CN106587041A - Film preparation device and preparation method based on ink-jet printing - Google Patents
Film preparation device and preparation method based on ink-jet printing Download PDFInfo
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- CN106587041A CN106587041A CN201611056334.6A CN201611056334A CN106587041A CN 106587041 A CN106587041 A CN 106587041A CN 201611056334 A CN201611056334 A CN 201611056334A CN 106587041 A CN106587041 A CN 106587041A
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- film
- reagent
- jet array
- inkjet technology
- shower nozzle
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/003—Phosphorus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
Abstract
The invention provides a film preparation device and preparation method based on ink-jet printing. A top plate and a bottom plate which are correspondingly arranged are adopted, nozzle arrays which face the bottom plate and are controlled by a control device are installed on the lower end face of the top plate and jet reagents to a substrate arranged on the upper end face of the bottom plate, and then film is prepared. The film preparation device is simple in structure, the film preparation method is simple in technological process and convenient to operate, and then the film preparation efficiency and quality can be effectively improved.
Description
Technical field
The present invention relates to technical field of film preparation, more particularly, to a kind of film system based on inkjet technology
Standby device and preparation method.
Background technology
Graphene is a kind of New Two Dimensional inorganic nano material developed in recent years, due to the high machinery of its tool by force
Degree, outstanding conductive and heat conductivility, and abundant source, are respectively provided with every field such as chemistry, physics, material, electronics
Wide application prospect.But, there are problems in the industrial applications of Graphene, wherein, prepare with scale Graphene is
One of main challenge.
Graphene oxide is the oxide of Graphene, is that to prepare Graphene normal because very similar in structure with Graphene
Presoma.Meanwhile, graphene oxide is also a kind of new carbon of excellent performance, with higher specific surface area and rich
Rich functional group, such as hydroxyl, epoxy radicals, carboxyl and carbonyl.Additionally, the stretch modulus and ultimate strength and list of graphene oxide
The stretch modulus of wall carbon nano tube is similar with ultimate strength, and its light weight, and thermal conductivity is good and cheap and easy to get, be prepare it is poly-
The high-quality raw material of compound nano composite material.
Additionally, two-dimensional film material is due to its excellent properties in terms of light, electricity, magnetic so as to front with wide application
Scape.Preparing traditional method of graphene oxide or two-dimensional film material mainly has spin-coating method and spraying process.
By taking the method for preparing graphene oxide film as an example.Spin-coating method is the sol evenning machine using at a high speed rotation, by dispensing,
Three steps of film forming that rotate at a high speed and volatilize prepare film.By the dropping liquid amount for controlling time of spin coating, rotating speed, graphene solution
And solution concentration is controlling the thickness of film.But in the method, affect the factor of film quality more, such as solution concentration, turn
Speed, type of solvent, spin coating number of times, ambient temperature and humidity can all affect the quality of film, and due to the viscosity of graphene oxide
Very low, film tack prepared by the method is poor, and the uniformity and thickness of film is uncontrollable so that the method is dfficult to apply to
The preparation of large-area graphene oxide film.
Spraying process is, by nebulizer graphene oxide solution, to be then sprayed onto the graphene oxide solution of atomization
Substrate surface, forms graphene oxide film.But in the method, solution concentration, the degree of scatter of solution, the uniformity of spraying are equal
The quality of film is had a significant impact, the uniformity and thickness of film are difficult to precise control.
The content of the invention
The present invention is provided and a kind of overcomes the problems referred to above or can preparing on a large scale of solving the above problems at least in part
The film preparation device based on inkjet technology of film and preparation method.
Random mode inkjet technology is that a small amount of ink is changed into into ink droplet, and ink droplet is sprayed on paper, forms character
Or pattern.In random mode inkjet technology, controlled by print signal, ink only just sprays when printing needs.In order to carry
High print speed, random mode ink-jet printer arranges transducer, precise control mostly using the structure of many shower nozzles on shower nozzle
The injection of shower nozzle ink inside.
