CN106033779A - Tribotronics field-effect transistor and logic device having the same, and logic circuit - Google Patents

Tribotronics field-effect transistor and logic device having the same, and logic circuit Download PDF

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Publication number
CN106033779A
CN106033779A CN201510106205.2A CN201510106205A CN106033779A CN 106033779 A CN106033779 A CN 106033779A CN 201510106205 A CN201510106205 A CN 201510106205A CN 106033779 A CN106033779 A CN 106033779A
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transistor
logical device
friction
electronics
drain electrode
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CN106033779B (en
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张弛
王中林
张丽敏
唐伟
韩昌报
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Beijing Institute of Nanoenergy and Nanosystems
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Beijing Institute of Nanoenergy and Nanosystems
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H03K19/21—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical
    • H03K19/215—EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical using field-effect transistors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Logic Circuits (AREA)

Abstract

The invention provides a tribotronics field-effect transistor and a logic device having the same, and a logic circuit. The tribotronics field-effect transistor comprises a transistor basal body, a drain electrode, a source electrode, a floating gate electrode, and a mobile friction layer. The transistor basal body consists of a conductive substrate, an insulation layer, and a channel layer, wherein the two layers are formed on the conductive substrate successively; the drain electrode and the source electrode are formed at the two sides of the channel layer; the floating gate electrode formed at the other surface, opposite to the insulation layer, of the conductive substrate is in ohmic contact with the conductive substrate; and the mobile friction layer is opposite to the floating gate electrode. According to the invention, the mobile friction layer can be in contact with the floating gate electrode to carry out electrification by friction under the effect of an external force and triboelectric charges are generated at the floating gate electrode, thereby realizing dynamic interaction between the mobile friction layer and the floating gate electrode. Therefore, the external gate voltage in the traditional field-effect transistor can be replaced; an objective of regulating the carrier transport characteristic of the electronic device is achieved; and mechanical-electronic coupling is realized.

Description

Friction electronics field-effect transistor and apply its logical device and logic circuit
Technical field
The present invention relates to nanometer and technical field of integrated circuits, particularly relate to a kind of friction electronics field effect Answer transistor and apply its logical device and logic circuit.
Background technology
Logic circuit is transmission and the process of a kind of discrete signal, with binary system as principle, it is achieved numeral Signal logic computing and the circuit of operation.Logic circuit only divides high and low level, has interference resistance strong, The advantage that precision is high and confidentiality is good, is widely used in computer, digital control, communication, automatization With aspects such as instrument.Although logic circuit technology is the most ripe, but existing logical block device is all " static ", and trigger almost exclusively through the signal of telecommunication or start, lack external environment and logic " dynamically " interaction mechanism of device.
2014, Chinese Academy of Sciences's Beijing nanometer energy and grinding that system research institute king middle forest academician leads Study carefully group friction nanometer power generator (TENG) to be combined with conventional field effect transistor, develop The contact electrification field-effect transistor of external force touch-control.This device can make gate material connect under external force Touch electrification, form electrostatic potential as gate signal, it is achieved to the tune of carrier transport characteristic in quasiconductor Control.Contact electrification field-effect transistor as a kind of elemental device, can derive a series of can be real The man-machine interaction device of existing various functions, proposes friction electronics (Tribotronics) first This new research field.Friction electronics has coupled triboelectrification effect and characteristic of semiconductor, is to rub Wipe the whole new set of applications of nano generator；Meanwhile, as by machinery input regulation and control carrier transport another Plant new way, will with piezoelectron together, the development for human-computer interaction intelligent interface provides important Basis.Owing to friction nanometer power generator can produce more higher output voltage than piezoelectric nano electromotor, And with the coupling of quasiconductor effect so that it is brilliant that piezoelectron compared by contact electrification field-effect transistor Body pipe has broader external force sensing scope and more material selects, it is possible to be widely used in man-machine Alternately, the field such as sensor, minute mechanical and electrical system, nanometer robot and flexible electronic.
Summary of the invention
(1) to solve the technical problem that
In view of above-mentioned technical problem, the invention provides a kind of friction electronics field-effect transistor and answer With its logical device and logic circuit.
(2) technical scheme
According to an aspect of the invention, it is provided a kind of friction electronics field-effect transistor.This rubs Wipe electronics field-effect transistor to include: semiconductor body, drain electrode 4, source electrode 5, floating gate electrode 6 And move frictional layer 7.Semiconductor body includes: conductive substrates 3 and be sequentially formed in this conductive base Insulating barrier 2 at the end and channel layer 1.Drain electrode 4 and source electrode 5, be formed at the both sides of channel layer 1. Floating gate electrode 6, is formed on the another side that conductive substrates 3 is relative with insulating barrier 2, with conductive substrates 3 Ohmic contact.Mobile frictional layer 7, is oppositely arranged with floating gate electrode 6, and it can be under external force Motion, produces with floating gate electrode 6 and contacts friction or separate.Wherein, floating gate electrode 6 and mobile friction Layer 7 is prepared by being positioned at the material of diverse location in friction electrode sequence.
According to another aspect of the present invention, additionally providing a kind of friction electronics logical device, it is special Levy and be, including: mobile gripper shoe；And the transistor of floating gate electrode spaced opposite predeterminable range A and transistor B.This transistor A and transistor B is above-mentioned friction electronics field-effect transistor. The mobile frictional layer of transistor A and transistor B is fixed on the tow sides of mobile gripper shoe, and can Move along the direction being perpendicular to soi wafer under this moves the drive of gripper shoe, make transistor A and crystalline substance The mobile frictional layer of body pipe B contacts friction respectively or separates with corresponding floating gate electrode.
According to a further aspect of the invention, a kind of friction electronics logic inverter is additionally provided.This rubs Wipe electronics logic inverter to include: a logical device, this logical device is the franklinic electricity of claim 5 Son learns logical device, and transistor A and transistor B in this logical device are respectively the first transistor And transistor seconds；Wherein, the grounded drain of the first transistor, the source class of transistor seconds connects power supply Voltage Vbias, the source class of the first transistor is connected with the drain electrode of transistor seconds, meets outfan Vout。
According to a further aspect of the invention, a kind of friction electronics logical AND gate is additionally provided.This rubs Wipe electronics logical AND gate to include: the first logical device and the second logical device, this first logical device With the friction electronics logical device that the second logical device is claim 5, in this first logical device Transistor A and transistor B be respectively the first transistor #1 and transistor seconds #2, this second is patrolled Collect the transistor A in device and transistor B and be respectively third transistor #3 and the 4th transistor #4, Wherein: the drain electrode of the first transistor #1 is connected to supply voltage Vbias；The source class of the first transistor #1 It is connected with the drain electrode of third transistor #3；The drain of transistor seconds #2 and the 4th transistor #4 and the The source class of three transistor #3 is connected, and meets outfan Vout；Transistor seconds #2 and the 4th transistor #4 Source class ground connection；FAAnd FBIt is respectively acting on the first logical device and the second logical device.
