CN106531811A - Tribotronics transistor, NAND gate, trigger, register and counter - Google Patents
Tribotronics transistor, NAND gate, trigger, register and counter Download PDFInfo
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- CN106531811A CN106531811A CN201611029929.2A CN201611029929A CN106531811A CN 106531811 A CN106531811 A CN 106531811A CN 201611029929 A CN201611029929 A CN 201611029929A CN 106531811 A CN106531811 A CN 106531811A
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- 238000007667 floating Methods 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 20
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 230000001960 triggered effect Effects 0.000 claims abstract description 4
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- 229920000642 polymer Polymers 0.000 claims description 9
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000003993 interaction Effects 0.000 abstract description 7
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- 229920000307 polymer substrate Polymers 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 15
- 238000012360 testing method Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 4
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- 229920000344 molecularly imprinted polymer Polymers 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
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Abstract
The invention discloses a floating gate type tribotronics transistor, which comprises a base material and is characterized in that the base material comprises a channel layer, an insulating layer, a substrate layer, two metal electrodes, a metal gate, a polymer substrate, a metal film and a mobile friction piece, wherein the insulating layer is formed on the channel layer; the substrate layer is formed on the insulating layer; the two metal electrodes are respectively deposited at two different positions below the channel layer, and introduce a drain electrode and a source electrode of the floating type tribotronics transistor; the metal gate is formed on the substrate layer; the polymer substrate is formed on a gate conductive layer; the metal film is formed on the polymer substrate and connected with the metal gate through a via hole; and the mobile friction piece can move under the action of an external force and is contacted with or separated from the metal film. The invention further provides an NAND gate, a trigger, a register and a counter based on the floating gate type tribotronics transistor. According to the invention, sequential logic storage and calculation based on integrated electromechanical coupling control is realized based on an electromechanical sequential logic operation triggered by contact, and a problem of active direct interaction between an external environment and a silicon-based integrated circuit is solved.
Description
Technical field
The invention belongs to flexible electronic devices field, more particularly to a kind of friction electron-optical transistor and NAND gate, touch
Send out device, depositor and enumerator.
Background technology
As the development of IC technology, the demand of electronic product are also constantly being increased, logic circuit is in modern electricity
The status of core is occupied in sub- product.And current Internet of Things fast development needs to join closely external environment with electronic product
System, but existing logical block device be all " static state " and almost exclusively through the signal of telecommunication trigger or start, lack the external world
" dynamic " interaction mechanism of environment and logical device.
The content of the invention
(1) technical problem to be solved
In view of this, it is an object of the invention to provide a kind of floating boom formula friction electron-optical transistor and NAND gate, trigger,
Depositor and enumerator, to solving at least one technical problem present in above-mentioned prior art.
(2) technical scheme
To achieve these goals, the present invention provides a kind of floating boom formula friction electron-optical transistor, including：Base material, it is described
Base material includes：Channel layer, its material are n-type silicon；Insulating barrier, is formed on channel layer, and its material is silicon dioxide；Substrate
Layer, is formed on insulating barrier, and its material is heavily doped n-type silicon.Floating boom formula friction electron-optical transistor also includes：Two metal electricity
Pole, is deposited on two diverse locations under channel layer, draws drain electrode and the source electrode of floating boom formula friction electron-optical transistor；Gold
Category grid, is formed on the substrate layer；Polymeric substrate, is formed on grid conducting layer；Metal film, is formed at high score
On submounts, it is connected with metal gates by via；Mobile friction member, its material is high molecular polymer, and which can be outside
Power effect is lower to move, and metal diaphragm contacts or separates.
Preferably, when mobile friction member is with metal membrance separation, enhancement region, the conductive ditch in channel layer are formed in channel layer
Road width increases, the electric current I in conducting channelDSIncrease, floating boom formula friction electron-optical transistor is defined as in opening；
When mobile friction member is with metal diaphragm contacts, the conducting channel width in channel layer reduces, the electric current I in conducting channelDSReduce,
Floating boom formula friction electron-optical transistor is defined as being closed.
