CN106601669A - Manufacturing method of thin-film transistor array substrate - Google Patents
Manufacturing method of thin-film transistor array substrate Download PDFInfo
- Publication number
- CN106601669A CN106601669A CN201611184209.3A CN201611184209A CN106601669A CN 106601669 A CN106601669 A CN 106601669A CN 201611184209 A CN201611184209 A CN 201611184209A CN 106601669 A CN106601669 A CN 106601669A
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- Prior art keywords
- layer
- pixel electrode
- film transistor
- thin
- metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
The invention provides a manufacturing method of a thin-film transistor array substrate. The manufacturing method comprises the following steps of successively forming a first metal layer and a second metal layer on a substrate on which a semiconductor layer is formed; forming a light blocking material layer on the second metal layer, and patterning the light blocking material for forming a light blocking layer, wherein the light blocking layer comprises a through hole which faces the semiconductor layer, a source electrode region and a drain electrode region which are arranged at two sides of the through hole, and a pixel electrode region which is adjacent with the drain electrode region; etching the second metal layer and the first metal layer, thereby transferring the pattern of the light blocking layer to the first metal layer and the second metal layer, and forming a source electrode, a drain electrode and a pixel electrode pattern; eliminating the light blocking layer at the pixel electrode region; eliminating the second metal layer of the pixel electrode region for forming a pixel electrode layer; and eliminating the residual light blocking layer. According to the manufacturing method, the source electrode region, the drain electrode region and the pixel electrode region are simultaneously formed through performing one light blocking process, thereby simultaneously forming the source electrode, the drain electrode and the pixel electrode, simplifying process steps of the thin-film transistor array substrate and reducing manufacturing cost of the thin-film transistor array substrate.
Description
Technical field
The present invention relates to Liquid crystal production technical field, more particularly to a kind of manufacture method of thin-film transistor array base-plate.
Background technology
With constantly popularizing for liquid crystal display, the display performance of liquid crystal display is proposed it is very high will
Ask.At present, in the thin-film transistor array base-plate processing procedure of liquid crystal display, need to carry out optical graving using multiple tracks light shield
Journey, however, light shield is relatively costly, cost of the light shield number of times more at most needed for thin film transistor (TFT) processing procedure is higher, and when increasing processing procedure
Between and complexity.
The content of the invention
The present invention provides a kind of manufacture method of thin film transistor (TFT), can simplify manufacturing process, reduces cost.
The present invention provides a kind of manufacture method of thin-film transistor array base-plate, the system of the thin-film transistor array base-plate
The method of making includes：
First and second metal level is sequentially formed with the substrate for be formed with semiconductor layer；
Photoresist layer is formed in the second metal layer, and patterns the photoresist layer and form photoresist layer；Institute
State photoresist layer include the through hole relative with the semiconductor layer, the source area positioned at the through hole both sides, drain region and with it is described
The adjacent pixel electrode area in drain region；
Described second and the first metal layer are etched, the pattern of the photoresist layer is transferred to into first and second metal level
On, to form source-drain electrode and pixel electrode pattern；
Remove the photoresist layer in the pixel electrode area；
The second metal layer in the pixel electrode area is removed, to form pixel electrode layer；
Remove remaining photoresist layer.
Wherein, the manufacture method also includes after the remaining photoresist layer of the removal：
Going on removing photoresistance layer array base palte to form insulating barrier, and carry out patterned process.
Wherein, the manufacture method is sequentially formed with first and second gold described on the substrate for be formed with semiconductor layer
Also include before category layer：
One substrate is provided；
Grid and public electrode are formed on the substrate；
Insulating barrier is formed with the substrate for being formed with grid and public electrode；
Semiconductor layer is formed with the insulating barrier.
Wherein, the mode for being formed by physical vapour deposition (PVD) of first and second metal level is by the first metal and
Two metals are sputtered onto respectively on the substrate for being formed with semiconductor layer.
Wherein, first metal is molybdenum titanium, and second metal is copper.
Wherein, the thickness of the first metal layer is 150-500 angstrom, and the thickness of the second metal layer is 2000-5000
Angstrom.
