CN106549091A - Reflection layer, the ceramic printed-circuit board encapsulated for LED and method are set inside - Google Patents
Reflection layer, the ceramic printed-circuit board encapsulated for LED and method are set inside Download PDFInfo
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- CN106549091A CN106549091A CN201610612041.5A CN201610612041A CN106549091A CN 106549091 A CN106549091 A CN 106549091A CN 201610612041 A CN201610612041 A CN 201610612041A CN 106549091 A CN106549091 A CN 106549091A
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- substrate
- face
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- layer
- ceramic
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- 239000000919 ceramic Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title description 22
- 239000010410 layer Substances 0.000 claims abstract description 152
- 239000010949 copper Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000011241 protective layer Substances 0.000 claims abstract description 47
- 229910052802 copper Inorganic materials 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 230000003647 oxidation Effects 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- 238000003466 welding Methods 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 48
- 230000007704 transition Effects 0.000 claims description 37
- 238000005538 encapsulation Methods 0.000 claims description 32
- 239000011651 chromium Substances 0.000 claims description 26
- 238000007747 plating Methods 0.000 claims description 26
- 239000010931 gold Substances 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 150000002739 metals Chemical class 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052681 coesite Inorganic materials 0.000 claims description 11
- 229910052906 cristobalite Inorganic materials 0.000 claims description 11
- 239000010948 rhodium Substances 0.000 claims description 11
- 229910052682 stishovite Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052905 tridymite Inorganic materials 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 229910017315 Mo—Cu Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910004353 Ti-Cu Inorganic materials 0.000 claims description 4
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- 235000006708 antioxidants Nutrition 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 9
- 230000008859 change Effects 0.000 abstract description 6
- 238000002161 passivation Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 9
- 239000000741 silica gel Substances 0.000 description 9
- 229910002027 silica gel Inorganic materials 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 241000196324 Embryophyta Species 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 oxonium ion Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000010980 sapphire Chemical class 0.000 description 2
- 229910052594 sapphire Chemical class 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910020218 Pb—Zn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical class [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001570 bauxite Inorganic materials 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 239000011814 protection agent Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011009 synthetic ruby Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
Abstract
Reflection layer, the ceramic printed-circuit board encapsulated for LED and preparation method thereof are set in a kind of, including for being electrically insulated and/or for the ceramic base bottom of heat conduction/radiating, the mutually parallel on the whole relative both side surface of ceramic base bottom be referred to as substrate A face and substrate B face；This side of substrate A face be provided with the electronic circuit for fixing or welding LED chip and/or for heat conduction, radiating cover copper；This side of substrate B face is provided with reflection layer, that LED illuminator sends and through the light of ceramic base bottom for reflecting；The another side of reflection layer is directly exposed or arranges matcoveredn.Reflection layer exposed surface itself occurs passivation reaction makes that reflection layer is protected or overlying protective layer does not prevent oxidation with air directly contact, can maintain good reflection characteristic for a long time；Protective layer can avoid light decay caused by the physicochemical change of reflecting layer, and can improve the composite heat-conducting coefficient and structural strength of base plate for packaging by increasing protective layer metal thickness.
Description
Technical field
The present invention relates to semiconductor packages and application, more particularly to the single or multiple lift ceramic printing used by encapsulation LED
Circuit board and its manufacture method, the more particularly to interior ceramic printed-circuit board and its manufacture method for setting reflection layer.
Background technology
Printed circuit board (PCB) of the prior art with ceramics as carrier, the physical and chemical stability of its base ceramic material have
The advantages of high-fire resistance, high insulation resistance and low thermal coefficient of expansion etc., industry is made to attract attention.The appearance of ceramic substrate overcomes resin
Tellite is difficult to the shortcoming for overcoming, and is widely used for making ceramic printed-circuit board in LED applications.
There is good heat conduction and heat sinking function necessary not only for substrate in the application of LED, in addition it is also necessary to the optics having had
After characteristic causes to weld or secure LED chip, its overall optical characteristics performance is excellent.
In the LED encapsulation ceramic printed-circuit boards of prior art as shown in Figure 7, the oxidation of some ceramic materials such as three two
Aluminium or sapphire class material, the characteristic with printing opacity, the light that LED sends can be transmitted to non-light direction from ceramic substrate, have few
Part also can be absorbed by substrate, so as to increase light loss, in order to overcome such problem, also had in ceramic electrical in prior art
The one side of road plate weld or fixed LED is provided with reflecting layer, and the light being emitted onto on ceramic circuit board is reflected from light direction
Go to reduce overall light loss.
One side in prior art in ceramic circuit plate weld or fixed LED is provided with reflecting layer, and these reflecting layer are usual
For the coat of metal；These coats of metal on the one hand due to illumination or with air directly contact or the silica gel of package metals reflected coat layer
Oxygen can also be passed through, therefore these coats of metal are very easy to oxidation and sulfuration and cause reflection efficiency step-down and affect whole LED
The light output characteristic of packaging.