The present invention also provides a kind of friction electronics NAND gate, including above-mentioned floating boom formula friction electron-optical transistor, one
Individual p-type field-effect transistor and a N-shaped field-effect transistor；Mobile friction member is supported by lucite, and upper and lower surface is height
Molecularly Imprinted Polymer material；Mobile friction member is moved between two floating boom formula friction electron-optical transistors so that mobile friction member
Upper and lower surface and two floating boom formulas friction electron-optical transistors metal diaphragm contacts or separate；Underlying floating boom formula friction
The drain electrode of electron-optical transistor is connected supply voltage, underlying floating boom formula franklinic electricity with the source electrode of p-type field-effect transistor
Son is learned the source electrode of transistor and is connected with the drain electrode of p-type field-effect transistor, connects outfan, and rubs with floating boom formula above
Wipe the drain electrode connection of electron-optical transistor；The source electrode connection N-shaped field effect of floating boom formula friction electron-optical transistor above
The drain electrode of transistor；The source ground of N-shaped field-effect transistor；The grid of p-type field-effect transistor and N-shaped field-effect transistor
It is connected, as electric field input.
Preferably, supply voltage is 5V；When electric field input terminal voltage is 5V, input state is defined as " 1 ", electric field input
When voltage is 0V, input state is defined as " 0 "；When external force suffered by mobile friction member is release conditions, moves friction member and be located at
The metal diaphragm contacts of the floating boom formula friction electron-optical transistor of top, input state are defined as " 0 ", external force suffered by mobile friction member
For applying during state, mobile friction member is moved down under external force, with underlying floating boom formula friction electronics crystal
The metal diaphragm contacts of pipe, input state are defined as " 1 "；When the voltage of outfan is low level, output state is defined as " 0 ", defeated
When the voltage for going out end is high level, output state is " 1 ".
The present invention also provides a kind of friction electronics S-R triggers, including two above-mentioned friction electronics NAND gate and
One latch, two friction electronics NAND gate connect external force input, the electricity of one of friction electronics NAND gate jointly
Input is ES, the electrical input of another friction electronics NAND gate is ER, the outfan point of two friction electronics NAND gate
Not Lian Jie latch two inputs.
The present invention also provides a kind of friction electronics d type flip flop, including two above-mentioned friction electronics NAND gate and
Individual latch, two friction electronics NAND gate connect external force input, one of the electric defeated of electronics NAND gate that rub jointly
Enter end for ED, EDBy one it is non-behind the door as another friction electronics NAND gate electrical input, two friction electronics with
The outfan of not gate connects two inputs of latch respectively.
The present invention also provides a kind of friction three bit register of electronics, including three above-mentioned friction electronics d type flip flops,
The power input of three friction electronics d type flip flops connects external force input jointly, and electrical input is respectively ED0、ED1、ED2, friction
The outfan of three bit register of electronics is Q0、Q1、Q2。
The present invention also provides a kind of friction electronics T triggers, including an above-mentioned friction electronics NAND gate, one
Not gate, S-R triggers and the 2nd S-R triggers, the power input connection external force triggering of the electronics T triggers that rub, electricity
Input connects high level, and outfan connects the input of not gate, and the outfan of not gate is touched as the clock of S-R triggers
Send out, the output two ends of S-R triggers connect the input of the 2nd S-R triggers, the input S of S-R triggers respectively
Hold as external electricity input ETWith the corresponding feedback output end of the 2nd S-R triggers, the input R ends of S-R triggers are external
Electric power is input into ETWith the corresponding feedback output end of the 2nd S-R triggers.
The present invention also provides a kind of friction three digit counter of electronics, including three above-mentioned friction electronics T triggers
With a two ends input and door and a three ends input and door, three friction electronics T triggers connect external force jointly to be triggered, the
The electrical input of one friction electronics T trigger is ET0=" 1 ", the outfan of first trigger is used as second franklinic electricity
Son learns the electrical input E of T triggersT1, first rub electronics T triggers and second the defeated of electronics T triggers that rub
The outfan for going out end as the input of two ends and the input of door, the input of two ends and door is used as the 3rd friction electronics T trigger
Input ET2, outfan three ends of connection of three friction electronics T triggers are enumerator with the input of door, outfan
Enter bit-identify C.
