CN106564932A - 一种pete器件用阴极材料 - Google Patents
一种pete器件用阴极材料 Download PDFInfo
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- CN106564932A CN106564932A CN201610932926.3A CN201610932926A CN106564932A CN 106564932 A CN106564932 A CN 106564932A CN 201610932926 A CN201610932926 A CN 201610932926A CN 106564932 A CN106564932 A CN 106564932A
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- 239000010406 cathode material Substances 0.000 title claims abstract description 34
- 239000005020 polyethylene terephthalate Substances 0.000 title claims abstract description 29
- 229920000139 polyethylene terephthalate Polymers 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000002105 nanoparticle Substances 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000006104 solid solution Substances 0.000 claims abstract description 4
- 229910020751 SixGe1-x Inorganic materials 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052799 carbon Inorganic materials 0.000 claims abstract 2
- 239000003795 chemical substances by application Substances 0.000 claims abstract 2
- 238000005245 sintering Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000013339 cereals Nutrition 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract 1
- 239000011148 porous material Substances 0.000 description 4
- 238000003723 Smelting Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
- C01G17/006—Compounds containing, besides germanium, two or more other elements, with the exception of oxygen or hydrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
Abstract
本发明涉及一种PETE器件用阴极材料。本发明属于光电热电发电技术领域。一种PETE器件用阴极材料，为硅与锗形成二元固溶体化合物，半导体化合物分子式为SixGe1‑x，x＝5‑30％；化合物有元素硼(B)掺杂，掺杂比例为0.02‑0.08mol％；纳米结构生成有两种方式：一种是在合金粉末中添加氮化硼(BN)或是碳60(C60)纳米颗粒，添加重量比例为0.2‑0.5wt％；另一种方式是在合金粉未中添加铝纳米颗粒作为造孔剂，添加比例为1‑5vol％，然后将烧结后的材料切成2‑5mm厚的薄片，放在80℃‑120℃的质量浓度为40％‑80％的硝酸中腐蚀。本发明能有效增加材料的散射中心，显著提高阴极材料的电子发射率，有利于阴极对太阳光的吸收，效果明显，适用范围广等。
Description
技术领域
本发明属于光电热电发电技术领域，特别是涉及一种PETE器件用阴极材料。
背景技术
PETE器件又叫光子增强型热离子发射器件，能够同时利用光和热来发电，具有双重发电优势，同时较太阳电池耐受温度更高(超过200℃)，成本很低(所需要的半导体材料数量极少)。该器件结构与热离子发射器件相似，均为真空平板结构，具有阴阳两电极，不同的是其阴极为P型半导体。该种器件的发电原理为：阴极吸收光子，电子经热激发从价带跃迁到导带；电子扩散至阴极表面，克服势垒发射至真空；阳极收集电荷形成电流。
根据PETE器件的工作原理，其阴极材料在整个能量转换过程中担负着非常重要的作用，对阴极材料的要求为可以吸收较多的热量，同时具有更多的散射中心，以增强电子发射能力。
目前，公开的技术文献资料报道，现今PETE器件研究选用的阴极材料多为均质P型半导体材料，存在电子发射率较低和对太阳光吸收能力较弱等技术问题。
发明内容
本发明为解决公知技术中存在的技术问题而提供一种PETE器件用阴极材料。
本发明的目的是提供一种能有效增加材料的散射中心，显著提高阴极材料的电子发射率，有利于阴极对太阳光的吸收，效果明显，适用范围广等特点的PETE器件用阴极材料。
本发明PETE器件用阴极材料所采取的技术方案是：
一种PETE器件用阴极材料，其特点是：PETE器件用阴极材料为硅与锗形成二元固溶体化合物，半导体化合物分子式为SixGe1-x，x＝5-30％；化合物有元素硼(B)掺杂，掺杂比例为0.02-0.08mol％；纳米结构生成有两种方式：一种是在合金粉末中添加氮化硼(BN)或是碳60(C60)纳米颗粒，添加重量比例为0.2-0.5wt％；另一种方式是在合金粉未中添加铝纳米颗粒作为造孔剂，添加比例为1-5vol％，然后将烧结后的材料切成2-5mm厚的薄片，放在80℃-120℃的质量浓度为40％-80％的硝酸中腐蚀。
