CN106521457A - Heating device for high-temperature thin film deposition - Google Patents
Heating device for high-temperature thin film deposition Download PDFInfo
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- CN106521457A CN106521457A CN201610881886.4A CN201610881886A CN106521457A CN 106521457 A CN106521457 A CN 106521457A CN 201610881886 A CN201610881886 A CN 201610881886A CN 106521457 A CN106521457 A CN 106521457A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Abstract
The invention belongs to the technical field of thin film preparation, and particularly relates to a heating device for high-temperature thin film deposition. The heating device comprises two electrode assemblies, wherein current I is led onto a metal substrate base band from two edges of the metal substrate base band through electrodes and flows on the metal substrate base band; the metal substrate base band (Hastelloy with high electrical resistivity and the like) is heated up under the action of self resistance to reach the temperature required for YBCO growth; and a deposition area is positioned between the two electrode assemblies. The heating device is simple in principle and structure, quick in heating and high in energy efficiency, can be used for heating a banded metal substrate or a banded metal substrate on which a (conductive or insulating) buffer layer is prepared, and can realize continuous winding preparation of single-faced or double-faced YBCO long strips through eliminating discharge caused by poor contact between the electrodes and the base band.
Description
Technical field
The invention belongs to the high temperature in technical field of film preparation, more particularly to static or mobile long ribbon shape metal substrate
Environment film preparation, can be used to sputtering, evaporates, the thin film preparation process such as PLD, MOCVD, specially a kind of to sink for high temperature film
Long-pending heater.
Background technology
In field of film preparation, in order to the control for realizing film grows, and then control thin film physicses chemical property is reached
Purpose, it usually needs the silicon for giving film growth accompanying.
Many producers and research institution all are concentrating one's energy to design more superior reative cell, are the design of complex reaction room,
Heater must also be made and be correspondingly improved.As in cavity, gas reaction has strict demand for temperature, so must develop
With temperature it is uniform, intensification cooling rate is fast, it is stable fast, repeatable good the features such as high performance thin film deposition hot system.Tool
For body, thin film deposition heating system is necessary：With temperature is brought up to the high temperature needed for each layer film of growth quickly；Reach and set
After constant temperature degree, this temperature can be stably maintained at and do not changed, both possess heat endurance；Temperature is realized at short notice can
The rapid raising and lowering of degree, so that form precipitous layer on chip；Heater can be controlled and realize different design temperatures, be met
The needs of growth plane SH wave film；With good repeatability, make the material for growing out every time that there is identical property.Mesh
The equipment mode of heating for preparing film on front market mainly has two kinds：Resistant heating and high-frequency induction heating.
Resistant heating is, by using the higher resistance wire of resistance ratio, to pass to high current, produces resistance wire substantial amounts of
Joule heat, resistance wire are warming up to 1500～2000 DEG C at short notice.Then the resistance wire of high temperature conducts heat to graphite base, heat transfer
Form mainly based on radiation, therefore also have the hot mode be referred to as radiant heating.Using main excellent of Resistant heating
Point has simple structure, and heating principle is simple, and temperature control is convenient etc.；And used as traditional mode of heating, its technology is very
Ripe.Shortcoming mainly has high cost, safeguards relative difficulty, and warming and cooling rate is relatively slow.And this mode of heating will
The quantity to heater, spatial distribution etc. is asked to be designed well, to ensure that substrate obtains sufficiently high and equally distributed temperature
Spend, therefore the design of heater is more difficult to, required space is also bigger.