According to an aspect of the present invention, based on random mode inkjet technology, there is provided one kind is based on inkjet technology
Film preparation device, including being provided with the top board of jet array and be capable of the base plate of anchoring base, the jet array connection
Control device, the side of the shower nozzle of the jet array is provided with the transducer controlled by control device, and the shower nozzle towards
The substrate placed on base plate.
The apparatus structure is simple, also, in film preparation, according to the default shape of control device, by jet array
Shower nozzle simultaneously basad upper injection reagent, fully ensure that the homogeneity of prepared film.Additionally, the setting of jet array, has
Film is prepared beneficial to quick, large area.Meanwhile, the shapes and sizes of the substrate being placed on can be adjusted, and further be protected
Card prepares on a large scale the realization of film.
According to another aspect of the present invention, there is provided a kind of method for manufacturing thin film based on inkjet technology, Neng Gouying
For preparing graphene oxide film and two-dimensional film material, wherein to be mainly graphene film, black phosphorus thin for two-dimensional film material
Film, WS2Film, TiSe2Film, Bi2Se3Film.It is comprised the following steps：
S1, configuration prepare the reagent of film, and the reagent is fitted in the liquid storage box；
S2, by substrate fixed placement on moveable platform；
S3, according to default film growth form, control device control jet array and moveable platform are moved to properly
Position；
Reagent in S4, liquid storage box is entered in jet array, and control device controls the shower nozzle of jet array, and reagent is sprayed
It is incident upon in substrate, prepares film.
The preparation method technical process is simple, and under normal temperature, condition of normal pressure, directly prepare has more preferably attachment with substrate
The thin-film material of property, it is to avoid to the impact of property of thin film under hot conditions.
A kind of film preparation device and preparation method based on inkjet technology that the application is proposed, its advantage master
It is as follows：
(1) jet array for preparing film is correspondingly arranged on top board and base plate and the removable flat of substrate is placed
Platform, simple structure；
(2) by moveable platform on control device control base plate, to adjust the location and shape of the film grown in substrate,
Control mode is easy；
(3) jet array arranged on top board, is easy to quick, large area to prepare film；
(4) jet size of shower nozzle is little, simultaneously because the effect of transducer, reagent jet velocity is fast, is easy to accurately control
The thickness of film, increases the adhesive force of film and substrate；
(5) technical process of method for manufacturing thin film is simple, it is easy to control；
(6) jet array is adopted, basad large area can sprays solution simultaneously, effectively raise the homogeneous of film
Property；
(7) film for preparing heats in certain temperature range, is easy to remove the solvent remained in film, only forms
Thin-film material.
Description of the drawings
Fig. 1 is a kind of structural representation of the film preparation device based on inkjet technology according to the embodiment of the present invention
Figure；
Fig. 2 is that a kind of flow process of the method for manufacturing thin film based on inkjet technology according to the embodiment of the present invention is illustrated
Figure.
Specific embodiment
With reference to the accompanying drawings and examples, the specific embodiment of the present invention is described in further detail.Hereinafter implement
Example is not limited to the scope of the present invention for illustrating the present invention.
A kind of film preparation device and preparation method based on inkjet technology, can be applied to prepare graphene oxide
Film and two-dimensional film material, wherein two-dimensional film material are mainly graphene film, black phosphorus film, WS2Film, TiSe2It is thin
Film, Bi2Se3Film.Below only by taking the implementation process for preparing graphene oxide film as an example.
It is shown in Figure 1, a kind of film preparation device based on inkjet technology, including top board 2 and base plate 3, top board 2
It is oppositely arranged with the correspondence of base plate 3.Jet array 4, the face of shower nozzle 41 of jet array 4 are installed with the lower surface of top board 2
To base plate 3.
Jet array 4 includes multiple shower nozzles 41.When film is prepared, substrate is positioned on base plate 3, graphene oxide is molten
Liquid Jing shower nozzles 41 are ejected in the substrate being positioned on base plate 3, so as to form graphene oxide film.
