CN106609358A - Chemical vapor deposition device and cleaning method thereof - Google Patents

Chemical vapor deposition device and cleaning method thereof Download PDF

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Publication number
CN106609358A
CN106609358A CN201510704688.6A CN201510704688A CN106609358A CN 106609358 A CN106609358 A CN 106609358A CN 201510704688 A CN201510704688 A CN 201510704688A CN 106609358 A CN106609358 A CN 106609358A
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CN
China
Prior art keywords
rotary shaft
gas extraction
ring
vapor deposition
chemical vapor
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Granted
Application number
CN201510704688.6A
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Chinese (zh)
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CN106609358B (en
Inventor
幸沛锦
范文远
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Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN201510704688.6A priority Critical patent/CN106609358B/en
Publication of CN106609358A publication Critical patent/CN106609358A/en
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Publication of CN106609358B publication Critical patent/CN106609358B/en
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Abstract

The invention discloses a chemical vapor deposition device and a cleaning method thereof. Multiple cleaning parts are arranged in a gas extraction part so that the multiple cleaning parts can correspond to positions of multiple gas extracting holes of the gas extraction part correspondingly; and each cleaning part is connected with a flow limiting ring. When the flow limiting ring moves vertically, the multiple cleaning parts can be driven to move, and therefore doctor blades in the cleaning parts are driven to rotate so as to remove sediment deposited in the gas extracting holes, and the sediment is brought to the bottom of the gas extraction part to maintain cleanliness and smoothness of the gas extracting holes. According to the chemical vapor deposition device and the cleaning method thereof, the work efficiency of the chemical vapor deposition device is improved, the demounting cleaning time of the chemical vapor deposition device in each time is prolonged, and the use cost of the chemical vapor deposition device is lowered.

Description

A kind of chemical vapor deposition unit and its clean method
Technical field
The present invention relates to field of semiconductor processing, and in particular to a kind of chemical vapor deposition unit and its clean method.
Background technology
Current industrial widely used chemical vapor depsotition equipment, heating element heater below silicon wafer carrier with big turning arm and silicon wafer carrier, participate in reaction gas flow through wafer because lower section heat and reactive deposition, residual gas by exhaust apparatus autoreaction chamber discharge.Exhaust apparatus has the gas stream and stable reaction desired gas pressure of control reaction chamber, it is necessary to keep the unobstructed of exhaust outlet as far as possible, the condition in reaction chamber could be kept homogeneous and then the uniformity of wafer process is maintained.So the parasitic reaction thing of deposition can be cleaned and be removed with regular maintenance exhaust outlet, and then time and number of times that reaction chamber is cleared up in dismounting are reduced, be chemical vapor deposition(Chemical Vapor Deposition, abbreviation CVD)The optimization direction that in the industry everybody has been working hard.
The content of the invention
It is an object of the invention to provide a kind of chemical vapor deposition unit and its clean method, by arranging multiple cleaning members in gas extraction part so that multiple cleaning members are corresponding respectively with multiple pumping hole sites of gas extraction part;And each cleaning member is connected with restrictor ring.Multiple cleaning members can be driven when restrictor ring is moved up and down to move, so as to drive cleaning member in scraping blade rotation so as to remove the sediment being deposited on aspirating hole, and bring sediment into gas extraction feature bottom, keep the cleaning of aspirating hole unobstructed.The present invention improves the operating efficiency of chemical vapor deposition unit, extends the dismounting clearance time of each chemical vapor deposition unit, reduces the use cost of chemical vapor deposition unit.
In order to achieve the above object, the present invention is achieved through the following technical solutions:
A kind of chemical vapor deposition unit, the device is included:
Reaction chamber;
Air inlet component, is arranged on the reaction chamber top, and communicates with inside the reaction chamber;
Rotary shaft, is arranged on the reaction chamber inner bottom part;
Pallet, is arranged on the rotary shaft top, and is oppositely arranged with the air inlet component;
Heater block, is circumferentially positioned at the rotary shaft, pallet lower section;
Restrictor ring, is arranged on the pallet periphery;
Gas extraction part, is arranged on the reaction chamber inner bottom part, and is circumferentially positioned at the heater periphery;The gas extraction part is communicated with outside, and the gas extraction ring top cover is provided with multiple aspirating holes;
Multiple cleaning members, each described cleaning member is included:One gear unit and scraping blade;The gear unit also includes the first rotary shaft, the second rotary shaft, and the scraping blade is arranged in first rotary shaft, second rotary shaft;
The gear unit also includes crankshaft structure, and the crankshaft structure includes a pair of turning arms, a first connecting rods;
The cleaning member also includes and the trace extended downwardly on the restrictor ring that the first connecting rod is connected with the trace, and the first connecting rod is connected respectively by turning arm described in a pair with first rotary shaft, the second rotary shaft;
The position of the scraping blade is corresponding with the corresponding pumping hole site, and when the restrictor ring moves up and down, the trace drives scraping blade on the gear unit along rotary shaft rotation, the scraping blade the is inswept aspirating hole.
The gas extraction part is included:
Gas extraction ring, in a ring, is arranged on the reaction chamber inner bottom part, and is circumferentially positioned at the heater periphery;
Gas extraction ring top cover, in a ring, is correspondingly arranged at the gas extraction ring top.