The metallic reflector arranged in the one side of ceramic circuit plate weld or fixed LED in prior art not only needs and pottery
The substrate and circuit of porcelain circuit board directly has the electrical characteristic that is also required for of good mechanical attachment characteristic, if desired for and pottery
Circuit part insulation in porcelain circuit board；But the ceramic circuit board with metallic reflection coating is also needed to through welding LED core
The processes such as piece so that metallic reflector is very easy to short-circuit with the circuit part in ceramic circuit board or does not reach safety standard
Require, need the technological measure that special insulating barrier or correlation are set to prevent its short circuit and improve insulation characterisitic；It is real in technique
Existing extremely difficult, difficulty is high, and efficiency is low.
Explanation of nouns：
Silicon nitride：Its English is Silicon nitride；Si3N4 Ceramics are a kind of covalent key compounds, basic structural unit
For [SiN4] tetrahedron, silicon atom be located at tetrahedral center, have four nitrogen-atoms around which, respectively positioned at tetrahedral
Four summits, then in the form of sharing an atom per three tetrahedrons, form continuous and firm net in three dimensions
Lattice structure.Many performances of silicon nitride are all attributed to this structure.Si3N4Thermal coefficient of expansion is low, thermal conductivity is high, therefore its heat shock resistance
Property is splendid.
Aluminium nitride：Its English is Aluminum nitride, is abbreviated as AIN；Covalently key compound, belongs to hexagonal crystal system,
The crystal structure of Pb-Zn deposits type, white or canescence.Aluminium nitride is atomic crystal, belongs to DLC nitride, and highest can be steady
Determine to 2200 DEG C.Room temperature strength is high, and intensity is good compared with slow, thermal conductivity with the rising decline of temperature, and thermal coefficient of expansion is little, is good
Heat shock resistance material.The ability of resist melt metal attack is strong, aluminium nitride or electrical insulator, and dielectric properties are good, are ceramics
One of preferred material of circuit board support plate.
Alundum (Al2O3)：Namely aluminum oxide, chemical symbol：, pure aluminum oxide is white amorphous powder, custom
Claim alumina, density 3.9-4.0g/cm3, 2050 DEG C of fusing point, 2980 DEG C of boiling point be water insoluble, is amphoteric oxide, can be dissolved in nothing
In machine acid and alkaline solution, mainly there are two kinds of variants of α types and γ types, industrially can extract from bauxite.In alpha-type aluminum oxide
Lattice in, oxonium ion is that six sides are tightly packed, and aluminium ion is symmetrically dispersed in the octahedral coordination center that oxonium ion is surrounded, brilliant
Lattice can be very big, therefore fusing point, boiling point are very high.Alpha-type aluminum oxide is water insoluble and sour, industrially also referred to as alumina, is the base of metallic aluminium processed
This raw material；It is also used for making various refractory brick, fire-clay crucible, refractory tube, high temperature resistant laboratory apparatus；Can also make grinding agent, fire retardant,
Inserts etc.；High-purity alpha-type aluminum oxide still produces Alundum, synthetic ruby and sapphire raw material；It is additionally operable to production
The plate base of modern large scale integrated circuit.
LED is the abbreviation of English Light Emitting Diode, and Chinese implication is light emitting diode.
COB is the abbreviation of English Chip On Board, and Chinese implication is chip on board；Chip on board encapsulation is bare chip
One of mounting technology, on a printed circuit, chip is electrically connected with lead suture side with substrate for semiconductor chip handing-over attachment
Method is realized, and is covered to guarantee reliability with resin.
COB light source：LED plane light source or integrated optical source are encapsulated also known as COB light source by COB；COB light source is mainly transported at present
In indoor and outdoor lamp lighting, the shot-light, Down lamp, Ceiling light, lamp affixed to the ceiling, fluorescent lamp and light bar such as interior, the street lamp of outdoor,
Bulkhead lamp, the wall lamp of floodlight and current urban landscape, luminescent characters etc..
OSP is the abbreviation for English Organic Solderability Preservatives, and Chinese implication is organic guarantor
Weldering film, also known as copper-protection agent, English is also referred to as Preflux.OSP refers to printed circuit board (PCB) (PCB) Copper Foil in the present patent application
A kind of technique for meeting RoHS command requests of surface treatment.Briefly, OSP is exactly on clean naked copper surface, to change
Method grows one layer of organic coating.This tunic has anti-oxidation, heat shock resistance, moisture-proof, to protect copper surface in normal
Do not continue to get rusty in state environment, aoxidize or vulcanize;But in follow-up welding high temperature, this kind of diaphragm must be easy to again
Removed by scaling powder rapidly, the clean copper surface exposed can so be able within the extremely short time with melting scolding tin immediately
It is combined into firm solder joint.
The content of the invention
The technical problem to be solved in the present invention is the ceramic base for avoiding prior art LED encapsulation ceramic printed-circuit board
Plate printing opacity, on LED chip solder side plus plating reflecting layer complex process and easily oxidation cause deficiency that reflection efficiency reduces it
Place and propose a kind of LED encapsulation ceramic printed-circuit boards that reflecting layer is provided with non-LED chip solder side.