Jet array 4 is connected to control device 1, the injection of reagent in the control jet array 4 of control device 1.According to control
The information of the output of device 1, corresponding shower nozzle 41 outwards sprays reagent in jet array 4, in order to the substrate placed on base plate 3
Correspondence position injection graphene oxide solution, prepare graphene oxide film.
Control device 1 is the computer system with programming device.Current conventional computer system is used equally to this
In device, with the injection of reagent in the upper nozzle array 4 of controlroof 2, control mode is simple, strong applicability.
According to the size for preparing graphene oxide film, the jet array 4 installed on top board 2 is adjusted by control device 1
The quantity and scope of the shower nozzle 41 of middle injection reagent, to realize the regulation and control to preparing the scale of graphene oxide film.
Because graphene oxide solution is directly injected in the substrate being arranged on base plate 3 by jet array 4, therefore,
Can be according to the scale of film preparation, appropriate regulation is arranged at the size and jet array 4 of the substrate on base plate 3, adjusts
Section mode is easy.
Additionally, jet array 4 is installed on top board 2, the simple structure of top board 2 changes convenient.According to the rule of film preparation
Mould, the jet array 4 that can be changed top board 2 and be installed on top board 2, to adapt to the demand of film preparation, enhances film system
Standby applicability.
The side of top board 2 is provided with liquid storage box 5, and the graphene oxide solution for preparing is contained in liquid storage box 5.Liquid storage box 5
Woven hose is set between jet array 4, and graphene oxide solution Jing of the splendid attire woven hose enters jet array in liquid storage box 5
In 4 shower nozzle 41.
Shower nozzle 41 includes miniature agent reservoirs and nozzle, and nozzle is arranged at one end of the miniature agent reservoirs.Liquid storage
The graphene oxide solution contained in box 5 Jing after the shower nozzle 41 that woven hose enters jet array 4, temporarily store up by graphene oxide solution
In there are miniature agent reservoirs.When graphene oxide film is prepared, the reagent Jing sprays being stored in miniature agent reservoirs
Mouth is ejected in substrate.
The side of miniature agent reservoirs is provided with transducer.The piezoelectric element of transducer is arranged at miniature agent reservoirs
Side, when film preparation is carried out, the signal of transducer receiving control device 1, the piezoelectric element of transducer is deformed upon, squeeze
Miniature agent reservoirs are pressed, makes the reagent stored in miniature agent reservoirs that micro drop is formed at nozzle, work as piezoelectric element
Original position is replied, drop passes through the basad injection of nozzle, so as to form graphene oxide film in substrate.
The internal diameter of nozzle is 20 μm -30 μm.Nozzle coordinates the amount of the reagent sprayed in transducer control shower nozzle 41.
The nozzle very little of shower nozzle 41, makes the amount of the graphene oxide solution of each squeezed delivery nozzle very little, is easy to accurately
The thickness of the film for preparing.Simultaneously as the effect of the transducer of the side setting of miniature agent reservoirs, makes oxygen
The based speed of graphite alkene solution Jing nozzles injection is very big, effectively enhances the attachment of graphene oxide film and substrate
Power.
In a specific embodiment, liquid storage box 5 is arranged at the top of top board 2.
In another specific embodiment, liquid storage box 5 is arranged at the side of top board 2.
Reagent pump is set on woven hose of the connection liquid storage box 5 with jet array 4.Reagent pump is used in liquid storage box 5
Graphene oxide solution is pumped in the miniature agent reservoirs of the shower nozzle 41 of jet array 4.
According to the property of the reagent contained in liquid storage box 5, and the set location of liquid storage box 5, in liquid storage box 5 and jet array
Reagent pump is installed on the woven hose of 4 connections, the reagent being easy in liquid storage box 5 is smoothly entered in jet array 4.
Moveable platform 6 is provided with the upper surface of base plate 3, moveable platform 6 is connected to the output end of control device 1,
The control moveable platform 6 of control device 1 shift position.According to the position in the shape or substrate that prepare graphene oxide film,
The control moveable platform 6 of control device 1 is moved to corresponding position, prepares graphene oxide with the corresponding position in substrate thin
Film.