The gas extraction ring section takes the shape of the letter U;The gas extraction is equipped with a pair and collects hole, and the pair of hole of collecting is symmetricly set on the gas extraction ring bottom;
The gas extraction part is collected by this Dui and communicated outside Kong Yu.
In the transmission bar unit:
One end of first rotary shaft is connected with a madial wall of the gas extraction ring, and the other end of first rotary shaft is connected with the crankshaft structure;The scraping blade is arranged in first rotary shaft;
One end of second rotary shaft is connected with another madial wall of the gas extraction ring, and the other end of second rotary shaft is connected with the crankshaft structure;
First rotary shaft is in a straight line with second rotary shaft.
In the crankshaft structure:
One end of first rotary shaft is connected with a madial wall of the reaction chamber, and the other end of first rotary shaft is connected with the crankshaft structure;The scraping blade is arranged in first rotary shaft;
One end of second rotary shaft is connected with the homonymy madial wall of the reaction chamber, and the other end of second rotary shaft is connected with the crankshaft structure;
First rotary shaft is in a straight line with second rotary shaft.
In the crankshaft structure:
A pair symmetrically arranged turning arms, the lateral wall bottom of a turning arm is connected with first rotary shaft;Second rotary shaft connection described in the lateral wall bottom of another turning arm;
First connecting rod, is arranged between the pair of turning arm top.
The trace is included:
Ring is interlocked, is nested with the first connecting rod;
Second connecting rod, one end of the second connecting rod is connected with the gearing ring, and the other end of the second connecting rod is connected with the restrictor ring.
The length with diameter greater than the second connecting rod of the turning arm.
The initial position of the second connecting rod is in an acute angle with vertical guide.
A kind of cleaning member for chemical vapor deposition unit, the chemical vapor deposition unit is included:Reaction chamber, located at the top air inlet component of reaction chamber, rotary shaft, pallet inside reaction chamber, heater block, restrictor ring, and located at the gas extraction part of reaction chamber inner bottom part;
The cleaning member is arranged in the reaction chamber, and is connected with restrictor ring;The cleaning member is included:
One gear unit and scraping blade;The gear unit also includes the first rotary shaft, the second rotary shaft, and the scraping blade is arranged in first rotary shaft, second rotary shaft;
The gear unit also includes crankshaft structure, and the crankshaft structure includes a pair of turning arms, a first connecting rods;
The cleaning member also includes and the trace extended downwardly on the restrictor ring that the first connecting rod is connected with the trace, and the first connecting rod is connected respectively by turning arm described in a pair with first rotary shaft, the second rotary shaft;
The position of the scraping blade is corresponding with the corresponding pumping hole site, and when the restrictor ring moves up and down, the trace drives scraping blade on the gear unit along rotary shaft rotation, the scraping blade the is inswept aspirating hole.
The gas extraction part is included:
Gas extraction ring, in a ring, is arranged on the reaction chamber inner bottom part, and is circumferentially positioned at the heater periphery;
Gas extraction ring top cover, in a ring, is correspondingly arranged at the gas extraction ring top, and the gas extraction ring top cover is provided with aspirating hole.
The gas extraction ring section takes the shape of the letter U;The gas extraction is equipped with a pair and collects hole, and the pair of hole of collecting is symmetricly set on the gas extraction ring bottom;
The gas extraction part is collected by this Dui and communicated outside Kong Yu.
In the transmission bar unit:
First rotary shaft, one end of first rotary shaft is connected with a madial wall of the gas extraction ring, and the other end of first rotary shaft is connected with the crankshaft structure;The scraping blade is arranged in first rotary shaft;
Second rotary shaft, one end of second rotary shaft is connected with another madial wall of the gas extraction ring, and the other end of second rotary shaft is connected with the crankshaft structure;
First rotary shaft is in a straight line with second rotary shaft.
In the crankshaft structure:
One end of first rotary shaft is connected with a madial wall of the reaction chamber, and the other end of first rotary shaft is connected with the crankshaft structure;The scraping blade is arranged in first rotary shaft;
One end of second rotary shaft is connected with the homonymy madial wall of the reaction chamber, and the other end of second rotary shaft is connected with the crankshaft structure;
First rotary shaft is in a straight line with second rotary shaft.
In the crankshaft structure:
The lateral wall bottom of one turning arm is connected with first rotary shaft;Second rotary shaft connection described in the lateral wall bottom of another turning arm;
First connecting rod, is arranged between the pair of turning arm top.
The trace is included:
Ring is interlocked, is arranged on the first connecting rod;
Second connecting rod, one end of the second connecting rod is connected with the gearing ring, and the other end of the second connecting rod is connected with the restrictor ring.
The length with diameter greater than the second connecting rod of the turning arm.
The initial position of the second connecting rod is in an acute angle with vertical guide.
A kind of clean method of chemical vapor deposition unit, the method is comprised the steps of:
Multiple cleaning members are set in the gas extraction part, or multiple cleaning members are set in reaction chamber;
When the restrictor ring is moved, multiple cleaning members are driven to rotate;
Each described cleaning member contacts with the corresponding aspirating hole, to clean the aspirating hole.