Wherein, the patterning photoresist layer forms photoresist layer includes：
Patterning is carried out to the photoresist layer by intermediate tone mask light shield technique and forms the photoresist layer, its middle position
The thickness of the photoresist layer on the source-drain electrode is less than in the thickness of the photoresist layer of the pixel electrode area.
Wherein, in step etching described second and the first metal layer, by the pattern of the photoresist layer be transferred to first and
In second metal layer, to form source-drain electrode and pixel electrode pattern in, using fluorine-containing hydrogen peroxide to the described second and first gold medal
Category layer is etched.
Wherein, the second metal layer in the pixel electrode area is removed in step, to form pixel electrode layer in, using not containing
The hydrogen peroxide of fluorine removes the second metal layer in the pixel electrode area.
Wherein, the pattern line width in the pixel electrode layer is less than 2um.
The manufacture method of the thin-film transistor array base-plate of the present invention is included on the substrate for be formed with semiconductor layer successively
It is formed with first and second metal level；Photoresist layer is formed in the second metal layer, and patterns the photoresist
Layer forms photoresist layer；The photoresist layer include the through hole relative with the semiconductor layer, the source area positioned at the through hole both sides,
Drain region and the pixel electrode area adjacent with the drain region；Described second and the first metal layer are etched, by the photoresist layer
Pattern be transferred on first and second metal level, to form source-drain electrode and pixel electrode pattern；Remove the pixel electrode area
Photoresist layer；The second metal layer in the pixel electrode area is removed, to form pixel electrode layer；Remove remaining photoresist layer.Cause
This, the present invention needs to carry out a light shield technique while forming source area, drain region and pixel electrode area, you can with shape simultaneously
Into source electrode, drain electrode and pixel electrode, light shield number of times is saved relative to prior art, simplify thin-film transistor array base-plate
Processing step, reduces the cost of manufacture of thin-film transistor array base-plate.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of flow chart of the manufacture method of thin-film transistor array base-plate provided in an embodiment of the present invention.
Fig. 2 to Fig. 8 is thin film transistor (TFT) in each manufacturing process of the thin-film transistor array base-plate of the embodiment of the present invention
The profile of array base palte.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 is referred to, embodiment of the present invention provides a kind of manufacture method of thin-film transistor array base-plate.The thin film
The manufacture method of transistor (TFT) array substrate comprises the steps.
See also Fig. 2, step 101, be sequentially formed with the substrate 10 for being formed with semiconductor layer 11 first metal
Layer 12 and second metal layer 13.
Wherein, can also comprise the steps before step 101.
One substrate 10 is provided.
In the present embodiment, the substrate 10 is a glass substrate.It is to be appreciated that in other embodiments, it is described
Substrate 10 is not limited in as glass substrate.
Grid 14 and public electrode 15 are formed on the substrate 10.
Insulating barrier 16 is formed with being formed with the substrate of grid 14 and public electrode 15.
Semiconductor layer 11 is formed with the insulating barrier.
Wherein, the material of the semiconductor layer be Zinc Oxide (ZnO), indium zinc oxide (InZnO), zinc-tin oxide (ZnSnO),
Gallium indium zinc oxide (GaInZnO) is made with the one kind in zirconium indium-zinc oxide (ZrInZnO).
It should be noted that in the present embodiment, first and second metal level 12 and 13 is formed by physics
The mode of vapour deposition is respectively sputtered onto the first metal and the second metal on the substrate 10 for being formed with semiconductor layer 11.Wherein,
First metal is molybdenum titanium, and second metal is copper.The thickness of the first metal layer 12 can be 150-500 angstrom.Institute
The thickness for stating second metal layer 13 can be 2000-5000 angstrom.
Fig. 3 and Fig. 4, step 102, the formation photoresist layer 17 in the second metal layer 13 are seen also, and is schemed
Photoresist layer described in case forms photoresist layer.Wherein, the photoresist layer includes the through hole relative with the semiconductor layer 11
171st, positioned at the through hole both sides source area 172, drain region 173 and the pixel electrode area adjacent with the drain region 173
174。
Specifically, in a step 102, the patterning photoresist layer 17 forms photoresist layer includes：
Light shield technique is carried out by intermediate tone mask patterning is carried out to the photoresist layer 17 to form the light
Resistance layer, wherein the thickness positioned at the photoresist layer in the pixel electrode area 174 is less than on the source area 172 and drain region 173
The thickness of photoresist layer.