Sensing heating Main Basiss electromagnetic induction, three general principles of Kelvin effect and heat transfer, will conductor be placed in height
In the electromagnetic field of frequency, make in conductor, to induce the electric current of same frequency, generate heat in the presence of the electric current.Sensing heating is in work
Industry has been used more than 40 years, and its application is very extensive.High-frequency induction heating is compared with traditional firing equipment with many
Advantage：Heating-up temperature is high, and is non-contact thermal, and this is very superior for baroque cavity；Heating effect
Rate is high, energy-conservation；Firing rate is fast, and the surface oxidation of heating object is few；Easily realize automatically controlling；Operating environment is good；Clean nothing
Pollution.And its deficiency is if that in this way substrate is directly heated, substrate must be it is conductive, and shape rule
Then, resistivity is evenly distributed, have Kelvin effect (when having alternating current or alternating electromagnetic field in conductor, the electric current of conductor
Skewness, current convergence is in " skin " part of conductor, that is to say, that thin layer of the current convergence in conductor appearance, the closer to
Conductive surface, current density are bigger, and inside wire, actually electric current is less.As a result increase the resistance of conductor, make its loss
Power also increases.), and high frequency magnetic field can produce impact to the equipment of surrounding.
Above two mode of heating respectively has pluses and minuses, and they have in common that the energy needed for substrate intensification is by outer
Shift or convert in portion.But during transfer or conversion, the real energy being used for needed for substrate heats up is little, big portion
The energy for dividing all is slatterned in itself by heater or power supply.When film is prepared in the metal substrate of long ribbon shape, radiation adds
Although heat can be used for the heating of such strip metal substrate, design well must be carried out to heating source and just can guarantee that temperature
It is uniformly distributed along metal substrate length and width direction, and such heating source is often more complicated.Using high-frequency induction
When carrying out heating metal sheet band, then require that the very high skin depth that just can guarantee that alternating electric field of electric field frequency is limited in material internal
To improve efficiency.In high frequency, the coupling for being easy to produce in vacuum cavity high-frequency electric field has excited plasma.Sensing heating
Occur with while plasma, for the accurate control of temperature is unfavorable.
When heating to strip metal substrate, compared with the conventional mode of heating of above two, by metal substrate
Interior introducing electric current, the mode generated heat using the resistance of metal itself then seems more simple and efficiency is higher.At present, existing phase
Patent (CN104046963A) is closed using similar mode to heat metal substrate.But heat electrode pair to move in this patent
When dynamic metal substrate base band is heated, Jing often causes electric discharge between electrode slice and base band due to loose contact.This
Caused by planting electric discharge, base band can be melted in localized hyperthermia, affect the surface topography and electric conductivity of YBCO bands.
Therefore, when to strip metal silicon, in view of having the deficiency of mode of heating, patent of the present invention proposes one
Plant following new mode of heating and device.
The content of the invention
For above-mentioned existing problems or deficiency, for solving to provide a kind of height to static or mobile strip metal base band substrate
Effect, uniform and reliable heating means, the invention provides a kind of heater for high temperature film deposition.
The heater for being used for high temperature film deposition includes first electrode group and second electrode group.
First electrode group is identical with second electrode group, and is juxtaposed on film-growth zone both sides；Two electrode groups are located at
Between two substrate winder rotating shafts.
The electrode group is by ceramic wafer, conductive metal sheet, silver-colored tungsten Ag-W rods, resilient supporting unit and resistance metal piece group
Into；Ceramic wafer has two panels, for installing conductive metal sheet, and can be on support slidably；Conductive metal sheet has 12-40,
The inner surface of two panels ceramic wafer is fixed on equidistantly and in couples, its upper end is welded with Ag-W rods, between two relative Ag-W rods is
The passage of metal substrate base band, each paired Ag-W rods are electrically connected to each other, and electrically connect with power interface formation；Each pair resistance
Sheet metal constitutes an electrode unit, and each electrode unit is formed by current dividing circuit and electrically connected；Current dividing circuit is string
The resistance of connection, each electrode unit are connected to the tie point between correspondence adjacent resistor；Two panels ceramic wafer is by resilient support
Device causes metal substrate base band to be held between the Ag-W rods of each electrode unit.
When the passage refers to that the position of metal substrate base band under working condition is i.e. static or metal substrate base band winding
Running path between disk；Passage is located between paired conductive metal sheet, and its both sides of the edge is contacted with Ag-W rods.
