CN106601614A - 一种刻蚀非晶硅太阳能电池铝膜的方法 - Google Patents

一种刻蚀非晶硅太阳能电池铝膜的方法 Download PDF

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CN106601614A
CN106601614A CN201611257617.7A CN201611257617A CN106601614A CN 106601614 A CN106601614 A CN 106601614A CN 201611257617 A CN201611257617 A CN 201611257617A CN 106601614 A CN106601614 A CN 106601614A
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silicon solar
etching
amorphous silicon
solar battery
battery aluminum
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孙铁囤
张凯胜
吴家宏
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Changzhou EGing Photovoltaic Technology Co Ltd
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Priority to EP17887450.9A priority patent/EP3564986A4/en
Priority to PCT/CN2017/076575 priority patent/WO2018120434A1/zh
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    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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Abstract

本发明属于非晶硅太阳能电池生产领域，特别涉及一种刻蚀非晶硅太阳能电池铝膜的方法：向去离子水中加入2‑氨基咪唑、尿素、水性流平剂和消泡剂，搅拌均匀；将刻蚀液通过丝网漏印到非晶硅太阳能电池板的铝膜上，丝印后的电池板室温下水平放置后，用清水对铝膜表面充分冲洗，烘干，完成刻蚀。

Description

一种刻蚀非晶硅太阳能电池铝膜的方法
技术领域
本发明属于非晶硅太阳能电池生产领域，特别涉及一种刻蚀非晶硅太阳能电池铝膜的方法。
背景技术
非晶硅太阳能电池的结构大致可以描述为：首先在玻璃板上沉积了一层导电膜(如SnO2或ITO)，再经化学气相沉积在导电膜上沉积一层非晶硅，然后在非晶硅上沉积背电极铝膜。为防止单元电池周边短路，需要对铝膜进行刻蚀形成隔离槽。
刻蚀工艺中既要确保刻蚀充分，还要避免基体不受侵蚀。现有的一些刻蚀剂容易在刻蚀铝的同时对基体板材产生腐蚀，还有些刻蚀剂在消除铝膜之后还会残留在基材上不易除去，这些都是非晶硅太阳能电池铝膜刻蚀领域所需要改进的方向。
发明内容
本发明针对上述问题，提供了一种刻蚀非晶硅太阳能电池铝膜的方法：
(1)配制刻蚀液
常温(25℃，下同)下，向去离子水中加入2-氨基咪唑、尿素、水性流平剂和消泡剂，搅拌均匀，
其中，2-氨基咪唑在去离子水中的加入量为100～400g/L，尿素在去离子水中的加入量为150～300g/L，水性流平剂在去离子水中的加入量为18～30g/L，消泡剂在去离子水中的加入量为10～15g/L；
(2)将步骤(1)配制的刻蚀液通过丝网漏印到非晶硅太阳能电池板的铝膜上，丝印后的电池板室温下水平放置后，用清水对铝膜表面充分冲洗，烘干，完成刻蚀，
其中，丝网可根据需要设计成不同的图案，
丝印后的电池板室温下水平放置的时间为60～120分钟，烘干温度为70℃。
本发明的有益效果在于：本发明发现2-氨基咪唑分子结构上的氨基结合尿素分子上的两个氨基能够在常温下协同对铝颗粒起到强烈的络合作用，相当于是2-氨基咪唑分子上的两个氨基和尿素分子上的两个氨基同时对一个细小的铝颗粒进行包围，将铝材质逐步分解并带离铝膜，最终完成刻蚀。
并且该刻蚀成分不会对电池板的其他材质造成腐蚀，水溶性良好、容易洗除，不影响电池板的后续加工。
具体实施方式
实施例1
(1)配制刻蚀液
常温(25℃，下同)下，向去离子水中加入200g/L的2-氨基咪唑、220g/L的尿素、23g/L的水性流平剂和12g/L的消泡剂，搅拌均匀；
(2)将步骤(1)配制的刻蚀液通过丝网漏印到非晶硅太阳能电池板的铝膜上，丝印后的电池板室温下水平放置100分钟后，用清水对铝膜表面充分冲洗，被冲洗后的非晶硅太阳能电池板于70℃烘干，完成刻蚀。观察刻蚀后的非晶硅太阳能电池板，刻蚀槽规则、平整。
对步骤(2)中冲洗用的清水及冲洗下来的刻蚀液进行收集，对收集到的混合液体在加热的条件下加入过量的盐酸，一方面酸可以促进尿素充分水解从而导致被包围的铝重新被释放出来，另一方面加酸过程中发现有持续的可燃性气体氢气产生，这也说明本实施例中确实将铝刻蚀了下来，根据生成氢气的量可以换算出刻蚀铝的总量；对加酸反应后的混合液进一步检测，无硅的成分，说明该刻蚀液对基体无影响。
对比例1
未向刻蚀液中加入任何2-氨基咪唑，刻蚀液其余成分及刻蚀操作、检测手段与实施例1相同：
对步骤(2)中冲洗用的清水及冲洗下来的刻蚀液进行收集，对收集到的混合液体在加热的条件下加入过量的盐酸，无可燃性气体生成，说明该刻蚀液成分未能对铝产生包围、刻蚀效果；观察刻蚀后的非晶硅太阳能电池板，也无明显被刻蚀的迹象。
对比例2
未向刻蚀液中加入任何尿素，刻蚀液其余成分及刻蚀操作、检测手段与实施例1相同：
对步骤(2)中冲洗用的清水及冲洗下来的刻蚀液进行收集，对收集到的混合液体在加热的条件下加入过量的盐酸，无气体生成，说明该刻蚀液成分未能对铝产生包围、刻蚀效果；观察刻蚀后的非晶硅太阳能电池板，也无明显被刻蚀的迹象。