See also Fig. 5, step 103, etching described second and the first metal layer 13 and 12, by the photoresist layer
Pattern is transferred on first and second metal level 12 and 13, to form source electrode 18, drain electrode 19 and pixel electrode pattern.
It should be noted that in step 103, using fluorine-containing hydrogen peroxide to described second and the first metal layer 13 and 12
It is etched.Due to having etching action to described first and second metal containing fluorine-containing hydrogen peroxide, can be by not by the light
First and second metal level 12 and 13 that resistance layer is blocked is etched away.
See also Fig. 6, step 104, the photoresist layer in the removal pixel electrode area 174.
See also Fig. 7, step 105, the second metal layer 13 in the removal pixel electrode area 174, to form pixel
Electrode 20.
It should be noted that in step 105, using not fluorine-containing hydrogen peroxide the of the pixel electrode area 172 is removed
Two metal levels 13.
It should be noted that not fluorine-containing hydrogen peroxide to the second metal etch completely, and can not have to first metal
Have an impact, so as to define pixel electrode 20.Wherein, the pattern line width in the pixel electrode 20 is less than 2um.
See also Fig. 8, step 106, the remaining photoresist layer of removal.
Further, the manufacture method of the thin-film transistor array base-plate also includes after step 106：
Going on the array base palte of removing photoresistance layer 17 to form insulating barrier, and carry out patterned process.
In the present embodiment, the manufacture method of the thin film transistor (TFT) array is included in the second metal layer 13 and is formed
Photoresist layer 17, and pattern the formation photoresist layer of the photoresist layer 17；The photoresist layer includes and the semiconductor layer
11 relative through holes 171, the source area 172 positioned at the through hole both sides, drain region 173 and adjacent with the drain region 173
Pixel electrode area 174；Etch described second and the first metal layer 13 and 12, by the pattern of the photoresist layer be transferred to first and
In second metal layer 12 and 13, to form source-drain electrode 19,20 and pixel electrode pattern；Remove the light in the pixel electrode area 174
Resistance layer；The second metal layer 13 in the pixel electrode area 174 is removed, to form pixel electrode 20.Therefore, this enforcement only need into
Light shield technique of row to form source area, drain region and pixel electrode area 174 simultaneously, you can to show source electrode 18, leakage simultaneously
Pole 19 and pixel electrode 20, relative to prior art light shield number of times is saved, the technique for simplifying thin-film transistor array base-plate
Step, reduces the cost of manufacture of thin-film transistor array base-plate.
The present invention additionally provides the manufacture method of thin film transistor (TFT) for above two embodiment, is illustrating concrete preparation side
Before method, it should be appreciated that in the present invention, the patterning refers to patterning processes, it may include photoetching process, or, including light
Carving technology and etch step, while other technique for forming predetermined pattern can also to be used for including printing, ink-jet etc.；Photoetching work
Skill, refers to film forming, exposure, development, and etc. utilization photoresist, mask plate, the exposure machine etc. of technical process the work of figure is formed
Skill.Can be according to the corresponding patterning processes of structure choice formed in the present invention.
The display device formed by the manufacture method of embodiment of the present invention thin film transistor (TFT) array, Ke Yiwei：Liquid crystal surface
Plate, LCD TV, liquid crystal display, oled panel, OLED TVs, Electronic Paper, DPF, mobile phone etc..
Above disclosed is only a kind of preferred embodiment of the invention, can not limit the power of the present invention with this certainly
Sharp scope, one of ordinary skill in the art will appreciate that all or part of flow process of above-described embodiment is realized, and according to present invention power
Profit requires made equivalent variations, still falls within the covered scope of invention.