According to a further aspect of the invention, a kind of friction electronics logic sum gate is additionally provided.This rubs Wipe electronics logic sum gate to include: the first logical device and the second logical device, this first logical device With the friction electronics logical device that the second logical device is claim 5, in this first logical device Transistor A and transistor B be respectively the first transistor #1 and transistor seconds #2, this second is patrolled Collect the transistor A in device and transistor B and be respectively third transistor #3 and the 4th transistor #4, Wherein: the drain electrode of the first transistor #1 and third transistor #3 is connected to supply voltage Vbias；First Transistor #1 is connected with the source class of third transistor #3 and the drain electrode of the 4th transistor #4, connects outfan Vout；The drain of transistor seconds #2 is connected with the source class of the 4th transistor #4；Transistor seconds #2 Source class ground connection；FAAnd FBIt is respectively acting on the first logical device and the second logical device.
According to a further aspect of the invention, a kind of friction electronics logical AND not gate is additionally provided.Should Friction electronics logical AND not gate includes: the first logical device and the second logical device, this first logic Device and the friction electronics logical device that the second logical device is claim 5, this first logic device Transistor A and transistor B in part are respectively the first transistor #1 and transistor seconds #2, and this is years old Transistor A and transistor B in two logical devices are respectively third transistor #3 and the 4th transistor #4, wherein: the drain electrode of the first transistor #1 is connected to the ground；The source class of the first transistor #1 and the 3rd The drain electrode of transistor #3 is connected；The drain of transistor seconds #2 and the 4th transistor #4 and the 3rd crystal The source class of pipe #3 is connected, and meets outfan Vout；Transistor seconds #2 and the source class of the 4th transistor #4 Meet supply voltage Vbias；FAAnd FBIt is respectively acting on the first logical device and the second logical device.
According to a further aspect of the invention, a kind of friction electronics logic nor gate is additionally provided.Should Friction electronics logic nor gate includes: the first logical device and the second logical device, this first logic Device and the friction electronics logical device that the second logical device is claim 5, this first logic device Transistor A and transistor B in part are respectively the first transistor #1 and transistor seconds #2, and this is years old Transistor A and transistor B in two logical devices are respectively third transistor #3 and the 4th transistor #4, wherein: the drain electrode of the first transistor #1 and third transistor #3 is connected to the ground；The first transistor #1 is connected with the source class of third transistor #3 and the drain electrode of the 4th transistor #4, meets outfan Vout； The drain of transistor seconds #2 is connected with the source class of the 4th transistor #4；The source class of transistor seconds #2 Meet supply voltage Vbias；FAAnd FBIt is respectively acting on two friction electronics logical devices.
According to a further aspect of the invention, a kind of friction electronics logic XOR gate is additionally provided.Should Friction electronics logic XOR gate includes: the first logical device, the second logical device and the 3rd logic device Part, transistor A and transistor B in this first logical device are respectively the first transistor #1 and Two-transistor #2, transistor A and transistor B in this second logical device are respectively the 3rd crystal Pipe #3 and the 4th transistor #4, transistor A and transistor B in the 3rd logical device are respectively 5th transistor #5 and the 6th transistor #6, wherein: the source class of transistor seconds #2 and the 3rd crystal The drain electrode of pipe #3 is connected to supply voltage Vbias；The drain electrode of the first transistor #1 and the 4th transistor #4 Source class ground connection；The source electrode of the first transistor #1, the drain electrode of transistor seconds #2 and the 5th transistor The drain electrode of #5 is connected；The source electrode of third transistor #3, the drain electrode of the 4th transistor #4 and the 6th crystal The source class of pipe #6 is connected；The source class of the 5th transistor #5 and the drain electrode of the 6th transistor #6 are connected, and connect Outfan Vout；FASimultaneously act on the first logical device and the second logical device, FBAct on the 3rd Logical device.
According to a further aspect of the invention, additionally provide a kind of friction electronics logic with or door.Should Friction electronics logic is same or door includes: the first logical device, the second logical device and the 3rd logic device Part, transistor A and transistor B in this first logical device are respectively the first transistor #1 and Two-transistor #2, transistor A and transistor B in this second logical device are respectively the 3rd crystal Pipe #3 and the 4th transistor #4, transistor A and transistor B in the 3rd logical device are respectively 5th transistor #5 and the 6th transistor #6, wherein: the source class of transistor seconds #2 and the 3rd crystal The drain electrode of pipe #3 is connected to the ground；The drain electrode of the first transistor #1 and the source class of the 4th transistor #4 connect electricity Source voltage Vbias；The source electrode of the first transistor #1, the drain electrode of transistor seconds #2 and the 5th transistor The drain electrode of #5 is connected；The source electrode of third transistor #3, the drain electrode of the 4th transistor #4 and the 6th crystal The source class of pipe #6 is connected；The source class of the 5th transistor #5 and the drain electrode of the 6th transistor #6 are connected, and connect Outfan Vout；FASimultaneously act on the first logical device and the second logical device, FBAct on the 3rd Logical device.
According to a further aspect of the invention, a kind of logic circuit is additionally provided.This logic circuit includes At least one logical device.This logical device is above-mentioned friction electronics logical device, friction electronics Logic inverter, friction electronics logical AND gate, friction electronics logic sum gate, friction electronics are patrolled Collect NAND gate, friction electronics logic nor gate, friction electronics logic XOR gate, or friction electronics Learn logic with or door.
(3) beneficial effect
From technique scheme it can be seen that the present invention rubs electronics field-effect transistor and apply it Logical device and logic circuit have the advantages that
(1) move frictional layer and can contact triboelectrification with floating gate electrode under external force, at floating boom Produce triboelectric charge on electrode, it is achieved " dynamic interaction " between the two, substitute tradition field effect brilliant External gate voltage in body pipe, it is achieved the purpose of carrier transport characteristic in regulation and control electronic device；
(2) based on silicon-based semiconductor devices, simple in construction, it is easy to make and with existing silicon-based technologies Integrated, it is easy to accomplish the miniaturization of device and array, there is good modulating properties；
(3) friction electronics logic gate device establishes outside machinery triggering and CMOS logic level The contact of signal, various friction electronics logic circuits can carry out what electromechanics (mechanical-electronic) coupled Logical operations, it is achieved that external environment is mutual with si-substrate integrated circuit；
(4) device can bear bigger mechanical deformation, compares piezoelectron transistor and has wider Mechanical trigger range and widely semi-conducting material select.