The present invention is reflection layer to be set in one kind, is encapsulated for LED to solve the technical scheme that the technical problem is adopted
Ceramic printed-circuit board (100), including for being electrically insulated and/or for the ceramic base bottom of heat conduction/radiating, by the ceramic base
Bottom mutually relative both side surface parallel on the whole is referred to as substrate A face and substrate B face；Arrange on the substrate A face
There is the region for fixing or welding LED chip and the electronic circuit that electrically connects with chip and/or cover for heat conduction, radiating
Copper；It is provided with reflection layer on the substrate B face, reflection layer is for each LED on substrate A face is projected simultaneously toward non-light direction
Through the light of ceramic base bottom leakage, reflect back toward light direction, so as to improve total luminous efficiency.
The reflection layer is covered by metal material cloth and is constituted, in being aluminium Al, gold Au, silver Ag, rhodium Rh and copper Cu these metals
Any one or two kinds and two or more combinations constitute.
The one side of the reflection layer is closely overlying on the substrate B face of the ceramic base bottom, the reflection layer it is another
Matcoveredn is then set on face.
The thickness of the protective layer is more than or equal to 100 nanometers.
The material of the protective layer is copper Cu or nickel or silica SiO2。
When the protective layer is copper Cu, the palpus plating oxidation barrier film in its one side with external contact, this is anti-oxidant thin
The material of film is nickel and/or gold Au.
When the protective layer is copper Cu, OPS is in one side of the protective layer with external contact, that is, covers the organic guarantor of last layer
Weldering film.
The thickness of the reflection layer is 50 nanometers to 0.300 millimeter.
The thickness of the reflection layer is 100 nanometers to 500 nanometers.
The thickness of the ceramic base bottom is 0.100 millimeter to 1.000 millimeters.
The thickness of the ceramic base bottom is 0.100 millimeter to 0.635 millimeter.
Transition zone 150 is additionally provided between the reflection layer and the protective layer.
The material of the transition zone includes any one in titanium Ti, tungsten W, chromium Cr He Molybdenum Mo these metals or two kinds and two
Plant the combination of the above.
The material of the transition zone includes that titanium Ti, tungsten W, chromium Cr and molybdenum Mo these metals constitute Ti- with metallic copper Cu respectively
Any one or two kinds and two kinds in Cu CTB alloys, W-Cu tungsten-copper alloys and/or Cr-Cu chrome copper, Mo-Cu alloys with
On combination.
The material of the transition zone also includes nonmetallic silica SiO2。
The thickness of the transition zone is 10 nanometers to 600 nanometers.
The present invention can also be a kind of Nei Let reflection layers, be used for solve the technical scheme that the technical problem is adopted
The preparation method of the ceramic printed-circuit board of LED encapsulation is comprised the following steps：A1：One piece of slice-shaped, for electric insulation and/or
For the ceramic base bottom of heat conduction/radiating, its mutually relative both side surface parallel on the whole is referred to as into substrate A face
With substrate B face；The electricity for the region for fixing or welding LED chip being provided with the substrate A face and being electrically connected with chip
Sub-line road and/or for heat conduction, radiating cover copper；And on the substrate B face then vacuum plating a layer thickness at 60 nanometers extremely
200 nanometers of reflection layer, for each LED on substrate A face is projected and let out through the ceramic base bottom toward non-light direction
The light of leakage, reflects back toward light direction, so as to improve total luminous efficiency；The material of the reflection layer be aluminium Al, gold Au,
Any one in copper Cu, rhodium Rh and/or silver Ag these metals or two kinds and two or more combinations.
The preparation method of the ceramic printed-circuit board, also including step：A3：The one side of the reflection layer is closely overlying on
On the substrate B face of the ceramic base bottom, on the another side of the reflection layer then vacuum plating a layer thickness at 400 nanometers extremely
600 nanometers of protective layer；The material of the protective layer is copper Cu or nickel or silica SiO2。
The preparation method of the ceramic printed-circuit board, protects described in plating after stating step A1 on the implementation, in A3 steps
Before sheath, also including step A2：The reflection layer is closely overlying on the substrate B face of the ceramic base bottom, in the light
On the another side in reflecting layer, first vacuum plating a layer thickness is in 400 nanometers to 600 nanometers of transition zone；The material of the transition zone
Matter includes any one in Titanium Ti, tungsten w, chromium Cr and molybdenum Mo these metals or two or more combinations；Or the mistake
The material for crossing layer includes the Ti-Cu CTB alloys of Titanium Ti, tungsten W, chromium Cr and molybdenum Mo respectively with Ni metal composition, W-Cu tungsten coppers
Any one in alloy or Cr-Cu chrome copper, molybdenum copper Mo-Cu alloys or two or more combinations；And the transition zone
Material also include nonmetallic silica SiO2；Just implement above-mentioned steps A3 after step A2 so that the transition zone
It is arranged between the reflection layer and protective layer.
