CN106548867A - A kind of low D.C. resistance three-terminal capacitor and preparation method and material - Google Patents
A kind of low D.C. resistance three-terminal capacitor and preparation method and material Download PDFInfo
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- CN106548867A CN106548867A CN201611195702.5A CN201611195702A CN106548867A CN 106548867 A CN106548867 A CN 106548867A CN 201611195702 A CN201611195702 A CN 201611195702A CN 106548867 A CN106548867 A CN 106548867A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
Abstract
The present invention relates to ceramic capacitor technical field, and in particular to a kind of low D.C. resistance three-terminal capacitor, including major axis medium diaphragm and short axle medium diaphragm；Major axis medium diaphragm and short axle medium diaphragm are staggered to form interior electrode arranging structure；Interior electrode arranging structure is staggered to constitute or be staggered to constitute or be staggered by electrode in electrode in two the second long axis directions and two the second short-axis directions by electrode in electrode in second long axis direction and second short-axis direction by electrode in electrode in two the first long axis directions and two the first short-axis directions and is constituted.Low D.C. resistance three-terminal capacitor provided in an embodiment of the present invention, compared with prior art by change major axis medium diaphragm and short axle medium diaphragm mediate form and thickness makes the D.C. resistance of capacitor have decline by a relatively large margin, and uniformity is better than conventional products.
Description
Technical field
The present invention relates to ceramic capacitor technical field, and in particular to a kind of low D.C. resistance three-terminal capacitor and preparation side
Method and material.
Background technology
Three-terminal capacitor is the common components of filter circuit.Existing three-terminal capacitor is actually multi-layer ceramics lamination
Formula dual-capacitor structure, its internal structure are that the porcelain film for having electrode in cross replaces lamination, and alternately draw termination electrode for three
End lead-out mode.After D.C. resistance is the logical upper direct current of element, the resistance for being presented, be three-terminal capacitor important indicator it
One.D.C. resistance is bigger, and product power consumption heating is more serious.
The content of the invention
For weak point present in the problems referred to above, the present invention provides a kind of low D.C. resistance three-terminal capacitor and preparation
Method and material.
For achieving the above object, the present invention provides a kind of low D.C. resistance three-terminal capacitor, including major axis medium diaphragm and
Short axle medium diaphragm, the major axis medium diaphragm and the short axle medium diaphragm are staggered to form interior electrode arranging structure；
In two the first long axis directions, in electrode and two the first short-axis directions, electrode is staggered composition or by the
In two long axis directions in electrode and second short-axis direction electrode be staggered composition or by described in two second long axis direction
In interior electrode and short-axis direction described in two second, electrode is staggered composition.
In above-mentioned low D.C. resistance three-terminal capacitor, preferably, in second long axis direction, the thickness of electrode is institute
State electrode in the first long axis direction 1.8 times, in second short-axis direction, the thickness of electrode is in first short-axis direction
1.8 times of electrode.
In above-mentioned technical proposal, low D.C. resistance three-terminal capacitor provided in an embodiment of the present invention, with prior art phase
The D.C. resistance of capacitor is made to have larger than the mediate form and thickness by changing major axis medium diaphragm and short axle medium diaphragm
The decline of amplitude, and uniformity is better than conventional products.
A kind of preparation method of low D.C. resistance three-terminal capacitor, the method are comprised the following steps：
The porcelain for preparing is starched and is evenly coated in PET film by the thickness of setting so as to be uniform to be dried, form desired thickness
Multi-disc blank ceramic diaphragm；
A part of blank ceramic diaphragm in multi-disc blank ceramic diaphragm has been printed as necessarily using webby printing principle
The major axis medium diaphragm and short axle medium diaphragm of shape and size；
Major axis medium diaphragm, short axle medium diaphragm are entered with the blank ceramic diaphragm for not carrying out serigraphy as protective layer
Row superposition, is pressed into a bar block by the blank viscosity of curtain coating ceramic diaphragm itself and the pressure of lamination machine；
Bar block and even pressing plate are placed in hermetic bag to carry out vacuumizing process, carries out even pressure process and formed in placing into even press
Bar block after even pressure；
The bar block after even pressure is cut according to the size of regulation using cutting machine, into single electric capacity chip base substrate；
Macromolecule organic in electric capacity chip base substrate is carried out into plastic removal process；
Electric capacity chip base substrate after plastic removal carries out high temperature sintering process again；
By the electric capacity chip base substrate for sintering, by adding the ablation of mill Jie and chip chamber high speed barreling capacitance core
The corner barreling of piece base substrate fully draws inner electrode layer into chamfering, beneficial to the abundant link of internal and external electrode, for ensureing electrical resistance
Energy；
The electric capacity chip base substrate two ends for forming chamfering are respectively coated with into upper silver/copper external electrode slurry, drying and processing shape is carried out
Into the external electrode of the electric capacity chip base substrate silver/copper of solidification；
The external electrode of the electric capacity chip base substrate silver/copper after solidification burns end through high temperature again and processes；
Ground floor nickel metal bottom is plated from inside to outside successively using electroplating deposition method outside electric capacity chip after the completion of end is burnt
The second layer tin metal of layer and covering nickel dam, ultimately forms capacitor product.