According to the quantity of aspirating hole in the gas extraction part, the quantity of the cleaning member is set;
The scraping blade position of each cleaning member is corresponded with the corresponding pumping hole site;
All of cleaning member is set in the gas extraction ring or is set in the reaction chamber;It is in an acute angle between the initial position and vertical guide of the second connecting rod when guaranteeing original state simultaneously.
When the restrictor ring is moved up and down, all of trace is driven to move up and down;
Each described trace drives connected crankshaft structure to rotate, so as to drive scraping blade to rotate.
When each described scraping blade is rotated in the gas extraction part, the scraping blade is fully contacted with the corresponding aspirating hole, the sediment being deposited on the aspirating hole is removed, and sediment is brought in the gas extraction ring that section takes the shape of the letter U, realize the cleaning of all aspirating holes.
The present invention has compared with prior art advantages below:
A kind of chemical vapor deposition unit disclosed by the invention and its clean method, by arranging multiple cleaning members in gas extraction part so that multiple cleaning members are corresponding respectively with multiple pumping hole sites of gas extraction part;And each cleaning member is connected with restrictor ring.Multiple cleaning members can be driven when restrictor ring is moved up and down to move, so as to drive cleaning member in scraping blade rotation so as to remove the sediment being deposited on aspirating hole, and bring sediment into gas extraction feature bottom, keep the cleaning of aspirating hole unobstructed.The dismounting clearance time of each chemical vapor deposition unit is extended, the use cost of chemical vapor deposition unit is reduced.
Description of the drawings
Fig. 1 is a kind of overall structure diagram of chemical vapor deposition unit of the invention.
Fig. 2 is a kind of one of partial structural diagram of chemical vapor deposition unit of the invention.
Fig. 3 is the two of the partial structural diagram of a kind of chemical vapor deposition unit of the invention.
Fig. 4 is the three of the partial structural diagram of a kind of chemical vapor deposition unit of the invention.
Fig. 5 is a kind of overall flow figure of chemical vapor deposition unit clean method of the invention.
Specific embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
Embodiment 1
As shown in Figure 1-Figure 3, a kind of chemical vapor deposition unit, the device is included:Reaction chamber 1, air inlet component 2, rotary shaft 3, pallet 5, heater block 4, restrictor ring 6, gas extraction part 7 and multiple cleaning members 8.
Wherein, air inlet component 2 is arranged on the top of reaction chamber 1, and communicates with inside the reaction chamber 1.Rotary shaft 3 is arranged on the inner bottom part of reaction chamber 1.Pallet 5 is arranged on the top of rotary shaft 3, and is oppositely arranged with air inlet component 2.Heater block 4 is circumferentially positioned at rotary shaft 3, the periphery of pallet 5.Restrictor ring 6 is arranged on pallet 5, the periphery of heater 4.Gas extraction part 7 is arranged on the inner bottom part of reaction chamber 1, and is circumferentially positioned at the periphery of heater 4;Gas extraction part 7 is communicated with outside.Multiple cleaning members 8 are connected respectively with restrictor ring 6.
As shown in figure 1, heater 4 is included:Heater 41, heater insulation screen 42.Wherein, heater 41 is arranged on the bottom of pallet 5, and heater insulation screen 42 is circumferentially positioned at pallet 5 and the periphery of rotary shaft 3.
In chemical vapor deposition unit use, process gas is entered in reaction chamber 1 by air inlet component 2, and the wafer carried with the pallet 5 for being positioned over the rotary-top of rotary shaft 3 occurs chemical reaction.Now, pallet 5 is heated by heater 41.
Process gas the surface of pallet 5 be uniformly distributed to MOCVD techniques it is critical that.In order to ensure this crucial technological requirement, in addition to the effect of air inlet component 2, the effect of gas extraction part 7 is also very big.Gas extraction part 7 can uniformly extract the gas flowed down by pallet 5, if the air-flow extraction of gas extraction part 7 is uneven, can directly affect the air flow method on pallet 5, and then affect process results.
Thereby it is ensured that gas extraction part 7 extraction air-flow uniformity, become the invention solves the problems that a major issue.
As shown in Fig. 2 gas extraction part 7 is included:Gas extraction ring 71, gas extraction ring top cover 72.Gas extraction ring 71 in a ring, is arranged on the inner bottom part of reaction chamber 1, and is circumferentially positioned at the periphery of heater 4.Gas extraction ring top cover 72 in a ring, is correspondingly arranged at the top of gas extraction ring 71.
In the present invention, gas extraction ring top cover 72 is provided with multiple aspirating holes 721;The number of multiple aspirating holes 721 is identical with the number of multiple cleaning members 8.The section of gas extraction ring 71 takes the shape of the letter U;The gas extraction ring 71 is provided with a pair and collects hole 711, collects hole 711 and is symmetricly set on the bottom of gas extraction ring 71 for a pair;Gas extraction part 7 collects hole 711 and communicates in outside by this pair.
In the present invention, multiple aspirating holes 721 are used to be uniformly distributed the gas flow down by pallet 5;The gas flowed into by multiple aspirating holes 721 of gas extraction ring top cover 72 flows to a pair in gas extraction ring 71 and collects hole 711, and gas flows out via mouth is collected.
