CN106597035A - Nanoprobe and nanoprobe tester - Google Patents
Nanoprobe and nanoprobe tester Download PDFInfo
- Publication number
- CN106597035A CN106597035A CN201611026075.2A CN201611026075A CN106597035A CN 106597035 A CN106597035 A CN 106597035A CN 201611026075 A CN201611026075 A CN 201611026075A CN 106597035 A CN106597035 A CN 106597035A
- Authority
- CN
- China
- Prior art keywords
- nano
- probe
- semiconductor device
- tungsten
- failure analysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
The invention relates to a nanoprobe and a nanoprobe tester. The nanoprobe comprises a probe arm, wherein one end of the probe arm is used for connecting the tester, and the other end thereof is provided with contacts for simultaneously making contact with more than two same-polarity tungsten plugs of a semiconductor device to be subjected to failure analysis. In electrical characteristic test of the semiconductor device to be subjected to failure analysis, the nanoprobe can make contact with a plurality of same-polarity tungsten plugs of the semiconductor device to be subjected to failure analysis simultaneously to enable electrical characteristics corresponding to the plurality of tungsten plugs to express actual electrical characteristics of the semiconductor device to be subjected to failure analysis, so that test errors caused by factors of poor contact between some nanoprobe contacts and the tungsten plugs or no silicide under some tungsten plugs and the like can be prevented, and the actual electrical characteristics of the semiconductor device to be subjected to failure analysis can be reflected more accurately.
Description
Technical field
The present invention relates to semiconductor test technical field, more particularly to a kind of nano-probe and nano-probe tester.
Background technology
In semiconductor device failure analysis, the tungsten pinned layer generally using nano-probe tester in semiconductor device is tested
The electrology characteristic of semiconductor device, according to the failure cause of Electrical Characteristics semiconductor device.In quasiconductor during concrete operations
An each piece nano-probe of connection on the drain electrode of device, source electrode and the corresponding tungsten bolt of grid, by nano-probe drain electrode, source electrode and
Apply different voltages on grid, obtain corresponding electrology characteristic.But, existing nano-probe only one of which contact, once only
A tungsten bolt can be contacted；In order to avoid no silication under nano-probe contact in test and tungsten bolt loose contact, or indivedual tungsten bolts
Test error caused by the factors such as thing；To same polarity, it usually needs nano-probe is contacted multiple tungsten bolts respectively and is tested,
Comprehensive each corresponding electrology characteristic of tungsten bolt carries out semiconductor device failure analysis again；Its efficiency is low, cumbersome, and due to surveying
The uncertain factor brought by examination, and semiconductor device structure factor, each corresponding electrology characteristic of tungsten bolt are variant, no
The actual electrology characteristic of semiconductor device can precisely be reflected.
The content of the invention
It is an object of the present invention to provide a kind of nano-probe and nano-probe tester, solve above-mentioned present in prior art
Problem.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：
A kind of nano-probe, including needle arm, one end of the needle arm are used for connecting test instrument, and the other end is provided with for same
When with the contact for treating that failure analysis semiconductor device same polarity two or more tungsten bolt is touched.
The invention has the beneficial effects as follows：In the test of failure analysis semiconductor device electrology characteristic is treated, this nano-probe can
The multiple tungsten bolts of the same polarity of failure analysis semiconductor device are treated in contact simultaneously, are characterized with the common corresponding electrology characteristic of multiple tungsten bolts
The actual electrology characteristic of failure analysis semiconductor device is treated, indivedual nano-probe contacts can be prevented effectively from and touched not with tungsten bolt
It is good, or test error caused by the factor such as no silicide under indivedual tungsten bolt, so as to more accurately reflection treats that failure analysis is partly led
The actual electrology characteristic of body device；It is and each polarity only needs to be connected once with this nano-probe, simple to operate；And this nanometer is visited
Pin is touched with the multiple tungsten bolts of same polarity simultaneously, and contact area increase effectively reduces the contact resistance of nano-probe and each polarity,
Further accurately the actual electrology characteristic of failure analysis semiconductor device is treated in reaction.
On the basis of above-mentioned technical proposal, the present invention can also do following improvement.
Further, the contact is multiple for while the needle point for touching with multiple tungsten bolt respectively.
It is to be arranged according to the tungsten bolt for treating each polarity of failure analysis semiconductor device using the beneficial effect of above-mentioned further scheme
Cloth, designs the needle point arrangement of this nano-probe, so that the needle point of this nano-probe can be good at partly leading with failure analysis is treated
The tungsten bolt of each polarity of body device contacts, it is adaptable to treat the irregular feelings of each polarity tungsten bolt arrangement of failure analysis semiconductor device
Condition.