Accompanying drawing explanation
Fig. 1 is the structure according to first embodiment of the invention floating boom formula friction electronics field-effect transistor Schematic diagram；
Fig. 2 is the fundamental diagram of the friction electronics field-effect transistor of floating boom formula shown in Fig. 1；
Fig. 3 is the structural representation according to second embodiment of the invention friction electronics logical device；
Fig. 4 is the equivalent circuit diagram of friction electronics logical device shown in Fig. 3；
Fig. 5 is the equivalent circuit diagram according to third embodiment of the invention friction electronics logic inverter；
Fig. 6 is the equivalent circuit diagram according to fourth embodiment of the invention friction electronics logical AND gate；
Fig. 7 is the equivalent circuit diagram according to fifth embodiment of the invention friction electronics logic sum gate；
Fig. 8 is the equivalent circuit diagram according to sixth embodiment of the invention friction electronics logical AND not gate；
Fig. 9 is the equivalent circuit diagram according to seventh embodiment of the invention friction electronics logic nor gate；
Figure 10 is the equivalent circuit diagram according to eighth embodiment of the invention friction electronics logic XOR gate；
Figure 11 is same according to ninth embodiment of the invention friction electronics logic or the equivalent circuit diagram of door.
[main element symbol description]
1-channel layer；2-silicon dioxide insulating layer；
3-SOI substrate layer；4-the first metal electrode (drain electrode)；
5-the second metal electrode (source electrode)；6-the 3rd metal electrode (floating gate electrode)；
7-moves frictional layer；#1-the first transistor；
#2-transistor seconds；#3-third transistor；
#4-the 4th transistor；#5-the 5th transistor；
#6-the 6th transistor.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with concrete real Execute example, and referring to the drawings, the present invention is described in more detail.It should be noted that at accompanying drawing or During description describes, similar or identical part all uses identical figure number.Accompanying drawing does not illustrates or retouches The implementation stated, for form known to a person of ordinary skill in the art in art.Although it addition, The demonstration of the parameter comprising particular value can be provided herein, it is to be understood that parameter is equal to accordingly without definite Value, but can be similar to be worth accordingly in acceptable error margin or design constraint.Embodiment In the direction term mentioned, such as " on ", D score, "front", "rear", "left", "right" etc., only It it is the direction with reference to accompanying drawing.Therefore, the direction term of use is used to illustrate not for limiting this Bright protection domain.
During realizing the present invention, applicant finds first: friction electronics device can be with existing Having si-substrate integrated circuit to combine, the friction electronics being therefore particularly suitable for making man-machine interaction silica-based is patrolled Collect circuit.Based on this, the invention provides a kind of floating boom formula friction electron-optical transistor and apply it Logic gates and logic circuit, and show electromechanics (mechanical-electronic) the logic behaviour triggered based on contact Make, to realize the logical operations that integrated mechanical-electric coupling controls.
One, first embodiment
In one embodiment of the invention, it is provided that a kind of floating boom formula friction electronics field effect transistor Pipe.Fig. 1 is the structure according to first embodiment of the invention floating boom formula friction electronics field-effect transistor Schematic diagram.As it is shown in figure 1, this floating boom formula friction electronics field-effect transistor uses inverted SOI Silicon chip.In soi wafer, substrate layer 3 heavy doping (P+-Si), there is the lowest resistivity；Upper strata Silicon is P-type silicon (P-Si), as channel layer 1；It is silicon dioxide between substrate layer 3 and channel layer 1 Insulating barrier (SiO2)2.Wherein, substrate layer 3 is p-type or N-type heavy doping, after heavy doping Resistivity is less than 0.01 Ω cm.
The first metal electrode (Al) 4 and second is deposited respectively in the left and right sides of channel layer 1 lower surface Metal electrode (Al) 5, respectively as drain electrode and the source electrode of field-effect transistor, external power supply VDS The two poles of the earth.The upper surface of substrate layer 3 is coated with the 3rd metal electrode (Al) 6 of one layer of Ohmic contact, Floating gate electrode as field-effect transistor.This floating gate electrode 6 does not has wire to be connected with the external world, is floating Grid structure.It is especially noted that this floating boom formula friction electronics field-effect transistor also includes one Mobile frictional layer 7.This moves frictional layer is high molecular polymer (PTFE) thin film, can masterpiece outside With lower vertical movement (i.e. moving along the direction vertical with soi wafer), produce with floating gate electrode 6 and connect Touch wiping or separate.Wherein, floating gate electrode 6 and mobile frictional layer 7 are by being positioned in friction electrode sequence not Prepared by the material of co-located.
Fig. 2 is the fundamental diagram of the friction electron-optical transistor of floating boom formula shown in Fig. 1.As in Fig. 2 (a) Shown in, under the effect of external force F, high molecular polymer thin film 7 contacts generation friction with floating gate electrode 6, Due to different electronics constraint abilities, high molecular polymer thin film 7 is electronegative, and floating gate electrode 6 band is just Electricity.Now due to the mutual constraint of positive and negative charge, the positive charge on floating gate electrode 6 will not be at transistor Middle generation internal electric field.As shown in (b) in Fig. 2, when external force F removes, floating gate electrode 6 is with high Molecularly Imprinted Polymer thin film 7 separates, and under the effect of floating gate electrode 6 positive charge, transistor internal will be Producing internal electric field in vertical direction, direction of an electric field is pointed to channel layer 1, channel layer 1 by floating gate electrode 6 Charge polarization is produced so that channel layer 1 upper surface attracts electronics, repels hole under internal electric field effect, Produce depletion layer, reduce the conducting channel width in channel layer 1, thus reduce in channel layer 1 Electric current IDSSize, serve the regulation and control effect that transports of semiconductor carriers.When external force F is made again Used time, high molecular polymer thin film 7 contacts again with floating gate electrode 6, mutual due to positive and negative charge Constraint, the internal electric field in transistor internal vertical direction is decreased to 0, the conducting channel in channel layer 1 Width becomes big, electric current IDSBecome big, returned to the state as shown in (a) in Fig. 2.Therefore, external force F can regulate and control the internal electric field size that floating gate charge is formed at transistor internal, plays the work of grid voltage With, thus can realize the regulation and control of size of current in quasiconductor.In Fig. 2 in (a), electric current IDSRelatively Greatly, the opening of transistor it is defined as；In Fig. 2 in (b), electric current IDSLess, it is defined as crystalline substance The closed mode of body pipe.Wherein, IDSRepresent the electric current between source and drain (Drain-Source).Further, Opening and the closed mode of this floating boom formula friction electron-optical transistor can define separately.