In the preparation method of above-mentioned low D.C. resistance three-terminal capacitor, preferably, plastic removal highest under common aerobic environment
Temperature between 280 DEG C -325 DEG C, insulation, total duration is between 60-168 hours.
In the preparation method of above-mentioned low D.C. resistance three-terminal capacitor, preferably, sintering processes maximum temperature is 1050
Between DEG C -1170 DEG C.
In the preparation method of above-mentioned low D.C. resistance three-terminal capacitor, preferably, sintering process is divided into the plastic removal stage, rises
Thermophase, holding stage and temperature-fall period.
In the preparation method of above-mentioned low D.C. resistance three-terminal capacitor, preferably, the heating rate in plastic removal stage is 100
DEG C -150 DEG C/h, temperature rise period speed is 180 DEG C -250 DEG C/h, and temperature retention time is in 2-4 hours.
In the preparation method of above-mentioned low D.C. resistance three-terminal capacitor, preferably, the temperature at the burning end is up to 760
DEG C -850 DEG C, the belt speed for burning end is 6cm/ minutes.
In above-mentioned technical proposal, low D.C. resistance three-terminal capacitor provided in an embodiment of the present invention, with prior art phase
Than with lower D.C. resistance, with more preferable uniformity, during use, element heating amount is lower.
A kind of material of capacitor, including porcelain slurry, the porcelain are starched by porcelain powder, adhesive, dispersant, defoamer, plasticizer
Constitute with toluene, alcohol mixed solvent；Wherein,
The weight ratio of the porcelain powder and described adhesive is 1：0.3-0.4；
The weight ratio of the porcelain powder and the dispersant is 1：0-0.05；
The weight ratio of the porcelain powder and the defoamer is 1：0-0.02；
The weight ratio of the porcelain powder and the plasticizer is 1：0-0.03；
The porcelain powder and the toluene, the weight ratio of alcohol mixed solvent are 1:0.65-1.2.
In above-mentioned technical proposal, low D.C. resistance three-terminal capacitor provided in an embodiment of the present invention, with prior art phase
Than with lower D.C. resistance, with more preferable uniformity, during use, element heating amount is lower.
Description of the drawings
Fig. 1 is the first structural representation of capacitor in first embodiment of the invention；
Fig. 2 is second structural representation of capacitor in first embodiment of the invention；
Fig. 3 is the third structural representation of capacitor in first embodiment of the invention.
Fig. 4 is the flow chart of the preparation method of low D.C. resistance three-terminal capacitor in second embodiment of the invention.
In figure：1st, electrode in the first long axis direction；2nd, electrode in the first short-axis direction；3rd, electrode in the second long axis direction；
4th, electrode in the second short-axis direction.
Specific embodiment
Accompanying drawing is combined below by specific embodiment to be described in further detail the present invention.
Embodiment 1：
Low D.C. resistance three-terminal capacitor, as shown in Figure 1, 2, 3, by the major axis medium diaphragm and the short axle deielectric-coating
Piece is staggered to form interior electrode arranging structure.In two the first long axis directions, in electrode 1 and two the first short-axis directions, electrode 2 interlocks
Rearrange or be staggered by electrode 4 in electrode 3 in second long axis direction and second short-axis direction constitute or by
In long axis direction described in two second, in electrode 3 and short-axis direction described in two second, electrode 4 is staggered composition.Three kinds of modes
The resistance sections product that is multiplied can equally be played a part of, so as to reduce the resistance formed by interior electrode.
In second long axis direction, the thickness of electrode 3 is 1.8 times of electrode 1 in first long axis direction, described
In two short-axis directions, the thickness of electrode 4 is 1.8 of electrode 2 in first short-axis direction.While interior increased electrode thickness, some works
The technological parameter of sequence need to make corresponding adjustment, it is ensured that the structure of product is not in problem.Adjustable in technique, cost is subjected to
Under conditions of, interior thickness of electrode is thicker, can reach the low-resistance effect of drop better.