In metal organic chemical vapor deposition(Or claim " MOCVD ")In technique, a large amount of graininess or sheet accessory substance can be produced.Produce in air-flow of these accessory substances on pallet 5, and follow air-flow to fall on the gas extraction ring top cover 72 of gas extraction part 7, and deposit in a large number, after a period of time, deposit can block all or part of aspirating hole 721, process gas skewness is caused, MOCVD techniques is in turn resulted in unstable.
Meanwhile, in MOCVD techniques, also often there is the accident that wafer flies from pallet 5 in Jing, therefore, wafer fragment also can fall on gas extraction ring top cover 72, and aspirating hole 721 is blocked, and cause process gas skewness, in turn result in MOCVD techniques unstable.
When there is above-mentioned accident, need to stop chemical vapor deposition unit, safeguarded.Therefore, in the present invention, by increasing multiple cleaning members 8, it is ensured that whole aspirating holes 721 of gas extraction part 7 will not blockage phenomenon, it is to avoid because the chemical vapor deposition unit that the blocking of gas extraction part 7 is caused is safeguarded.
As shown in figure 3, each cleaning member 8 is included:Gear unit 81, scraping blade 82 and trace 83.Wherein, gear unit 81 may be provided between the two side of gas extraction ring 71.Scraping blade 82 is arranged on gear unit 81, and corresponding to the position of corresponding aspirating hole 721 on gas extraction ring top cover 72.The one end of trace 83 is connected with transmission bar unit 81, and the other end of trace 83 is connected with restrictor ring 6.
In the present invention, as long as can realize removing the deposit in correspondence aspirating hole 721, scraping blade 82 can be in arbitrary shape, while can be solid sheet(Block)Or hollow frame.Meanwhile, the axial location of scraping blade 82 can be in same plane position with corresponding aspirating hole 721, or in upper and lower, the forward and backward position of correspondence aspirating hole 721.
In the present invention, gear unit 81 can also be provided on the inwall of the side of reaction chamber 1.
As shown in Figure 3, Figure 4, it is driven bar unit 81 to include:Crankshaft structure 811, the first rotary shaft 812 and the second rotary shaft 813.
When gear unit 81 is arranged between the two side of gas extraction ring 71, one end of the first rotary shaft 812 is connected with a madial wall of gas extraction ring 71, and the other end of first rotary shaft 812 is connected with crankshaft structure 811;Scraping blade 82 is arranged in first rotary shaft 812.One end of second rotary shaft 813 is connected with another madial wall of gas extraction ring 71, and the other end of second rotary shaft 813 is connected with crankshaft structure 811.First rotary shaft 812 is in a straight line with the second rotary shaft 813.
When gear unit 81 is arranged on the inwall of the side of reaction chamber 1, one end of the first rotary shaft 812 is connected with a madial wall of reaction chamber 1, and the other end of first rotary shaft 812 is connected with crankshaft structure 811;Scraping blade 82 is arranged in first rotary shaft 812.One end of second rotary shaft 813 is connected with the same madial wall of reaction chamber 1, and the other end of second rotary shaft 813 is connected with crankshaft structure 811.First rotary shaft 812 is in a straight line with the second rotary shaft 813.
As shown in Figure 3, Figure 4, crankshaft structure 811 is included:A pair symmetrically arranged turning arms 8111, first connecting rods 8112.The lateral wall bottom of one turning arm 8111 is connected with the first rotary shaft 812;Second rotary shaft of lateral wall bottom 813 of another turning arm 8111 connects.First connecting rod 8112 is arranged between a pair of tops of turning arm 8111.
As shown in figure 4, trace 83 is included:Interlock ring 831, second connecting rod 832.Wherein, interlock ring 831 to be nested with first connecting rod 8112.One end of second connecting rod 832 is connected with ring 831 is interlocked, and the other end of the second connecting rod 832 is connected with restrictor ring 6.
Wherein, the length with diameter greater than second connecting rod 832 of turning arm 8111.The initial position of second connecting rod 832 is in an acute angle with vertical guide.
The above-mentioned design of the present invention, be in order to ensure restrictor ring 6 move up and down when, drive second connecting rod 832 that can conveniently, coherent is moved, and so as to drive scraping blade 82 to rotate, removes the sediment in correspondence aspirating hole 721.
As shown in figure 5, chemical vapor deposition unit clean method concrete operations following steps disclosed by the invention:
S1, the multiple cleaning members 8 of setting in gas extraction part 7 or in reaction chamber 1.
According to the quantity of aspirating hole 721 in gas extraction part 7, the quantity of cleaning member 8 is set.All of cleaning member 8 is set in gas extraction ring 71 or in reaction chamber 1;The scraping blade 82 for guaranteeing each cleaning member 8 is corresponded with the position of corresponding aspirating hole 721 on gas extraction ring top cover 72.
Simultaneously, it is desirable to which the diameter of a pair of turning arms 8111 of crankshaft structure 811 is all higher than the length of second connecting rod 832.When guaranteeing original state simultaneously, the initial position and vertical guide for arranging second connecting rod 832 is in an acute angle.
S2, when restrictor ring 6 is moved, drives multiple cleaning members 8 to rotate.