Claims (10)
1. a kind of manufacture method of thin-film transistor array base-plate, it is characterised in that the system of the thin-film transistor array base-plate
The method of making includes：
First and second metal level is sequentially formed with the substrate for be formed with semiconductor layer；
Photoresist layer is formed in the second metal layer, and patterns the photoresist layer and form photoresist layer；The light
Resistance layer include the through hole relative with the semiconductor layer, the source area positioned at the through hole both sides, drain region and with the drain electrode
Adjacent pixel electrode area of area；
Described second and the first metal layer are etched, the pattern of the photoresist layer is transferred on first and second metal level, with
Form source-drain electrode and pixel electrode pattern；
Remove the photoresist layer in the pixel electrode area；
The second metal layer in the pixel electrode area is removed, to form pixel electrode layer；
Remove remaining photoresist layer.
2. the manufacture method of thin-film transistor array base-plate as claimed in claim 1, it is characterised in that the manufacture method exists
Described removal also includes after remaining photoresist layer：
Going on removing photoresistance layer array base palte to form insulating barrier, and carry out patterned process.
3. the manufacture method of thin-film transistor array base-plate as claimed in claim 1, it is characterised in that the manufacture method exists
Described being sequentially formed with the substrate for be formed with semiconductor layer before first and second metal level also includes：
One substrate is provided；
Grid and public electrode are formed on the substrate；
Insulating barrier is formed with the substrate for being formed with grid and public electrode；
Semiconductor layer is formed with the insulating barrier.
4. the manufacture method of thin-film transistor array base-plate as claimed in claim 1, it is characterised in that it is described first and second
First metal and the second metal are sputtered onto to be formed with respectively and are partly led by the mode for being formed by physical vapour deposition (PVD) of metal level
On the substrate of body layer.
5. the manufacture method of thin-film transistor array base-plate as claimed in claim 4, it is characterised in that first metal is
Molybdenum titanium, second metal is copper.
6. the manufacture method of the thin-film transistor array base-plate as described in claim 4 or 5, it is characterised in that first gold medal
The thickness of category layer is 150-500 angstrom, and the thickness of the second metal layer is 2000-5000 angstrom.
7. the manufacture method of thin-film transistor array base-plate as claimed in claim 1, it is characterised in that described in the patterning
Photoresist layer forms photoresist layer to be included：
Patterning is carried out to the photoresist layer by intermediate tone mask light shield technique and forms the photoresist layer, wherein positioned at institute
The thickness for stating the photoresist layer of pixel electrode area is less than the thickness of the photoresist layer on the source-drain electrode.
8. the manufacture method of thin-film transistor array base-plate as claimed in claim 1, it is characterised in that described in step etching
Second and the first metal layer, the pattern of the photoresist layer is transferred on first and second metal level, with formed source-drain electrode and
In pixel electrode pattern, described second and the first metal layer are etched using fluorine-containing hydrogen peroxide.
9. the manufacture method of thin-film transistor array base-plate as claimed in claim 1, it is characterised in that remove in step described
The second metal layer in pixel electrode area, to form pixel electrode layer in, the pixel electrode is removed using not fluorine-containing hydrogen peroxide
The second metal layer in area.
10. the manufacture method of thin-film transistor array base-plate as claimed in claim 1, it is characterised in that the pixel electrode
Pattern line width in layer is less than 2um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611184209.3A CN106601669A (en) | 2016-12-20 | 2016-12-20 | Manufacturing method of thin-film transistor array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611184209.3A CN106601669A (en) | 2016-12-20 | 2016-12-20 | Manufacturing method of thin-film transistor array substrate |
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| Publication Number | Publication Date |
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| CN106601669A true CN106601669A (en) | 2017-04-26 |
Family
ID=58599902
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611184209.3A Pending CN106601669A (en) | 2016-12-20 | 2016-12-20 | Manufacturing method of thin-film transistor array substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111477638A (en) * | 2020-04-28 | 2020-07-31 | Tcl华星光电技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN114171457A (en) * | 2021-12-07 | 2022-03-11 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111477638A (en) * | 2020-04-28 | 2020-07-31 | Tcl华星光电技术有限公司 | Array substrate, manufacturing method thereof and display device |
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| CN114171457A (en) * | 2021-12-07 | 2022-03-11 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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