The calculating of three-terminal capacitor D.C. resistance can be reduced to conventional, electric-resistance model, and its definition is R=ρ * l/s.Product
Inner electrode is fixed, and electricalresistivityρ is definite value；Product length is fixed, and length l of resistance is definite value.Therefore can be by increasing electricity
The method of area s is stopped dropping low-resistance size.After interior electrode silk screen design is fixed, the length of resistor area is fixed,
Can be accumulated come increasing section by way of increasing interior thickness of electrode, so as to reduce the size of overall resistance.For this theoretical mould
Type, has tested the product of 3 kinds of structures.By Data Comparison come the realizability of substantive approach.(resistance value of product regards concrete product
Depending on product, notebook data does not have universal representative a, reference significance with across comparison).
The interior electrode form of conventional three-terminal capacitor alternates folded for electrode in long axis direction with electrode in short-axis direction
Layer, forms capacitance structure.The present invention forms the method for double-deck inner electrode and cuts increasing resistance by increasing inner electrode layer number
The size of area.Being compared with conventional structure product by DC resistance made by this mode has larger decline, and concentrates
Rate is more preferable.The mean direct resistance value of product long axis direction is obtained in 30.12m Ω using the method.Batch process ability CpK is
1.00。
Increase the size of resistance sections product by way of increasing the print thickness of interior electrode.In increasing, electrode print leads to
It is often to increase the mode of screen thickness and multiple printing to realize.Increase silk screen first in the design of silk screen and latex is thick
Degree, improves single print thickness.Secondly interior electrode pattern is printed out on blank diaphragm, after diaphragm is dried, continues having interior electricity
Aligned using figure on the diaphragm of pole figure shape, secondary on existing interior electrode and multiple printing directly increases thickness of electrode.
The mean direct resistance value of product long axis direction is obtained in 27.61m Ω using the method.Batch process ability CpK is 1.11.
With reference to both above structure, not misconstruction and in increasing thickness of electrode structure.Further reduce direct current
The size of resistance.The mean direct resistance value of product long axis direction is obtained in 12.82m Ω using the method.Batch process ability CpK
For 1.51.
Data Comparison：
Product final test distribution results using the product of three kinds of different structures are as follows：
Embodiment 2：
The preparation method of low D.C. resistance three-terminal capacitor, as shown in figure 3,
Step 101：The porcelain for preparing is starched and is evenly coated in PET film by the thickness of setting so as to be uniform to be dried, form institute
Need the multi-disc blank ceramic diaphragm of thickness；This method can ensure to obtain the ceramic diaphragm that thickness is uniform, outward appearance is good.
Step 102：A part of blank ceramic diaphragm in multi-disc blank ceramic diaphragm is printed using webby printing principle
Into the major axis medium diaphragm and short axle medium diaphragm that have definite shape and size, the interior electrode of capacitor is formed.Silk screen print method
Can pass through to control planarization, the continuity of printed pattern, to ensure to obtain moderately good electric property and unfailing performance.
Step 103：Major axis medium diaphragm, short axle medium diaphragm and the blank pottery for not carrying out serigraphy as protective layer
Porcelain diaphragm is overlapped, and is pressed into a bar block by the blank viscosity of curtain coating ceramic diaphragm itself and the pressure of lamination machine；Lamination
The advantage of technique is that machine ensures precisely to align, and requires according to product design, obtains the bar block for possessing required electrical property.
Step 104：Bar block and even pressing plate are placed in hermetic bag to carry out vacuumizing process, carries out even pressure in placing into even press
Process forms the bar block after even pressure；The advantage of warm water isostatic pressing process is bar block all directions uniform force, it is not easy to deformed.
Step 105：The bar block after even pressure is cut according to the size of regulation using cutting machine, into single electric capacity chip base
Body；Straight knife cutting is obtained the good chip capacity of regular shape, dimensional uniformity.
Step 106：Macromolecule organic in electric capacity chip base substrate is carried out into plastic removal process；In step 106, commonly have
Under oxygen environment, plastic removal maximum temperature is between 280 DEG C -325 DEG C, insulation, and total duration is between 60-168 hours.Only by these
Organic matter is fully excluded totally, can just make product reduce the cracking risk of sintering process, to ensure with good electric property.
Step 107：Electric capacity chip base substrate after plastic removal carries out high temperature sintering process again；Sintering processes maximum temperature is 1050
Between DEG C -1170 DEG C；Sintering process is divided into plastic removal stage, temperature rise period, holding stage and temperature-fall period；The intensification in plastic removal stage
Speed is 100 DEG C -150 DEG C/h, and temperature rise period speed is 180 DEG C -250 DEG C/h, and temperature retention time is in 2-4 hours.Properly
Sintering curre be committed step that product has excellent machinery and electric property.