The solution have the advantages that：1. as the one side of the reflection layer is directly coupled with substrate B face, will not be with air
Directly contact, it is therefore prevented that the oxidation of reflecting surface or other physicochemical changes, oxidation, can allow reflecting surface to remain good for a long time
Reflection characteristic；If the another side of the reflection layer not other layers of plating, can be also passivated, in Surface Creation property very in atmosphere
Stable alundum (Al2O3) layer, good protective effect of tool itself.2. protective layer can avoid the physicochemical change in reflecting layer
The light decay for bringing；On the other hand, when protective layer is high-thermal conductive metal, reach certain thickness and can also greatly improve base plate for packaging
Composite heat-conducting coefficient and structural strength；On the one hand 3. transition zone increases the adhesion between protective layer and reflecting layer, and in addition one
Aspect also improves the composite heat-conducting coefficient and structural strength of base plate for packaging to a certain extent.
Description of the drawings
Fig. 1 is that the light path of the present invention " the interior ceramic printed-circuit board for setting reflection layer, encapsulating for LED " each preferred embodiment is shown
It is intended to；In figure, the direction of arrow is the direction of light；
Fig. 2 is the axonometric projection decomposing state schematic diagram of one of the preferred embodiment；
Fig. 3 is the orthographic projection diagrammatic side-view cross-sectional schematic diagram of one of the preferred embodiment；
Fig. 4 is the close-up schematic view of part A in Fig. 3；
Fig. 5 is the orthographic projection diagrammatic side-view cross-sectional schematic diagram of the two of the preferred embodiment of the present invention；
Fig. 6 is the close-up schematic view of part B in Fig. 5；
Fig. 7 is the light path schematic diagram of prior art LED encapsulation ceramic printed-circuit board, and in figure, the direction of arrow is the direction of light；
The silica gel of printing opacity is coated with that face for fixing LED chip in figs. 1 and 7 in the top of ceramic bases, i.e., is used in FIG
In electronic circuit that is fixed or welding LED chip and/or for heat conduction, the LED core in the substrate A face 112 for covering copper of radiating
The part of printing opacity is additionally provided with piece, the part of these printing opacities includes the translucent silica gel being covered in LED chip, if doing white light
LED product, then be also possible to be mixed with fluorescent material in silica gel；If doing the LED product of purple light, quartz glass or can be saturating can be used
The lens for crossing purple wave band cover LED chip and cover without silica gel；
Substrate A face 112 in figure 3 be used for fix or weld LED chip electronic circuit and/or for heat conduction, radiating cover
Copper, the substrate A face 112 are also referred to as LED chip stationary plane；The one side of protective layer 160 is coupled with transition zone 150 in figure 3, is protected
The another side of sheath 160 is used for the fixed installation of LED encapsulation 100 entirety of ceramic printed-circuit board, also referred to as installs and fixes
Face.
Specific embodiment
Present disclosure is described in further detail with reference to each accompanying drawing.
Being provided with the one embodiment of LED encapsulation ceramic printed-circuit board 100 in reflecting layer as shown in Figures 1 to 4,
The LED encapsulation ceramic printed-circuit board 100 includes for being electrically insulated and/or for the ceramic base bottom 110 of heat conduction/radiating,
110 mutually parallel on the whole relative both side surface of the ceramic base bottom is referred to as into substrate A face 112 and substrate B
Face 114；112 this side of the substrate A face be provided with for fix or weld LED chip electronic circuit and/or for heat conduction,
What is radiated covers copper；114 this side of the substrate B face is provided with reflection layer 130, and the reflection layer 130 lights for reflecting LED
It is that body sends and through the light of ceramic base bottom.Substrate of the one side of the reflection layer 130 with the ceramic base bottom 110
B faces 114 couple, and protective layer 160 is additionally provided with the another side of the reflection layer 130.The reflection layer 130 and the guarantor
Transition zone 150 is additionally provided between sheath 160.
Method for manufacturing this kind of ceramic printed-circuit board is comprised the following steps, C1：In the substrate of ceramic base bottom 110
114 side vacuum plating a layer thickness of B faces is in 60 nanometers to 100 nanometers of reflection layer 130；The reflection layer 130 is arranged
On the substrate B face 114 of ceramic base bottom 110；Reflecting layer of the reflection layer 130 for metal material, the metal material
For any one in aluminium, gold, silver, copper and rhodium this five kinds of metals or two or more combinations；C2：The reflection layer 130
Simultaneously couple with the substrate B face 114 of the ceramic base bottom 110；The vacuum plating one on the another side of the reflection layer 130
Thickness degree is in 400 nanometers to 600 nanometers of transition zone 150；The material of the transition zone 150 include metal material titanium Ti, tungsten w,
Any one in these four metals or two or more combinations in chromium Cr, molybdenum Mo；Or the material of the transition zone 150 includes gold
Ti-Cu CTB alloys, W-Cu tungsten-copper alloys or the Cr-Cu chromium-coppers that category titanium Ti, tungsten w, chromium Cr, molybdenum Mo are constituted with Ni metal respectively is closed
In gold or molybdenum copper Mo-Cu alloys any one or two or more combinations；Or the material of the transition zone 150 also includes non-gold
Category material silica SiO2；C2：Connection of the one side of the transition zone 150 with the reflection layer 130；In the institute
State the protective layer 160 that vacuum plating a layer thickness on the another side of transition zone 150 is at 400 nanometers to 600 nanometers；The protective layer
160 material is metallic copper.