Moveable platform 6 is slidably installed on base plate 3.Slide rail is installed on base plate 3, moveable platform 6 passes through
Slide rail is installed on base plate 3.
Shown in Figure 2, a kind of method for manufacturing thin film based on inkjet technology is comprised the following steps：
S1, configuration graphene oxide solution, and the graphene oxide solution is fitted in the liquid storage box 5；
S2, by substrate fixed placement on moveable platform 6；
S3, according to default film preparation shape or thickness, the control jet array 4 of control device 1 and moveable platform 6 are moved
Move to suitable position；
Graphene oxide solution in S4, liquid storage box 5 is entered in jet array 4, the control jet array 4 of control device 1
Shower nozzle, graphene oxide solution is sprayed to substrate, prepare graphene oxide film.
In above-mentioned steps S1, during a certain amount of solid oxidation Graphene is directly dissolved in into water or ethanol solution, form mixed
Solution is closed, mixed solution component is simple.The experimental ware for containing mixed solution is put in supersonic wave cleaning machine, and ultrasonic vibration is mixed
Close uniform, be configured with certain density uniform graphene oxide solution, configuration mode is simple.
The concentration of graphene oxide solution is moderately adjusted according to film preparation situation.Wherein, than convenient concentration range
For 0.2mg/mL -2mg/mL.
Concentration is too little, the graphene oxide content in solution very little, when solution Jing nozzles are ejected in substrate, it is more difficult to formed
Certain thickness film, simultaneously as containing more water or ethanol, can also affect in substrate the tack of film and/or thin
The compactness of film.
Concentration is too big, and graphene oxide solution can be unstable, if standing time is slightly long, easily produces precipitation；Additionally, oxidation
Graphene solution concentration is too big, and the woven hose for being easily caused nozzle and/or connection liquid storage box 5 and jet array 4 produces obstruction, shadow
Ring the normal operation of device.
In above-mentioned steps S2, first the substrate for preparing film is cleaned up, then be positioned on moveable platform 6.Substrate
Specifically cleaning method is：Substrate is put into into experimental ware A, and certain acetone soln is added in the vessel, make substrate whole
In being immersed into acetone soln；Above-mentioned vessel A is put in supersonic wave cleaning machine, is cleaned by ultrasonic 4-8min；Substrate is put into separately
In one experimental ware B, and a certain amount of ethanol is added in the vessel, substrate is all immersed in ethanol solution；By vessel B
It is put into and puts in supersonic wave cleaning machine, is cleaned by ultrasonic 1-2min；Take out the substrate after being cleaned by ultrasonic, deionized water cleaning
Afterwards, dry up in nitrogen atmosphere.The method can effectively clean the stain of substrate surface, to avoid affecting graphene oxide thin
The property and graphene oxide film of film and effective attachment of substrate.
Substrate is silicon wafer, electro-conductive glass thin slice, sheet metal, ceramic bases, resin base, polymer-based end or flexibility
Substrate.
The concrete manner of execution of above-mentioned steps S3 is：Growth form, the thickness information of film are arranged by control device 1,
Control device 1 is according to information control moveable platform 6 shift position, so that the injection of jet array 4 graphene oxide solution is extremely
The correspondence position being placed in the substrate of the upper end of moveable platform 6.
In above-mentioned steps S4, in the presence of the transducer of miniature agent reservoirs side is arranged at, spray is temporarily stored within
Graphene oxide solution Jing nozzle extrusion in the shower nozzle 41 of head array 4, and spray to the correspondence position of substrate.
The thickness of the film for preparing is adjusted by step S5, the particular content of step S5 is：In control jet array 4
Shower nozzle 41 sprays the number of times of reagent, adjusts the thickness of the film for preparing.Because the size of nozzle is very little, transducer is often moved
Make once, the amount of the graphene oxide solution ejected from nozzle is very little, be easy to be accurately controlled in formed in substrate thin
The thickness of film, in order to prepare nano level film.Meanwhile, by the number of times of control injection reagent, difference can be prepared
The film of thickness.