本发明PETE器件用阴极材料还可采取以下方案：
所述的PETE器件用阴极材料，其特点是：添加造孔剂的PETE器件用阴极材料，硝酸中腐蚀时间为2-5min。
所述的PETE器件用阴极材料，其特点是：阴极材料合金采用中频熔炼的方法合成，合金采用放电等离子体烧结成型。
本发明具有的优点和积极效果是：
PETE器件用阴极材料由于采用了本发明全新的技术方案，与现有技术相比，本发明纳米结构的引入，可有效增加材料的散射中心，显著提高阴极材料的电子发射率；而纳米结构自身的较高的结晶度和较低的缺陷密度，也有利于阴极对太阳光的吸收，具有效果明显，适用范围广等优点。
附图说明
图1是实施例2制备的PETE器件用阴极材料样品SEM照片。
具体实施方式
为能进一步了解本发明的发明内容、特点及功效，兹例举以下实施例，并配合附图详细说明如下：
参阅附图1。
实施例1
一种PETE器件用阴极材料，制备Si90Ge10+0.05mol％B样品。PETE器件用阴极材料选取带隙宽度较大的硅Si与锗Ge形成二元固溶体化合物材料，在该化合物进行元素硼(B)掺杂，形成半导体化合物的分子式为Si90Ge10+0.05mol％B。纳米结构生成方式：在合金粉末中添加氮化硼(BN)或是碳60(C60)纳米颗粒；烧结后的材料切成2mm-5mm厚的薄片，放在80℃-120℃的浓度为40％-80％的硝酸中腐蚀2min-5min。材料合金采用中频熔炼的方法合成，合金采用放电等离子体烧结(SPS)快速烧结成型。
PETE器件用阴极材料，常温下，电子逸出功为4.32ev，较常规掺杂B的Si材料的逸出功(约4.4ev)降低；具有纳米结构的样品的逸出功较没有纳米结构样品的逸出功有明显的降低。
实施例2
一种PETE器件用阴极材料，制备Si90Ge10+0.05mol％B和加入2vol％Al造孔剂的材料样品。PETE器件用阴极材料选取带隙宽度较大的硅Si与锗Ge形成二元固溶体化合物材料，在该化合物进行元素硼(B)掺杂，形成半导体化合物的分子式为Si90Ge10+0.05mol％B。纳米结构生成方式：在合金粉膜中添加铝Al纳米颗粒作为造孔剂，添加比例为2vol％，然后将烧结后的材料切成2mm-5mm厚的薄片，放在80℃-120℃的浓度为40％-80％的硝酸中腐蚀2min-5min；材料合金采用中频熔炼的方法合成，合金采用放电等离子体烧结(SPS)快速烧结成型。
PETE器件用阴极材料，常温下，电子逸出功为4.08ev，较常规掺杂B的Si材料的逸出功(约4.4ev)有明显降低；具有纳米结构的样品的逸出功较没有纳米结构样品的逸出功有很大程度的降低。
本实施例能有效增加材料的散射中心，显著提高阴极材料的电子发射率，有利于阴极对太阳光的吸收，具有效果明显，适用范围广等特点。
Claims (3)
1.一种PETE器件用阴极材料，其特征是：PETE器件用阴极材料为硅与锗形成二元固溶体化合物，半导体化合物分子式为SixGe1-x，x＝5-30％；化合物有元素硼掺杂，掺杂比例为0.02-0.08mol％；纳米结构生成有两种方式：一种是在合金粉末中添加氮化硼或是碳60纳米颗粒，添加重量比例为0.2-0.5wt％；另一种方式是在合金粉未中添加铝纳米颗粒作为造孔剂，添加比例为1-5vol％，然后将烧结后的材料切成2-5mm厚的薄片，放在80℃-120℃的质量浓度为40％-80％的硝酸中腐蚀。
2.根据权利要求1所述的PETE器件用阴极材料，其特征是：硝酸中腐蚀时间为2-5min。
3.根据权利要求1或2所述的PETE器件用阴极材料，其特征是：阴极材料合金采用中频熔炼的方法合成，合金采用放电等离子体烧结成型。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633327A (zh) * | 2012-08-14 | 2014-03-12 | 三星Sdi株式会社 | 复合负极活性材料、包括该材料的锂电池及其制备方法 |
| CN103996826A (zh) * | 2013-02-15 | 2014-08-20 | 三星Sdi株式会社 | 负极活性物质及各自包含该负极活性物质的负极和锂电池 |
| CN104011918A (zh) * | 2011-10-26 | 2014-08-27 | 耐克森有限公司 | 用于二次电池的电极组合物 |
| CN104067417A (zh) * | 2012-12-12 | 2014-09-24 | 株式会社Lg化学 | 二次电池用电极、包含其的二次电池和线缆型二次电池 |
| CN105720259A (zh) * | 2014-12-23 | 2016-06-29 | 三星Sdi株式会社 | 负极活性物质和包含负极活性物质的锂电池 |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104011918A (zh) * | 2011-10-26 | 2014-08-27 | 耐克森有限公司 | 用于二次电池的电极组合物 |
| CN103633327A (zh) * | 2012-08-14 | 2014-03-12 | 三星Sdi株式会社 | 复合负极活性材料、包括该材料的锂电池及其制备方法 |
| CN104067417A (zh) * | 2012-12-12 | 2014-09-24 | 株式会社Lg化学 | 二次电池用电极、包含其的二次电池和线缆型二次电池 |
| CN103996826A (zh) * | 2013-02-15 | 2014-08-20 | 三星Sdi株式会社 | 负极活性物质及各自包含该负极活性物质的负极和锂电池 |
| CN105720259A (zh) * | 2014-12-23 | 2016-06-29 | 三星Sdi株式会社 | 负极活性物质和包含负极活性物质的锂电池 |
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Application publication date: 20170419 |