Step 108：By the electric capacity chip base substrate for sintering, by the ablation for adding mill Jie and chip chamber high speed barreling
The corner barreling of electric capacity chip base substrate into chamfering, inner electrode layer is fully drawn, beneficial to the abundant link of internal and external electrode, for protecting
Card electric property.
Step 109：The electric capacity chip base substrate two ends for forming chamfering are respectively coated with into upper silver/copper external electrode slurry, are dried
Dry-cure forms the external electrode of the electric capacity chip base substrate silver/copper of solidification.
Step 110：The external electrode of the electric capacity chip base substrate silver/copper after solidification burns end through high temperature again and processes, the burning end
Temperature be up to 760 DEG C -850 DEG C, burn end belt speed be 6cm/ minutes, preferably 800 DEG C.The making of external electrode is to draw
The interior electrode of inside is embedded in, electric property is formed.
Step 111：The electric capacity chip behind end will be burnt on its silver/copper external electrode surface, plated using electroplating deposition method respectively
The second layer tin metal of ground floor nickel metal back layer and covering nickel dam.Nickel dam is acted on as thermal barrier, it is to avoid capacitor
Body is subject to excessive thermal shock, tin layers to function as solderable metal layers in welding process, it is ensured that capacitor has
Good solderability.Product after plating ultimately forms capacitor product.
Embodiment 3：
The material of capacitor, including porcelain slurry：The porcelain is starched by porcelain powder, adhesive, dispersant, defoamer, plasticizer and first
Benzene, alcohol mixed solvent composition；Wherein,
The weight ratio of the porcelain powder and described adhesive is 1：0.3-0.4；
The weight ratio of the porcelain powder and the dispersant is 1：0-0.05；
The weight ratio of the porcelain powder and the defoamer is 1：0-0.02；
The weight ratio of the porcelain powder and the plasticizer is 1：0-0.03；
The porcelain powder and the toluene, the weight ratio of alcohol mixed solvent are 1:0.65-1.2.
The diaphragm formed after curtain coating according to the slurry that proportions go out has consistency of thickness good, and toughness is strong, surface
Highly polished the characteristics of.
Example：
| Porcelain powder | Adhesive | Dispersant | Defoamer | Plasticizer | Solvent |
| 1000g | 320g | 2g | 1g | 3g | 750g |
| 1000g | 380g | 1g | 1g | 2g | 900g |
The preferred embodiments of the present invention are the foregoing is only, the present invention is not limited to, for the skill of this area
For art personnel, the present invention can have various modifications and variations.It is all within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. a kind of low D.C. resistance three-terminal capacitor, it is characterised in that include：Major axis medium diaphragm and short axle medium diaphragm；
The major axis medium diaphragm and the short axle medium diaphragm are staggered to form interior electrode arranging structure；
The interior electrode arranging structure is by electrode staggered row in electrode in two the first long axis directions and two the first short-axis directions
Row are constituted or are staggered by electrode in electrode in second long axis direction and second short-axis direction and constitute or by two
In long axis direction described in second, in electrode and short-axis direction described in two second, electrode is staggered composition.
2. low D.C. resistance three-terminal capacitor according to claim 1, it is characterised in that：Electricity in second long axis direction
The thickness of pole is 1.8 times of electrode in first long axis direction, and in second short-axis direction, the thickness of electrode is described
1.8 times of electrode in one short-axis direction.
