CN106564932A - Cathode material for PETE device - Google Patents
Cathode material for PETE device Download PDFInfo
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- CN106564932A CN106564932A CN201610932926.3A CN201610932926A CN106564932A CN 106564932 A CN106564932 A CN 106564932A CN 201610932926 A CN201610932926 A CN 201610932926A CN 106564932 A CN106564932 A CN 106564932A
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- China
- Prior art keywords
- pete
- cathode material
- compound
- cathode
- alloy powder
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- 239000010406 cathode material Substances 0.000 title claims abstract description 34
- 239000005020 polyethylene terephthalate Substances 0.000 title claims abstract description 29
- 229920000139 polyethylene terephthalate Polymers 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 229910052796 boron Inorganic materials 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000002105 nanoparticle Substances 0.000 claims abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000006104 solid solution Substances 0.000 claims abstract description 4
- 229910020751 SixGe1-x Inorganic materials 0.000 claims abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052799 carbon Inorganic materials 0.000 claims abstract 2
- 239000003795 chemical substances by application Substances 0.000 claims abstract 2
- 238000005245 sintering Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000013339 cereals Nutrition 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract 1
- 239000011148 porous material Substances 0.000 description 4
- 238000003723 Smelting Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
- C01G17/006—Compounds containing, besides germanium, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
Abstract
The invention relates to a cathode material for a PETE device. The invention belongs to the technical field of photoelectric thermoelectric power generation. The cathode material for PETE device is a binary solid solution compound formed from silicon and germanium, and the molecular formula of the semiconductor compound is SixGe1‑xX is 5-30%; the compound is doped with boron (B), and the doping proportion is 0.02-0.08 mol%; there are two ways in which nanostructures can be generated: one is adding Boron Nitride (BN) or carbon 60 (C) into the alloy powder60) Nano particles, the adding weight proportion is 0.2-0.5 wt%; the other method is that aluminum nano particles are added into alloy powder as pore-forming agent, the adding proportion is 1-5 vol%, then the sintered material is cut into slices with the thickness of 2-5mm, and the slices are corroded in nitric acid with the mass concentration of 40% -80% at the temperature of 80 ℃ -120 ℃. The invention can effectively increase the scattering center of the material, obviously improve the electron emissivity of the cathode material, is beneficial to the absorption of the cathode to sunlight, and has obvious effect, wide application range and the like.
Description
Technical field
The invention belongs to photoelectricity thermoelectricity technical field of power generation, more particularly to a kind of PETE devices cathode material.
Background technology
PETE devices are called photon enhanced thermionic emission device, can be generated electricity using light and heat simultaneously, with double
Electrical dominance is retransmitted, while (more than 200 DEG C) higher compared with solar cell tolerable temperature, very low (the required semi-conducting material of cost
Quantity is few).The device architecture is similar to thermionic emission device, is evacuated flat panel structure, with two electrode of negative and positive, different
Be its negative electrode be P-type semiconductor.The electricity generating principle of this kind of device is：Negative electrode absorbs photon, and electronics Jing thermal excitations jump from valence band
Adjourn conduction band；Electrons spread overcomes potential barrier to launch to vacuum to cathode surface；Anode is collected electric charge and forms electric current.
According to the operation principle of PETE devices, its cathode material is responsible for very important in whole conversion process of energy
Effect, the requirement to cathode material is to absorb more heat, while having more scattering centers, is sent out with strengthening electronics
Penetrate ability.
At present, disclosed technical literature document announcement, the cathode material that PETE devices research now is selected mostly are homogenizing p-type
, there is the technical problems such as electron emissivity is relatively low and weaker to sun light absorpting ability in semi-conducting material.
The content of the invention
The present invention provides a kind of PETE devices cathode material to solve technical problem present in known technology.
It is an object of the invention to provide a kind of scattering center that can be effectively increased material, significantly improves the electronics of cathode material
Emissivity, is conducive to absorption of the negative electrode to sunlight, and effect is obvious, PETE devices negative electrode material the features such as applied widely
Material.
PETE devices cathode material of the present invention is adopted the technical scheme that：
A kind of PETE devices cathode material, is characterized in：PETE device cathode materials are that silicon forms binary admittedly with germanium
Solution compounds, semiconducting compound molecular formula are SixGe1-x, x=5-30%；Compound has element boron (B) to adulterate, doping ratio
Example is 0.02-0.08mol%；Nanostructured is generated two ways：One kind be in alloy powder add boron nitride (BN) or
It is 60 (C of carbon60) nano-particle, addition part by weight is 0.2-0.5wt%；Another way is to add aluminum to receive in alloy powder
Used as pore creating material, adding proportion is 1-5vol% to rice grain, the material after sintering is cut into the thick thin slices of 2-5mm then, is placed on
80 DEG C -120 DEG C of mass concentration is corrosion in the nitric acid of 40%-80%.
PETE devices cathode material of the present invention can also take below scheme：
Described PETE device cathode materials, are characterized in：The PETE device cathode materials of addition pore creating material, nitric acid
Middle etching time is 2-5min.
Described PETE device cathode materials, are characterized in：Cathode material alloy is synthesized using the method for intermediate frequency (IF) smelting,
Alloy adopts discharge plasma sinter molding.
The present invention has the advantages and positive effects that：
PETE devices cathode material as a result of the brand-new technical scheme of the present invention, compared with prior art, this
The introducing of bright nanostructured, can be effectively increased the scattering center of material, significantly improve the electron emissivity of cathode material；And nanometer
The higher degree of crystallinity and relatively low defect concentration of structure itself, is also beneficial to absorption of the negative electrode to sunlight, bright with effect
It is aobvious, the advantages of applied widely.
Description of the drawings
Fig. 1 is PETE device cathode material sample SEM photographs prepared by embodiment 2.
Specific embodiment
For the content of the invention, feature and effect of the present invention can be further appreciated that, following examples are hereby enumerated, and coordinates accompanying drawing
Describe in detail as follows：
Refering to accompanying drawing 1.
Embodiment 1
A kind of PETE devices cathode material, prepares Si90Ge10+ 0.05mol%B samples.PETE device cathode materials
Choose band gap width larger silicon Si and germanium Ge and form binary solid solution compound-material, element boron (B) is carried out in the compound
Doping, the molecular formula for forming semiconducting compound are Si90Ge10+ 0.05mol%B.Nanostructured generating mode：In alloy powder
Middle addition boron nitride (BN) or 60 (C of carbon60) nano-particle；Material after sintering is cut into the thick thin slices of 2mm-5mm, is placed on 80
DEG C -120 DEG C of concentration is to corrode 2min-5min in the nitric acid of 40%-80%.Material alloys are closed using the method for intermediate frequency (IF) smelting
Into alloy sinters (SPS) Fast Sintering molding using discharge plasma.
PETE device cathode materials, under room temperature, electron work functon is 4.32ev, the ease of the Si materials of more conventional doping B
Go out work((about 4.4ev) reduction；The work function of the work function of the sample with nanostructured less nanostructured sample has substantially
Reduction.
Embodiment 2
A kind of PETE devices cathode material, prepares Si90Ge10The material of+0.05mol%B and addition 2vol%Al pore creating materials
Material sample.PETE devices cathode material is chosen band gap width larger silicon Si and germanium Ge and forms binary solid solution compound material
Material, carries out element boron (B) doping in the compound, and the molecular formula for forming semiconducting compound is Si90Ge10+ 0.05mol%B.
Nanostructured generating mode：Add aluminum Al nano-particle in alloyed powder film as pore creating material, adding proportion is 2vol%, then
Material after sintering is cut into into the thick thin slices of 2mm-5mm, 80 DEG C -120 DEG C of concentration is placed on to corrode in the nitric acid of 40%-80%
2min-5min；Material alloys are synthesized using the method for intermediate frequency (IF) smelting, and alloy is quickly burnt using discharge plasma sintering (SPS)
Form type.
PETE device cathode materials, under room temperature, electron work functon is 4.08ev, the ease of the Si materials of more conventional doping B
Going out work((about 4.4ev) has substantially reduction；The work function of the work function of the sample with nanostructured less nanostructured sample
Having significantly reduces.
The present embodiment can be effectively increased the scattering center of material, significantly improve the electron emissivity of cathode material, be conducive to
Absorption of the negative electrode to sunlight, with effect substantially, the features such as applied widely.
Claims (3)
1. a kind of PETE devices cathode material, is characterized in that：PETE device cathode materials are that silicon forms binary solid solution with germanium
Body compound, semiconducting compound molecular formula are SixGe1-x, x=5-30%；Compound has element boron to adulterate, and doping ratio is
0.02-0.08mol%；Nanostructured is generated two ways：One kind is that addition boron nitride or carbon 60 are received in alloy powder
Rice grain, addition part by weight are 0.2-0.5wt%；Another way is to add aluminum nanoparticles in alloy powder as making
Hole agent, adding proportion are 1-5vol%, and the material after sintering is cut into the thick thin slices of 2-5mm then, 80 DEG C -120 DEG C are placed on
Mass concentration is corrosion in the nitric acid of 40%-80%.
2. PETE devices cathode material according to claim 1, is characterized in that：In nitric acid, etching time is 2-5min.
3. PETE devices cathode material according to claim 1 and 2, is characterized in that：Cathode material alloy adopts intermediate frequency
The method synthesis of melting, alloy adopt discharge plasma sinter molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610932926.3A CN106564932A (en) | 2016-10-25 | 2016-10-25 | Cathode material for PETE device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610932926.3A CN106564932A (en) | 2016-10-25 | 2016-10-25 | Cathode material for PETE device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106564932A true CN106564932A (en) | 2017-04-19 |
Family
ID=60414396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610932926.3A Pending CN106564932A (en) | 2016-10-25 | 2016-10-25 | Cathode material for PETE device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106564932A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633327A (en) * | 2012-08-14 | 2014-03-12 | 三星Sdi株式会社 | Composite anode active material, anode and lithium battery comprising the material, and method of preparing the same |
| CN103996826A (en) * | 2013-02-15 | 2014-08-20 | 三星Sdi株式会社 | Negative active material, and negative electrode and lithium battery each including the negative active material |
| CN104011918A (en) * | 2011-10-26 | 2014-08-27 | 耐克森有限公司 | Electrode composition for secondary battery cell |
| CN104067417A (en) * | 2012-12-12 | 2014-09-24 | 株式会社Lg化学 | Electrode for secondary battery, secondary battery comprising same, and cable-type secondary battery |
| CN105720259A (en) * | 2014-12-23 | 2016-06-29 | 三星Sdi株式会社 | Negative active material and lithium battery including negative active material |
-
2016
- 2016-10-25 CN CN201610932926.3A patent/CN106564932A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104011918A (en) * | 2011-10-26 | 2014-08-27 | 耐克森有限公司 | Electrode composition for secondary battery cell |
| CN103633327A (en) * | 2012-08-14 | 2014-03-12 | 三星Sdi株式会社 | Composite anode active material, anode and lithium battery comprising the material, and method of preparing the same |
| CN104067417A (en) * | 2012-12-12 | 2014-09-24 | 株式会社Lg化学 | Electrode for secondary battery, secondary battery comprising same, and cable-type secondary battery |
| CN103996826A (en) * | 2013-02-15 | 2014-08-20 | 三星Sdi株式会社 | Negative active material, and negative electrode and lithium battery each including the negative active material |
| CN105720259A (en) * | 2014-12-23 | 2016-06-29 | 三星Sdi株式会社 | Negative active material and lithium battery including negative active material |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170419 |