When restrictor ring 6 is moved up and down, all of trace 83 is driven to move up and down;Each trace 83 drives connected crankshaft structure 811 to rotate, so as to drive scraping blade 82 to rotate.
S3, each cleaning member 8 contacts with corresponding aspirating hole 721, to clean the aspirating hole 721.
When each scraping blade 82 is rotated in gas extraction part 7 or in reaction chamber 1, the scraping blade 82 is fully contacted with corresponding aspirating hole 721, the sediment being deposited on the aspirating hole 721 is removed, and bring sediment in the gas extraction ring 71 that section takes the shape of the letter U into, realize that the cleaning of all aspirating holes 721 is unobstructed.
Embodiment 2
In chemical vapor deposition unit use, process gas is entered in reaction chamber 1 by air inlet component 2, and the wafer carried with the pallet 5 for being positioned over the rotary-top of rotary shaft 3 occurs chemical reaction.Now, pallet 5 is heated by heater 41.
Process gas the surface of pallet 5 be uniformly distributed to MOCVD techniques it is critical that.In order to ensure this crucial technological requirement, in addition to the effect of air inlet component 2, the effect of gas extraction part 7 is also very big.Gas extraction part 7 can uniformly extract the gas flowed down by pallet 5, if the air-flow extraction of gas extraction part 7 is uneven, can directly affect the air flow method on pallet 5, and then affect process results.
In metal organic chemical vapor deposition(Or claim " MOCVD ")In technique, a large amount of graininess or sheet accessory substance can be produced.Produce in air-flow of these accessory substances on pallet 5, and follow air-flow to fall on gas extraction part 7, and deposit in a large number, after a period of time, deposit can block gas extraction part 7, cause process gas skewness, in turn result in MOCVD techniques unstable.
Meanwhile, in MOCVD techniques, also often there is the accident that wafer flies from pallet 5 in Jing, therefore, wafer fragment also can fall on gas extraction part 7, and gas extraction part 7 is blocked, and cause process gas skewness, in turn result in MOCVD techniques unstable.
Thereby it is ensured that gas extraction part 7 extraction air-flow uniformity, become the invention solves the problems that a major issue.In order to solve the above problems, the invention provides a kind of cleaning member for chemical vapor deposition unit, the structure of the cleaning member, operation principle are specific as follows.
As Figure 1-Figure 4, a kind of cleaning member 8 for chemical vapor deposition unit, is arranged in chemical vapor deposition unit.The chemical vapor deposition unit is included:Reaction chamber 1, located at the top air inlet component 2 of reaction chamber 1, rotary shaft 3, pallet 5 inside reaction chamber 1, heater block 4, restrictor ring 6, and located at the gas extraction part 7 of the inner bottom part of reaction chamber 1.
As Figure 1-Figure 4, the cleaning member 8 for chemical vapor deposition unit may be disposed in gas extraction part 7, and be connected with restrictor ring 6;Cleaning member 8 may also set up in reaction chamber 1, and be connected with restrictor ring 6.
Cleaning member 8 is included:Gear unit 81, scraping blade 82 and trace 83.Wherein, gear unit 81 may be provided in gas extraction part 7 or in reaction chamber 1.Scraping blade 82 is arranged on gear unit 81;The one end of trace 83 is connected with transmission bar unit 81, and the other end of trace 83 is connected with restrictor ring 6.
In the present invention, as long as can realize removing the deposit in correspondence aspirating hole 721, scraping blade 82 can be in arbitrary shape, while can be solid sheet(Block)Or hollow frame.Meanwhile, the axial location of scraping blade 82 can be in same plane position with corresponding aspirating hole 721, or in upper and lower, the forward and backward position of correspondence aspirating hole 721.
As shown in Fig. 2 gas extraction part 7 is included:Gas extraction ring 71, gas extraction ring top cover 72.Wherein, gas extraction ring 71 in a ring, is arranged on the inner bottom part of reaction chamber 1, and is circumferentially positioned at the periphery of heater 4.Gas extraction ring top cover 72 in a ring, is correspondingly arranged at the top of gas extraction ring 71.
Wherein, gas extraction ring top cover 72 is provided with aspirating hole 721.The section of gas extraction ring 71 takes the shape of the letter U;The gas extraction ring 71 is provided with a pair and collects hole 711, collects hole 711 and is symmetricly set on the bottom of gas extraction ring 71 for a pair.Gas extraction part 7 collects hole 711 and communicates in outside by this pair.
Gear unit 81 is arranged between the two side of gas extraction ring 71, and scraping blade 82 is corresponding with the position of aspirating hole 721.
As shown in Figure 3, Figure 4, it is driven bar unit 81 to include:Crankshaft structure 811, the first rotary shaft 812 and the second rotary shaft 813.
Wherein, when transmission bar unit 81 is arranged in gas extraction part 7, one end of the first rotary shaft 812 is connected with a madial wall of gas extraction ring 71, and the other end of first rotary shaft 812 is connected with crankshaft structure 811;Scraping blade 82 is arranged in first rotary shaft 812.One end of second rotary shaft 813 is connected with another madial wall of gas extraction ring 71, and the other end of second rotary shaft 813 is connected with crankshaft structure 811.First rotary shaft 812 is in a straight line with the second rotary shaft 813.