Silica gel is also covered with the substrate A face 112 for being used to fixing or welding LED chip as shown in Figure 3.Use in figure 3
In electronic circuit that is fixed or welding LED chip and/or for heat conduction, the LED core in the substrate A face 112 for covering copper of radiating
The part of printing opacity is additionally provided with piece, the part of these printing opacities includes the translucent silica gel being covered in LED chip, if doing white light
LED product, then be also possible to be mixed with fluorescent material in silica gel；If doing the LED product of purple light, quartz glass or can be saturating can be used
The lens for crossing purple wave band cover LED chip and cover without silica gel.
As shown in FIG. 5 and 6 in embodiment, reflection layer 130 is only provided with, and is not provided with protective layer 160 and transition zone
150.The method for there was only the ceramic printed-circuit board of reflection layer 130 for manufacture is comprised the following steps, A1：In ceramic base
114 side vacuum one layer of reflection layer 130 of plating of substrate B face of bottom 110；The reflection layer 130 is arranged on ceramic bases
On the substrate B face 114 of layer 110；Reflecting layer of the reflection layer 130 for metal material, the metal material are aluminium.The light
The one side in reflecting layer 130 couples with the substrate B face 114 of the ceramic base bottom 110, on the another side of the reflection layer 130
Aluminium is contacted with extraneous air and is passivated into alundum (Al2O3) so as to form one layer of passivation protection layer.Passivation technology can certainly be passed through
Process is passivated in aluminium or other metal surfaces and forms passivation protection film layer.When reflecting layer needs and extraneous air directly contact
When, it will usually from the reflecting layer of aluminium material.Certainly the material and material thickness selection in reflecting layer can be according to actual need
Want and integrated cost carries out selection setting.
In the embodiment for also having some not shown in figures, can reflection layer 130 and protective layer 160 be only set, be used
Comprise the following steps in the method for manufacturing this kind of ceramic printed-circuit board, B1：In 114 side of substrate B face of ceramic base bottom 110
Vacuum plating a layer thickness is in 60 nanometers to 100 nanometers of reflection layer 130；The reflection layer 130 is arranged on ceramic bases
On the substrate B face 114 of layer 110；The reflection layer 130 for metal material reflecting layer, the metal material be aluminium, gold, silver,
Any one in copper and rhodium this five kinds of metals or two or more combinations；B2：The one side of the reflection layer 130 is with the pottery
The substrate B face 114 of porcelain basalis 110 couples；On the another side of the reflection layer 130, vacuum plating a layer thickness is 400
The protective layer 160 of nanometer to 600 nanometers；The material of the protective layer 160 is metallic copper.
In above-mentioned each method, before reflection layer 130 on plating, the substrate A face 112 of the ceramics base PCB plate 100
On can set for fixing or welding the electronic circuit layer 120 of LED chip；Electricity can certainly be not provided with
Sub- line layer 120.Plating reflecting layer can arrange electronic circuit layer 120 before can also after, it is also possible to meanwhile, that is,
Say, plating while can arranging electronic circuit layer 120 on the substrate A face 112 of the ceramics base PCB plate 100 is covered with reflecting layer.
Reflecting layer of the reflection layer 130 for metal material, the metal material are this five kinds of aluminium, gold, silver, copper and rhodium
Any one in metal or two or more combinations.The thickness of the reflection layer 130 is 10 nanometers to 1000 nanometers.It is described
The thickness of reflection layer 130 is 20 nanometers to 500 nanometers.The thickness of the reflection layer 130 is 60 nanometers to 100 nanometers.
The thickness of the reflection layer 130 can be 50 nanometers to 300 microns, and the thickness of the reflection layer 130 may be used also
Be 60 nanometers to 200 nanometers, or even can also be 10 nanometers, 20 nanometers, 100 nanometers, 500 nanometers, 1000 nanometers, 2 microns,
20 microns, 100 microns, 300 microns or 500 microns.
The thickness of the ceramic base bottom 110 is 1.00 millimeters to 0.10 millimeter.The further ceramic base bottom 110
Thickness can also be that as 0.100 millimeter to 0.635 millimeter conventional thickness includes 1.00 millimeters, 0.500 millimeter of 0.635 milli
Rice, 0.380 millimeter, 0.254 millimeter, 0.100 millimeter.Can be different thick according to the selection of the demand of actual radiating, insulation and printing opacity
The ceramic substrate material layer of degree.
The material of the protective layer 160 is metallic copper.The thickness of the protective layer 160 is more than or equal to 100 nanometers, being to receive
Such as 200 nanometers, 300 nanometers or 400 nanometers of the thickness of meter level；The protective layer 160 can also be that micron-sized thickness such as 200 is micro-
Rice, 300 microns or 400 microns.
