatic beam；
Wherein, the substrate has infrared reflection films towards on the end face of the main body bridge floor, the main body bridge floor includes electrode film figure and thermosensitive film figure, the electrode film figure includes positive pole figure and negative pole figure respectively by comb teeth-shaped figure constitution, the comb of the positive pole figure and negative pole figure is staggered, between form the bar-shaped zone for bending back and forth, the bar-shaped zone includes thermosensitive film region and via regions, wherein, the via regions are located at the bending place of the bar-shaped zone, it is multiple independent rectangular regions by the thermosensitive film region segmentation.
2. infrared detector structure according to claim 1, wherein, the electrode film figure and the thermosensitive film figure are overlapped up and down and keep electrical contact, the electrode film for forming the electrode film figure can be located at the lower section of the thermosensitive film to form the thermosensitive film figure, may be alternatively located at the top of the thermosensitive film.
3. infrared detector structure according to claim 1 and 2, wherein, comb teeth-shaped figure of the comb teeth-shaped figure for the comb teeth-shaped figure and/or bilateral comb of single side comb teeth.
4. infrared detector structure according to any one of claim 1 to 3, wherein, the thermosensitive film in the plurality of independent rectangular region forms the critesistor of the infrared detector structure in parallel.
5. infrared detector structure according to any one of claim 1 to 4, wherein, the main body bridge floor also includes dielectric film.
6. a kind of non-refrigerated infrared detector, wherein, the non-refrigerated infrared detector includes the infrared detector structure any one of claim 1 to 5.
7. a kind of infrared thermoviewer, wherein, the infrared thermoviewer includes the infrared detector structure as any one of claim 1 to 5.
8. a kind of focal plane arrays (FPA), wherein, the focal plane arrays (FPA) includes the array that any one or more described infrared detector structure is formed in claim 1 to 5.
9. a kind of method for preparing infrared detector structure as claimed in claim 1, wherein, the method is comprised the following steps：
- infrared reflection films are deposited on substrate；
- determine the position of the infrared reflection films and the infrared reflection films beyond removing the position；
A has on the end face of the infrared reflection films in the deposition of the substrate and coats sacrificial layer material, to form sacrifice layer；
B forms the groove of the connecting pole for the infrared detector structure on the sacrifice layer；
C deposited conductive metal thin film on the sacrifice layer and in the groove, and the conductor metal thin film beyond the groove location is removed, to be constituted the connecting pole by the conductor metal thin film；
D depositing electrode thin film on the sacrifice layer；
- determine the position of electrode film figure formed by the electrode film and the electrode film beyond removing the position, wherein, the electrode film figure includes positive pole figure and negative pole figure respectively by comb teeth-shaped figure constitution, the comb of the positive pole figure and negative pole figure is staggered, between form the bar-shaped zone for bending back and forth；
E has on the end face of the electrode film figure in the formation of the sacrifice layer and deposits thermosensitive film；
F determines the adiabatic beam of the infrared detector structure, the correspondence position of main body bridge floor and through hole, remove the electrode film outside the correspondence position, the thermosensitive film, to form the adiabatic beam, the main body bridge floor and the via regions, wherein, the adiabatic beam is used to support the main body bridge floor to be suspended from above the substrate, and be connected with the substrate by the connecting pole, the main body bridge floor includes the electrode film figure and the thermosensitive film figure formed by the thermosensitive film, the via regions are located at the bending place of the bar-shaped zone, it is multiple independent rectangular regions by thermosensitive film region segmentation；
G removes the sacrificial layer material, to obtain the infrared detector structure, wherein, there is space between the main body bridge floor and the substrate.
10. method according to claim 9, wherein, the method also includes：
- first medium thin film is deposited on the sacrifice layer；
Wherein, step d includes：
- on the first medium thin film depositing electrode thin film；
Wherein, the method also includes：
- second medium thin film is deposited on the thermosensitive film；
Wherein, step f includes：
Determine the adiabatic beam of the infrared detector structure, the correspondence position of main body bridge floor and through hole, remove the first medium thin film outside the correspondence position, the electrode film, the thermosensitive film and the second medium thin film, to form the adiabatic beam, the main body bridge floor and the through hole, wherein, the adiabatic beam is used to support the main body bridge floor to be suspended from above the substrate, and be connected with the substrate by the connecting pole, the main body bridge floor includes the electrode film figure and the thermosensitive film figure formed by the thermosensitive film, the via regions are located at the bending place of the bar-shaped zone, it is multiple independent rectangular regions by thermosensitive film region segmentation.
A kind of 11. methods for preparing infrared detector structure as claimed in claim 1, wherein, the method is comprised the following steps：
- infrared reflection films are deposited on substrate；
- determine the position of the infrared reflection films and the infrared reflection films beyond removing the position；
A has on the end face of the infrared reflection films in the deposition of the substrate and coats sacrificial layer material, to form sacrifice layer；
B forms the groove of the connecting pole for the infrared detector structure on the sacrifice layer；
C deposited conductive metal thin film on the sacrifice layer and in the groove, and the conductor metal thin film beyond the groove location is removed, to be constituted the connecting pole by the conductor metal thin film；
D deposits thermosensitive film on the sacrifice layer；
E depositing electrode thin film on the thermosensitive film；
- determine the position of electrode film figure formed by the electrode film and the electrode film beyond removing the position, and form thermosensitive film region, wherein, the electrode film figure includes positive pole figure and negative pole figure respectively by comb teeth-shaped figure constitution, the comb of the positive pole figure and negative pole figure is staggered, between form the bar-shaped zone for bending back and forth；
F determines the adiabatic beam of the infrared detector structure, the correspondence position of main body bridge floor and through hole, remove the electrode film outside the correspondence position, the thermosensitive film, to form the adiabatic beam, the main body bridge floor, the via regions and thermosensitive film figure, wherein, the adiabatic beam is used to support the main body bridge floor to be suspended from above the substrate, and be connected with the substrate by the connecting pole, the main body bridge floor includes the electrode film figure and thermosensitive film figure, the via regions are located at the bending place of the bar-shaped zone, it is multiple independent rectangular regions by the thermosensitive film region segmentation；
G removes the sacrificial layer material, to obtain the infrared detector structure, wherein, there is space between the main body bridge floor and the substrate.
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| CN113447144A (en) * | 2021-06-25 | 2021-09-28 | 北京北方高业科技有限公司 | Non-refrigeration infrared detector adaptive to temperature adjustment |
| CN113659015A (en) * | 2021-09-13 | 2021-11-16 | 杭州海康微影传感科技有限公司 | Infrared detector, preparation method thereof and infrared detection system |
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