Additionally, in the presence of transducer, the graphene oxide solution in shower nozzle 41 is sprayed at a high speed, in directive substrate
Relevant position, makes graphene oxide film greatly enhance with the adhesive force of substrate.
In a specific embodiment, the graphene oxide film for preparing is entered using the processing method of step S6
Row is processed so that the water or the ethanol evaporation that remain in film and obtain purer graphene oxide film, processing mode is easy.
Specific processing method is in step S6：The graphene oxide film prepared in step S4 is carried out at heating
Reason.The substrate for being attached with graphene oxide film is put into into N2Heat in atmosphere, be conducive to removing under the high temperature conditions thin
The water remained in film or ethanol；Meanwhile, in N2In atmosphere process, can avoid graphene oxide film under the high temperature conditions with sky
Component in gas reacts and affects the property of film.
Select suitable heating-up temperature that process is dried to film, can effectively remove in film remain it is volatile
Material, accelerates the speed of film drying.In step S6, the temperature range heated to graphene oxide film is 40
℃-50℃。
The temperature heated to graphene oxide is too low, does not reach the effect of heat treatment；The temperature of heating
It is too high, can make graphene oxide film that the phenomenon of cracking occurs, affect film quality.
A kind of film preparation device based on inkjet technology of the present invention, the concrete action when film is prepared is：
The graphene oxide solution of liquid storage box 5 is automatically flowed into or is pumped in the shower nozzle 41 of jet array 4, the control base plate 3 of control device 1
On the adjustment position of moveable platform 6, make jet array 4 corresponding with the position of the substrate being arranged on moveable platform 6, so as to
The transducer of the side of shower nozzle 41 is arranged in the control of control device 1, makes shower nozzle 41 at a high speed spray graphene oxide solution
Correspondence position to substrate, forms tool definite shape, the graphene oxide film of thickness.
The setting of jet array 4, is easy to the quick preparation of large area film, meanwhile, improve the homogeneity of film.Nozzle
Size combines the set-up mode of transducer, and the jet velocity of the graphene oxide of raising effectively raises the speed of film preparation
Degree and efficiency.The apparatus structure is simple, easy to operate, it is easy to control.
A kind of method for manufacturing thin film based on inkjet technology of the present invention, the graphene oxide solution storage for preparing
In liquid storage box 5；After the correspondence position that control device 1 adjusts jet array 4 and substrate, the graphite oxide in liquid storage box 5
Alkene solution is pumped in the shower nozzle 41 of jet array 4；Control device 1 controls transducer, by the graphite oxide in shower nozzle 41
Alkene solution sprays the correspondence position to substrate at a high speed；
The method is simple without the need for preparing film, Preparation equipment under high temperature, condition of high voltage, and technical process is simple, operation side
Just.
Finally, the present processes are only preferably embodiment, are not intended to limit protection scope of the present invention.It is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements made etc. should be included in the protection of the present invention
Within the scope of.
Claims (10)
1. a kind of film preparation device based on inkjet technology, it is characterised in that：It includes top board (2) and corresponding to top board
(2) base plate (3) for arranging, the lower surface of the top board (2) is provided with towards the base plate (3), by control device (1) control
The jet array (4) of shift position.
2. a kind of film preparation device based on inkjet technology as claimed in claim 1, it is characterised in that：The top board (2)
Side the liquid storage box (5) for containing reagent is installed, the reagent is by the connection liquid storage box (5) and jet array (4)
Woven hose enters the shower nozzle (41) of jet array (4).
3. a kind of film preparation device based on inkjet technology as claimed in claim 2, it is characterised in that：The shower nozzle (41)
Including miniature agent reservoirs and the nozzle for being arranged at described miniature agent reservoirs one end.