In the present embodiment, first metal electrode the 4, second metal electrode 5 and the 3rd metal electrode 6 are equal Prepared by Al material.Above-mentioned electrode can also be prepared by other metal or nonmetallic materials, such as: Pt, Au, Ag or ITO (tin indium oxide).
It should be strongly noted that the 3rd metal electrode 6 is prepared by Al material in the present embodiment, move Dynamic friction layer 7 is prepared by macromolecule polymer material, but the present invention is not limited thereto.In the present invention, As long as the 3rd metal electrode 6 and mobile frictional layer 7 are to be in the material of diverse location in friction electrode sequence Preparing, both can contact friction and separate.
Here " friction electrode sequence ", refers to be carried out the attraction degree of electric charge according to material Sequence, bi-material in the moment contacted with each other, on the contact surface positive charge from friction electrode sequence pole Property the material surface relatively born be transferred to rub the material surface of polarity calibration in electrode sequence.Up to now, Also there is no the mechanism that the explanation electric charge that a kind of unified theory can be complete shifts, it is considered that, this Electric charge transfer is relevant with the surface work function of material, by electronics or ion transfer on the contact surface And realize electric charge transfer.Needs further illustrate and are, the transfer of electric charge is not required between bi-material Relative friction, simply by the presence of contacting with each other.Wherein, above-mentioned " contact electric charge ", refer to The two kinds of friction materials that there are differences of electrode sequence polarity contact friction and after separating its surface institute with Electric charge, it is considered that, this electric charge is only distributed in the surface of material, and distribution depth capacity is only about 10nm.It should be noted that the symbol of contact electric charge is the symbol of net charge, i.e. with just connecing Some areas of the material surface of electric shock lotus there may be the aggregation zone of negative charge, but whole surface is clean The symbol of electric charge is just.
Enumerate some insulant that can be used for preparing mobile frictional layer 7 and according to friction electrode sequence herein By positive polarity to negative polarity sort: aniline-formaldehyde resin, polyformaldehyde, ethyl cellulose, polyamide 11, Polyamide 6-6, Pilus Caprae seu Ovis and fabric thereof, silkworm silk and fabric thereof, paper, Polyethylene Glycol succinate, Cellulose, cellulose acetate, polyethyleneglycol adipate, polydiallyl phthalate, again Raw cellulose sponge, cotton and fabric, polyurethane elastomer, SAN, benzene second Alkene-butadiene copolymer, wood, hard rubber, acetate, staple fibre, polymethyl methacrylate, Polyvinyl alcohol, polyester (terylene), polyisobutylene, elastic polyurethane sponge, poly terephthalic acid second Diol ester, polyvinyl butyral resin, hycar, neoprene, natural rubber, Polyacrylonitrile, poly-(vinylidene chloride-co-acrylonitrile), poly bisphenol carbonic ester, CPPG, poly-inclined two Vinyl chloride, poly-(2,6-dimethyl polyphenylene oxide), polystyrene, polyethylene, polypropylene, Poly-diphenyl propane carbonic ester, polyethylene terephthalate, polyimides, polrvinyl chloride, poly- Dimethyl siloxane, polytrifluorochloroethylene, politef, Parylene, including Parylene C, group Rayleigh N, Parylene D, Parylene HT and Parylene AF4.
Relative to insulator, conductive material is respectively provided with the triboelectric characteristics easily losing electronics, in friction The list of electrode sequence is frequently located at end.Include for preparing the conventional conductive material of floating gate electrode 6 Metal, conductive oxide or conducting polymer composite.Wherein metal include gold, silver, platinum, aluminum, nickel, Copper, titanium, chromium or selenium, and the alloy formed by above-mentioned metal.Conductive oxide conventional such as AZO (Al-Doped ZnO), ITO (indium tin oxide) etc..
Two, the second embodiment
In a second embodiment of the present invention, it is provided that a kind of friction electronics logical device.Fig. 3 For the structural representation according to second embodiment of the invention friction electronics logical device.As it is shown on figure 3, Friction electronics logical device is by two relative Transistor-Transistor A (upper transistor) and transistor B (lower transistor), and one move gripper shoe composition.
Mobile gripper shoe is poly (methyl methacrylate) plate (Glass), transistor A and the polyphosphazene polymer of transistor B Compound thin film is fixed on the tow sides of this poly (methyl methacrylate) plate.Mobile gripper shoe can be at transistor A and crystalline substance Vertically move between body pipe B, make the mobile frictional layer of transistor A and transistor B respectively with accordingly Floating gate electrode contact friction or separate.
Wherein, the drain electrode of transistor B meets supply voltage Vbias, the drain electrode phase of source electrode and transistor A Even, outfan V is metout, the source ground of transistor A.
In shown in Fig. 3, the position of mobile gripper shoe is its initial position, with the floating gate electrode of transistor B Distance is d, and now external force F is release conditions, is defined as input state " 0 "；When external force F is for executing When adding state, mobile gripper shoe moves down in the effect of external force F, connects with the floating gate electrode of transistor B Touching, distance is 0, is defined as input state " 1 ".According to floating boom formula friction electronics field effect transistor The operation principle of pipe, when external force F is " 0 ", transistor A opens, and transistor B closes, this Time VoutFor low level output, it is defined as output state " 0 "；When external force F is " 1 ", crystal Pipe A closes, and transistor B opens, now VoutFor high level output, it is defined as output state " 1 ". Therefore, friction electronics logical device establishes external mechanical force input and contacting that logic level exports. Wherein, when transistor A and transistor B one of them mobile frictional layer and corresponding floating gate electrode During contact, wherein distance d of another mobile frictional layer and corresponding floating gate electrode is between 1mm extremely Between 10mm.