(3) beneficial effect
Friction nanometer power generator is combined by the present invention with silicon-based field-effect transistors, and composition floating boom formula friction electronics are brilliant
Body pipe, then floating boom formula friction electron-optical transistor and conventional field effect transistor are integrated into composition stress-electric coupling input
Friction electronics NAND gate, the NAND gate can carry out logical operationss to outside machinery triggering and electricity triggering, be converted into logic electricity
Flat output.Based on the friction electronics NAND gate, the various friction electronics triggers of proposition and sequential logical circuit, illustrate
The storage of outside machinery triggering and estimated performance, realize the direct interaction of external environment and si-substrate integrated circuit, on man-machine boundary
There is important application prospect in face, micro-nano mechanical storage, intelligence instrument and Internet of Things.
Description of the drawings
Fig. 1 is the structural representation of floating boom formula friction electron-optical transistor；
Fig. 2 (a)-(b) is the fundamental diagram of floating boom formula friction electron-optical transistor；
Fig. 3 is the structural representation of friction electronics NAND gate；
Fig. 4 (a)-(c) is the equivalent circuit diagram of friction electronics NAND gate and test result；
Fig. 5 (a)-(b) is the equivalent circuit diagram of friction electronics S-R triggers and test result；
Fig. 6 (a)-(b) is the equivalent circuit diagram of friction electronics d type flip flop and test result；
Fig. 7 is the equivalent circuit diagram of friction electronics depositor；
Fig. 8 (a)-(b) is the equivalent circuit diagram of friction electronics T triggers and test result；
Fig. 9 (a)-(b) is the equivalent circuit diagram of friction electronics enumerator and test result.
Specific embodiment
For making the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
Existing logical block device is all " static state " to trigger or start almost exclusively through the signal of telecommunication, is lacked extraneous
" dynamic " interaction mechanism of environment and logical device, this present situation are urgently improved.In view of this, present inventor will rub
Nano generator is combined with conventional field effect transistor, develops the contact electrification field-effect transistor of external force touch-control, and with
Based on this, device proposes the frontier friction electronics of Coupled Friction electricity and quasiconductor.Friction electronics are to utilize to rub
Wipe the electrostatic potential for producing and modulate signal transmission and transfer characteristic in quasiconductor as " gate-control signal ", to realize various man-machine friendships
The research of mutual functional device and application.The features such as friction electronics device has flexible and transparent, and can be with existing silicon substrate
Integrated circuit is combined, and is particularly well-suited to make the friction electronics silicon-based logic circuit of man-machine interaction, is realized external environment and patrol
Collect active " dynamic " interaction of device.
Specifically, the present invention provides a kind of floating boom formula friction electron-optical transistor, including：Base material, the base material include：Ditch
Channel layer, its material are n-type silicon；Insulating barrier, is formed on channel layer, and its material is silicon dioxide；Substrate layer, is formed at insulation
On layer, its material is heavily doped n-type silicon.Floating boom formula friction electron-optical transistor also includes：Two metal electrodes, are deposited on
Two diverse locations under channel layer, draw drain electrode and the source electrode of floating boom formula friction electron-optical transistor；Metal gates, are formed at
On the substrate layer；Polymeric substrate, is formed on grid conducting layer；Metal film, is formed on polymeric substrate, leads to
Via is connected with metal gates；Mobile friction member, its material is high molecular polymer, and which can move under external force,
With metal diaphragm contacts or separate.
The present invention also provide based on above-mentioned floating boom formula rub the friction electronics NAND gate of electron-optical transistor, trigger,
Depositor and enumerator.
In the following detailed description, for ease of explaining, elaborate many concrete details to provide to present invention enforcement
The comprehensive understanding of example, it should be noted that it will be appreciated by those skilled in the art that one or more embodiments are not having these to have
Can also be carried out in the case of body details.In other cases, known construction and device is diagrammatically embodied with letter
Change accompanying drawing.
Fig. 1 is the structural representation according to a kind of floating boom formula of exemplary embodiment of the invention friction electron-optical transistor.