The power interface refers to the circuit interface being connected with external power source.
Further, the resilient supporting unit is the screw rod and supporting nut and spring through two panels ceramic wafer,
Conductive metal sheet is fixed on ceramic wafer by spring shim.
Further, the concrete ratio of the current dividing circuit distribution is determined by the value of selected resistance.
Further, the conductive metal sheet is connected on the screw with distribution Ohmic contact by copper cash, to realize
Even CURRENT DISTRIBUTION.
Further, the Ag-W rods are cylindrical rod.
Further, the two ends of the electrode group are also provided with positioning slit, to ensure metal substrate base band moving process
In it is vertical with the holding of Ag-W rods all the time.
Why Ag-W alloy bars are adopted, be because in experimentation to the big (20A of electric current of metal substrate base band heating
More than), metal substrate base band temperature and gas pressure in vacuum (300～600Pa) it is higher, this requires electrode and metal substrate base band
Between there is well electrical contact, otherwise will result in and discharge and burn base band and electrode between base band and electrode, and Ag-W alloys
, with high connductivity and dystectic characteristic, oxidation resistance is strong, and with the effect of electric arc is suppressed, is especially suitable for this ring for rod
Border.
The present invention workflow be：Electric current I imports to metal liner by electrode from two edges of metal substrate base band
On base band, and flow over；Metal substrate base band (Hastelloy with higher electric resistivity etc.) is in the work of self-resistance
The temperature needed for YBCO growths is reached with lower heating, and crystallizing field is between two electrode groups.
Due to being relative slip between metal substrate base band and electrode, so metal substrate base band electrified regulation mode
It is critical only that how to ensure that base band and electrode still have good electrical contact in the state of relative slip, can otherwise cause electrode
There is electric discharge between Ag-W pieces and metal substrate base band.Caused by this electric discharge, base band can be melted in localized hyperthermia.In addition, in winding
Under the winding tension effect of disk, this fusing even can make base band snap, so as to cause deposition failure.As ceramic wafer can propped up
On frame slidably, thus the big I of contact force be adjusted by the spring on support, and conductive metal sheet passes through spring
Pad is fixed on ceramic wafer, and Ag-W rods are cylindrical rod, and such base band can keep good electrical contact with Ag-W rods all the time.In addition
It is also provided with positioning slit at the two ends of two electrode groups, it is vertical with the holding of Ag-W rods all the time in base band moving process to ensure.
The mode of heating has obvious advantage：
1. metal substrate base band self-heating, the thermograde outside base band are very big, leave the temperature drop on base band surface
Quickly.This allows for substantially being reduced by the temperature of the spray head of base band heating baking.So as to effectively suppress metal organic source going out
Decomposition reaction at mouthful, had both improve metal organic source utilization rate, eliminates reaction product again and deposits in spray head exit
Phenomenon, therefore more preferably beneficial to YBCO bands long-time stable prepare；2. as space temperature field gradient is very big, spray head can
With close away from base band but its own temperature will not be too high, thus ybco film sedimentation rate and metal organic source utilization rate more
It is high；3. the mode of heating is mainly by heat transfer making surface heat up, thus heat faster, it is in hgher efficiency therefore more energy efficient；
4. in heating process, electric current only flows through the metal base band part between two electrodes, and crystallizing field is located between two electrodes,
So it is easy to by the mode such as distance between increase electrode extend deposition region；5. as the space between two electrodes is
Open, thus spray head can be all set on two surfaces of metal base band, realize the preparation of two-sided YBCO bands.As long as Metal Substrate
Buffer layer thickness with two surface depositions, structure are consistent, then the growth temperature of two sides ybco film；Degree can just be consistent, from
And prepare the two-sided YBCO bands of two sides uniformity.