Fig. 4 is the equivalent circuit diagram of friction electronics logical device shown in Fig. 3.As shown in Figure 4, originally Embodiment friction electronics logical device (CGL) is equivalent to a friction with the output of two-way voltage Nano generator (TENG), and two field-effect transistors (#1, #2).This friction nanometer generating Two outfans of machine are respectively connecting to the floating gate electrode of two field-effect transistors, when external force F is " 0 " Time, the two output voltage of friction nanometer power generator makes transistor A close, and transistor B opens； When external force F is " 1 ", the two output voltage of friction nanometer power generator makes transistor A (#1) Opening, transistor B (#2) closes.
Work as Vbias=5V, D0During=1.2mm, corresponding external force F of friction electronics logical device level output As shown in Table 1, test result meets CMOS logic level standard to the truth table of input.Wherein, D0Transformation range for distance d.
Table one rubs the truth table of electronics logical device
Three, the 3rd embodiment
In the 3rd embodiment of the present invention, it is provided that a kind of friction electronics based on the second embodiment Learn the friction electronics logic inverter of logical device.Fig. 5 is according to third embodiment of the invention franklinic electricity Son learns the equivalent circuit diagram of logic inverter.
Refer to Fig. 5, this friction electronics logic inverter includes a logical device (CGL).This logic Device (CGL) is the logical device of the second embodiment, and simply its circuit connecting relation is adjusted. For convenience, the transistor A in this logical device and transistor B is respectively designated as first Transistor and transistor seconds.
Continue referring to Fig. 5, in the present embodiment, by the power input of the logical device shown in Fig. 4 Exchange with earth terminal, will the grounded drain of the first transistor, the source class of transistor seconds connects power supply electricity Pressure Vbias, the source class of the first transistor is connected with the drain electrode of transistor seconds, meets outfan Vout, i.e. For friction electronics logic inverter.
Work as Vbias=5V, D0During=1.2mm, corresponding external force F of friction electronics logic inverter level output As shown in Table 2, test result meets logic inverter characteristic and CMOS logic level to the truth table of input Standard.
Table two rubs the truth table of electronics logic inverter
Four, the 4th embodiment
In the 4th embodiment of the present invention, it is provided that a kind of logical device based on the second embodiment Friction electronics logical AND gate.Fig. 6 is according to fourth embodiment of the invention friction electronics logical AND The equivalent circuit diagram of door.
Refer to Fig. 6, this friction electronics logical AND gate includes: the first logical device (CGL1) and Second logical device (CGL2).This first logical device (CGL1) and the second logical device (CGL2) It is the logical device of the second embodiment.For convenience, by the first logical device (CGL1) In transistor A and transistor B be respectively designated as the first transistor (#1) and transistor seconds (#2), Transistor A in second logical device (CGL2) and transistor B is respectively designated as the 3rd crystal Pipe (#3) and the 4th transistor (#4).
Continuing referring to Fig. 6, the circuit connecting relation of the present embodiment friction electronics logical AND gate is as follows:
(1) drain electrode of the first transistor (#1) is connected to supply voltage Vbias；
(2) source class of the first transistor (#1) is connected with the drain electrode of third transistor (#3)；
(3) drain of transistor seconds (#2) and the 4th transistor (#4) and third transistor (#3) Source class be connected, meet outfan Vout；
(4) transistor seconds (#2) and the source class ground connection of the 4th transistor (#4)；
FAAnd FBIt is respectively acting on two logical devices (CGL1 and CGL2).
Work as Vbias=5V, D0During=1.2mm, the corresponding external force of friction electronics logical AND gate level output FAAnd FBAs shown in Table 3, test result meets logical AND gate characteristic and CMOS to the truth table of input Logic level standard.
Table three rubs the truth table of electronics logical AND gate
Five, the 5th embodiment
In the 5th embodiment of the present invention, it is provided that a kind of logical device based on the second embodiment Friction electronics logic sum gate.Fig. 7 be according to fifth embodiment of the invention friction electronics logic or The equivalent circuit diagram of door.
As it is shown in fig. 7, this friction electronics logic sum gate includes: the first logical device (CGL1) With the second logical device (CGL2).This first logical device (CGL1) and the second logical device (CGL2) It is the logical device shown in Fig. 4.For convenience, by the first logical device (CGL1) Transistor A and transistor B be respectively designated as the first transistor (#1) and transistor seconds (#2), Transistor A in second logical device (CGL2) and transistor B is respectively designated as the 3rd crystal Pipe (#3) and the 4th transistor (#4).
Refer to Fig. 7, the circuit connecting relation of the present embodiment friction electronics logic sum gate is as follows:
(1) drain electrode of the first transistor (#1) and third transistor (#3) is connected to supply voltage Vbias；
(2) the first transistor (#1) and the source class of third transistor (#3) and the 4th transistor (#4) Drain electrode be connected, meet outfan Vout；
(3) drain of transistor seconds (#2) is connected with the source class of the 4th transistor (#4)；
(4) the source class ground connection of transistor seconds (#2)；
FAAnd FBIt is respectively acting on two logical devices (CGL1 and CGL2).
Work as Vbias=5V, D0During=1.2mm, the corresponding external force of friction electronics logic sum gate level output FAAnd FBAs shown in Table 4, test result meets logic sum gate characteristic and CMOS to the truth table of input Logic level standard.
Table four rubs the truth table of electronics logic sum gate
Six, sixth embodiment
In the 6th embodiment of the present invention, it is provided that a kind of logical device based on the second embodiment Friction electronics logical AND not gate.Power supply input by the friction electronics logical AND gate shown in Fig. 6 End is exchanged with earth terminal, is the friction electronics logical AND not gate of the present embodiment.
Fig. 8 is the equivalent circuit diagram according to sixth embodiment of the invention friction electronics logical AND not gate. Refer to Fig. 8, the present embodiment friction electronics logical AND not gate includes: the first logical device (CGL1) With the second logical device (CGL2).This first logical device (CGL1) and the second logical device (CGL2) It is the logical device shown in Fig. 4.For convenience, by the first logical device (CGL1) Transistor A and transistor B be respectively designated as the first transistor (#1) and transistor seconds (#2), Transistor A in second logical device (CGL2) and transistor B is respectively designated as the 3rd crystal Pipe (#3) and the 4th transistor (#4).
Continuing referring to Fig. 8, the circuit connecting relation of the present embodiment friction electronics logical AND not gate is such as Under:
(1) drain electrode of the first transistor (#1) is connected to the ground；
(2) source class of the first transistor (#1) is connected with the drain electrode of third transistor (#3)；
(3) drain of transistor seconds (#2) and the 4th transistor (#4) and third transistor (#3) Source class be connected, meet outfan Vout；
(4) source class of transistor seconds (#2) and the 4th transistor (#4) meets supply voltage Vbias；
FAAnd FBIt is respectively acting on two logical devices (CGL1 and CGL2).