As shown in figure 1, channel layer 1 be n-type silicon, between very low resistivity, with 3 heavily doped n-type silicon of substrate layer be one layer of titanium dioxide
Silicon insulating barrier 2.In lower surface left and right sides difference deposit metal electrodes 4 and the metal electrode 5 of channel layer 1, respectively as crystal
The drain electrode of pipe and source electrode, external power supply.The upper surface of substrate layer 3 is coated with the metal electrode 6 of one layer of Ohmic contact, used as field effect
The grid of transistor, is FGS floating gate structure.The total of 1-6 is integrated in into the lower surface of polymeric substrate 7, grid 6 and high score
The metal film 8 of 7 upper surface of submounts is connected by via.Moveable part is made up of high molecular polymer thin film 9, can be in external force
Effect is lower to move vertically, and produces contact friction with metal film 8 or separates.
Fig. 2 is the fundamental diagram according to the floating boom formula of above-mentioned example embodiment friction electron-optical transistor.Such as Fig. 2
A, shown in (), under the effect of external force F, high molecular polymer thin film 9 contacts generation friction with metal level 8, due to different electron beams
Ability is tied up, high molecular polymer thin film 9 is negatively charged, 8 positively charged of metal level.Now due to the mutual constraint of positive and negative charge, metal
Positive charge on layer 8 is not transferred on gate metal 6.As shown in Fig. 2 (b), when external force F is removed, high molecular polymer is thin
Film 9 is separated with metal level 8, and the positive charge constraint effect on metal level 8 is gradually weakened, and causes the charged moiety of metal level 8 to turn
Move on on grid 6.In the presence of positive charge on gate metal 6, transistor internal will produce internal electric field in vertical direction, electricity
Field direction points to channel layer 1 by gate metal electrode 6, and channel layer 1 produces charge polarization under internal electric field effect so that channel layer
1 upper surface attracts electronics, repels hole, produces enhancement region, increased the conducting channel width in channel layer 1, so as to increase
Electric current I in channel layer 1DSSize, serve the regulation and control effect that transports of semiconductor carriers.When external force F is acted on again, high score
Sub- thin polymer film 9 is contacted again with metal level 8, and due to the mutual constraint of positive and negative charge, the positive charge on grid 6 is branched back to
Metal level 8, the internal electric field in transistor internal vertical direction are decreased to 0, and the conducting channel width in channel layer 1 diminishes, electric current
IDSDiminish, returned to the state as shown in Fig. 2 (a).Therefore, external force F can regulate and control what floating gate charge was formed in transistor internal
Internal electric field size, plays a part of grid voltage, so as to be capable of achieving the regulation and control to size of current in quasiconductor.In Fig. 2 (a), electricity
Stream IDSIt is less, it is defined as the closed mode of transistor；In Fig. 2 (b), electric current IDSIt is larger, it is defined as the opening of transistor.
Fig. 3 is the structural representation of the friction electronics NAND gate according to a kind of exemplary embodiment of the invention.Such as Fig. 3 institutes
Show, the electronics NAND gate that rubs is by two relative floating boom formula friction electron-optical transistors and a pair traditional p-types and N-shaped field effect
Transistor is answered to constitute.Wherein, moveable part is supported by poly (methyl methacrylate) plate, is high molecular polymer thin film up and down.Movable part
Be divided to can upper and lower two floating boom formulas friction electron-optical transistor between vertically move, make high molecular polymer thin film respectively with up and down
Metal level is contacted or is separated.The source electrode of the drain electrode of lower end friction electron-optical transistor and p-type field-effect transistor connects supply voltage
Vbias=5V, the drain electrode of the source electrode and p-type field-effect transistor of the electron-optical transistor that rubs are connected, and meet outfan Vout, and with it is upper
The drain electrode connection of end friction electron-optical transistor.The source electrode connection N-shaped field-effect transistor of upper end friction electron-optical transistor
Drain electrode, the source ground of N-shaped field-effect transistor.P-type field-effect transistor is connected with the grid of N-shaped field-effect transistor conduct
Electric field input EA, by EAInput state " 1 " is defined as during equal to 5V, is defined as input state " 0 " equal to 0V.When can in diagram
The position of movable part is its original state, and the gate metal distance with lower transistor is d=D0=200 μm, now external force FBFor
Release conditions, are defined as input state " 0 "；When external force FBFor applying during state, moveable part is in external force FBAct on to moving down
Dynamic, the gate metal contact with lower transistor, distance are d=0, are defined as input state " 1 ".According to CMOS logic level mark
Standard, VoutWhen being output as low level, output state " 0 " is defined as；VoutWhen being output as high level, output state " 1 " is defined as.Rub
Wipe electronics NAND gate and establish outside stress-electric coupling input and contacting that logic level is exported.