Wherein, when transmission bar unit 81 is arranged in reaction chamber 1, one end of the first rotary shaft 812 is connected with a madial wall of reaction chamber 1, and the other end of first rotary shaft 812 is connected with crankshaft structure 811;Scraping blade 82 is arranged in first rotary shaft 812.One end of second rotary shaft 813 is connected with the same madial wall of reaction chamber 1, and the other end of second rotary shaft 813 is connected with crankshaft structure 811.First rotary shaft 812 is in a straight line with the second rotary shaft 813.
As shown in Figure 3, Figure 4, crankshaft structure 811 is included:A pair symmetrically arranged turning arms 8111, first connecting rods 8112.Wherein, the lateral wall bottom of a turning arm 8111 is connected with the first rotary shaft 812;Second rotary shaft of lateral wall bottom 813 of another turning arm 8111 connects.First connecting rod 8112 is arranged between a pair of tops of turning arm 8111.
As shown in Figure 3, Figure 4, trace 83 is included:Interlock ring 831 and second connecting rod 832.Wherein, interlock ring 831 to be arranged on first connecting rod 8112.One end of second connecting rod 832 is connected with ring 831 is interlocked, and the other end of the second connecting rod 832 is connected with restrictor ring 6.
In the present invention, the length with diameter greater than second connecting rod 832 of turning arm 8111.The initial position of second connecting rod 832 is in an acute angle with vertical guide.
In the present invention, in order to realize the requirement that process gas is evenly distributed, one or more aspirating holes 721 are set on the gas extraction ring top cover 72 of gas extraction part 7, the interior setting in gas extraction ring 71 and the quantity identical cleaning member 8 of aspirating hole 721 are then needed, and the scraping blade 82 of multiple cleaning members 8 and the position of multiple aspirating holes 721 are corresponded.
As shown in figure 5, a kind of using method of the cleaning member for chemical vapor deposition unit is specific as follows:
S1, the multiple cleaning members 8 of setting in gas extraction part 7 or in reaction chamber 1.
According to the quantity of aspirating hole 721 in gas extraction part 7, the quantity of cleaning member 8 is set.All of cleaning member 8 is set in gas extraction ring 71 or in reaction chamber 1;The scraping blade 82 for guaranteeing each cleaning member 8 is corresponded with the position of corresponding aspirating hole 721 on gas extraction ring top cover 72.
Simultaneously, it is desirable to which the diameter of a pair of turning arms 8111 of crankshaft structure 811 is all higher than the length of second connecting rod 832.When guaranteeing original state simultaneously, the initial position and vertical guide for arranging second connecting rod 832 is in an acute angle.
S2, when restrictor ring 6 is moved, drives multiple cleaning members 8 to rotate.
When restrictor ring 6 is moved up and down, all of trace 83 is driven to move up and down;Each trace 83 drives connected crankshaft structure 811 to rotate, so as to drive scraping blade 82 to rotate in gas extraction part 7.
S3, each cleaning member 8 contacts with corresponding aspirating hole 721, to clean the aspirating hole 721.
When each scraping blade 82 is rotated in gas extraction part 7 or in reaction chamber 1, the scraping blade 82 is fully contacted with corresponding aspirating hole 721, the sediment being deposited on the aspirating hole 721 is removed, and bring sediment in the gas extraction ring 71 that section takes the shape of the letter U into, realize that the cleaning of all aspirating holes 721 is unobstructed.
The present invention can effectively extend the dismounting clearance time of each chemical vapor deposition unit, and improve the operating efficiency of chemical vapor deposition unit, reduce the use cost of chemical vapor deposition unit.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that the description above is not considered as limitation of the present invention.After those skilled in the art have read the above, for various modifications and substitutions of the present invention all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (22)

1. a kind of chemical vapor deposition unit, it is characterised in that the device is included:
Reaction chamber(1);
Air inlet component(2), it is arranged on the reaction chamber(1)Top, and with the reaction chamber(1)Inside communicates;
Rotary shaft(3), it is arranged on the reaction chamber(1)Inner bottom part;
Pallet(5), it is arranged on the rotary shaft(3)Top, and with the air inlet component(2)It is oppositely arranged;
Heater block(4), it is circumferentially positioned at the rotary shaft(3), the pallet(5)Lower section;
Restrictor ring(6), it is arranged on the pallet(5)Periphery;
Gas extraction part(7), it is arranged on the reaction chamber(1)Inner bottom part, and it is circumferentially positioned at the heater(4)Periphery;The gas extraction part(7)Communicate with outside, the gas extraction ring top cover(72)It is provided with multiple aspirating holes(721);
Multiple cleaning members(8), each described cleaning member(8)Comprising:One gear unit(81)And scraping blade(82);The gear unit(81)Also include the first rotary shaft(812), the second rotary shaft(813), the scraping blade(82)It is arranged on first rotary shaft(812), second rotary shaft(813)On;
The gear unit(81)Also include crankshaft structure(811), the crankshaft structure(811)Comprising a pair of turning arms(8111), a first connecting rod(8112);
The cleaning member(8)Also include and the restrictor ring(6)On the trace that extends downwardly(83), the first connecting rod(8112)With the trace(83)It is connected, the first connecting rod(8112)By turning arm described in a pair(8111)Respectively with first rotary shaft(812), the second rotary shaft(813)Connection;
The scraping blade(82)Position and the corresponding aspirating hole(721)Position correspondence, when the restrictor ring moves up and down, the trace(83)Drive the gear unit(81)On scraping blade(82)Rotate along rotary shaft, the scraping blade the is inswept aspirating hole(721).