The present invention can promptly make metal substrate be heated to more than 800 DEG C, and uniformity of temperature profile thereon, this uniform point
The interval of cloth easily can also be adjusted as needed, and energy utilization rate is high.Match somebody with somebody dividing for metal substrate of closing again
After Duan Jiare and winding, can more realize prepared by the continuous winding of plural layers.These are particularly weighed for the preparation of industrialization of film
Will, the quality of prepared film can be improved, while reducing the preparation cost of film.In addition, also can be very using the heating means
The preparation of uniformity two-side film membrane is realized on metal substrate two sides simultaneously easily, for the service efficiency for improving metal substrate,
Reduces cost, improves performance and has important function.
In sum, the present invention has simple, the high advantage of energy utilization rate；Can be used for the metal substrate or thereon of banding
Preparation has the heating of the strip metal substrate of (conductive or insulation) cushion, can also realize the heat stepwise of metal substrate, and
And metal substrate can be static or mobile；Realize prepared by the continuous winding of plural layers, on metal substrate two sides while reality
The preparation of existing uniformity two-side film membrane, for the service efficiency for improving metal substrate, reduces cost, improves performance and has important work
With.
Description of the drawings
Fig. 1 is the stereochemical structure and circuit connection diagram of the present invention；
Fig. 2 is the dimensional structure diagram of embodiment electrode group；
Fig. 3 corresponds to the schematic top plan view of Fig. 2 electrode groups；
Fig. 4 corresponds to the right side of Fig. 2 electrode groups and regards schematic diagram；
Fig. 5 is the Equivalent Calculation circuit diagram for heating electrode；
Fig. 6 is the YBa of three diverse locations on strip metal substrate2Cu3O7-x(YBCO) the X-ray diffraction 2theta of film
Scanning figure；
Fig. 7 is the X-ray diffraction ω scanner uni φ scanning curves of the ybco film in centre position on strip metal substrate；
Reference：1. Ceramic insulator, 2. conductive metal sheet, 3.Ag-W rods, 4. wire, 5. metal substrate base band, 6.
Current sharing resistors, 7. metal screw, 8. metal nut, 9. metallic screw, 10. spring, 11. locating grooves.
Specific embodiment
The present invention is described further with reference to the accompanying drawings and examples.
Device shown in Fig. 1 is used for into second generation conductor of high-temperature superconductor coat YBa2Cu3O7-x(YBCO) preparation of film.Cut
Take one section wide 1cm length and be longer than vitellarium, the Hastelloy base band (LaMnO of deposited good buffer layer thin film3/homo-epi
MgO/IBAD-MgO/SDP-Y2O3/ Hastelloy), two sides of this section of metal substrate are polished to remove on side
Then the oxide of deposition which is welded to stainless steel leash from beginning to end by the way of welding to realize good electrical contact
On, finally metal substrate base band is fixed according to above-mentioned embodiment, stainless steel leash is connected on winder, and is connected
Good circuit.The growth room of MOCVD systems is evacuated to into below 1Pa.Weigh the Y that metal organic source is respectively 128.4mg
(TMHD)3, 143mg Gd (TMHD)3, 696mg Ba (TMHD)2, 356.885mg Cu (TMHD)2With the Zr of 16.9175mg
(TMHD)4(thmd：2,2,6,6- tetramethyl -3,5- heptadione), it is dissolved in 5ml tetrahydrofuran solvents together, and sonic oscillation
Which is fully dissolved, form the metal organic source solution of uniform clarification.Turn on the power, the electricity of 26A is passed to metal substrate base band
Stream (voltage is about 30V).Traction electric machine is opened, metal substrate is drawn to vitellarium.After temperature stabilization, will using peristaltic pump
Flash distillation in the vaporization chamber of 300 DEG C of metal organic source solution feeding becomes metal organic source steam.The organic source steam is in Ar gas
Drive lower and O2And N2O gas mixings, are ejected into the metal liner through vitellarium by spray head after 320 DEG C of gas pipeline
On bottom, reaction generates ybco film.
The present embodiment is heated using electrode group shown in Fig. 2, its schematic top plan view and it is right regard schematic diagram respectively such as Fig. 3 and
Shown in Fig. 4.