The material of the transition zone 150 includes any in these four metals in metal material titanium Ti, tungsten w, chromium Cr, molybdenum Mo
One or more combination.Or the material of the transition zone 150 include Titanium Ti, tungsten w, chromium Cr, molybdenum Mo respectively with gold
Belong to any one in Ti-Cu CTB alloys, W-Cu tungsten-copper alloys or the Cr-Cu chrome copper or molybdenum copper Mo-Cu alloys of Cu compositions
Plant or two or more combinations.The material of the transition zone 150 also includes non-metallic material silica SiO2.The transition zone
150 thickness is 10 nanometers to 600 nanometers, or 400 nanometers, 500 nanometers or 600 nanometers.
The LED encapsulation ceramic printed-circuit board 100 in reflecting layer is provided with, the ceramic base bottom 110 is mutually in totality
Upper parallel relative both side surface is referred to as substrate A face 112 and substrate B face 114；This side of the substrate A face 112 is arranged
Have the electronic circuit for fixing or welding LED chip and/or for heat conduction, radiating cover copper；The substrate B face 114 this
Side is provided with reflection layer 130, and the reflection layer 130 is used to reflect that LED illuminator sends and through ceramic base bottom
Light.Reflection layer 130 improves the overall reflectivity of LED encapsulation ceramic printed-circuit board, and due to the reflection layer 130
One side directly couple with substrate B face 114, will not be with air directly contact, it is therefore prevented that the oxidation of reflecting surface or other are physico
Change is learned, oxidation can allow reflecting surface to maintain good reflection characteristic for a long time；If the another side of the reflection layer 130 not plating
Other layers, can be also passivated in atmosphere, in the alundum (Al2O3) layer that Surface Creation property is highly stable, itself have and protect well
Effect, back of the body plating homogenous material metallic aluminium have met functional requirement.Reflection layer 130 is from preferred for all band optical wavelength
Highly reflective material, these materials are most preferably metallic aluminium Al, and the second choice of opimization is silver Ag or copper Cu or gold Au.
This technology is adapted to the ceramic substrate of 1 millimeter and less than 1 millimeter thickness of thickness；Preferred reflecting layer coating film thickness is 60
Nanometer to 200 nanometers, if but in order to composite heat-conducting coefficient or improve board structure intensity needs, penetrating layer coating film thickness can set
Put between 50 nanometers to 300 microns, thicker its composite heat-conducting coefficient of thickness and mechanical strength are bigger.If increase composite guide
The needs of hot coefficient or raising board structure intensity, reflecting layer plated film can be more than 1 micron even 300 microns.The light is anti-
The one side for penetrating layer 130 couples with the substrate B face 114 of the ceramic base bottom 110, on the another side of the reflection layer 130 also
Matcoveredn 160 is set.One side protective layer 160 can avoid the light decay that the physicochemical change in reflecting layer is brought；The opposing party
Face reaches composite heat-conducting coefficient and knot that certain thickness can also greatly improve base plate for packaging when protective layer is high-thermal conductive metal
Structure intensity；The simultaneously setting of protective layer is typically to when meeting LED chip and being installed on LED encapsulation ceramic printed-circuit boards
The needs of Reflow Soldering, protect reflecting layer not to be affected in the technical process of Reflow Soldering.When protective layer material therefor is copper,
As copper is also oxidizable, generally also need to be surface-treated layers of copper, such as oxidation barrier film, plating nickel gold Au etc., i.e., described guarantor
Material is coated with also for nickel and/or the oxidation barrier film of gold Au in sheath 160 and the one side of external contact.
Before plating, in order to increase the adhesion between protective layer and reflecting layer, a transition zone plus can be plated,
Transition zone 150 is additionally provided between i.e. described reflection layer 130 and the protective layer 160.The preferably Ti titaniums of the transition zone, w
The metals, or SiO2 etc. such as tungsten, chromium Cr be nonmetallic, or the mixing coating of protective layer material and previous materials for example
CTB alloy or tungsten-copper alloy.
Plate reflecting layer, protective layer and transition zone in above-mentioned technical process, preferred plated film mode is PVD, such as magnetic control splashes
Penetrate.Certainly economically consider, when coating film thickness needs to thicken, it would however also be possible to employ electro-plating method thickeies film layer.Plating
Copper is thickeied to 300 microns or more.Above-mentioned technical process can also first pre-process cleaning before starting, the clear of surfacing is treated in holding
It is clean；Above-mentioned technical process can carry out cleaning after terminating again, dry and anti-oxidation process after packed again.
The present invention has significant advantage in LED package applications field, especially high power density LED application, leads to
It is translucent that Chang Houdu is 0.254 millimeter of aluminum oxide ceramic substrate, has very big light as LED package substrate
Damage, especially LED encapsulating products Hou Guang Damage on radiator are arranged on by thermal interfacial material can be bigger, compared to same material
1 millimeters thick ceramic packaging substrate about loses the light more than 60%.According to the solution of the present invention, 1 millimeters thick ceramic packaging substrate it is non-
After reflecting layer is arranged on LED chip solder side, the LED encapsulating products ， Guang Damage of same packaging technology can be reduced to 10%.