2. chemical vapor deposition unit as claimed in claim 1, it is characterised in that the gas extraction part(7)Comprising:
Gas extraction ring(71), in a ring, it is arranged on the reaction chamber(1)Inner bottom part, and it is circumferentially positioned at the heater(4)Periphery;
Gas extraction ring top cover(72), in a ring, it is correspondingly arranged at the gas extraction ring(71)Top.
3. chemical vapor deposition unit as claimed in claim 2, it is characterised in that the gas extraction ring(71)Section takes the shape of the letter U;The gas extraction ring(71)It is provided with a pair and collects hole(711), it is the pair of to collect hole(711)It is symmetricly set on the gas extraction ring(71)Bottom;
The gas extraction part(7)Hole is collected by this pair(711)Communicate in outside.
4. chemical vapor deposition unit as claimed in claim 2, it is characterised in that the transmission bar unit(81)In:
First rotary shaft(812)One end and the gas extraction ring(71)A madial wall connection, first rotary shaft(812)The other end and the crankshaft structure(811)Connection;The scraping blade(82)It is arranged on first rotary shaft(812)On;
Second rotary shaft(813)One end and the gas extraction ring(71)Another madial wall connection, second rotary shaft(813)The other end and the crankshaft structure(811)Connection;
First rotary shaft(812)With second rotary shaft(813)It is in a straight line.
5. chemical vapor deposition unit as claimed in claim 2, it is characterised in that the crankshaft structure(811)In:
First rotary shaft(812)One end and the reaction chamber(1)A madial wall connection, first rotary shaft(812)The other end and the crankshaft structure(811)Connection;The scraping blade(82)It is arranged on first rotary shaft(812)On;
Second rotary shaft(813)One end and the reaction chamber(1)Homonymy madial wall connection, second rotary shaft(813)The other end and the crankshaft structure(811)Connection;
First rotary shaft(812)With second rotary shaft(813)It is in a straight line.
6. the chemical vapor deposition unit described in claim 4 or 5, it is characterised in that the crankshaft structure(811)In:
A pair symmetrically arranged turning arms(8111), a turning arm(8111)Lateral wall bottom and first rotary shaft(812)Connection;Another described turning arm(8111)Lateral wall bottom described in the second rotary shaft(813)Connection;
First connecting rod(8112), it is arranged on the pair of turning arm(8111)Between top.
7. chemical vapor deposition unit as claimed in claim 6, it is characterised in that the trace(83)Comprising:
Interlock ring(831), it is nested with the first connecting rod(8112)On;
Second connecting rod(832), the second connecting rod(832)One end and the gearing ring(831)Connection, the second connecting rod(832)The other end and the restrictor ring(6)Connection.
8. chemical vapor deposition unit as claimed in claim 7, it is characterised in that the turning arm(8111)With diameter greater than the second connecting rod(832)Length.
9. chemical vapor deposition unit as claimed in claim 7, it is characterised in that the second connecting rod(832)Initial position and vertical guide be in an acute angle.
10. a kind of cleaning member for chemical vapor deposition unit, the chemical vapor deposition unit is included:Reaction chamber(1), located at reaction chamber(1)Top air inlet component(2), located at reaction chamber(1)Internal rotary shaft(3), pallet(5), heater block(4), restrictor ring(6), and located at reaction chamber(1)The gas extraction part of inner bottom part(7);
Characterized in that, the cleaning member(8)It is arranged at the reaction chamber(1)It is interior, and and restrictor ring(6)Connection;The cleaning member(8)Comprising:
One gear unit(81)And scraping blade(82);The gear unit(81)Also include the first rotary shaft(812), the second rotary shaft(813), the scraping blade(82)It is arranged on first rotary shaft(812), second rotary shaft(813)On;
The gear unit(81)Also include crankshaft structure(811), the crankshaft structure(811)Comprising a pair of turning arms(8111), a first connecting rod(8112);
The cleaning member(8)Also include and the restrictor ring(6)On the trace that extends downwardly(83), the first connecting rod(8112)With the trace(83)It is connected, the first connecting rod(8112)By turning arm described in a pair(8111)Respectively with first rotary shaft(812), the second rotary shaft(813)Connection;
The scraping blade(82)Position and the corresponding aspirating hole(721)Position correspondence, when the restrictor ring moves up and down, the trace(83)Drive the gear unit(81)On scraping blade(82)Rotate along rotary shaft, the scraping blade the is inswept aspirating hole(721).
11. cleaning members for being used for chemical vapor deposition unit as claimed in claim 10, it is characterised in that the gas extraction part(7)Comprising:
Gas extraction ring(71), in a ring, it is arranged on the reaction chamber(1)Inner bottom part, and it is circumferentially positioned at the heater(4)Periphery;
Gas extraction ring top cover(72), in a ring, it is correspondingly arranged at the gas extraction ring(71)Top, the gas extraction ring top cover(72)It is provided with aspirating hole(721).