The Equivalent Calculation circuit diagram of heating electrode is as shown in Figure 5.In Fig. 5, distribute size and metal base band, the Ag-W of resistance
Distribution spacing of the rod on ceramic wafer is relevant with the group number of Ag-W rods.The group number of hypothesis Ag-W rods is 8, i.e., on two pieces ceramic wafers altogether
Have 16 Ag-W alloy bars, and assume that the resistance of Ag-W is negligible relative to base band resistance, then electrode and base band etc.
Effect circuit is as shown in Figure 5.In Fig. 5, R represents the equivalent resistance of the base band between two adjacent groups Ag-W rod, is expressed as formula R=ρ × l/
(w × d), in formula, ρ represents that the resistivity of metal base band, w and d represent the width and thickness of base band respectively, and l represents two adjacent groups
The centre-to-centre spacing of Ag-W rods.
Rn (n=1,2, current sharing resistors 7) is represented, Ag-W rods are then equivalent in circuit the company between R and Rn
Line.In order that the electric current carried on every group of Ag-W piece is equal, it is assumed that the electric current is I, then the total current of current source output is 8I.Root
According to Kirchhoff's law, distribute resistance Rn and be represented by formula Rn=R × n/ (8-n), distribution resistance uses identical in material object
Metal base band and formed according to formula Rn=R × n/ (8-n) result of calculation cutting.
Again the YBCO samples for preparing are put into and are connected with an atmospheric pressure O2Tube furnace in, under 500 degrees Celsius be incubated
After 30 minutes, finally take out film sample and characterized.
The structure of prepared film is as shown in Figure 6 and Figure 7.
Show in Fig. 6, the diffraction maximum in (00l) face of three diverse locations is all very sharp, and diffraction peak intensity is also similar, and
All no miscellaneous peak, the YBCO crystal grain of three positions in surface are pure c-axis growth, also illustrate that YBCO is thin on the strip metal substrate
Membrane crystallization quality is very uniform.
In Fig. 7, the value of a half width of two curves is respectively 1.38 ° and 2.78 °, shows outside the ybco film face on the position
It is fine with being orientated in face, with the biaxial texture similar with ybco film on monocrystalline.
As can be seen here, using crystalline quality and the favorable orientation of the ybco film prepared by heater of the invention.
In sum, this base band electrified regulation mode effectively overcomes the deficiency of original heating system, its principle, structure
Simply, heat rapid, efficiency is high, by eliminating because discharging caused by loose contact between electrode and base band, the mode of heating can be with
Realize prepared by the continuous winding of the long bands of single or double YBCO.
Claims (7)
1. it is a kind of for high temperature film deposition heater, including first electrode group and second electrode group, it is characterised in that：
First electrode group is identical with second electrode group, and is juxtaposed on film-growth zone both sides；Two electrode groups are located at two
Between substrate winder rotating shaft；
The electrode group is made up of ceramic wafer, conductive metal sheet, silver-colored tungsten Ag-W rods, resilient supporting unit and resistance metal piece；Pottery
Porcelain plate has two panels, for installing conductive metal sheet, and can be on support slidably；Conductive metal sheet has 12-40, equidistantly
And the inner surface of two panels ceramic wafer is fixed in couples, its upper end is welded with Ag-W rods, is metal liner between two relative Ag-W rods
The passage of base band, each paired Ag-W rods are electrically connected to each other, and electrically connect with power interface formation；Each pair resistance metal piece
An electrode unit is constituted, each electrode unit is formed by current dividing circuit and electrically connected；Current dividing circuit is the electricity of series connection
Resistance, each electrode unit are connected to the tie point between correspondence adjacent resistor；Two panels ceramic wafer is made by resilient supporting unit
Obtain metal substrate base band to be held between the Ag-W rods of each electrode unit；
When the passage refers to that the position of metal substrate base band under working condition is i.e. static or metal substrate base band winder it
Between running path；Passage is located between paired conductive metal sheet, and its both sides of the edge is contacted with Ag-W rods；
The power interface refers to the circuit interface being connected with external power source.
2. the heater of high temperature film deposition is used for as claimed in claim 1, it is characterised in that：The resilient supporting unit is
Through the screw rod and supporting nut and spring of two panels ceramic wafer, conductive metal sheet is fixed on ceramic wafer by spring shim
On.
3. the heater of high temperature film deposition is used for as claimed in claim 1, it is characterised in that：The current dividing circuit point
The concrete ratio matched somebody with somebody is determined by the value of selected resistance.
4. the heater of high temperature film deposition is used for as claimed in claim 1, it is characterised in that：The conductive metal sheet passes through
Copper cash is connected on the screw with distribution Ohmic contact, to realize uniform CURRENT DISTRIBUTION.
5. the heater of high temperature film deposition is used for as claimed in claim 1, it is characterised in that：The Ag-W rods are cylinder
Rod.
6. the heater of high temperature film deposition is used for as claimed in claim 1, it is characterised in that：The two ends of the electrode group are also
Positioning slit is provided with, it is vertical with the holding of Ag-W rods all the time in metal substrate base band moving process to ensure.
7. the heater of high temperature film deposition is used for as claimed in claim 1, and its workflow is specific as follows：
Electric current I is imported in metal substrate base band from two edges of metal substrate base band by electrode, and is flowed over；Gold
Category substrate base band is generated heat in the presence of self-resistance and reaches the required temperature of YBCO growths, and crystallizing field is in two electrode groups
Between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610881886.4A CN106521457A (en) | 2016-10-10 | 2016-10-10 | Heating device for high-temperature thin film deposition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610881886.4A CN106521457A (en) | 2016-10-10 | 2016-10-10 | Heating device for high-temperature thin film deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106521457A true CN106521457A (en) | 2017-03-22 |
Family
ID=58333113
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610881886.4A Pending CN106521457A (en) | 2016-10-10 | 2016-10-10 | Heating device for high-temperature thin film deposition |
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| CN (1) | CN106521457A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108977791A (en) * | 2018-07-24 | 2018-12-11 | 电子科技大学 | A kind of electric heating device for winding deposition film under high temperature |
| CN109097756A (en) * | 2018-08-29 | 2018-12-28 | 电子科技大学 | A kind of heating device that the high temperature film for thin metal deposits |
| CN110565310A (en) * | 2019-08-30 | 2019-12-13 | 安徽省通信产业服务有限公司 | Anti-aging method for insulating adhesive tape |
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| GB216473A (en) * | 1923-02-21 | 1924-05-21 | Elyria Iron And Steel Company | Improvements in tube-supporting and compressing devices for apparatus for welding tubing and the like |
| WO2007026545A1 (en) * | 2005-08-31 | 2007-03-08 | Konica Minolta Holdings, Inc. | Plasma discharge processing device and production method of gas barrier film |
| CN104046963A (en) * | 2014-06-08 | 2014-09-17 | 电子科技大学 | Thin film sedimentation preparation device and method |
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| GB216473A (en) * | 1923-02-21 | 1924-05-21 | Elyria Iron And Steel Company | Improvements in tube-supporting and compressing devices for apparatus for welding tubing and the like |
| WO2007026545A1 (en) * | 2005-08-31 | 2007-03-08 | Konica Minolta Holdings, Inc. | Plasma discharge processing device and production method of gas barrier film |
| CN104046963A (en) * | 2014-06-08 | 2014-09-17 | 电子科技大学 | Thin film sedimentation preparation device and method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108977791A (en) * | 2018-07-24 | 2018-12-11 | 电子科技大学 | A kind of electric heating device for winding deposition film under high temperature |
| CN109097756A (en) * | 2018-08-29 | 2018-12-28 | 电子科技大学 | A kind of heating device that the high temperature film for thin metal deposits |
| CN110565310A (en) * | 2019-08-30 | 2019-12-13 | 安徽省通信产业服务有限公司 | Anti-aging method for insulating adhesive tape |
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