Further, the needle point is Rotary-table, and the least radius of the Rotary-table is 20-50nm.
It is that this size can take into account the accurate contact of needle point and tungsten bolt using the beneficial effect of above-mentioned further scheme, and
Will not be meticulous due to needle point, make nano-probe excessive with the contact resistance of each polarity, affect test result.
Further, the needle point is installed in the needle arm by slide rail.
It is that needle point can be slided on slide rail under external force using the beneficial effect of above-mentioned further scheme, according to treating
The tungsten bolt arrangement of each polarity of failure analysis semiconductor device, does appropriate location adjustment；Needle point is enable preferably to divide with waiting to fail
The tungsten bolt of each polarity of analysis semiconductor device contacts.
Further, the contact is for while the conducting block touched with multiple tungsten bolt.
It is using conductive block structure, it is easy to production and processing, and can to increase using the beneficial effect of above-mentioned further scheme
Nano-probe and the contact area of tungsten bolt, reduce the contact resistance of nano-probe and each polarity, and failure analysis is treated in accurately reaction
The actual electrology characteristic of semiconductor device, it is adaptable to treat the situation of each polarity tungsten bolt arranging rule of failure analysis semiconductor device,
As arrangement is in line.
Further, the material of the nano-probe is tungsten alloy.
It is that the fusing point of tungsten is high, and nano-probe in testing will not be because of joule using the beneficial effect of above-mentioned further scheme
Heat effect and deform, and the resistivity of tungsten is less, it is possible to decrease impact of the nano-probe self-resistance to test result.
Another technical scheme of the present invention is as follows：
A kind of nano-probe tester, the probe of the nano-probe tester adopt a kind of above-mentioned nano-probe.
Description of the drawings
Fig. 1 is existing nano-probe structure and uses schematic diagram；
Fig. 2 is a kind of nano-probe structure of the invention and uses the first schematic diagram；
Fig. 3 is a kind of nano-probe structure of the invention and uses the second schematic diagram.
In accompanying drawing, the list of parts representated by each label is as follows：
1st, existing nano-probe, 2, treat failure analysis semiconductor device, 21, tungsten bolt, 22, drain electrode, 23, source electrode, 24, grid
Pole, 3, needle arm, 31, needle point, 32, conducting block.
Specific embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
It is non-for limiting the scope of the present invention.
As shown in figure 1,1 only one of which contact of existing nano-probe, can only once contact a tungsten bolt 21；In order to avoid surveying
Test caused by the factor such as no silicide under the contact of nano-probe 1 and 21 loose contact of tungsten bolt in examination, or indivedual tungsten bolts 21
Error；To same polarity, drain electrode 22, source electrode 23 and grid 24, it usually needs nano-probe 1 is contacted multiple tungsten bolts 21 respectively and is entered
Row test, then comprehensively each 21 corresponding electrology characteristic of tungsten bolt carries out treating the failure analysis of failure analysis semiconductor device 2.
Such as Fig. 2, shown in Fig. 3, a kind of nano-probe, including needle arm 3, one end of the needle arm 3 are used for connecting test instrument, separately
One end be provided with for and meanwhile with the contact for treating that 2 same polarity two or more tungsten bolt 21 of failure analysis semiconductor device is contacted.Institute
The material for stating nano-probe is tungsten alloy.In the test of 2 electrology characteristic of failure analysis semiconductor device is treated, this nano-probe can be same
When contact treat the multiple tungsten bolts 21 of 2 same polarity of failure analysis semiconductor device, with 21 common corresponding electrology characteristic of multiple tungsten bolts
Sign treats the actual electrology characteristic of failure analysis semiconductor device 2, carries out treating the failure analysis of failure analysis semiconductor device 2.
As shown in Fig. 2 the contact is multiple for while the needle point 31 for contacting with multiple tungsten bolts 21 respectively.The needle point
31 is Rotary-table, and the least radius of the Rotary-table is 20-50nm.The needle point 31 is installed in the needle arm 3 by slide rail.
As shown in figure 3, the contact is for while the conducting block 32 contacted with multiple tungsten bolts 21.
A kind of nano-probe tester, the probe of the nano-probe tester adopt a kind of above-mentioned nano-probe.
The foregoing is only presently preferred embodiments of the present invention, not to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (7)
1. a kind of nano-probe, it is characterised in that including needle arm (3), one end of the needle arm (3) is used for connecting test instrument, separately
One end be provided with for and meanwhile with treat that what the same polarity two or more tungsten bolt (21) of failure analysis semiconductor device (2) contacted touch
Head.