Fig. 4 is the equivalent circuit diagram of the friction electronics NAND gate according to above-mentioned example embodiment, test result and fixed
Adopted symbol.As shown in Fig. 4 (a), the electronics NAND gate that rubs is equivalent to a pair of the franklinic electricities controlled by same friction generator
Son learns transistor, and two are made up of the field-effect transistor of a voltage-controlled p-type and N-shaped simultaneously.Work as EAAnd FBIt is combined as
When (0 0), external electrical field EA#2 transistors can be caused to open, #4 transistors are closed, the output voltage of friction nanometer power generator makes #
1 transistor is opened, and #3 transistors are closed, VoutOutput state is " 1 "；Work as EAAnd FBWhen being combined as (1 0), external electrical field EACan make
Obtain #2 transistors to close, #4 transistors are opened, the output voltage of friction nanometer power generator opens #1 transistors, and #3 transistors are closed
Close, VoutOutput state is " 1 "；Work as EAAnd FBWhen being combined as (0 1), external electrical field EA#2 transistors can be caused to open, #4 crystal
Pipe is closed, and the output voltage of friction nanometer power generator closes #1 transistors, and #3 transistors are opened, VoutOutput state is " 1 "；
Work as EAAnd FBWhen being combined as (1 1), external electrical field EA#2 transistors can be caused to close, #4 transistors are opened, friction nanometer power generator
Output voltage make #1 transistors close, #3 transistors open, VoutOutput state is " 0 "；Fig. 4 (b) gives friction electronics
The truth table of NAND gate level output correspondence external force F input, test result meet CMOS logic level standard.Fig. 4 (c) gives
The definition symbol of stress-electric coupling input friction electronics NAND gate.
Fig. 5 is a kind of equivalent circuit diagram and test knot of the friction electronics S-R triggers of exemplary embodiment of the invention
Really.As shown in Fig. 5 (a), friction electronics S-R triggers are by two friction electronics NAND gate 1# and 2# and traditional lock
Storage is constituted.Friction electronics NAND gate 1# and 2# connect external force input F jointlyCLK, the electrical input of 1# is S ends, and 2#'s is electric defeated
Enter two inputs that the outfan that end is R ends, 1# and 2# connects latch respectively.Fig. 5 (b) gives friction electronics S-R
Trigger level output correspondence ES、ERWith external force FCLKThe truth table of input, test result meets S-R triggers characteristic and CMOS is patrolled
Collect level standard.
Fig. 6 is a kind of equivalent circuit diagram of the friction electronics d type flip flop of exemplary embodiment of the invention and test result.
As shown in Fig. 6 (a), friction electronics d type flip flop is by two friction electronics NAND gate 1# and 2# and traditional latch
Composition.Friction electronics NAND gate 1# and 2# connect external force input F jointlyCLK, EDAs the NAND gate 1# electricity input of friction electronics
End, and by a non-electrical input behind the door as friction electronics NAND gate 2#, the outfan of 1# and 2# connects lock respectively
Two inputs of storage.Fig. 6 (b) gives friction electronics d type flip flop level output correspondence EDWith external force FCLKWhat is be input into is true
Value table, test result meet d type flip flop characteristic and CMOS logic level standard.
Fig. 7 is a kind of equivalent circuit diagram of friction three bit register of electronics of exemplary embodiment of the invention.Such as Fig. 7 institutes
Show, friction electronics depositor is made up of three friction electronics d type flip flops, and the power input of three d type flip flops connects jointly
External force is input into FCLK, electrical input is respectively ED0、ED1、ED2.When power input is " 1 ", rub three bit register of electronics
Outfan Q0、Q1、Q2, can be with store-memory electric input state now, when power input is become by " 1 " turns to " 0 ", even if electric
Input changes, and the information of store-memory keeps constant.
Fig. 8 is a kind of equivalent circuit diagram of the friction electronics T triggers of exemplary embodiment of the invention and test result.