3. a kind of preparation method of the low D.C. resistance three-terminal capacitor as described in any one of claim 1-2, it is characterised in that
The method is comprised the following steps：
Step 101：The porcelain for preparing is starched and is evenly coated in PET film by the thickness of setting so as to be uniform to be dried, it is thick needed for being formed
The multi-disc blank ceramic diaphragm of degree；
Step 102：A part of blank ceramic diaphragm in multi-disc blank ceramic diaphragm has been printed as using webby printing principle
The major axis medium diaphragm and short axle medium diaphragm of definite shape and size；
Step 103：Major axis medium diaphragm, short axle medium diaphragm and the blank ceramic membrane for not carrying out serigraphy as protective layer
Piece is overlapped, and is pressed into a bar block by the blank viscosity of curtain coating ceramic diaphragm itself and the pressure of lamination machine；
Step 104：Bar block and even pressing plate are placed in hermetic bag to carry out vacuumizing process, and even pressure process is carried out in placing into even press
Form the bar block after even pressure；
Step 105：The bar block after even pressure is cut according to the size of regulation using cutting machine, into single electric capacity chip base substrate；
Step 106：Macromolecule organic in electric capacity chip base substrate is carried out into plastic removal process；
Step 107：Electric capacity chip base substrate after plastic removal carries out high temperature sintering process again；
Step 108：By the electric capacity chip base substrate for sintering, by adding the ablation of mill Jie and chip chamber high speed barreling electricity
Hold the corner barreling of chip base substrate into chamfering, fully draw inner electrode layer, beneficial to the abundant link of internal and external electrode, for ensureing electricity
Gas performance；
Step 109：The electric capacity chip base substrate two ends for forming chamfering are respectively coated with into upper silver/copper external electrode slurry, are carried out at drying
Reason forms the external electrode of the electric capacity chip base substrate silver/copper of solidification；
Step 110：The external electrode of the electric capacity chip base substrate silver/copper after solidification burns end through high temperature again and processes；
Step 111：Ground floor nickel gold is plated from inside to outside successively using electroplating deposition method outside electric capacity chip after the completion of end is burnt
The second layer tin metal of category bottom and covering nickel dam, ultimately forms capacitor product.
4. the preparation method of low D.C. resistance three-terminal capacitor according to claim 3, it is characterised in that：In step 106
In, under common aerobic environment plastic removal maximum temperature between 280 DEG C -325 DEG C, insulation, total duration is between 60-168 hours.
5. the preparation method of low D.C. resistance three-terminal capacitor according to claim 3, it is characterised in that：In step 107
In, sintering processes maximum temperature is between 1050 DEG C -1170 DEG C.
6. the preparation method of low D.C. resistance three-terminal capacitor according to claim 3, it is characterised in that：In step 107
In, sintering process is divided into plastic removal stage, temperature rise period, holding stage and temperature-fall period.
7. the preparation method of low D.C. resistance three-terminal capacitor according to claim 6, it is characterised in that：The plastic removal stage
Heating rate is 100 DEG C -150 DEG C/h, and temperature rise period speed is 180 DEG C -250 DEG C/h, and temperature retention time is in 2-4 hours.
8. the preparation method of low D.C. resistance three-terminal capacitor according to claim 3, it is characterised in that：In step 110
In, the temperature at the burning end is up to 760 DEG C -850 DEG C, and the belt speed for burning end is 6cm/ minutes.
9. a kind of material of the low D.C. resistance three-terminal capacitor as described in any one of claim 1-2, it is characterised in that include
Porcelain is starched：
The porcelain slurry is made up of porcelain powder, adhesive, dispersant, defoamer, plasticizer and toluene, alcohol mixed solvent；Wherein,
The weight ratio of the porcelain powder and described adhesive is 1：0.3-0.4；
The weight ratio of the porcelain powder and the dispersant is 1：0-0.05；
The weight ratio of the porcelain powder and the defoamer is 1：0-0.02；
The weight ratio of the porcelain powder and the plasticizer is 1：0-0.03；
The porcelain powder and the toluene, the weight ratio of alcohol mixed solvent are 1:0.65-1.2.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112397310A (en) * | 2020-10-20 | 2021-02-23 | 广东风华高新科技股份有限公司 | Printing silk screen equipment of multilayer ceramic capacitor and preparation method thereof |
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| US20120250218A1 (en) * | 2011-04-04 | 2012-10-04 | Tdk Corporation | Feedthrough multilayer capacitor |
| CN103000369A (en) * | 2012-12-11 | 2013-03-27 | 北京元六鸿远电子技术有限公司 | Method for preparing high voltage-resisting chip type ceramic capacitor |
| CN103325568A (en) * | 2012-03-23 | 2013-09-25 | 三星电机株式会社 | Electronic component and fabrication method thereof |
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| CN1941234A (en) * | 2005-09-30 | 2007-04-04 | Tdk株式会社 | Multilayer capacitor |
| CN101996765A (en) * | 2009-08-11 | 2011-03-30 | 索尼公司 | Capacitance element and resonance circuit |
| US20120250218A1 (en) * | 2011-04-04 | 2012-10-04 | Tdk Corporation | Feedthrough multilayer capacitor |
| CN103325568A (en) * | 2012-03-23 | 2013-09-25 | 三星电机株式会社 | Electronic component and fabrication method thereof |
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| CN112397310A (en) * | 2020-10-20 | 2021-02-23 | 广东风华高新科技股份有限公司 | Printing silk screen equipment of multilayer ceramic capacitor and preparation method thereof |
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