4. a kind of film preparation device based on inkjet technology as claimed in claim 3, it is characterised in that：The shower nozzle (41)
The side of miniature agent reservoirs be provided with the transducer that the control shower nozzle (41) sprays reagent.
5. a kind of film preparation device based on inkjet technology as claimed in claim 3, it is characterised in that：The chi of the nozzle
Very little is 20 μm -30 μm.
6. a kind of film preparation device based on inkjet technology as claimed in claim 2, it is characterised in that：On the woven hose
Reagent in the liquid storage box (5) is pumped to the reagent pump of jet array (4) for setting.
7. a kind of film preparation device based on inkjet technology as claimed in claim 1, it is characterised in that：The base plate (3)
Upper surface controlled by the control device (1) and moveable platforms (6) towards the jet array (4) are set.
8. a kind of method for manufacturing thin film based on inkjet technology, it is characterised in that comprise the following steps：
S1, configuration prepare the reagent of film, and the reagent is fitted in the liquid storage box (5)；
S2, by substrate fixed placement on moveable platform (6)；
S3, according to default film growth form, control device (1) control jet array (4) and moveable platform (6) are moved to
Suitable position；
Reagent in S4, liquid storage box (5) is entered in jet array (4), the shower nozzle of control device (1) control jet array (4)
(41), reagent is sprayed to substrate, film is prepared.
9. a kind of method for manufacturing thin film based on inkjet technology as claimed in claim 8, it is characterised in that also including step
S5：The number of times of the injection reagent of shower nozzle (41), adjusts the thickness of the film for preparing in control jet array (4).
10. a kind of method for manufacturing thin film based on inkjet technology as claimed in claim 8, it is characterised in that also including step
S6：The film prepared in step S4 is heated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611056334.6A CN106587041A (en) | 2016-11-24 | 2016-11-24 | Film preparation device and preparation method based on ink-jet printing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611056334.6A CN106587041A (en) | 2016-11-24 | 2016-11-24 | Film preparation device and preparation method based on ink-jet printing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106587041A true CN106587041A (en) | 2017-04-26 |
Family
ID=58591995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611056334.6A Pending CN106587041A (en) | 2016-11-24 | 2016-11-24 | Film preparation device and preparation method based on ink-jet printing |
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| Country | Link |
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| CN (1) | CN106587041A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611024A (en) * | 2017-07-17 | 2018-01-19 | 华南理工大学 | A kind of high-performance source-drain electrode printed form thin film transistor (TFT) and preparation method thereof |
| CN111139517A (en) * | 2020-01-03 | 2020-05-12 | 浙江工业大学 | Preparation method and device of array type liquid drop crystal |
| CN108906524B (en) * | 2018-07-14 | 2022-01-18 | 福州大学 | Method for encapsulating quantum dot light guide plate based on electrostatic atomization film forming |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102152653A (en) * | 2010-12-03 | 2011-08-17 | 江苏锐毕利实业有限公司 | Character spray printing machine for printed circuit board |
| CN102862402A (en) * | 2012-10-17 | 2013-01-09 | 东莞凯佳智芯电子科技有限公司 | Jet printing control method and system of array type precise jet printing device |
-
2016
- 2016-11-24 CN CN201611056334.6A patent/CN106587041A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102152653A (en) * | 2010-12-03 | 2011-08-17 | 江苏锐毕利实业有限公司 | Character spray printing machine for printed circuit board |
| CN102862402A (en) * | 2012-10-17 | 2013-01-09 | 东莞凯佳智芯电子科技有限公司 | Jet printing control method and system of array type precise jet printing device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611024A (en) * | 2017-07-17 | 2018-01-19 | 华南理工大学 | A kind of high-performance source-drain electrode printed form thin film transistor (TFT) and preparation method thereof |
| CN108906524B (en) * | 2018-07-14 | 2022-01-18 | 福州大学 | Method for encapsulating quantum dot light guide plate based on electrostatic atomization film forming |
| CN111139517A (en) * | 2020-01-03 | 2020-05-12 | 浙江工业大学 | Preparation method and device of array type liquid drop crystal |
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