The LED encapsulation ceramic printed-circuit board high reflectances high thermal conductivity for being provided with reflecting layer of the present invention is ceramic simultaneously
Substrate, the copper for disregarding the i.e. LED encapsulating faces in front are thick, and when ceramic bases thickness is 0.254 millimeter, reflecting layer for copper and has a thickness is
0.300 millimeter is, the composite heat-conducting coefficient of its theoretical calculation>52W/m.k, is much better than the pottery of the 1 most millimeters thick of industry
Porcelain printed circuit board, the thick copper of protective layer thickening to 0.3 millimeter also considerably increase the structural strength of ceramics while also significantly
Heat conductivility is improve, is particularly suitable for highly reliable, high power density, base plate for packaging is done in the LED applications of high insulation.
The LED encapsulation ceramic printed-circuit boards for being provided with reflecting layer of the present invention should be and be provided with reflecting layer, should
Reflecting layer is used to reflect that LED illuminator sends and through the light of ceramic base bottom；The one side in reflecting layer is with the ceramic base
The substrate B face connection of bottom, the another side in reflecting layer is directly exposed or arranges matcoveredn.Reflecting layer exposed surface itself occurs blunt
Changing reaction makes that reflecting layer is protected or overlying sheath does not prevent oxidation with air directly contact, can remain good anti-for a long time
Penetrate characteristic；Protective layer can avoid the light decay that the physicochemical change in reflecting layer is brought, and can pass through to increase protective layer metal
Thickness is greatly improving the composite heat-conducting coefficient and structural strength of base plate for packaging.
In the present invention, it is also sometimes used as " connection " in " connection " word other documents in the prior art, but
The intended scope of " connection " in present specification is referred not only to " connection ", the meaning that part occasion also " is combined ".
Embodiments of the invention are the foregoing is only, the scope of the claims of the present invention is not thereby limited, it is every using invention
Equivalent structure or equivalent flow conversion that specification and accompanying drawing content are made, or directly or indirectly it is used in other related technologies
Field, is included within the scope of the present invention.
Claims (19)
1. in a kind of, set reflection layer, for the ceramic printed-circuit board (100) of LED encapsulation, including for being electrically insulated and/or use
In the ceramic base bottom (110) of heat conduction/radiating, by the ceramic base bottom (110) mutually relative both sides table parallel on the whole
Face is referred to as substrate A face (112) and substrate B face (114)；It is provided with for fixing or welding on the substrate A face (112)
The region of LED chip and the electronic circuit electrically connected with chip and/or copper is covered for heat conduction, radiating；The substrate B face
(114) be provided with reflection layer (130) on, reflection layer (130) for by each LED on substrate A face (112) toward non-light direction
The light that the ceramic base bottom (110) leaks is projected and passed through, is reflected back toward light direction, so as to improve total luminous effect
Rate.
2. it is according to claim 1 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The reflection layer (130) is covered by metal material cloth and is constituted, in being aluminium Al, gold Au, silver Ag, rhodium Rh and copper Cu these metals
Any one or two kinds and two or more combinations constitute.
3. it is according to claim 1 for LED encapsulation ceramic printed-circuit board（100）, it is characterised in that
The one side of the reflection layer (130) is closely overlying on the substrate B face (114) of the ceramic base bottom (110), and the light is anti-
Penetrate.
4. it is according to claim 3 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The thickness of the protective layer (160) is more than or equal to 100 nanometers.
5. it is according to claim 3 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The material of the protective layer (160) is copper Cu or nickel or silica SiO2。
6. it is according to claim 5 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The protective layer (160) for copper Cu when, in its one side with external contact must plating oxidation barrier film, this is anti-oxidant thin
The material of film is nickel and/or gold Au.
7. it is according to claim 5 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The protective layer (160) for copper Cu when, be OPS in the one side of the protective layer (160) and external contact, that is, cover last layer
Organic guarantor welds film.
8. it is according to claim 1 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The thickness of the reflection layer (130) is 50 nanometers to 0.300 millimeter.
9. it is according to claim 8 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The thickness of the reflection layer (130) is 100 nanometers to 500 nanometers.
10. it is according to claim 1 for LED encapsulation ceramic printed-circuit board, it is characterised in that
The thickness of the ceramic base bottom (110) is 0.100 millimeter to 1.000 millimeters.
11. ceramic printed-circuit boards for LED encapsulation according to claim 10., it is characterised in that
The thickness of the ceramic base bottom (110) is 0.100 millimeter to 0.635 millimeter.
12. ceramic printed-circuit boards for LED encapsulation according to claim 2, it is characterised in that
Transition zone (150) is additionally provided between the reflection layer (130) and the protective layer (160).
13. ceramic printed-circuit boards for LED encapsulation according to claim 12, it is characterised in that
The material of the transition zone (150) include any one in titanium Ti, tungsten W, chromium Cr He Molybdenum Mo these metals or two kinds and
Two or more combinations.
14. ceramic printed-circuit boards for LED encapsulation according to claim 12, it is characterised in that
The material of the transition zone (150) includes that titanium Ti, tungsten W, chromium Cr and molybdenum Mo these metals constitute Ti- with metallic copper Cu respectively
Any one or two kinds and two kinds in Cu CTB alloys, W-Cu tungsten-copper alloys and/or Cr-Cu chrome copper, Mo-Cu alloys with
On combination.