As shown in Fig. 8 (a), friction electronics T triggers by a friction electronics NAND gate, a traditional not gate, and two traditional
S-R triggers are constituted.The power input termination external force triggering F of friction electronics T triggersCLK, electrical input connects high level " 1 ", defeated
Go out to terminate not gate input, the outfan of not gate is triggered as the clock of first S-R trigger, S-R triggers output two ends
The input of second S-R trigger is connect respectively, and S-R triggers input S ends are external electricity input ETWith second S-R trigger
Corresponding feedback output end, input R ends are that external electric power is input into ETWith the corresponding feedback output end of second S-R trigger.Fig. 8
B () gives friction electronics T triggers level output correspondence ETAnd FCLKThe truth table of input, test result meet T triggers
Characteristic and CMOS logic level standard.
Fig. 9 is a kind of equivalent circuit diagram and test knot of friction three digit counter of electronics of exemplary embodiment of the invention
Really.As shown in Fig. 9 (a), friction electronics depositor is by three friction electronics T triggers, two and door composition, three triggerings
Device connects external force triggering F jointlyCLK, the electrical input of first trigger is ET0=" 1 ", the outfan of first trigger are made
For the electrical input E of second triggerT1, the outfan of first and second triggers is used as the input of two ends and the input of door
Input E of the outfan of end, the input of two ends and door as the 3rd triggerT2, three ends of outfan connection of three triggers
With the input of door, outfan is enumerator and enters bit-identify C.Fig. 9 (b) gives the true of friction three digit counter of electronics
Value table, test result meet the characteristic of three digit counters.
In sum, the present invention combines friction electron-optical transistor and conventional field effect transistor, it is proposed that a kind of power electricity
The friction electronics NAND gate of coupling input, can carry out logical operationss to outside machinery triggering and electricity triggering, be converted into logic
Level is exported.Based on the friction electronics NAND gate, it is proposed that various friction electronics triggers and sequential logical circuit, show
The storage of outside machinery triggering and estimated performance, realize the direct interaction of external environment and si-substrate integrated circuit, man-machine
There is important application prospect in interface, micro-nano mechanical storage, intelligence instrument and Internet of Things.
Particular embodiments described above, has been carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail
Describe in detail bright, it should be understood that the foregoing is only the specific embodiment of the present invention, be not limited to the present invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (9)
1. a kind of floating boom formula rubs electron-optical transistor, it is characterised in that include：
Base material, the base material include：
Channel layer, its material are n-type silicon；
Insulating barrier, is formed on channel layer, and its material is silicon dioxide；
Substrate layer, is formed on insulating barrier, and its material is heavily doped n-type silicon；
Two metal electrodes, are deposited on two diverse locations under channel layer, draw floating boom formula friction electron-optical transistor
Drain electrode and source electrode；
Metal gates, are formed on the substrate layer；
Polymeric substrate, is formed on grid conducting layer；
Metal film, is formed on polymeric substrate, is connected with metal gates by via；
Mobile friction member, its material are high molecular polymer, and which can move under external force, with metal diaphragm contacts or point
From.
2. floating boom formula according to claim 1 rubs electron-optical transistor, it is characterised in that
When mobile friction member is with metal membrance separation, enhancement region is formed in channel layer, the conducting channel width in channel layer increases,
Electric current I in conducting channelDSIncrease, floating boom formula friction electron-optical transistor is defined as in opening；
When mobile friction member is with metal diaphragm contacts, the conducting channel width in channel layer reduces, the electric current I in conducting channelDS
Reduce, floating boom formula friction electron-optical transistor is defined as being closed.
3. a kind of friction electronics NAND gate, it is characterised in that including two floating boom formulas friction electronics as claimed in claim 1
Learn transistor, a p-type field-effect transistor and a N-shaped field-effect transistor；
Mobile friction member is supported by lucite, and upper and lower surface is macromolecule polymer material；Mobile friction member is in two floating booms
Move between formula friction electron-optical transistor so that the upper and lower surface of mobile friction member and two floating boom formulas friction electronics crystal
The metal diaphragm contacts of pipe or separation；
The drain electrode of underlying floating boom formula friction electron-optical transistor is connected power supply electricity with the source electrode of p-type field-effect transistor
Pressure, the source electrode of underlying floating boom formula friction electron-optical transistor are connected with the drain electrode of p-type field-effect transistor, connection output
End, and be connected with the drain electrode of floating boom formula friction electron-optical transistor above；
The source electrode of floating boom formula friction electron-optical transistor above connects the drain electrode of N-shaped field-effect transistor；
The source ground of N-shaped field-effect transistor；
P-type field-effect transistor is connected with the grid of N-shaped field-effect transistor, used as electric field input.