2. a kind of nano-probe according to claim 1, it is characterised in that the contact for it is multiple for simultaneously respectively with it is many
The needle point (31) that individual tungsten bolt (21) contacts.
3. a kind of nano-probe according to claim 2, it is characterised in that the needle point (31) is Rotary-table, the round platform
The least radius of body is 20-50nm.
4. a kind of nano-probe according to claim 2, it is characterised in that the needle point (31) is installed on described by slide rail
In needle arm (3).
5. a kind of nano-probe according to claim 1, it is characterised in that the contact be for and meanwhile with multiple tungsten bolts
(21) conducting block (32) for contacting.
6. a kind of nano-probe according to claim 1, it is characterised in that the material of the nano-probe is tungsten alloy.
7. a kind of nano-probe tester, it is characterised in that the probe of the nano-probe tester adopts claim 1 to 6
A kind of arbitrary nano-probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611026075.2A CN106597035A (en) | 2016-11-18 | 2016-11-18 | Nanoprobe and nanoprobe tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611026075.2A CN106597035A (en) | 2016-11-18 | 2016-11-18 | Nanoprobe and nanoprobe tester |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106597035A true CN106597035A (en) | 2017-04-26 |
Family
ID=58592481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611026075.2A Pending CN106597035A (en) | 2016-11-18 | 2016-11-18 | Nanoprobe and nanoprobe tester |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106597035A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114814315A (en) * | 2022-04-18 | 2022-07-29 | 苏州伊欧陆***集成有限公司 | High current probe arm testing arrangement |
| CN114814314A (en) * | 2022-04-18 | 2022-07-29 | 苏州伊欧陆***集成有限公司 | Multi-contact high-current high-voltage test probe |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0483579A2 (en) * | 1990-10-31 | 1992-05-06 | International Business Machines Corporation | Nanometer scale probe for an atomic force microscope, and method for making the same |
| JPH08248064A (en) * | 1995-03-15 | 1996-09-27 | Toshiba Corp | Fine pattern forming apparatus and characteristics measuring apparatus |
| CN2574215Y (en) * | 2002-10-08 | 2003-09-17 | 许明慧 | Nanotube probe structure for testing IC |
| CN1808129A (en) * | 2005-01-22 | 2006-07-26 | 鸿富锦精密工业（深圳）有限公司 | Integrated circuit detector and preparation method thereof |
| CN101030548A (en) * | 2007-03-27 | 2007-09-05 | 中国科学院上海微***与信息技术研究所 | Micro-mechanical wafer chip test detecting card and its production |
| CN205450046U (en) * | 2016-01-21 | 2016-08-10 | 绍兴科盛电子有限公司 | Many probe test subassembly |
-
2016
- 2016-11-18 CN CN201611026075.2A patent/CN106597035A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0483579A2 (en) * | 1990-10-31 | 1992-05-06 | International Business Machines Corporation | Nanometer scale probe for an atomic force microscope, and method for making the same |
| JPH08248064A (en) * | 1995-03-15 | 1996-09-27 | Toshiba Corp | Fine pattern forming apparatus and characteristics measuring apparatus |
| CN2574215Y (en) * | 2002-10-08 | 2003-09-17 | 许明慧 | Nanotube probe structure for testing IC |
| CN1808129A (en) * | 2005-01-22 | 2006-07-26 | 鸿富锦精密工业（深圳）有限公司 | Integrated circuit detector and preparation method thereof |
| CN101030548A (en) * | 2007-03-27 | 2007-09-05 | 中国科学院上海微***与信息技术研究所 | Micro-mechanical wafer chip test detecting card and its production |
| CN205450046U (en) * | 2016-01-21 | 2016-08-10 | 绍兴科盛电子有限公司 | Many probe test subassembly |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114814315A (en) * | 2022-04-18 | 2022-07-29 | 苏州伊欧陆***集成有限公司 | High current probe arm testing arrangement |
| CN114814314A (en) * | 2022-04-18 | 2022-07-29 | 苏州伊欧陆***集成有限公司 | Multi-contact high-current high-voltage test probe |
| CN114814315B (en) * | 2022-04-18 | 2023-09-22 | 苏州伊欧陆***集成有限公司 | High-current probe arm testing device |
| CN114814314B (en) * | 2022-04-18 | 2024-02-13 | 苏州伊欧陆***集成有限公司 | Multi-contact high-current high-voltage test probe |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170426 |
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| RJ01 | Rejection of invention patent application after publication |