15. ceramic printed-circuit boards for LED encapsulation according to claim 12, it is characterised in that
The material of the transition zone (150) also includes nonmetallic silica SiO2。
16. ceramic printed-circuit boards for LED encapsulation according to claim 12, it is characterised in that
The thickness of the transition zone (150) is 10 nanometers to 600 nanometers.
A kind of 17. Nei Let reflection layers, the preparation method for the ceramic printed-circuit board of LED encapsulation are comprised the following steps：
A1：It is in one piece of slice-shaped, for being electrically insulated and/or for the ceramic base bottom (110) of heat conduction/radiating, which is mutual
Parallel relative both side surface is referred to as substrate A face (112) and substrate B face (114) on the whole；The substrate A face (112)
On be provided with region for fixing or welding LED chip and the electronic circuit electrically connected with chip and/or for heat conduction, dissipate
Hot covers copper；And on the substrate B face (114) then vacuum plating a layer thickness in 60 nanometers to 200 nanometers of reflection layer
(130), leak for projecting and passing through the ceramic base bottom (110) each LED on substrate A face (112) toward non-light direction
Light, reflect back toward light direction, so as to improve total luminous efficiency；The material of the reflection layer (130) is aluminium Al, gold
Any one in Au, copper Cu, rhodium Rh and/or silver Ag these metals or two kinds and two or more combinations.
18. according to claim 17 ceramic printed-circuit board preparation method, also including step：
A3：The one side of the reflection layer (130) is closely overlying on the substrate B face (114) of the ceramic base bottom (110), should
On the another side of reflection layer (130) then vacuum plating a layer thickness in 400 nanometers to 600 nanometers of protective layer (160)；It is described
The material of protective layer (160) is copper Cu or nickel or silica SiO2。
19. according to claim 18 ceramic printed-circuit board preparation method, after stating step A1 on the implementation, A3 steps
Before protective layer (160) described in middle plating, also including step
A2：The reflection layer (130) is closely overlying on the substrate B face (114) of the ceramic base bottom (110), in the light
On the another side in reflecting layer (130), first vacuum plating a layer thickness is in 400 nanometers to 600 nanometers of transition zone (150)；It is described
The material of transition zone (150) includes any one in Titanium Ti, tungsten w, chromium Cr and molybdenum Mo these metals or two or more
Combination；Or the material of the transition zone (150) includes what Titanium Ti, tungsten W, chromium Cr and molybdenum Mo were constituted with Ni metal respectively
In Ti-Cu CTB alloys, W-Cu tungsten-copper alloys or Cr-Cu chrome copper, molybdenum copper Mo-Cu alloys any one or it is two or more
Combination；And the material of the transition zone (150) also includes nonmetallic silica SiO2；
Just implement above-mentioned steps A3 after step A2 so that the transition zone (150) be arranged on the reflection layer (130) and
Between protective layer (160).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610612041.5A CN106549091A (en) | 2016-07-31 | 2016-07-31 | Reflection layer, the ceramic printed-circuit board encapsulated for LED and method are set inside |
| PCT/CN2017/091842 WO2018024070A1 (en) | 2016-07-31 | 2017-07-05 | Ceramic printed circuit board provided with light reflection layer therein and used for led packaging, and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610612041.5A CN106549091A (en) | 2016-07-31 | 2016-07-31 | Reflection layer, the ceramic printed-circuit board encapsulated for LED and method are set inside |
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Cited By (5)
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| WO2018024070A1 (en) * | 2016-07-31 | 2018-02-08 | 深圳市微纳科学技术有限公司 | Ceramic printed circuit board provided with light reflection layer therein and used for led packaging, and method |
| CN109561585A (en) * | 2017-09-27 | 2019-04-02 | 深圳市博敏电子有限公司 | Ceramic base circuit board preparation process |
| CN110469787A (en) * | 2019-08-19 | 2019-11-19 | 深圳市百柔新材料技术有限公司 | A kind of production method for printing LED backlight plate |
| CN110867508A (en) * | 2018-08-28 | 2020-03-06 | 青岛海信电器股份有限公司 | PCB (printed circuit board), manufacturing method thereof, lamp panel and display device |
| CN113424016A (en) * | 2019-02-15 | 2021-09-21 | 德国艾托特克公司 | Method for obtaining information on organic solderability preservative layer on printed circuit board |
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| CN110867508A (en) * | 2018-08-28 | 2020-03-06 | 青岛海信电器股份有限公司 | PCB (printed circuit board), manufacturing method thereof, lamp panel and display device |
| CN113424016A (en) * | 2019-02-15 | 2021-09-21 | 德国艾托特克公司 | Method for obtaining information on organic solderability preservative layer on printed circuit board |
| CN110469787A (en) * | 2019-08-19 | 2019-11-19 | 深圳市百柔新材料技术有限公司 | A kind of production method for printing LED backlight plate |
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| WO2018024070A1 (en) | 2018-02-08 |
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