4. rub electronics NAND gate as claimed in claim 3, it is characterised in that
Supply voltage is 5V；
When electric field input terminal voltage is 5V, input state is defined as " 1 ", when electric field input terminal voltage is 0V, input state definition
For " 0 "；
When external force suffered by mobile friction member is release conditions, friction member and floating boom formula friction electronics crystal above is moved
The metal diaphragm contacts of pipe, input state are defined as " 0 ", and when external force suffered by mobile friction member is applying state, mobile friction member exists
Move down under external force effect, the metal diaphragm contacts of the electron-optical transistor that rubs with underlying floating boom formula, input state are fixed
Justice is " 1 "；
When the voltage of outfan is low level, output state is defined as " 0 ", when the voltage of outfan is high level, output state
For " 1 ".
5. a kind of friction electronics S-R triggers, it is characterised in that including two friction electronics as claimed in claim 3
NAND gate and a latch,
Two friction electronics NAND gate connect external force input jointly, and the electrical input of one of friction electronics NAND gate is
ES, the electrical input of another friction electronics NAND gate is ER, two friction electronics NAND gate outfan connect lock respectively
Two inputs of storage.
6. a kind of friction electronics d type flip flop, it is characterised in that including two friction electronics as claimed in claim 3 with
Not gate and a latch,
Two friction electronics NAND gate connect external force input jointly, and the electrical input of one of friction electronics NAND gate is
ED, EDBy a non-electrical input behind the door as another friction electronics NAND gate, two friction electronics NAND gate
Outfan connects two inputs of latch respectively.
7. a kind of friction three bit register of electronics, it is characterised in that including three friction electronics as claimed in claim 6
D type flip flop,
The power input of three friction electronics d type flip flops connects external force input jointly, and electrical input is respectively ED0、ED1、ED2,
The outfan of friction three bit register of electronics is Q0、Q1、Q2。
8. a kind of friction electronics T triggers, it is characterised in that including friction electronics as claimed in claim 3 with
Not gate, not gate, S-R triggers and the 2nd S-R triggers,
The power input connection external force triggering of friction electronics T triggers, electrical input connection high level, outfan connection not gate
Input, the outfan of not gate triggered as the clock of S-R triggers, the output two ends difference of S-R triggers
Connect the input of the 2nd S-R triggers, the input S ends of S-R triggers are external electricity input ETWith the 2nd S-R triggers
Corresponding feedback output end, the input R ends of S-R triggers are that external electric power is input into ETWith the correspondence of the 2nd S-R triggers
Feedback output end.
9. a kind of friction three digit counter of electronics, it is characterised in that including three friction electronics as claimed in claim 9
T triggers and a two ends input and door and a three ends input and door,
Three friction electronics T triggers connect external force triggering jointly, and the electrical input of first friction electronics T trigger is
ET0=" 1 ", the electrical input E of the outfan of first trigger as second friction electronics T triggerT1, first is rubbed
The outfan of electronics T triggers and second friction electronics T trigger is wiped as the input of two ends and the input of door, two ends
Input E of the outfan of input and door as the 3rd friction electronics T triggerT2, three friction electronics T triggers
Outfan connects the input of three ends and door, and what outfan was enumerator enters bit-identify C.
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| CN109425369A (en) * | 2017-08-28 | 2019-03-05 | 北京纳米能源与***研究所 | Rub electron-optical transistor and the power using it, magnetic field sensor |
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| US9484842B2 (en) * | 2013-03-01 | 2016-11-01 | Georgia Tech Research Corporation | Segmentally structured disk triboelectric nanogenerator |
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| US20160294305A1 (en) * | 2015-04-02 | 2016-10-06 | Research & Business Foundation Sungkyunkwan Univer Sity | Triboelectric energy harvester |
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| CN109425369A (en) * | 2017-08-28 | 2019-03-05 | 北京纳米能源与***研究所 | Rub electron-optical transistor and the power using it, magnetic field sensor |
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