12. cleaning members for being used for chemical vapor deposition unit as claimed in claim 10, it is characterised in that the gas extraction ring(71)Section takes the shape of the letter U;The gas extraction ring(71)It is provided with a pair and collects hole(711), it is the pair of to collect hole(711)It is symmetricly set on the gas extraction ring(71)Bottom;
The gas extraction part(7)Hole is collected by this pair(711)Communicate in outside.
13. cleaning members for being used for chemical vapor deposition unit as claimed in claim 11, it is characterised in that the transmission bar unit(81)In:
First rotary shaft(812), first rotary shaft(812)One end and the gas extraction ring(71)A madial wall connection, first rotary shaft(812)The other end and the crankshaft structure(811)Connection;The scraping blade(82)It is arranged on first rotary shaft(812)On;
Second rotary shaft(813), second rotary shaft(813)One end and the gas extraction ring(71)Another madial wall connection, second rotary shaft(813)The other end and the crankshaft structure(811)Connection;
First rotary shaft(812)With second rotary shaft(813)It is in a straight line.
14. chemical vapor deposition units as claimed in claim 11, it is characterised in that the crankshaft structure(811)In:
First rotary shaft(812)One end and the reaction chamber(1)A madial wall connection, first rotary shaft(812)The other end and the crankshaft structure(811)Connection;The scraping blade(82)It is arranged on first rotary shaft(812)On;
Second rotary shaft(813)One end and the reaction chamber(1)Homonymy madial wall connection, second rotary shaft(813)The other end and the crankshaft structure(811)Connection;
First rotary shaft(812)With second rotary shaft(813)It is in a straight line.
15. chemical vapor deposition units as described in claim 13 or 14, it is characterised in that the crankshaft structure(811)In:
One turning arm(8111)Lateral wall bottom and first rotary shaft(812)Connection;Another described turning arm(8111)Lateral wall bottom described in the second rotary shaft(813)Connection;
First connecting rod(8112), it is arranged on the pair of turning arm(8111)Between top.
16. cleaning members for being used for chemical vapor deposition unit as claimed in claim 15, it is characterised in that the trace(83)Comprising:
Interlock ring(831), it is arranged on the first connecting rod(8112)On;
Second connecting rod(832), the second connecting rod(832)One end and the gearing ring(831)Connection, the second connecting rod(832)The other end and the restrictor ring(6)Connection.
17. cleaning members for being used for chemical vapor deposition unit as claimed in claim 16, it is characterised in that the turning arm(8111)With diameter greater than the second connecting rod(832)Length.
18. cleaning members for being used for chemical vapor deposition unit as claimed in claim 16, it is characterised in that the second connecting rod(832)Initial position and vertical guide be in an acute angle.
19. a kind of clean methods of chemical vapor deposition unit, it is characterised in that the method is comprised the steps of:
In the gas extraction part(7)It is interior to set multiple cleaning members(8), or in reaction chamber(1)It is interior to set multiple cleaning members(8);
When the restrictor ring(6)When mobile, multiple cleaning members are driven(8)Rotate;
Each described cleaning member(8)With the corresponding aspirating hole(721)Contact, to clean the aspirating hole(721).
The clean method of 20. chemical vapor deposition units as claimed in claim 19, it is characterised in that according to the gas extraction part(7)Middle aspirating hole(721)Quantity, set the cleaning member(8)Quantity;
By each cleaning member(8)Scraping blade(82)Position and the corresponding aspirating hole(721)Position corresponds;
By all of cleaning member(8)It is set in the gas extraction ring(71)It is interior or be set in the reaction chamber(1)It is interior;When guaranteeing original state simultaneously, the second connecting rod(832)Initial position and vertical guide between be in an acute angle.
The clean method of 21. chemical vapor deposition units as claimed in claim 19, it is characterised in that when the restrictor ring(6)When moving up and down, all of trace is driven(83)Move up and down;
Each described trace(83)Drive connected crankshaft structure(811)Rotate, so as to drive scraping blade(82)Rotate.
The clean method of 22. chemical vapor deposition units as claimed in claim 19, it is characterised in that when each scraping blade(82)When rotating, the scraping blade(82)With the corresponding aspirating hole(721)It is fully contacted, the aspirating hole will be deposited on(721)On sediment remove, and bring sediment into the gas extraction ring that section takes the shape of the letter U(71)It is interior, realize all aspirating holes(721)Cleaning.
CN201510704688.6A 2015-10-27 2015-10-27 A kind of chemical vapor deposition unit and its clean method Active CN106609358B (en)

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CN102899636A (en) * 2012-09-26 2013-01-30 中微半导体设备(上海)有限公司 Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ
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US20110186078A1 (en) * 2010-02-01 2011-08-04 Hermes-Epitek Corporation Semiconductor Equipment
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CN117163955B (en) * 2023-09-07 2024-04-30 煜爚(东海)新材料有限公司 Coal-based porous carbon molecular sieve and processing technology thereof

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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd.

Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai

Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc.