CN106502042A - The domain modification method of mask plate, mask plate and its manufacture method - Google Patents
The domain modification method of mask plate, mask plate and its manufacture method Download PDFInfo
- Publication number
- CN106502042A CN106502042A CN201510567725.3A CN201510567725A CN106502042A CN 106502042 A CN106502042 A CN 106502042A CN 201510567725 A CN201510567725 A CN 201510567725A CN 106502042 A CN106502042 A CN 106502042A
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- mask plate
- domain
- pattern density
- unit
- modification method
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- 238000002715 modification method Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000012360 testing method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 4
- 238000012797 qualification Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Present invention is disclosed a kind of domain modification method of mask plate, mask plate and its manufacture method., including providing front end domain, in the front end domain, there is the first module of non-zero pattern density in the domain modification method of the mask plate that the present invention is provided；The front end domain is checked, if there is the second unit that pattern density is zero in the front end domain, SRAF figures, the resolution ratio of the lithographic equipment that the SRAF figures are less than is added to the second unit.Compared with prior art, after adding SRAF figures, the pattern density for enabling to unit becomes close to.The mask plate for so thus further obtaining, enabling to the overall pattern density of light shield becomes uniform, improves the qualification rate of light shield, substantially avoid and scrap.
Description
Technical field
The present invention relates to technical field of semiconductors, the domain modification method of more particularly to a kind of mask plate, cover
Film version and its manufacture method.
Background technology
MPW (Multi-Project Wafer, MPW) is exactly by multiple integrated electricity with same process
Road design is placed on flow on same wafer, shares flow expense by area, to reduce development cost and new product
Development risk, reduces threshold of the medium and small IC design enterprise in starting, reduces single experiment flow and make
Into resource serious waste.
The light shield of one MPW is generally shared by multiple clients, and the product of these clients is had in the fabrication process
Different degrees of difference.As some ion injecting process, some clients need light shield, some clients do not go out
Light shield, or even the light shield for minority technique occur only has the situation that client needs.In this case other
The product pattern of client is accomplished by being covered with chromium (Cr), in order to avoid ion is injected in ion implantation technology.
But, the pattern density (Pattern Density) of light shield so can be caused simultaneously to be distributed seriously unbalanced.Such as
Shown in Fig. 1, mask plate 10 includes multiple units, and wherein unit 11 does not possess figure (namely figure pair
The product that answers does not need light shield in this technique), unit 12 then possesses figure, therefore, the figure of unit 11
Shape density is 0, and the pattern density of unit 12 is not zero, for example, 30% etc..
In the manufacture craft of light shield, the exposure of light shield and etching be required for consider pattern density impact, work
Process engineer can set up pattern density and exposure dose, and pattern density and etching ginseng by simulation or experiment
Several functional relations controlling all multi-parameters of light shield, such as critical dimension uniformity (CD Uniformity),
Annotation poor (registration) etc..But for seriously uneven, the situation as shown in Figure 1 of distribution,
Usually not good method because light shield for product Rotating fields only go out a piece of, it is impossible to as wafer
Adjusting etching parameter, therefore the scrappage of this kind of light shield can be very high for repetition test.
Then, improve this situation, have become a direction of assaulting fortified position in the industry.
Content of the invention
It is an object of the invention to provide a kind of domain modification method of mask plate, mask plate and its manufacture method,
So that the overall pattern density of light shield becomes uniform.
For solving above-mentioned technical problem, the present invention provides a kind of domain modification method of mask plate, including：
Front end domain is provided, in the front end domain, there is the first module of non-zero pattern density；
The front end domain is checked, if there is the second list that pattern density is zero in the front end domain
Unit, then to the second unit add SRAF figures, the lithographic equipment that the SRAF figures are less than point
Resolution.
Optionally, for the domain modification method of described mask plate, the pattern density of the first module with
One test pattern density difference at most 10%, after adding the SRAF figures, the figure of the second unit
Density is at least the 90% of the test pattern density.
Optionally, for the domain modification method of described mask plate, the SRAF figures include multiple phases
The rectangle at interval.
Optionally, for the domain modification method of described mask plate, the plurality of rectangle is parallel to each other and hands over
Wrong arrangement is in multiple row.
Optionally, for the domain modification method of described mask plate, the width of each rectangle is
60nm-120nm.
Optionally, for the domain modification method of described mask plate, the width of each rectangle is
60nm-160nm.
Optionally, for the domain modification method of described mask plate, the length of each rectangle is width
5-7 times.
Optionally, for the domain modification method of described mask plate, in each column, adjacent rectangle spacing is
200nm-1000nm.
Optionally, for the domain modification method of described mask plate, between the rectangle between adjacent column
Away from for 100-1000nm.
The present invention also provides a kind of manufacture method of mask plate, including：Repaiied using the domain of described mask plate
Correction method, after SRAF figures are added to the unit, the front end domain is transferred on substrate.
The present invention also provides a kind of mask plate, and the mask plate includes first module and second unit, and described the
Unit one has actual graphical, and the second unit has SRAF figures.
Optionally, for described mask plate, the pattern density at least test pattern of the second unit is close
The 90% of degree.
The domain modification method of the mask plate that the present invention is provided, including providing front end domain, the front end domain
The middle first module that there is non-zero pattern density；The front end domain is checked, if the front end domain
Middle have the second unit that pattern density is zero, then add SRAF figures, the SRAF to the second unit
The resolution ratio of the lithographic equipment that figure is less than.Compared with prior art, after adding SRAF figures, can make
The pattern density for obtaining unit becomes close to.The mask plate for so thus further obtaining, enables to light
The overall pattern density of cover becomes uniform, improves the qualification rate of light shield, substantially avoid and scrap.
Description of the drawings
Fig. 1 is the schematic diagram of the domain and front end domain in the present invention of mask plate in prior art；
Fig. 2 is the flow chart of the domain modification method of the mask plate in the present invention；
Fig. 3 is the revised schematic diagram of domain in one embodiment of the invention；
Fig. 4 is the structural representation of the SRAF figures in one embodiment of the invention.
Specific embodiment
Below in conjunction with schematic diagram to the domain modification method of mask plate of the present invention, mask plate and its manufacturer
Method is described in more detail, and which show the preferred embodiments of the present invention, it should be appreciated that art technology
Personnel can change invention described herein, and still realize the advantageous effects of the present invention.Therefore, following
Description is appreciated that widely known for those skilled in the art, and is not intended as the limit to the present invention
System.
Referring to the drawings the present invention more particularly described below by way of example in the following passage.According to following explanation and
Claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and using non-accurately ratio, only in order to convenient, lucidly aid in illustrating the embodiment of the present invention
Purpose.
The core concept of the present invention is to provide a kind of domain modification method of mask plate, including：
Step S101：Front end domain is provided, in the front end domain, there is the first module of non-zero pattern density；
Step S102：The front end domain is checked, if there is pattern density in the front end domain being
Zero second unit, then add SRAF figures, the light that the SRAF figures are less than to the second unit
Quarter equipment resolution ratio.
Below, Fig. 1-Fig. 4 refer to, domain modification method and the manufacture of mask plate to the mask plate of the present invention
Method is described in detail.Wherein Fig. 1 is the schematic diagram of front end domain in the present invention；During Fig. 2 is for the present invention
Mask plate domain modification method flow chart；Fig. 3 is that domain is revised in one embodiment of the invention to be shown
It is intended to；Fig. 4 is the structural representation of the SRAF figures in one embodiment of the invention.
The domain modification method of the mask plate that the present invention is provided, including：
First, execution step S101：Front end domain is provided；As shown in figure 1, showing schematically in Fig. 1
The structure of front end domain 10, the front end domain 10 include that first module 11, the first module 11 have
Standby figure, therefore have certain pattern density.
Illustrate only a first module 11 in FIG, certainly, in the middle of actual production, may also appear in
Have multiple first modules 11 in front end domain 10, that is, possess figure unit have a case that multiple, then
The pattern density of these first modules 11 is close, the pattern density of the first module 11 in design
With a test pattern density difference at most 10%.For example, if only existing a first module 11, this first
The pattern density of unit 11 is test pattern density, if there are multiple first modules 11, according to each the
The pattern density of one unit 11, obtains after comprehensive analysis, for example, can adopt the figure of each unit 12
The mean value of shape density.
Then, execution step S102, checks to the front end domain, if existing in the front end domain
Pattern density is zero second unit 12, then add SRAF figure (Sub-Resolution to the unit
Assistant Feature, Sub-resolution assist features), the resolution of the lithographic equipment that the SRAF figures are less than
Rate.As shown in figure 1, the second unit 12 does not possess figure, therefore its pattern density is 0.Such as Fig. 3
Shown, interpolation of the front end domain 10 through SRAF figures, second unit 12' are provided with pattern density.
Preferably, after the interpolation of SRAF figures, the pattern density of second unit 12' is at least described
The 90% of test pattern density.Certainly, the pattern density of second unit 12' can not be excessive, and SRAF
The interpolation of figure can control to be not more than test pattern density in the pattern density for causing second unit 12', and
The pattern density of second unit 12' can not only increase the complexity of SRAF figures when more than test pattern density
Degree, also there is no need the pattern density that is above standard.
Fig. 4 is refer to, the structure of SRAF figures in Fig. 4, is schematically illustrated, it is seen then that the SRAF
Figure 20 includes multiple rectangles 21 separately.These rectangles 21 are arranged in multiple row, dotted line frame in such as Fig. 4
22 show row, are parallel to each other between each column, and each column also includes multiple rectangles 21.The rectangle 21
Width W be limited to wavelength when exposing, specifically, such as the light shield of argon fluoride (ArF), width
W is 60nm-120nm；And the light shield for KrF (KrF), the width W of rectangle 21 is
60nm-160nm.The width W of above range so that the resolution of the lithographic equipment that the SRAF figures are less than
Rate such that it is able to guarantee to be imaged on wafer.Length L of the rectangle 21 is generally width W's
5-7 times, too short easily inspection to light shield brings puzzlement, oversize easy increase manufacture difficulty.
Please continue to refer to Fig. 4, it is seen that in each column, between rectangle 21, there is interval, this spacing d1 is preferred
For 200nm-1000nm, spacing d2 between adjacent column is preferably 100nm-1000nm.Thus it is possible to logical
Spacing d2 between spacing d1 and adjacent column in each column between rectangle 21 is overregulated, is obtained after controlling
Light shield penetrance, to realize causing the pattern density of second unit 12' to be near the mark pattern density.
Certainly, the SRAF figures 20 are not limited to be made up of rectangle 21, for example can also be circular,
The figure constitutions such as triangle, pentagon, according to different figure selectings, the arrangement mode of figure and size etc.
There can also be difference.
Next, according to the domain modification method of above-mentioned mask plate, a kind of manufacture of mask plate can also be obtained
Method, including：After SRAF figures are added to the second unit 11, domain is transferred on substrate.
Domain is transferred to substrate this process and can be completed using prior art, and the present invention is not repeated to this.Thus,
A kind of mask plate can be obtained, the mask plate includes that first module and second unit, the first module have
Actual graphical, the second unit have SRAF figures.The figure of the first module and second unit is close
Degree is close, and the pattern density of the second unit is at least the 90% of the pattern density of first module.
The manufacture method of the mask plate of the present invention, from for wave band, can be useful in such as ArF light shields, KrF
Light shield and I-line light shields, from for type, can be useful in such as Binary light shields (binary system light shield) and
PSM light shields (skew shift cover), and OMOG light shields (light shield containing molybdenum).Also, the side of the present invention
Method is not limited to MPW light shields, and other need the occasion for balancing light mask image density adopt.
So far, the domain modification method of mask plate of the invention, mask plate and its manufacture method, by adding
After SRAF figures, the pattern density for enabling to unit becomes close to.So thus obtained mask plate,
Enabling to the overall pattern density of light shield becomes uniform, improves the qualification rate of light shield, substantially avoid
Scrap.
Obviously, those skilled in the art can carry out various changes and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these modification and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprising these changes and modification.
Claims (12)
1. the domain modification method of a kind of mask plate, including：
Front end domain is provided, in the front end domain, there is the first module of non-zero pattern density；
The front end domain is checked, if there is the second list that pattern density is zero in the front end domain
Unit, then to the second unit add SRAF figures, the lithographic equipment that the SRAF figures are less than point
Resolution.
2. the domain modification method of mask plate as claimed in claim 1, it is characterised in that described first is single
The pattern density and a test pattern density difference at most 10% of unit, after adding the SRAF figures, described
The pattern density of second unit is at least the 90% of the test pattern density.
3. the domain modification method of mask plate as claimed in claim 1, it is characterised in that the SRAF
Figure includes multiple rectangles separately.