Claims (7)

1.一种刻蚀非晶硅太阳能电池铝膜的方法，其特征在于：所述的方法为，
(1)配制刻蚀液
常温下，向去离子水中加入2-氨基咪唑、尿素、水性流平剂和消泡剂，搅拌均匀；
(2)将步骤(1)配制的刻蚀液通过丝网漏印到非晶硅太阳能电池板的铝膜上，丝印后的电池板室温下水平放置后，用清水对铝膜表面充分冲洗，烘干，完成刻蚀。
2.如权利要求1所述的刻蚀非晶硅太阳能电池铝膜的方法，其特征在于：步骤(1)中，2-氨基咪唑在去离子水中的加入量为100～400g/L。
3.如权利要求1所述的刻蚀非晶硅太阳能电池铝膜的方法，其特征在于：步骤(1)中，尿素在去离子水中的加入量为150～300g/L。
4.如权利要求1所述的刻蚀非晶硅太阳能电池铝膜的方法，其特征在于：步骤(1)中，水性流平剂在去离子水中的加入量为18～30g/L。
5.如权利要求1所述的刻蚀非晶硅太阳能电池铝膜的方法，其特征在于：步骤(1)中，消泡剂在去离子水中的加入量为10～15g/L。
6.如权利要求1所述的刻蚀非晶硅太阳能电池铝膜的方法，其特征在于：步骤(2)中，丝印后的电池板室温下水平放置的时间为60～120分钟。
7.如权利要求1所述的刻蚀非晶硅太阳能电池铝膜的方法，其特征在于：步骤(2)中，烘干温度为70℃。
CN201611257617.7A 2016-12-30 2016-12-30 一种刻蚀非晶硅太阳能电池铝膜的方法 Pending CN106601614A (zh)

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EP17887450.9A EP3564986A4 (en) 2016-12-30 2017-03-14 METHOD FOR ETCHING AN ALUMINUM LAYER OF A SOLAR CELL MADE OF AMORPHIC SILICON
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