Work as Vbias=5V, D0During=1.2mm, outside friction electronics logical AND non-gate level output correspondence Power FAAnd FBInput truth table as shown in Table 5, test result meet logical AND not gate characteristic and CMOS logic level standard.
Table five rubs the truth table of electronics logical AND not gate
Seven, the 7th embodiment
In the 7th embodiment of the present invention, it is provided that a kind of logical device based on the second embodiment Friction electronics logic nor gate.Power input by the electronics logic sum gate that rubs shown in Fig. 7 Exchange with earth terminal, be the friction electronics logic nor gate of the present embodiment.
Fig. 9 is the equivalent circuit diagram according to seventh embodiment of the invention friction electronics logic nor gate. Refer to Fig. 9, the present embodiment friction electronics logic nor gate includes: the first logical device (CGL1) With the second logical device (CGL2).This first logical device (CGL1) and the second logical device (CGL2) It is the logical device shown in Fig. 4.For convenience, by the first logical device (CGL1) Transistor A and transistor B be respectively designated as the first transistor (#1) and transistor seconds (#2), Transistor A in second logical device (CGL2) and transistor B is respectively designated as the 3rd crystal Pipe (#3) and the 4th transistor (#4).
Continuing referring to Fig. 9, the circuit connecting relation of the present embodiment friction electronics logic nor gate is such as Under:
(1) drain electrode of the first transistor (#1) and third transistor (#3) is connected to the ground；
(2) the first transistor (#1) and the source class of third transistor (#3) and the 4th transistor (#4) Drain electrode be connected, meet outfan Vout；
(3) drain of transistor seconds (#2) is connected with the source class of the 4th transistor (#4)；
(4) source class of transistor seconds (#2) meets supply voltage Vbias；
FAAnd FBIt is respectively acting on the first logical device (CGL1) and the second logical device (CGL2).
Work as Vbias=5V, D0During=1.2mm, outside friction electronics logic nor gate level output correspondence Power FAAnd FBInput truth table as shown in Table 6, test result meet logic nor gate characteristic and CMOS logic level standard.
Table six rubs the truth table of electronics logic nor gate
Eight, the 8th embodiment
In the 8th embodiment of the present invention, it is provided that a kind of logical device based on the second embodiment Friction electronics logic XOR gate.Figure 10 is for patrolling according to eighth embodiment of the invention friction electronics Collect the equivalent circuit diagram of XOR gate.
Refer to Figure 10, the present embodiment friction electronics logic XOR gate includes: the first logical device, (CGL1) the second logical device (CGL2) and the 3rd logical device (CGL3).Wherein, this One logical device (CGL1), the second logical device (CGL2) and the 3rd logical device (CGL3) It is logical device as shown in Figure 4.For convenience, by the first logical device (CGL1) In transistor A and transistor B be respectively designated as the first transistor (#1) and transistor seconds (#2), Transistor A in second logical device (CGL2) and transistor B is respectively designated as the 3rd crystal Pipe (#3) and the 4th transistor (#4), by the transistor A in the 3rd logical device (CGL3) with Transistor B is respectively designated as the 5th transistor (#5) and the 6th transistor (#6).
Continuing referring to Figure 10, the circuit connecting relation of the present embodiment friction electronics logic XOR gate is such as Under:
(1) source class of transistor seconds (#2) and the drain electrode of third transistor (#3) are connected to electricity Source voltage Vbias；
(2) drain electrode of the first transistor (#1) and the source class ground connection of the 4th transistor (#4)；
(3) source electrode of the first transistor (#1), the drain electrode of transistor seconds (#2) and the 5th are brilliant The drain electrode of body pipe (#5) is connected；
(4) source electrode of third transistor (#3), the drain electrode of the 4th transistor (#4) and the 6th are brilliant The source class of body pipe (#6) is connected；
The source class of (5) the 5th transistors (#5) and the drain electrode of the 6th transistor (#6) are connected, and connect Outfan Vout。
FASimultaneously act on the first logical device (CGL1) and the second logical device (CGL2), FB Act on the 3rd logical device (CGL3).
Work as Vbias=5V, D0During=1.2mm, outside friction electronics logic XOR gate level output correspondence Power FAAnd FBInput truth table as shown in Table 7, test result meet logic XOR gate characteristic and CMOS logic level standard.
Table seven rubs the truth table of electronics logic XOR gate
Nine, the 9th embodiment
In the 9th embodiment of the present invention, it is provided that a kind of logical device based on the second embodiment Friction electronics logic with or door.Power supply by the friction electronics logic XOR gate shown in Figure 10 Input is exchanged with earth terminal, be the friction electronics logic of the present embodiment with or door.
Figure 11 is same according to ninth embodiment of the invention friction electronics logic or the equivalent circuit diagram of door. Refer to Figure 11, the present embodiment friction electronics logic is same or door includes: the first logical device (CGL1), Second logical device (CGL2) and the 3rd logical device (CGL3).Wherein, this first logic device Part (CGL1), the second logical device (CGL2) and the 3rd logical device (CGL3) are such as figure Logical device shown in 4.For convenience, by the transistor in the first logical device (CGL1) A and transistor B is respectively designated as the first transistor (#1) and transistor seconds (#2), by second Transistor A and transistor B in logical device (CGL2) are respectively designated as third transistor (#3) With the 4th transistor (#4), by the transistor A in the 3rd logical device (CGL3) and transistor B It is respectively designated as the 5th transistor (#5) and the 6th transistor (#6).
Continue referring to Figure 11, the present embodiment friction electronics logic with or door circuit connecting relation such as Under:
(1) source class of transistor seconds (#2) and the drain electrode of third transistor (#3) are connected to the ground；
(2) drain electrode of the first transistor (#1) and the source class of the 4th transistor (#4) connect power supply electricity Pressure Vbias；
(3) source electrode of the first transistor (#1), the drain electrode of transistor seconds (#2) and the 5th are brilliant The drain electrode of body pipe (#5) is connected；
(4) source electrode of third transistor (#3), the drain electrode of the 4th transistor (#4) and the 6th are brilliant The source class of body pipe (#6) is connected；
The source class of (5) the 5th transistors (#5) and the drain electrode of the 6th transistor (#6) are connected, and connect Outfan Vout。
FASimultaneously act on the first logical device (CGL1) and the second logical device (CGL2), FB Act on the 3rd logical device (CGL3).