4. the domain modification method of mask plate as claimed in claim 4, it is characterised in that the plurality of square
Shape is parallel to each other and is staggered in multiple row.
5. the domain modification method of mask plate as claimed in claim 5, it is characterised in that each described square
The width of shape is 60nm-120nm.
6. the domain modification method of mask plate as claimed in claim 5, it is characterised in that each described square
The width of shape is 60nm-160nm.
7. the domain modification method of mask plate as claimed in claims 6 or 7, it is characterised in that each institute
The length for stating rectangle is 5-7 times of width.
8. the domain modification method of mask plate as claimed in claim 8, it is characterised in that adjacent in each column
The spacing of rectangle is 200nm-1000nm.
9. the domain modification method of mask plate as claimed in claim 8, it is characterised in that between adjacent column
Spacing be 100-1000nm.
10. a kind of manufacture method of mask plate, including：Mask as described in any one in claim 1-9
The domain modification method of version, after SRAF figures are added to the unit, the front end domain is transferred to
On substrate.
A kind of 11. mask plates, the mask plate include first module and second unit, the first module tool
There is actual graphical, the second unit has SRAF figures.
12. mask plates as claimed in claim 11, it is characterised in that the pattern density of the second unit
At least test pattern density 90%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510567725.3A CN106502042A (en) | 2015-09-08 | 2015-09-08 | The domain modification method of mask plate, mask plate and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510567725.3A CN106502042A (en) | 2015-09-08 | 2015-09-08 | The domain modification method of mask plate, mask plate and its manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106502042A true CN106502042A (en) | 2017-03-15 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510567725.3A Pending CN106502042A (en) | 2015-09-08 | 2015-09-08 | The domain modification method of mask plate, mask plate and its manufacture method |
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| CN (1) | CN106502042A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112824972A (en) * | 2019-11-21 | 2021-05-21 | 中芯国际集成电路制造(上海)有限公司 | Target layout and mask layout correction method, mask and semiconductor structure |
| CN113517180A (en) * | 2020-04-10 | 2021-10-19 | 中芯国际集成电路制造(上海)有限公司 | Mask layout and correction method thereof |
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| JP2005049580A (en) * | 2003-07-28 | 2005-02-24 | Seiko Epson Corp | Mask, color filter substrate, method for manufacturing color filter substrate, electrooptical device, method for manufacturing electrooptical device and electronic equipment |
| CN101329505A (en) * | 2007-06-18 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Layout for reducing aberration sensitiveness, light shield manufacture and graphic method |
| CN101893819A (en) * | 2009-05-20 | 2010-11-24 | 上海华虹Nec电子有限公司 | Method for improving graphics critical dimension uniformity in mask |
| CN101943853A (en) * | 2009-07-07 | 2011-01-12 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of mask |
| CN102820260A (en) * | 2012-08-16 | 2012-12-12 | 上海华力微电子有限公司 | Method for improving via hole pattern performance expression |
| CN103105726A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Layout graph correction method |
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2015
- 2015-09-08 CN CN201510567725.3A patent/CN106502042A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005049580A (en) * | 2003-07-28 | 2005-02-24 | Seiko Epson Corp | Mask, color filter substrate, method for manufacturing color filter substrate, electrooptical device, method for manufacturing electrooptical device and electronic equipment |
| CN101329505A (en) * | 2007-06-18 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Layout for reducing aberration sensitiveness, light shield manufacture and graphic method |
| CN101893819A (en) * | 2009-05-20 | 2010-11-24 | 上海华虹Nec电子有限公司 | Method for improving graphics critical dimension uniformity in mask |
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| CN103105726A (en) * | 2011-11-11 | 2013-05-15 | 中芯国际集成电路制造(上海)有限公司 | Layout graph correction method |
| CN102820260A (en) * | 2012-08-16 | 2012-12-12 | 上海华力微电子有限公司 | Method for improving via hole pattern performance expression |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112824972A (en) * | 2019-11-21 | 2021-05-21 | 中芯国际集成电路制造(上海)有限公司 | Target layout and mask layout correction method, mask and semiconductor structure |
| CN113517180A (en) * | 2020-04-10 | 2021-10-19 | 中芯国际集成电路制造(上海)有限公司 | Mask layout and correction method thereof |
| CN113517180B (en) * | 2020-04-10 | 2023-08-18 | 中芯国际集成电路制造(上海)有限公司 | Mask layout correction method and mask layout |
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