Work as Vbias=5V, D0During=1.2mm, friction electronics logic is same or gate level exports outside correspondence Power FAAnd FBInput truth table as shown in Table 8, test result meet logic with or door characteristic and CMOS logic level standard.
Table eight rub electronics logic with or the truth table of door
Ten, the tenth embodiment
In the tenth embodiment of the present invention, it is provided that one is patrolled based on above-mentioned 3rd～nine embodiments Collect the logic circuit of device.This logic circuit is including at least patrolling in the above-described embodiment of one or more Collect device.
So far, already in connection with accompanying drawing, ten embodiments of the present invention have been described in detail.More than Yi Ju Describing, the present invention should be rubbed electronics field-effect transistor and apply it by those skilled in the art Logical device and logic circuit have had and have clearly recognized.
Additionally, the above-mentioned definition to each element and method is not limited in the various tools mentioned in embodiment Body structure, shape or mode, it can be changed or replace by those of ordinary skill in the art simply, Such as:
(1) the 3rd metal electrode 6 can also is that macromolecule polymer material, and mobile frictional layer 7 is also Can be metal material, channel layer 1 can also is that N-type silicon；
(2) in addition to soi wafer, the matrix of field-effect transistor can also be with other form generations Replace, such as: substrate layer 3 can replace with flexible conductive material, and silicon dioxide insulating layer 2 can To replace with organic insulation, channel layer 1 can replace with organic semiconducting materials.
In sum, friction nanometer power generator is combined by the present invention with silicon-based field-effect transistors, carries Go out a kind of logical device and logic circuit rubbing electronics field-effect transistor and applying it, it is possible to Outside machinery is triggered and is converted into the output of CMOS logic level signal.And propose each on this basis Plant combinational logic circuit, illustrate the friction electronics logical operations of mechanical-electric coupling, it is achieved that extraneous ring Border is mutual with si-substrate integrated circuit, at man-machine interaction, minute mechanical and electrical system, intelligent robot and thing Networking has important application prospect.
Particular embodiments described above, is carried out the purpose of the present invention, technical scheme and beneficial effect Further describe, be it should be understood that the foregoing is only the present invention specific embodiment and , be not limited to the present invention, all within the spirit and principles in the present invention, that is done any repaiies Change, equivalent, improvement etc., should be included within the scope of the present invention.

Claims (15)

1. a friction electronics field-effect transistor, it is characterised in that including:
Semiconductor body, comprising: conductive substrates (3) and being sequentially formed in this conductive substrates Insulating barrier (2) and channel layer (1)；
Drain electrode (4) and source electrode (5), be formed at the both sides of described channel layer (1)；
Floating gate electrode (6), is formed at described conductive substrates (3) relative with described insulating barrier (2) On another side, with described conductive substrates (3) Ohmic contact；And
Mobile frictional layer (7), is oppositely arranged with described floating gate electrode (6), and it can be at External Force Acting Lower motion, produces with described floating gate electrode (6) and contacts friction or separate；
Wherein, described floating gate electrode (6) and described mobile frictional layer (7) are by being positioned at friction electrode sequence Prepared by the material of upper diverse location.
Friction electronics field-effect transistor the most according to claim 1, it is characterised in that:
When described mobile frictional layer (7) contacts friction with described floating gate electrode (6), and described movement rubs Wiping layer is electronegative, described floating gate electrode positively charged, for the of described friction electronics field-effect transistor One state；
When described mobile frictional layer (7) separates with described floating gate electrode (6), at described friction electronics Learning field-effect transistor internal generation internal electric field, channel layer is pointed to by floating gate electrode in its direction, for described Second state of friction electronics field-effect transistor；
Wherein, described first state be opening and closed mode one of them, described second state For opening and closed mode wherein another.
Friction electronics field-effect transistor the most according to claim 1 and 2, its feature exists In, described semiconductor body is soi wafer, and described conductive substrates (3) is by described soi wafer Substrate layer obtains through heavy doping, and described insulating barrier (2) is the silicon dioxide insulator of described soi wafer Layer, described channel layer (1) is the upper layer of silicon of described soi wafer.
Friction electronics field-effect transistor the most according to any one of claim 1 to 3, It is characterized in that, described drain electrode (4), source electrode (5) and floating gate electrode (6) are by metal material or non- Prepared by conductive metal material；Described mobile frictional layer contact with floating gate electrode (6) friction part by Prepared by macromolecule polymer material.
5. a friction electronics logical device, it is characterised in that including: mobile gripper shoe；With And the transistor A and transistor B of floating gate electrode spaced opposite predeterminable range；
This transistor A and transistor B is the friction electronics according to any one of Claims 1-4 Learn field-effect transistor；
The mobile frictional layer of described transistor A and transistor B is just being fixed on described mobile gripper shoe Anti-two sides, and can move along the direction being perpendicular to described soi wafer under this moves the drive of gripper shoe, Make the mobile frictional layer of transistor A and transistor B contact with corresponding floating gate electrode respectively friction or Separate.
Friction electronics logical device the most according to claim 5, it is characterised in that: described The source ground of transistor A；The drain electrode of described transistor B meets supply voltage Vbias, source electrode is with brilliant The drain electrode of body pipe A is connected, and meets outfan Vout。
Friction electronics logical device the most according to claim 5, it is characterised in that:
Described mobile gripper shoe is near described transistor A, the mobile frictional layer of transistor A and floating boom electricity Pole contacts, and transistor A opens, and transistor B closes, outfan VoutFor low level, described friction Electronics logical device is output state " 0 "；
Under external force, mobile gripper shoe is moved towards transistor B, the mobile friction of transistor B Layer contacts with floating gate electrode, and transistor B opens, and transistor A closes, outfan VoutFor high level Described, friction electronics logical device is output state " 1 ".
8. a friction electronics logic inverter, it is characterised in that including: a logical device, should Logical device is the friction electronics logical device described in claim 5, the crystal in this logical device Pipe A and transistor B is respectively the first transistor and transistor seconds；
Wherein, the grounded drain of the first transistor, the source class of transistor seconds meets supply voltage Vbias, The source class of the first transistor is connected with the drain electrode of transistor seconds, meets outfan Vout。
9. one kind friction electronics logical AND gate, it is characterised in that including: the first logical device and Second logical device, this first logical device and the second logical device are the friction described in claim 5 Electronics logical device, transistor A and transistor B in this first logical device are respectively first Transistor (#1) and transistor seconds (#2), the transistor A in this second logical device and crystal Pipe B is respectively third transistor (#3) and the 4th transistor (#4), wherein:
The drain electrode of the first transistor (#1) is connected to supply voltage Vbias；
The source class of the first transistor (#1) is connected with the drain electrode of third transistor (#3)；
The drain of transistor seconds (#2) and the 4th transistor (#4) and third transistor (#3) Source class is connected, and meets outfan Vout；
Transistor seconds (#2) and the source class ground connection of the 4th transistor (#4)；
FAAnd FBIt is respectively acting on the first logical device and the second logical device.
10. one kind friction electronics logic sum gate, it is characterised in that including: the first logical device and Second logical device, this first logical device and the second logical device are the friction described in claim 5 Electronics logical device, transistor A and transistor B in this first logical device are respectively first Transistor (#1) and transistor seconds (#2), the transistor A in this second logical device and crystal Pipe B is respectively third transistor (#3) and the 4th transistor (#4), wherein:
The drain electrode of the first transistor (#1) and third transistor (#3) is connected to supply voltage Vbias；
The first transistor (#1) and the source class of third transistor (#3) and the 4th transistor (#4) Drain electrode is connected, and meets outfan Vout；
The drain of transistor seconds (#2) is connected with the source class of the 4th transistor (#4)；
The source class ground connection of transistor seconds (#2)；
FAAnd FBIt is respectively acting on the first logical device and the second logical device.
11. 1 kinds of friction electronics logical AND not gates, it is characterised in that including: the first logical device With the second logical device, this first logical device and the second logical device are rubbing described in claim 5 Wipe electronics logical device, transistor A in this first logical device and transistor B and be respectively the One transistor (#1) and transistor seconds (#2), the transistor A in this second logical device and crystalline substance Body pipe B is respectively third transistor (#3) and the 4th transistor (#4), wherein:
The drain electrode of the first transistor (#1) is connected to the ground；
The source class of the first transistor (#1) is connected with the drain electrode of third transistor (#3)；
The drain of transistor seconds (#2) and the 4th transistor (#4) and third transistor (#3) Source class is connected, and meets outfan Vout；
The source class of transistor seconds (#2) and the 4th transistor (#4) meets supply voltage Vbias；
FAAnd FBIt is respectively acting on the first logical device and the second logical device.
12. 1 kinds of friction electronics logic nor gates, it is characterised in that including: the first logical device With the second logical device, this first logical device and the second logical device are rubbing described in claim 5 Wipe electronics logical device, transistor A in this first logical device and transistor B and be respectively the One transistor (#1) and transistor seconds (#2), the transistor A in this second logical device and crystalline substance Body pipe B is respectively third transistor (#3) and the 4th transistor (#4), wherein:
The drain electrode of the first transistor (#1) and third transistor (#3) is connected to the ground；
The first transistor (#1) and the source class of third transistor (#3) and the 4th transistor (#4) Drain electrode is connected, and meets outfan Vout；
The drain of transistor seconds (#2) is connected with the source class of the 4th transistor (#4)；
The source class of transistor seconds (#2) meets supply voltage Vbias；
FAAnd FBIt is respectively acting on two friction electronics logical devices.
13. 1 kinds of friction electronics logic XOR gates, it is characterised in that including: the first logical device, Second logical device and the 3rd logical device, the transistor A in this first logical device and transistor B It is respectively the first transistor (#1) and transistor seconds (#2), the crystal in this second logical device Pipe A and transistor B is respectively third transistor (#3) and the 4th transistor (#4), and the 3rd patrols Collect the transistor A in device and transistor B and be respectively the 5th transistor (#5) and the 6th transistor (#6), wherein:
The source class of transistor seconds (#2) and the drain electrode of third transistor (#3) are connected to supply voltage Vbias；
The drain electrode of the first transistor (#1) and the source class ground connection of the 4th transistor (#4)；
The source electrode of the first transistor (#1), the drain electrode of transistor seconds (#2) and the 5th transistor (#5) Drain electrode be connected；
The source electrode of third transistor (#3), the drain electrode of the 4th transistor (#4) and the 6th transistor (#6) Source class be connected；
The source class of the 5th transistor (#5) and the drain electrode of the 6th transistor (#6) are connected, and connect outfan Vout；
FASimultaneously act on the first logical device and the second logical device, FBAct on the 3rd logical device.
14. 1 kinds friction electronics logic with or door, it is characterised in that including: the first logical device, Second logical device and the 3rd logical device, the transistor A in this first logical device and transistor B It is respectively the first transistor (#1) and transistor seconds (#2), the crystal in this second logical device Pipe A and transistor B is respectively third transistor (#3) and the 4th transistor (#4), and the 3rd patrols Collect the transistor A in device and transistor B and be respectively the 5th transistor (#5) and the 6th transistor (#6), wherein:
The source class of transistor seconds (#2) and the drain electrode of third transistor (#3) are connected to the ground；
The drain electrode of the first transistor (#1) and the source class of the 4th transistor (#4) meet supply voltage Vbias；
The source electrode of the first transistor (#1), the drain electrode of transistor seconds (#2) and the 5th transistor (#5) Drain electrode be connected；
The source electrode of third transistor (#3), the drain electrode of the 4th transistor (#4) and the 6th transistor (#6) Source class be connected；
The source class of the 5th transistor (#5) and the drain electrode of the 6th transistor (#6) are connected, and connect outfan Vout；
FASimultaneously act on the first logical device and the second logical device, FBAct on the 3rd logical device.
15. 1 kinds of logic circuits, it is characterised in that include at least one logical device, this logic device Part is the friction electronics logical device according to any one of claim 5 to 7, claim 8 institute Rub the friction electronics logical AND gate described in electronics logic inverter, claim 9, the right stated Require the friction electronics logic described in electronics logic sum gate, claim 11 of the friction described in 10 Described in friction electronics logic nor gate, claim 13 described in NAND gate, claim 12 Friction electronics logic XOR gate, or the friction electronics logic described in claim 14 is same or door.
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CN106531811A (en) * 2016-11-15 2017-03-22 北京纳米能源与***研究所 Tribotronics transistor, NAND gate, trigger, register and counter
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CN113921048A (en) * 2021-10-19 2022-01-11 吉林大学 Integrated circuit capable of carrying out quaternary logic operation based on two-bit transistor memory
CN114005876A (en) * 2021-10-19 2022-02-01 北京纳米能源与***研究所 Bipolar transistor and logic device
CN114005876B (en) * 2021-10-19 2024-04-26 北京纳米能源与***研究所 Bipolar transistor and logic device

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